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Silicon-based solar cells Characteristics and production processes ...

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<strong>Silicon</strong>-<strong>based</strong> <strong>solar</strong> <strong>cells</strong> – characteristics <strong>and</strong> <strong>production</strong> <strong>processes</strong><br />

Fig. 20. System of squeegees brushing the paste over the sieve <strong>and</strong> pressing the paste<br />

through the meshes onto the plate’s surface (left) <strong>and</strong> a sequence of paste printing in the<br />

process of creating the front electrode with the screen process method (right).<br />

Fig. 21. Scheme of a plate section after the deposition of consecutive paste layers with the<br />

screen process method.<br />

V. Thermal process of electrode metallization<br />

After drying the paste, the plate is fired in an IR furnace, in purified natural<br />

atmosphere or in N 2 . The actual temperature of the electrode metallization process<br />

depends on the temperature in the particular consecutive heat zones of the furnace<br />

<strong>and</strong> the speed of the tape transport. The temperature profile of the metallization<br />

process must be set in such a way so that the Ag paste can penetrate the Si x N y :H layer<br />

<strong>and</strong> create an alloy with the upper Si emitter layer of the n-type, but which can<br />

absolutely not diffuse inside the area of the space charge. At the same time, in this<br />

process, at the temperature of above 577 o C, Al diffuses from the paste deposited on<br />

the rear surface of the plate, at the depth of about 5 µm, <strong>and</strong> compensates the<br />

existing area of the n-type conductivity <strong>and</strong> the thickness of ~ 0,5 µm, changing the<br />

conductivity type into p, with a simultaneous formation of the Al-Si alloy. A part of<br />

the diffusing Al atoms assumes the substituting positions in the crystal Si lattice,<br />

35

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