Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film
Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film
difference is changed slightly with the temperature as shown in Fig. 3.16. If the thinfilm transform to superconductor, the phase difference is changed rapidly, as shown inFig. 3.17. According to the changing of the phase difference, we can measure the T cas shown in Fig. 3.18, which is similar with that of the resistance measurementmethod.Fig. 3.18 the calculation of the TcFig. 3.19 the comparison result of resistive and inductorThe advantage of the inductor method is that it can measure the different T c ofthe same thin film. For example, in our experiment, we deposit the Nb and Sn at thesame time. If there is some zone of the film composed of pure Nb after the annealing,there will be two step of phase difference changing, where the high temperature of T cis Nb 3 Sn and the lower temperature of T c is Nb. The disadvantage is that it can not50
measure the RRR. So the resistance method can not be replaced by the inductormethod completely.We fix the frequency of the input signal as 20kHz, and the measurement result isshown in Fig. 3.19. Comparing with the result of resistance, the T c of themeasurement by inductor is higher, but the curve shape is similar.Ⅲ XRD analysisThe crystal structure measured by XRD is shown from Fig. 3.21 to Fig. 3.25. Allthe marked peaks with black number are the crystal plane of Nb 3 Sn. Comparing withthe Nb sputtering current from 1.2A to 1.6A, there are several high peak marked withred number as shown in Fig. 3.20 and Fig. 3.24. For the Nb sputtering current of 1.0A,because the abundant of Sn in the thin film, the peak of the Sn crystal plane of 731appears. The peak of 1’ and 2’ also exit in the figure from Fig. 3.21 to Fig. 3.23, butits value is small. However, the peak of 1’ and 2’ is not the crystal plane of Nb, Sn orNb 3 Sn, its meaning need the further investigation.1101009031A Nb current, lamp annealing for 3 hoursrelative intensity80706050402 1'45 678 9 10 11 12 13 14 151617 3'30201012'18020 30 40 50 60 70 80 90 100 110 120 130 140Angle[degree]Fig. 3.20 the XRD result of Run s1Table 3.3 the description of the peaks of Run s151
- Page 7 and 8: IndexINDEX ........................
- Page 9 and 10: IntroductionThe superconductor acce
- Page 11 and 12: Fig. 1.1 Disc-loaded traveling-wave
- Page 13 and 14: In Type-II superconductors, vortex
- Page 15 and 16: needed for preventing the supercond
- Page 17 and 18: The B1 crystal structure has a cubi
- Page 19 and 20: NbN cavities literature, is often h
- Page 21 and 22: superconducting magnet construction
- Page 23 and 24: 775°C. From the same diagram, it i
- Page 25 and 26: two types of electrons at the Fermi
- Page 27 and 28: Of course, there are some other kin
- Page 29 and 30: as shown in Fig.2.3. The four opera
- Page 31 and 32: Fig.2.8 turbomolecular pumpFig. 2.9
- Page 33 and 34: Fig. 2.14 The chamber covered with
- Page 35 and 36: Fig. 2.17 the gasket and the magnet
- Page 37 and 38: shown in Fig. 2.21 and Fig. 2.22. T
- Page 39 and 40: Fig. 2.26 The interface of the surf
- Page 41 and 42: Fig. 2.30 put the sample into the T
- Page 43 and 44: Fig. 2.34 the performance of the th
- Page 45 and 46: 1008038.5°{110}69.6°{211}sample1s
- Page 47 and 48: 2dsinθ= nλ (2.3)Fig.2.44 the diff
- Page 49 and 50: Chapter 3 Multilayer deposition of
- Page 51 and 52: 1 minute. The time of depositing mu
- Page 53 and 54: chamber 1 and is connected to the s
- Page 55 and 56: 3.2.2.2 Analysis resultⅠ The thic
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- Page 63 and 64: frequency of the cavity which is in
- Page 65 and 66: Fig. 3.28 the inductor coilDuring t
- Page 67 and 68: Fig. 3.32 fixing the sample with Nb
- Page 69 and 70: second transition temperature is th
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- Page 73 and 74: of 1A in the Fig. 3.37 and Fig. 3.4
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- Page 81 and 82: Reference1. A. Godeke, Nb3Sn FOR RA
difference is changed slightly with the temperature as shown in Fig. 3.16. If the thinfilm transform to superconductor, the phase difference is changed rapidly, as shown inFig. 3.17. According to the changing <strong>of</strong> the phase difference, we can measure the T cas shown in Fig. 3.18, which is similar with that <strong>of</strong> the resistance measurementmethod.Fig. 3.18 the calculation <strong>of</strong> the TcFig. 3.19 the comparison result <strong>of</strong> resistive and inductorThe advantage <strong>of</strong> the inductor method is that it can measure the different T c <strong>of</strong>the same thin film. For example, in our experiment, we deposit the Nb and Sn at thesame time. If there is some zone <strong>of</strong> the film composed <strong>of</strong> pure Nb after the annealing,there will be two step <strong>of</strong> phase difference changing, where the high temperature <strong>of</strong> T cis Nb 3 Sn and the lower temperature <strong>of</strong> T c is Nb. The disadvantage is that it can not50
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