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Silicon-based solar cells Characteristics and production processes ...

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<strong>Silicon</strong>-<strong>based</strong> <strong>solar</strong> <strong>cells</strong> – characteristics <strong>and</strong> <strong>production</strong> <strong>processes</strong><br />

As it can be concluded from the comparative analysis of the photovoltaic<br />

conversion efficiency E ff of <strong>cells</strong> <strong>and</strong> PV modules, the efficiency of the latter is always<br />

lower than that of the <strong>cells</strong>, due to the proportion of the total surface of the <strong>cells</strong> to<br />

the surface of the module, which is always lower than unity, <strong>and</strong> also, due to the<br />

slight reflection of light from the glass panels which protect the module <strong>and</strong> which<br />

are simultaneously its carrying material, as well as from the foils hermetizing the <strong>cells</strong><br />

in the module.<br />

.<br />

34%<br />

8% 5%<br />

3% 1%<br />

49%<br />

mc Si<br />

Cz-Si<br />

CdTe<br />

a-Si<br />

R-Si<br />

CIGS<br />

Fig. 2. Proportional share of a given <strong>solar</strong> cell type in the total <strong>solar</strong> cell <strong>production</strong> of global<br />

photovoltaics in 2008 [2].<br />

The comparison of the proportional share of particular types of <strong>solar</strong> <strong>cells</strong><br />

manufactured in 2008 unequivocally points to the domination of the crystalline<br />

silicon-<strong>based</strong> <strong>cells</strong> <strong>and</strong> a significant share of the thin-layer <strong>cells</strong> type CdTe <strong>and</strong> CIGS.<br />

In 2009, the share of the thin-layer <strong>cells</strong> increased up to nearly 19 %, due to the<br />

increase in the CdTe cell <strong>production</strong> by the American company, First Solar. The issue<br />

necessary to resolve is the five-percent share of the a-Si amorphous silicon-<strong>based</strong><br />

<strong>cells</strong>. This value partially refers to the HIT –type <strong>cells</strong> produced by the Japanese<br />

company, Sanyo, whose base material is mono-crystalline silicon, <strong>and</strong> the emitter is<br />

formed by an amorphous silicon layer.<br />

The domination of the Cz-Si <strong>and</strong> mc-Si <strong>cells</strong> results from several facts, which can<br />

be presented in the following points:<br />

• A very good knowledge of the material <strong>and</strong> a developed research <strong>and</strong><br />

diagnostic, Si-oriented, base, also resulting from the previous achievements of<br />

the electronic industry.<br />

7

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