Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film
Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film
Fig.2.11 Argon leak valve and all metal valve Fig.2.12 Nitrogen Vent ValveFig. 2.13 Argon Bottle24
Fig. 2.14 The chamber covered with aluminum foils.Fig. 2.15 The cooling curve after baking.In order to reduce the pumping time, the system baking is needed for obtainingthe UHV higher than 10 -7 mbar. We must wait the pressure up to 10 -6 mbar before startbaking in order to be sure that the system don’t have big leak. In order to obtain the25
- Page 1: UNIVERSITÀ DEGLISTUDI DI PADOVAFac
- Page 7 and 8: IndexINDEX ........................
- Page 9 and 10: IntroductionThe superconductor acce
- Page 11 and 12: Fig. 1.1 Disc-loaded traveling-wave
- Page 13 and 14: In Type-II superconductors, vortex
- Page 15 and 16: needed for preventing the supercond
- Page 17 and 18: The B1 crystal structure has a cubi
- Page 19 and 20: NbN cavities literature, is often h
- Page 21 and 22: superconducting magnet construction
- Page 23 and 24: 775°C. From the same diagram, it i
- Page 25 and 26: two types of electrons at the Fermi
- Page 27 and 28: Of course, there are some other kin
- Page 29 and 30: as shown in Fig.2.3. The four opera
- Page 31: Fig.2.8 turbomolecular pumpFig. 2.9
- Page 35 and 36: Fig. 2.17 the gasket and the magnet
- Page 37 and 38: shown in Fig. 2.21 and Fig. 2.22. T
- Page 39 and 40: Fig. 2.26 The interface of the surf
- Page 41 and 42: Fig. 2.30 put the sample into the T
- Page 43 and 44: Fig. 2.34 the performance of the th
- Page 45 and 46: 1008038.5°{110}69.6°{211}sample1s
- Page 47 and 48: 2dsinθ= nλ (2.3)Fig.2.44 the diff
- Page 49 and 50: Chapter 3 Multilayer deposition of
- Page 51 and 52: 1 minute. The time of depositing mu
- Page 53 and 54: chamber 1 and is connected to the s
- Page 55 and 56: 3.2.2.2 Analysis resultⅠ The thic
- Page 57 and 58: In order to detect the component of
- Page 59 and 60: measure the RRR. So the resistance
- Page 61 and 62: 110100903480relative Intensity70605
- Page 63 and 64: frequency of the cavity which is in
- Page 65 and 66: Fig. 3.28 the inductor coilDuring t
- Page 67 and 68: Fig. 3.32 fixing the sample with Nb
- Page 69 and 70: second transition temperature is th
- Page 71 and 72: source is the bulk Nb sample. Altho
- Page 73 and 74: of 1A in the Fig. 3.37 and Fig. 3.4
- Page 75 and 76: Table 3.10 the description of the p
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- Page 79 and 80: 1101009080341.8A10'INDrelative inte
- Page 81 and 82: Reference1. A. Godeke, Nb3Sn FOR RA
Fig. 2.14 The chamber covered with aluminum foils.Fig. 2.15 The cooling curve after baking.In order to reduce the pumping time, the system baking is needed for obtainingthe UHV higher than 10 -7 mbar. We must wait the pressure up to 10 -6 mbar before startbaking in order to be sure that the system don’t have big leak. In order to obtain the25
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