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Analytical Forced Convection Modeling of Plate Fin Heat Sinks

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<strong>Analytical</strong> <strong>Forced</strong> <strong>Convection</strong> <strong>Modeling</strong> <strong>of</strong><strong>Plate</strong> <strong>Fin</strong> <strong>Heat</strong> <strong>Sinks</strong>P. Teertstra, M.M. Yovanovich and J.R. CulhamMicroelectronics <strong>Heat</strong> Transfer LaboratoryDepartment <strong>of</strong> Mechanical EngineeringUniversity <strong>of</strong>WaterlooWaterloo, Ontario, CanadaT.F. LemczykR-Theta Inc.Mississauga, Ontario, CanadaSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Introduction: <strong>Plate</strong> <strong>Fin</strong> <strong>Heat</strong> <strong>Sinks</strong> <strong>Heat</strong> transfer enhancement for air cooled applications:{ increase eective surface area{ decrease thermal resistance{ reduce operating temperatures <strong>Plate</strong> n heat sinks most commonconguration <strong>Heat</strong> convected by ow through channels between nsSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Introduction: <strong>Heat</strong> Sink Selection Numerous plate n heat sinks currently available <strong>Heat</strong> sink selection depends on many factors:{ performance{ dimensional constraints{ available airow{ cost Quick and accurate design tools are required:{ predict performance early in design{ perform trade o or \what if?" studies{ alternative to numerical simulation, experimentsSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Objectives Develop analytical forced convection model for averageheat transfer rate for plate n heat sinks:{ laminar ow{ full range <strong>of</strong> developing and fully developed ow{ non-isothermal ns Perform experimental measurements for commercial heatsink and compare results with modelSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Problem Denition - <strong>Plate</strong> <strong>Fin</strong> <strong>Heat</strong> Sink Array <strong>of</strong>N plates in perfect contact with baseplate Baseplate assumptions:{ isothermal{ adiabatic lower surface, edges Uniform velocity through channelswith no \leakage" out edges:{ shrouded heat sink{ with ow bypass model for un-shrouded heat sinks <strong>Heat</strong> sink modeled as N ; 1 parallel plate channelsSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Problem Denition - Parallel <strong>Plate</strong> Channel Assume b H:{ 2D channel ow{ neglect baseplate, shroud eects Isothermal boundary conditions Reynolds number: Nusselt number:Nu b =Re b = UbQbkA(T w ; T a ) A =2LHSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model Development - Parallel <strong>Plate</strong> Channel <strong>Forced</strong> convection solutions available for 2 limiting cases:{ fully developed ow { developing ow Churchill and Usagi (1972) composite solution:i;1=nNu b =h(Nu fd ) ;n +(Nu dev ) ;nDeveloping Flowlog( Nu b)Fully-DevelopedComposite Solutionlog( Re b)SEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model Development: Fully Developed Flow Asymptote Enthalpy balance assuming uid exit temperature = T wQ = _mc p (T w ; T a ) Fully developed ow asymptote:Nu b = 1 2 Re? b Prwhere channel Reynolds number dened as:Re ? b = Re b b LSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model Development - Developing Flow Asymptote Laminar forced convection solution in entrance <strong>of</strong> at,rectangular duct (Sparrow, 1955):Nu dev =0:664 p Re ? b Pr1=3 1+ 3:65p Re?bvalid for Pr 1.! 1=2 Approaches the at plate solution for large Re ? b :Nu L =0:664pReL Pr 1=3SEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model Summary - Parallel <strong>Plate</strong> Channel26 Re?bNu b = 4Pr2;n+0! 11=2p@ 0:664 Re?b Pr1=3 1+ p 3:65 ARe?b;n375;1=nNu b10 110 0Numerical Data10 -1 Combination parameter fromFLOTHERM solutionsn =3 2.1 % RMS dierence betweenmodel and numerical dataModel10 -210 -1 10 0 10 1 10 2Re b*SEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model Development - <strong>Heat</strong> Sink with Non-Isothermal <strong>Fin</strong>s High aspect ratio heat sinks:{ tall thin ns, small spacing{ increased surface area for convection{ eciency reduced <strong>Fin</strong> eciency : = Nu bNu iwhere Nu i \ideal" value from channel modelSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model Development - <strong>Heat</strong> Sink with Non-Isothermal <strong>Fin</strong>s Assume adiabatic condition at n tip:stanh (mH)hP = m = h = Nu i k fmHkA c b =tanhss2 Nu ik fk2 Nu ik fkHbHbHt H tL +1t tL +1SEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model SummaryNu bQ = Nu b kA (T s ; T a )b= Nu i tanh26 Re?bNu i = 4Pr2ss2 Nu ik fk2 Nu ik fk;3+ NHbHbHt H tt L +1 tL +10! 1 31=2;3;1=3p@ 0:664 Re?b Pr1=3 1+ p 3:65 A 7Re? 5bSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Experimental Apparatus High aspect ratio heat sink H=b 20 Back-to-back arrangement <strong>Heat</strong> sinks in Plexiglas shroud Approach velocity measured withhot wire anemometer Temperatures measured at 4locations on baseplate Radiation losses measured inseparate experimentSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Experimental Procedure Measurements performed for the following cases:U aQ tot2 3 4 5 6 7 8 m=s100 200 300 400 500 W Re ? related to approach velocity U b a by continuity: Re ? = Ub2 Ao bbL = A 2U aL Nusselt number:Nu b =(Q tot =2) bkN(2 LH) ; T s ; T aSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Model Validation543Nu b2Experimental DataChannel Model<strong>Heat</strong> Sink Model110 20 30 40 50Re b*SEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


Summary and Conclusions <strong>Analytical</strong> forced convection model developed foraverage heat transfer rate for plate n heat sinks{ 2D channel model for shrouded high aspect ratioheat sinks, b H{ Temperature variation between ns and baseplate Model in excellent agreement with measured values:{ 2.1 %RMSdierence{ 6 % maximum dierenceSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo


AcknowledgmentsThe authors gratefully acknowledge the support <strong>of</strong>: R-Theta Materials and Manufacturing OntarioSEMI-THERM XVMarch 9, 1999Microelectronics <strong>Heat</strong> Transfer LaboratoryUniversity <strong>of</strong>Waterloo

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