High Power Impulse Magnetron Sputtering (HiPIMS)

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High Power Impulse Magnetron Sputtering (HiPIMS)Ionized Physical Vapor Deposition (IPVD)The system design is determined by the average distancea neutral particle travels before being ionizedThe ionization mean free path isλ iz =v sk iz n ewherev s is the velocity of the sputtered neutral metalk iz is the ionization rate coefficientn e is the electron density
High Power Impulse Magnetron Sputtering (HiPIMS)Ionized Physical Vapor Deposition (IPVD)This distance has to be shortv s has to be low - thermalize the sputtered flux - increasedischarge pressuren e has to be highTypical parameters for argon gas and copper targetGas v s [m/s] T e [V] n e [m −3 ] λ iz [cm] DischargeAr 1000 a 3 10 17 162Ar 300 3 10 17 49 dcMSAr 300 3 10 18 4.9 ICP-MS/ECR-MSAr 300 3 10 19 0.5 HiPIMSCu 300 1.5 10 19 7.5 SSS-HiPIMSa (Britun et al. (2008) APL 92 141503)
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High Power Impulse Magnetron Sputtering (HiPIMS)

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