GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 ...

GENERAL PURPOSEDUAL-GATE GaAS MESFETNE25139FEATURES• SUITABLE FOR USE AS RF AMPLIFIER INUHF TUNERPOWER GAIN AND NOISE FIGURE vs.DRAIN TO SOURCE VOLTAGEGPS• LOW CRSS: 0.02 pF (TYP)2010• HIGH GPS: 20 dB (TYP) AT 900 MHz• LOW NF: 1.1 dB TYP AT 900 MHz• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm• ION IMPLANTATION• AVAILABLE IN TAPE & REEL OR BULKPower Gain, GPS (dB)10VG2S = 1 VVG2S = 0.5 VVG2S = 2 VID = 10 mAf = 900 MHzNF5Noise Figure, NF (dB)DESCRIPTION00 5 10Drain to Source Voltage, VDS (V)0The NE251 is a dual gate GaAs FET designed to provideflexibility in its application as a mixer, AGC amplifier, or lownoise amplifier. As an example, by shorting the second gateto the source, higher gain can be realized than with single gateMESFETs. This device is available in a mini-mold (surfacemount) package.ELECTRICAL CHARACTERISTICS (TA = 25°C)PART NUMBERNE25139PACKAGE OUTLINE 39SYMBOL PARAMETERS AND CONDITIONS UNITS MIN TYP MAXNFNoise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,f = 900 MHz dB 1.1 2.5GPSPower Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,f = 900 MHz dB 16 20BVDSX Drain to Source Breakdown Voltage at VG1S = -4 V,VG2S = 0, ID = 10 µA V 13IDSS Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V mA 5 20 40VG1S (OFF) Gate 1 to Source Cutoff Voltage at VDS = 5 V,VG2S = 0 V, ID = 100 µA V -3.5VG2S (OFF) Gate 2 to Source Cutoff Voltage at VDS = 5 V,VG1S = 0 V, ID = 100 µA V -3.5IG1SS Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 µA 10IG2SS Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 µA 10|YFS| Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,ID = 10 mA, f = 1.0 kHz mS 18 25 35CISSInput Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,f = 1 MHz pF 0.5 1.0 1.5CRSS Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,ID = 10 mA, f = 1 MHz pF 0.02 0.03California Eastern Laboratories

NE25139ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C)SYMBOLS PARAMETERS UNITS RATINGSVDS Drain to Source Voltage V 13VG1S Gate 1 to Source Voltage V -4.5VG2S Gate 2 to Source Voltage V -4.5ID Drain Current mA IDSSPT Total Power Dissipation mW 200TCH Channel Temperature °C 125TYPICAL NOISE PARAMETERS (TA = 25°C)(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)FREQ. NFOPT GA ΓOPT(GHz) (dB) (dB) MAG ANG Rn/500.5 0.9 18.5 0.9 18 1.90.9 1.2 16.0 0.82 28 1.21.5 1.5 14.6 0.71 45 0.92.0 1.9 12.5 0.55 75 0.673.0 2.5 11.0 0.34 116 0.54.0 3.3 9.5 0.25 154 0.4TSTG Storage Temperature °C -55 to +125Note:1. Operation in excess of anyone of these parameters may resultin permanent damage.TYPICAL PERFORMANCE CURVES (TA = 25 °C)250TOTAL POWER DISSIPATION VS.AMBIENT TEMPERATURE30DRAIN CURRENT vs.GATE 1 TO SOURCE VOLTAGEVDS = 5VTotal Power Dissipation, PT (mW)20015010050FREE AIRDrain Current, ID (mA)2010VG2S = 1.0V0.5 V0 V-0.5 V00 25 50 75 100 125Ambient Temperature, TA (°C)0-2.0 -1.0 0 +1.0Gate 1 to Source Voltage, VG1S (V)FORWARD TRANSFER ADMITTANCE vs.GATE 1 TO SOURCE VOLTAGEFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENTForward Transfer Admittance, |YFS| (mS)3020100VDS = 5Vf = 1kHz-0.5 VVG2S = 1.00.5 V0 VForward Transfer Admittance, |YFS| (mS)3020100VG2S = 0.5 VVG2S = 1.0 VVDS = 5 Vf = 1 kHz-2.0-1.0 0 +1.00 10 20 30Gate 1 to Source Voltage, VG1S (V)Drain Current, ID (mA)

NE25139TYPICAL PERFORMANCE CURVES (TA = 25°C)Input Capacitance, CISS (pF)2.01.0INPUT CAPACITANCE vs.GATE 2 TO SOURCE VOLTAGEVG2S = 1 V at ID = 10 mA1VDS = 5 Vf = 1kHz1VG2S = 1 V at ID = 5 mAPower Gain, GP (dB)30150-15-30POWER GAIN AND NOISE FIGURE vs.GATE 2 TO SOURCE VOLTAGE1VDS = 5 VVG2S = 1 VID = 10 mAf = 900 MHzNFGPS105Noise Figure, NF (dB)-1.0 0 +1.0Gate 2 to Source Voltage, VG2S (V)Note:1. Initial bias conditions. VG1S set to obtainspecified drain current.-45-3.0 -2.0 -1.0 0 +1.0 +2.0Gate 2 to Source Voltage, VG2S (V)Note:1. Initial bias conditions. VG1S set to obtainspecified drain current.0Power Gain, GP (dB)252015105POWER GAIN AND NOISE FIGURE vs.DRAIN CURRENTVDS = 5 VVG2S = 1 Vf = 900 MHzGPSNF105Noise Figure, NF (dB)000 5 10Drain Current, ID (mA)

NE25139NONLINEAR MODELUNITS FOR MODEL PARAMETERSParameter UnitstimecapacitanceinductanceresistancevoltagecurrentsecondsfaradshenriesohmsvoltsampsFET NONLINEAR MODEL PARAMETERS (1)Parameters FET1 FET2 Parameters FET1 FET2UGW 100e-6 100e-6 IDSOC 0.07 0.07NGF 4 4 RDB 1.0e9 1.0e9IS 8.78e-10 8.78e-10 CBS 0.16e-12 0.16e-12N 1.33 1.33 GDBM 0.005 0.005RG 0 0 KDB 11.1 11.1RD 0 0 VDSM 7.1e-11 7.1e-11RS 0 0 GMMAXAC 0.0475 0.0875RIS 0 0 GAMMAAC 0.0107 0.0051RID 0 0 KAPAAC 0.0001 0.0052TAU 5.17e-12 5.17e-12 PEFFAC 44.9 44.9CDSO 1.19e-13 1.19e-13 VTOAC -1.584 -1.545C11O 6.1e-13 6.1e-13 VTSOAC -100 -100C11TH 1.6e-13 1.6e-13 VDELTAC 0.062 0.062VINFL -1.1 -1.1 GMMAX 0.0554 0.0304DELTGS 1.82 1.82 GAMMA 0.006 0.005DELTDS 0.682 0.682 KAPA 0.046 0.0005LAMBDA \0.036 0.036 PEFF 1.636 1.636C11DELT 0 0 VTO -1.57 -1.5C12O 0 0 VTSO -100 -10C12SAT 6.81e-14 6.81e-14 VDELT 0.135 0.1CGDSAT 6.81e-14 6.81e-14 VCH 1 1KBK 0.03 0.03 VSAT 1.119 1.119VBR 6.5 6.5 VGO -0.654 -0.0035NBR 2 2 VDSO 3 10(1) Libra EEFET3 Model

NE25139NONLINEAR MODELSCHEMATICPORTPdrainport = 2CAPCg2dC = 0.15RESRdR = 4.58PORTP1port = 3INDLg2L = 0.40RESRg2R = 1.44EEFET3FET2UGW=0N=0FILE = NE720_b.mdifMODE = nonlinearCAPC12C = 0.32CAPCg1dC = 5.64e-03RESR12R = 1.13RESRDSR = 711PORTPgate1port = 1INDLg1L = 1.65RESRg1R = 1.52EEFET3FET1UGW=0N=0FILE = NE720_b.mdifMODE = nonlinearCAPCDSC = 7.60e-02CAPCg1sC = 0.41RESRsR = 5.79CAPCg2sC = 0.39INDLsL = 1.78UNITSParameter Unitscapacitance picofaradsinductance nanohenriesresistance ohmsNOTES:1. This UGW value scales the model parameters on page 1.2. This N value is the number of gate fingers and scales themodel parameters on page 1.PORTP4port = 4MODEL RANGEFrequency: 0.1 to 4 GHzBias: VDS = 5 V, Vg1s= -0.785 V, Vg2s= 0 V, ID = 10 mA

NE25139TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)j10j25j50j100j150j250+150˚+120˚S211.2 GHz+90˚+60˚+30˚0-j10S2210 25 50 100 150 250 .1 GHz-j25-j50NE25139VDS = 5 V, VG2S = 1 V, ID = 10 mAS224 GHzS114 GHz-j100-j150S11.1 GHz-j250-150˚Coordinates in OhmsFrequency in GHz(VDS = 5 V, VG2S = 1 V, ID = 10 mA)FREQUENCY S11 S21 S12 S22(GHz) MAG ANG MAG ANG MAG ANG MAG ANG0.1 .99 -3 2.36 177 .001 87 .97 -10.2 .99 -7 2.39 169 .001 85 .98 -30.3 .99 -9 2.31 164 .002 82 .98 -30.4 .98 -13 2.23 160 .002 82 .97 -60.5 .97 -16 2.42 158 .003 81 .99 -60.6 .97 -19 2.30 150 .003 81 .96 -80.7 .96 -22 2.33 146 .004 80 .99 -90.8 .95 -25 2.23 142 .005 79 .96 -90.9 .94 -29 2.45 137 .005 79 .99 -131.0 .92 -29 2.30 131 .006 78 .97 -111.1 .91 -35 2.35 126 .006 78 .98 -151.2 .88 -35 2.37 124 .006 78 .99 -13+180˚–-120˚1.01.52.0S21 2.5-90˚.5.10.15-60˚.20.25 0˚-30˚K S21 MAG 1(dB) (dB)0.47 5.83 2.90.51 5.7 32.80.70 5.6 32.81.14 5.6 27.51.18 5.6 24.21.49 5.6 22.62.03 5.5 19.22.21 3.6 16.61.34 3.0 17.20.32 2.9 17.80.04 2.1 15.10.07 1.6 14.6Note:1. Gain Calculations:MAG =|S21||S12|(K ± When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21|2, K =1 + | ∆ | - |S11|2 2 - |S22|, ∆ = S11 S22 - S21 S12|S12|2 |S12 S21|2K - 1 ).MAG = Maximum Available Gain, MSG = Maximum Stable GainOUTLINE DIMENSIONS (Units in mm)2.9 ± 0.2 0.95PINCONNECTIONS1. Source2. Drain3. Gate 24. Gate 10.851.1 +0.2-0.1PACKAGE OUTLINE 39(SOT-143)0.6 +0.10-0.050.812.8 +0.2-0.31.5 +0.2-0.12 34+0.100.4 -0.05(LEADS 2, 3, 4)1.90.16 +0.10 -0.06ORDERING INFORMATIONPART AVAILABILITY IDSS RANGE MARKINGNUMBER(mA)NE25139 Bulk up to 3K 5 - 40NE25139-T1 3K/Reel 5 - 40NE25139U71 Bulk up to 3K 5 - 15 U71NE25139T1U71 3K/Reel 5 - 15 U71NE25139U72 Bulk up to 3K 10 - 25 U72NE25139T1U72 3K/Reel 10 - 25 U72NE25139U73 Bulk up to 3K 20 - 35 U73NE25139T1U73 3K/Reel 20 - 35 U73NE25139U74 Bulk up to 3K 30 - 40 U74NE25139T1U74 3K/Reel 30 - 40 U745˚5˚0 to 0.1Note: All dimensions are typical unless otherwise specified.EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORSCALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-027924-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COMDATA SUBJECT TO CHANGE WITHOUT NOTICE8/98