Silicon-based solar cells Characteristics and production processes ...

Silicon-based solar cells – characteristics and production processes
[28] C. Lévy-Clément, S. Lust, S. Bastide, Q. N. Lê, Dominique Sarti, ”Macropore Formation on P-type
Multicrystalline Silicon and Solar Cells”, Proc. of the 3 rd International Conference Porous
Semiconductors – Science and Technology, 10-15 March 2002, Puerto de la Cruz, p. 8-9.
[29] H. F. W. Dekkers, F. Duerinckx, J. Szlufcik, J. Nijs, ”Silicon Surface Texturing by Reactive Ion
Etching”, Opto-electronics Rev., 8 (2000), p. 311-316.
[30] M. Lipiński, P. Panek, E. Bełtowska, V. Yerokhov, ”Investigation of Macroporous Layer by
Chemical Etching for Silicon Solar Cell Manufacturing”, Proc. of the 17 th European Photovoltaic
Solar Energy Conference, 22-26 October 2001, Munich, p. 1786-1788.
[31] J. Zhao, A. Wang, M. Green, ”19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb
Textured Front Surface”, Proc. of the 2 nd World Conference on Photovoltaic Solar Energy
Conversion, 6-10 July 1998, Vienna, p. 1681-1684.
[32] M. J. Stocks, A. J. Carr, A. W. Blakers, ”Texturing of Polycrystalline Silicon”, Solar Energy
Materials and Solar Cells, 40, (1996), p. 33-42.
[33] J. Szlufcik, F. Duerinckx, J. Horzel, E. van Kerschaver, R. Einhaus, K. De Clerco, H. Dekkers, J. Nijs,
”Advanced Concepts of Industrial Technologies of Crystalline Silicon Solar Cells”,
Optoelectronics Rev., 8, (2000), p. 299-306.
[34] H. Nagel, A. G. Aberle, R. Hezel, ”Optimised Antireflection Coatings for Planar Silicon Solar Cells
Using Remote PECVD Silicon Nitride and Porous Silicon Dioxide”, Progress in Photovoltaics:
Research and Applications, 7, (1999), p. 245-260.
[35] C. Lévy-Clément,”Optical Properties of Porous Silicon Tuned by Electrochemical Reactions:
Application to High Efficiency Solar Cells” in ”Mass and Charge Transport in Inorganic Materials:
Fundamentals and Devices”, P. Vincenzini, V. Buscaglia, Techna Srl, 2000, p. 1311-1322.
[36] I. Lee, D. G. Lim, K. H. Kim, S. H. Kim, S. H. Lee, D. W. Kim, E. C. Choi, D. S. Kim, J. Yi, ”Efficiency
Improvement of Buried Contact Solar Cells Using MgF 2 /CeO 2 Double Layer Antireflection
Coatings”, Proc. of the 28 th IEEE Photovoltaic Specialistis Conference, 15-22 September 2000,
Anchorage, p. 403-406.
[37] B. Lenkeit, T. Lauinger, A. G. Aberle, R. Hezel, ”Comparison of Remote Versus Direct PECVD
Silicon Nitride Passivation of Phosphorus-Diffused Emitters of Silicon Solar Cells”, Proc. of the
2 nd World Conf. and Exibition on Photovoltaic Solar Energy Conversion, 6-10 Juli, 1998, Vienna,
p. 1434-1437.
[38] R. K. Pandey, L. S. Patit, J. P. Bange, D. K. Gautam, ”Growth and Charakterization of Silicon
Nitride Films for Optoelektronics Application”, Optical Materials, 27, (2004), p. 139-146.
[39] S. R. Bryce, J. E. Cotter, C. B. Honsberg, S. R. Wenham, ”Novel Uses of TiO 2 in Crystalline Silicon
Solar Cells”, Proc. of the 28 th IEEE Photovoltaic Specialists Conference, 15-22 September, 2000,
Anchorage, p. 375-378.
[40] J. E. Cotter, B. S. Richards, F. Ferraza, C. B. Honsberg, T. W. Leong, H. R. Mehrvarz, G. A. Naik,
S. R. Wenham, ”Design of a Simplified Emiter Structure for Buried Contact Solar Cells”, Proc.
of the 2 nd World Conf. and Exibition on Photovoltaic Solar Energy Conversion, 6-10 Juli, 1998,
Vienna, p. 1511-1514.
[41] B. C. Charkravarty, P. N. Vinod, S. N. Singh, B. R. Chakraborty, ”Design and Simulation
of Antireflection Coating for Application to Silicon Solar Cells”, Solar Energy Mater. Solar Cells,
73, (2002), p. 56-66.
[42] R. Ahmad-Bitar, D. E. Arafah, ”Processing Effects on the Structure of CdTe, CdS and SnO 2 Thin
Films”, Solar Energy Mater. Solar Cells, 51, (1998), p. 83-93.
[43] C. Beneking, W. A. Nositschka, O. Kluth, G. Schőpe, F. Birmans, H. Siekmann, B. Rech,
”Application of Textured Zink Oxide Films to Obtain Black Multicrystalline Silicon Solar Cell”,
Proc. of the 16 th European Photovoltaic Solar Energy Conference, 1-5 May, 2000, Glasgow,
p. 1230-1233.
[44] E. G. Woelk, H. Kräutle, H. Beneking, ”Measurement of Low resistive Ohmic Contacts
on Semiconductors”, IEEE Trans. on Electron Devices, ED-33, (1986), p. 19-22.
65