Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film
Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film Magnetron sputtering of Superconducting Multilayer Nb3Sn Thin Film
Chapter 2 Introduction: How to sputter Nb thin film2.1 Technique of the vacuumFrom the Eq.(1.6), the RRR of the same material is determined by the residualsurface resistance, which is fundamentally determined by the purity of the thin film.The method to improve the purity is to improve the base pressure of the sputteringchamber. So the ultra high vacuum (UHV) system is needed for obtaining the vacuumpressure higher than 10 -7 mbar. The vacuum system is shown as Fig. 2.1 and Fig. 2.2.Fig. 2.1the front view of the systemFig. 2.2 the top view of the systemThe UHV system is composed of four operation chamber and one main chamber20
as shown in Fig.2.3. The four operation chamber is linked with the main chamber byall metal valves. The main chamber is pumped by the turbomolecular pump and rotarypump. The gate valve is used for separating the main chamber and the pump. Thenitrogen linked by the venting valve is used for venting the vacuum. The argon linkedby the leak valve is the sputtering proceeding gas. A vacuum gauge is used formeasurement the pressure of the main chamber. The chamber 1 is used for the sampledeposition by magnetron. The chamber 2 is used for 6 GHz cavity deposition. Thechamber 3 is used for annealing by an inductor. The chamber 4 is used for annealingby a lamp. The 3 dimensional design of the system by the Inventor is shown asFig.2.4.Fig. 2.3 the scheme of the UHV systemFig. 2.4 3-Ddesign of the UHV system21
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as shown in Fig.2.3. The four operation chamber is linked with the main chamber byall metal valves. The main chamber is pumped by the turbomolecular pump and rotarypump. The gate valve is used for separating the main chamber and the pump. Thenitrogen linked by the venting valve is used for venting the vacuum. The argon linkedby the leak valve is the <strong>sputtering</strong> proceeding gas. A vacuum gauge is used formeasurement the pressure <strong>of</strong> the main chamber. The chamber 1 is used for the sampledeposition by magnetron. The chamber 2 is used for 6 GHz cavity deposition. Thechamber 3 is used for annealing by an inductor. The chamber 4 is used for annealingby a lamp. The 3 dimensional design <strong>of</strong> the system by the Inventor is shown asFig.2.4.Fig. 2.3 the scheme <strong>of</strong> the UHV systemFig. 2.4 3-Ddesign <strong>of</strong> the UHV system21
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