SGS Discrete Power Devices 5ed 1982 - Trailing-Edge

criterion (408) 988-6300
manufacturers representatives
3350 Scott Blvd .• Bldg. 44. Santa Clara. CA 95051

ISSUED OCTOBER 1982
INTRODUCTION
This databook contains data sheets on the SGS-ATES range of discrete power devices
for professional, industrial and consumer applications.
Selection guides are provided in the following pages to facilitate rapid identification of
the most suitable device for the intended use.
The information on each product has been specially presented in order that the performance
of the product can be readily evaluated within any required equipment design.

SGS-ATES GROUP OF COMPANIES
INTERNATIONAL HEADQUARTERS
SGS-A TES Componenti Elettronici SpA
Via C. Olivetti 2 - 20041 Agrate Brianza - Italy
Tel.: 039 - 65551
Telex: 330131-330141
BENELUX
SGS-ATES Componentl Elettronici SpA
Benelux Sales Office
B- 1180 Bruxelies
Winston Churchill Avenue, 122
Tel.: 02 - 3432439
Telex: 24149 B
DENMARK
SGS-ATES Scandinavia AB
Sales Office
2730 Herlev
Herlev Torv, 4
Tel.: 02 - 948533
Telex: 35411
EASTERN EUROPE
SGS-ATES Componenti Elettronici SpA
Export Sales Office .
20041 Agrate Brianza - Italy
Via C. Olivetti, 2
Tel.: 039 - 6555287/6555207
Telex: 330131-330141
FRANCE
SGS-ATES France SA.
75643 Paris Cedex 13
Residence "Le Palatino"
17, Avenue de Choisy
Tel.: 01 - 5842730
Telex: 042 - 250938
WEST GERMANY
SGS-ATES Deutschland Halbleiter
Bauelemente GmbH
8018 Grafing bei Munchen
Haidling,17
Tel.: 08092-690
Telex: 05 27378
Sales Offices:
3012 Langenhagen
Hubertu5strasse, 7
Tel.: 0511 - 772075/7
Telex: 0923195 .
8000 Munchen 90
Tegernseer Landstr., 146
Tel.: 089 - 6925100
Telex: 05215784
8500 Nu rnberg 30
Ostendstr ... 204
Tel.: 0911-572977/78179
Telex: 0626243
7000 Stuttgart 80
Kalifenweg,45
Tel.: 0711 - 713091/2
Telex: 07 255545
HONG KONG
SGS-ATES Singapore (Pte) Ltd.
9th Floor, Block N,
Kaiser Estate, Phase III,
11 Hok Yuen St.,
Hung Hom, Kowloon
Tel.: 3-644251/5
Telex: 63906 ESG I E HX
ITALY
SGS-ATES Componenti Elettronici SpA
Direzione Commerciale Italia
20149 Milano
Via Correggio, 1/3
Tel.: 02 - 4695651
Sales Office :
40128 Bologna
Via Corticella, 231
Tel.: 051 - 326684
00199 Roma
Piazza Gondar, 11
Tel.: 06 - 8392848/8312777
SINGAPORE
SGS-ATES Singapore (Pte) Ltd.
Singapore 1231
Lorang 4 & 6 - T oa Payoh
Tel.: 2531411
Telex: ESGIES RS 21412
SWEDEN
SGS-ATES Scandinavia AB
19501 Marsta
Box 144
Tel.: 0760 - 40120
Telex: 042 - 10932
SWITZERLAND
SGS-ATES Componenti Elettronici SpA
Swiss Sales Offices
6340 Baar
Oberneuhofstrasse, 2
Tel.: 042 - 315955
Telex: 864915
1218 Grand-Saconnex (Geneve)
Chemin Fran~ois-Lehmann 22
Tel.: 022 - 986462/3
Telex: 28895
UNITED KINGDOM
SGS-ATES (United Kingdom) Ltd.
Aylesbury, Bucks
Planar House, Walton Street
Tel.: 0296 - 5977
Telex: 041 - 83245
U.S.A.
SGS-ATES Seminconductor Corporation
Scottsdale, AZ 85251
7117, East 3rd Avenue
Tel.: (602) 990-9553
Telex: SGS ATES SCOT 165808
75248 Dalias, TX
16970 Dallas North Parkway
Building 700, Suite 702
Tel.: (214) 733-1515
Des Plaines, IL 60018
2340, Des' Plaines Ave Suite 309
Tel.: (312) 296-4035
Telex: 282547
Santa Clara, CA 95051
2700, Augustine Drive
Tel.: (408) 727-3404
Telex: 346402
Waltham, MA 02154
240, Bear Hill Road
Tel.: (617) 890-6688
Telex: 923495 WHA
Woodland Hills, CA 91367
6355, Topange Canyon Boulevard
Suite 220
Tel.: (213) 716-6600
Telex: 182863
2

TABLE OF CONTENTS
ALPHANUMERICAL INDEX
Page 4
SELECTION GUIDES BASED ON TECHNOLOGY AND
PACKAGES
8
CROSS REFERENCE GUIDE
19
ALPHABETICAL LIST OF SYMBOLS
28
RATING SYSTEMS FOR ELECTRONIC DEVICES
31
QUALITY (SURE 3)
33
HANDLING OF POWER PLASTIC TRANSISTOR
34
ACCESSORIES AND MOUNTING INSTRUCTIONS
38
DATA-SHEETS
47
3

ALPHANUMERICAL INDEX
Type Page Type Page Type Page
BO 175 48 BO 436 82 BO 911 120
BO 176 52 BO 437 78 BO 912 124
BO 177 48 BO 438 82 BOV 64 128
BO 178 52 BO 439 86 BOV 64A 128
BO 179 48 BO 440 90 BOV 64B 128
BO 180 52 BO 441 86 BOV 65 128
BO 233 56 BO 442 90 BOV 65A 128
BO 234 60 BO 533 94 BOV 65B 128
BO 235 56 BO 534 98 BOW51 133
BO 236 60 BO 535 94 BOW 51A 133
BO 237 56 BO 536 98 BOW 51B 133
BO 238 60 BO 537 94 BOW 51C 133
BO 239 64 BO 538 98 BOW 52 138
BO 239A 64 BO 675A 102 BOW 52A 138
BO 239B 64 BO 676A 106 BOW 52B 138
BO 239C 64 BO 677 102 BOW 52C 138
BO 240 66 BO 677A 102 BOW 91 143
BO 240A 66 BO 678 106 BOW 92 147
BO 240B 66 BO 678A 106 BOW 93 151
BO 240C 66 BO 679 102 BOW93A 151
BO 241 70 BO 679A 102 BOW 93B 151
BO 241A 70 BO 680 106 BOW 93C 151
BO 241B 70 BO 680A 106 BOW 94 156
BO 241 C 70 BO 681 102 BOW94A 156
BO 242 72 BO 682 106 BOW 94B 156
BO 242A 72 BO 705 110 BOW 94C 156
BO 242B 72 BO 706 115 BOX 53 161
BO 242C 72 BO 707 110 BOX 53A 161
BO 243 74 BO 708 115 BOX 53B 161
BO 243A 74 BO 709 110 BOX 53C 161
BO 243B 74 BO 710 115 BOX 53E 165
BO 243C 74 BO 711 110 BOX 53F 165
BO 244 76 BO 712 115 BOX 53S 169
BO 244A 76 BO 905 120 BOX 54 173
BO 244B 76 BO 906 124 BOX 54A 173
BO 244C 76 BO 907 120 BOX 54B 173
BO 433 78 BO 908 124 BOX 54C 173
BO 434 82 BO 909 120 BOX 54E 177
BO 435 78 BO 910 124 BOX 54F 177
4

Type Page Type Page Type Page
BOX 54S 181 BU 4080 255 BUW 34 359
BOX 85 185 BU 426 267 BUW35 359
BOX 85A 185 BU 426A 267 BUW36 359
BOX 85B 185 BU 801 270 BUW42 364
BOX 85C 185 BU 806 275 BUW44 366
BOX 86 190 BU 807 275 BUW45 366
BOX 86A 190 BU 810 281 BUW46 366
BOX 86B 190 BU 910 285 BUX 10 371
BOX 86C 190 BU 911 285 BUX 11 377
BOX 87 195 BU 912 285 BUX 11 N 383
BOX 87A 195 BU 920P 290 BUX 12 389
BOX 87B 195 BU 921P 290 BUX 13 395
BOX 87C 195 BU 922P 290 BUX 14 397
BOX 88 200 BU 930 293 BUX 20 399
BOX 88A 200 BU 930P 299 BUX 21 405
BOX 88B 200 BU 931 293 BUX 22 411
BOX 88C 200 BU 931 P 299 BUX 40 417
BOY 57 205 BU 932 293 BUX 41 423
BOY 58 205 BU 932P 299 BUX 41N 429
BOY 90 208 BUR 50 301 BUX 42 435
BOY 91 208 BUR 51 307 BUX 43 441
BOY 92 208 BUR 52 313 BUX 44 443
BFX 34 210 BUT13 319 BUX46 445
BSS 44 214 BUT 13P 327 BUX 47 447
BOW67 218 BUV 20 335 BUX 48 449
BOW 68 218 BUV 21 335 BUX 48A 449
BU 125 222 BUV 22 335 BUX 48B 449
BU 125S 226 BUV 23 338 BUX 48C 449
BU 325 230 BUV 24 338 BUX 80 459
BU 326 235 BUV 25 338 BUX 84 464
BU 326A 240 BUV 46 341 BUY 18S 466
BU 326S 245 BUV 47 343 BUY 47 469
BU 406 249 BUV 47A 343 BUY 48 469
BU 4060 255 BUV 48 346 BUY 49P 474
BU 406H 249 BUV 48A 346 BUY 49S 476
BU 407 261 BUW 11 348 BUY 68 480
BU 4070 255 BUW 12 351 BUY 69A 484
BU 407H 261 BUW 12A 351 BUY 69B 484
BU 408 249 BUW32 354 BUY 69C 484
5

ALPHANUMERICAL INDEX (continued)
Type Page Type Page Type Page
044 Cl 487 MJ 10004P 501 TIP 32A 530
044C2 487 MJ 10005 501 TIP 328 530
044C3 487 MJ 10005P 501 TIP 32C 530
044C4 487 MJ 11011 504 TIP 41 532
044 C5 487 MJ 11012 504 TIP41A 532
044C6 487 MJ 11013 504 TIP 418 532
044 C7 487 MJ 11014 504 TIP 41C 532
044 C8 487 MJ 11015 504 TIP42 534
044 C9 487 MJ 11016 504 TIP42A 534
044 Cl0 487 MJE 340 506 TIP 428 534
044 Cll 487 MJE 350 506 TIP 42C 534
044 C12 487 MJE 700 508 TIP47 536
044 Hl 489 MJE 701 508 TIP48 536
044 H2 489 MJE 702 508 TIP49 536
044 H4 489 MJE 703 508 TIP 50 536
044 H5 489 MJE 800 508 TIP 51 542
044 H7 489 MJE 801 508 TIP 52 542
044 H8 489 MJE 802 508 TIP 53 542
044 Hl0 489 MJE 803 508 TIP 54 542
044 Hll 489 MJE 13002 511 TIP 100 545
04401 491 MJE 13003 511 TIP 101 545
04403 491 MJE 13004 517 TIP 102 545
04405 491 MJE 13005 517 TIP 105 547
MJ 900 493 MJE 13006 522 TIP 106 547
MJ 901 493 MJE 13007 522 TIP 107 547
MJ 1000 493 MJE 13007A 522 TIP 110 549
MJ 1001 493 TIP 29 524 TI P 111 549
MJ 2500 495 TIP 29A 524 TlPl12 549
MJ 2501 495 TIP 298 524 TIP 115 551
MJ 2955 497 TIP 29C 524 TIP 116 551
MJ 3000 495 TIP30 526 TIP 117 551
MJ 3001 495 TIP 30A 526 TIP 120 553
MJ 4030 499 TIP 308 526 TIP 121 553
MJ 4031 499 TIP 30C 526 TIP 122 553
MJ 4032 499 TIP 31 528 TIP 125 558
MJ 4033 499 TIP 31A 528 TIP 126 558
MJ 4034 499 TIP318 528 TIP 127 558
MJ 4035 499 TIP 31C 528 TIP 130 563
MJ 10004 501 TIP 32 530 TIP 131 563
6

Type Page Type Page Type Page
TIP 132 563 2N 5336 615 2N 6123 675
TIP 135 565 2N 5337 615 2N 6124 679
TIP 136 565 2N 5338 615 2N 6125 679
TIP 137 565 2N 5339 615 2N 6126 679
TIP 140 567 2N 5415 620 2N 6282 683
TIP 141 567 2N 5416 620 2N 6283 683
TIP 142 567 2N 5671 624 2N 6284 683
TIP 145 567 2N 5672 624 2N 6285 683
TIP 146 567 2N 5679 628 2N 6286 683
TIP 147 567 2N 5680 628 2N 6287 683
2N 3055E 572 2N 5681 630 2N 6288 673
2N 3439 576 2N 5682 630 2N 6290 673
2N 3440 576 2N 5875 632 2N 6292 673
2N 3713 580 2N 5876 632 2N 6354 685
2N 3714 580 2N 5877 637 2N 6386 690
2N 3715 580 2N 5878 637 2N 6387 690
2N 3716 580 2N 6032 642 2N 6388 690
2N 3789 584 2N 6033 642 2N 6486 693
2N 3790 584 2N 6034 647 2N 6487 693
2N 3791 584 2N 6035 647 2N 6488 693
2N 3792 584 2N 6036 647 2N 6489 696
2N 4234 588 2N 6037 651 2N 6490 696
2N 4235 588 2N 6038 651 2N 6491 696
2N 4236 588 2N 6039 651 2N 6496 595
2N 4895 591 2N 6050 655 2N 6544 699
2N 4896 591 2N 6051 655 2N 6545 699
2N 4897 591 2N 6052 655 2N 6546 702
2N 5038 595 2N 6053 660 2N 6547 702
2N 5039 595 2N 6054 660 2N 6702 705
2N 5151 601 2N 6055 664
2N 5152 604 2N 6056 664
2N 5153 601 2N 6057 668
2N 5154 604 2N 6058 668
2N 5190 607 2N 6059 668
2N 5191 607 2N 6107 673
2N 5192 607 2N 6109 673
2N 5193 611 2N 6111 673
2N 5194 611 2N 6121 675
2N 5195 611 2N 6122 675
7
--- ... ~ ---
---"-- --- ,--,--.

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
SGS power transistors cover a wide range of technologies optimized for almost every application.
These include epitaxial base (medium voltage, high ruggedness, general purpose) epitaxial planar (high
speed with good voltage capability) multiepitaxial planar (high current switching) and multiepitaxial
mesa (high voltage-high power switching).
A wide choice of packages are available.
In order to be easy to use following power transistor selector guides cover only a part of the complete
range. Other voltage ratings and gain selections shown on the full data sheets are equally available.
Many older devices which are less popular for new designs are also in production. Your nearest SGS sales
office or distributor has full details available on request.
8

EPITAXIAL BASE -
ICM 1 to 15A; VCEO 22 to 180V
NPN and PNP types
(perfect complementary pairs)
Medium V CEO range (22 to 100V)
Medium switching speed
Medium fT (2 to 20 MHz)
High ruggedness
Monolithic Darlington capability
THERMAL
DXID£
I
P-VA
X
N'
EPITAXIAL BASE
IC VCSO V CEO Ptot
(A) (V) (V) (W)
Package
NPN
PNP
hFE
min
@
ICNCE
(AN)
VCEsat
max (V)
@
Ic/ls
(AlmA)
1 40 40 30 TO-220
1 60 60 30 TO-220
1 80 80 30 TO-220
1 100 100 30 TO-220
TlP29
TlP29A
TlP29B
TIP29C
TlP30
TIP30A
TlP30B
TlP30C
15 1.0/4
15 1.0/4
15 1.0/4
15 1.0/4
0.70 1.0/125
0.70 1.0/125
0.70 1.0/125
0.70 1.0/125
2 45 45 25 TO-126
2 55 45 30 TO-220
2 60 60 25 TO-126
2 70 60 30 TO-220
2 100 80 25 TO-126
2 90 80 30 TO-220
2 115 100 30 TO-220
B0233
B0239
B0235
B0239A
B0237
B0239B
B0239C
B0234
B0240
B0236
B0240A
B0238
B0240B
B0240C
25 1.0/2
15 1.0/4
25 1.0/2
15 1.0/4
25 1.0/2
15 1.0/4
15 1.0/4
0.60 1.0/1 00
0.70 1.0/200
0.60 1.0/100
0.70 1.0/200
0.60 1.0/100
0.70 1.0/200
0.70 1.0/200
2 60 60 50 TO-220
2 80 80 50 TO-220
2 100 100 50 TO-220
TIP110
TlP111
TIP112
TlP115
TIP116
T1Pl17
1000 1.0/4
1000 1.0/4
1000 1.0/4
2.50 2.0/8
2.50 2.0/8
2.50 2.0/8
3 45 45 30 TO-126
3 60 60 30 TO-126
3 80 80 30. TO-126
B0175
B0177
B0179
B0176
B0178
B0180
15 1.0/2
15 1.0/2
15 1.0/2
0.80 1.0/100
0.80 1.0/100
0.80 1.0/100
3 55 45 40 TO-220
3 40 40 40 TO-220
3 70 60 40 TO-220
3 60 60 40 TO-220
3 90 80 40 TO-220
3 80 80 40 TO-220
3 115 100 40 TO-220
3 100 100 40 TO-220
B0241
TlP31
B0241A
TIP31A
B0241B
TlP31B
B0241C
TlP31C
B0242
TlP32
B0242A
TIP32A
B0242B
TlP32B
B0242C
TIP32C
25 1.0/4
25 1.0/4
25 1.0/4
25 1.0/4
25 1.0/4
25 1.0/4
25 1.0/4
25 1.0/4
1.20 3.0/600
1.20 3.0/375
1.20 3.0/600
1.20 3.0/375
1.20 3.0/600
1.20 3.0/375
1.20 3.0/600
1.20 3.0/375
* Darlington types.
9

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)
EPITAXIAL BASE (continued)
Ic VCBO VCEO Ptot
(A) (V) (V) (W)
@
@
Package NPN PNP hFE ICNCE VCEsat Ic/lB
min (AN) max (V) (AlmA)
4 40 40 40 TO-126 2N5190 2N5193 25 1.50/2 0.60 1.50/150
4 60 60 • 40 TO,,126 .BD677.
760 .. 1.£iO/3 .. 2.50 .1;6018.
'.'
4 '. SO
:g:~~./
80 40 1'6::12:6. .BQ679 760 ·1.50l3 iso. 1.:50/8
4 80 80 40 TO-126 2N5192 2N5195 20 1.50/2 0.60 1.50/150
.4 '100 100. .40 .. ·td~l26 .' B068t "'lm68~ .. 750 l,50i3. ;Uip ... 1.50f6 .....
4 22 22 36 TO-126 B0433 B0434 50 2.0/1 0.50 2.0/200
4 32 32 36 TO-126 B0435 B0436 50 2.0/1 0.50 2.0/200
4 45 45 36 TO-126 B0437 B0438 40 2.0/1 0.60 2.0/200
4 . ' 45 4£i 40 1:0-126 . aD61~A. .800161:\ 150 2.013 . 2;80· 2.0/8.
4 45 45 50 TO-220 B0533 B0534 25 2.0/2 0.80 2.0/200
4 60 60 36 TO-126 B0439 B0440 25 2.0/1 0.80 2.0/200
4 •' 60. 60· . ·40 TOA?6 . ~P677A. .BOO78,o, ".750 ".
;l.G/? ... ~.8P· •• ·...... 2;9IS
4 60 60 50 TO-220 B0535 B0536 25 2.0/2 0.80 2.0/200
4 80 80 36 TO-126 B0441 B0442 15 2.0/1 0.80 2.0/200
4. 80 80· ..... 40 ·TO~12~. B0619A. ·.~068QA >7.60. 2:0/3 . .2:.80 ',';2.0/8
4 80 80 50 TO-2:20 B0537 B0538 15 2.0/2 0.80 2.0/200
~. Hm 180 10 TO-:W·· SIlW9.1 'SPllV!}~ lQQO
'.
2.0/5·> 2:0 :toA~.> ...
. 560
.. ' 5< 80
510.0
.... ·.f.· "
60 >66. rb~220·rIP1*l)np125.1000 3.9/3 ... !.·
•.• ,:OO .•·............ a.,Qni .
80.65'. • TO-2Z0.· TjP121 ·TIPl26· 1000 3013 '" ······3 0J12
1001·~6 .... TO~220 ·.1,P1~2 "I~IPl2'i .··.l(joo> ·3:0/3 · .2.0' ... 3:0"2, .. ·
'1 .. ...... . ... I·. . ..•. ." " .•.. '.'
.•••. 4.5 45 '50 T0~22Q l!lQW23 ~~1I¥2f1 760. .2.01:$. • .. 2~O ..... 2,0/8
u 606050 to..,220 BDW1Z3A BDW24A .750"2.0/$ :to .. ' '2.0;8
'6>8080 .50.rO;';22D·BIiIW23B·.BoW24B7S0 12;0/320 .... ····2;Q/8 ......•
6 .100 IO.OS600:tOj220BoVll23eB~W24C •.. 7502:0/3>2:02.°./8 ...• ..
6·' "140 14Q' IO:;220B~)(.5iE~D~54E 500···· 2,P/Ei .·.2:q 2 . .O!lO.'
. 6150 .160 ••... 15 ..•. i()::3~.BOX,63SBDX54S500 2.016.2.0. ··~.o!B . ....
6 160 16060TP~2~QBO)(S3..BDX.54F5002;015 4,0 ........ 1W/Hf
6 45 45 65 TO-220 B0243 B0244
6 40 40 65 TO-220 TIP41 TIP42
6 60 60 65 TO-220 B0243A B0244A
6 60 60 65 TO-220 TlP41A TIP42A
6 80 80 65 TO-220 B0243B B0244B
6 80 80 65 TO-220 TlP41B TIP42B
6 100 100 65 TO-220 B0243C B0244C
6 100 100 65 TO-220 TlP41C TIP42C
15 3.0/4
15 3.0/4
15 3.0/4
15 3.0/4
15 3.0/4
15 3.0/4
15 3.0/4
15 3.0/4
1.50
1.50
1.50
1.50
1.50
1.50
1.50
1.50
6.0/1000
6.0/600
6.0/1000
6.0/600
6.0/1000
6.0/600
6.0/1000
6.0/600
II-
Darlington types.
10

EPITAXIAL BASE (continued)
Ic V CBO V CEO Ptot
(A) (V) (V) (W)
Package
NPN
PNP
@
hFE
min
ICNCE
(AN)
@
VCEsat
max (V)
Ic/lB
(AlmA)
7 80 70 40 TO-220 2N6292
7 40 30 40 TO-220 2N6288
2N6107 30
2N6111 30
4.0/2 1.0
4.0/3 1.0
2.0/200
3.0/300
40 40 e5 2N6386
45 45 BOX53
60 60 BOX53A
60 MJ1000
BOX53B
MJ1001
BOX53C
BOX54
BDX54A
MJ90()
BDX54B
MJ901
BOX54C
3.0/6
3.0112
3.0/12
3.0/12
3.6/12
3.0/12
3.0[12
111"130
TJP131
TIP132
TIP135
TIP136
TIP13'7
4;0/16
4.0/16
4.0/16
BOX8S
BOX85A
BOXjJ5B
BOX85C
BOX86
BOX86A
B"X8~B
B"X86C
4.0(16
4.0/16
4.0/16
4.0l16
2N6387
MJ3000
TO-3 2N5877
TO-3 2N3715
tO~220 2N6388
TO-3 IiIIJ30.01
10 80 80 150 TO-3 2N5878
10 100 80 150 TO-3 2N3716
1000
MJ2500 1000
2N5875 20
2N3791 30
1000
MJ2501 1000
2N5876 20
2N3792 30
4.0/4 1.0
3.0/2 0.80
6.0/10
5.0/20
5.0/500
5.0/500
5.0110
5.0/20
5.0/500
5.0/500
12 45 45 75 TO-220 B0705
12 60 60 75 TO~220 B0707
12 80 80 75 TO-220 80709
12 100 100 75 TO-220 B0711
B0706 20
B0708 15
B0710 15
B0712 15
4.0/4 1.0
4.0/4 1.0
4.0/4 1.0
4.0/4 1.0
4.0/400
4.0/400
4.0/400
4.0/400
* Darlington types.
11

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)
EPITAXIAL BASE (continued)
IC VCSO V CEO Ptot
(A) (V) (V) (W)
Package NPN PNP
@
hFE Ic/VCE VCEsat Ic/Is
min (AN) max (V) (A/mA)
@
15 100 60 115 TO-3 2N3055E MJ2955 20 4.0/4 1.1 4.0/400
15 45 45 90 TO-220 B0905 B0906 15 5.0/4 1.0 5.0/500
15 45 45 125 TO-3 BOW51 BOW52 20 5.0/4 1.0 5.0/500
15 60 60 90 TO-220 B0907 B0908 15 5.0/4 1.0 5.0/500
15 60 60 125 TO-3 BOW51A BOW52A 20 5.0/4 1.0 5.0/500
15 80 80 90 TO-220 B0909 B0910 15 5.0/4 1.0 5.0/500
15 80 80 125 TO-3 BOW51B BOW52B 20 5.0/4 1.0 5.0/500
15 100 100 90 TO-220 B0911 B0912 15 5.0/4 1.0 5.0/500
15 100 100 125 TO-3 BOW51C BOW52C 20 5.0/4 1.0 5.0/500
* Darlington types.
12

---- -~".---~
EPITAXIAL PLANAR -
NPN and PNP types
Good voltage capability (V CES up to 400V)
Low saturation voltage
Low leakage
Very high fT (up to 100 MHz)
Very high speed
Moderate ruggedness
Total base-collector passivation
ICM 0.5 to 2A; VCEO 45 to 350V
EPITAXIAL PLANAR
Ic V CBO V CEO Ptot
(A) (VI (V) (WI
Package NPN PNP hFE IcIVcE VCEsat lellB
min (AN) max (V) (AlmA)
0.5 300 300 20 TO-126 MJE340 MJE350 30 0.05/10
1 45 45 12 TO-126 B0135 B0136 40 0.15/2 0.5 0.50/50
1 60 60 12 TO-126 B0137 B0138 40 0.15/2 0.5 0.50/50
1 80 80 12 TO-126 B0139 B0140 40 0.15/2 0.5 0.50/50
1 120 120 10 TO-39 2N5682 2N5680 40 0.25/2 1.0 0.50/50
200 200 10 TO-39 2N5415 30 0.05/10 2.5 0.05/5
300 250 10 TO-39 2N3440 40 0.02/10 0.5 0.05/4
350 300 10 TO-39 2N5416 30 0.05/10 2.5 0.05/5
450 350 10 TO-39 2N3439 40 0.02/10 0.5 0.05/4
1.5 120 120 5 TO-39 BSW67 15 1.0/5 1.0 1.0/150
1.5 150 150 5 TO-39 BSW68 15 1.0/5 1.0 1.0/150
2 50 45 25 TO-126 B0375 B0376 40 0.15/2 1.0 1.0/100
2 75 60 25 TO-126 B0377 B0378 40 0.15/2 1.0 1.0/100
2 100 80 25 TO-126 B0379 B0380 40 0.15/2 1.0 1.0/100
3 250 150 10 TO-39 BU125S 30 0.25/3 1.5 0.50/50
3 200 200 25 TO-126 BU325 30 0.50/5 1.5 0.50/50
3 250 200 10 TO-39 BUY49S 40 0.50/5 0.2 0.50/50
3 40 40 6 TO-39 2N4234 30 0.25/1 0.6 1.0/125
5 100 60 5 TO-39 BFX34 40 2.0/2 1.0 5.0/500
5 65 60 5 TO-39 BSS44 40 2.0/2 1.0 5.0/500
5 150 80 7 TO-39 2N4897 40 2.0/2 1.0 5.0/500
5 100 80 11.7 TO-39 2N5154 2N5153 70 2.50/5 0.7 2.50/250
5 100 100 6 TO-39 2N5338 20 5.0/2 1.2 5.0/500
5 100 100 6 TO-39 2N5339 40 5.0/2 1.2 5.0/500
7 130 60 10 TO-39 BU125 15 5.0/2 1.0 5.0/500
7 100 60 10 TO-39 BUY68 40 1.0/1 1.0 5.0/500
7 150 120 10 TO-39 BUY47 15 5.0/5 1.0 5.0/500
7 330 60 TO-220 BU4070 8 5.0/1 1.0 5.0/650
7 330 150 60 TO-220 BU407 10 5.0/1 1.0 5.0/500
7 200 170 10 TO-39 BUY48 15 5.0/5 1.0 5.0/500
7 400 60 TO-220 BU4060 8 5.0/1 1.0 5.0/650
7 400 200 60 TO-220 BU406 10 5.0/1 1.0 5.0/500
7 400 200 50 TO-3 BUY18S 20 1.0/5 1.0 5.0/500
* Darlington types.
13

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)
MUL TIEPITAXIAL PLANAR -
Ic range up to 70A
Good hFE linearity
Very low leakage
High switching speed
High E'/b capability
Total base-collector passivation
ICM 1 to 70A; VCEO 75 to 450V
MULTIEPITAXIAL PLANAR
IC Vcso V CEO Ptot
(A) (V) (V) (W)
Packa~e
NPN hFE IC/VCE VCE,at
min (AN) max (V)
IC/IS
(A/mA)
350
400
450
TO-220
TO-220
TO-220
26
10
10
10
12
100
120
150
300
80
100
120
250
60
60
140
120
TO-3
TO-3
TO-3
TO-3
BOY91 20 10.0/5 0.5
BOY90 20 10.0/5 0.5
2N6354 20 5.0/2 0.5
BUX42 8 6.0/4 1.2
5.0/500
5.0/500
5.0/500
4.0/400
15
18
15
150
220
250
110
160
200
140
120
120
TO-3
TO-3
TO-3
2N6496 12 8.0/2 1.0
BUX41N 8 12.0/4 1.2
BUX41 8 8.0/4 1.2
8.0/800
8.0/800
5.0/500
20
20
20
20
20
20
120
150
160
220
250
300
75
90
125
160
200
250
140
140
120
150
150
150
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
2N5039 20 10.0/5 1.0
2N5038 20 12.0/5 1.0
BUX40 8 15.0/4 1.2
BUXllN 10 15.0/4 0.6
BUXll 10 12.0/4 0.6
BUX12 10 10.0/4 1.0
10.0/1000
12.0/1200
10.0/1000
8.0/800
6.0/600
5.0/500
25
25
25
120
160
160
80
125
125
175
175
150
TO-3
TO-3
TO-3
BOY57 20 10.0/4 1.4
BOY58 20 10.0/4 1.4
BUX10 10 20.0/4 0.6
10.0/1000
10.0/1000
10.0/1000
'* Darlington types.
14

MU'L TIEPITAXIAL PLANAR (continued)
@
@
Ic V CBO VCEO P tot Package NPN hFE IcNcE V CEsat Ic/IB
(A) '(V) (V) (W)
min (AN) max (V) (A/rnA)
30 120 90 140 TO-3 2N5671 20 20.0/5 0.75 15.0/1200
30 150 120 140 TO-3 2N5672 20 20.0/5 0.75 15.0/1200
40 150 120 140 TO-3 2N6033 10 40.0/2 1.0 40.0/4000
40 250 200 250 TO-3 BUV21 10 25.0/4 0.6 12.0/1200
40 250 200 350 TO-3 BUX21 10 25.0/4 0.6 12.0/1200
40 300 250 250 TO-3 BUV22 10 20.0/4 1.0 10.0/1000
40 300 250 350 TO-3 BUX22 10 20.0/4 1.0 10.0/1000
50 120 90 140 TO-3 2N6032 10 50.0/2.6 1.3 50.0/5000
50 160 125 250 TO-3 BUV20 10 50.0/4 0.6 25.0/2500
50 160 125 350 TO-3 BUX20 10 50.0/4 0.6 25.0/2500
60 300 200 350 TO-3 BUR51 15 50.0/4 1.0 30.0/2000
60 350 250 350 i TO-3 BUR52 15 40.0/4 1.8 25.0/2000
. 70 200 125 350 TO-3 BUR50 15 50.0/4 1.0 35.0/2000
15

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)
MUL TlEPITAXIAL MESA -
NPN and PNP types
High voltage (V CBO up to 1000V)
High power
Very good ISlb and ES/b performance
High switching speed
High fT (20 MHz)
Good stability
ICM 4 to 30A; V CEO 325 to 600V
GLASS Al THERMAL P-VAPOX
I OXIDE I
I
MUL TIEPITAXIAL MESA
Ic vcso V CEO Ptot
(A) (V) (V) (W)
Package
NPN
@
PNP hFE IcNcE VCEsat Ic/Is
min (AN) max(V) (A/rnA)
@
4 700 400 75 TO-220
6 800 375 75 TO-3
6 800 375 113 50T-93
6 800 400 60 0 TO-3
6 900 400 75 TO-3
6 900 400 113 50T-93
8 450 400 120 TO-3
8
8
700
850
400
400
80
125
TO-220
TO-3
8.5 850 400 107 TO-3
10 400 325 120 TO-3
10 800 325 100 TO-3
10 500 400 125 TO-3
10 800 400 125 TO-3
10
10
450
800
400
400
150
100
TO-3
TO-3
10 1000 400 100 TO-3
10 900 450 125 TO··3
15 400 325 150 TO-3
16 400 350 150 TO:--$.
16 450 400 150 TO-3
15 500 400 175 TO-3
15 800 400 175 TO-3
15 8501450 400 175 TO-3
15 850 400 175 TO-3
15. $00 450 160 TO-3
15 900 450 175 TO-3
15 1000 450 175 TO-3
15 500 500 350 TO-3
15 1000 600 175 TO-3
20 450 400 350 TO-3
30 400 325 250 TO-3
30 400 325 350 TO-3
20 450 400 250 TO-3
MJE13005
BU326
BU426
BU326S
BU326A
BU426A
BUX44
MJE13007
2N6545
BUX47
BUX43
BUY69B
BUW34
BUW35
BUX14
BUX80
BUY69A
BUW36
BUX13
BU930
BU931
BUW44
BUW45
BUX48
2N6547
8U932.·
BUW46
BUX48A
BUX25
BUX48B
BUX24
BUV23
BUX23
BUV24
* Darlmgton types, Multlepltaxlal planar _ TYPical.
16
10 1.0/5 0.6 2.0/500
25.
25,
1.00/5
0.60/5
1.5
1.5
2.50/500
2.50/500
3.5 4.0/5 1.5 2.50/500
25. 1.00/5 1.5 2.50/500
25. 0.60/5 1.5 2.50/500
8 4.0/4 1.5 4.0/800
8 2.0/5 1.5 5.0/1000
4 8.0/5 1.5 5.0/1000
3 9.0/3 1.5 6.0/1200
8 5.0/4 2.0 5.0/1000
15 2.50/10 3.3 8.0/2500
BUW32 15 1.0/5 1.5 5.0/1000
15 1.0/5 1.5 5.0/1000
8
5
6.0/4
5.0/1.5
1.6
1.5
6.0/1200
5.0/1000
15 2.50/10 3.3 8.0/2500
15 1.0/5 1.5 5.0/1000
8 8.0/4 1.5 8.0/1600
4.0 10.0/1.8 1,8 8.0/100
BUW42
40 10.0/1.8. 1.8 .8.0/100
6 6.0/1.5 3.0 10.0/2000
7 7.0/1.5 1.5 10.0/2000
5 15.0/3 1.5 10.0/2000
5 15.0/5 1.5 10.0/2000
40 . 10,0/1.8 1;8 .8:0/150.
7 7.0/1.5 1.5 10.0/2000
5
8
12.0/3
8.0/4
1.5
1.0
8.0/1600
8.0/1600
15 1.0/10 2.0 8.0/2500
8 12.0/4 1.0 12.0/2400
8 16.0/4 1.0 16.0/3200
8 16.0/4 1.0 16.0/3200
8 12.0/4 1.0 12.0/2400

Recent product introductions
·
EPITAXIAL BASE
@
@
Ic VCSO VCEO Ptot Package NPN PNP
(A) (V) (V) (W) hFE ICNCE VCEsat Ic/Is
min. (AN) max. (V) (A/mA)
12 60 60 126 SOT~93 POV65 BOV64 1000 6.0/4 2.0 5.()/20
12 80 SO 125 SOT-93 BOV65A BOV64A 1000 '5.0/4 2.0 5.0/20
12 100 100 125 SOT~93 BOV65B BOV$4B 1000 5:0/4 2.0 5 .. a/20
· Hi 60 6,0 150 TO':'3 MJ4030 MJ4033 1000 10/3 4.0 ,.·19180
t6 SO 80 150 TO""3 MJ4031 MJ4034 1000 1013 4;0 16/80
16 100 HlO 150 TO-3 MJ4032 I\IIJ4035 1000 10/3 4.0 16/80
30 60 60 200 'TO~3 MJ11012 MJ110n., .200 , '30/5 4.0 30(300
• '30 1 90 .90 200 TO~3 MJ'J1014 MJ11Q~~ '. 200 30/5 A;O ..... 30/300
• 30;; '·.l~O 120 laO :TO~( ·MJ1tQ16 MJ:t1Ofii '200 ... 30/6 A,Or," : 39"3OQ"
10 "\lO', Sf) 125. 'S6!~93 11P140 .TIP145· ,'500 1014' ,(to ',10f4Q .
· 1'0 ~ 80 12$ .$Ot:"~3. T\P141 tIP146.OO0· 10/4' , ..·3.0. 10l4()
· '10 " laO 100: 125 ;'. So;r':'9:l.' ,"P142 ., TtP1 .•' ••.,......• 500 ", 10/(

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)
MUL TIEPITAXIAL PLANAR (continued)
Package
NPN
4 TO-220 044C1 1.0/1 1 oil
4 TO-220 044C4 1.0/1 1/100
4 TO-220 044C7 1.0/1 1/100
4 TO-220 044C1 0 1.0/1 1/100
10 TO-220 044H1 4.0/1 8/800
10 TO-220 044H4 4.0/1 8/800
10 TO-220 044H7 4.0/1 8/800
10 TO-220 044H10 4.0/1 8/800
4 TO-220 04401 2.0/10 2/200
4 TO-220 04403 2.0/10 2/200
4 TO-220 04405 2.0/10 2/200
1 TO-220 TlP50 1 0 1
* Darlington types
MUL TIEPITAXIAL MESA
IC VCSO vCn°
Ptot
(A) (V) (V (W)
@
@
Package NPN hFE IcNcE VCEsat IclIs
(min.) (AN) max. (V) (AlmA)
5 850 400 850 TO-220 BUV46 5.0 3.5/5 1.5 2.5/500
9 850 400 120 SOT-93 BUV47 3.0 8.0/3 1.5 5.0/1000
9 1000 450 120 SOT-93 BUV47A 3.0 8.0/3 1.5 5.0/1000
5 850 400 100 SOT-93 BUW11 5.0 3.0/1.5 1.5 3.0/600
8 850 400 125 SOT-93 BUW12 5.0 6.0/1.5 1.5 6.0/1200
8 1000 450 125 SOT-93 BUW12A 5.0 6.0/1.5 1.5 6.0/1200
15 1000 700 175 TO-3 BUX48C 2.5 10/3 1.5 6.0/1500
2 800 400 40 TO-220 BUX84 50(") 0.1/5 1.1 1.0/200
15 850 400 150 SOT-93 BUV48 5.0 15/5 1.5 10/2000
15 1000 450 150 SOT-93 BUV48A 5.0 12/5 1.5 8.0/1600
50 160 125 250 TO-3 BUV20 10 50/4 1.2 50/5000
40 250 200 250 TO-3 BUV21 10 25/4 1.5 25/3000
40 300 250 250 TO-3 BUV22 10 20/4 1.5 20/2500
30 400 325 250 TO-3 BUV23 8.0 16/4 1.0 16/3200
20 450 400 250 TO-3 BUV24 8.0 12/4 1.0 12/2400
15 500 500 250 TO-3 BUV25 8.0 8.0/4 1.0 8.0/1600
3 350 250 100 SOT-93 TlP51 10 3.0110 1.5 3.0/600
3 400 300 100 SOT-93 TlP52 10 3.0/10 1.5 3.0/600
3 450 350 100 SOT-93 TIP53 10 3.0/10 1.5 3.0/600
3 500 400 100 SOT-93 TlP54 10 3.0/10 1.5 3.0/600
(") TYPlca'
18

CROSS REFERENCE GUIDE
TYPE
8GS-ATES PAGE TYPE
SGS-ATES PAGE TYPE
SGS-ATES PAGE
NEAREST NEAREST NEAREST
BO 135 BO 135 BO 205 BO 905 120 BO 243 BO 243 74
BO 136 80 136 BO 206 B0906 124 BO 243A 80 243A 74
BO 137 BO 137 * BD 207 B0901 120 BO 243B B02438 74
BO 138 BO 138 * BO 208 SO 908 124 BD 243C 80243C 74
BD 139 BO 139 BD 220 130537 94 SO 244 80244 76
SO 140 BO 140 BO 221 130 533 94 BO 244A 80 244A 76
BD 165 B0437 78 BD 222 SO.535 94 SO 244B BO 2448 76
SO 166 B0438 82 SO 223 B0538 98 BO 244C BO 244C 76
SO 167 B0439 86 SO 224 B0534 98 SO 245 BO.705 110
SO 168 SO 440 90 BD 225 SO 536 98 SO 245A 8·0707 110
SO 169 80441 86 SO 226 B0375 * SO 245B 80709 110
BO 170 SO 442 90 SO 227 aD 376 * SO 245C .. aD 711 110
SO 175 SO 175 48 BO 228 80377 BD 246 B0106 115
BO 176 80176 52 BD 229 B0378 BD 246A Bp79~ 115
BD 177 130 177 48 BD 230 BO 379 * BD 246B B0710 115
BO 178 BD.178 52 SO 231 BO 380 SO 246C B0712 115
BO 179 BOti'9 48 BD 233 B0233 56 BO 253 I3UW24 *
BD 180 BOl80 52 BD 234 'sO 234 60 BD 253A l3u VV 25 *
BD 181 BO 181 SO 235 B023(; 56 SO 253B BU136 *
SO 182 B0182 SO 236 S0236 60 SO 253C BU32~A 240
SO 183 so 183' SO 238 Bona 60 SO 262 B0678 106
SO 185 SO 435 78 SO 239 B0239 64 SO 262A 80680 106
SO 186 B0436 82 SO 239A 60239A 64 SO 262S BOi~~2 106
SO 187 SO 437 78 BD 239B 80 239B 64 BD 263 6.0677 102
BO 188 B0438 82 BO 239C Be 239C 64 BD 263A 80§79 102
BO 189 BDA39 86 BO 240 ···80240 66 BO 263B .. B06~1 102
BO 190 BD440 90 BD 240A BD240A 66 BO 264 Bb1J\l:z4A
BO 195 80533 94 BD 240B 6qf4()~.· 66 BO 264A BpVV~4a *
SO 196 SO 534 98 BD 240C SO 240C 66 BD 265 I3Pvv 23A *
BO 197 B0535 94 BD 241 130241 70 BO 265A BOW23B
',:,.:;- .. "
SO 198 B0536 98 SO 241A 60 241A 70 SO 266 BIj~(;~.~ 173
SO 199 80537 94 SO 241S 81j24J8 70 SO 266A ···BPX&4B 173
BO 200 60··038 98 SO 241C .13.P·2i41C 70 BD 266S 8 173
SO 201 ~b105 110 SO 242 8P~42 72 SO 267 6 161
SO 202 I3P?~~···· 115 SO 242A 8P~42.A 72 SO 267A is 161
BO 203 60707 110 SO 242S $11J;~4.i~ 72 SO 267B 161
SO 204 sO 708 115 SO 242C ·130242C· 72 SO 268 156
Data sheet available on request
19

CROSS REFERENCE GUIDE (continued)
TYPE
'"llEAfti;$'!I':1 PAGE TYPE
SO 271
SO 272
SO 273
SO 274
SO 275
SO 276
SO 277
SO 278
SO 301
SO 302
SO 303
SO 304
SO 311
SO 312
SO 313
SO 314
SO 331
SO 332
SO 333
SO 334
SO 335
SO 336
SO 361
SO 361 A ['::,1
78 BD 544
78
82 BD 544S
82 SO 561
BD 562
BD 575
SO 576
SO 577
BD 578
BD 579
78 BD 580
82 BD 585
20
78 BD 586
82 SO 587
78 SO 588
82 BD 589
86 BD 590
90 SO 595
86 BO 596
90 BO 597
94 SO 598
98 BD 599
94 SO 600
98 SO 601
94 BD 602
98 BO 605
70 SO 606
70 SO 607
70 SO 608
70 BO 609
72 BO 610
72 SO 633
72 BO 634
72 SO 635
120 SO 636
120 BO 637
120 SO 638
124 S0643
124 BO 644
124 B0645
78 BO 646
82 SO 647
94 SO 648
98 SO 649
94 SO 650
98 SO 663
94 SO 664
98
94
98
94
98
94
98
110
115
110
115
110
115
110
115
120
124
120
124
120
124
94
98
94
98
94
98
161
173
161
173
161
173
161
173
102
106

TYPE
SGS-ATES PAGE
NEAREST
TYPE
SGS-ATJ::S PAGE
NEAREST
TYPE
SGS;';ATl:S PAGE
NE.AREST
BD 677 SO 677 102 BD 796 SO 706 115 BD943 .BO 5~3 94
BD 677A SO 677A 102 BD 797 SO 707 110 BD 944 BO q34 98
BD 678 BO 678 106 BD 798 SO 708 115 BD 945 80535 94
BD 678A BD 678A 106 BD 799 SO 709 110 BD946 BO 534 98
BD 679 BD679 102 BD 800 SO 710 115 BD 947 SO 533 94
BD 679A B0679A 102 BD 801 . SO 711 110 BD 948 80534 98
BD 680 BD 680 106 8D802 SD712 115 BD 949 SO 241A 70
B D 680A BO 6S0A 106 BD805 8D905 120 BD 950 So 242A 72
BD 681 B0681 102 BD 806 80.906 124 BD951
70
BD 68280682 106 BD 807
120 BD 952
72
BD 695A
BD 808
124 BD 953
70
BD 696A
BD 809
120 BD 954
72
BD 697
BD 810
124 BDT 62
BD 697A .
BD 698
BD 895
BD 896
151
156
BD 698A ..
173 BD 897
151
BD 699
161 BD 898
151
BD 699A
161 BD 899
151
BD 700
173 BD 900
156 BDT 91
BD 700A
BD 701
BD 702
BD 705
BD 706
BD 707
BD 708
BD 709
BD 710
BD 711
173 BD 901
BD 902
BD 905
BD 906
BD 907
BD 908
BD 909
BD 910
BD 911
BD 912
151
156
120
124
120
124
120
124
120
124
128
128
BD 712
115 BD 933 64 128
BD 733
94 BD 934
66
BD 734
98 BD 935
64
BD 735
94 SD 936
66
BD 736
98 SD 937
64
BD 737
94 BD 938
66
BD 738
98 BD 939
64 BDW
BD 795
BD 940
66
• Data sheet available on request
21

CROSS REFERENCE GUIDE (continued)
TYPE
TYPE
TYPE
BOW 22C~()W~.~C
BOW 23BDW~3
BOW 23A·.SciVV23A
BOW 23B~OW23B
BOW 23CBOIN 23C
BOW24 BOW~4
BOW 24ABDW~4A
:~~ ~:~:~~;:~
:g: :::::ei:~
BOW 51CBO\;V.51C
BOW 52 BOW 52
BOW 52A?:3DW$2~
BOW 52B.BOW52B
BOW 52C.I3()\lV~26
BOW 53IIDW2:r .
BOW 53A .S[)W23A
BOW 53BBDV\I:?j~
BOW 53CElQW23C
:g:::::~~~
BOW 54CBDW24C
*
*
*
133
133
133
133
138
138
138
138
BOW 636DXta ..• 161
:~~ ~~::g~:;: ~~~
BOW 63C 80X6.3C 161
BOW 64 BPX,M. 173
BOW 64A.ElOXMA 173
BOW 64B130)(548 173
:~~ ~~c'~g~:~~. ~~~
BOW 73ABDW$)3A 151
:~~ ~~~;:~~~~;~ ~~~
• Data sheet available on request
··i ... ··i. .
BOW 74 >130W94
:g:;:~L1~~
BOW91 SDWSl
156
156
156
156
143
:~~ ~~~g~:~"i ~~~
BOW 93A.60W93A 151
BOW 93BBriW~3B 151
BOW 93C aDW93C 151
BOW 94 BOW 94 156
BOW 94A • BOlN .. 94A 156
BOW 94B BDW.94B 156
BOW 94CBDW94C 156
BOX 3380>53·· 161
BDX 53ABQX5~A 161
:~~ :!~!g~i;~< :~;
BDX 54ABOx54A.
BDX 54B~q)(5413
BOX 54CaDKMc
:~~ ~~AI::g~:::;
:
BDX 62BBO)(86C
~ ~ ~~A::g~:~~
BDX 63B.BOX86C
BDX 64:.aokaSA
173
173
173
190
190
190
185
185
185
200
BDX 64ABb·~:fS8B
BDX 64B solene
BDX 65SC>X87A
BDX 65A.80XS7Ef
BDX 65BBDX81C
BOX 70 BOX11
BDX 77B~709 ........ .
BDX 7880710
BDX 83 BO)(87X."87 .••....•.
BDX 87 A··B·O·X87A
BDX 87B • SDis7B·
BDX 87csDX!37C
BDX 88 BOXS8 .
BDX 88AB.[)XS8A
BDX 88BBDX8SS.
BDX 88C .• BDXSSC
BDX 91Bbw ~1A
m~~ '~i$~i
200
200
195
195
195
110
115
195
195
195
195
200
200
200
200
185
185
185
185
190
190
190
190
195
195
195
195
200
200
200
200
22

TYPE
SGS-ATES PAGE TYPE
SGS-ATES PAGE TYPE
sQS-ATES PAGE
NEAREST NEA.REST .• NE/lt,RESl:
BOX 96 ~OW22C * BU 361 BUW 35 359 BUR 21 BUV 21'· 335
BOY 57 BOY 57 205 BU 406 '. 9U406 249 BUR 22 .. BUV22. 335
BOY 58 BOY 58. 205 BU 4060 BU4060 255 BUR 23 8UV23. 338
BOY 90 BOY 90 208 BU 406H BU 4G6H 249 BUR 24 BUV24 338
BOY 91 BOY 91 208 BU 407 au 407 261 BUR 50 BUR SO 301
BOY 92 BOY 92 208 BU 4070 au 4010 255 BUR 51 ·BUR 51 307
BFX 34 BFX 34 210 BU 407H BU407H 261 BUR 53 BUR 52 313
BSS 44 BSS44 214 BU 408 BU408 249 BUS12 BUW35 359
BSW 67 BSW67 218 BU 4080 au 40$n 255 BUW 12A .BUW 3j;! 359
BSW 68 BSW.68 218 BU 411 . SU 6070 * BUS13 Sm

CROSS REFERENCE GUIDE (continued)
TYPE
TYPE
TYPE
BUW46
BUW 57
BUW 58
BUW66
BUW 67
BUW 73
BUX10
BUX lOS
BUX 11
BUX 11 N ",K1'J,)C:l,l:11\1:
BUX 11S
BUX 12
BUX 13
BUX 14
BUX 15
BUX 16
BUX 16A
BUX 16B
BUX 16C
BUX 17
BUX 17A
BUX 17B
BUX 17C
BUX 18
BUX18A
BUX 18B
BUX 18C
BUX 20
BUX 20S
BUX 21
BUX 21S
BUX 22
BUX 23
BUX 24
BUX 25
BUX 28
BUX 29
BUX 37
BUX 40
BUX 40A
BUX 40S
BUX 41
BUX 41N
BUX41S
BUX 42
BUX 43
BUX 44
BUX 45
BUX 46
BUX 47
BUX 48
BUX 48A
BUX 48B
BUX 48C
BUX 77
BUX 78
BUX 80
BUX 82
BUX 84
BUX 97
BUX 97A
BUX 97B
BUY 18S
BUY 47
BUY 48
BUY 49P
BUY 49S
BUY 57
BUY 58
BUY 68
BUY 69A
BUY 69B
BUY 69C
044 Cl
044 C2
417 044 C3
417 044 C4
417 044 C5
423 044 C6
429 044 C7
423 044 C8
044 C9
441 044 Cl0
443 044 Cll
359 044 C12
445 044 Hl
447 044 H2
449 044 H4
449 044 H5
449 044 H7
044 H8
044 Hl0
044 Hll
* 04401
04403
* 04405
MJ 424
MJ 425
* MJ 900
MJ 901
MJ 1000
MJ 1001
MJ 2500
MJ 2501
MJ 2955
429 MJ 3000
MJ 3001
484 MJ 3029
484 MJ 3030
MJ 3040
MJ 3041
487
487
487
487
487
487
487
487
487
487
489
489
489
489
489
489
489
489
491
491
491
359
359
493
493
493
• Data sheet available on request
24

TYPE
saS-ATES PAGE TYPE
SaS-ATES PAGE TYPE
SaS-ATES PAGE
NEAREST NEAREST NEAREST
MJ 3042 BU 920P 290 MJE 801 MJE 801 508 TIP 32C TIp32C 530
MJ 4030 MJ 4030 499 MJE 802 MJE 802· 508 TIP 41 TIP 41 532
MJ 4031 MJ 4031 499 MJE 803 MJE 803 508 TIP 41A TIP 41A 532
MJ 4032 MJ 4032 499 MJE 13002 MJE 13002 511 TIP 41B TIP 41B 532
MJ 4033 MJ 4033 499 MJE13003 MJE 13003 511 TIP 41C Tlp41C 532
MJ 4034 MJ 4034 499 MJE 13004 MJE 13004 517 TIP 42 TIP42 534
MJ 4035 MJ 4035 499 MJE13005 MJE13005 517 TIP 42A TIP42A 534
MJ 10000 BU 930 293 MJE 13006 MJE13006 522 TIP 42B TIP 42B 534
MJ 10001 BUB3r 293 MJE13007 MJE13007 522 TIP 42C TIP42C 534
MJ 10002 BU 920P 290 MJE 13007A MJE 13007A 522 TIP 47 TIP 47 536
MJ 10003 BU 921P 290 SE 9300 BOW93A 151 TIP 48 TIP 48 536
MJ 10004 MJ 10004 501 SE 9301 80W93B 151 TIP49 TIP 49 536
MJ10004P MJl0004P 501 SE 9302 BOW 93C 151 TIP 50 TIP50 536
MJ 10005 MJ 10005 501 SE 9303 .BOX 87A 195 TIP 51 TIP 51 542
MJ 10005P MJl000SP 501 SE 9304 BOX87B 195 TIP 52 TIP 52 542
MJ 11011 MJ 11011 504 SE 9305 BOX 87e 195 TIP 53 TIP53 542
MJ 11012 MJ 11012 504 SE 9400 BOW94A 156 TIP 54 TIP 54 542
MJ 11013 MJ 11013 504 SE 9401 BOW94B 156 TIP 73 B0905 120
MJ 11014 MJ 110.14 504 SE 9402 BDW94C. 156 TIP 73A 130907 120
MJ 11015 MJ 11015 504
SE 9403 BOX 88A 200 TIP 73B B0909 120
SE 9404 BOX 88B 200 TIP 73C BO 911 120
MJ 11016 MJ 11016 504
SE 9405 BOX 88C 200 TIP 74 80906 124
MJ 10012 BU 931 293
TIP 29 TIP29 524 TIP 74A 80908 124
MJ 13014 BUW 34 359
MJ13015 BUW 34 359
TIP 29A TIP 29A 524 TIP 74B 80910 124
TIP 29B .TIP29B 524 TIP 74C B0.912 124
MJ 13330 BUX 41 423 TIP 29C TIP29C 524 TIP 100 BOX53A 161
MJ 13331 BUX42 435 TIP 30 TIP30 526 TIP 101 BOX 63B 161
MJ 13332 BUV 23 338 TIP 30A ·ttP 30A 526 TIP 102 BOX 5SC 161
MJ 13333 BUV24 338 TIP 30B TIP30e .. 526 TIP 106 BOX~4A 173
MJ 13334 BUV 24 338 TIP 30C TIP 30C 526 TIP 106 BDX?4B 173
MJE 340 MJE 340 506 TIP 31 TIP;31 . 628 TIP 107 ·.BOXf>4C 173
MJE 350 MJE 350 506 TIP 31A TIP 31A 528 TIP 110 TIP1~O 549
MJE 700 MJE 700 508 TIP 31B TIP31B 528 TIP 111 .. TIP 111 549
MJE 701 MJE 701 508 TIP 31C TIP 31e 528 TIP 112 TIP 112 549
MJE 702 MJE)02 508 TIP 32 TIP 32 530 TI P 115 ··riP115 551
MJE 703 MJE 703 508 TIP 32A TIP32A . 530 TIP 116 TIP l1i. 551
MJE 800 MJE 81)0 508 TIP 32B TIP.328·· 530 TIP 117 ••.• TIPj17 551
25

CROSS REFERENCE GUIDE (continued)
TYPE
TIP 120
TIP 121
TIP 122
TIP 125
TIP 126
TIP 127
TIP 130
TIP 131
TIP 132
TIP 135
TIP 136
TIP 137
TIP 140
TIP 141
TIP 142
TIP 145
TIP 146
TIP 147
TIP 150
TIP 151
TIP 152
TIP 660
TIP 661
TIP 662
2N 3055E
2N 3418
2N 3419
2N 3420
2N 3421
2N 3439
2N 3440
2N 3445
2N 3446
2N 3553
2N 3554
2N3713
2N 3714
• Data sheet available on request
553 2N 3715
553
553
2N 3716
2N 3719
558 2N 3720
558 2N 3789
:i~~Er
B8544" '.
2N 3789
26
TYPE
580 2N 5490
580 2N 5492
214 2N 5494
214 2N 5496
584 2N 5671
584 2N 5672
584 2N 5681
584 2N 5682
480 2N 5758
480 2N 5781
480 2N 5782
588 2N 5783
588 2N 5784
588 2N 5785
591 2N 5786
591 2N 5875
591 2N 5876
595 2N 5877
595 2N 5878
359 2N 5879
607 2N 5880
607 2N 5881
607 2N 5882
611 2N 6032
611 2N 6033
611 2N 6034
359 2N 6035
94 2N 6036
94 2N 6037
94 2N 6038
214 2N 6039
480 2N 6040
469 2N 6041
615 2N 6042
615 2N 6043
615 2N 6044
615 2N 6045
.S.G$~AT$S:I
N"SA'FtEST .•..
" , " "",'
B[)70l"
a6t07
eb7()p ....
BD7·()9.
2N!)~.i.l
. 2N.5~72
< .. Bsw.e7'i
.···.BSVV67
. BDW51C
.BSSA4 .
····:~~···!t·.··········
;~ii:5<
2I:'J5876
]~~~!~
·sDW51.A,
~3~:~~
2NB033· •
i!~~
2N6037
'2N()q:3~
2N6D3!:1
BOX54A
:·Bo~M~i.
PAGE
110
110
110
110
624
624
218
218
133
214
214
214
480
480
480
632
632
637
637
138
138
133
133
642
642
647
647
647
651
651
651
173
173
.: a6>

TYPE
SGS-:-ATES
NEA"EST
PAGE TYPE TYPE
2N 6050 ·2N~050 655 2N 6292 2N 6547
2N 6051 .. 2N6Q51 655 2N 6306 2N 6569
2N 6052 2N6Q52 655 2N 6307 2N 6573
2N 6053 2Ne053 660 2N 6308 2N 6574
2N 6054
2Ne054
,",... 660 2N 6338 2N 6575
2N 2N 6339 2N 6594
2N 6340 2N 6648
2N 6057 2N 6341 2N 6649
2N 6354 2N 6650
2N 6383 2N 6666
2N 6107 2N 6384 2N 6667
2N 6385 2N 6668
2N 6111 2N 6386 2N 6702
2N 6121 2N 6387
2N 6388
2N 6469
2N 6470
2N 6471
2N 6472 133
2N 6473 110
2N 6475
2N 6486
2N 6487
2N 6488
2N 6251 2N 6489
2N 6490
2N 6491 696
2N 6496 595
2N 6511 359
2N 6512 359
683 2N 6513 359
683 2N 6514 359
683 2N 6531 161
683 2N 6532 161
2N 6287 683 2N 6544 699
2N 6288 673 2N 6545 699
2N 6546
27
- .. - -----~---
~------.-----~ .----~--

ALPHABETICAL LIST OF SYMBOLS
B
d
Bandwidth
Collector-base capacitance (emitter open to a.c. and d.c.)
Distortion
Second breakdown energy (with base-emitter junction reverse
biased)
Frequency
Transition frequency
Voltage gain
Common emitter, small-signal value of the short-circuit forward
current transfer ratio
Common emitter, static value of the forward current transfer ratio
Common emitter, static value of the forward current transfer matched
pair ratio
Base current
IB1
IB2
IBF
IBFM
IBM
IBR
IBRM
IC
ICBO
I CEO
ICER
Turn-on current
Turn-off current
Base forward current
Base forward peak current
Base peak current
Base reverse current
Base reverse peak current
Collector current
Collector cutoff current with emitter open
Collector cutoff current with base open
Collector cutoff current with specified resistance between emitter
and base
Collector cutoff current with emitter short-circuited to base
Collector cutoff current with specified reverse voltage between
emitter and base
Collector peak current
Drain current
Emitter current
28

Emitter cutoff current with collector open
Continuous DC forward current
Peak forward current
Continuous DC reverse current
Second breakdown collector current (with base-emitter junction
forward biased)
Output power of a specified circuit
Total power dissipation
Base dropping resistance
Resistance between base and emitter
Collector dropping resistance
Emitter dropping resistance
Load resistance
Thermal resistance
Rth j-amb
Rth j-ease
Tamb
Tease
t,
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case
Time
Ambient temperature
Case temperature
Fall time
Junction temperature
Turn-off time
Turn-on time
Rise time
Storage time
Storage temperature
Base-emitter voltage
VBE (sat)
V(BR)CBO
V(BR) CEO
Base-emitter saturation voltage
Collector-base breakdown voltage with emitter open
Collector-emitter breakdown voltage with base open
29

ALPHABETICAL LIST OF SYMBOLS (continued)
V(BR)CER
V(BR)CES
V(BR)CEV
V (BR) EBO
V CB
V CBO
VCE
V CEK
VCEO
V CEO (sus)
VCER
VCER (sus)
VCE (sat)
V CES
V CEV
VCEV(sus)
V CEX (sus)
V EB
V EBO
V F
Vi
V R
V RM
ZBE
Zi
Collector-emitter breakdown voltage with specified resistance
Collector-emitter breakdown voltage with emitter short-circuited to
base
Collector-emitter breakdown voltage with specified reverse voltage
between emitter and base
Emitter-base breakdown voltage with collector open
Collector-base voltage
Collector-base voltage with emitter open
Collector-emitter voltage
Knee voltage at specified condition
Collector-emitter voltage with base open
Collector-emitter sustaining voltage with base open
Collector-emitter voltage with specified resistance between emitter
and base
Collector-emitter sustaining voltage with specified resistance between
emitter and base
Collector-emitter saturation voltage
Collector-emitter voltage with emitter short-circuited to base
Collector-emitter voltage with specified reverse voltage between
emitter and base
Collector-emitter sustaining voltage with specified reverse voltage
between emitter and base
Collector-emitter sustaining voltage with specified circuit between
emitter and base
Emitter-base voltage
Emitter-base volta:ge with collector open
Continuous DC forward voltage
Input voltage of a specified circuit
Continuous DC reverse voltage
Peak reverse voltage
Impedance between base and emitter
Input impedance
30

RATING SYSTEMS FOR ELECTRONIC DEVICES
A. DEFINITIONS OF TERMS USED
a. Electronic device. An electronic tube or valve, transistor or other semiconductor
device.
Note: This definition excludes inductors, capacitors, resistors and similar components.
b. Characteristic. A characteristic is an inherent and measurable property of a device.
Such a property may be electrical, mechanical, thermal, hydraulic, electro-magnetic,
or nuclear, and can be expressed as a value for stated or recognized conditions.
A characteristic may also be a set of related values, usually shown in graphical
form.
c. Bogey electronic device. An electronic device whose characteristics have the published
nominal values for the type. A bogey electronic device for any particular
application can be obtained by considering only those characteristics which are
directly related to the application.
d. Rating. A value which establishes either a limiting capability or a limiting condition
for an electronic device. It is determinated for specified values of environment and
operation, and may be stated in any suitable terms.
Note: Limiting conditions may be either maxima or minima.
e. Rating system. The set of principles upon which ratings are established and which
determines their interpretation.
Note: The rating system indicates the division of responsibility between the device
manufacturer and the circuit designer, with the object of ensuring that the working
conditions do not exceed the ratings.
B. ABSOLUTE MAXIMUM RATING SYSTEM
Absolute maximum ratings are limiting values of operating and environmental conditions
applicable to any electronic device of a specified type as defined by its published
data, which should not be exceeded under the worst probable conditions.
These values are chosen by the device manufacturer to provide acceptable serviceability
of the device, taking no responsibility for equipment variations, environmental
variations, and the effects of changes in operating conditions due to variations in the
characteristics of the device under consideration and of all other electronic devices in
the equipment.
The equipment manufacturer should design so that, initially and throughout life, no
absolute maximum value for the intended service is exceeded with any device under
the worst probable operating conditions with respect to supply voltage variation,
equipment component variation, equipment control adjustment, load variations,
signal variation, environmental conditions, and variations in characteristics of the
device under consideration and of all other electronic devices in the equipment.
31

RATING SYSTEMS FOR ELECTRONIC DEVICES (continued)
C. DESIGN - MAXIMUM RATING SYSTEM
Design-maximum ratings are limiting values of operating and environmental conditions
applicable to a bogey electronic device of a specified type as defined by its published
data, and should not be exceeded under the worst probable conditions.
These values are chosen by the device manufacturer to provide acceptable serviceability
of the device, taking responsibility for the effects of changes in operating conditions
due to variations in the characteristics of the electronic device under consideration.
The equipment manufacturer should design so that, initially and throughout life, no
design-maximum value for the intended service is exceeded with a bogey device under
the worst probable operating conditions with respect to supply-voltage variation,
equipment, component variation, variation in characteristics of all other devices in the
equipment, equipment control adjustment, load variation, signal variation and environmental
conditions.
D. DESIGN - CENTRE RATING SYSTEM
Design-centre ratings are limiting values of operating and environmental conditions
applicable to a bogey electronic device of a specified type as defined by its published
data, and should not be exceeded under normal conditions.
These values are chosen by the device manufacturer to provide acceptable serviceability
of the device in average applications, taking responsibility for normal changes
in operating conditions due to rated supply-voltage variation, equipment component variation,
equipment control adjustment, load variation, signal variation, environmental
conditions, and variations in the characteristics of all electronic devices.
The equipment manufacturer should design so that, initially, no design-centre value
for the intended service is exceeded with a bogey electronic device in equipment operating
at the stated normal supply-voltage.
The Absolute Maximum Rating System is commonly used for semiconductor devices.
32

QUALITY
• 100% ELECTRICAL TESTING
• MARKING
• GROUP A ACCEPTANCE
• PACKING
• PACKING AND DOCUMENTATION ACCEPTANCE
• SHIPPING
GROUP A ACCEPTANCE
Subgroup
Parameters
Temp. Insp.
°C Level
Acceptablee quality
level (AQL)
Hermetic and
molded packages
A1
Visual and Mechanical Inspection,
Major
Minor
I
0.25
1
*A2 Inoperative failure (electrical and mechanical)
25°C II
0.15
A3
DC parameters
hFE ranges 0
25°C II
0.65
1
A4
AC parameters at 25° C and
DC parameters at high temperature
S4
2.5
o Applicable when hFE is guaranteed as min and max
* Definition of electrical inoperative:
- open or short circuit
- < 80% of guaranteed spec value for: BVCBO , BVCEO , BVCER , BVCES, BVCEV , BVEBO
- > 200% of guaranteed spec value for: V CElsat)
- > 200% of guaranteed spec value for: ICBO, ICEs, ICEO' IcEV at 50ro guaranteed BV value
- > 150% of guaranteed max spec values for hFE
- < 50% of guaranteed min spec values for hFE
For further information Quality and Reliability see the SGS SURE 3 programme.
33

PRECAUTIONS FOR PHYSICAL HANDLING OF POWER
PLASTIC TRANSISTOR [TO-220, SOT -93, TO-126 (SOT -32)]
When mounting power transistors certain precautions must be taken in operations such as bending of
leads, mounting of heatsink, soldering and removal of flux residue. If these operations are not carried
out correctly, the device can be damaged or reliability compromised.
1. Bending and cutting leads
The bending or cutting of the leads requires the following precautions:
1.1. When bending the leads they must be clamped tightly between the package and the bending point
to avoid strain on the package (in particular in the area where the leads enter the resin) (fig. 1). This
also applies to cutting. the leads (fig. 2).
1.2. The leads must be bent at a minimum distance of 3 mm from the package (fig. 3a).
1.3. The leads should not be bent at an angle of more than 90° and they must be bent only once
(fig.3b).
1.4. The leads must never be bent laterally (fig. 3c).
1.5. Check that the tool used to cut or form the leads does not damage them or ruin their surface finish.
Fig. 1 - Bending the leads
Fig. 2 - Lead forming or cutting mechanism
Plastic
Package
_It -oj
m
w
j j
Lead to~mjng or cutting
t mechanIsm
spaced? W
A'0039
Clamp mechanIsm
Fig. 3 - Angles for lead wire bending
113.0min.
a
b
c
34

2. Mounting on printed circuit
During mounting operations be careful not to apply stress to the power transistor.
2.1. Adhere strictly to the pin spacing of the transistor to avoid forcing the leads.
2.2. Leave a suitable space between printed circuit and transistor, if necessary use a spacer.
2.3. When fixing the device to the printed circuit do not put mechanical stress on the transistor. For this
purpose the device should be soldered to the printed circuit board after the Transistor has been
fixed to the heatsink and the heatsink to the printed circuit board.
3. Soldering
In general a transistor should never be exposed to high temperature for any length of time. It is
therefore preferable to use solderi ng methods where the transistor is exposed to the lowest possible
temperatures for a short time.
3.1. Tolerable conditions are 260°C for 10 sec or 350°C for 3 sec. The graphs in fig. 4 give an idea of the
excess junction temperature during the soldering process for a TO-220 (Versawatt). It is also important
to use suitable fixes for the tin baths to avoid deterioration of the leads or of the package
resin.
3.2. An excess of residual flux between the pins of the transistor or in contact with the resin can reduce
the long--term reliability of the device. The solvent for removing excess flux must be chosen with care.
The use of solvents derived from trichloroethylene is not recommended on plastic packages because
the residue can cause corrosion.
Fig. 4 - Junction temperatures during soldering
T J
('C)
260·C soldenng bath
S-J630 5-5631
TJ 350·C soldering bath
Exposed to air
Exposed to air
(OC)
150 150
100
50
~ '
1.5mm,
260'C
I
Solder
I
100
50
20 40 60 60 100 140 180 220 Time (sec) 50 60 T,me{sec)
35

4. Mounting at heatsink
To exploit best the performance of power transistors a heatsink with Rth suitable for the power
that the transistor will dissipate must be used.
4.1. The plastic packages used by SGS for its power transistors (SOT -32, SOT -93, Versawatt) provide
for the use of a single screw to fix the package to the heatsink. A compression spring (clip) can be
sufficient as an alternative (fig. 5).
Fig. 5 -- SOT -93 mounting examples
0
-
-0-
0
~~l
, ,
, ,
"
,~
,'~
The screw should be properly tightened to ensure good contact between the back of the package
and the heatsink but should not be too tight to avoid deformation of the copper part (tab) of the
package causing breaking of the die or separation of the resin from the tab.
4.2. The contact Rth between device and heatsink can be improved
by inserting a thin layer of silicone grease with
fluidity sufficient to guarantee perfectly uniform distribution
on the surface of the tab. The thermal resistance
with and without silicone grease is given in fig. 6. An
excessively thick layer or an excessive viscosity of the
grease can degrade the R th .
Fig. 6 - Contact thermal resistance
vs. insulator thickness.
5. Heatsink problems
The most important aspect from the point of view of
reliability of a power transistor is that the heatsink
should be dimensioned to keep the T j of the device as
low as possible. From the mechanical point of view,
however, the heatsink must be realized so that it does
not damage the device.
0.05 0.10 0.15 Th{mm)
36

5.1. The planarity of the contact surface between device and heatsink must be < 25 Ilm for TO-220,
SOT -93, TO-126 (SOT -32).
5.2. If self threading screws are used there must be an outlet for the material that is deformed during
formation of the thread. The diameter

ACCESSORIES AND MOUNTING INSTRUCTIONS
TO-3
~ ""
ACCESSORY
CHEESE HEAD
Q.ly
MECH.
ASSEMBLY NUMBER MATERIAL DATA
\ SCREWS 2 NOT AVAILABLE FROM SGS
SLOTTED
Page
~ MICA *
1 CDA 3126' MICA 43
WASHER
o
INSULATING
BUSHES
2 COA 31!;5A NYLON 44
~
WASHERS 2 NOT AVAILABLE FROM SGS
LOCK
2· NOT AVAILABLE FROM SGS
WASHERS
~
HEXAGON
NUTS
4 NOT AVAILABLE FROM SGS
~ SOLDER LUG 1 NOT AVAILABLE FROM SGS
~
S~'0375/3
* CDA3126B FOR IvtODIFtED TO-3 (see 2N6032 and 2ft16033)
Maximum torque (applied to mounting flange)
Recommended: 0.55 Nm
Maximum: 1 Nm.
38

SOT-93
~
ACCESSORY
MECH.
NUMBER MATERIAL ASSEMBLY DATA
TYPE
CHEESE HEAD
SCREWS
Q.ty
Page
1 NOT AVAILABLE FROM SGS
SLOTTED
o
.~ MICA
WASHER
INSULATING
%
BUSHES
WASHERS
LOCK
WASHERS
,~
HEXAGON
NUTS
,~ SOLDER LUG
1 COA 3154 MICA 44
1 COA 3155 C NYLON 44
1 NOT AVAILABl.E FROM SGS
1 NOT AVAILABLE FROM 5GS
2 NOT AVAILABLE FROM SGS
1 NOT AVAILABLE FROM SGS
t!?
5_:'668
Maximum torque (applied to mounting flange)
Recommended: 0.55 Nm
Maximum: 1 Nm.
39

ACCESSORIES AND MOUNTING INSTRUCTIONS (continued)
TO-126 (SOT -32)
,
ACCESSORY
TYPE
CHEESE HEAD
SCREW
SLOTTE D
Q.ty
MECH.
ASSEMBLY NUMBER MATERIAL DATA
Page
NOT AVAILABLE FROM SGS
LOCK
WASHER
COA 3164
STEEL C 72
46
UNI 3545
MICA
WASHER
COA 3162 MICA 45
WASHER
NOT AVAILABLE FROM SGS
LOCK
WASHER
NOT AVAILABLE FROM SGS
HEXAGON
NUT
NOT AVAILABLE FROM SGS
S-C340/1
Maximum torque (applied to mounting flange)
Recommended: 0.55 Nm
Maximum: 0.7 Nm.
40

TO-220
~
ACCESSORY
TYPE Q.ty
CHEESE HEAD
SCREW 1
SLOTTED
RECTANGULAR
~ - 1
WASHER
ASSEMBLY NUMBER
NOT AVAILABLE FROM 5 G 5
CDA3l63
MATERIAL
MECH.
DATA
Page
46
'" ''''''----
MICA
WASHER
1
eOA 3159
MICA
45
/
/ r-
/
WASHER
/
LOCK
/-
///r--
INSULATING
1
BUSHE
1
WASHER
HEXAGON
NUTS
1
2
eOA 3155 B
NOT AVAILABLE FROM SGS
NOT AVAILABLE FROM SGS
NOT AVAILABLE FROM SGS
NYLON
44
t:>'~
SOLDER LUG 1
5-0366/3
NOT AVAILABLE FADM' SG5
Maximum torque (applied to mounting flange)
Recommended: 0.55 Nm
Maximum: 0.7 Nm.
41

ACCESSORIES AND MOUNTING INSTRUCTIONS (continued)
TO-220
~ "'''~"
TYPE
~~:::~" ..
SLOTTED
Q.ty
1
MECH.
ASSEMBL V NUMBER MATERIAL DATA
Page
NOT AVAILABLE FROM SGS
INSULATING
BUSHING
1
COA 31558 NYLON 44
'~ MICA
INSULATOR
1
CDA 3159 MICA 45
METAL
WASHER
1
NOT AVAILABLE FROM SGS
LOCK
WASHER
HEAT SINK
max 2 mm
0="".-
NUTS
5-038913
1
NOT AVAILABLE FROM SGS
2
NOT AVAILABLE FROM SGS
Maximum torque (applied to mounting flange)
Recommended: 0.55 Nm
Maximum: 0.7 Nm.
42

CDA 3126A
42
16.9
30.1
'--+-;;04--~ .
---T--~
1.4
CDA 3126B
42
16.9
30.1
43

ACCESSORIES AND MOUNTING INSTRUCTIONS (continued)
COA 3154
25
0.05
A_0042
COA 3155
.. C i
b
I
~
ca==t1
.QJ~X45~ '------1
A - 0024/2
Suffix Package
•
b c d
A TO-3 6.40106.60 3.00103.10 4.00104.05 1.1 max
B TO-220 5.30105.50 3.00103.10 3.83103.88 0.60100.65
C SOT-93 6.40106.60 3.00103.10 4,00104,05 1.3 to 1.4
•
1.55101.65
1.70101.80
2.7 102.9
Material: Nylon;
Dimensions: mrn.
44

"
CDA 3159
14.8
22
#L
R=2
-~
0 a •
. __ X
-~
I 0.10
~ "1-40.Q~
A-UU2SI3
CDA 3162
A-0025/3
I-.cc:.;c.=:.:==--_I NOTE
45

ACCESSORIES AND MOUNTING INSTRUCTIONS (continued)
COA 3163
A-0023/3
COA 3164
A-0022/1
MATERIAL: Steel nickel plated
46

DATA SHEETS
47

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 175, BD 177 and BD 179 are silicon epitaxial-base NPN power transistors in
Jedec TO-126 plastic package intended for use in medium power linear and
switching applications.
The complementart PNP types are the BD 176, BD 178 and BD 180.
ABSOLUTE MAXIMUM RATINGS
COllector-base voltage (I E= 0)
Collector-emitter voltage (I s= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Total power dissipation at T case :

THERMAL DATA
Rth j-case Thermal resistance junction-case max 4.16 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff for 60175 V cs=45V 100 ~
current (I E= 0) for 60177 ' V cs=60V 100 ~A
for 60179 V cs=SOV 100 ~
lEBO Emitter cutoff V Es=5V 1 mA
current (I c =0)
V CEO (Sus)*Collector-emitter I C =100 mA
sustaining voltage for 60175 45 V
for 60177 60 V
for 60179 SO V
V CE (sat)* Collector-emitter Ic =1A I B= 0.1A O.S V
saturation voltage
VBE * Base-emitter voltage Ic =1A V CE=2V 1.3 V
hFE* DC current gain Ic =150mA V CE=2V 40 -
Ic =1A V CE=2V 15 -
fT Transistion frequency Ic =250mA V c~10V 3 MHz
* Pulsed: pulse duration = 300 ~s, duty cycle ~ 1.5%
49

Safe operating areas
DC current gain
G 3727
10'
v r;::;;
"'j-..
VeE = 2V
1\
10
o ,
VeE (V J
10.
4 ,. 4 ,.
10-' 1 Ie (AJ
DC transconductance
Collector-emitter saturation voltage
Ie
(AJ
G 3720
VCE(sat)
(V)
G 3728
1.5
0..5
~
[7
VCE =2V
0..5
\
1"
Ie =o.5A\lA
\
""'
\
A \3A
I""f..
"'
0.
0..5
10-3
4 • 8
10.-'
4 • 8
10- 1
4 • 8
IS (A)
50

Collector-em itter saturation voltage
Base-emitter saturation voltage
VCE(S'I
(V)
I
,
,
,
8
,
--
hFE='O
/
'/
G 3722
veE(s,1 )
(V)
0.5
1
I
I
I I ./'
I
---
hFE
=10
. .-- ....
V
.-
G 3723
1
I
,
rt
I
I
!
2
10-'
, 8
IC (A)
6 8
6 8
IC(A)
I
(~S)
8
,
,
,
,
6
Satured switching characteristics
I
Vce=lOV
Ie, =-l e2
hFE='O
f;;::--+-- ........
........
r- I."
K t...........l If ~
G 3724
Ion
,
I
,
I
8 , , 6
•
IC(A)
Plol
(W)
28
24
20
,6
,2
o
Power derating chart
\
I"
I'\.
\ ,
I'\:
I\.
G 3129
20 40 60 80 ,00 ,20 Tca • .c°C)
\.
51

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SO 176, SO 178 and SO 180 are silicon epitaxial-base PNP power transistors in
Jedec TO-126 plastic package intended for use in medium power linear and
switching applications.
The complementary NPN types are the SO 175, SO 177 and SO 179.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Total power dissipation at T case::5 25°C
Storage temperature
Junction temperature
BO 176 BO 178 BO 180
-45V -60V -80V
-45V -60V -80V
-5V
-3A
-7A
30W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGRAM
,~'
E
MECHANICAL DATA
Dimensions in mm
5/80 52

THERMAL DATA
Rth j-case Thermal resistance junction-case 4.16 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
leBo Collector cutoff for 80176 V cEF-45V -100 ItA
current (I E= 0) for 80178 V cEF-60V -100 ItA
for 80180 V cEF-80V -100 ItA
lEBO Emitter cutoff V EIF-5V -1 mA
current (I c =0)
V CEO (Sus)*Coliector-emitter Ie =-100 mA
sustaining voltage for 80176 -45 V
for 80178 -60 V
for 80180 -80 V
VCE (sat)* Collector-emitter Ie =-1A I B =-0.1A -0.8 V
saturation voltage
V BE * Base-emitter voltage Ic =-1A V cr-2V -1.3 V
hFE* DC current gain Ic =-150mA V cr-2V 40 -
Ic =-1A V CE=-2V 15 -
fT Transistion frequency Ic =-250mA V cr-1OV 3 MHz
* Pulsed: pulse duration = 300 ~s, duty cycle ~ 1.5%
53

Safe operating areas
DC current gain
-Ie
(A)
2
G 3730
Ie MAX PULSED t-+- -I
*PULSE OPERATION
106)Js
I'\.n
Ie MAX CONTINUOUS
I ~ 1
DC OPERATlON~ 1mst\..1
" 1\1 !
1\
hFE 8
veE .- 2V
G 3703
I"-
"-'\j
10-'
*FOR SINGLE NON
REPETITIVE PULSE
II
10
BD 176--
BD 178
BD 180
j
10
8
10-'
8
1 -Ie (A)
I
I
n
4 58
-Ie
(A)
DC transconductance
G -3704
Collector-emitter saturation voltage
G 3705
- veE (sat)
(V)
1.5
VeE'- v
\
Ie .-3A
\
0.5
V
0.5
\!e·-1A
le'-O.s N....l
f'....l
II
1 I
le·-2A
0.5
10- 3
10- 2
10-'
- IB (A)
54

Collector-emitter saturation voltage
Base-emitter saturation voltage
-VCE(sat)
(V)
G-3706
-VBE(sat)
(V)
G-3707
/
,
~
J.,..
/
0_5
-
"FE=10
V
/
hFE =10
, 8
-IC(A)
o
10-'
• 8
• 8
-le(A)
Satured switching characteristics
Power derating chart
t
8
(1'5)
6
2
Vce=-30V
161 = -la2
"FE= 10
G 3 08 - 7
Plot
(W)
28
24
20
16
I
'\ I !
f' I\.
I ! I I II !
I J
G-3729
I
i
.I
10-"-r- Io-
""'"
ts K
12
1'\
r\
I\.
-~
10-1
10-'
tf
ton
6 8 6 8
-Ie (A)
4
o
i
! '\
I"\,
20 40 60 60 100 120 Tcas.(·C)
55

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SO 233, SO 235 and SO 237 are silicon epitaxial-base NPN power transistors in
Jedec TO-126 plastic package intended for use in medium power linear and
switching applications.
The complementary PNP types are the SO 234, SO 236 and SO 238 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (I r;=O)
V CEO Collector-emitter voltage (I B= 0)
VCER Collector-emitter voltage (R BE= 1 KO)
V EBO Emitter-base voltage (I C= 0)
Ic Collector current
ICM Collector peak current
P tot Total power dissipation at T case ~25°C
T stg Storage temperature
T j Junction temperature
INTERNAL SCHEMATIC DIAGR4
BD 233 BD 235 BD 237
45V
45V
45V
60V
60V
60V
5V
2A
6A
25W
-65 to 150 "C
150"C
100V
80V
100V
MECHANICAL DATA
Dimensions in mm
5/80 56

THERMAL DATA
Rth j-case Thermal resistance junction-case max 5 °C/w
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff for 80233 V cs=45V 100 IlA
current (I E= 0) for 80235 V cs=60V 100 I1A
for 80237 V cs=100V 100 I1A
T case= 150°C
for 80233 V cs=4eV 2 mA
for 80235 V cs=60V 2 mA
for 80237 V cs=100V 2 mA
lEBO Em itter cutoff V Es=5V 1 mA
current (I c =0)
V CEO (Sus)*Coliector-emitter I c =100 mA
sustaining voltage for 80233 45 V
for 80235 60 V
for 80237 80 V
V CE (sat) * Collector-emitter Ic =1A I B=0.1A 0.6 V
saturation voltage
, VBE* Base-emitter voltage Ic =1A V CE=2V 1.3 V
hFE * OC current gain Ic =150mA Vc~2V 40 -
Ic =1A Vc~2V 25 -
fT Transistion frequency Ic =250mA V c~10V 3 MHz
hFE1/hFE2*Matched pairs I c = 150mA V c~ 2V 1.6 -
B0233 1 B0234
B02351 B0236
B0237/B0238
* Pulsed: pulse duration = 300 I1S. duty cycle :0; 1.5%
57

Safe operating areas
G 3718
IC ,~ hFE,
(A) IC MAX (PULSED) i- f+-- *PULSED OPERATION
DC current gain
G -3719
IC MAX (CONTINUOUS) i I 1~~
VCE = 2V
10-1
-* FOR SINGLE NON
___ ~R~E~PE~T~IT.~iV~E~P;U;LS~E~ ____ 4--4-4~~~
------+-H-++++++--l-----"---++f--PH+1
B0233
B0235
B0237
~U
6
, • •
10 vCE (V)
10'
...... j...
'\.
,
I\.
10
4
• . •
4 6 ,
10-' 10-1 1 IB(A)
DC transconductance
Collector-emitter saturation voltage
Ie
(A)
G 3720
VCE(sat
(V)
)
G 3721
1.5
0.5
o
O.S
If
II
VCE =2V
0.5
o
10-3
IC=O.SA
~
, 6 8
10-'
lA
1\
,
1\
~
\
A
\..
""
, 6 8
10- '
A
I'
, 8 8
la(A)
58

Collector-emitter saturation voltage
G- 3722
I
(V)
V
,
/
10-'
-
f-----
hFE =10
Ie (A)
Satured switching characteristics
G 3724
t
(flS) B
VeE(Sat
VBE(sat )
(V)
0.5
a
Ptot
(W)
Base-emitter saturation voltage
I! 'I ! I
:
_I I
G 3723
~tt
I --
i i I i I
c- ~- -H,-;-
I
1----I--i-
'---
~-::~t
-------
+ ~- 'I -I
II
,hFE - 10
, r'--- .
i
f-----1 :
i
i i
i
!
1 ~ f-----+ 1
1
6 8
Power derating chart
' II i
I
l _~-+ I
I I
I
-I ~
I
G 3725
10-1
,i--
, i
,
Vee=30V
lSI =-IS2
hFE=10
~
I "'"
~ ,
tf
T !
i I I
I;"
ton
20
10
a
1-1-1-\
['..
1'\
1'\
l'\.
r'\
1'\
1'\
I'\.
I'\.
l'\.
1'\
['\,
50 100
59

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SO 234, SO 236 and SO 238 are silicon epitaxial-base PNP power transistors in
Jedec TO-126 plastic-package intended for use in medium power linear and
switching applications.
The complementary NPN types are the SO 233, SO 235 and SO 237 respectively.
ABSOLUTE MAXIMUM RATINGS 80234 80236 B0238
V cso Collector-base voltage (I E= 0) -45V -60V -100V
V CEO Collector-emitter voltage (I s= 0) -45V -60V -80V
V CER Collector-emitter voltage (R SE= 1 KO) -45V -60V -100V
V ESO Em itter -base voltage (I C= 0) -5V
'c Collector current -2A
I CM Collector peak current -6A
P tot Total power dissipation at T case ::;25°C 25W
T stg Storage temperature
J unction temperature
-65 to 150°C
150°C
T j
INTERNAL SCHEMATIC DIAGR:4 :
MECHANICAL DATA
Dimensions in mm
5/80 60

THERMAL DATA
Rth j-case Thermal resistance junction-case max 5 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
leBo Collector cutoff for 80234 V cs=-45V -100 /lA
current (I E= 0) for 80236 V es=-60V -100 /lA
for 80238 V eS= -1 OOV -100 /lA
T case= 150°C
for 80234 Ves=-45V -2 mA
for 80236 V es=-60V -2 mA
for 80238 V cS= -1 OOV -2 mA
lEBO Emitter cutoff V EB=-5V -1 mA
current (I C =0)
V CEO (Sus)"'Coliector-emitter Ic =-100 mA
sustaining voltage for 80234 -45 V
(lB=O) for 80236 -60 V
for 80238 -80 V
V CE (sat) '" Collector -em itter I C =-1A I s=-0.1A -0.6 V
saturation voltage
V BE * Base-emitter voltage Ic =-1A V cE=-2V -1.3 V
hFE * DC current gain Ic = -150mA V cF -2V 40 -
Ic =-1A V cF-2V 25 -
fT Transistion frequency Ic =-250mA V cF-10V 3 MHz
hFE1 / hFE; Matched pairs
BD233/BD234
BD235/BD236
BD237/BD238
Ic =150mA V CE=2V 1.6 -
'" Pulsed: pulse duration = 300 /ls. duty cycle ~ 1.5%
61

-Ie 8
(A)
1
Safe operating areas
G 370~
IC MAX (PULSED) f- f-- * PULSED OPERAT TONe
,\. 1001'
, n \O}J
IC MAX (CONTINUOUS) 1~ ~
DC rirITI-~'f\ ' ~ I
hFE ,
DC current gain
-
-++
I I
VCE ;- 2V
G 3103
I -J] ~
i T- ~
I II I
I I
i
!
10-1
'- * ~~M:~,~~E ~SLNSE ,
1 1
i
1
I
II
B0234
B0236
B0238
t-
4 "
10 -VCE (V)
10
, : ! I,
Nl~
i II ,II : i I II ,
j Iii
"-
,
I:
, I II I
I
1II1
4 , ,
4 "
10-' 1 -IC (A)
DC transconductance
Collector-emitter saturation voltage
-IC
(A)
I
G 3704
- VCE(s.at )
(V)
G 3705
1.5
VCE;- V
1
IC; -3A
0.5
f1
I\Ic; lA
~
t'-
IC ;-2A
o
0.5
o
IC;-0.5~
11"'-1 II
n I TI
10- 3 10- 2 10-1 -I B (A)
62

-VCE(sal )
(V)
Collector-emitter saturation voltage
G 3106
Base-emitter saturation voltage
G- 3707
/
10-1
,
8
/
I
1 1---- -+-+-+-++-++++1- /~V"---+--1C-++--Y---H
- """'--f-- --I-
t---j.....-
--1--
~
0.5 1-----l--l-H--l--I-+-W- h - FĒ
=-10+---j---j--l-+l-1-H
hFE =10
10-'
I
B
(~s)
C
,
,
B
6
,
I
Satured switching characteristics
10-1
1 I
I !
VCC =-30V
1 161 =-162
"FE= 10
-..... t
- +- If
..........
Is
i'-..
Ion
I
G 3108
Ptot
(W)
20
10
o
I----+--I--f---+-+--H-f-I-------+--+_ +-
10-'
6 8
Power derating chart
l-I--
" 1"\
I\:
1"\
I\.
100
" 6
-Ie
3109
8
(A)
G
150 Teas. ("C)
63

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 239, BO 239A, BO 239B and BO 239C are silicon epitaxial-base NPN
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary PNP types are BO 240, BO 240A, BO 240B and BO 240C
respectively.
ABSOLUTE MAXIMUM RATINGS
B0239 B0239A B0239B B0239C
Collector-emitter voltage (RSE = 100D)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;25°C
Tamb :::; 25°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC DIAGR:4
VCER
VCEO
VESO
Ic
ICM
Is
Ptot
55V
45V
70V 90V
60V BOV
5V
2A
4A
0.6A
30W
2W
-65 to 150°C
150°C
115V
100V
MECHANICAL DATA
Dimensions in mm
. ¢~lIe!=to~ conoect.ed to tab.
5/80 64

THERMAL DATA
Rlh j-ease
Rlh j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 4.17 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for BD 239 and BD 239A
current (IB = 0)
VCE = 30V
for BD 239B and BD 239C
VCE = 60V
ICES Collector cutoff for BD 239 VCE = 45V
current (VBE = 0)
lEBO Emitter cutoff VEB = 5V
current (Ic = 0)
for BD 239A VCE = 60V
for BD 239B VCE = 80V
for BD 239C VCE = 100V
VCEO (Sus)'Collector-emitter Ic = 30mA
sustaining voltage for BD 239
(lB = 0)
for BD 239A
for BD 239B
for BD 239C
VCE (sal) , Collector-emitter Ic = 1A IB = 0.2A
saturation voltage
V BE (on)' Base-emitter Ic = 1A VCE = 4V
voltage
, hFE DC current gain Ic = 0.2A VCE = 4V
Ic = 1A VCE = 4V
hie Small signal Ic = 0.2A VCE = 10V
current gain
f = 1KHz
Ic = 0.2A
f = 1 MHz
VCE = 10V
Min. Typ. Max. Unit
0.3 rnA
0.3 rnA
0.2 rnA
0.2 rnA
0.2 rnA
0.2 rnA
1 rnA
45 V
60 V
80 V
100 V
0.7 V
1.3 V
40 -
15 -
20 -
3 -
'Pulsed: pulse duration = 300fLs, duty cycle ::;:;2%.
65

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 240, BD 240A, BD 240B and BD 240C are silicon epitaxial-base PNP power transistors
in Jedec TO-220 plastic package, intended for use in medium power linear and
switching applications.
The complementary NPN types are BD 239, BD 239A, BD 239B and BD 239C respectively.
ABSOLUTE MAXIMUM RATINGS
BO 240 BO 240A BO 240B BO 240C
VCER
V CEO
VEBO
Ic
ICM
IB
P tot
Collector-emitter voltage (R BE = lOOn)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base cu rrent
Total power dissipation at Tease < 25°C
Tamb

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 4.17 °C!W
Rth j-amb Thermal resistance junction-ambient max. 62.5 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
I CEO Collector cutoff for B0240 and B0240A
cu rrent (I B = 0) VCE = -30V -0.3 mA
for B0240B and B0240C
VCE = -60V
-0.3 mA
ICES Collector cutoff for B0240 VCE = -45V -0.2 mA
current (V BE = 0) for B0240A VCE = -60V -0.2 mA
for B0240B VCE = -80V -0.2 mA
for B0240C VCE = -100V -0.2 mA
lEBO Emitter cutoff V EB = -5V -1 mA
current (lc = 0)
V CEo(susi Collector-emitter Ic = -30mA
sustaining voltage for B0240 -45 V
(I B = 0) for B0240A -60 V
for B0240B -80 V
for B0240C -100 V
VCE(sat) * Collector-emitter Ic = -1A IB = -0.2A -0.7 V
saturation voltage
VBE(On) * Base-emitter Ic = -1A VCE = -4V -1.3 V
voltage
hFE* DC current gain Ic == -0.2A VCE = -4V 40 -
Ic == -1A VCE==-4V 15 -
hfe Small signal current Ic == ··0.2A VCE = -10V
gain f == 1 KHz 20 -
Ic == -0.2A VCE == -10V
f = 1 MHz 3 -
* Pulsed: pulse duration = 300 MS, duty cycle ~ 2% .
67

Safe operating areas
IC
(A)
t =100/-15
t=lm5---t
....... \
t=5m5 ::lo. ,
11 ' ......
t=100m5~
\
G-4774
\
~~
'\
\.
1\
80240
80240 A
802408
B0240 C
10 VCE (V)
Collector cutoff current
G 4777
DC current gain
10'
-
I
I
T=150·C
f--
T=100·C
I
10-'
I T=25"C
10-3
-0.5 -0.4 -Cl.3 -0.2 -0.1 0 0.1 0.2 0.3 YBE(V)
I
1-+-++++tH----+-+t-H+Il+------ --- -
10-'
, 6'
10-'
, 6 ,
IC (A)
68

Input and output capacitance
Base-emitter voltage
G_4776
10
I ill!
, .. , , .
10
I
-+- -H.tttH---hI-tHt1 ~-++t-tttltt--+-+-++Hft1I
0_4 -' ,. ;~
j'Lt. Hf-++++++ttI--+++-t+t-ltl---++ttHttl
0.2 - r-r'-+, !+t+tt-f-+t-ttit-lt--+-t+-ttHtt---+-HtttHl
, II
10-2 10-' .10
"c.E(sat)
( V)
Collector-emitter saturation voltage
"
I
I
G -"775
0.8
0.6
le=4A
le=3A
0.4
0.2
o
r- I~= 1A
I'.. I III
e= IA
I III
10 10' 10' Ie (mA)
69

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SD 241, SD 241A, SD 241S and SD 241C are silicon epitaxial-base NPN
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary PNP types are the SD 242, SD 242A, SD 242B and BD 242C
respectively.
ABSOLUTE MAXIMUM RATINGS
B0241 B0241AB0241BB0241C
V CER
VCEO
VEBO
Ic
ICM
IB
P tot
T stg
Tj
Collector-emitter voltage (RSE = 1000)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base-current
Total power dissipation at Tease ,,;25 D C
T amb ,,; 25 DC
Storage temperature
Junction temperature
55V
45V
70V 90V
60V 80V
5V
3A
5A
1A
40W
2W
-65 to 150 D C
150 D C
115V
100V
INTERNAL SCHEMATIC DlAGR~~'
MECHANICAL DATA
E
Dimensions in mm
5/80 70

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 3.13 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for BD 241 and BD 241A
current (Is = 0) VCE = 30V
for BD 241B and BD 241C
VCE = 60V
ICES Collector cutoff for BD 241 VCE = 45V
current (VSE = 0) for BD 241A VCE = 60V
for BD 241B VCE = BOV
for BD 241C VCE = 100V
IESO Emitter cutoff VES = 5V
current (Ic = 0)
VCEO (SUS)* Collector-em itter Ic = 30mA
sustaining voltage for BD 241
(Is = 0)
for BD 241A
for BD 241B
for BD 241C
VCE(sat) * Collector-emitter Ic = 3A Is = 0.6A
saturation voltage
VSE(on) * Base-emitter Ic = 3A VCE = 4V
voltage
hFE * DC current gain Ic = 1A VCE = 4V
Ic = 3A VCE = 4V
hIe Small signal Ic = 0.5A VCE = 10V
current gain f = 1KHz
Ic = 0.5A VCE = 10V
f = 1 MHz
Min. Typ. Max. Unit
0.3 rnA
0.3 rnA
0.2 rnA
0.2 rnA
0.2 rnA
0.2 rnA
1 rnA
45 V
60 V
BO
V
100 V
1.2 V
1.B V
25 -
10 -
20 -
3 -
* Pulsed: pulse duration = 300jLs, duty cycle "';;2%.
71

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 242, BO 242A, BO 242B and BO 242C are silicon epitaxial-base PNP
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary NPN types are the BO 241, BO 241A, BO 241 Band BO 241 C
respectively.
ABSOLUTE MAXIMUM RATINGS
B0242 B0242A B0242B B0242C
VCER
VCEO
VEBO
Ic
ICM
Is
Ptot
Collector-emitter voltage (RSE = 100D) -55V
Collector-emitter voltage (Is = 0) -45V
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base-cu rrent
Total power dissipation at Tease :::;25°C
Tamb :::;25°C
Storage temperature
Junction temperature
-70V -90V -115V
-60V -80V -100V
-5V
-3A
-5A
-1A
40W
2W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR~:~:
MECHANICAL DATA
Dimensions in mm
Co/lec.tor connected to tab.
···T0420
5/80 72

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 3.13 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for BO 242 and BO 242A
current (IB = 0) VCE = -30V
for BO 242B and BO 242C
VCE = -60V
ICES Collector cutoff for BO 242 VCE = -45V
current (VBE = 0) for BO 242A VCE = -60V
for BO 242B VCE = -SOV
for BO 242C VCE = -100V
lEBO Emitter cutoff VEB = -5V
current (Ic = 0)
V CEO (SUS)· Collector-em itter Ic = -30mA
sustaining voltage for BO 242
(lB = 0)
for BO 242A
for BO 242B
for BO 242C
VCE (sat)
. Collector-emitter Ic = -3A IB = -0.6A
saturation voltage
Min. Typ. Max. Unit
-0.3 mA
-0.3 mA
-0.2 mA
-0.2 mA
-0.2 mA
-0.2 mA
-1 mA
-45 V
-60 V
-SO
V
-100 V
-1.2 V
VBE * Base-emitter Ic = -3A VCE = -4V
voltage
-1.S
V
hFE * DC current gain Ic = -1A VCE = -4V
Ic = -3A VCE = -4V
hie Small signal Ic = -O.5A VCE = -10V
current gain f = 1KHz
Ic = -O.5A VCE = -10V
f = 1 MHz
25 -
10 -
20 -
3 -
• Pulsed: pulse duration = 300JLs, duty cycle ~2%.
73

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The BO 243, BO 243A, BO 243B and BO 243C are silicon epitaxial-base NPN
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary PNP types are the BO 244, BO 244A, BO 244B and BO 244C
respectively.
ABSOLUTE MAXIMUM RATINGS
B0243 B0243A B0243B B0243C
V CBO Collector-base voltage (IE =0)
VCEO Collector-emitter voltage (IB = 0)
VEBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current
IB Base current
Ptot Total power dissipation at Tease ~25°C
Tst9 Storage temperature
Tj Junction temperature
INTERNAL SCHEMATIC DIAGR:4 ,
45V
45V
60V 80V
60V 80V
5V
6A
10A
2A
65W
-65 to 150°C
150°C
100V
100V
MECHAN ICAl OAT A
E
Dimensions in mm
5/80 74

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.92 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for BO 243 and BO 243A
current (Is = 0) VCE = 30V
for BO 243B and BO 243C
VCE = 60V
ICES Collector cutoff for BO 243 VCE = 45V
current (VSE = 0) for BO 243A VCE = 60V
for BO 243B VCE = 80V
for BO 243C VCE = 100V
IESO Emitter cutoff VES = 5V
current (Ic = 0)
VCEO (sus) *Collector-emitter Ic = 30rnA
sustaining voltage for BO 243
(Is = 0)
for BO 243A
for BO 243B
for BO 243C
VCE (sat)* Collector-emitter Ic = 6A Is = 1A
saturation voltage
VSE * Base-emitter Ic = 6A VCE = 4V
voltage
hFE * DC current gain Ic = 0.3A VCE = 4V
Ic = 3A VCE = 4V
hIe Small signal Ic = 0.5A VCE = 10V
current gain f = 1KHz
Ic = 0.50 VCE = 10V
f = 1 MHz
Min. Typ. Max. Unit
0.7 rnA
0.7 rnA
0.4 rnA
0.4 rnA
0.4 rnA
0.4 rnA
1 rnA
45 V
60 V
80 V
100 V
1.5 V
2 V
30 -
15 -
20 -
3 -
* Pulsed: pulse duration = 300ILS, duty cycle .:;;2%.
75

EPITAXIAL-BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
The 80244, 80 244A, 802448 and 80 244C are silicon epitaxial-base PNP
power transistors in Jedec TO-220 plastic package intended for use in medium
power linear and switching applications.
The complementary NPN types are the 80243, 80 243A, 802438 and 80 243C
respectively.
ABSOLUTE MAXIMUM RATINGS
B0244 B0244A B0244B B0244C
VCBO
VCEO
VEBO
Ic
ICM
IB
Ptot
Tstg
Tj
Collector-base voltage (IE = 0) -45V
Collector-emitter voltage (lB = 0) -45V
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
8ase current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature
-60V -80V -100V
-60V -80V - 1 OOV
-5V
-6A
-10A
-2A
65W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR~4
MECHANICAL DATA
Dimensions in mm
5/80 76

THERMAL DATA
Rth j-ease
Rth j-amb.
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.92 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for BO 244 and BO 244A
current (Is = 0) VCE = -30V
for BO 244B and BO 244C
VCE = -60V
ICES Collector cutoff for BO 244 VCE = -45V
current (VSE = 0) for BO 244A VCE = -60V
for BO 244B VCE = -80V
for BO 244C VCE = -100V
IESO Emitter cutoff VES = -5V
current (Ic = 0)
VCEO (Sus)*Coliector-emitter Ic = -30mA
sustaining voltage for BO 244
(Is = 0)
for BO 244A
for BO 244B
for BO 244C
VCE (sat) * Collector-em itter Ic = -6A Is = -1A
saturation voltage
VSE * Base-emitter Ic = -6A VCE = -4V
voltage
hFE * DC current gain Ic = -0.3A VCE = -4V
Ic = -3A VCE = -4V
hie Small signal Ic = -0.5A VCE = -10V
current gain f = 1KHz
Ic = -0.5A VCE = -10V
f = 1 MHz
Min. Typ. Max. Unit
-0.7 mA
-0.7 mA
-0.4 mA
-0.4 mA
-0.4 mA
-0.4 mA
-1 mA
-45 V
-60 V
-80 V
-100 V
30
15
20
3
-1.5 V
-2 V
* Pulsed: pulse duration = 300jLs, duty cycle,,; 2%
77

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 433, BD 435 and BD 437 are silicon epitaxial-base NPN power transistors in
Jedec TO-126 plastic package, intended for use in medium power linear and switching
applications.
The BD '433 is especially suitable for use in car-radio output stages,
The complementary PNP types are the BD 434, BD 436 and BD 438 respectively,
ABSOLUTE MAXIMUM RATINGS
Vcso Collector-base voltage (IE = 0)
V CES Collector-emitter voltage (VSE = 0)
V CEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (t ,,;; 10ms)
Is Base current
P tot Total power dissipation at Tcase";;25°C
T stg Storage temperature
T j Junction temperature
BO 433BO 435 BO 437
22V 32V 45V
22V 32V 45V
22V 32V 45V
5V
4A
7A
lA
36W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
10/82 78

THERMAL DATA
Rth j-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.5 °C/W
100 °C/W
ELECTRICAL CHARACTERISTICS (T case
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff for 80433 VCB = 22V
current (IE = 0) for 80435 VCB = 32V
for 80437 VCB = 45V
ICES Collector cutoff for 80433 VCE = 22V
current (V BE = 0) for 80435 VCE = 32V
for 30437 VCE = 45V
lEBO Emitter cutoff V EB = 5V
current (lc = 0)
V CEO (sus)' Collector-emitter Ie = 100mA
sustaining voltage for 80433
(lB = 0) for 80435
for 80437
VCE (sat)' Collector-emitter Ie = 2A IB = 0.2A
saturation voltage for 80433
for 80435
for 80437
VBE , Base-emitter voltage Ie = 10 mA VeE = 5V
Ie = 2A VeE = 1V
for 80433
for 80435
for 80437
, hFE DC current gain Ic = 10 mA VCE = 5V
for 80433
for 80435
for 80437
Ie = 500mA VCE = 1V
Ic = 2A VeE = 1V
for 80433
for 80435
for 80437
hFE/ hFE2 'Matched pair Ie = 500mA VCE = 1V
fT Transition frequency Ie = 250mA VCE = 1V
100 I-\A
100 I-\A
100 I-\A
100 I-\A
100 I-\A
100 I-\A
1 mA
22 V
32 V
45 V
0.2 0.5 V
0.2 0.5 V
0.2 0.6 V
0.58 V
1.1 V
1.1 V
1.2 V
40 130 -
40 130
30 130 -
85 140 -
50 -
50 -
40 -
1.4 -
3 MHz
, Pulsed: pulse duration 300 f1s, duty cycle
79
1.5%

Safe operating areas
DC current gain
Ie
(A)
10
10-'
n
II
Ie MAX PULSED
Ie MAX CONTINUOUS
_~~lll'ERJJIC
~ "
De OPERATIONili ~ \+
* ~~~i~~T~VLEE P~~~E '\
~
B0437- I-
B0435= H
B0433~
10
I
I
* 10,"s
S
lm~!1
lOms
,
G-24 6
--- I--
-2
10
--
e 10 1 2
G 486511
veE =1 2V
I-
I
\
I
1
1\ II
!
NI
4 6' 4 6 ,
I Ie (A)
Ie
(A)
DC transconductance
VCE=IV
G - 24 0
•
VCE(sat
(V)
)
-.
Collector-emitter saturation voltage
G 870
I
3C mA I A 3A 4 J
4
\
I'
0.5
\
\
o
0.5
V
1.5
0.1
" " !--
-~
10 IBlmA)
80

~~
Transition frequency
Collector-base capacitance
IT
(MHz)
I--'
f..,..
VCE=1V
G-2423
CCBO
(p F)
G-'B71
10
"- "-
"' 1"\
,
10
I, I
I
I
1I1I I
I II ' I !
L
i
i
I
\
o
IC (A)
10
1
I
I
.
8
1 10
I
i'- ~!
II
I
Saturated switching characteristics
Power rating chart
t
(I-'s) 8
6
,
f': t-,....
t-...
VCC=30V
1161=-162
I hFE=10
ts
G-2422
Ptot
(W)
36
24
1'\
~
G 2415
~
t--....
1'\
1"-1\.
10- 1
" !'.... /Y'
ton
6 8
IC(Al
12
o
50 100
'\
81

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 434, BO 436 and BO 438 are silicon epitaxial-base PNP power transistors in Jedec
TO-126 plastic package, intended for use in medium power linear and switching applications.
The BO 434 is especially suitable for use in car-radio output stages.
The complementary NPN types are the BO 433, BO 435 and BO 437 respectively.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (t .;;; 10ms)
Base current
Total power dissipation at Tease';;; 25·C
Storage temperature
Junction temperature
BO 434 BO 436 BO 438
-22V
-22V
-22V
-32V
-32V
-32V
-5V
-4A
-7A
-1A
36W
-65 to 150·C
150·C
-45V
-45V
-45V
INTERNAL SCHEMATIC DIAG~~
MECHANICAL DATA
Oimensions in mm
10/82 82

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.S °C/W
100 °C/W
ELECTRICAL CHARACTERISTICS (Tease
2SoC unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
Icso Collector cutoff for 80434 Vcs= -22V
current (IE = 0). for 80436 Vcs= -32V
for 80438 Vcs= -4SV
ICES Collector cutoff for 80434 VCE = -22V
current (VSE = 0) for 80436 VCE = -32V
for 80438 VCE = -4SV
IESO Emitter cutoff V ES = -SV
current (lc = 0)
V CEO (sust Collector-emitter Ic = -1 OOmA for 80434
sustaining voltage for 80436
(Is = 0) for 80438
VCE (sat) * Collector-emitter Ic = -2A Is = -0.2A
saturation voltage for 80434
for 80436
for 80438
VSE * Base-emitter voltage Ic = -1 0 mA V CE = -SV
Ic = -2 A VCE = -1 V
for 80434
for 80436
for 80438
hFE * DC current gain Ic = -10mA VCE = -SV
for 80434
for 80436
for 80438
Ic = -SOOmA V CE = -1 V
Ic = -2 A VCE = -1V
for 80434
for 80436
for 80438
hFE/hFE2*Matched pair Ic = -SOOmA VcE =-1V
fT Transition frequency Ic = -2S0mA VCE = -1V
-100 I1A
-100 I1A
-100 I1A
-100 I1A
-100 I1A
-100 I1A
-1 mA
-22 V
-32 V
-4S V
-0.2 -O.S V
-0.2 -O.S V
-0.2 -0.6 V
-0.S8
V
-1.1 V
-1.1 V
-1.2 V
40 140 -
40 140 -
30 140 -
8S 140 -
SO -
SO -
40 -
1.4 -
3 MHz
* Pulsed: pulse duration 300 fis, duty cycle
83
1.S%

Safe operating areas
DC current gain
-IC
(AI
10
I
I
IC MAX PULSED
.~t u'tK'
.,
IC MAX CONTINUOUS
"
DC OPERATION ++r \\ ~
• ~~~ES;~~VLEE P~~~E
'\
~
.
lDl's
1 s
lmsll
lOms
G 246 7
~
,
2
10 ~
VC=2V
""-
---
,~
9D438- f--
9D436- I--<
to-I
9D434~
10
. , 6'
10.2 10-1
4 6'
IC(AI
-IC
(AI
DC transconductance
VCE--1V
G 243 9
Collector-emitter saturation
voltage
VCE{sat ) ,-'-'-rrn-m--'-'TlTrT1T--r-rTGT·4T'n"~
(V)
=1 'e 3A I
I
1.5
I
0.5
o
0.5
1/
1.5
o
10 10 2 'B(mA)
84

Transition frequency
Collector-base capacitance
IT
(MHz)
V,,~-1V
-
CCBO
(pF)
6
G -4683
15
10
I\.
" "
,
......
..........
1
I'\.
I
: i
o
10-'
10
10-'
, 6 • , 6'
I
II
4 68
10 -VCB(V)
I
(,us) 8
6
2
Saturated switching characteristics
I--
.....:
,...,.
""" t.... 6 8
V ee =-30V
IB1=-IB2
hFE=10
Is
t---.!.!..
Ion
.........
I'
G-2419
6 8
-Ie (A)
Plot
(W)
36
24
12
o
Power rating chart
I\.
I"
I"
1\
50 100
G -2415
" I"
150 Tcase("C)
85

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 439 and BD 441 are silicon epitaxial-base NPN power transistors in Jedec TO-126
plastic package, intended for use in power linear and switching applications.
The complementary PNP types are the BD 440 and BD 442 respectively.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
V CBO
T j Junction temperature
V CES Collector-emitter voltage (VBE = 0)
V CEO Collector-emitter voltage (lB = 0)
V EBO
Ie
ICM
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (t .;;; 10ms)
IB Base current ..
P tot
T stg
Total power dissipation at Tcase:';;;25°C
Storage temperature
BO 439 BO 441
60V 80V
60V 80V
60V 80V
5V
4A
7A
1A
36W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
10/82 86

THERMAL DATA
Rth j-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.5 °C/W
100 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff for B0439 VCB = 60V 100 flA
current (IE = 0) for B0441 VCB = 80V 100 f1A
ICES Collector cutoff for B0439 VCE = 60V 100 flA
current (V BE = 0) for B0441 VCE = 80V 100 flA
lEBO Emitter cutoff VEB = 5V 1 mA
current (Ic = 0)
V CEO (sus)* Collector-emitter Ic= 100mA for BO 439 60 V
sustaining voltage for BO 441 80 V
(lB = 0)
VCE(sat) * Collector-emitter Ic= 2A IB= 0.2A 0.8 V
saturation voltage
VBE * Base-emitter voltage Ic= 10 mA VCE = 5V 0.58 V
Ic= 2 A VCE = 1V 1.5 V
hFE * DC current gain Ic= 10 mA VCE = 5V
for BO 439 20 130 -
for BO 441 15 130 -
Ic= 500mA VCE = 1V
for BO 439 40 140 -
Ic= 2 A
for BO 441 40 140 -
VCE = 1V
for BO 439 25 -
for BO 441 15 -
hFE1 IhFE2 *Matched pair Ic= 500mA VCE = 1V 1.4 -
fT Transition frequency Ic= 250mA VCE = 1V 3 MHz
* Pulsed: pulse duration 300 fls, duty cycle 1.5%
87

Safe operating areas
DC current gain
IC
(A)
10
I
I
IC MAX PULSED
Ie MAX CONTINUDU
"" Jpt
"
"'
DC OPERATION ++t "\:
*FOR SINGLE NON
REPETITIVE PULSE
~"
G-24 5
I
I
*
1,..5-I-
IDqus
Ims
10'
~
VCE=2V
G 4865
\.
10
B0441
B0439
10ms
10
4 6 '16 1 2
4 6·'
1
\ I'
: i
~I
4 6 B
IC (mA)
IC
(A)
DC transconductance
VCE=lV
G-2440
VCE(sat
(V)
Collector-emitter saturation
voltage
)
:l(JmA 1 A 3A
G -4870
I
4A
4
\
\
o
0.5
1.5
0.5
0.1
\
-
\
...
-
10
....
(B(mA)
88

1
Transition frequency
Collector-base capacitance
'T
(MHz)
.- - .....
VCE=1V
G-2 3
CCBO
(pF)
G to 871
"-
"'-"-
'\.
\
10
I
2
10
o
-
IC (A)
10
4 • ,
1
r-...
,
10
, I!
II
4 6'
V CB (V)
I
(flS)'
Saturated switching characteristics
VCC=30V
IIB1=-IB2
hFE=10
"
1-1'--
, r-... Is
-.!.!.
.......
", .,/
Ion
G -2422
6 , 6 •
Ie (A)
Piol
(W)
36
24
12
o
Power rating chart
"
\
I'\.
I"'\.
"
50 100
"\
'\.
G -2415
150 Tcase("C)
89

EPITAXIAL·BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 440 and BO 442 are silicon epitaxial-base PNP power transistors in Jedec TO-126
plastic package intended for use in power linear and switching applications.
The complementary NPN types are the B0439 and B0441 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CES Collector-emitter voltage (VBE = 0)
VCEO Collector-emitter voltage (IB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (t ,;;:; 10ms)
IB Base current
P tot Total power dissipation at Tcase';;:;25°C
T stg Storage temperature
T j Junction temperature
SO 440 SO 442
-60V -80V
-60V -80V
-60V -80V
-5V
-4A
-7A
-1 A
36W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR~4:
MECHANICAL DATA
Dimensions in mm
7.8"'"'
...
N
M
o
M
0.9ma,
(0 Within this tegion the

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.5 °C/W
100 °C/W
ELECTRICAL CHARACTERISTICS (Tease
25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
-
Icso Collector cutoff for B0440 Vcs= -60V -100 !-LA
current (IE = 0) for BD442 Vcs= -80V -100 !-LA
ICES Collector cutoff for B0440 VCE = -60V -100 !-LA
current (VSE = 0) for B0442 VCE = -80V -100 !-LA
IESO Emitter cutoff V ES = -5V -1 mA
current (Ic = 0)
V CEO (sust Collector-emitter Ic = -100mA
sustaining voltage for BO 440 -60 V
(Is = 0) for BO 442 -80 V
VCE (sat)* Collector-emitter Ic
saturation voltage
= -2A Is = -0.2A -0.8 V
VSE * Base-emitter voltage Ic = -10mA VCE = -5V -0.58 V
Ic = -2 A VCE = -1V -1.5 V
hFE * DC current gain Ic = -10mA VCE = -5V
for BO 440 20 140 -
for BO 442 15 140 -
Ic
= -500mA V CE = -1 V
for BO 440 40 140 -
for BO 442 40 140 -
Ic = -2 A VCE = -1V
for BO 440 25 -
for BO 442 15 -
hFEt IhFE2 *Matched pair Ic = -500mA V CE = -1V 1.4 -
fT Transition frequency Ic = -250mA V CE = -1V 3 MHz
* Pulsed: pulse duration 300 !-Ls, duty cycle 1.5%
91

Safe operating areas
DC current gain
-IC
(A)
10
J
I
IC MAX PULSED
IC MAX CONTINUOU
DC OPERATIOJffi
*FOR SINGLE NON
REPETI T1VE PULSE
LSE JP

Transition frequency
Collector-base capacitance
IT
G 4683
(MHz )
I'.
Vr.=-W
)
15
10
I"\"
"' "' " I'\.
~
I
1
r
1
':1
r--......
!
i
I
I
.,..
1 I I
10
i : 1[ I , I
.
10-1 10
I I I I I1II
Saturated switching characteristics
Power rating chart
t
(1-'5) •
6
G-2.t.19
Ptot
(W)
G 2415
VeC =-30V
IB1=-IB2
h FE=10
36
I\.
2
I--
Is
~ .......
f': ........ .......
"'" r-.... ~
Ion
24
12
1'\ 1,\
I\.
1,\
6 • 6 •
-Ie (A)
o
50 100
93

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 533, BD 535 and BD 537 are silicon epitaxial-base NPN power transistors in
Jedec TO-220 plastic package, intended for use in medium power linear and switching
applications.
The complementary PNP types are the BD 534, BD 536 and BD 538 respectively.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector and emitter current
Base current
Total power dissipation at Tcase";;;25°C
Storage temperature
Junction temperature
BD 533 BD 535 BD 537
45V 60V 80V
45V 60V 80V
45V 60V 80V
5V
8A
1A
50W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
10/82 94

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.5 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease
25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
Icso Collector cutoff for 80533
current (IE = 0) for 80535
for 80537
ICES Collector cutoff for 80533
current (V BE = 0) for 80535
for 80537
lEBO Emitter cutoff VES = 5V
current (lc = 0)
Vcs= 45V 100 [LA
Vcs = 60V 100 [LA
Vcs= SOV 100 [LA
VCE = 45V 100 [LA
VCE = 60V 100 [LA
V CE = SOV 100 [LA
1 rnA
V CEO (sus)* Collector-emitter
sustaining voltage
(Is = 0)
Ic
= 100mA
for 80533 45 V
for 80535 60 V
for 80537 SO V
VCE (sat)* Collector -em itte r Ic = 2A
saturation voltage Ic = 6A
VSE * Base-emitter voltage Ic =2A
Is = 0.2A O.S V
Is = 0.6A O.S V
VCE = 2 V 1.5 V
hFE * DC current gain Ic = 10 mA
Ic = 500mA
Ic =2A
VCE = 5V
for 80533 20 -
for 80535 20 -
for 80537 15 -
VCE = 2V 40 -
VCE = 2V
for 80533 25 -
for 80535 25 -
for 80537 15 -
fT Transition frequency Ic = 500mA
hFE groups**: J Ic = 2A
Ic = 3A
K Ic = 2A
Ic = 3A
VCE = 1V 3 12 MHz
VCE = 2 V 30 75 -
VCE = 2 V 15 -
VCE = 2 V 40 100 -
VCE = 2 V 20 -
* Pulsed: pulse duration
** Only on request
300 [Ls, duty cycle
1.5%
95

Safe operating areas
DC current gain
&-2484
II II
I I I1111
PULSE OPERATION* lit ,0::",.::=,=i= __ ==J
VCE=2V
G-2486
DC OPERATION 1m.
*FOR SINGLE NON
REPETITIVE PULSE
I ~\
1\ '\-

Transition frequency
Collector-base capacitance
IT
(MHz)
I-"'" .......
VCE=IV
G-2423
CCBO,
(pF)
G 2424
'" .'\.
"
'\.
\
10
10'
I"-
r--.....
.......
IC (A)
10
4 , • , 4 6.
10-1 10 VCB (V)
Saturated switching characteristics
Power rating chart
t
(1-'5)6
VCC=30V
G 2492
Ptot
(W)
G 2495
f': l-
t'-..
i
IBl=-IB2
hFE=10
...... ts
...!!.
!"-..
....... ./
"
Ion
~
50
40
30
20
10
~
I"
I"
" l'- I"
"'-[\,
"'-"'-
10-1
IC (A)
0
50 100
97

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 534, BD 536 and BD 538 are silicon epitaxial-base PN P power transistors in Jedec
TO-220 plastic package, intended for use in medium power linear and switching applications.
The complementary NPN types are the BD 533, BD 535 and BD 537 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CES Collector-emitter voltage (VBE = 0)
VCEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic, IE Collector and emitter current
IB Base current
P tot Total power dissipation at Tcase";:;25°C
T stg Storage temperature
T j Junction temperature
SO 534 SO 536 SO 538
-45V
-45V
-45V
-60V
-60V
-60V
-5V
-8A
-1A
50W
-65 to 150°C
150°C
-80V
-80V
-80V
INTERNAL SCHEMATIC DIAGR~4:
MECHANICAL DATA
Dimensions in mm
« ~~ '; , '/'
-i"",<
10/82 98

THERMAL OAT A
Rlh j-ease
Rlh j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.5 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO Collector cutoff for B0534 VCB = -45V
current (IE = 0) for B0536 VCB = -60V
for B0538 VCB = -80V
ICES Collector cutoff for B0534 VCE = -45V
current (VBE = 0) for B0536 V CE = -60V
for B0538 VCE = -80V
lEBO Emitter cutoff VEB = -5V
current (Ie = 0)
V CEO (SUS)* Collector-emitter Ie = -100mA for BO 534
sustaining voltage for BO 536
(lB = 0) for BO 538
VCE (sal) * Collector-emitter Ie = -2A IB = -0.2A
saturation voltage Ie = -6A IB = -0.6A
VBE * Base-emitter voltage Ie = -2A VCE = -2 V
hFE * DC current gain Ie = -10 mA VCE = -5V
for BO 534
for BO 536
for BO 538
Ie
Ic
= -500mA V CE = -2V
= -2 A VCE = -2V
for BO 534
for BO 536
for BO 538
fT Transition frequency Ic = -500mA VCE = -1V
hFE groups**: J Ic = -2A VCE = -2 V
Ie = -3A VCE = -2 V
K Ic = -2A VeE = -2 V
Ie = -3A VeE = -2 V
-100 fLA
-100 fLA
-100 fLA
-100 fLA
-100 fLA
-100 fLA
-1 rnA
-45 V
-60 V
-80 V
-0.8 V
-0.8 V
-1.5 V
20 -
20 -
15 -
40 -
25 -
25 -
15 -
3 16 MHz
30 75 -
15 -
40 100 -
20 -
* Pulsed: pulse duration
** Only on request
300 [Ls, duty cycle 1.5%
99

Safe operating areas
DC current gain
10
G-2485
IT TIll
ITI I I IIII
PULSE OPERATION 'l:I'0;="'S=l--~
G-2487
VCE=-2V
DC OPERATION ~
I
*FOR SINGLE NON
REPETITIVE PULSE
lms
lOms
10'
~ ~ , .. 4
10~
10
80538
80536
80534-
10
10-'
••
1
•••
-ICIA)
-VCE(sat)
(V) • ,
,
,
•
,
,
Collector-emitter saturation
voltage
17
-'"
hFE"'0
1/
/
[;7
G-248
(V)
1.5
o.s
t)
Base-emitter saturation
voltage
.....
L.,..
hFE=10
L---
V
2491
••
• •
-ICIA)
o
100

Transition frequency
Collector-base capacitance
IT
(MHz )
VCE"-lV
-
CCBO
(pF).
15
.....
"\. '\.
"\.
"\.
10
la'
"\.
a
10
• •• ••• .. ,
10 -VCB(Vl
Saturated switching characteristics
Power rating chart
I
(,us)'
G-249
Piol
(W)
G-2 49S
I--
I'.
V CC =-30V
[61=-162
hFE=10
Is
" ,
....... r--.. r-.!! ),
Ion
..
-[C(A)
50
30
20
10
o
1,,\
" "
r\.
" " I" "\
I 1,,\
1,,\
50 100
101

EPITAXIAL-BASE NPN
MEDIUM POWER DARLINGTONS
The BD 675A, BD 677, BD 677A, BD 679, BD 679A and BD 681 are silicon epitaxial-base
NPN power transistors in monolithic Darlington configuration and are mounted in Jedec
TO-126 plastic package. They are intended for use in medium ppwer linear and switching
applications. The complementary PNP types are the BD 676A, BD 678, BD 678A, BD 680,
BD 680A and BD 682 respectively.
ABSOLUTE MAXIMUM RATINGS B0675A B0677 B0679 B0681
B0677 A B0679A
Vcso Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current (repetitive)
Is Base current
P tot Total power dissipation at Tcase';;;25°C
T stg Storage temperature
T j Junction temperature
45V
45V
60V 80V
60V 80V
5V
4A
6A
100mA
40W
-65 to 150°C
150°C
100V
100V
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
c
,-------1
B I I
I
I R I
L_,_._._._._.~ ~n~~g~fi
S·103611 E
Dimensions in mm
" ,
, (llwlij;mthl~"""",!",,, ... ~,,,,,'of ';, .... d. i.""";n'r~lI.« TO-12EHSOl-321
10/82 102

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.12 ~C/W
100 °C/W
ELECTRICAL CHARACTERISTICS (T case
2SoC unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max.
Unit
Icso Collector cutoff for B0675A Vcs = 4SV
current (IE = 0) for B0677/677 A V cs = 60V
for B0679/679A Vcs= BOV
for B0681
Vcs~ 100V
ICEO Collector cutoff for B0675A VCE = 22V
current (Is = 0) for B0677/677A VCE = 30V
for B0679/679A VCE = 40V
for B0681 VCE = SOV
IESO Emitter cutoff VES = S V
current (Ic = 0)
VCEO(SUS) * Collector-emitter Ic = SO mA
sustaining voltage
for B0675A
(Is = 0)
for B0677/677A
for B0679/679A
for B0681
VCE(satt Collector-emitter for B0677/679/681
saturation voltage Ic = 4A Is = 40 mA
for B0675A/677A/679A
Ic = 2A Is = BmA
VSE * Base-emitter voltage for B0677/679/681
Ic = 1.SA VCE = 3V
for B0675A/677A/679A
Ic = 2A
VCE = 3V
hFE * DC current gain for B0677/679/681
Ic = 4A VCE = 3V
for B0675A/677 A/679A
Ic = 2A VCE = 3V
200 [LA
100 [LA
200 fLA
200 [LA
SOO [LA
100 [LA
SOO [LA
SOO [LA
2 mA
4S
V
60 V
80 V
100 V
2.7 V
2.8 V
2.S V
2.S V
110 -
7S0 -
i hfe
Small signal Ic = 1.SA VCE = 3V
current gain
f = 1 MHz
1 -
* Pulsed: pulse duration 300 [Ls, duty cycle
103
1.5%

Safe operating areas
IC
(A)
Ic MAX (PULSED)
*PULSE OP RAT ION
\ ~
IC MAX (CONTINUOUS \ \
f\.\ \ i\
DC OPERATION~ ~ \
-
. -T·· ITnnr-- ~
,
~
FOR SINGLE NON
f--- REPETITIVE PULSE
G 2743
10}Js-I--
100)J2
-
\.
BD677 -
BD679 -
BD675) 1-
BD677A
BD679A
BDr1
1ms-f--
10ms
10
10' VCE(V)
DC current gain
DC transconductance
hFE •
G -2757
IC
(A)
G -2740
II
10'
/
/"
/ "cE·3V
'" 1\
VCE =3V
I
I
10'
..
Ie (A)
0.5
1/
1.5 VeE (V)
104

YCE(sat )
(Y)
Collector-emitter saturation
voltage
°G261.5
Collector-emitter saturation
voltage
)
1\
G_274G
hFE=250
1.5
\
le=3A
I
2A
..-'"
./
0.5
lA
0.5
o
'8 (rnA)
Small signal current gain
Saturated switching characteristics
c;~ 275
S
I
(~s)
G-275911
YCE =3Y
lC=t5A
'" \
Is
Vec=30V
hFE=250
181=-182
:;>00---
10
,
-If
on
-
.....
4 68
f (MHz)
Ie (A)
105

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTONS
The SO 676A, SO 678, SO 678A, SO 680, SO 680A and SO 682 are silicon epitaxial-base
PNP power transistors in monolithic Darlington configuration and are mounted in Jedec
TO-126 plastic package. They are intended for use in medium power linear and switching
applications. The complementary NPN types are the SO 675A, SO 677, SO 677 A, SO 679,
SO 679A and SO 681 respectively.
ABSOLUTE MAXIMUM RATINGS B0676A B0678 B0680 B0682
B0678A B0680A
Vcso Collector-base voltage (IE = 0) -45V
T j Junction temperature
VCEO
V ESO
Ic
ICM
Is
P tot
T stg
Collector-emitter voltage (Is = 0) -45V
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (repetitive)
Sase current
Total power dissipation at Tcase~25°C
Storage temperature
-60V -80V
-60V -80V
-5V
-4A
-6A
-100mA
40W
-65 to 150°C
150°C
-100V
-100V
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
c
,-------1
B i I
I
I
I
I 1 R2 I
L_~ ____ ~ R1Typ.lOkIl
R2Typ. 150A
Dimensions in mm
10/82 106

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.12 °C/W
100 °C/W
ELECTRICAL CHARACTERiStiCS (Tease
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO Collector cutoff for B0676A VCB = -45V
current (IE = 0) for B0678/678A V CB = -60V
for B0680/680A VCB = -SOV
for B0682 VCB = -100V
ICEO Collector cutoff for B0676A VCE = -22V
current (lB = 0) for B0678/678A V CE = -30V
for B0680/680A V CE = -40V
for B0682 VCE = -50V
lEBO Emitter cutoff VEB = -5 V
current (Ic = 0)
-200 [lA
-100 [lA
-200 [lA
-200 [lA
-500 [lA
-100 fLA
-500 fLA
-500 [lA
-2 rnA
VCEO(SUS)* Collector-emitter
sustaining voltage
(lB = 0)
Ic = -50 mA
for B0676A
for B0678/678A
for B0680/680A
for B0682
-45 V
-60 V
-SO
V
-100 V
VCE (sat)* Collector-emitter for B0678/680/682
saturation voltage Ic = -4A IB = -40mA
for B0676A/678A/680A
Ic = -2A
IB = -SmA
VBE * Base-emitter voltage for B0678/680/682
Ic = -1.5A VCE = -3V
for B0676A/678A/680A
Ic = -2A VCE = -3V
hFE * DC current gain for B0678/680/682
Ic = -4A VCE = -3V
for B0676A/678A/680A
Ic = -2A VCE = -3V
hie Small signal Ic =-1.5A VCE = -3V
current gain f = 1 MHz
-2.7 V
-2.8 V
-2.5 V
-2:5 V
110 -
750 -
1 -
* Pulsed: pulse duration 300 [ls, duty cycle
107
1.5%

Safe operating areas
-Ic
(A)
Ic MAX (PULSED)
"'PIli E 'lPER TI
,
I IC MAX (CONTINUOUS \ \
II III\. \ \ ~
OC OPERATlON~ ~ ~
~ IIIIIII
~
,... FOR SINGLE NON ~
1=== REPETITIVE PULSE
~
"
B0676~ -
B0678 - B0678A
B0680 - B0680
G -2742
10ps-f--
100us
1ms--
BOrO!
10ms
10
IO~
-VCE(V)
DC current gain
DC transconductance
,
6
0-2754
-Ie
(A)
I
G-274\
II
4
2
/
10'
,
V
i""-..
V 1\
VCE "-3V
vCE=-3V
6
4
II
,
10'
6 ,
6 ,
-lC (A)
0.5
1.5 -VBE (V)
108

-veE(sat)
(V)
Collector-emitter saturation
voltage
I
I
hFE:250
G-26~
-VCE(sat )
(V)
1.5
Collector-emitter saturation
voltage
t--..
G-27S0
·1 :3'"
2~
~ -
I
f'--- --9-
I
------
..,1/
0.5
lA
0.5A
-Ie (A)
-16 (mA)
Small signal current gain
Saturated switching characteristics
B
B
,
G 2755
I
(I's)
G-27Sfi/l
2
10' B
B
,
2
le:-1.5A
VeE:-3V
I"'"
It
Vce=-30V
hFE'i'250
16,=-162
10 2 B
B
,
2
10 B
1\
s
on
I'....
B
4
2
" 6 8 2 4 S B 46 B 2 468
10-2 10-1 1 f (MHz)
-Ie (A)
109

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The B0705, B0707, B0709 and B0711 are silicon epitaxial-base NPN power transistors
in Jedec TO-220 plastic package intended for use in power linear and switching
applications.
The complementary PNP types are the B0706, B0708, B071 0 and B0712 respectively.
ABSOLUTE MAXIMUM RATINGS
80705 B0707 B0709 B0711
Vcso Collector-base voltage (IE = 0)
V CES Collector-emitter voltage (V SE = 0)
V CEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (lc = 0)
Ic Collector current
Is Base current
P tot Total power dissipation at Tcase";;;;;25°C
- T stg Storage temperature
T j Junction temperature
45V
45V
45V
60V 80V
60V 80V
60V 80V
5V
12A
5A
75W
-65 to 150·C
150·C
100V
100V
100V
INTERNAL SCHEMATIC DIAGR~
MECHANICAL DATA
Oimensions in mm
10/82 110

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
1.67 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (T case
25°C unless otherwise specified)
Parameter Test conditions Min_ Typ. Max. Unit
ICBO Collector cutoff for B0705 VCB = 45 V 100 [LA
current (IE = 0) for B0707 VCB = 60 V 100 [LA
for B0709 VCB = 80 V 100 [LA
for B0711 VCB = 100 V 100 [LA
T case = 150°C
for B0705 VCB = 45 V 1 mA
for B0707 VCB = 60 V 1 mA
for B0709 VCB = 80 V 1 mA
for B0711 VCB = 100 V 1 mA
IcEO Collector cutoff for B0705 VCE = 22 V 1 mA
current (IB = 0) for B0707 VCE = 30 V 1 mA
for B0709 VCE = 40 V 1 mA
for B0711 VCE = 50 V 1 mA
lEBO Emitter cutoff VEB = 5 V 1 mA
current (Ic = 0)
V CEOCsus) * Collector-emitter Ic = 100 mA
sustaining vOltage for B0705 45 V
(IB = 0) for B0707 60 V
for B0709 80 V
for B0711 100 V
V CECsat) * Collector-emitter Ic =4A IB = 0.4 A 1 V
saturation voltage
VCEK * Knee voltage Ic = 3A IB = ** 0.4 V
VBE * Base-emitter voltage Ic = 4A VCE = 4V 1.5 V
111

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
hFE * DC current gain Ic = 0.5A VCE = 2V 40 120 400 -
Ic = 2A VCE = 2V
for B0705 30 -
for B0707 30 for B0709 30 -
Ic = 4A VCE = 4V
for B0705 20 30 150 for B0707 15 150 -
for B0709 15 150 for B0711 15 150 -
Ic = 10A VCE = 4V
for B0705 5 10 -
for B0707 5 10 -
for B0709 8 -
for B0711 8 -
fT Transition frequency Ic =300mA VCE = 3V 3 MHz
* Pulsed: pulse duration = 300 f1s, duty cycle 1.5%
** Value for which Ic = 3.3 A at VCE = 2 V
Safe operating areas Ie
II I III I
(Al
10
Ie MAX
oe OPERATION
6FOR SINGLE NON
REPETITIVE PULSE
PULSE OPERATION*
""
"
G-2468
lOps
.... lOL s
"- "'" ~
\ \
lms
\
10ms
10-1
8070
80707
80709
80711
10
112

DC current gain
DC transconductance
,
G 4859
VBE(on
(V)
)
G t. 663
2
3
10
,•
,
·
2
,
2
10
• ,
VCE - 4V
I
VeE = 4V
./
I
I
II
-2 2 468 -1 2 469
10 10 1 10
, "'
IC(AI
o
-,
10
10
VCE(sat )
(V) ,
10 •
Collector-emitter saturation voltage
hFE= 10
I
G
4&6
•
Transition frequency
IT
(MHz)
VCE=3V
G-2427
,
2
-,
10.
i
I
I
I
i
;/
,
4
.-- ...........
r-....
"
-,
10
, &8
" .
10
46 e 22
10
o
10-1
113

Collector-base capacitance
Saturated switching characteristics
eeso
(pF)
150
G· '1'0
)
Vee=30V
IS1=-IS2
hFE= 10
G- 4861
100
50
"-
I'..
"
1 2
Is
....-- t....;;.. If
- Ion
o
-,
10
10 Ves (V)
10' • • ••
Ie (A)
P'o'
(w)
Power rating chart
H2397
75
'-
50
"\
25
"- I\..
r\.
o
50
100
"\
"\
150 Tcase("c)
114

EPITAXIAL·BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
Ttie 80706,80708,80710 and 80712 are silicon epitaxial-base PNP power transistors in
Jedec TO-220 plastic package, intended for use in power linear and switching applications.
The complementary NPN types are the 80705, 80707, 80709 and 80711 respectively.
ABSOLUTE MAXIMUM RATINGS B0706 B0708 B0710 B0712
\/-CBO Collector-base voltage (IE = 0)
V CES Collector-emitter voltage ~V BE = 0)
VCEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
IB 8ase current
P tot Total power dissipation at T case ",:;25'C
T stg Storage temperature
T j Junction temperature
INTERNAL SCHEMATIC DIAGR:4 :
-45V
-45V
-45V
-60V -80V
-60V -80V
-60V -80V
-5V
-12A
-5A
75W
-65 to 150'C
150'C
-100V
-100V
-100V
MECHANICAL DATA
Oimensions in mm
Collector connected to tab.
115
10/82

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
1.67 'C/W
70 'C/W
ELECTRICAL CHARACTERISTICS (Tease
25'C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff for B0706 V CB = -45 V -100 /-LA
current (IE = 0) for B0708 V CB = -60 V -100 /-LA
for B0710 V CB = -80 V -100 /-LA
for B0712 V CB = -100 V -100 /-LA
Tease = 150'C
for B0706 VCB = -45 V -1 rnA
for B0708 VCB = -60 V -1 rnA
for B0710 V CB = -80 V -1 rnA
for B0712 VCB = -100 V -1 rnA
ICEO Collector cutoff for B0706 VCE = -22 V -1 rnA
current (IB = 0) for B0708 VCE = -30 V -1 rnA
for B0710 VCE = -40 V -1 rnA
for B0712 VCE = -50 V -1 rnA
lEBO Emitter cutoff VEB = -5 V -1 rnA
current (lc = 0)
V CEO(sus) * Collector-emitter Ic = -100mA
sustaining voltage for B0706 -45 V
(lB = 0) for B0708 -60 V
for B0710 -80 V
for B0712 -100 V
VCE(sat) * Collector-emitter Ic
saturation voltage
= -4 A IB = -0.4 A -1 V
VCEK * Knee voltage Ic = -3A IB = ** -0.4 V
VBE * Base-emitter voltage Ic = -4A VCE = -4V -1.5 V
116

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
hFE * DC current gain Ic
Ic
= -0.5A
= -2A
VCE = -2V
VCE = -2V
for 80706
for 80708
for 80710
Ic = -4A VCE = -4V
for 80706
for 80708
for 80710
for 80712
Ic = -lOA VeE = -4V
for 80706
for 80708
for 80710
for 80712
fT Transition frequency Ic = -300mA V CE = -3V
Min. Typ. Max. Unit
40 120 400 -
30 -
30 -
30 -
20 30 150 -
15 150 -
15 150 -
15 150 -
5 12 -
5 12 -
8 -
8 -
3 MHz
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
** Value for which Ic = -3.3 A at VCE = -2 V
Safe operating areas
II
I III I
G-246S
10
IC MAX
PULSE OPERATlON*
10J.Js
"- I'-.
DC OPERATION 1"-
I I ~ iii
*FOR SINGLE NON
REPETITIVE PULSE
\ 1\
1ms
~
10ms
BD7
B0708
B0710
B0712
10
117

DC current gain
DC transconductance.
VBE(on
(V)
) I
1
11
IJ
G 4&53
VcE=4
'0'1111"l1li
./
-,
'0
468 -1 2 468
'0
468 2 468
'0 le(A)
'0
VCE(sat)
(V)
Collector-emitter saturation
voltage
~~~~II~~~~~~~~~G!-~4~"~'1I
Transition frequency
IT
(MHz) VeE""-3
6
L.--'
G -2426
5
4
............
.......
uj "OL_,-l-L,Ll..L, W,lL, --.J...ll...L, J..!,JJ,JL,o-L-L.l., .L,LL,Ul, o-,...ll.., ...Ll~.Le.ll( ~w)
o
-Ie (A)
118

eeso
(pF )
Collector-base capacitance
G '656
I
(1'5)
Saturated switching characteristics
G -, 857
Vee- 30V
- Ie,=lS2
f---- hFE=10
200
100
\
"-1'\
r--..
Is
V -...... If
-
'-
Ion
10
Ves (V)
-I
10
Plot
(W)
Power rating chart
G -2391
75
'\.
50
25
o
" "
1'\
50 100
" "
I"\,
119

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The BO 905, BO 907, BO 909, BO 911 are silicon epitaxial-base NPN power transistors in
Jedec TO-220 plastic package. They are intended for use in power linear and switching
applications.
The complementary PNP types are the BO 906, BO 908, SO 91 0 and BO 912 respectively.
ABSOLUTE MAXIMUM RATINGS B0905 B0907 B0909 B0911
VC80 Collector-base voltage (IE = 0) 45V 60V 80V 100V
VCEO Gollector-emitter voltage (18 = 0) 45V 60V 80V 100V
VE80 Emitter-base voltage (lc = 0) 5V
IE' Ic Emitter and collector current 15A
18 Base current 5A
P tot Total power dissipation at T case";;; 25°C 90W
T stg Storage temperature -65 to 150°C
T J Junction temperature 150°C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Oimensions in mm
10/82 120

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.4 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 2S'C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
Icso Collector cutoff for 80905 Vcs= 4SV
current (IE = 0) for 80907 Vcs= 60V
for 80909 Vcs= 80V
for 80911 Vcs = 100V
T case = lS0'C
for 80905 Vcs= 4SV
for 80907 Vcs= 60V
for 80909 Vcs= 80V
for 80911 Vcs = 100V
SOO
SOO
SOO
SOO
S
S
S
S
fLA
fLA
fLA
fLA
rnA
rnA
rnA
rnA
ICEO Collector cutoff for 80905 VCE = 30V
current (Is = 0) for 80907 VCE = 30V
for 80909 VCE = 40V
for 80911 VCE = SOV
IESO Emitter cutoff VES = SV
current (Ic = 0)
V CEO (sus)* Collector-emitter Ic = 100mA
sustaining voltage for 80905
(Is = 0) for 80907
for 80909
for 80911
VCE (sat)* Collector-emitter Ic = SA Is = O.SA
saturation voltage Ic = lOA Is = 2.SA
VSE (sat)* Base-emitter Ic = lOA Is = 2.SA
saturation voltage
VSE * Base-emitter voltage Ic = SA VCE = 4V
hFE * DC current gain Ic = O.SA VCE = 4V
Ic = SA VCE = 4V
Ic = lOA VCE = 4V
fr Transition frequency Ic = O.SA VCE = 4V
1 rnA
1 rnA
1 rnA
1 rnA
1 rnA
4S
V
60 V
80 V
100 V
1 V
3 V
2.S V
1.S V
40 2S0 -
lS lS0 -
S -
3 MHz
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.S%
121

Safe operating areas
DC current gain
'CMAX
*PULSE OPERATION
1111
*FOR SINGLE NON
REPETITIVE PULSE
10.~18!t1 ..
10-1
, 6 •
10
, 6'
VCE (V)
-2
10
" 68 _12 46 B
10 1
, 6.
10
, "
'C(A)
VCE =4V
• 10'
I
I
I
10 8
hFE= 10
I
DC transconductance
Collector-emitter saturation voltage
VBE(on
(V)
)
G 4663
VCE(sat )
(V) ,
G 4&64
6
,
V
2
-,
10.
,/
o
-,
10
10
-2
10
'6 •
10
468 22
10
, "
'C(A)
122

Base-emitter saturation voltage
Transition frequency
VBE(sat
(V)
)
G
48S6
IT
(MHz)
G -2612
hFElU
II
I
VCp4V
1.5
./
..........
./
.;'
......
0.5
16'
10
IC
(A)
Collector-base capacitance
Power rating chart
eeBO
(pF)
G 10860
Ptot
(W)
G.,1 644
150
120
\.
100
"-
90
1'-
"
60
50
.........
30
r-....
o
"- i'.
10
Vee (V)
50 100
150 Tease (DC)
123

EPITAXIAL-BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
The SO 906, SO 908, SO 91 0 and SO 912 are silicon epitaxial-base PNP power transistors
in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary NPN types are the SO 905, SO 907, SO 909 and SO 911 respectively.
ABSOLUTE MAXIMUM RATINGS B0906 B0908 B0910 B0912
Collector-base voltage (IE = 0) -45V
Collector-emitter voltage (Is = 0) -45V
Emitter-base voltage (Ic = 0)
Emitter and collector current
Sase current
Total power dissipation at Tease';; 25°C
Storage temperature
Junction temperature
-60V -80V
-60V -80V
-5V
-15A
-5A
90W
-65 to 150°C
150°C
-100V
-100V
INTERNAL SCHEMATIC DlAGR~~_~r
MECHANICAL DATA
E
Oimensions in mm
10/82 124

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.4 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25'C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff for B0906 V CB = -45V
current (IE = 0) for B0908 VCB = -60V
for B0910 VCB = -80V
for B0912 VCB = -100V
T case = 150'C
for B0906 VCB = -45V
for B0908 VCB = -60V
for B0910 VCB = -80V
for B0912 VCB = -100V
ICEO Collector cutoff for B0906 VCE = -30V
current (lB = 0) for B0908 VCE = -30V
for B0910 VCE = -40V
for B0912 VCE = -50V
lEBO Emitter cutoff V EB = -5V
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = -100mA
sustaining voltage
for B0906
(IB = 0)
for B0908
for B0910
for B0912
V CE (sat)* Collector-emitter Ic = -5A IB = -0.5A
saturation voltage Ic = -10A IB = -2.5A
-500 flA
-500 flA
-500 flA
-500 flA
-5 rnA
-5 rnA
-5 rnA
-5 rnA
-1 rnA
-1 rnA
-1 rnA
-1 rnA
-1 rnA
-45 V
-60 V
-80 V
-100 V
-1 V
-3 V
VBE (sat) * Base-em itte r
saturation voltage
Ic = -10A IB = -2.5A
-2.5 V
VBE * Base-emitter voltage Ic = -5A VCE = -4V
hFE * DC current gain Ic = -0.5A VCE = -4V
Ic = -5A VCE = -4V
Ic = -10A VCE = -4V
fT Transition frequency Ic = -0.5A VCE = -4V
-1.5 V
40 250 -
15 150 -
5 -
3 MHz
* Pulsed: pulse duration = 300 fls, duty cycle = 1.5%
125

Safe operating areas
DC current gain
G 2621
_IC'~_
(A)'~
10
ICMAX *PULSE OPERATION
'1'\.IOms
~ O~~ION~1'x -
10 I's
1001's
Ims
10 3 ,_.._
Vr , .4 V
II III
*FOR SINGLE NON
REPETITIVE PULSE
I
10' __
f--+-++-I~g ~g~-
1--+-++lBO 91 0
BO 912 -+---+--ll-H+AI
10-' L_LW--L ___-'---...Lllll..lJl1L_-.L-L...LJLU.llJ
4 68 8 4 68
10 10' -VCE (V)
10, .._
-22 468 _, 2 46 B
10 10 10
4 "
IC (A)
DC transconductance
Collector-emitter saturation voltage
VBE(on
(V)
)
VCE=4
I
I
II
G' 4153
VCE(sal )
(V)
4
,
10
, 8
4
,
hFE"1
8
,
'1
./
I
4
2
10'
,
8
-,
10'
10
4 68
1
limn
4 ,.
10
4 "
Ic(A)
126

Base-emitter saturation voltage
Transition frequency
VSE(sat )
(V)
I
II
II
G 4654
IT
(MHz)
VCE=-4V
G-Z613
hFE,10
'" ,\
-IC (A)
/""
- -
v
.......-
V
/"
10
o
Collector-base capacitance
Power rating chart
ccso
(pF )
G - 4856
Ptot
(W)
G-261o'('
\.
\,.
'\
120
200
90
"-
"
I'\..
100
'-
60
30
r-....
lI'\..
10 Vee (V)
50 100
150 Tease (Oe)
127

EPITAXIAL-BASE NPN I PNP
POWER DARLINGTONS
The BDV65, BDV65A, BDV65B, are silicon epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in SOT -93 plastic package. They are intended for
use in power linear and switching applications.
The complementary PNP types are BDV64, BDV64A, BDV64B respectively.
ABSOLUTE MAXIMUM RATINGS
* PNP BDV64 BDV64A BDV64B
NPN BDV65 BDV65A BDV65B
V CBO Collector-base voltage (I E = 0)
V CEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current (repetitive)
IB Base current
P tot Total power dissipation at T case .;;;; 25°C
Tstg Storage temperature
T j Junction temperature
60V 80V 100V
60V 80V 100V
5V
12A
20A
0.5A
125W
-65 to 150°C
150°C
* For PNP types voltage and current values are negative
INTERNAL SCHEMATIC DIAGRAMS
NPN
R1 '" 5K!1
R2'" 150Tl.
c
PNP i-----~--1
• I
I
I
I
I
I R1 "'5K!1
L ________ ~ ___ J R2 '" 150!1
MECHANICAL DATA
Dimensions in mm
GoliectorcOrIne.cted to tab.
(sim. torO:"218ISor~93
10/82
128

THERMAL DATA
R th j-ease Thermal resistance junction--case max. 1 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max_ Unit
ICBO Collector cutoff for BDV64/S V CB = 60V 400 pA
t:urrent (I E = 0) for BDV64A/SA V CB = 80V 400 pA
for BDV64B/SB V CB = 100V 400 pA
T case = 150°C
for BDV64/6S V CB = 30V 2 mA
for BDV64A/SA V CB = 40V 2 mA
for BDV64B/SB V CB = 50V 2 mA
ICEO Coller:tor cutoff for BDV64/6S VCE = 30V 1 mA
current (I B = 0) for BDV64A/SA V CE = 40V 1 mA
for BDV64B/5B V CE = 50V 1 mA
iEBO Emitter cutoff V EBO = 5V 5 mA
current (Ic = 0)
V CEO (susi Collector-emitter Ic= 30mA
sustaining voltage for BDV64/65 60 V
(lB = 0) for BDV64A/SA 80 V
for BDV64B/SB 100 V
VCE(Sat) * Collector-emitter Ic = 5A IB = 20mA 2 V
satu ration voltage
VBE * Base-emitter Ic = 5A VCE = 4V 2.5 V
voltage
hFE * DC current gain Ic = lA VCE = 4V 2500 -
Ic = 5A VCE = 4V 1000 -
Ic = lOA VCE = 4V 500 -
V F Parallel diode IF = 5A 1.2 V
forward voltage
129

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min.
Typ. Max. Unit
hie Small signal Ie = 5A
current gain
f = 1 MHz
CeBo Collector-base VeB = 10V
capacitance
f = 1 MHz
VeE = 4V
IE = 0
60 -
100 pF
ton
Turn-on time
0.5 f.1s
t. Storage time
tl
Fall time
Ie = 5A
IB2 = 20A
IBI = 20mA
Vee = 16V
1.1
**
f.1s
1.3 f.1s
2.5
f.1s
**
1.0 f.1s
* Pulsed: pulse duration = 300 f.1s duty cycle = 1.5%
** For PNP types
For PNP types voltage and current values are negative
Safe operating areas
G - 4746
PULSE OPERATIONS'
IC
, II
(A) IC MAX PU LSEO
"
~ lOj.Js
'", r-l00j.Js
10
, IC MAX CONT.
6
lms
m
4
DC OPERATION
10-1
II
, 'FOR SINGLE NON
II
REPETITIVE PULSE
• --r-
6r--- --r- --- -
-- - -
41-------- -- --
1---- "_L--rn--
- f-- - BDV64
BDV64A--
4 6'
10
BDV64B
""-
I-
----
I-
"""~
IC
(Ai
10
,
4
Safe operating areas
-
II ~'
Ie MAX PULSED
"
_10j.Js
'",
-100~s
IC MAX CONT"
1m.
DC OPERATION-'---<
j jill
''*FOR SINGLE NON
REPETITIVE PULSE
•
4
,
4 6'
10
BDV65
BDV65A-
BDV65B
i
130

10
DC current gain (BDV64 series)
DC transconductance (BDV64 series)
G 47l. 7
IC
(A )1- VCE=4 V
,
16
V .... ,
I
12
i
V -4OYV ~"
/
1/
/
, , I 1/
E
•
'r---lVCE =4V
.
, 125 ·C' .....
, f1
253---I--n--"
,
/ V
V V !
IC(A) 0.8 1.6 2.4
VCE (sa I)
(V)
Collector-emitter saturation voltage
(BDV64 series)
IIII
IIII
hFE =250
G 471"
VCE(sat
(V)
Collector-emitter saturation voltage
(BDV64 series)
3A
6
lOA
G 4750
1-
./
\..
o
-,
10
10 IC (A)
o
-,
10
10 Ie (mA)
131

DC current gain (BDV65 series)
V
A
A
/ 12S'C ......
/ "
1:.c
V -
....
IC
(A)
16
12
DC transconductance (BDV65 series)
VCE,4
G '742
10
/
V
V
V" -40'C
VCE =111
1
V
, .
10-1
IC(A)
4
o
/
V
0.8 1.6 2.4
VcE(sat
(V)
Collector-emitter saturation voltage
(BDV65 series)
G -4743
)
I I
hFE=2S0
Collector-emitter saturation voltage
(BDV65 series)
G 4744
VeE( ....'
) I
(VI
3A 6A lOA
I\.
10-1 10 IC (A)
o
10-' 10
132

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The BDW 51, BDW 51 A, BDW 51 Band BDW 51 C are silicon epitaxial-base NPN power
transistors in Jedec TO-3 metal case. They are intended for use in power linear and
switching applications.
The complementary PNP types are the BDW 52, BDW 52A, BDW 52B and BDW 52C
respectively.
ABSOLUTE MAXIMUM RATINGS
BOWS1 BOWS1 A BOWS1 B BOWS1 C
V CBO
V CES
V CEO
V EBO
Ic
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase';;;;25°C
Collector-base voltage (IE = 0)
ICM
IB
P tot
T stg Storage temperature
T j Junction temperature
INTERNAL SCHEMATIC DIAGR:4
45V
45V
45V
60V BOV
60V BOV
60V BOV
5V
15A
20A
7A
125W
-65 to 200°C
200°C
100V
100V
100V
MECHANICAL DATA
Dimensions in mm
Collector connected to case
133
1O/B2

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.4 °C/W
ELECTRICAL CHARACTERISTICS (Tease
25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
Icso Collector cutoff for BDW51
current (I E = 0) for BDW51A
for BDW51B
for BDW51C
Tease = 150°C
for BDW51
for BDW51A
for BDW51B
for BDW51C
Vcs = 45V 500 flA
Vcs = 60V 500 flA
Vcs= 80V 500 flA
Vcs= 100V 500 flA
Vcs = 45V 5 mA
Vcs= 60V 5 mA
Vcs = 80V 5 mA
Vcs= 100V 5 mA
IcEO Collector cutoff for BDW51
current (Is = 0) for BDW51A
for BDW51B
for BDW51C
IESO Emitter cutoff VES = 5 V
current (lc = 0)
VCE = 22V 1 mA
VCE = 30V 1 mA
VCE = 40V 1 mA
VCE = 50V 1 mA
2 mA
VCEO(sus) * Collector-emitter
sustaining voltage
(Is = 0)
Ic = 100 mA
for BDW51 45 V
for BDW51A 60 V
for BDW51B 80 V
for BDW51C 100 V
VCE(sat)* Collector-emitter Ic = 5A
saturation voltage Ic = 10A
VSE(sat) * Base-emitter Ic = lOA
saturation voltage
VSE * Base-emitter voltage Ic = 5A
hFE * DC current gain Ic = 5A
Ic = lOA
fT Transition frequency Ic = 0.5A
* Pulsed: pulse duration 300 fls, duty cycle
134
Is = 0.5A 1 V
Is = 2.5A 3 V
Is = 2.5A 2.5 V
VCE = 4V 1.5 V
VCE = 4V 20 150 -
VCE = 4V 5 -
VCE = 4V 3 MHz
1.5%

Safe operating areas
(for BDW51 and BDW51A)
Ie
(Al
10
Ie M,b~X
PULSED
I I
Ie MAX CONTINUOU
• PULSE
" '"
r\. ~ r\
G-2679
PERATIO~JI
100~s
t--- DC OPERATION
IX
I'.
* FOR SINGLE NON lms
REPETITIVE P LSE
BDW51-f-
BDW51A
10ms
10
Safe operating areas
(for BDW51 Band BDW51 C)
Ie
(Al
10
G.,2680
Ie MAx prUL~Eb 1 ·PULSE OPERATION
I I I I I I I , 10}JS-1--
Ie MAX CONTINUOUS r\. t'\,.i'" lOOps
InC' n~
* FOR SINGLE NON
i"Si:
~ 1\
, ,
lms-1--
1--+--+-+-1-+-11-+1-1 BOW SIB -+--+-++-'" lOms
BDw~e~~~~---+~
10-1 '----IL...-..L.......JL..L.L.l..l.lL_...lI_LJ..J.JUllL_LJ
10
135

DC current gain
hFE __ EII
10
2_111.
G - 4859
VBE(on
(V)
)
DC transconductance
VCE = 4V
L
I
I
G - 4&63
.;'
10·IIIIIftII.
-2
10
468 -1 2 468
10 1
46.
10
46.
IC(A)
o
-1
10
10
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sal )
(V) 4
10
-1
10
,
·
6
4
,
·
6
4
,
·
6
4
,
-2
10
-1
10
:
46'
1
hFE= 10
V
46.
10
I
469 22
10
G 'I"
46'
IC(A)
VBE(sal
(V)
1.5
0.5
)
hFE'U
./
I
t
I
II
10
G 48S8
136

Collector-base capacitance
Transition frequency
eeso
(pF)
G- 10&60
tT
(MHz)
G-2612
VeE=J.V
150
\.
100
I'\.
./
........
50
........
V
...-
-,
10
10
V eB (V)
a
Ic (A)
;:;aturated switching characteristics
Power rating chart
t
(1'5 )
, 2
-,
,0
--
I
--
Vee= 30V
IB,.-IB2
hFE= ,0
..:;.
If
- ton
G 4861
, e
Ie (A)
Ptot
(W)
150
100
50
I'
"- r...:
"
50 100
I'
0-24
"-
" -.... ~
150 Tease (OC)
137

EPITAXIAL-BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
The BOW 52, BOW 52 A, BOW 52B and BOW 52C are silicon epitaxial-base PNP power
transistors in Jedec TO-3 metal case. They are intended for use in power linear and
switching applications.
The complementary NPN types are the BOW 51, BOW 51 A, BOW 51 B and BOW 51 C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDW52 BDW52A BDW52B BDW52C
V CBO
-45V
-100V
T j Junction temperature
200°C
1.1 max
Collector-base voltage (IE = 0)
-60V -80V
V CES Collector-emitter voltage (VBE = 0) -45V -60V -80V -100V
VCEO Collector-emitter voltage (lB = 0) -45V -60V -80V -100V
V EBO Emitter-base voltage (lc = 0)
-5V
Ic
ICM
IB
P tot
T stg
Collector current
Collector peak current
Base current
Total power dissipation at Tcase~25°C
Storage temperature
-15A
-20A
-7A
125W
-65 to 200°C
INTERNAL SCHEMATIC DlAGR:4
MECHANICAL DATA
Oimensions in mm
':CoHectpr c"mn~cted tcease
62ma1o;
8.7 m.. 11.7
TO-3
10/82 138

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.4 °C/W
ELECTRICAL CHARACTERISTICS (T case
25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcBO Collector cutoff for BDW52 V CB = -45V -500 ,.A
current (IE = 0) for BDW52A VCB = -60V -500 ,.A
for BDW52B VCB = -80V -500 ,.A
for BDW52C VCB = -100V -500 ,.A
T case = 150°C
for BDW52 VCB = -45V -5 mA
for BDW52A VCB = -60V -5 rnA
for BDW52B VCB = -80V -5 rnA
for BDW52C VCB = -100V -5 rnA
IcEO Collector cutoff for BDW52 VCE = -22V -1 rnA
current (IB = 0) for BDW52A V CE = -30V -1 rnA
for BDW52B V CE = -40V -1 rnA
for BDW52C V CE = -50V -1 rnA
lEBO Emitter cutoff VEB = -5 V -2 rnA
current (Ic = 0)
VCEO(sust Collector-emitter Ic = -100mA
sustaining voltage for BDW52 -45 V
(IB = 0) for BDW52A -60 V
for BDW52B -80 V
for BDW52C -100 V
VCE(sat)* Collector-emitter Ic = -5A IB = -0.5A -1 V
saturation voltage Ic = -10A IB = -2.5A -3 V
VBE(Sat) * Base-emitter Ic = -10A IB = -2.5A -2.5 V
saturation voltage
VBE * Base-emitter voltage Ic = -5A VCE = -4V -1.5 V
hFE * DC current gain Ic = -5A VCE = -4V 20 150 -
Ic = -10A VCE ,= -4V 5 -
,
fT Transition frequency Ic = -0.5A V CE = -4V 3 MHz
* Pulsed: pulse duration 300 ,.S, duty cycle 1.5%
139

Safe operating areas
(for BDW52 and BDW52A)
-Ie
(A)
10
G-2682
Ie M~X PULSED
• PULSE PERATION JJ.
100J:lS
I I I
Ie MAX CONTINUOU \
,"~
f-- DC OPERATION
'-
"
"'
* FOR SINGLE NON lms
REPETITIVE PULSE
BDW52- i--
BDW52A
tOms
10 ur-VCE (V)
Safe operating areas
(for BDW52B and BDW52C)
-Ie
(A)
10
Ie MAx pIUL~ETD I I
I I I I
Ic MAX eONTINUOU I "
5 "-
.PULSE OPERATIO
./ '-
In~nPF"l!JI I N
'"
\
" \~
, \, 100}JS
G-2681
10}Js-f---
,. ~g~F"'~~I~LE P N~~ 1\
1ms--
BDW528
BDW5iC
10ms
10
140

DC current gain
DC transc;onductance
G-'('852
hFE~_1111
VBE(on )
(V)
I
I
I
II
G .. Sl
''cE=4V
10, ___
...,
~
-2
10
468 _, 2 ,. 68
10
468 2" 68
10 Ie (A)
-,
10'
10
V.
(V) ,
2
10,
•
4
Collector-emitter saturation voltage
G-
••
VBE(sat
(V)
Base-emitter saturation voltage
)
I
I
hFP10
G loBS4
2
1
4.
10'
2 111111
-2
10
111111
-
.,
10' 10 Ie(A)
2 , .. 2
"
o
--
/
.,.,/
1

Collector-base capacitance
Transition frequency
CCBO
(pF )
G 48S6
IT
(MHz)
G -2613
VCE=-4V
200
I\,
"-'\
100
I'-..
/'
;'
./
./
.........
\
-I
10
10
VCB (V)
-Ie (A)
Saturated switching characteristics
Power rating chart
I
(I'S )
,-
-
.--
2
VCC=30V
Ie,. le2
hFE= 10
6-1,.857
Is
.............. If
150
100
......
"-
G_2S4
i,....-
Ion
50
........
......
-,
10
50 100
i'-...
I'
150 '"
142

EPITAXIAL-BASE NPN
MEDIUM POWER DARLINGTON
The BOW 91 is a silicon epitaxial base NPN transistor in monolithic Darlington configuration
mounted in Jedec TO-39 metal case. It is intended for use in switching and
linear applications. The complementary PNP type is the BDW92.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (I E= 0) 180 V
V CEO Collector-emitter voltage (I B= 0) 180 V
V EBO Emitter-base voltage (I C= 0) 6 V
Ic Collector current 4 A
I B Base current 100 mA
Ptot Total power dissipation at T case:

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
17.5 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff V cs=180V 50 IlA
current (I E= 0)
, cEO Collector cutoff V CE=90V 50 IlA
current (I B= 0)
lEBO Emitter cutoff VB~6V 0.4 2 rnA
current (I C= 0)
V CEO (sus)Coliector-emitter Ic =50mA 180 V
sustaining voltage
V CE (sat)* Collector-emitter Ic =2A I B =4mA 2 V
saturation voltage
VBE * Base-emitter Ic =2A V CE=2V 2.5 V
voltage
hFE * DC current gain Ic =2A V CE=5V 10003000 -
Ic =50mA V CE=5V 150 300 -
V * F Parallel diode 'F =2A 2.5 V
forward voltage
hIe Small signal I C =0.5A V CE=2V 20 -
currente gain f = 1 MHz
* Pulsed: pulse duration = 300 Ilsec, duty cycle = 1 %
144

Safe operating areas
IC
(A)
IC MAX PULSED
IC MAX
CONT
"
PULSE OPERATION
1\ 100
}JS
lms ~ .\
\
Kl}Js
G-3926
:--- DC OPERATION
11 n \
*FOR SINGLE NON
REPETITIVE PULSE;
11 II "- \
r-.
"
\
,
2 4 6 B 2 4 6 8 2 4 6 8
10 10 2 180 VeE (V)
DC current gain
DC transconductance
8
,
G~3920
Ie
(A)
G -3921
10 3
8
l,..-y
f..,..
f'\t\
'tE -5V
'te2V
10'
/17 IVrE =2V 1\
J
IJ
II
10
, , 8 , '8
10-1
, '8
Ie (A)
0,5 1,5 VeE (V)
145

Collector-emitter saturation voltage
Collector-emitter saturation voltage
G 3922
0-3923
VeE(sal l
(Vl
1,5
"FE=
hFE=250-
hFE=50
-f-j
I
fI..
I fJ
I/,
~
I
Ie:
3A
-~ 2A
lA
~
O,5A
0,1 A
. \
\
0,5
o
, 68 , 6.
10 -,
1
Ie
, 68
(Al
o
, 6 8 , 68
10-' 10
, 68
Ie (rnA)
Base-emitter saturation voltage
)
hFE =250
G -3924
Saturated switching characteristics
t
(ps) , I\:c =30V
hFE=250
Iel =-Ie2
G"3925
1,5
If
..,...
V ~b:
I'- Is
0,5
6 8 6 8
Ie (A)
i
• • ••
Ie (A)
146

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTON
The BOW 92 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration
mounted in Jedec TO-39 metal case. It is intended for use in switching and
linear applications.
The complementary N PN type is the BDW91.
ABSOLUTE MAXIMUM RATINGS
Vcso Collector-base voltage (I E= 0)
V CEO Collector-emitter voltage (I s= 0)
V ESO Emitter-base voltage (I c= 0)
Ic Collector current
Is Base current
P tot Total power dissipation at T case 525°C
Storage temperature
Junction temperature
T amb 525°C
-180 V
-180 V
-6 V
-4 A
-100 mA
10 W
1 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGRAM
- -- 1
I-~----·
! i
MECHANICAL DATA
I
.. _J R\ Typ.IOkfi
R1Typ.l50n
Dimensions in mm
147
5/80

THERMAL DATA
Rth i-case
Rthi-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 17.5 °C/W
max 175 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcBO Collector cutoff V cs=-180V -50 itA
current (I E= 0)
I CEO Collector cutoff V CE=-90V -50 itA
current (I B = 0)
lEBO Emitter cutoff VB~ -6V -0.4 -2 mA
current (I C= 0)
V CEO (sus)*Collector-emitter I C =-50 mA -180 V
sustaining voltage
VCE (sat)* Collector-emitter I C =-2A I B =-4mA -2 V
saturation voltage
VBE* Base-emitter I C =-2A V CE=-2V -2.5 V
voltage
hFE* DC current gain Ic =-2A V CE=-5V 10003000 -
Ic =-50mA V CE=-5V 150 300 -
V * Parallel diode If =·2A -2.5 V
F
forward voltage
hIe Small signal I C =-0.5A V cE=-2V 20 -
current gain
f = 1MHz
* Pulsed: pulse duration = 300115. duty cycle = 1 %
148

Safe operating areas
- Ie
(~)
Ie MAX PULSED
PULSE OPERATION
1\ 100
leMAX~ I ~s
CONT. I"i\ lms ,~
" \
KlJ-ls
G-3926
r--- DC OPERATION
II 1\
, I IT \
~FOR SINGLE NON
REPETITIVE PULSE \
10- 2
2 4 6 B 2 4 6 8
10 10 2
2 4 6 B
,
DC current gain
G 3928
-Ie
DC transconductance
G -3929
(Al
10'
- 2
vj..oo
K'
I\. 'IcE =-5V
t- VeE =-2V
II
/
V
].,I
'IcE =-2V'
10
4 6 , 4 6'
4 6'
-Ie
(A)
o
0,5
1/
1,5 -VeE (V)
149

Collector-emitter saturation voltage
Collector-emitter saturation voltage
G-3930
G 3931
-VCE(sal)
(V)
1,5
0,5
hFE=500
hFE =250
hFE - 50
I
/
1//.
V/
I
/
-VCE(sal)
(V)
-----
......
II
ICC
3A
2A
lA
- 0,5 A
-\- 0.1 A
\. ~
---
\
I---:::: \
"
10- 1 10- 1
4 6 B 4 68
4 68
-IC (A)
4 68 4 68 4 68
10-1 10 -IS (mA)
-VSE(sa1
Base-emitter saturation voltage
6-3932
I
(".)
B
Saturated switching characteristics
G -3933
Vee =-30V
hFE =250
lSI =-IS
r-
hFE =250
-"
/'
~ <
...... I. i'""---
ton ..... V
f----
If
o
6 8 6 8
10-1 -IC (A)
10-1
10- 1 -IC (A)
150

EPITAXIAl·BASE NPN
POWER DARLINGTONS
The BDW 93, BDW 93A, BDW 93B and BDW 93C are silicon epitaxial-base NPN
transistors in monolithic Darlington configuration and are mounted in Jedec TO-220
plastic package. They are intended for use in power linear and switching applications.
The complementary PNP types are the BDW 94, BDW 94A, BDW 94B and BDW 94C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDW93 BDW93A BDW93B BDW93C
V CBO
V CEO
Ic
ICM
IB
P tot
T stg
T j
Collector-base voltage (IE = 0)
Collector-emitter voltage (I~ = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease";; 25°C
Storage temperature
Junction temperature
45V
45V
60V 80V
60V 80V
12A
15A
0.2A
80W
-65 to 150°C
150°C
100V
100V
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
,----_ .. -
B I
I
I
I
L _____
Rl Typ.10k!l.
R2 Typ. 150n
Dimensions in mm
( C
Collector connected to tab.
TO-220
151
10/82

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.S6 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 2S o C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit.
IcBO Collector cutoff for BDW93 VCB = 4SV
current (IE = 0) for BDW93A VCB = 60V
for BDW93B VCB = SOV
for BDW93C VCB = 100V
Tease= 1S0°C
for BDW93 VCB = 4SV
for BDW93A VCB = 60V
for BDW93B VCB = SOV
for BDW93C VCB = 100V
ICEO Collector cutoff for BDW93 VCE = 40V
current (lB = 0) for BDW93A VCE = 60V
for BDW93B VCE = SOV
for BDW93C VCE = SOV
lEBO Emitter cutoff VEB = SV
current (lc = 0)
V CEO (sust Collector-emitter Ic = 100mA
sustaining voltage for BDW93
(IB = 0)
for BDW93A
for BDW93B
for BDW93C
VCE (sat)* Collector-emitter Ic = SA IB = 20mA
saturation voltage Ic = 10A IB = 100mA
VBE (sat)* Base-emitter Ic = SA IB = 20mA
saturation voltage Ic = 10A IB = 100mA
hFE * DC current gain Ic = 3A VCE = 3V
Ic = SA VCE = 3V
Ic = 10A VCE = 3V
VF* Parallel-diode IF = SA
forward voltage IF = 10A
hIe Small signal Ic = 1A VCE = 10V
current gain f = 1 MHz
100 flA
100 flA
100 flA
100 f1A
S
S
S
S
mA
mA
mA
mA
1 mA
1 mA
1 mA
1 mA
2 mA
4S
V
60 V
SO
V
100 V
2 V
3 V
2.S V
4 V
1000 -
7S0 20000 -
100 -
1.3 2 V
1.S 4 V
20 -
* Pulsed: pulse duration = 300 fls, duty cycle = 1.S%
152

Safe operating areas
(for BDW93 and BDW93A)
Ie 8
(A) 6
G-261Q11
10
Ie MAX
i-t--
r----
r----
r-"--
DCL-~R~TION
i I II
* PULSE "
OPERATION
100,us
5ms' 1 ."lI.
-r
h1",
*FOR SINGLE NON
REPETITIVE PULSE
"'
\ I
Safe operating areas
(for BDW93B and BDW93C)
10-'
I C B
(A) 6
BOW93
BOW93A-
II
4 6 8 4 6 8
10 VCE (V)
G -262511
10
B
IC M"X
*PUlSE OPERATION
5ms, Ims"~O ... s
~CI-I ~t1tON ~ "
I--- "-
~
* FOR SINGLE NON \
REPETITIVE PULSE
10-'
BDW9JB
BOW93C
4 6 8 4 6 8
10 VeE (V)
153

DC current gain
DC transconductance
6-2600
IC
(A)
G 2603
VCE =3V
10'
VCE=3V
7.5
'I
10'
)/
V \
2.5
II
I
10'
IC
(A)
veE (V)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
G_2601
vCE(satlH-++-+-H-+++-H--+-++-+-H-+---H
(V)
)
\
G 260 2
1.5
~=5t -
...,....
..... 3A
1A
0.5A
0.5
2.5 7.5 IC (A)
la (rnA)
154

Small signal current gain
Collector-base capacitance
10'
10'
VCE 3V
IC=2A
\
G 260 4
CCBO
(pF)
8
la'
G-2402
8 .±:j::
, ,
I
i
I i
1
!
i--- I i i
'
-
,
10
1\
~-_.
10
f (MHz)
10
Saturated switching characteristics
Power rating chart
1
(~s)
hFE 250
VCC-30V
191 =-192
G_259911
L----
r--r- r- ~
t
Ptot
(W)
100
80
I
l'
"
'i',.
f'.-
f'
"
't-...
i'-...
G 2683
to~
60
40
20
Ie (A)
a
25 50 75 100
155

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BDW 94, BDW 94A, BDW 94B and BDW 94C are silicon epitaxial-base PNP
transistors in monolithic Darlington configuration and are mounted in Jedec TO-220
plastic package. They are intended for use in power linear and switching applications.
The complementary NPN types are the BDW 93, BDW 93A, BDW 93B and BDW 93C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDW94 BDW94A BDW94B BDW94C
V C80
VCEO
Ic
ICM
18
P tot
T stg
T j
Collector-base voltage (IE = 0)
Collector-emitter voltage (18 = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tcase~ 25°C
Storage temperature
Junction temperature
-45V
-45V
-60V -80V
-60V -80V
-12A
-15A
-0.2A
80W
-65 to 150°C
150°C
-100V
-100V
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
Dimensions in mm
Collector connected .to tab.
TO-220
10/82 156

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1,56 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO Collector cutoff for BDW94 V CB = -45V
current (IE = 0) for BDW94A VCB = -60V
for BDW94B VCB = -80V
for BDW94C VCB = -100V
Tease = 150°C
for BDW94 VCB = -45V
for BDW94A VCB = -60V
for BDW94B VCB = -80V
for BDW94C VCB = -100V
ICEO Collector cutoff for BDW94 VCE = -40V
current (IB = 0) for BDW94A VCE = -60V
for BDW94B VCE = -80V
for BDW94C VCE = -80V
lEBO Emitter cutoff VEB = -5V
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = -100mA
sustaining voltage for BDW94
(IB = 0)
for BDW94A
for BDW94B
for BDW94C
VCE"fsat) * Collector-emitter Ic = -5A IB = -20mA
saturation voltage Ic = -10A IB =-100mA
VBE (sat)* Base-emitter Ic = -5A IB = -20mA
saturation voltage Ic = -10A IB =-100mA
hFE * DC current gain Ic = -3A VCE = -3V
Ic = -5A VCE = -3V
Ic = -10A VCE = -3V
V * F Parallel-diode IF = 5A
forward voltage IF = 10A
hte Small signal Ic = -1A VCE = -10V
current gain f = 1 MHz
-100 f1A
-100 f1A
-100 f1A
-100 f1A
-5 mA
-5 mA
-5 mA
-5 mA
-1 mA
-1 mA
-1 mA
-1 mA
-2 mA
-45 V
-60 V
-80 V
-100 V
-2 V
-3 V
-2,5 V
-4 V
1000 -
750 20000 -
100 -
1,3 2 V
1,8 4 V
20 -
* Pulsed: pulse duration = 300 f1s, duty cycle = 1,5%
157

Safe operating areas
(for BDW94 and BDW94A)
-I C B
(A) 6
G - 262911
10
IC MAX
* PULSE ,
OPERATION
100,us
5ms 1 -~
DC OPERATION I,
I 1111
*FOR SINGLE NON
REPETITIVE PULSE 1\
Safe operating areas
(for BDW94B and BDW94C)
10-'
-I C B
(A) 6
BDW94
BDW94A-~
III
4 6 B 4 6 B 4 6 B
10 10' -VCE (V)
G -2626/1
10
---

DC current gain
DC transconductance
6-2 6.6
-IC
(A)
6.'
VCE=-JV
10'
VCE =-3V
7.5
10'
/"
V
II
2.5
10'
-IC
(AI
-VBE (V)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
-VCE(sat I
(V)
B-2607
G-2608
hFE=250
IC=-5A
JA
-IA
-o.5A
~
0.5
2.5 7.5 -IC (A)
J
-Is (mA)
159

Small signal current gain
Collector-base capacitance
G-26n
CCBO,
G -2404
(pF) 6
10'
'I
10'
VeE -3V
'c=-2A
10'
f--
-t--
10
1\
--
10-2 f (MHz)
10
6 8
10 -VCB (V)
Saturated switching characteristics
Power rating chart
t
(~s)
hFE 250
Vee =-30V
6-2610/1
Ptot
(W)
100
G-2683
'81=-182
tf
r--- ts
ton
-
80
60
40
" "'
I'-.
~
I'"
"
I'-..
"
20
,
-IC (A)
o
25 50 75 100
160

EPITAXIAL·BASE NPN
POWER DARLINGTONS
The BDX 53, BDX 53A, BDX 53B and BDX 53C are silicon epitaxial-base NPN transistors
in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic
package, intended for use in hammer drivers, audio amplifiers and other medium power
linear and switching applications.
The complementary PNP types are the BDX 54, BDX 54A, BDX 54B and BDX 54C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDX53 BDX53A BDX53B BDX53C
V CBO
V CEO
V EBO
Ic
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase~25°C
Collector-base voltage (IE = 0)
ICM
IB
P tot
T stg Storage temperature
T j Junction temperature
45V
45V
60V 80V
60V 80V
5V
8A
12A
0.2A
60W
-65 to 150°C
150°C
100V
100V
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
to.4""'·
I
~ z....I-\.
0.5
,",,, L
TO-220
161
6/77

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.0B °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcBO Collector cutoff for BDX53 VCB = 45V 200 J1A
current(IE = 0) for BDX53A VCB = 60V 200 J1A
for BDX53B VCB = BOV 200 J1A
for BDX53C VCB = 100V 200 J1A
IcEO Collector cutoff for BDX53 VCE = 22V 500 J1A
current (IB = 0) for BDX53A VCE = 30V 500 J1A
for BDX53B VCE = 40V 500 J1A
for BDX53C VCE = 50V 500 J1A
'EBO Emitter cutoff VEB = 5 V 2 mA
current (Ic = 0)
V CEO(sus) * Collector-emitter Ic = 100 mA
sustaining voltage for BDX53 45 V
(lB = 0) for BDX53A 60 V
for BDX53B BO V
for BDX53C 100 V
VCE(sat) * Collector-emitter Ic = 3A 'B = 12mA 2 V
saturation voltage
VBE(sat) * Base-emitter
saturation voltage
Ic = 3A
IB = 12mA 2.5 V
hFE * DC current gain Ic = 3A VCE = 3V 750 -
VF Parallel-diode 'F = 3A 1.B 2.5 V
forward voltage IF = BA 2.5 V
* Pulsed: pulse duration 300 J1s, duty cycle 1.5%
162

Safe operating areas
IC
(A)
II
I
. I I I 1.11
Ie MAX PULSED I i
10 Ie MAX CONTINUOUS'
~PERATION
G -2623
I IIIII
1 T ITII
-t-
PULSE OPERATION*
lO~s
~
,
\
"-
"-- il \1
*FOR SINGLE NON
\
REPETITIVE PULSE
BDX53
,
BDX53
-
BDX53
BDX53
YlO1JS
---
----
Ims
f
---
10
DC current gain
DC transconductance
6-2600
IC
(Al
6-2603
10'
VCE=3V
7.5
VCE=3V
10'
//
./
\
2.5
10'
IC
(Al
VeE (Vl
163

Collector-emitter saturation voltage
Collector-emitter saturation voltage
VeE(sat )
(V)
6-2601
G-2tl02
hFE=2S0
1.S
le=Sf l- I-
"t--o
I\.
3A
lA
o.SA
o.S
o
2.5
lS
Ie (A)
o
Small signal current gain
Saturated switching characteristics
t
(1'5)
6-2 599 11
10'
----
---Is
hFE=250
VCC=30V
161=-162
....
I
lon-=
10
\
10'"
10'"
11,\1111
IIIXlI
, (MHz)
10-'
Ie (Al
164

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The BDX 53E, BDX 53F are silicon epitaxial base NPN transistors in monolithic
Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary PNP types are the BDX 54E and BDX 54F respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (I E= 0)
V CEO Collector-emitter voltage (I B= 0)
V EBO Emitter-base voltage (I c= 0)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at T case.$25°C
T stg Storage temperature
T j Junction temperature
BDX53E BDX53F
140V 160V
140V 160V
5V
8A
12A
0.2A
60W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGRAM
('C
i
r -- ----- k
r -
I? __-L I ! *
1 I
~,
, ~ ___ ~ __ I---.J R1T~p.l0H~
MECHANICAL DATA
6
R2 Typ. 150n
5,-103611 E
Dimensions in mm
Collector connected to tab.
l.L.W.­
~I..-
165
5/80

THERMAL DATA
Rth j-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.08 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEO Collector cutoff for BDX53E V CE= 70V O.S mA
current (I B= 0) for BDX53F V cr'80V O.S mA
ICBO Collector cutoff for BDX53E VcB=140V 0.2 mA
current (I E= 0) for BDX53F VcB=160V 0.2 mA
lEBO Emitter cutoff V EB=SV S mA
current (I E= 0)
V CEO (sus)·Collector-emitter
Ic =SOmA
sustaining voltage for BDX53E 140 V
(IB= 0) for BDX53F 160 V
VCE (sat) • Collector-emitter Ic =2A IB =10mA 2 V
saturation voltage
VBE (sat) • Base-emitter Ic =2A I B =10mA 2.S V
saturation voltage
hFE • DC current gain Ic =2A VcrSV SOO -
Ic =3A VcrSV lS0 -
V F • Parallel diode IF =2A 2.S V
forward voltage
hie Small signal I c =0.5A Vcr2V 20 -
currente gain f = 1 MHz
• Pulsed: pulse duration = 300 jJ.S, duty cycle = 1 %
166

Safe operating areas
IC 8
(Ah ICMAX
I
G-3927/1
-PULSE *
~bPERATlON
I\,
10llls I
"
100~
1 - I II
~ illS
" '\I~S Ll ... !L
~
I'
4 6 8
10
DC OPERATION--''
i*FOR SINGLE NON
REPETITIVE PULSE
DC current gain
Ie
DC transconductance
G -3921
(Al
10'
•
",/
......
"'\\
'i::E =2V
'i::E=5V
10'
.I
/ V
VeE =2V \
I
10
.
10-'
, . . ,.
10-'
. , .
Ie (Al
o
1.1
V
0,5 1,5 VeE (Vl
167

--~
Collector-emitter saturation voltage
Collector-emitter saturation voltage
)
hFE=500-
1,5 hFE =250-
hFE=50
---I
I
riJ...
t /
to/.
W
G 3922
VCE(sa I
(V)
'----
\
~ \
I
Ie:
- 3A
2A
1A
O,SA
0,1 A
G-3923
0,5
L, 6 iii 4 6 8
Ie
(A)
o
4 6 8 4 6 8 J, 68
10 IS (mA)
1,5
0,5
)
Base-emitter saturation voltage
hFE =250
-
........
..,.
G -3924
I
(ps) 8
Saturated switching characteristics
I\:;e 30V
hFE=250
lSI = IS2
_If
I I
~:'" ~ I 'Is
G -3925
./ , Ie (A)
6 8 4 6 8
Ie (A)
168

EPITAXIAL-BASE NPN
MEDIUM POWER DARLINGTON
The BDX53S is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration
and is mounted in Jedec TO-39 metal case.
It is intended for use in medium in power linear and switching applications.
The complementary PNP type is the BDX54S
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO
Ic
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Collector-base voltage (I E= 0)
ICM
IB Base current
P tot
Total power dissipation at T case :

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
11.66 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff V cs=150V 0.2 mA
current (I E= 0) T case= 125 "C
V cs=150V 2 mA
ICEO Collector cutoff V CE=75V 0.2 mA
current (I B = 0)
lEBO Emitter cutoff V EB=5V 5 mA
current (I C =0)
V CEO (sustCollector-emitter
sustaining voltage Ic =50mA 150 V
(lB = 0)
V CE (sat) of< Collector-emitter Ic =2A I B =8mA 2 V
saturation voltage
V BE (sat) of< Base-emitter Ic =2A 1 B =8mA 2.5 V
saturation voltage
hFE of< DC current gain Ic =100mA V CE=5V 100 -
Ic =2A V CE=5V 500 -
V of<
F Parallel diode IF =2A 2.5 V
forward voltage
hIe Small signal I C =0.5A V CE=2V 20 -
currente gain f = 1 MHz
'" Pulsed: pulse duration = 300 ~s, duty cycle = 1 %
170

Safe operating area
Ie
(A)
IC MAX
" !'.
PULSE OPERATION.
10~5
G-3919
I~
l\: 100
I ~s
lms 1\ ~
\
10-1
t--- DC OPERATION
lIJFOR SINGLE NON
REPETITIVE PUL SE
,
~
r"I \
10- 2
4 6 B 2
10
I
\0
4 6 B 2
102
4 6 B
DC current gain
DC transconductance
G-3920
Ie
(AI
G-3921
10'
•
1/'1-'
jo.",
I,,\~
'tE =2 V
'tE=5V
10'
•
v
.;IV
IV"F =2V
I
10
10-'
, 6 •
10-'
, 6'
, '8
Ie (AI
o
0,5 1,5 VeE (VI
171

Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCElsal )
(V)
1,5
r
hFE=500
hFE =250
hFE=50
-l..J
I [I
7 tl..
I '/
I/,
W
G 3922
t
l------ I--
r
Ie:
1-- 3A
l------
2A
I----- IA
0,5 A
0,1 A
!\
\
G -3923
0,5
o
4 6 8 , 6 , 4 6 8
10 _1
IC (A)
4 6 a 4 6 8 4 6 a
10-1 10 18 (rnA)
V8E(sat )
(V)
1,5
0,5
Base-emitter saturation voltage
h FE =250
f----
-~
G -392to
I
(~s)
Saturated switching characteristics
, I\;e -30 V
, hFE-250
lSI =-182
,
2
,
6
If
I
I ~~
'"
~ ~ Is
!
G -3925
6 8 4 6 8
IC (A)
Ie
6 ,
(A)
172

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BOX 54, BOX 54A, BOX 54B and BOX 54C are silicon epitaxial-base PNP transistors
in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic
package, intended for use in hammer drivers, audio amplifiers and other medium power
linear and switching applications.
The complementary NPN types are the BOX 53, BOX 53A, BOX 53B and BOX 53C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDX54 BDX54A BDX54B BDX54C
Vcso Collector-base voltage (IE = 0) -45V
V CEO Collector-emitter voltage (Is = 0) -45V
T j Junction temperature
V ESO
Ie
leM
Is
P tot
T stg
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase";;;;25°C
Storage temperature
-60V -80V
-60V -80V
-5V
-8A
-12A
-0.2A
60W
-65 to 150°C
150°C
-100V
-100V
INTERNAL SCHEMATIC DIAGRAM
c
r-------l
MECHANICAL DATA
• 1 I
I
I
I
I
I
L_._. ____ .~ R1Typ.l0kft
S~'031JI
R2Typ.1S00
Dimensions in mm
173
6/77

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.08 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease =
25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcBO Collector cutoff for BDX54 VCB = -45V -200 fJ.A
current (IE = 0) for BDX54A VCB = -60V -200 fJ.A
for BDX54B VCB = -80V -200 !J.A
for BDX54C VCB = -100V -200 !J.A
IcEO Collector cutoff for BDX54 VCE = -22V -500 !J.A
current (lB = 0) for BDX54A VCE = -30V -50U fJ.A.
for BDX54B VCE = -40V -500 !J.A
for BDX54C VCE = -50V -500 fJ.A
lEBO Emitter cutoff VEB = -5 V -2 mA
current (Ic = 0)
V CEO(sus) * Collector-emitter Ic = -100 mA
sustaining voltage for BDX54 -45 V
(IB = 0) for BDX54A -60 V
for BDX54B -80 V
for BDX54C -100 V
VCE(sat) * Collector-emitter
saturation voltage
Ic = -3A IB = -12mA -2 V
VBE(sat) * Base-emitter Ic = -3A VCE"" -12mA -2.5 V
saturation voltage
hFE * DC current gain Ic = -3A VCE = -3V 750 -
VF Parallel-diode IF = 3A 1.8 2.5 V
forward voltage IF = SA 2.5 V
* Pulsed: pulse duration 300 fJ.s. duty cycle 1.5%
174

Safe operating areas
-IC
(A)
10
I III II
I I I I I I I I I II"
IC MAX PULSED
PULSE OPERATION*
10IJs
Ie MAX CONTINUO US
~ \ ·1UULI~
DC OPERATION \
" \
1ms
*FOR SINGLE NON
\ I'
REPETITIVE PULSE
G -2622
10-1
BDX54 ~
BDX54
BDX54
BDX54
10
DC current gain
DC transconductance
10'
VCE=-lV
G 2606 r .....: 609
-IC
(A)
7.5
I
VCE=-3V
-
10'
/'
'"
2.5
10'
-Ie (A)
3 -VBE (V)
175

Collector-emitter saturation voltage
Collector-emitter saturation voltage
I
607
0--2608
-~~~~~1-~-+~+-~~1-~-+1-~~
(V)
hFE=2S0
L5
le=-SA
-JA
-lA
-o.SA
0.5
2.5
7.5 -Ie (AI
3 -18 (mA)
Small signal current gain
)
Saturated switching characteristics
hi.
6-261011
hFE= 250
Vee =-30V
10'
161=-162
10'
10
\ I~~~~
I'
If
-Is
Ion ....
10-'
I (MHz)
8
-Ie (A)
176

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BDX 54E, BDX 54F are silicon epitaxial base PNP transistors in monolithic
Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary N PN types are the BDX 53E and BDX 53F respectively.
ABSOLUTE MAXIMUM RATINGS
VCSO Collector-base voltage (I E= 0)
V CEO Collector-emitter voltage (I s= 0)
V ESO Emitter-base voltage (I C= 0)
Ic Collector current
ICM Collector peak current
Is Base current
P tot Total power dissipation at T ca5e:S:25°C
T5t9 Storage temperature
T j Junction temperature
BDX54E BDX54F
-140V -160V
-140V -160V
-5V
-SA
-12A
-0.2A
60W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
I
• I
c
,-------,
I
I
I
I .,. I
L ______ ~ R1Typ.l0kfl
~-\037/1
R2Typ.150n
Dimensions in mm
Collector connected to tab.
To-220
177
5/80

THERMAL DATA
Rth j-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.08 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEO Collector cutoff for BDX54E V CE=-70V -O.S mA
current (I S = 0) for BDX54F V cr-8OV -O.S mA
Icso Collector cutoff for BDX54E V cs=-140V -0.2 mA
current (I E= 0) for BDX54F v cs==-160V -0.2 mA
IESO Emitter cutoff V ES=-SV -S mA
cu.rrent (I E= 0)
V CEO (sus) *Collector-emitter Ic =-SO mA
sustaining voltage for BDX54E -140 V
(Is = 0) for BDX54F -160 V
V CE (sat) * Collector-emitter I C =-2A Is =-10mA -2 V
saturation voltage
VSE (sat) * Base-emitter I C =-2A Is =-10mA -2.S V
saturation voltage
hFE * DC current gain Ic =-2A V CE=-SV SOO -
Ic =-3A V CE=-SV 1S0 -
V * F Parallel diode IF = 2A -2.S V
forward voltage
hIe Small signal I C =-O.SA V CE=-2V 20 -
currente gain f = 1 MHz
* Pulsed: pulse duration = 300 fJ,S, duty cycle = 1 %
178

Safe operating areas _IC 8
( A)6 IC MAX
"- 1\ 100\
"- 1 ~. ,us
1'\ 1 mSi ....
--.--' •.j..-
"l--
G-3927/1
-PULSE *
\'OPERATION
10AJS I
- 1 1
1 .11
I
DC OPERATION
~
1\
*FOR SINGLE NON
REPETITIVE PULSE
I
I
II
4 6 8
10
DC current gain
DC transconductance
B
6
,
G 3928
-IC
(A)
G-3929
2
10 3
B
6
l/j;
r\'
l\. licE =-5V
VCE =-2V
1
C;;
17
/
VCE =-2V,
II
B
2
10
, 6 B
-IC (A) o 0,5
1,5 -VeE (V)
179

-VCE(sat )
(V)
1,5
0,5
Collector-emitter saturation voltage
hFE=500
hFE =250
hFE = 50
I
/
//
V/
j
G -3930
-VCE(sat
(V)
Collector-emitter saturation voltage
) II
------
----
.....
G 393 1
.\-
----
II
Ie
3A
2A
,- IA
0,5 A
0,1 A
l ~
\
/ \.
"
o
10- 2
4 6 8
10- 1
4 6 8
I
4 6 8
- IC (A)
, 68 4 6 8 4 6 8
10-1 10 -I B (mA)
)
Base-emitter saturation voltage
G-3932
t
(}JS)
Saturated switching characteristics
G -3933
8 Vee =-30V
,
hFE =250
lSI =-IB2
hFE =250
tf
-
..........
./
2~ ~ i--'" ts ..........
r----. ton .... /
6 8 6 8
10-1 -Ie (A)
10-1
, ,
10- 1 -Ie (A)
180

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTON
The BOX 54S is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration
and is mounted in Jedec TO-39 metal case.
It is intended for use in medium power linear and switching applications.
The complementary N PN type is the BOX 53S.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO
Ic
Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
ICM Collector peak current
IB Base current
P tot
Total power dissipation at T case::;25°C
T amb::;25°C
Storage temperature
Junction temperature
-150 V
-150 V
-5 V
-6 A
-10 A
-0.2 A
15 W
1 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGRAM
r----
i ~-+-~
, I
MECHANICAL DATA
RI Typ.lOkn
R2 '!yp. 150n
Dimensions in mm
181
5/80

THERMAL DATA
Rth j-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
11.66 °C/W
17S °C/W
ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IC80 Collector cutoff V cs=-1S0V -0.2 mA
current (I E= 0) T case= 12SoC
V cs=-1S0V -2 mA
IcEO Collector cutoff V CE=-7SV -0.2 mA
current (18= 0)
1,,80 Emitter cutoff V E8=-SV -S mA
current (I C= 0)
V CEO (sus)*Collector-emitter
sustaining voltage
(18= 0)
I C =-SOmA -1S0 V
VCE(sat) * Collector-emitter I C =-2A 18 =-8mA -2 V
saturation voltage
V8E (sat)* Base-emitter I C =-2A 18 =-8mA -2.S V
saturation voltage
hFE* DC current gain Ic =-100mA V CE=-SV 100 -
Ic =-2A V CE=-SV SOO -
V * F Parallel diode IF =-2A -2.S V
forward voltage
hie Small signal Ie =-O.SA Vcr-2V 20 -
currente gain f= 1MHz
* Pulsed: pulse duration = 300 ~s, duty cycle = 1 %
182

Safe operating area
-Ie
(A)
IC MAX
PULSEOf' RATK)N*
10 }.Is
l\: 100
r...
,
}.Is
lms ~
~
\
~ DC OPERAT10N'"
G-3919
10 -1
1'0..
l'\;
I\"
i \
-FOR SINGLE NON
REPETITIVE PULSE
I
I
10- 2
T ii
i
I
6 8 G B 2 6 8
10
- ~
102 150 -VeE (V)
hFE 8
- 2
10 3
DC current gain
1/1.-
i"\
DC transconductance
G-3928 G 3929
!\. VeE = -5V -IC
(A)
VCE =-2V
-
6
la'
,
6
,
,
/'17
10
, 6'
VeE =-2V \
1/
1:1
, "
-Ie (A) o 0,5 1,5 -VeE (V)
II
183

-VC£(sat )
(V)
1,5
Collector-emitter saturation voltage
hFE=500
hFE =250
hFE = 50
I
1//
V/
I
/
G -3930
-YeSsat)
(V)
Collector-emitter saturation voltage
-----
G 3931
-tt
-Ie'
3A
2A
f- 0,5 IA
A
-\- ~-
0,1 A
l ~
\.
\.
.......
0,5
"
o
4 fi B'
10-? 10-'
, 68
I
, 6'
-Ie (A)
, 68 4 68 4 68
10-1 10 -I B (mA)
Base-emitter saturation voltage
Saturated switching characteristics
G-3932
G-3933
)
("s) 8
Vee =-30V
hFE _250
IBI =-IB
-
hFE =250
......--
./
tf
'?> ;:......... r--..
....... ts ton ". V
6 8 6 8
10-1 -Ie (A)
10-'
, 8 , 8
10- 1 -Ie (A)
184

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary PNP types are the BDX 86, BDX 86A, BDX 86B and BDX 86C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDX85 BDX85A BDX85B BDX85C
V CBO Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (repetitive)
IB Base current
P tot Total power dissipation at Tcase

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.75 °C/W
ELECTRICAL CHARACTERISTICS (T case
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff for BOX85 V CB = 45 V
current (IE = 0) for BOX85A V CB = 60 V
for BOX85B V CB = SO V
for BOX85C V CB = 100 V
T case = 150°C
for BOX85 VCB = 45 V
for BOX85A V CB = 60 V
for BOX85B V CB = SO V
for BOX85C V CB = 100 V
ICEO Collector cutoff for BOX85 VCE = 22 V
current (IB = 0) for BOX85A V CE = 30 V
for BOX85B V CE = 40 V
for BOX85C V CE = 50 V
lEBO Emitter cutoff VEB = 5 V
current (lc = 0)
VCEO(sus) * Collector-emitter Ic = 100 mA
sustaining voltage
for BOX85
(IB = 0)
for BOX85A
for BOX85B
for BOX85C
V CE(sat) * Collector-emitter Ic = 4A IB = 16 mA
saturation voltage Ic = SA IB = 40 mA
VBE(Sat) * Base-emitter Ic = SA IB = SO mA
saturation voltage
VBE * Base-emitter voltage Ic = 4A VCE = 3V
hFE * DC current gain Ic = 3A V CE = 3V
Ic = 4A VCE = 3V
Ic = SA V CE = 4V
VF Parallel-diode IF = 3A
forward voltage IF = 8A
hie Small signal Ic = 3A VCE = 3V
current gain f = 1 MHz
500 [LA
500 [LA
500 [LA
500 [LA
5 mA
5 mA
5 mA
5 mA
1 mA
1 mA
1 mA
1 mA
2 mA
45 V
60 V
SO
V
100 V
2 V
4 V
4 V
2.S V
1000 -
750 lS000 -
200 -
.-
1.8 V
2.5 V
10 -
* Pulsed: pulse duration 300 [Ls, duty cycle
186
1.5%

Safe operating areas
(for BDX85 and BDX85A)
IC
(A)
10
11111 * PULSE
Ie MAX PULSED I III
OPERATION
l00,us
IC MAX CONTINUOUS ~ lms
G-2387
DC OPERATION
1\
"' 4 "- \
/
"
* FOR SINGLE NON REPETITIVE'
PULSE
5ms
BDX8
BDX8~A
Safe operating areas
(for BDX85B and BDX85C)
IC
(A)
10
10
_G-13..88
t-
k MAX PULSED II *PULSE OPERATION
k MAX CONTINUOUS r\.
, l00,us
.-~ I---
"' ... '"
/
"
DC OPERATION- >-J
r\ 1\ 5ms
1\
,
*FOR SINGLE NON REPETITM
PULSE
~
1
10
BDX85B
1
BDX85C
I
187

~.
DC current gain
DC transconductance
,
G 4900
'e
(A)
VC£"3V
G -2368
II
•
6
,
,
10 4 •
6
,
VeE:3V
I
4
J
,
10
•
6
,
,
-,
10
V
4 6'
,
4 6 •
10
4 68
'e(A)
o
V
Q.5 1.5
Collector-emitter saturation
voltage
hFE" 250
Collector-emitter saturation
voltage
)
I--
I
I
I
Ie:
A
ISA
10A
G - 4901
--
~
-,
10
4 6 •
4 68
10
I
, 6 •
'e(A)
-,
10
10
10' 'B (mA)
188

Small signal current gain
Collector-base capacitance
CCBO
(pF)
G - "B~1
'=. ,
1o"II"~.
10
\
"--
"'""l-
t--
468 2
-,
10
4 ..
f (MHz)
10
10
)
,
,
Saturated switching characteristics
- 4
"
Ptot
(W)
Power rating chart
G -2395
2
""'
.J"
I
V" +-
10n
lf
, VCC:30V
IB1 = I~2
hFE=2 0
100
I'
-,
10
. , . ,
10 IC (A)
o
"- I'
'" I" "- 1'.
50 100 150 Tease(·C) '"
15
50
189

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BDX 86, BDX 86A, BDX 86B and BDX 86C are silicon epitaxial-base PNP power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary NPN types are the BDX 85, BDX 85A, BDX 85B and BDX 85C
respectively.
ABSOLUTE MAXIMUM RATINGS
BOX86 BOX86A BOX86B BOX86C
V CBO Collector-base voltage (IE = 0) -45V
T j Junction temperature
VCEO Collector-emitter voltage (lB = 0) -45V
V EBO Emitter-base voltage (Ic = 0)
Ic
ICM
IB
P tot
T stg
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase~25°C
Storage temperature
-60V -80V
-60V -80V
-5V
-lOA
-15A
-O.lA
100W
-65 to 200°C
200°C
-100V
-100V
INTERNAL SCHEMATIC DIAGRAM
r~-~~~--l
• i
I
I
I
I
I
I ' R I
L~_._, __,__ ~ Rt Typ.l0kfl
R2Typ.150n
c
MECHANICAL DATA
Dimensions in mm
10/82
190

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.75 °C/W
ELECTRICAL CHARACTERISTICS (Tease
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
Icso Collector cutoff for BDX86 Vcs= -45 V
current (IE = 0) for BDX86A V cs = -60 V
for BDX86B V cs = -SO V
forBDX86C Vcs= -100V
Tease = 150°C
for BDX86 Vcs= -45 V
for BDX86A V cs = -60 V
for BDX86B V cs = -SO V
forBDX86C Vcs= -100V
IcEO Collector cutoff for BDX86 VCE = -22 V
current (Is = 0) for BDX86A V CE = -30 V
for BDX86B V CE = -40 V
for BDX86C V CE = -50 V
lEBO Emitter cutoff VEB = -5 V
current (Ic = 0)
VCEO(SUS) * Collector-emitter Ic = -100 mA
sustaining voltage
for BDX86
(Is = 0)
for BDX86A
for BDX86B
for BDX86C
VCE(sat) * Collector-emitter Ic = -4A Is = -16 mA
saturation voltage Ic = -SA Is = -40 mA
VSE(sat) * Base-emitter Ic = -SA Is = -SO mA
saturation voltage
VSE * Base-emitter voltage Ic = -4A VCE = -3V
hFE * DC current gain Ic = -3A VCE = -3V
Ic = -4A VCE = -3V
Ic = -SA VCE = -4V
VF Parallel-diode IF = 3A
forward voltage IF = SA
hie Small signal Ic = -3A VCE = -3V
current gain f = 1 MHz
-500 [lA
-500 [lA
-500 [lA
-500 [lA
-5 mA
-5 mA
-5 mA
-5 mA
-1 mA
-1 mA
-1 mA
-1 mA
-2 mA
-45 V
-60 V
-SO
V
-100 V
-2 V
-4 V
-4 V
-2.S
1000 -
750 1S000 -
200 -
V
1.S V
2.5 V
10 -
* Pulsed: pulse duration 300 [ls, duty cycle
191
1.5%

-IC
(Al
10
Safe operating areas
(for BDX86 and BDX86A)
IC MAX PULSED
I III
IC MAX CONTINUOUS
*PULSE
OPERATION
i-\.'
l00,.,s
Ims
r.-2389
-IC
(Al
10
Safe operating areas
(for BDX86B and BDX86C)
I IIII I 1111-
G-2390
k MAX PULSED *PULSE PER ATION T
Ie MAX CONTINUOUS
l00,.,s
r--..~
-
DC OPERATION
*FOR SINGLE NON REPETITIVE\
PULSE
Sms
I DC OPERATlON-
*FOR SINGLE N ON REPETITIVE
PULSE
\1\ Sms
BDX86 -I->
BDX86B
BDXB6C
10
BDX86A-r-
10-1
10
DC current gain
DC transconductance
•
10'
10 2
,/' ,/
, .
VCE=-3V
.........
'\
G-2363
6 •
-IC(A)
-Ic
(Al
8
6
o
'l
as
_lV
..,
G -2369
Ii
192

-VCE(sat)
(V)
Collector-emitter saturation
voltage
hFE=2S0
G 2365
4IcE(sat
(V)
Collector-emitter saturation
voltage
)
I
I I
G 2367
-I =3A -I =6 -I =10A
1\
'"
\.
o
10
-IC (A)
o
10 -IS(mA)
Base-emitter saturation voltage
Small signal current gain
VBE(sat )
(V)
10
•
-1
10
4 , •
hFE= 250
G 4898
-_I-' 4 ,. 4 ,.
10 IC (Al
10
4
·
2
,= VCE= 3V
4- I .SA
2
10'
· ,
4
2
• ,
4
,
4 ,. 2 468
4 "
16 3 16' f (MHz)
\
\
193

Collector-base capacitance
Saturated switching characteristics
eeeo
(pF )
G - 10838
I
(/,5 )
,
G "839
2
10
2
r--
......
t--1"-
4
2
,
hFE= 250
Vee=-30V
leI = le2
If
~
'"", .......
4
......
"1on
10
, .
10
, .
-Vea (V)
2
1
6 •
6 ,
10 Ie (A)
Plol
(w)
Power rating chart
G -2395
100
!.......
50
r-...
i"'.
~
I'
" 1"- .....
l'-..
o
50 100
150 Tcase("C)
194

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The BDX 87, BDX 87A, BDX 87B and BDX 87C are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary PNP types are the BDX 88, BDX 88A, BDX 88B and BDX 88C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDX87 BDX87 A BDX87B BDX87C
V C80 Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (18 = 0)
V E80 Emitter-base voltage (Ie = 0)
Ie Collector current
leM Collector peak current (repetitive)
18 Base current
P tot Total power dissipation at T case':;; 25·C
T stg Storage temperature
T j Junction temperature
45V
45V
60V 80V
60V 80V
5V
12A
18A
0.2A
120W
-65 to 200·C
200 ·C
100V
100V
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
,-------1
B I I
I
I
I ' R I
L ___._._._~ =~~~~~
S-103611 E
Dimensions in mm
Collector connected to case
6 "'"
TO-3
195 10/82

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.45 °C/W
ELECTRICAL CHARACTERISTICS (Tease
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff for BDX87 VCB = 45 V
current (IE = 0) forBDX87A VCB = 60V
for BDX87B V CB = 80 V
for BDX87C V CB = 100 V
Tease = 150°C
for BDX87 VCB = 45 V
for BDX87A VCB = 60 V
for BDX87B V CB = 80 V
for BDX87C V CB = 100 V
ICEO Collector cutoff for BDX87 VCE = 22 V
current (lB = 0) for BDX87A VCE = 30 V
for BDX87B V CE = 40 V
for BDX87C V CE = 50 V
lEBO Emitter cutoff VEB = 5V
current (lc = 0)
500 f1A
500 f1A
500 f1A
500 f1A
5 mA
5 mA
5 mA
5 mA
1 mA
1 mA
1 mA
1 mA
2 mA
V CEO(sus) * Collector-emitter
sustaining voltage
(lB = 0)
Ic = 100 mA
for BDX87
for BDX87A
for BDX87B
for BDX87C
45 V
60 V
80 V
100 V
VCE(sat) * Collector-emitter Ic = 6A IB =24 mA
saturation voltage Ic = 12A IB = 120 mA
VBE(sat) * Base-emitter Ic = 12A IB = 120 mA
saturation voltage
VBE * Base-emitter voltage Ic = 6A VCE = 3V
hFE * DC current gain Ic = 5A VCE = 3V
Ic = 6A VCE = 3V
Ic = 12A VCE = 3V
VF Parallel-diode IF = 3A
forward voltage
IF = 8A
hfe Small signal Ic =5A VCE = 3V
current gain f = 1 MHz
2 V
3 V
4 V
2.8 V
1000 -
750 18000 -
100 -
1.8 V
2.5 V
25 -
* Pulsed: pulse duration 300 f1s, duty cycle
196
1.5%

I
I
Safe operating areas
(for BDX87 and BDX87 A)
IC
(A)
10
IC MAX PULSEDWl
DC OPERATION
*PULSE
OPERATION
I I \
-FOR SINGLE NON REPETITIVE'
PULSE
" , lms
"- ~
l00,..s
/
,
5ms
G -2383
Ie MAX CONTINUOUS
I"-
BDX87-
----
BDX8iA
~
Safe operating areas
(for BDX87B and BDX87C)
IC
(A)
10
10
G -2385
IC MAX PULSEDWJj * PULSE OPERATION l-
IC MAX CONTINUOUS .... ~ l00fJs
DC OPERATION
I"
" lms
"
- FOR SINGLE NON REPETITIVE
PULSE
" ~ 5ms
!\ '
~\
BDX87B
BDX87C
10
197

-~ -.~- I
DC current gain
v
/'/ !, 'I I II.
103B~~ma
~
I C
(A)
12
DC transconductance
±
I
II
I
II
I
I
I
VCE =3V
--
G 3766
-------~
--
_.-
-~
.- ~-
- e~
0.8 1.6
Collector-emitter saturation
voltage
Collector-emitter saturation
voltage
10-1
---
Ih FE;250
11 I~-
I
I
,
!
I
_..
,
l' /
, , I
I I I
I i I I I Ii
! III I
I I 1111
I ' III: I Iii
4 6 •
I
!
I
I I
G 4871,
I! I
III
I
VCE(sat )
(V)
i
I
I
I
-
~
10-1 10
,
I
-+ , !
4 68 4 68
I
,
(,-3753
II
IcH
,~~ r
lOA I
12A
-
IJ
T
,
T
, 68
IS (mAl
198

Base-emitter saturation voltage
Small signal current gain
VSE(sat )
IV)
10-1
-
7-
,
l' 1;'-;'E;25 I
--- .
~
--
G 4873
---, -- --
I nl-'
,
I , I ! !il : ! i '
I
I
I
I
I
I II III11I
,
1 10 lelA)
I
10'
-
'=- 6
,
,
,
"\.
G 3768
'
6
'r---'-r
;
I I
10'
a
>- -r t---
'1-- VCE.JV
10
~ t--rr, C'
\ i
II111111
as
" I> e 2 ~ I> B 4
10-3 10-' 10-' f (MHz)
Collector-base capacitance
Saturated switching characteristics
CCBO
IpF )
6
G-4815
t
(,us)
G 4B76
10'
I
,
-r-
r--
,
L
,/
I
I
.....
!
~
tf
: i
I VCC~30V
IBI =lS2 I I
hFE-250 F Ft
~ ton
i ,
I [
10
,0
I
I
6 ,
10 'ciA)
199

EPITAXIAL-BASE PN P
POWER DARLINGTONS
The BDX 88, BDX 88A, BDX 88B and BDX 88C are silicon epitaxial-base PNP power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary NPN types are the BDX 87, BDX 87A, BDX 87B and BDX 87C
respectively.
ABSOLUTE MAXIMUM RATINGS
BDX88 BDX88A BDX88B BDX88C
Vcso COllector-base voltage (IE = 0) -45V
V CEO Collector-emitter voltage (Is = 0) -45V
T j Junction temperature
V EBO
Ie
leM
Is
P tot
T stg
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tease';;; 25°C
Storage temperature
-60V -80V
-60V -80V
-5V
-12A
-18A
-0.2A
120W
-65 to 200°C
200°C
-100V
-100V
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
• i
c
r--------l
i
I
L ______.~ ~~~~~~
5,103711
I
Dimensions in mm
10/82 200

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.4S 'C/W
ELECTRICAL CHARACTERISTICS (Tease
2S'C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO Collector cutoff for BDX88 V CB = -4S V
current (IE = 0)
for BDX88A V CB = -60 V
for BDX88B V CB = -SO V
for BDX88C V CB = -100 V
Tease = 1S0'C
for BDX88 V CB = -4S V
for BDX88A V CB = -60 V
for BDX88B V CB = -SO V
for BDX88C V CB = -100 V
IcEO Collector cutoff for BDX88 V CE = -22 V
current (IB = 0)
lEBO Emitter cutoff V EB = -S V
current (Ic = 0)
for BDX88A V CE = -30 V
for BDX88B V CE = -40 V
for BDX88C V CE = -SO V
VCEO(sust Collector-emitter Ic = -100 mA
sustaining voltage
for BDX88
(IB = 0)
for BDX88A
for BDX88B
for BDX88C
VCE(sat) * Collector-emitter Ic = -6A IB = -24 mA
saturation voltage Ic = -12A IB = -120 mA
VBE(Sat) * Base-emitter Ic = -12A IB = -120 mA
saturation voltage
V BE * Base-emitter voltage Ic = -6A VCE = -3V
hFE * DC current gain Ic = -SA V CE = -3V
Ic = -6A V CE = -3V
Ic = -12A VCE = -3V
VF Parallel-diode IF = 3A
forward voltage IF = SA
hIe Small signal Ic =-SA V CE = -3V
current gain f = 1 MHz
-SOO
-SOO
-SOO
-SOO
[LA
[LA
[LA
[LA
-S mA
-S mA
-S mA
-S mA
-1 mA
-1 mA
-1 mA
-1 mA
-2 mA
-4S V
-60 V
-SO
V
-100 V
-2 V
-3 V
-2.S
-4 V
V
1000 -
7S0 1S000 -
100 -
1.S V
2.S V
3S -
* Pulsed: pulse duration 300 [Ls, duty cycle
201
1.S%

Safe operating areas
(for BOX88 and BOX88A)
-IC
(A)
10
IC MAX PULSED
IC MAX CONTINUOUS
*PULSE ~RATION
,
"-"
.J' "
I "-
,
*FOR SINGLE NON REPETITIVE \
PULSE
DC OPERATION
lOOjJs
lms
5ms
G-2384
\,
BDX88- --t
BDX88A
I
Safe operating areas
(for BOX88B and BOX88C)
-Ie
(A)
10
10
10 2 -VCE(V)
",
IC MAX PULSED *PULSE OPERATION
IC MAX CONTINUOUS
"
lOOps
lms
."
"-
DC OPERATION I "-
III \ \
~\
*FOR SINGLE NON REPETITIVE
PULSE
5ms
-
G 238611
BDX88B
BDX88C
10
202

DC current gain
G -' ...
-IC
(A)
DC transconductance
I
VCE =-3V
G-3142
10'
•
10'
•
VCp3V
_I"""
- ..
12S-C I
,/ , 1-
25"

Base-emitter saturation voltage
Small signal current gain
B
6
G -374.1."
10 3 B
1'\
, .. , ..
1 10
II
, 6'
10' , 6~
'f=
2)--
10 B
Tease = 25'C
VCE =-3V
IC= -SA
, "
, .,
10-1
, .,
\
, "
f (MHz)
CCBO a
(pF)
Collector-base capacitance
G~ 3743
t
(psI'
Saturated switching characteristics
G ....
10'
a
,---- --
- --
.......
V CC =-30V
hFE=250
1B1=IB2
~
Is
....... , ton
......
10
• a
10
• a
-VcB(V)
10
. ,
IC(A)
204

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS
The BOY 57 and BOY 58 are silicon multiepitaxial planar NPN transistors in
Jedec TO-3 metal case, intended for use in switching and linear applications
in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
VCSO Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (lc = 0)
Ic Collector current
Is Base current
P tot Total power dissipation at Tease ,,;25°C
T stg Storage temperature
T j Junction temperature
BOY 57 BOY 58
120V 160V
80V 125V
10V
25A
6A
175W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR~~
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-3
205
5/80

THERMAL DATA
Rth j-ease Thermal resistance junction-case max °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBo Collector cutoff VCB = 120V 1 mA
current (IE = 0)
ICER Collector cutoff VCE = 80V 10 mA
current RBE = 100
Tease = 100°C
lEBO Emitter cutoff VEB =10V 0.5 mA
current (Ic = 0)
V CEO (sus)*Collector-emitter
Ic = 100mA
sustaining voltage for BOY 57 80 V
for BOY 58 125 V
V(BR) CBO * Collector-base Ic = SmA
breakdown voltage for BOY 57 120 V
for BOY 58 160 V
V(BR) ESO * Emitter-base IE = SmA 10 V
breakdown voltage
(Ic = 0)
VCE sat * Collector-emitter Ic = 10A Is = 1A 0.5 1.4 V
saturation voltage
VSE sat * Base-emitter Ic = 10A Is = 1A 1.4 2 V
saturation voltage
206

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
hFE * DC current gain Ie = 10A VeE = 4V 20 60 -
Ie = 20A VeE = 4V 15 -
Tease = -30°C
Ie = 10A VeE = 4V 10 -
fT Transition Ie = 1A VeE = 15V 7 MHz
frequency
f = 10MHz
ton Turn-on time Ie = 15A IB1 = 1.5A 1 JLS
toff Turn-off time Ie = 15A IB1 = -IB2 = 1.5A 2 JLs
Clamped Es/b V(Clamp) = 125V 15 A
Collector current L = 500JLH
* Pulsed: pulse duration = 300JLs, duty cycle ,,;::;2%.
207

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED TRANSISTORS
The BDY 90, BDY 91, BDY 92 are silicon multiepitaxial planar NPN transistors
in Jedec TO-3 metal case intended for use in switching and linear applications
in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEV
V CEO
V EBO
Ic
Collector-emitter voltage (VBE = -1,5V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;;25°C
Collector-base voltage {IE = 0)
ICM
IB
P tot
T stg Storage temperature
T j Junction temperature
BOY 90 BOY 91 BOY 92
120V 100V
120V 100V
100V 80V
6V
10A
15A
2A
60W
-65 to 175°C
175°C
80V
80V
60V
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
5/80 208

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 2.5 DC/W
ELECTRICAL CHARACTERISTICS (Tease = 25 DC unless otherwise specified)
Parameter
Test conditions
Icso Collector cutoff Vcs = Vcso max
cu rrent (IE = 0)
ICEV Collector cutoff VCE = VCEV max
current
Tease = 150 DC
(VSE = -1.5V) VCE = VCEV max
lEBO Emitter cutoff VES = 6V
current (Ic = 0)
VCEO (sus)·Collector-emitter Ic = 100mA
sustaining voltage for BOY 90
(Is = 0) for BOY 91
for BOY 92
VCE (sat)
. Collector-emitter Ic = 5A Is = 0.5A
saturation voltage Ic = 10A Is = 1A
for BOY 90, BOY 91
for BOY 92
VSE (sat)
. Base-emitter Ic = 5A Is = 0.5A
saturation voltage Ic = 10A Is = 1A
.
hFE DC current gain Ic = 1A VCE = 2V
Ic = 5A VCE = 5V
Ic = 10A VCE = 5V
ft Transition Ic = 0.5A VCE = 5V
frequency
f = 5MHz
ton Turn-on time Ic = 5A IS1 = 0.5A
Vcc = 30V
ts Storage time Ic = 5A IS1 =-ls2=0.5A
Fall time
Vcc = 30V
tf
Min. Typ. Max. Unit
1 rnA
1 rnA
3 rnA
1 rnA
120 V
100 V
80 V
0.5 V
1.5 V
1 V
1.2 V
1.5 V
35 -
30 120 -
20 -
70 MHz
0.35 f.Ls
1.3 f.Ls
0.2 f.Ls
• Pulsed: pulse duration = 300f.Ls, duty cycle :;::;2%.
209

EPITAXIAL PLANAR N PN
HIGH CURRENT, GENERAL PURPOSE TRANSISTOR
The BFX 34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case,
intended for high current applications.
Very low saturation voltage and high speed at high current levels make it ideal for power
drivers, power amplifiers, switching power supplies relay drivers, inverters.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Total power dissipation at Tamb .;;; 25°C
Tease';;; 25°C
Storage temperature
Junction temperature
120 V
60 V
6 V
5 A
0.87 W
5 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~~
MECHANICAL DATA
Dimensions in mm
6/77 210

THERMAL DATA
Rlh j-ease
Rlh j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
35 °C/W
200 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min_ Typ. Max. Unit
ICES Collector cutoff VCE = 60V
current (VBE = 0)
lEBO Emitter cutoff VEB = 4V
current (lc = 0)
0.02 10 I1A
0.05 10 [LA
V(BR)CBO* Collector-base
breakdown voltage
(IE = 0)
Ic
= 5mA
120 V
V CEO (sust Collector-emitter
sustaining voltage
(lB = 0)
Ie
= 100mA
60 V
VEBO * Emitter-base IE = 1 mA
voltage
(I c =0)
6 V
VCE(Salt
Collector-emitter
saturation voltage
Ie = 5A IB = 0.5A
0.4 1 V
VBE (salt
Base-emitter
saturation voltage
Ie = 5A IB = 0.5A
hFE * DC current gain Ie = 1A VeE = 2V
Ie = 1.5A VCE = 0.6V
Ic = 2A VCE = 2V
fT Transition frequency Ie = 0.5 A VCE = 5V
f = 20 MHz
CEBO Emitter-base Ie = 0 VEB = 0.5V
capacitance f .
= 1 MHz
CeBo Collector-base IE = 0 VeB = 10V
capacitance f = 1 MHz
1.3 1.6 V
100 -
75 -
40 80 150 -
70 100 MHz
300 500 pF
40 100 pF
ton
toff
Turn-on time
Turn-off time
Ie = 5A Vee= 20 V
IB1 = -IB2 = 0.5 A
0.25 0.6 I-'s
0.6 1.2 I-'s
* Pulsed: pulse duration = 300 I-'s, duty cycle = 1.5%
211

Safe operating areas
DC current gain
IC ,
(A) ,
10-' ,
10-2
11(' MAX
IC MAX
I"- 1~
PERMISSIBLE
EXTENSION OF
PULSED OPERATION
DC OPERATION ~~~~T~
........
G 2514
VCEO MAX-
, . , .
10 VCE (V)
200
ISO
100
50
°
V
I IIIII
VCE =2V
,
~
, " , '8
I IIIII
I IIIII
amb =~·C
25·C
i\
r"\
G 2509
4 " 4 £; 8
10 10' 10' Ic (mA)
IC
(A)
o.e
o.S
0.4
0.2
°
Output characteristics
lOmA
....
9mA
//
8mA
/ 7mA
'/
'/
'/
V/'
j ~ ....
~'
SmA
5mA
4mA
13m'
"m'
ImA
IB=O
G - 2507
0.2 0.4 o.S 0.8 VCE (V)
IC
(A)
0.8
0.6
0.2
°
Output characteristics
I
y
BmAj /rnA
'II""
rt./
SmA
m
/
4mA
/
3mA
~
2mA
G- 2508
~
Tamb =125"

Collector-emitter saturation voltage
Base-emitter saturation voltage
veE (sal}
(V) •
hFE=10
G 1510
VBE(sal}
(V)
1.6
II
hFE"10
G 2511
10-'
•
,
,
10- 2
Tamb =12S'C
~
, 6 • , .. , ..
10- 1 Ie (A)
1.2
O.B
0.4
o
f--
Tam b=2:;Y V
I- ~
l-- I---~
~
, • 8
10- 2 10-1 Ie (A)
Small signal current gain
, = 20MHz
i-
0cE =5V
G 2512
e
(pF) 8
10'
Emitter-base and collector-base
capacitances
G 25U -
""'"
~
........ ......
r-..
~B
o
./
...... V
. . ..
le(A}
10
T"'-... T"'"
, .. • , ..
1 10 VR (V)
213

EPITAXIAL PLANAR PN P
HIGH CURRENT, GENERAL PURPOSE TRANSISTOR
The BSS 44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is
used for high-current switching and power amplifier applications up to 5A.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (IB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
P tot Total power dissipation at T amb .;;;; 25°C
Storage temperature
Junction temperature
Tease ';;;;25°C
INTERNAL SCHEMATIC DIAGR4 :
-65
-60
-6
-5
0.87
5
-65 to 200
200
v
V
V
A
W
W
°C
°C
MECHANICAL DATA
Dimensions in mm
6/77 214

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
35 °C/W
200 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICES Collector cutoff VCE = -60V
current (VBE = 0)
V(BR)CBO Collector-base Ic = -1 mA
breakdown voltage
(IE = 0)
VCEO(SUS) * Collector-emitter Ic = -50 mA
sustaining voltage
(lB = 0)
V EBO• Emitter-base IE = -1 mA
voltage
(Ic =0)
VCE(sat) * Collector-emitter Ic = -0.5A IB = -50mA
saturation voltage Ic· = -5A IB = -0.5A
VBE(sat) * Base-emitter Ic = -0.5A IB = -50mA
saturation voltage Ic = -5A IB = -0.5A
hFE * DC current gain Ic = -0.5A VCE = -2V
Ic = -2A VCE = -2V
Ic = -5A VCE = -2V
fT Transition frequency Ic = -0.5A VCE = -5V
CCBO Collector-base IE = a VCB = -10 V
capacitance f = 1 MHz
tan
Turn-on time
Ic = -0.5A Vcc= -20V
toff Turn-off time IB1 = -IB2 = -50mA
-0.5 fLA
-65 V
-60 V
-6 V
-0.1 V
-0.4 -1 V
-0.8 V
-1.1 -1.6 V
30 -
40 70 -
45 -
80 MHz
100 pF
0.065 fLs
0.45 fLs
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
215

Safe operating areas
DC current gain
-Ie e
(A) 6 Ie MAX
oe OPERATION ,
"
G-2S60
PULSE OPE RATIO
'\
~
/' \ 100 ~
150
G_2SS9
• FOR SINGLE NON
REPETiTIVE PULSE
"
"
100
50
, 6 , , 68 , 68
10. -VeE (V)
-IC (A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
-VCE(sa
(V)
G-2S s.
-IC
(A)
I
G -2557
hFE =10
hFE=lO
0.5
I
/
V
/'
L ....
)
-Ie (A)
0.5
216

Transition frequency
Collector-base capacitance
fT
(MHz)
VCE =-5V
G -2553
CCBO
(pF)
•
,
G -, 555
100
50
V
/'
/'
i"
---
-IC (A)
10'
10
'""",
..........
, .
10
........
-
Saturated switching characteristics
Power rating chart
I
(ns)
,
•
G-2556
Ptot
(W)
6-2554
10'
,
r..........
~
'"
'>
/Ion
I
s
I'
r-..
i'
.......
"
"'
!'....
~
VCC=-20V
hFE=10
Ip=10JJS
181 =-182
r- If
2.5
10
1
50 100 150 Tcas~(OC)
217

EPITAXIAL PLANAR NPN
HIGH VOLTAGE SWITCH
The SSW 67 and SSW 68 are silicon epitaxial planar NPN transistors in Jedec TO-39
metal case. They are intend~d for high voltage inductive load switching applications.
ABSOLUTE MAXIMUM RATINGS
V C80 Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (18 = 0)
Ic Collector current
ICM Collector peak current
P tot
Total power dissipation at T amb"';; 45°C
Tease"';; 25°C
Tease"';; 1 OO°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC DIAGR:4 :
BSW 67 BSW 68
120V 150V
120V 150V
1.5A
2A
0.7W
5W
2.85W
-65 to 200°C
200 °C
MECHANICAL DATA
Dimensions in mm
6/77 218

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
35 °C/W
220 °C/W
ELECTRICAL CHARACTERISTICS (T case
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff for BSW 67
current (IE = 0) VCB = 60 V
VCB = 60 V T case = 150°C
for BSW 68
VCB = 75 V
VCB = 75V T case = 150°C
V(BR)CBO Collector-base Ic = 100 [LA
breakdown voltage for BSW 67
(IE = 0) for BSW 68
V CEO (sust Collector-emitter Ic = 100 mA
sustaining voltage for BSW 67
(IB = 0) for BSW 68
V EBO * Emitter-base IE = 100 [LA
voltage
(lc =0)
V CE (sat)* Collector-emitter Ic = 0.1 A IB = 0.01 A
saturation voltage Ic = 0.5 A IB = 0.05 A
Ic = 1 A IB = 0.15 A
100 nA
50 flA
100 nA
50 flA
120 V
150 V
120 V
150 V
6 V
0.15 V
0.5 V
1 V
VBE (sat) * Base-emitter Ic = 0.1 A IB = 0.01 A
voltage Ic = 0.5 A IB = 0.05 A
Ic = 1 A IB = 0.15A
hFE * DC current gain Ic = 0.1 A VCE = 5V
Ic = 0.5 A VCE = 5V
Ic = 1 A VCE = 5V
0.9 V
1.1 V
1.2 V
40 -
30 -
15 -
fT Transition frequency Ic = 100mA VCE = 20 V
CCBO Collector-base IE = 0 VCB = 10 V
capacitance f = 1 MHz
80 MHz
35 pF
ton
toft
Turn-on time
Turn-off time
Ic = 0.5 A Vcc= 20 V
IB1 = -IB2 = 0.05 A
0.3 [Ls
1 [Ls
* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
219

Safe operating areas
DC current gain
Ie 8 --
(A)
6~
Ie MAX
I--I-k
B r:='
61-__ .
De OPERATION
I
III
! i II I
---I--
"
10-1
8 *FOR SINGLE NON
REPETITIVE PULSE
* PULSE
OPERATION
lms 1001's
I 1.1 '
j\
! I --lBSW6S-
BSW67
10-2 T II' I II II
B
B
10 10'
I
,
:
G- 245 J1 I
-"
, 68
VeE (V)
100
50
o
v P
10-2
8
10-'
veE =5V
G 2452
1\
'\
\
, '8
Ie (A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat
(V)
0.6
0.4
0.2
o
)
G 2450
hfE =10
/
V
j.....
, '8 , '8
10- 1 Ie (A)
Ie
(A)
o
hFE = 10
I
J
I
7
G 2451
0.5 veE (sat) ('I)
220

Transition frequency
Collector-base capacitance
'T
(MHz)
G-2658
eeeo
(pF)
G -2454
veE = 20V
60
100
50
o
V
./
,-
..
"
l\-
\
. ,
Ie (A)
40
20
10
1\
\
\
1\
\
IpO
,
10
"i'
, .,
~
la'
, ..
VeB (V)
Saturated switching characteristics
Power rating chart
I
(".) , __ I.
hFE=IO
Vee =20V
Ip =10".
181"-IB2
G 2189
Piol
(W)
G-2455
4
l"'-
f'...
I"'-
~ Ion
./
""
"
~ ......
If
••
• •
Ie (A)
a
50 lOa
"
150 Tcase('C) "
221

EPITAXIAL PLANAR NPN
HIGH CURRENT,GENERAL PURPOSE TRANSISTOR
The BU 125 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
used in TV horizontal output and general purpose applications.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (IB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic Collector current
P tot Total power dissipation at Tamb ,,;; 25°C
Tease ";;50'C
Storage temperature
Junction temperature
130
60
6
7
1
10
-65 to 200
200
v
V
V
A
W
W
'C
'C
INTERNAL SCHEMATIC DIAGR~4:
MECHANICAL DATA
Dimensions in mm
,', ,',' , \,
.q()tI~rqr Cqnnllcted tqCflS~
'TQ-,39
6/77 222

THERMAL DATA
Rth j-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
15 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (T case
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff VCB = 100 V
current (IE = 0)
V (BR) CBO * Collector-base Ic = 1 mA
breakdown voltage
(IE = 0)
V(BR)CES* Collector-emitter Ic = 1 mA
breakdown voltage
(VBE = 0)
V CEO (sust Collector-emitter Ic = 50 mA
sustaining voltage
(IB = 0)
VEBO ... Em itter -base IE = 1 mA
voltage
(Ic =0)
VCE(sat) * Collector-emitter Ic = 1 A IB = 0.1 A
saturation voltage Ic = 5A IB = 0.5 A
VBE(satt Base-emitter Ic =1A IB = 0.1 A
saturation voltage Ic = 5A IB = 0.5 A
hFE * DC current gain Ic = 0.1 A VCE = 2 V
Ic = 5A VCE = 2 V
fT Transition frequency Ic = 0.5 A VCE = 5V
CCBO Collector-base IE = 0 VCB = 10 V
capacitance f = 1 MHz
toll Turn-off time Ic =5A Vcc= 20 V
IBI = -IB2= 0.5 A
0.02 10 !-LA
130 V
130 V
60 V
5 V
0.25 V
1.2 V
0.9 1 V
1.3 1.6 V
40 155 -
15 60 -
50 MHz
80 pF
0.65 f1s
* Pulsed: pulse duration 300 !-Ls, duty cycle
223
1.5%

Safe operating areas
DC current gain
G-2577
Ie • "irMA PULSE PERATION
o-2576
(A) 6
DC OPERATION
""
'Ims
'-:
150
V
i7
J..-
I\,.
'\
·FOR SINGLE NON
REPETITIVE PULSE
1\
100
Vr" =2V \
50
,
..
10 VeE (VI
o
IC
(A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
"FE =10
·2582
Ie
(A)
8
hFE=10
0-2581
6
II
4
0.5
o
/
V
1/
V
Ie (A)
0.5 1.5 VBE(sa1) (V)
224

I
F
Transition frequency
Collector-base capacitance
fT
MHz)
VcE=5V
V
...... I-- t-...
G 2579
eeBO
(pF)
60
\
G-256B
100
50
/
V
/
1/
V
V
"0
20
I--.
o
Ie
(A)
20 "0 60 VeB (V)
Saturated switching characteristics
Power rating chart
t
(ns) 8
Ptot
(W)
0-2578
10'
"'"
""-!s
......
"
If L /"
Ion
10
---~ - ---
10
Vee=20V
hFE=10
IB1 =- IBi
, .
Ie (A)
" "
" "-
" "
1'-...
50 100 150 Tease "(Oe)
225

EPITAXIAL PLANAR NPN
HIGH VOLTAGE POWER AMPLIFIER
The BU 125S is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
intended for general purpose, linear and switching applications.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEV Collector-emitter voltage (V BE = -1 .5V)
V CEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (repetitive)
IB Base current
P tot Total power dissipation at T amb ~ 25°C
Tease ~ 50°C
Storage temperature
Junction temperature
250
250
150
6
3
5
0.5
1
10
-65 to 200
200
V
V
V
V
A
A
A
W
W
°C
°C
INTERNAL SCHEMATIC DIAGR:~'
MECHANICAL DATA
. . .
'. . Collector . cl?f:lnect!ld to: c~~e
E
Dimensions in mm
TO-39
6/77 226

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
15 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (T case
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff VCB = 200 V
current (IE = 0)
lEBO Emitter cutoff current VEB = 6V
(lc = 0)
VCBO Collector-base Ic = 1mA
voltage (IE = 0)
V CEO (sus)* Collector-emitter Ic = 20 mA
sustaining voltage
(lB = 0)
VCE (sat) Collector-emitter Ic = 500mA IB = 50mA
saturation voltage
hFE DC current gain Ic = 5 mA VCE = 10V
Ic = 250mA VCE = 3V
fT Transition frequency Ic = 100mA VCE = 10V
CCBO Collector-base IE = 0 VCB = 20 V
capacitance f = 1 MHz
10 fLA
1 mA
250 V
150 V
1.5 V
30 -
30 -
15 MHz
35 pF
ton
toll
Turn-on time
Turn-off time
Ic = 0.5 A Vcc= 20 V
IB1 = -IB2 = 0.05 A
0.3 fLs
1 fLs
* PAJlsed: pulse duration = 300 fLs, duty cycle = 1.5%
227

Safe operating areas
DC current gain
IC B
(A) 6 IC MAX PULSED
IC MAX CONTINUOUS
• PULSE
OPERATION
rq mv
Im5 100"5\
G 2460
-- -"
100
VCE =5V
G 2459
DC
OPERAT IONV
* FOR SINGLE NON \
REPETITIVE PULSE
50
........ r-..
\ ,
~
\
10-2
B , 6' , 6'
10 10' VCE (V)
o
• 'B , ,B • 'B
10-2 10" IC (A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(5at
(V)
)
G - 24
57
IC
(A)
G-2458
0.6
0.4
0.2
hFE =10
j
/
V
1
II
'-~-
hFE = 10
I
II
II
J
I
I
B
10- 1
J....
• 'B
IC (A)
os
....
J
VBE(sat) (V)
228

Transition frequency
Collector-base capacitance
fT
(MHz)
G 2463
ccao
(pF)
G-2461
1\
\
\
\ IE·O
80
60
60
40
~
// f\
/
\
V
VCE .5V
40
20
\
20
o
..
IC
(A)
10
8
10
'" ' .....
~
8
10'
, '8
Vca (V)
Saturated switching characteristics
Power rating chart
t
()JS) 8
hFE ·l0
Vcc .20V
Ip.lO)Js
Isf-IS2
G 259611
P tot
(W)
15
G - 24
62
--~
10
./
.......
~ Ion .........
~
tf
to-I
..
10- 1 IC (A)
a
50 100
'" ~
150 T case (OC)
229

EPITAXIAL PLANAR NPN
HIGH VOLTAGE SWITCH
The BU 325 is a silicon planar epitaxial N PN transistor in Jedec TO-126 plastic case.
It is intended for high voltage, high current linear and switching applications.
ABSOLUTE MAXIMUM RATINGS
V CBO llector-base voltage (I E = 0)
V CEO llector-emitter voltage (I B = 0)
V EBO Emitter-base voltage ( I c = 0)
Ic llector current
IB Base current
P tot Total power dissipation at T amb :0::25 DC
Storage temperature
Junction temperature
T case:O::25 DC
200 V
200 V
5 V
3 A
1 A
1.25 W
25 W
-65 to 150 DC
150 DC
INTERNAL SCHEMATIC DIAGR~:':
MECHANICAL DATA
Dimensions in mm
2.7"""
7.8"""
0.9""" 1.2
U58
TO-126 (SOT-'32)
5/80 230

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambo
max 5
max 100
°C/W
°C/W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max.
ICBO Collector cutoff V CB=200V 100
current (I E=O)
VCBO Collector base Ic =1001lA 200
breakdown voltage
(IE=O)
V CEO (sus) *Collector-emitter Ic =10mA 200
sustaining voltage
(IB = 0)
V EBO * Emitter-base IE =1mA 5
voltage
(lc=O)
V CE (sat) * Collector-emitter Ic =150mA IB =15mA 0.06 1.0
saturation voltage Ic =500mA IB =50mA 0.10 1.5
V BE(sat) * Base-emitter Ic =150mA IB =15mA 0.73 1.0
saturation voltage Ic =500mA IB =50mA 0.80 1.2
h FE * DC current gain Ic =50mA V CE=5V 30 200
Ic =150mA V CE=5V 30 200
Ic =500mA V CE=5V 30 200
Unit
IlA
V
V
V
V
V
V
V
-
-
-
231

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
fT Transition Ie =500mA V eE=5V 40 MHz
frequency
CeBo
Collector-base
capacitance
'E =0
f =1 MHz
Ves=10V 50 pF
ton Turn-on time Ie =0.5A I B1 =50mA 0.3 I1S
Vec=20V
tott Turn-off time Ie =0.5A
I B1 =-1 B2 =SOmA 1 I1S
Vec=20V
* Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%
Safe operating areas Ie 8
(A)
6
4 Ie MAX
8
2
6
4
PULSE OPERATION"
'\
De OPERATION
2 • FOR SINGLE NON
10 - 1 IREPETITIVE PULSE
s
6
·4
2
G-3979
, ~ V
1ms
\
\
\ \
\
"-,
10 )JS
100 fJs
10-2
4 6 S
10
4 6 S 4 6 8
10 2 VeE (V)
232

DC current gain
Collector-emitter saturation voltage
G- 2£.59
VCE(sal)
(V)
G 2457
; I
veE _5V
0.6
100
50
V
\ ,
1\
\
0.4
0.2
hFE _10
I'
I'
J
/
/
, 1', !
I ,I! I
I ·'1:
/ I I
o
, 68 I , 68 I , 68
10-'
Ie (A)
j....-f.'
, 68 6 , , 68
II
10-'
Ie (A)
Ie
(A)
Base-emitter saturation voltage
G -24'•
fT
(MHz)
Transition frequency
G 2463
hFE = 10
I
I
.1
I
I
II
-r-r-
80
60
40
'"
j" \
V 1\
VeE =5V
V
20
J
o
./
0.5 VBE(sat) (V)
o
6 8
10- 1
Ie (A)
233

Collector-emitter saturation voltage
Saturated switching characteristics
CCBO
(pF)
G-2461
t
(}JS)•
6
G-2698/1
60
40
1\
'\
\
1\ 1£=0
1\
t---~
hFE =10
Vec =20V
tp =10}JS
lSI =-IS2
20
10
"- r'-.r-
.......... ...
, , .. , ,.
10 10' VCB (V)
10-1
io-=- ton
f
~
"- ~
, .
Ie (A)
Power rating chart
G 3978
Ptot
(W)
30
I-
l\
20
1'\
10
r...
r-.. r... r...
o
50 100 150 Use (OC)
234

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The au 326 is a silicon multiepitaxial mesa NPN transistor in a Jedec T0-3 metal case
particularly intended for switch-mode CTV supply system.
ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (V BE=O)
Collector-emitter voltage (I 8=0)
Base-emitter voltage (I c= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case $25 °C
Storage temperature
Junction temperature
800 V
375 V
10 V
6 A
8 A
3 A
75 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~4
MECHANICAL DATA
Dimensions in mm
235
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 2.33 °C/W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff V cE=800V 1 mA
current (V SE=O) V CE=800V T case=125°C 2 mA
IESO Emitter cutoff V Es=10V 10 mA
current (I C = 0)
V CEO (sus) • Collector-emitter Ic =100mA 325 V
sustaining voltage
(18 = 0)
VCE(sat) • Collector-emitter Ic =2.5A Is =0.5A 1.5 V
saturation voltage Ic =4A Is =1.25A 3 V
VSE(sat) • Base-emitter Ic =2.5A Is =0.5A 1.4 V
saturation voltage Ic =4A Is =1.25A 1.6 V
h FE • DC current gain Ic =1A V CE=5V 25 -
ton Turn-on time Ic =2.5A I S1 =0.5A 0.5 ~s
V cc=250V
ts Storage time Ic =2.5A I S1 =0.5A
I S2 =-1A V cc=250V 3.5 ~s
t f Fall time Ic =2.5A I S1 =0.5A
I B2 =-1A V cc=250V 0.5 ~s
• Pulsed: pulse duration =300 ~s, duty cycle =1.5%
236

Safe operating areas
Ic
(A)
2
1.! Ulllll :J.~
Icw.x FU.SED
6
I,.MAX CONT.
4 1111 lIIo..
DC OPERA roN
2
II I~
2 • Fm SINGLE I'0Il
REPElTTlVE PJl Sf.
10-1
B
6
I - Area of permissible
operation during •
turn-on provided R BE
2
:::; 1000 and tp :::; 0.6 10-2
IlS
B
6
11- Area of permissible
4
operation with V BE :::;
2
o and tp :::;2 IlS
8
6
4
3
2 • 68 2 • 6 8
10
1\
.,
~
.1.
lint
1)\15
I~
Dna
I
G-4071
2 68 2 4 6.
375 100 101
Derating curves
G 3665
Thermal transient response
f-e--
f"'III ~
t-..;: r-...~(IAtI~
i' " D
......
!'-...
0.5
1'-.. I ........ (}s~-"I ..... jo..,.
,.....~4I.-f-~
N'r~ -I-
~ ,.;;;:
a 50 laO 150 Tcase ('C)
237

DC current gain
8
6
4
2
10
8
6
,
2
Tease= 125°C
....-
-30'C
J..---
6 8
10-1
i25"C
i
6 8
VCE =5V
~
I'-....
~
G - 34
52
,
IC(A)
t)
Collector-emitter saturation voltage
- f-
-
--------
--- _.- --
,--
-- -
0.5 - -
hFE=5
G - 345'<
"
Tease= 125- VI
III ~ 25'C
~-30'C
rill
o
6 8 6 8
I
IC (A)
Collector-emitter saturation voltage
iCE(sat )
(V)
3A
2A
IA
o
G-3453
IC =4A
11
,-;
0.5 1.5 Ie (A)
VBE(sat )
(V)
0.5
o
Base-emitter saturation voltage
G - 3457
hFE =5
rJ
I:/:~
~ V"...
Tease = ~30D
V/
......
25'~1-
125'C
• • 6 8
10-1
238

Saturated switching characteristics
,
Tease= 25-C
Is
---~ ---
B
6 r-...
Saturated switching characteristics
G - 3455 G 3802
Vee = 2SOV
hFE =5
IB2 =-2IBI
~
I
---~s
I ........
"-
4 -- / I, ./
'r-
B
6
r- 1-1-
I,
ton
;....-
......... .,/ , Ion
Vee = 250V
-' hFE =5
162 =-2IBI
T case=12S·C
--
---
Ie (A) 0.5
239

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BU 326A is a silicon multiepitaxial mesa N PN transistor in Jedec TO-3 metal case
particularly intended for switch-mode CTV supply system.
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V BE = 0)
V CEO Collector-emitter voltage (I B=O)
V EBO Emitter-base voltage (I c=O)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at T case::;25°C
T stg Storage temperature
T j Junction temperature
900
400
10
6
8
3
75
-65 to 200
200
V
V
V
A
A
A
W
°C
°C
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
.»1'0-3
5/80 240

THERMAL DATA
~h j-case Thermal resistance junction-case max 2.33 °C/W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff V CE=900V 1 mA
current (V BE=O) V CE=900V T case=125°C 2 mA
lEBO Emitter cutoff V EB= 10V 10 mA
current (I C = 0)
I
V CEO (sus) ·Collector-emitter Ic =100mA 400 V
sustaining voltage
(I B = 0)
VCE(sat) • Collector-emitter Ic =2.5A IB =0.5A 1.5 V
saturation voltage Ic =4A IB =1.25A 3 V
V BE(sat) • Base-emitter Ic =2.5A IB =0.5A 1.4 V
saturation voltage Ic =4A IB =1.25A 1.6 V
h FE • DC current gain Ic =1A V CE=5V 25 -
ton Turn-on time Ic =2.5A I B1 =0.5A
Vcc=250V 0.5 ~s
ts Storage time Ic =2.5A I B1 =0.5A
I B2 =-1A V cc=250V 3.5 ~s
t f Fall time Ic =2.5A I B1 =0.5A
I B2 =-1 A V cc=250V 0.5 ~s
• Pulsed: pulse duration =300 ~s. duty cycle =1.5%
241

~ -~ I
~
Safe operating areas
I - Area of permissible
operation during
turn - on provided
RBE =100n and tp:O;
0.6 IlS
11- Area of permissible
operation with V BE :0;
o and tp:O;: 21ls
Derating curves
G 3665
Thermal transient response
G-3668
.~. j
-1 '
0.5
i""t: ~
I
""~("" l' t' .... ?f'D
~
1'-, ' ......

10
8
6
4
2
8
DC current gain
I-~
Tease = 125°C VCE ~5V
.... 25'C
r-- ,
~
-30'C
f.-- . : -........
~
G - 3452
VCE(s.1 )
(V )
Collector-emitter saturation voltage
~~
r---- -- -
--- I--
+---
hFE,5
G - 3454
6
4
2
I ~
i
I
6 8 6 ,
0.5
o
--
J.
Tease= 125
1//
0
~ 25'C
II
~-30'C
II 1
6 8 6 8
IC (A)
VCE(sat )
(V)
o
Collector-emitter saturation voltage
IA
3A
2A
1\
\
t-
IC ~4A
1\
G -3453
0.5 1.5 Ie (A)
VSE(sat )
(V)
Q5
o
Base-emitter saturation voltage
6 ,
I I
, I
I
I
I
I
1
Tease = _30 0 ..-
.... -
125'J-._
1125'C
i
I
I
I
I
I
II
, hFE =5
,
I
G - 3457
rI
L,~
...........:: V/
,....,../
"
I,
I
I
6 8
243

Saturated switching characteristics
G - 3455
Vee· 250V
hFE .5
IB2' -21Bl
2 Tease= 25-C
B
2
--
-r- If
--V
10-1 Ion
Is---'
.............
-- _-=-=.c..=
./
V
"/
I
(jJ" I
10- '
Saturated switching characteristics
---
G 3802
,,-Is
........
2
2
-
-
Vee. 250V
hFE =5
182 =-2IBl
Tcase=125·C
'"
--
If ./
Ion
--
Ie (AI
0.5
244

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BU 326S is a silicon multiepitaxial NPN transistor in Jedec TO-3 metal case, particularly
intended for switch-mode CTV applications.
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V SE = 0) 800 V
VCEO Collector-emitter voltage (Is = 0) 400 V
V EBO Emitter-base voltage (Ic = 0) 7 V
Ic Collector current 6 A
leM Collector peak current 8 A
Is Base current 3 A
Ptot Total power dissipation at Tease ~ 75°C 60 W
Tstg Storage temperature
-65 to 175 °C
Junction temperature
175 °C
T j
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-3
245 5/80

THERMAL DATA
Rlh j-ease Thermal resistance junction-case max 1.67 °C/W
ELECTRICAL CHARACTERISTICS (Tease
25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICES Collector cutoff VCE = BOO V
current (V8E = 0) VCE = BOO V Tease = 150°C
lEBO Emitter cutoff VEB = 7V
current (lc = 0)
V CEO (sust Collector-emitter Ic = 100mA
sustaining voltage
(18 = 0)
VCE (sal)* Collector-emitter Ic = 2.5A 18 = 0.5A
saturation voltage Ic = 4A 18 = 1.25A
V8E (sal)* Base-emitter Ic = 2.5A 18 = 0.5A
saturation voitage Ic = 4A 18 = 1.25A
hFE * DC current gain Ic =4A VCE = 5V
fr Transition frequency Ic = 0.5A VCE = 10V
ton Turn-on time Ic = 2.5A Vcc= 250V
181 = 0.5A
1 mA
3 mA
1 mA
400 V
1.5 V
3 V
1.4 V
1.B V
3.5 10 -
20 MHz
0.3 [Ls
ts
t f
Storage time
Fall time
Ic = 2.5A Vcc= 250V
181 = 0.5A 182 = -1A
1.B [Ls
0.3 !tS
* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
246

Ie
(A)
10
Safe operating areas
Ie MAX PULSED
Ie MAX
eONTIN 0
I
De OPERATION
/'
.. PULSE OPERATION
l'...
6-2551
'" 1 0
lm~
10
DC current gain
--
............
i'.
1\
VeE=5V
G - 2S . 9
• FOR SINGLE NON
REPETITIVE PULSE
lOms
Tcase=75°C
I
II IIII
4 •• 4 ••
10 10'
4 ••
'icE (V)
6 ,
• •
Ie (A)
Collector-emitter saturation
voltage
I
hFE=5
G-2~3711
.Et..,
(V)
Collector-emitter saturation
voltage
6-2541
3
IIC=4A
3A
2
2A
lA
0.5
o
10-"'
/
./
~
Ie (A)
1
o
1\
0.5 .5
Ie (A)
247

Base-emitter saturation voltage
Small signal current gain
t)
G-254S
- 45
hFE=S
./
./
l.-'
10
\
IC·o.SA
VCp5V
0.5
.
IC
(A)
4 •• 4 ,.
10'" 1
10
1\
, ..
.f (MHz)
Collector-base capacitance
Saturated switching characteristics
CCBOa
(pF)
G-2S4Io
I
(JJs)
VCC=2S0V
hFE=S
IS2=-2Is,
-
It;-.....,
G 2705/1
10'
~
............ I
10
• 10
4 , •
""
10'
I
I
4 , •
Ves (V)
Ei 7 8 9
If
r--...L
--'
V
Ion
/
--r-.....
5
IC (A)
248

EPITAXIAL PLANAR N PN
HORIZONTAL TV DEFLECTORS
The BU 406, BU 406H and BU 408 are silicon epitaxial planar NPN transistors in Jedec
TO-220 plastic package. They are fast switching, high voltage devices for use in
horizontal deflection output stages of large screen MTV receivers with 110° CRT.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEV
V CEO
V EBO
Ic
Collector-emitter voltage (V BE = -1.5V)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Collector peak current (t = 10 ms)
Base current
Total power dissipation at T case";;; 25°C
Collector-base voltage (IE = 0)
ICM
ICM
IB
P tot
T stg Storage temperature
T j Junction temperature
400 V
400 V
200 V
6 V
7 A
10 A
15 A
4 A
60 W
-65 to 150°C
150 °C
INTERNAL SCHEMATIC DlAGR~~_~r
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
249
6/77

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.0S "C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease
= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff VCE = 400 V 5 mA
current (VSE = 0) VCE = 250 V 100 [LA
VCE = 250 V Tease = 150°C 1 mA
lEBO Emitter cutoff VEB = 6 V 1 mA
current (lc = 0)
VCE (sat)* Collector-emitter for BU406
saturation voltage Ic =5A Is = 0.5 A 1 V
for BU406H
Ic =5A Is = O.S A 1 V
for BU408
Ic =6A Is = 1.2 A 1 V
VSE (sat)* Base-emitter
for BU406
saturation voltage Ic =5A Is = 0.5 A 1.2 V
for BU406H
Ic =5A Is = O.S A 1.2 V
for BU408
Ic = 6 A Is = 1.2 A 1.5 V
fT Transition frequency Ic = 0.5 A VCE = 10 V 10 MHz
toff ** Turn-off time
[Ls
for BU406
Ic = 5A
for BU406H
Is end = 0.5A 0.75
Ic =5A Is end = O.SA 0.4 [Ls
for BU408
Ic = 6A Is end = 1.2A 0.4 [Ls
ISlb Second breakdown VCE =' 40 V t = 10ms 4 A
collector current
* Pulsed: pulse duration = 300 [Ls, duty cycle 1.5%
** See test circuit
250

DC current gain
Collector-emitter saturation voltage
G 2653
VCE(sat)
(V) ,
-
G 2651
10
VCE ;5V
por---
r-....
,
~ t"-,
10,
I--
f--.J--
hFE;IO
Tease ;125'C./
-
25'C
e.--
,
6 "
IC(A)
10-'
i
6 "
I
6 8
IC (A)
Base-emitter saturation voltage
Collector cutoff current
VSE(sal )
(V)
1.5
hFE _I
G 2652
ICES"
6
(nA),
,
10'
G 1365/2
+- "7
VCE;300V
./
0.5
Tease = 25°C -- ....-
- .......-IllO-C
"
, , 6 , , , 6
,
IC (A)
·
10'
"
- -
10
,
· ,
,
./
,/
25 50 75
251

Storage time
Fall time
10-1
8
)
,
,
·
·,
,
·
0
,
,
,
*MAX.
TYR
*MIN.
25 50
See test circuit
-0-
*",90'" CONFITT
G 1367 G 1366
8
0
,
.
-
0
,
*MAX.
TYP.
f-- , *MIN.
10- 1 .
10-2
75 25 50 75
,
0
,
,
See- test circuit
* '" 90% CONFI DENCE
[
Turn-off time
toff 8
eU 5) £
G 1368
s •• test circuit
0-'
· o
,
*MAX.
TYR
*
-- -
I
'" 90'1. CONFIDENCE
C-
0-'
[
25 50
75
252

SWITCHING TIMES
Test circuit (fall, storage and turn-off time)
1
+32V
L5nF
TO SCOPE
(chann

APPLICATION INFORMATION
BU 406 - application circuit for 17" to 24" - 110° - 28 mm neck picture tubes
+32V
;:r----~I
II~
r------",I
II
EH?
220
n
33nF
AUXILIARY
TURNS
180----+11:::.
T2(5th harmonic)
5-2295/2
*Nl=125 turns ~ O.3nm; N2=25 turns ~ O.6nm; GAP=O.12rrm i CORE=OOUBLE E 19x5xB mm;FERRITE JEt TYPE
254

EPITAXIAL PLANAR NPN
HORIZONTAL TV DEFLECTORS
The BU 4060, BU 4070 and BU 4080 are silicon planar epitaxial NPN transistors with
integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, high
voltage devices for use in horizontal deflection output stages of MTV receivers with
110° CRT.
The BU 4060 and BU 4080 are primarily intended for large screen, while the BU 4070 is
for medium and small screens.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEV Collector-emitter voltage (VBE = -1.5V)
V EBO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current (repetitive)
ICM Collector peak current (t = 10 ms)
IB Base current
P tot Total power dissipation at Tease";; 25°C
T stg Storage temperature
T j Junction temperature
BU406D BU407D BU408D
400V 330V 400V
400V 330V 400V
6V
7A
10A
15A
4A
60W
-65 to 150°C
150 °C
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
10.4~
255
6/77

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.08 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEv Collector cutoff for BU406D and BU408D
current (VSE = -1.SV) VCE = 400 V 15 rnA
for BU407D
VCE = 330 V 15 rnA
IEsO Emitter cutoff V EB = 6 V 400 rnA
current (lc = 0)
VCE (sat)* Collector-emitter for BU406D and BU407D
saturation voltage Ic =5A Is = 0.65A 1 V
for BU408D
Ic = 6A Is = 1.2 A 1 V
VSE (sat)* Base-emitter
for BU406D and BU407D
saturation voltage Ic = SA Is = 0.65A 1.3 V
for BU408D
Ic = 6A Is = 1.2 A 1.5 V
fT Transition frequency Ic = O.S A VCE = 10 V 10 MHz
toll Turn-off time for BU406D and BU407D
Ic = SA Is end = 0.6SA 0.75 iJ.s
for BU408D
Ic =6A Is end = 1.2A 0.5 iJ.s
ISlb Second breakdown VCE = 40 V t = 10 ms 4 A
collector current
VF Diode forward voltage IF = 5A 1.S V
* Pulsed: pulse duration = 300 iJ.s, duty cyple 1.S%
256

DC current gain
Collector-emitter saturation voltage
VeE = IV
G-191811
T
VCE(sa\j
(mV) ,
G 2770
20
hFE =10
10
-
.....
" .....
, ,
10' 10' Ie(mA)
10'
lCase·125'C
= 25'C ,""-
/' ~
~
I-i'"
, ,
VI
, .
IC (mA)
Base-emitter saturation voltage
Forward voltage
VSE(sat )
(mV)
hFE =10
G 1921ft
G 2656
1600
1.5
1200
800
-
.....
-
400
Q5
10' 10'
, ,
'C(mA)
o
, B
IC (A)
257

SWITCHING TIMES
Test circuit (fall, storage and turn-off time)
SYNC.
INPUT
LF
+32V
1.5nF
150
fi
TO SCOPE
(channE'1 nOll
1
kfi
100
kfi
8.2
kfi
15nF
L 1 Horizontal hold COil:::~: 1~~~~~~~:~!~ 00~~; ::~·.~~i t ~~~ ~ ~:~2 ~~
L2 Horizontal yoke:200 flH
T1
Core= siferri t B 62120 25>'1,)(2
Or'iver transformer: Pins 1-2=125 turns !Ii 0.2 mn;
Pins 3-4=25 lurnsl!l O.4rrrn; Gap =O.12mm; C.ore",3E3doubleE 19x15)(5
T2 EHT transformer manufacturer ARea type 249.065/035
R = 270.n for BU406D and SU 4070
R = lao n for BU 4080
5-2291/1
Waveforms
Fall and storage time
Turn-off time
-----c.----Q
Turn-off time is the time for the collector current Ie
to decrease to 100mA after the collector to emitter
voltage VeE has risen 3V into its flyback excursion
5-0857
258

APPLICATION INFORMATION
Two examples are given of the BU 4060 and BU 4070 in conventional MTV horizontal
deflection circuits,
BU 4060 - application circuit for 17" to 24" - 110° - 28 mm neck picture tubes
+32V
::b·IEH~
II
,-------4
II
II
AUXILIARY
TURNS
T2(Sth harmonic)
5-1645/2
*Nl=125 turns ¢ O.3mn; N2=:25 turns ~ O.6rrm; GAP= 0.12 nm ; CORE=DOUBLE E 19x5xBmm;FERRITE 3El TYPE
BU 4070 - application circuit for 12" to 17" - 110° - 20 mm neck picture tubes
(driver supply voltage = 10,8 V)
.1O.8V
::t*-'.I EH~
,------"""~
"
AUXILIARY
TURNS
'e
+lO.BV
*Nl= 90 (urns ¢ O.3rrm; N2=30 turns ¢ O.6rrm; GAP=0.12rrm; CORE=DOUBLE E 19x5x8 mm;FERRITE JElTYPE
259

APPLICATION INFORMATION (continued)
BU 407D - application circuit for 12" to 17" - 110' - 20 mm neck picture tubes
(driver supply voltage = 25 V)
+Z5V
lr----~ EH~
II~
cc------ll ĪI
II
270
11
22 nF
AUXiliARY
TURNS
'8
5-2296/1
't10.BV
*Nl=125 turns ~ O.3rrrn; N2=25 turns ~ O.61TTT\; GAP= 0.12 nm i CORE=DOUBLE E 19x5xS mm;FERRITE JE1TVPE
260

EPITAXIAL PLANAR N PN
HORIZONTAL TV DEFLECTORS
The BU 407 and BU 407H are silicon epitaxial planar NPN transistors in Jedec TO-220
plastic package.
They are fast switching, high voltage devices for use in horizontal deflection output
stages of medium and small screens MTV receivers with 110° CRT.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEV
Collector-emitter voltage (VBE = -1.5V)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Collector peak current (t = 10 ms)
Base current
Total power dissipation at Tease::::; 25°C
Collector-base voltage (IE = 0)
VCEO
V EBO
Ic
ICM
ICM
IB
P tot
T stg Storage temperature
T j Junction temperature
330 V
330 V
150 V
6 V
7 A
10 A
15 A
4 A
60 W
-65 to 150°C
150 °C
INTERNAL SCHEMATIC DlAGR~4:
MECHANICAL DATA
Dimensions in mm
COtlectorCQnnectedto tab.
261
6/77

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
2.0S °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICES Collector cutoff VeE = 330V
current (VBE = 0) VeE = 200V
VeE = 200V Tease = 150°C
lEBO Emitter cutoff VEB = 6 V
current (Ie = 0)
VeE (sat)* Collector-emitter for BU407
saturation voltage Ie =5A IB = 0.5A
for BU407H
Ie =5A IB = O.SA
VBE (sat)* Base-emitter
for BU407
saturation voltage Ie =5A IB = 0.5A
for BU407H
Ie = 5A IB = O.SA
fT Transition frequency Ie = 0.5 A VeE = 10 V
tOil ** Turn-off time for BU407
Ie =5A IB end = 0.5A
for BU407H
Ie =5A IB end = O.SA
ISlb Second breakdown VeE = 40 V t = 10ms
collector current
5 mA
100 [LA
1 mA
1 mA
1 • V
1 V
1.2 V
1.2 V
10 MHz
0.75 [Ls
0.4 [Ls
4 A
* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
** See test circuit
262

DC current gain
Collector-emitter saturation voltage
,
Go 2653
VCE(sat)
(V) ,
G 2651
4
2
10
8
,
4
2
VCE =5V
F- r--.. l'-
~I'-
10 ,
,
4
1----1-
hFE=IO
Tease =125'Cy
.-? 25'C
...- ~
10- 1
2
i
, , , ,
10-' 1 IC (A)
VBE(sa t)
(V )
Base-emitter saturation voltage
I
G 2652
ICES
,
(nA) 4
Collector cutoff current
G 2763
1.5
0.5
o
Tease - 25°C
--i--
125"C
, 8
hFE =10
-I--"'
~
.,-
, 8
IC (A)
10'
10'
10'
10
2
,
,
,
,
,
,
VCE =2 50V
V
17
V
25 50 75
..... V
263

Storage time
Fall time
10-
G 1367 G 1366
, ,
)
, ·
See test circuit
, ,
·
B
*MAX.
TYP.
*MIN. I-
, ,
, ,
TYP.
'MIN.
B
,
,
,
·
*MAX.
·, ·,
,
,
*"'90"!.CONF'TT
,
25 50 75 25 50 75
See test circuit
• '" 90"!. CONFIDENCE
Turn-off time
G 1368
·
B
,
See test circuit
,
·
B
*MAX.
,
* TYP.
, -I-
,
I
O·
B
·,
+=
,
I
!
"\. 90 °/0 CONFIDENCE
O· , 25 50 75
264

SWITCHING TIMES
Test circuit (fall, storage and turn-off time)
"L
TO SCOPE
(chann('i n"1l
I 100 10
kll kll kll
r
15nF ,,,
lOa
kll
8.2 680 33 470
kll n n II
:,uH
O.22,uF
1
5-2291/2
l1 Horizontal hold COil:~\~:~~;:~;~~~~~:¢OO~2~; ::~.~~:~~~nx~~·.~z~~ Core:siterrit 66212025)(4)(2
L2 Horizontal yoke=200,uH
T1 Driver transformer: Pins 1-2"'125 turns ~ 0.2 nm;
Pins 3-4=25 turns~O.4mn; Gap =O.12rrm; Core=3E3doubleE19l'.15x5
T2 EHT transfer"mer manufacturer ARea type 249.065/035
R = 330 II for BU4Q7
R = 220 11 for BU407 H
IZOO
Waveforms
Fall and storage time
Turn-off time
...... --.---0
Turn-off time is the time for the collector current Ie
to decrease to 100mA after the collector to emitter
voltage VeE has risen 3V into its flyback excursion
5-0857
265

APPLICATION INFORMATION
Two examples are given of the BU407 in conventional MTV horizontal deflection circuits
BU 407 - application circuit for 12" to 17" - 110° - 20 mm neck picture tubes
(driver supply voltage = 10.8V)
+ to.8 v
r-----lI
II
II
116·IEH~
II
150
AUXILIARY
TURNS
'e
5-2292/2
+1O.8V
*Nl=125 turns ¢ O.3mn; N2=30 turns ~ O.6nm; GAP=O.12nm; CORE"'DOUBLE E 19x5xB mm;FERRITE 3Et TYPE
BU 407 - application circuit for 12" to 17" - 110° - 20 mm neck picture tubes
(driver supply voltage = 25 V)
+25V
r-----lI
II
II
116-.I EH?
II
22nF
AUXILIARY
TURNS
'e
S-0852/4
....'O.Bv
*Nl=125 turns ¢ O.3rrm; N2=25 turns ~ O,6rrm; GAP= O.12nm i CORE=DOUBLE E 19)(5x8 mm;FERRITE 3Et TYPE
266

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
~\" :,:,~';, ':." ":'~\.
267
10/82

THERMAL DATA
Rth j-case Thermal resistance iunction--case max. 1.1 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BU426 VCE = 800V 1 mA
current (V SE = 0) for BU426A VCE = 900V 1 mA
T case = 125°C
for BU426 VCE = 800V 2 mA
for BU426A VCE = 900V 2 mA
IESO Emitter cutoff VES = 10V 10 mA
current (I c = 0)
VCEO(SUS) Collector-emitter for BU426 Ic,,= 100mA 375 V
sustaining voltage for BU426A Ic ='100mA 400 V
(I S = 0)
V CE(sat) * Collector--emitter Ic = 2.5A Is = 0.5A 1.5 V
saturation voltage Ic =4A Is = 1.25A 3 V
VSE(sat) * Base-emitter Ic = 2.5A Is = 0.5A 1.4 V
saturation voltage Ic =4A Is = 1.25A 1.6 V
hFE * DC current gain Ic = 0.6A VCE = 5V 30 60 V
ton Turn-on time Ic = 2.5A 0.25 0.5 JlS
lSI = 0.5A Vcc = 250V
268

ELECTRICAL CHARACTERISTIC (Continued)
J
Parameter
Test conditions
Min. Typ. Max. Unit
ts
tj
Storage time
Fall time
Ie = 2.5A IB1 = 0.5A
IB2 = -lA Vee = 250V
2.5 3.5 J.lS
0.2 0.5 J.lS
tj Fall time Ie = 2.5A IB1 = 0.5A
IB2 = -lA Vee = 250V
T case = 100°C
0.75 J.lS
* Pulsed: pulse duration = 300 J1S duty cycle = 1.5%.
Safe operating ?reas
G -4792
IC MAX PULSED
PULSE OPERA TlON *
I
10 8
10-1
8
6
IC MAX CONT.!
10,...s
100,...s
1ms
5ms
.C. OPERATION
*FOR SINGLE NON
REPETITIV PULSE
.... ./"\
r-
V \ \
f-
,
\ ,
~ l\
10-2
1
I
[I
6 B
10
BU426
BU 426 A ~
4 6 B
VCE(V)
= Area of permissible operation driving turn-on provided RBE = 100n and tp ~ 0.6 p.s.
II = Area of permissible operation with V BE ~ 0; tp ~ 2 J1S.
269

EPITAXIAL PLANAR NPN
HIGH VOLTAGE FAST DARLINGTON
The BU801 is a silicon epitaxial planar NPN Darlington transistor with integrated baseemitter
speed-up diode, mounted in Jedec TO-126 plastic package. It is particularly suitable
as output stage in medium power and driver stage in high power, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO
Ic, IE
IB
P tot
Tstg
T j
Collector-base voltage (IE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (Ic = 0)
Collector and emitter currents
Base cu rrent
Total power dissipation at Tease .;;; 25°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC DIAGRAM
C
,-------1
I
I
B I I
I [
I [
I
I
L ______ ~
5-5290
600
400
7
3
40
-65 to 150
150
v
V
V
A
A
W
°C
°C
MECHANICAL DATA
Dimensions in mm
3/82 270

THERMAL DATA
Rth j-case Thermal resistance junction-case max 3.12 °C/W
ELECTRICAL CHARACTERISTICS (Tcase= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEs Collector-cutoff VCE = 600V 200 JlA
current (V SE= 0)
IcEO Collector-cutoff VCE = 400V 1 rnA
current (ls= 0)
IESO * Emitter cutoff current v.ES = 7V 100 rnA
(lc= 0)
VCEO(SUS)* Collector-emitter Ic= 10 rnA 400 V
sustaining voltage
VCE (sat)* Collector-emitter Ic= 200 rnA Is= 2 rnA 1.0 1.5 V
saturation voltage Ic= lA Is= 20 rnA 1.2 2.0 V
Ic'=' 2A Is= 200 rnA 1.8 3.0 V
VSE(sat) * Base-emitter Ic= 200 rnA Is= 2 rnA 2 V
saturation voltage Ic= lA Is= 20 rnA 2.5 V
Ic= 2A Is= 200 rnA 3 V
, 'FE * 09 current gain Ic= 200 rnA VCE = 3V 100 -
l VF* Diode forward voltage IF= lA 4 V
RESISTIVE SWITCHING TIMES
ton Turn-on time Vcc= 250V 0.17 0.8 Jls
Ic= 200 rnA
1. Storage time ISl= 2 rnA 0.37 1 Jls
VSEOff = -5V
t f Fall time 0.13 0.5 Jls
£71

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Vcc= 2S0V 0.18 0.8 p.s
Ic= 1A
ts Storage time IS1= 20 mA 0.38 1 p.s
VSEoff= -SV
t f Fall time 0.09 O.S p.s
INDUCTIVE SWITCHING TIMES
ts Storage time VClamp= 2S0V 0.3S 1 p.s
t f Fall time
Ic= 200 rnA IS1= 2 rnA
VSEoff= -SV 0.09 0.4 p.s
.
ts Storage time VClamp= 2S0V O.S 1 p.s
t f Fall time
Ic= 1A IS1= 20 rnA
VSEoff= -SV 0.06 0.4 p.s
* Pulsed: Pulse duration = 300 JJ.S. duty cycle = 1.S%
Safe operating areas
Ie 8
(A) 6
L Il.ll~
PULSE OPERATION* 1I111
4 Ie MAX
---"--
'\ , 10}JS
2
1\
1\
~ Ims
F==F··
81--
6 ~I OPERAfliON
\
4 TI'lTIT \,
lTIJTTTIf .
2 ~FOR SINGLE NON
I
REPETITIVE PULSE
~
10- 1
8
6
\
4
\
1
2
10- 2
100}JS
~
2 4 6 8 2 4 6 8 2 8 2 4
G_4712
6 8
I = Area of permissible operation during turn-on with tp ~ 1 p.s.
10
272

DC current gain
Collector-emitter saturation voltage
j
I
8
6
G -4711
VeEIsat)
IV)
G 4713
po'
L_
~-
10'
10
8
, VCE :1.5V I\.VCE:5V
\,
hF :1 0
I
I
/
I
I
hFPI
10-2
8 • 68
• 68
10-' Ic IA)
o
, 6. , 6.
10- 2 10-' I
, 6 •
Ic IA)
VSEIsat )
Base-emitter saturation voltage
hFplO
~
hFplO
./
"/
G -10714
VCE(sat
IV)
)
Collector-emitter saturation voltage
./
/" ./
V
r-....
I"-.
V
~ .......
r
\
G 4715
Ie:
IOmA
100m A
200mA
SOOmA
IA
I.SA
o
10-' 10-1 IC IA)
o
, 6. , 6.
10- 1 10
, 6 •
IBlmA)
273

10-'
Clamped reverse bias safe operating
-.~~t~gl [i~~--~ 8sf r-
f------+--- - ----I-- --
1------+--+-- -1--
- --.. ----- ----
6 8
VCE(c1amp)(V)
I
(,.,5) •
10-'
4
Saturated switching characteristics
(resistive load) G 47.7
Is
-/
...... /
~ ::::::-.. I--. Ion
""
1/
VCC=2S0V
:
, hFE=IOO
VSE=-SV
Tc =2S'C
10- 2
i
10 'C (A)
L
I •
(,.,1) •
Saturated switching characteristics
(inductive load) G 4,,8
-
Derating curves
G
-40719
,1-0. I. (VlE-0)
• I. (V E=-SV)
""
10-'
,• 1,(VSp-SV)
I
, ---. 1,(VSpO)
~lamp=2S V
, hFE= 100 -
- I I
Tc=2S'C
IC (A)
o.S
~
"r-.,
I' O{so _ (/At,
~
~/", }'~O
"'I'. ..
/~'"
50 100
~"-: r-.,
i«~o ....
....
"
274

EPITAXIAL PLANAR NPN
FAST SWITCHING DARLINGTON TRANSISTORS
The BU 806 and BU 807 are silicon epitaxial planar N PN power Darlington transistors
with integrated base-emitter speed-up diode, mounted in Jedec TO-220 plastic package.
They are high voltage, high current devices for fast switching applications. In
particular they can be used in horizontal output stages of 110° CRT video displays.
The BU 806 is primarily intended for large screeen, while the BU 807 is for medium
and small screens.
ABSOLUTE MAXIMUM RATINGS
BU806
BUB07
Chllector-base voltage (I E = 0)
Chllector-emitter voltage (V 8E=-6V)
Chllector-emitter voltage (18=0)
Emitter-base voltage (I c=O)
Chllector current
Chllector peak current
Damper diode peak forward current
Base current
Total power dissipation at T case ~25°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC DIAGRAM ,------------,
MECHANICAL DATA
I
I
I
I
: '01 1
I
I
I
I
I
I
I
I
I
I
L ____________ ..J
400V 330V
400V 330V
200V 150V
6V
8A
15A
10A
2A
60W
-65 to 1500C
150°C'
Dimensions in mm
275
5/80

THERMAL DATA
F\h j-case
F\h j-case
Thermal resistance junction-case
Thermal resistance junction-ambient
max 2.08 °C/W
max ?O ac/W
ELECTRICAL CHARACTERISTICS(T case=25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max.
Unit
ICES Collector cutoff for BU80? V cE=330V
current (V SE=O) for BU806 V CE=400V
IcEV Collector cutoff for BU807 V cE=330V
current (VsE=-6V) for BU806 V CE=400V
IESO Emitter cutoff V Es=6V
current (I C = 0)
100 IlA
100 IlA
100 IlA
100 IlA
3 mA
V CEO (sus) '" Collector -em itter
sustaining voltage
(ls=O)
Ic =100mA
for BU807
for BU806
150 V
200 V
VCE (sat) '" Collector-emitter Ic =5A Is =50mA
saturation voltage
VSE (sat) '" Base-emitter Ic =5A Is =50mA
saturation voltage
V '" F Damper diode IF =4A
forward voltage
toft "'''' Turn-off time Ic =5A I S1 =50mA
ton Turn-on time RESISTIVE LOAD
ts Storage time Ic =5A I S1 =50mA
I B2 =-500mA V cc=1 OOV
1.5 V
2.4 V
2 V
0.4 1 IlS
0.35 /.IS
0.55 IlS
t f
Fall time
0.2 IlS
'" Pulsed: pulse duration = 300llS , duty cycle = 1,5%
"'''' See test circuit
276

I
Safe operating areas
G -32411
~:~~~+~-E~t-rH~~~~--~~~~II~-~'-~~~!I~~~!I
: ;~t~~ED) * PUl.SE P RATIO
10 IC MA C NTN
0,.. ,
:,~=+,. Tljt 1~
+ tt
~~~~~~+Hffi~~~~~~~
2 * FOR SINGLE NON d~~
1 , II'P1"TITil: PU
:= ,·if!!
2-- j.').
10': ••• nlll1l
~~~+~-'-~~+m~4-iU80J11-rH~
BU8?1~,
1~'L-~L'~6~'~~~'~6~'~~~'~6~'~~~'~6~'
10" 10 10'
DC current gain
2
-".
10
VCE = 5V ".
// 1-1"-
~V
G 3249
6 •
IC(A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat),
(V)
hFE =100
G JlSO
VCE(sat )
(V)
G 3252
I I t
IC I I I J i
I
I
OJA i , 0.3 1 2 4 5 6
, ,
,
,
/
h", =
f-----'
I
, I I
I \ \
i ' \. ~
f \..
........... ~
4 • , 4 •• 4 ••
IC (A)
o
I\.. i I !
I ' [,
I
I II
6 8 , 8
10 IB(mA)
277

VBE(oat),
(V)
Base-emitter saturation voltage
f--
G 3251
Damper diode
,f---
6
G -, 253
I-
hFE =10
_d::::
100
2
-V V
, 6'
, 6'
'e (A)
'e (A)
Saturated switching characteristics
(resistive load)
I
("0)
8
VeE =fOOV
6
hFE =100
j'R,=-o.1 'R'
4
G 3254
t
(1'5) 8
6
Saturated switching characteristics
(inductive load) G 4247
'S(on)
SOmA f-
f---
VBE(off) = 4V r---
Vctamp = ZOOV f-
L = 500 I'H f-
2
8
6~
4
2
0
I~ ~ ., j...--....
If
J-.--......
1"--.
.." .....
..,; D
•
6 f---
,
2
r--.. ~ at Teas€' =100'C V ~
L..-l--
toffat TeasE' -25°C
1\ 1....- V
V
I"-
~
1
8
'e (A)
'C(A)
278

1
HORIZONTAL DEFLECTION TURN-OFF TI ME
Test circuit
68nF
820kA
Td
1.2kfl
3.3kfl
in:?-
:U~~;~
4
Ll:Horizontat yokIl'1I200/JH
lrlc EHT Transformltr SAREAtype 900914 Of equivalll'nt
11= Horizontal osc:lllator linnf I.C. TDAt180
Turn-off time waveform
-~-r---O
Turn-off time is the time for the collector current Ie
to decrease to 100mA after the collector to emitter
voltage VeE has risen 3V into its flyback excursion
5-0857
279

APPLICATION INFORMATION
Horizontal deflection circuit using the darlington BU 806 directly driven by the TDA
1180 (B & W TV set: large screen solution)
LI
Ll = L,,,,,ari!y ,,,dut!anc"RlJII',E' ~o
Unearity inductance 19+391lH
Horizontal deflection circuit using the darlington BU 807 directly driven by the TDA
1180 (B & W TV set: small screen solution).
Ll ~
Lin .. anty inductanceRL46!NE:LCO
LI
Unearity inductance 37+671lH
280

EPITAXIAL PLANAR NPN
Ii
I
MEDIUM POWER FAST SWITCHING
«:~:J,;

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 1.66 °C!W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
ICES
ICEO
lEBO *
Parameter Test conditions Min. Typ. Max. Unit
Collector cutoff
current (V BE = 0)
Collector cutoff
current (I B = 0)
Emitter cutoff
current (lc = 0)
VCE = 600V 200 fJA
VCE =400V 1 rnA
VEB = 5V
150 rnA
V CEO(su~ Colle~t~r-emitter Ic = 100mA 400 V
sustaining voltage
VCE(sat) * Collector-emitter le=2A IB = 20mA 2 V
saturation voltage Ie =4A IB = 200mA 2.5 V
Ie =7A IB = 0.7A 3 V
V BE(sat) * Base-er:nitter "Ic =2A IB = 20mA 2.2 V
saturation voltage le=4A IB = 200mA 3 V
VF * Diode forward voltage IF =7A 3 V
RESISTIVE SWITCHING TIMES
ton Turn-on time 0.6 fJs
Vce = 250V
ts Storage time ~ = 2A I B1 = 20mA 1.5 fJS
BE(off) = -5V
t f Fall time
0.5 fJS
INDUCTIVE SWITCHING TIMES
ts Storage time 1.5 fJS
t f Fall time Vclam" = 250V
Ie = A IB1 = 0.7A
0.4 fJS
ts Storage time VBE(off) = -5V 1.5 fJS
tf Fall time 0.7 fJS
* Pulsed: pulse duration = 300 fJS, duty cycle = 1.5%.
282

Safe operating areas
DC current gain
10
" ~C MAX CONT
8
DC OPERATION---+-<
~R SINGLE Nail
-1 REPETITIVE PULSE
10
1\ \1
4--'
-1
10
,
I 111111 I
8
• 10 10 2 2
-1
10
4 5 8 -1
10 IC (A)
VCE( sat)
(V)
Collector-emitter saturation voltage
i
0.5A
\
1A I
\
II
2A
-"-
I II
4A I I
\
'I
I,
......
G i, B7 7
II I
\ Ic~7AI
\ I I,
I
!
- I
VCE(sat
(V)
Collector-emitter saturation voltage
)
-----' -"
I
hFE ~ 1~gt
10
",,'"
"''' '" "-
f
/,
"'" ~
G 4879
10
1
10
-1
10
Ie (A)
283

VBE{sat I
(V I
Base-emitter saturation voltage
=-
-,
10
I
I
Il r I
I I
I
T
11
i
I
i
I
1
i I I
hFE ~gt::t-tl
-,
10
100N'f-'
I ~
.""'~
I
"'" x::
l~
y
I
I'
,
1
II
II
,
I
i
G "8 SO
ill,
!
II
• I I,
I
~
I
I
1\
I
IC (AI
I C
(A)
-,
10
Clampled reverse bias safe operating
areas
-4
--
!VSE = 5V
I-----L--" RBE ~i-7 Il
e--r-FmH
10
•
F=t
10
, I 'I
, i
II
,
--
I
! (
i
\
, .
VCE(elamp)(V)
Saturated switching
(resistive load)
-,
10
characteristics
Saturated
t
)§ __ c __
(fS
r:::==-
c=-+e----
-
f----
:f--
4
......
, ->c
-,
10
.
I
6
,
1
-,
10
-,
10
"-
,
switching characteristics
++t+
I
i I
!
G - i.S 88
VCE(c1amp) =250V
IhFE - 100 '
VBE=-5V
Te =25'C
i"-
-,-
I
--==1= ts -
tf II
, .
IC (A)
284

MULTIEPITAXIAL PLANAR NPN
HIGH VOLTAGE POWER DARLINGTON
The BU 910, BU 911 and BU 912 are high voltage, silicon NPN transistors in monolithic
Darlington configuration in Jedec TO-220 plastic package, designed for applications
such as electronic ignition, DC and AC motor controls, solenoid drivers, etc.
ABSOLUTE MAXIMUM RATINGS
BU910 BU911
BU912
Collector-emitter voltage (V BE= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Base current
Total power dissipation atT case 625°C
Storage temperature
Junction temperature
400V 450V 500V
350V 400V 450V
5V
6A
10A
1A
60W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGRAM
-----------
c
--1
I
I
I
I
I
MECHANICAL DATA
Dimensions in mm
Gollectorconnected to tab.
T0-220
285
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 2.08 °C/W
ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BU910 V cr400V 1 mA
current (V BE= 0) for BU911 V cr4SOV 1 mA
for BU912 V CE=SOOV 1 mA
T case= 12SoC
for BU910 V cr400V S mA
for BU911 V CE=4S0V S mA
for BU912 V crSOOV S mA
ICEO Collector cutoff for BU910 V cr3SOV 1 mA
current (I B = 0) for BU911 V cr400V 1 mA
for BU912 V cr4SOV 1 mA
lEBO Emitter cutoff V EB=SV S mA
current (I c =0)
V CEO (sustColiector-emitter I C =100 mA
sustaining voltage for BU91 0 3S0 V
(I B=O) for BU911 400 V
for BU912 4S0 V
VCE (sat) ,..
V BE (sat) ,..
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
for BU91 0 and BU911
I C =2.SA I B =SOmA
for BU912
Ic =2A I B =SOmA
All types
Ic =4A I B =200mA
for BU91 0 and BU911
I c =2.SA I B =SOmA
for BU912
Ic =2A I B =SOmA
All types
Ic =4A I B =200mA
1.8 V
1.8 V
1.8 V
2.2 V
2.2 V
2.S V
VF Diode forward voltage IF =4A 2.S V
,.. Pulsed: pulse duration = 300 J.IS, duty cycle = 1.S%
286

Safe operating areas
G-385t
10
B
I C MAX PULSED
ICMAX CaNT.
I
~- Dcl olJLTioN ..
I I III
"FOR SINGLE NON
1 REPETITIVE PULSE .
10
,
7
I
.....
I
H
6 B
10
PULSE OPERATION •.,
I"-
i
: I
lOlls
OOfJs
0,5ms
I-Ims
f'.... \ IOms
/~ l\-\ : i I;
i
1'1.
1\ \
\
I-...
~8m f-
BU9~2
6 8 ..., 14 6 8
10' l>C .~£ 103
V CE (V)
Derating curves
Thermal transient response
G 3801
I--t- . I-- l-t-- . - -- -.
0.5
~
I":
" f' ..... 18/ 6
--
l/~
~ I}'~D
~«>
~'a.I1'--.
'"
~.
~
o 50 100
~(1.
~ ~c_
t-t-
I ,.....
287

DC current gain
Collector-emitter saturation voltage
•
6
'"
, 1/
125'C V ...
/'
-
./ ~ "
'cr V
I
1/4O'C
!
...... ~
~~
G 3853
veE (sat)
(V)
I-~
I
IC =1A
2A
- 3A
loA
G 3854
I- I-- I- 1-
r717
~/ I/'IL /1- --- --- -
l-
10.
'i;r2V !
I
6 ,
Ie (A)
Ff
f-+
50 ICC ISO, Ie (rnA)
veE(sat
(V)
1.5
0..5
0.
Collector-emitter saturation voltage
)1-----1=-- ----
hFE=50
~=-- [~-.
G 385 5
--- I-
-
I-- ,-\--
--\---i- f- -
r-------f --
+-
--j-
1----
1-------1---
~
------ W!!I'
+--~
1- --
:::;; ~ ~ -f \--
,--- I--\--
::.:.J.-oo" J..o-"_
::..:::::;+p +----+--\- L-;-
-
~
t-r-- --
I 115'C
:-~~i~ 1- 1--
li25'C
FF
-I
f--:-1-
.-+-1=
8 10
Ie (A)
Base-Emitter saturation voltage
G-Jass
VBE(sat) I-------l---+--'--+--+-+-+--e-I
(V)
1.5
0.5
0.
8
Ie (A)
288

~.
I·······'
I
:1
I '
".
'
t H
()JS) G
1-----
+---
10
1
Saturated switching characteristics
hFE = 50
Vee =250V
VBE(off)= -5V
5f=--
'r-------
1
G 3851
If --
Ie
(A) 8
6
2.
Clamped reverse bias
safe operating areas
-
-~
Ion
_ f--P-........ Is
BU910-
BU911
BU912 _
I----
~
G 3858
10
l, 6 8 1
VeE(clamp(~r
Clamped ES/b test circuit
40V
500 )JH
TEST CONDITIONS:
5V> l-vsB I >ov
1c/ I S=50
t P = adjusted for
nominal Ie
RBS = 1 n
289

MULTIEPITAXIAL PLANAR NPN
HIGH VOLTAGE POWER DARLINGTON
The BU920P, BU921P, BU922P are high voltage high current sir
monolithic Darlington configuration in SOT -93 plastic pack
automotive ignition applications and invert circuits for motor c
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V BE = .
V CEO Collector-emitter voltage (I B .
V EBO Emitter-base voltage (Ic -;;.
Ic Collector current
ICM Collector peak curren
IB Base current
P tot Total power d·
T st9 Storage te
T j Junctio
BU921P
450V
400V
5V
lOA
l5A
5A
105W
-65 to 150°C
150°C
BU922P
500V
450V
INTERNAL
MECHANICAL DATA
Dimensions in mm
10/82 290

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.2 °C/W
I
J\
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BU920P VCE = 400V 1 mA
current (V BE = 0) for BU921P VCE = 450V 1 mA
for BU922P VcE =500V 1 mA
Tease = 150°C
for BU920P VCE = 400V 5 mA
for BU921P VCE = 450V 5 mA
for BU922P VCE = 500V 5 mA
ICEO Collector cutoff for BU920P VCE = 350V 1 mA
current (lc = 0) for BU921P VcE =400V 1 mA
for BU922P VcE =450V 1 mA
lEBO Emitter cutoff V EB = 5V 20 mA
current (I C = 0)
V CEo(susi Collector-emitter Ic = 100mA for BU920P 350 V
sustaining voltage for BU921P 400 V
(lB = 0) for BU922P 450 V
291

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
VeE(Sal) * Collector-emitter Ie = 5A 18 = 50mA
saturation voltage Ie = 7A 18 = 140mA
V8E (sal) * Base-emitter Ie = 5A 18 = SOmA
satu ration vo Itage Ie = 7A 18 = 140mA
VF * Diode forward IF = 7A
voltage
1.8 V
1.8 V
2.2 V
2.5 V
2.5 V
* Pulsed: pulse duration = 300 fJ.S, duty cycle = 1.5%.
Safe operati ng areas
I C ~
(A) 4
10 B
10-1
8
6
I l
IC MAX PULSED
II
PULSE
"
IC MAX CONT.
,
1L~S-~
100~s-1/
1ms
5ms
D.C. OPERATION
*FOR SINGLE NON
REPETITIVE P LSE
OPERATION
""
y
.A. ,
~ 1\
\ \
G-4814
10-2
l
BU 920P - r-
BU921P
BU 922P
4 6 8 4 6 B 4 6 B
10 102
292

MULTIEPITAXIAL PLANAR NPN
t l
HIGH VOLTAGE POWER DARLINGTON
The BU 930, BU 931 and BU 932 are high voltage, high current silicon NPN transistor
in monolithic Darlington configuration in Jedec TO-3 metal case specially intended
for automative ignition applications and inverter circuits for motor controls.
I
!
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V BE= 0)
V CEO Collector-emitter voltage (I B= 0)
V E80 Emitter-base voltage (I c=O)
Ic Collector current
ICM Collector peak current
18 Base current
P tot Total power dissipation at T case :::25°C
T stg Storage temperature
T j Junction temperature
BU930 BU931 BU932
400V 450V 500V
350V 400V 450V
5V
15A
20A
1A
150W
-65 to 175°C
175°C
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
c
,----- -- --)1- ---:
'
'~\~I
: son +_~ i
8~~,!
------------0---
E
Dimensions in mm
Collector connected to case
10,9
TO-3
293
10/82

THERMAL DATA
Rth j-case Thermal resistance junction-case max °C/W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BU930 V CE=400V 1 mA
current (V 8E=0) for BU931 V CE=450V 1 mA
for BU932 V CE=500V 1 mA
T case=150°C
for BU930 V CE=400V 5 mA
for BU931 V CE=450V 5 mA
for BU932 V CE=500V 5 mA
IcEO Collector cutoff for BU930 V CE=350V 1 mA
current (I 8=0) for BU931 V CE=400V 1 mA
for BU932 V CE=450V 1 mA
IE80 Emitter cutoff V Es=5V SO mA
current (I C = 0)
V CEO (sus) • Collector-emitter I C =100mA
sustaining voltage for BU930 3S0 V
for BU931 400 V
for BU932 450 V
VCE(sat) • Collector -emitter for BU930and BU931
saturation voltage I C =7A 18 =70mA 1.6 V
Ic =8A 18 =100mA 1.8 V
I C =10A 18 =250mA 1.8 V
for BU932
Ic =8A 18 =1S0mA 1.8 V
V8E(Sat) • Base-emitter for BU930 and BU931
saturation voltage Ic =8A 18 =100mA 2.2 V
I C =10A 18 =2S0mA 2.S V
for BU932
Ie =8A 18 =150mA 2.2 V
294

ELECTRICAL CHARACTERISTICS (continued)
Parameter
V * F
Diode forward IF =10A
voltage
Test conditions
Functional test for BU930
(see test circuit V CE=350V L=7mH
figg. 2 and 3) for BU931 and BU932
V CE=400V L=7mH
Min. Typ. Max. Unit
2.5 V
8 A
8 A
* Pulsed: pulse duration =300 ~s, duty cycle = 1.5%
Safe operating areas
Ie
(A)
10
8
6
, ICMAX PULSEb
2
8
f
,
1
ICMAX COt'{
DC OPERATION
:'-..
t'.
PULSE OPICRATION*
" \
1\ \
G- 3B62
10 f-ls
mfJ
1ms
Oms
10-
B
6
,
2
1
~[~&W+~5t~02~E
8
6
,
\
,,,-
2
2
, ,8
10
p -,
f--
~-.;;; I-~
i):
.. t ;,
j Vcr (V )
295

Thermal transient response
DC current gain
IT 1
G 4~5
25'C
/-40'C
1/ ~;r ~
V l/v 1\
10
7
Vr~=2V
1
10-'
I
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCEC,at )
1
CV)
G 1,649
vSE(sal )
(V)
G ~848
-'" j..:j;:'
~ j...-
I--
/125'C
/
I 25'C
1// -40'C
~
hFE=6(
l.--
~ l.--
~ c.-
V
V
... -40'C
V/ 25'C
~ 125'C
hFEo8O
o
o
10
10
296

Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat )
(V)
--- -40'C
~
hFE=80
i--':::
I
1125'C
I
II 25'C
I
G '841
10 .1C(A)
V8E(sat )
(V)
o
-- "
-
",
........
..... 1-"
I
I
"' -4O'C
// 25'C
"/125'C
hFE=60
G '('&50
10 IC CA )
VCE(sat)
(V)
Collector-emitter saturation voltage
-
G 4146
t
(1'5)
Saturated switching characteristics
5
IC·IOA·
8A
6A
4A
2A
Ie =ISA
8
•
•
VCC=I50V
"FE"4O
IBI= -IB2
~
-
~ ./
,/
)/
-.....
2
o
50 100 1!iO IBCmA)
•
IC(A)
297

Clamped reverse bias
safe operating areas
Fig. 1 -
Clamped EsAl test circuit
IC
(A)
tp ..fl
40V
500 )JH
10
TEST CONDITIONS:
5V> l-vBB I > 0
I C /1 B =40
tp =adju.sted for
nominal Ie
RBB= 1 It
10
3504450
VCE(clamp)(V)
Fig. 2 -
Functional test circuit
Fig. 3 -
Functional test waveforms
i6.6ms
11.6ms
Vz
INPUT
SIGNAL
01---......
DRIVER AND
CURRENT
LIMITING
CIRCUIT
BASE
CURRENT
COLLECTOR
CURRENT
o f----'
01-----
TES T DURATIO N : 2 sec
for BU930 Vz = 350V
for BU931 and BU932 Vz =400V
5- 3676
COLLECTOR
EMITTER
VOLTAGE
o
5-3677
298

MUlTiEPITAXIAl PLANAR NPN
AUTOMOTIVE IGNITION DARLINGTON
,';","',
",,'''1
The BU930P, BU931P and BU932P are high voltage silicon j\t~Darli~~t~~ transistors in
SOT--93 specially intended for automotive ignition appliClltion· am,j;j inverter circuits for
motor controls.
ABSOLUTE MAXIMUM RATINGS
BU931P
BU932P
V CES
V CEO
V EBO
Ic
ICM
IB
Ptot
T stg
T j
Collector-emitter voltage (V BE =
Collector--emitter voltage (I B =
Emitter-base voltage (I c = .
Collector current
Collector peak current,
Base current
Total power diss· .
Storage temp
Junction
···,'400V
350V
450V
400V
5V
15A
20A
1A
105W
-65 to 150°C
150°C
500V
450V
INTERN
I~------l
I
c
I
B 1 I
: I
I R1 R ,! Rl Typ. 175[).
L~ ___ ~ _---.J R2 Typ. 50[).
MECHANICAL DATA
Dimensions in mm
CollectO(Cllllnected to.tab.
299
10/82

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.2 °C!W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BU930P VCE = 400V 1 mA
current (V SE = 0) for BU931P VCE = 450V 1 mA
for BU932P VCE = 500V 1 mA
Tease = 150°C
for BU930P VCE = 400V 5 mA
for BU931P VCE = 450V 5 mA
for BU932P VCE = 500V 5 mA
ICED Collector cutoff for BU930P VCE = 350V 1 mA
current (I S = 0) for BU931P VCE = 400V 1 mA
for BU932P VCE = 450V 1 mA
IESO Emitter cutoff V ES = 5V 50 mA
current (I C = 0)
VCEO (sus) Collector-emitter Ic = 100mA
sustaining voltage for BU930P 350 V
for BU931P 400 V
for BU932P 450 V
VCE(sat) * Collector-emitter for BU930P and BU931P
saturation voltage Ic =7A Is = 70mA 1.6 V
Ic = SA Is = 100mA 1.S V
Ic = 10A Is = 250mA 1.S V
for BU932P
Ic = SA Is = 150mA 1.S V
VSE (sat) * Base-emitter for BU930P and BU931P
saturation voltage Ic =SA Is = 100mA 2.2 V
Ic = 10A Is = 250mA 2.5 V
for BU932P
I,c =SA Is = 150mA 2.2 V
V F * Diode forward IF = 10A 2.5 V
voltage
* Pulsed: pulse duration = 300 IlS, duty cycle = 1.5%.
300

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUR 50 is a silicon multiepitaxial planar N PN transistor in modified Jedec T0-3
metal case, intended for use in switching and linear applications in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS
V C80
V CEO
V E80
Ic
Collector-emitter voltage (I 8= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case:S25°C
Collector-base voltage ( I E = 0)
ICM
18
P tot
T stg Storage temperature
T j
Junction temperature
200 V
125 V
10 V
70 A
100 A
20 A
350 W
-65 to 200 °C
200 ac
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
,7~ 17
1. max
301
5/80

THERMAL DATA
f\h j-case Thermal resistance junction-case max 0_5 °C/W
ELECTRICAL CHARACTERISTICS(T case=25OCunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Q)lIector cutoff VcEF200V 0.2 mA
current (I E=O) V c8=200V 2 mA
T case=125OC
ICED Q)lIector cutoff V CE=125V 1 mA
current (18=0)
IE80 Emitter cutoff V E8=7V 0_2 mA
current (I C = 0)
V CEO (sus) *Collector-emitter Ic =200mA 125 V
sustaining voltage
VE80 Emitter-base IE =10mA 10 V
voltage
(lc=O)
VCE(sat) * Q)lIector-emitter Ic =35A 18 =2A 1 V
saturation voltage Ic =70A 18 =7A 0.8 1.5 V
V8E(Sat) * Base-emitter Ic =35A 18 =2A 1.8 V
saturatio!'J voltage Ic =70A 18 =7A 1.6 2 V
hFE * DC current gain Ic =5A V CE=4V 20 100 -
Ic =50A V CE=4V 15 -
Isib
Second breakdown
collector current
V cE=20V t =1s 17.5 A
fT Transition frequency Ic =1A V CE= 5V 10 16 MHz
f =1MHz
302

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ie =70A I B1 =7A 0.5 1.2 !is
(fig. 2)
Vec=60V
ts Storage time
.
(fig. 2)
Ie =70A I B1 =7A
0.82 2 !is
t f Fall time
I B2 =-7A Vec=60V
0.1 0.5 !is
(fig. 2)
Clamped Es/b V clam8=125V 70 A
Collector current L =5 O!iH
(fig. 1)
* Pulsed: pulse duration =300 IJS, duty cycle ::;2%
Safe operating areas
Derating curves
IC
(Al
10'
10
6
6
,
6
70
f~AX
'f---.CONt ,
.~
G 4195 G 3665
c+,~
, +Hf ·····~-r,
ICMAX P~LSED PULSE OPERATION-
,
10
-:~I
jJS
.......
1~~~S ~ .
1'.,.,
10ms H
: i i lili
, I
~
: ~ DC OPERATION
,
,
6
6
,
,
FOR SINGLE NON ,
REPETITIVE PULSE I i
-r ,
2 , 66 2 , 66 ~52
, 66
10 10'
0.5
~i-- - f ~_l_t .-
!
I ~~
I
i
,
I
~ t--...'%,,,J
I' t--...'7

Thermal transient response
DC current gain
f
G 3911
1I 125 ,C
60
40
~
25'C
-30'C
..........
r-
;-..... ;::r-.
I
20
I
I
I
I
I
10- 5 10-3 10- 2 10- ' «sec)
10
I
II
4 66 4 6 6
1
10
VCE ,4V
4 6 6
IC(A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat )
(V)
G 3912
VCE(sat )
(V)
hFE=XJ
G 3913
1.5
1\
1.5
0.5
lOA
1'..30A
N.
1\..SOA
T
IC ,70A
I
0.5
o
"'-
-30'C-
25'C ~
125'C-
, 8
10
,"
"
~
"-..:
"
I~
/
~
6 8
Ic(A)
304

Base-emitter saturation voltage
Saturated switching characteristics
VBE(sat )
(V)
1.5
hFE= 10 I
I--t--' .
G 3914
t
(1'5) •
,
'
"""'"
t--
G 3915
0.5
4 • 8
1
-3O·C
--+-
25·C
125·C
I
4 • 8
10
~
./
/
~
4 ••
IC (A)
, Vee GOV
6 hFE =10
Tease = 2S-c
,
........
2
,
r-.... ~
i'-
f..
, ,
~ t-.....
10
Ion_ V
If
V
,
us)
•
'.
Saturated switching characteristics
f""oo..
ts
Vee =60V
2 hFE =10
r-....
Tease =12Scrc
6
•
,
"'
.........
1/
G 3916
"
fT
(MHz)
20
Transition frequency
10 ./
7
i,..-
1'cE =5V
f=IMHz
1--.
1"
G 3899
10-1
• 6
10
• •
IC (A)
10-1
. ,
6 6
IC (AI
2
Ion
-If
305

CC80
(pF) 8
6
Collector-base capacitance
G 3917
IC
(A)
Clamped reverse bias safe
operating areas
,
5
,
G 3918
4
,
-
10'
8
10
2
d
6
,.
2
6
,
4 6 8
10
4 68
10'
........
4 6 8
VCS (V)
,
6
4C--- SEE TEST CIRCUIT OF FIG.l
11111111 III
2
11111111 III
4 68
4 68125 1 4 68
10
10' ItE(clamp)1 V)
Fig. 1 -
Clamped Esib test circuit
Fig. 2 -
Switching times test circuit
(resistive load)
TEST CONDITIONS:·
7V "I-vss I .. 2V
1c/ l s: 10
t P = adjusted for
nominal Ie
Rss=",'ll
TEST CONDITIONS:
VCC : 60 V
R _ VCC -VCE(sat)
C - IC
I NPUT PULSE
pulse width :10 I's
trJtf::: SOns
duty cycle =1%
5-3681
306

I,I
II
II~
I
I
MULTIEPITAXIAL PLANAR NPN
I, ',"
I:
I,)
~
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
~I"
The BUR 51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO
!c
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case :'025 °C
Collector -base voltage ( I E = 0)
ICM
IB
P tot
T stg Storage temperature
T j
Junction temperature
INTERNAL SCHEMATIC DIAGR:4 :
300 V
200 V
10 V
60 A
80 A
16 A
350 W
-65 to 200°C
200 °C
MECHANICAL DATA
Dimensions in mm
Collectorconllected to case,
!
I,j
307
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 0.5 °C/W
ELECTRI CAL CHARACTERISTI CS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
Icso Collector cutoff V cs=300V 0.2 mA
current (I E=O) Vcs=300V 2 mA
T case=125°C
ICEO Collector cutoff V CE=200V 1 mA
current (I s=O)
IESO Emitter cutoff V Es=7V 0.2 mA
current ( I C = 0)
V CEO (sus) "'Collector-emitter Ic =200mA 200 V
sustaining voltage
VESO
Emitter-base
voltage
(I c =0)
IE =10mA 10 V
VCE(sat) ... Collector-emitter Ic =30A Is =2A 1 V
saturation voltage Ic =50A Is =5A 0.9 1.5 V
VSE(sat) ... Base-emitter Ic =30A Is =2A 1.B V
saturation voltage Ic =50A Is =5A 1.55 2 V
hFE ... OCcurrent gain Ic =5A V CE=4V 20 100 -
Ic =50A V CE=4V 15 -
15ft,
Second breakdown
collector current
V cE=20V t =1s 17.5 A
fT Transition frequency Ic =1A V CE=5V 10 16 MHz
f =1MHz
30B

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =50A I B1 =5A 0.35 1 IlS
(fig. 2)
Vec=100V
ts Storage time 0.9 2 IlS
(fig. 2)
Ie =50A I B1 =5A
t f Fall time
I B2 =-5A Vec=100V
0.24 0.6 IlS
(fig. 2)
Oamped Esib V clamo
=200V
Q)lIector current L =5 OIlH
50 A
(fig. 1)
j
* Pulsed: pulse duration =300 IlS. duty cycle ",;;2%
IC 8
6
(A) ,
Safe operating areas
G -3902
Ptot
(W)
Derating curves
-- f--- -
G J665
10' 8
I e MAX PULSED
: Ie MAX eONT.
2
10 8
6
4
CPERATiO
2
FOR SlNGL
REPEmlVE FUSE
8
6
4
2
, 6 ,
PULSE ~TlJN'
ms
"" Oms
1\
~
\
'\
"
, 6 ,
10 10'
ill'S
4 6 ,
VCE (V)
0.5
o
I~ ~
:-....: t---.,~(
I' .......:;:It:D
.......
i'-.. r-...
~-.......Dt,s~
50 100
r-...
"':-fh, ...... ~
~~
~ f-
I I i'-..
150 Tease ('e)
309

Thermal transient response
DC current gain
hFE
G 3893
60
40
V
2S'C
12S'C
J.,.---"""
Tease :::-30"C
V VCE .4V
"-
!'--..
...........
\
~~
!
I
20
II
10
4 68 4 6 8
1
10
4 68
IC (A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat)
(V)
G 3894
VCE(sat)
(V)
'hFE·l0
G 3895
o
"'-
I
Ie
t- lOA
lOA
30A
40A
j~ SOA
17 60A t-
16 (A)
1.5
0,5
o
-30'C
2~
r~
-t--
, 68 68
10-1 1 10
"
/
"/ '/
V '/
./
V
310

Base-emitter saturation voltage
Saturated switching characteristics
VBE(sat )
(V)
hFE =10
1.5
-30'C ,
_

CCBO B
(pF)
O:>lIector-base capacitance
r-~ f-- -~+
I---
G 3900
I
1 I
I
I
r- II
I
i
I i 1'1 I, i
!
I
Ie ,
(A) 6
10
Clamped reverse bias
safe operating areas
~~~~!!~~~~!1~~~~rGl"~90~4~
'r-
10'
, I
"- ,,- J I
:ll+
,
II I I
mt-...
'
I II' i I I I i i I
,11
Iii
I
lll: Ii
B , , 6'
10 10' VCB (V)
: ~ SEE TEST CIRCUIT OF FIG_I
10-' L---L--L-LllilJL~L-Ll.LLllU~--L-L-Ll-LWJ
, 6' , 6'
10 10' VeE (V)
Fig. 1 - Clamped Esib test circuit
"OV
Fig. 2 -
Switching times test circuit
(resistive load)
TEST CONDITIONS'
7 v'" l-vBB I ~ 2V
IC/IB=IO
tp :::adju.sted for
nommal Ie
RBa ~ l/l
TEST CONDITIONS:
Vec = 100V
R _ VCC -VCE(sat)
C- IC
INPUT PULSE
pulse width =IO}Js
tr J tf::: SOns
duty cycle =1 °/0
312

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUR 52 is a silicon multiepitaxial planar N PN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO
Ic
ICM
IB
Ptot
Tst9
T j
Collector-base voltage (I E=O)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I c= 0)
O:>lIector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case::;25°C
Storage temperature
Junction temperature
350
250
V
V
10 V
60 A
80 A
16 A
350 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~~
MECHANICAL DATA
Dimensions in mm
COllector connected to case
j
!
·l\IIodifiedTO.,.3
313
5/80

THERMAL DATA
F\h j-case Thermal resistance junction-case max 0_5 °C/W
ELECTRICAL CHARACTERISTICS(T case=25OC unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff V cB=350V 0.2 mA
current (I E=O) V cB=350V 2 mA
T case=125OC
IcEO Collector cutoff V cE=250V 1 mA
current (I B=O)
~
lEBO Emitter cutoff V EB=7V 0.2 mA
current ( I C = 0)
V CEO (sus) ·Collector-emitter Ic =200mA 250 V
sustaining voltage
VEBO
Emitter-base
voltage
( Ic=O)
IE =10mA 10 V
VCE(sat) ... Collector-emitter Ic =25A IB =2A 1 V
saturation voltage Ic =40A IB =4A 0.701.5 V
VBE(Sat) ... Base-emitter Ic =25A IB =2A 1.8 V
saturation voltage Ic =40A IB =4A 1.5 2 V
hFE ... DCcurrent gain Ic =5A V CE=4V 20 100 -
Ic =40A V CE=4V 15 -
1st!>
Second breakdown
collector current
V cE=20V t =1s 17.5 A
fr Transition frequency Ic =1A V CE=5V 10 16 MHz
f =1MHz
ton Turn-on time Ic =40A I B1 =4A 0.3 1 I1S
(fig. 2)
V cc=100V
314

ELECTRICAL CHARACTERISTI CS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ts Storage time 1.2 2 J.l.S
(fig. 2)
Ie =40A 161 =4A
t f Fall time
162 ~4A Vec=100V
(fig. 2)
0.20 0.6 J.l.S
Clamped Est!> V c,am8=250V 40 A
Collector current L =5 OJ.l.H
(fig. 1)
* Pulsed: pulse duration =300 IlS, duty cycle =2%
Ie ,
(A) 2
10' a
6
2
10 a
,
Safe operating areas
leM~X ~!iJ
Ie MAX C\",'
D OPERATION
2 • FOR S/'IGlE NON
REPETITIVE P\..LSE
a
,
2
8
• , 4 • 8
PULSE OPE AllON'
100
~s
........ 1ms
----- 1\
10
10
m.
\
\
, 4 • 8
\
" 2
Derating curves
G 3883 G 3665
II
lO~s
0.5
I
,
_. - I--f f- .
I
.. l.~
~ ~
"- t"-.. 1% i
f', '~/l(D
...... f'."
"
I
r...... ...... 1--.
I"'" D

Thermal transient response
DC current gain
hFE
G 3893
60
40
i,...-
~j...
125'C
'"25'C
v .....
T case :- 300C
VCE =4V
........
1\
........
'"
~
20
10
10-1
4 '8
1
4 '8
10
4 '8
le(A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE($at)
(V)
G 3894
VCE(sat)
(v)
hFE =10
G-,j895
4
Ie
t- lOA
- '1iJA
30A
40A
0-- 50A
60A
1.5
-30'C
25'C
i2~
o
""'+-
~
Ie (A)
0.5
o
4 68
10-1 1
F
"" -v.
1/
./
V
4 68
·10
4 6 8
IC(A)
316

Base-emitter saturation voltage
Saturated switching characteristics
VBE(sat )
CV)
hFE :::10
1.5
-30'C
I~
11~
--;::;;
-,
(/
.II
V.7
~
G 3696
8
(fJ S )
6
,
2
•
hFE ; 10
Vee; 100v
Tease =25°C
ts
...........
r---.
"
G 3897
I
J
0.5
o
10-1
, " 8
l....-
I--
L. 68
10
, 68
le CA )
2
1
"-
r--....
ton_ l----' V
i"- tt ~
6 8 6 •
10 le (A)
Saturated switching characteristics
G 3898
8 --Y+---I hFE ; 10 a-
,
Vee ;100V
"=
,
-
:
I
I---- ~
i '"
, ; T case-;:125°C t-
r-....
I
I ~ I ~ ! I I 1
I
~ i ! ! .~
I!
I
1
i
----I
"-
~J W
,...... rr .t on
~
I! l,tt I
II i I I
10 Ie (A)
i
tT
(MHz)
20
10
Transition frequency
./
/'
V
"cE;5V
f:::1MHz
-Il'
G 3899
I
r
6 8 6 8
10-1 IC (A)
317

Collector-base capacitance
G 3900
C~p~~a ~I::.f. ft ~=lR=-=-tt··t++ttlft\=':·=Hf-!-H=t:H:j:;j
f---t-- 1: H: f-- B f+
f-+- , rt-- -- T
C--' l-C·++++++---f-l-+J H+H--+-+-H+H+I
f--! I II ,I ~+
I
i
i
, I !
!
I
IC 8
(A) 6
10
2
8
6
,
Clamped reverse bias safe
operating areas
G 3901
2
8
6
,==
r-r
SEE TEST CIRCUIT OF FIG. 1
2
II IIII IIIII
10'
8
10
8
10'
, ,8
VCS (V)
1 111111 11,11
, 68 , 68
2 2
10 10'
2 , 56
CJJ VCE (V )
Fig. 1 -
Clamped EsA> test circuit
Fig. 2 -
Switching times test circuit
(resistive load)
TEST CONDITIONS'
7V"I- vss I .. 2V
Ic/ l s=10
tpJl
40V
500 fJH
TEST CONDITIONS:
Vcc = 100V
Vcc -VCE(sat)
RC = I C
RC
Vcc
t P ::: adjusted for
nommal Ie
R8S ;.In
I NPUT PULSE
pulse width =10 I's
tr I tf::: SOns
duty cycle :::1 %
318

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, HIGH POWER, FAST SWITCHING
The BUT13 is a silicon epitaxial planar NPN Darlington transistor with integrated baseemitter
speed-up diode, mounted in jedec TO-3 metal case. It is particularly suitable as
output stage in high power, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (I B = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (t p = 10ms)
IB Base current
P tot Total power dissipation Tease ~ 25°C
T stg Storage temperature
T j Junction temperature
600 V
400 V
10 V
28 A
35 A
6 A
175 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGRAM
;-- -- ~-=-:::lc -;
MECHANICAL DATA
~ i'
f!, _ O! I
, ,
',t~
~.I.
0[
R1 = loon
R2 = 350n
Dimensions in mm
Collector connected to case
TD.-3
319
10/82

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEV Collector cutoff VCE = 600V 100 jlA
current (V8E = -1.5V) VCE = 600V Tease = 100°C 2 mA
ICEO Collector cutoff VCE = 400V 1 mA
current (1 8 = 0)
IE80 * Emitter cutoff VE8 = 2V 175 mA
current (Ic = 0)
V CEO (sus) Collector cutoff Ic = 100mA 400 V
sustaining voltage
V CE(sa!) * Collector-emitter Ic = lOA 18 = 0.5A 2 V
saturation voltage Ic = 18A 18 = 1.8A 2.5 V
Ic = 22A 18 = 2.2A 3 V
Ic = 28A 18 = 5.6A 5 V
V 8E(sat) * Base-emitter Ic = lOA 18 = 0.5A 2.5 V
saturation voltage Ic = 18A 18 = 1.8A 3 V
Ic = 22A 18 = 2.2A 3.3 V
hFE DC current gain Ic = lOA VCE = 5V 30 V
Ic = 18A VCE = 5V 20 V
V F Diode forward voltage IF = 22A 4 V
RESISTIVE SWITCHING TIMES
ton Turn-on time 0.35 0.6 jlS
Vcc = 250V Ie = lOA
ts Storage time IBI = 0.5A
V BE(off) = -5V
0.8 1.5 jlS
Fall time
0.25 0.6 jlS
t f
320

~ ~-
~ ~.
ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
INDUCTIVE SWITCHING TIMES
t5 Storage time
V Clamp = 250V
0.8 1.5
Ic = lOA
/J.s
tf Fall time IB1 0.5A; VBE(off) = -5V 0.08 0.5 /J.s
t5 Storage ti me
V Clamp = 250V Ic = 20A
tf Fall time IBI = 2A; VBE(Off) = 5V
0.8 1.5 /J.s
0.35 0.7 /J.s
* Pu Ised: pulse duration = 300 /J.s, duty cycle = 1.5%.
Safe operating areas -----
10
G-4B161
lC~~"LSElY
,'ll'\..5ms lms 1\ 100.05 !i
-
IcMAX C~NT~I\
i
I i ]i'
'-t-'
I
~-----l-_ ...--l. __ '1
\.
, ' ,: I , I I
' I
1
"
,I
! :1
'ii 1 I ! ", ,I I
i
I I'
e~ ==r
6r=: ~ttRt +--
-++Htt
41---f--H " . 1--1
--+ I
: I,
-L:_ '1\ " ,
~-T: : l.l).
I-
21---1
i 'I I
I'
8 -.. :
5
4
~+
--
TIr
'II II \1\
! ~ I : i i
! I· II I I
4 6 8
10
I
I
t ~
II II
321

DC current gain
Collector-emitter saturation voltage
.Vc~r4=
G 4722
G l, 724
10~
10 B
+12~'Ci'
/l"
+25°C
~-
-, ,
10
I
!
/.
r'
~-
----
-
if: J
I
-
i~-+'
I : I I!
l~-
r-:-
-'--
. I I
i --1
I
i
..!..-
± ~
1\\
, J
L i !
I J
iJ~
.1-- -
i\
H r-
I
'0
I
i
I'
III
10
1---+-+-+ H+++---+-++-I~,j +H--lljXP C I
~II!\:
_-+-1- HiT
VCE(sat
Collector-emitter saturation voltage
) I I 111111 \ II 1111
(v)
0.1 11A SA lOA lSA : 20A
"
;--
"-
t--
,
G 4726
I
10 10' 10' Is (mA)
:
VSE(sat
( V)
)
Base-emitter saturation voltage
-40'C
r-r
f--" 2S'C
I-- 12S'C
-,
10
r--
r--l
I
\
hFE =10
--"'"
V
I
I I
VIJ
A
U
'(f
II
10
I
,
G "72 7/\
I
i
I
II II
i I II
I
322

DC current gain
Collector-emitter saturation voltage
G "725
I I 1
108~_.
·1
10
i ! 1
I • Ii 1.11 lill!
, , a
10 IC(A)
·1
10
I
4+ ], ~.
i I: I
,
,
! I
: I i
, ,8 , , a
10 iC(A)
,
VSE(sat )
(V)
Base-emitter saturation voltage
i"""'"
~
~
G 4728
1111 1.#1 I
h FE"lO/I I
//hFE "2C
Vh
'/
hFE" 100
l
I
cceo
(pF)
200
Collector base capacitance
1\
\
I\,
" f'., r-....
G 472 9
100
......
·1
10
10
10 Vcs (V)
323

v,
(V)
-,
10
Diode forward voltage
1---_. ...
25~
G ~ 4730
tL
e----- ._--+-+-
t--
I
I
I
~
-'"'~4-f-
--
f
--
. ill
. , I
+t
I i I I
10
v
)
Collector cutoff current
VeE= 600V
VBE off =1,6 V
.....
G 1.731
f-·
f- +-t/ I-
I--
f--
...... V 1
-fo
25 50 75 100 125
le2
(A)
Reverse peak current
'/
t-~
-~ 1-1-m,
- t1.
VeE= -2V·
Jn~FE=50 I
:::::;;... VSE=-lV
-=-
+~
G to 737
VCC=250V
!
"BE=- 5V - ~
t'
. .c. ____
-_.
Saturated switching characteristics
(resistive load)
-1
10
i
I
i
i
I
10 Ie (A)
10 Ie (A)
324

Saturated switching characteristics
(inductive load)
Fall time
G 4815
+- I-e--.-
I.
1/
10' f-----+---+--+-+-+-+
h FE=10
clamp= 250V
--
lOA
r-.r-.I:::..
I-
SA
j..--V
10 Ie (A)
Storage time
G 4739
Storage time
G-t. 78 3
'0
)
~
~A
t-- SA
1-1-
hFE =10
Vcla~_= 2 SOV
-1 L~
-,
10
)
,
I
I...: ,
i't'"
"
Vc lamp-250V ~~
Ie - SA
' 1c='0A t:::
"FE=100
1-: __ Ie =20A~hFE~'ioc=1= - 1= hFE; 20
i-H-
,.- I- - -,-
I--
-,
10
I
I
i
j
l-
i
8 ISZIlS 1
325

-I
10
-,
10
)
Fall time
1
1
V clamp= 250 v ~
I ! I 1 I
i
G 4731.
I--j--
~~~OACt,:J=~--:-~
[-1-+--'" hFE - " - - j- , ++--t--+-
1--' 1_";'_4~ ~:-r-.; c-il 05A h 0100
1 i I 1r5ct: FE
1
leo10A c __
1 +
~.LI
' i
r I I :
I
i
hFE020'
fTr
Ie B
(Al6
Clamped reverse bias safe operating
area
G IoBI7
f==.'
==---+
"
10
-I
10
-- -
f--+f--
t-
i
10
I 1
I I
hFE 020
i
VSE o-5V
RBE;'2.2 n
I i
; I
Iii
10'
Vclamp(Vl
Overload safe operating areas
Thermal transient response
Ie
(A)
40
., I
II
I
G-J668
30
20
10 26: 0,0 1 t­
, I
, 1: 1
T
10
J
--+ I 'Httt--
1 ..LILLWll---LLllllIw......;-L.L : IlL-!. 111..LLlJllli-..L.LJ.JJ.WJ I
10.""
10- L-.L.
j'm'
10 10 ' 10 10 ?:(sec)
326

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, HIGH POWER, FAST SWITCHING
The BUT13P is a silicon epitaxial planar NPN Darlington transistor with integrated base-emitter
speed-up diode, mounted in SOT -93 plastic package.
It is particularly suitable as output stage in high power, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
VCSO
V CEO
V ESO
Ic
ICM
Is
P tot
T stg
Tj
Collector-base voltage (I E = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (tp = 10 ms)
Base current
Total power dissipation Tease ,;;; 25°C
Storage temperature
Junction temperature
600 V
400 V
10 V
28 A
35 A
6 A
150 W
-65 to 175 °C
175 °C
INTERNAL SCHEMATIC DIAGRAM
c
,-------------,
Dl
R1 TYP.100n
R2 TYP. 350.12
-- ~,
MECHANICAL DATA
Dimensions in mm
Collecto.r connected to. tab.
(sirn. toTO.:.218ISOT-93
327
3/82

THERMAL DATA
Rth j-case Thermal resistance junction-case max °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEv * Collector cutoff V CE = 600V 100 J.1A
current (VBE = -1.5V) V CE= 600V (T c= 100°C) 2 mA
IcEO Collector cutoff V CE = 400V 1 mA
current (I B= 0)
lEBO * Emitter cutoff V EB = 2V 175 mA
current (Ic= 0)
V CEO(sust Collector-emitter Ic = 100 mA 400 V
sustaining voltage
V CE(sat) * Collector-emitter Ic= 10A IB= 0.5A 2 V
saturation voltage Ic= 18A IB= 1.8A 2.5 V
Ic= 22A IB= 2.2A 3 V
Ic= 28A IB= 5.6A 5 V
V BE(sat) * Base-emitter Ic= 10A IB= 0.5A 2.5 V
saturation voltage Ic= 18A IB= 1.8A 3 V
Ic= 22A IB= 2.2A 3.3 V
hFE DC Current gain Ic= 10A V CE = 5V 30 -
Ic= 18A V CE = 5V 20 -
V F Diode forward voltage IF= 22A 4 V
328

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
RESISTIVE SWITCHING TIMES
ton Turn-on time Vcc= 250V 0.35 0.6 p.s
Ic= lOA
t, Storage time lSI = 0.5A 0.8 1.5 p.s
V SE(off)= -5V
tf Fall time 0.25 0.6 p.s
INDUCTIVE SWITCHING TIMES
t, Storage time VClamp= 250V 0.8 1.5 p.s
Ic= lOA lSI = 0.5A
tf Fall time VSE(off)= -5V 0.08 0.5 p.s
t, Storage time VClamp= 250V 0.8 1.5 p.s
tf Fall time
Ic= 20A ISl= 2A
VSE(off)= -5V 0.35 0.7 p.s
* Pulsed: pulse duration = 300 p.s, duty cycle = 1.5%
329

DC current gain
G 10722
VCE= sv
DC current gain
+125-C
A
+25-C
:/
,/
~
.-
10
•
V
/-40'C
1\\
..
1\
\
-,
10
4 ••
.
4 • 8
'0 Ic(A)
lCl'
4 •• 4 •• 4 '8
10 Ic(A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat
(V)
)
G 4725
-----I-
10
•
hFE='0
I 1/, hFE='0
/ 'I
?--
hFE =20
PI r++
4 •• 4 ,.
to 10
-1
10
4 .8
10
330

Collector-emitter saturation voltage
G- 4726
VCE(sal )
L L IIIU \ 1111
(V)
1111
0.1 lA SA lOA 1SA , ZOA
VBE(s"l )
(V)
Base-emitter saturation voltage
hBE =10
~
f/
'(f
VI
G - 1.721
'-
'-
r--
-40'C
--
r--r
~S'C
lZS'C
-........
f-'"
i,...-
V
10 10' IB(mAl
-I
10
10
Base-emitter saturation voltage
Collector-base capacitance
VBE(sal
(V)
)
i=""'"
..... ~
~
G 4728
1111 1.11 I
hFE=10/i I
//hFE =2
VII 1
VI I
hFE=100 '
CCBO
( pF)
zoo
1\
\
I\,
G
'('729
"- r--.
r-....
100
~
-I
10
10
10
Vca(V)
331

Forward voltage
v
)
I CEV Temperature
G '731
1-~--+2C::5~:-::'C+ ___ --+-++-t--'_4:+0~''-C~~ ---
I----t---t---t---t-H-t+t---j-- - -- --
VCE=600V
~-:- r--~~- VSE ott =1,6V
10
I---
~
"
o 25 50 75 100 125 Tc ('C)
Saturated switching characteristics
Saturated switching characteristics
(resistive)
G-4732
(i nductive)
G- 4733
I
I
1'.) --=: (1")
VCC=250V --
-
iVflamp_250 v +
hFE =50
VSE=-5V
I hFE= 50
. VSE=-5V ---
,
-
Is
Is
-~
- ./
--
T
101'J.. .... ./
-, ;; It ...... -,
10 10 ~ ,-====,
.'-
.....
~
t--- .... -
-2 -2
1.0 10
10 IC CAl 10 IC (Al
==
332

t
-,
10
J
Fall time (resistive)
Vclamp =250V
~:::- Ie -20A hFPl
i"-t+-
Ie-SA t-
~~'0A
G 473"
r-
hFE "'00
hF£"20'
IB2
(A)
Reverse base current vs.
VSE(Off)
/'
.-
Ie
G 037
and
f-H hFE= so-t:--=rt
--r--- H+lvec2S0V -- -. - -
~--- -~
cUL --1- +--
,"sE=-sv_
mt-~~
-- i ___
VBE"-2~ -----
k:::::: ::;;..- VBE"-lV ~-L
-, : --1-----
-+t-
-
- f-
--- (--- i--f-
- - -
-,
10
o
-1
10
-- --
I
10 Ie (AJ
Storage time (inductive)
Storage time (inductive)
G 4738
G "47 3 9
~
==
"-
....
Ie =20A
le"'0A
Vclamp=250V
I
Ir" SA
hfE='00
~~hFE=10, -
_ hFE= 20
10
)
hFE "10
Vdamp=250V
-,
10
-...J
"-
SA
lOA ..........
-1
10
333

Ie
(A )
20
10
o
Clamped reverse bias safe operating
areas
G- 4735
1
hFE :20
V BEoft ,-5V t-t-t-
RaE"- 2.2!l t-t-t-
1
1-I-
100 200 300 400 500 600 Vclarrp(V)
Ie
(A)
10
-2
10
,
1
8
6
,
1
B
6
,
1
8
6
,
1
Safe operating areas
G - 4736
I"
N 100~S\
~ERA~5~
~ms I lms
~W~~~;ION
oe
1\
\1\
, "
10
"6 B_2 2 468 -J 2 468
10 10 VeEry)
Thermal transient response
334

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT POWER SWITCH ,'"
The BUV20, BUV21 and BUV22 are silicon multiepitaxial plail~r NPf\ltr~hsistor in Jedec
TO-3 metal case, intended for use in switching and linear af:Splication~,'in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS :'BUV20 BUV21 BUV22
V CBO Collector-base voltage (I E = 0), '..
V CER Collector-emitter voltage (R Bq;.,;,,1t:lOh)
V CEX Collector-emitter voltage (V~E"" -1:!~,\(J
V CEO Collector-emitter voltage {I e';=, 0) n,Ae~~~~ture
160V 250V 300V
150V 240V 290V
160V 250V 300V
125V
7V
200V
7V
250V
7V
50A 40A 40A
60A 50A 50A
lOA 8A 8A
250W
-65 to 200°C
200°C
MECHANICAL DATA
Dimensions in mm
Collectorcormected.to case
335 10/82

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 0.7 °C/W
ELECTRICAL CHARACTERISTICS (T case = 2SOC unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEO Collector cutoff for BUV20 VCE = 100V 3 mA
current (I s = 0) for BUV21 VCE = 160V 3 mA
for BUV22 VCE = 200V 3 mA
ICEX Collector cutoff VCE = VCEX
current (V BE = -l.SA) for BUV20 3 mA
for BUV21 3 mA
for BUV22 3 mA
at T case = 12SoC
for BUV20 12 mA
for BUV21 12 mA
for BUV22 12 mA
IESO
Emitter cutoff
current (Ic = 0)
VES = SV 1 mA
V CEo(susi Collector-emitter
sustaining voltage
Ic = 200mA L = 2SmH
for BUV20 12S V
(Is = 0) for BUV21 200 V
for BUV22 2S0 V
V(SR)ES;; Emitter-base IE = SOmA 7 V
breakdown voltage
(lc = 0)
V CE(sat) * Collector-emitter for BUV20
saturation voltage Ic =2SA Is = 2.SA 0.3 0.6 V
Ic = SOA Is =SA 0.7 1.2 V
for BUV21
Ic = 12A Is = 1.2A 0.2 0.6 V
Ic = 2SA
for BUV22
Is =3A 0.9 1.S V
Ic = lOA Is = lA 0.2 1 V
Ic = 20A IB = 2.SA O.S 1.5 V
VSE(sat) * Base-emitter
for BUV20
saturation voltage Ic =50A Is =5A 1.4 2 V
for BUV21
Ic =25A
for BUV22
I s =3A 1.2 1.5 V
Ic =40A Is=4A 1.2 1.5 V
336

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
hFE * DC current gain for BUV20
60 VeE = 2V
VeE =4V
Ie = 25A
Ie = 50A
20
10
-
-
for BUV21
VeE = 2V
VeE = 4V
Ie = 12A
IB = 25A
20
10
60 -
-
for BUV22
VeE = 4V Ie = 10A 20
VeE = 4V Ie = 20A 10
60 -
-
fT Transition frequency VeE = 15V Ie =2A
f = 10MHz 8 MHz
ton Turn-on time for BUV20
Ie = 50A IB =5A 1.5 Ils
for BUV21
Ie = 25A IB =3A 1.2 Ils
for BUV22
Ie = 20A IB = 2.5A 1.3 IlS
t f Fall time for BUV20
Ie = 50A IBI =-IB2 =5A 0.3 Ils
for BUV21
Ie = 25A I Bl =-1 B2 =3A 0.4 Ils
for BUV22
Ie = 20A IBI =-IB2=2.5A 0.5 Ils
ts Storage time for BUV20
Ie = 50A IBI =-IB2 =5A 1.2 Ils
for BUV21
Ie = 25A IBI =-I B2 =3A 1.8 IlS
for BUV22
Ie = 20A IBI =-IB2=2.5A 2 Ils
* Pulsed. pulse duration = 300 fJ.S, duty cycle';;; 2%.
337

MULTIEPITAXIAL MESA NPN
POWE R SWI TCH
~fJ~P
The BUV23, BUV24 and BUV25 are silicon multiepitaxial rrl~f~:~~PN '~pnsistors in Jedec
TO-3 metal case, intended for use in power switching 't~;'!Iilftary and industrial
equipments.
ABSOLUTE MAXIMUM RATINGS
BUV24
BUV25
V C80 Collector-base voltate (I E = 0)
VCER Collector -emitter voltage (R
V CEX Collector-emitter voltage (V
V CEO Collector--emitter volt
V E80 Emitter-base voltage"
Ic Collector current
ICM Collector peals. c'
18 Base cu rrent ,I
P tot Total pow',
Tst9 Stor
T j
INTERN
EMATIC DIAGR::~~{
400V
390V
400V
325V
7V
30A
40A
6A
450V
440V
450V
400V
7V
20A
30A
4A
250W
-65 to 200°C
200°C
500V
500V
500V
500V
7V
15A
20A
3A
E
MECHANICAL DATA
Dimensions in mm
10/82 338

THERMAL DATA
R!h j-case Thermal resistance junction-case max. 0.7 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEO Collector cutoff VCE = 260V for BUV23 3 mA
current (1 6 = 0) VCE = 320V for BUV24 3 mA
VCE = 400V for BUV25 3 mA
ICEX Collector cutoff VCE = VCEX 3 mA
current (VBE =-1.5V) T case = 125°C
VCE=VCEX 12 mA
lEBO Emitter cutoff V EB = 5V 1 mA
current (I C = 0)
VCE(sa!) * Collector-emitter for BUV23
saturation voltage Ic =8A 16 = 1.6A 0.2 0.8 V
Ic = 16A IB = 3.2A 0.35 1 V
for BUV24
Ic =6A IB = 1.2A 0.15 0.6 V
Ic = 12A IB = 2.4A 0.3 1 V
for BUV25
Ic =4A IB = 0.8A 0.2 0.6 V
Ic =8A IB = 1.6A 0.6 1 V
V BE(sa!) * Base-emitter
for BUV23
saturation voltage Ic = 16A IB = 3.2A 1.15 1.5 V
for BUV24
Ic = 12A I B =2.4A 1 1.15 V
for BUV25
Ic =8A IB = 1.6A 1.2 1.5 V
V CEo(susi Collector-emitter Ic = 200mA L = 25mH
sustaining voltage for BUV23 325 V
for BUV24 400 V
for BUV25 500 V
V(BR)EB~ Emitter-base IE = 50mA 7 V
breakdown voltage
(lc = 0)
hFE * DC current gain VCE = 4V for BUV23
Ie. =8A 15 60 -
Ic = 16A 8 -
VCE = 4V for BUV24
Ic =6A 15 60 -
Ic = 12A 8 -
VCE = 4V for BUV25
Ic =4A 15 60 -
Ic =8A 8 -
339

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
fT Transition frequency VeE = 15V
f = 10MHz
Ie =2A
8 MHz
ton Turn-on time for BUV23
Ie = 16A Is = 3.2A 0.55 1.3 Ils
for BUV24
Ie = 12A Is = 2.4A 0.6 1.6 IlS
for BUV25
Ie =8A Is = 1.6A 0.9 1.8 IlS
tf Fall time for BUV23
Ie = 16A; lSI = -ls2 = 3.2A 0.26 1.2 115
for BUV24
Ie = 12A; lSI = -ls2 = 2.4A
for BUV25
0.6 1.4 115
Ie =8A; lSI = -ls2 = 1.6A 0.9 1.6 IlS
ts Storage time for BUV23
Ie = 16A; lSI = -ls2 = 3.2A 1.7 2.5 Ils
Ie = 12A; lSI = -ls2 = 2.4A
for BUV24
1.5 3 IlS
for BUV25
Ie =8A; lSI = -ls2 = 1.6A 3.5 5 Ils
* Pulsed: pulse duration = 300 IlS, duty cycle";;;; 2%.
340

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
,-
The BUV46 is a silicon multiepitaxial mesa NPN transistor in Jede(: TO-220 plastic package,
intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V sEf:fQ~ "
V CEX Collector-emitter voltage (V~E= }.~Yl
V CEO Collector-emitter volt~ge ~JE!S' •.?),.,'•••,.
V ESO Emitter-base voltage'.~~i'Z.:f~),·\ .• "
Ic Collector current'"
Is Base current i,\r;:; •.•• "'{
P tot Total pO~7r d'l~~iP~f6nat Tease < 25°C
T stg
Storaget~!!t~!ur~'"
T j J u n9,tIWn·t'J.m~IIt~u re
850 V
850 V
400 V
7 V
5 A
3 A
85 W
-65 to 175 °C
175 °C
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
10.4m.l>1
TO-220
341
10/82

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.76 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff VCE = 850V 100 J1A
current (V SE= 0) VCE = 850V Tease = 125°C 1 mA
ICER Collector cutoff VCE = 850V 300 J1A
current (R SE = 1 On) VCE = 850V T case = 125°C 2 mA
IESO Emitter cutoff VES = 7V 1 mA
current (I C = 0)
V CEO (susi Collector-emitter Ic = 100mA 400 V
sustaining voltage
V CE (sat) * Collector-emitter Ic = 2.5A Is = 0.5A 1.5 V
saturation voltage Ic = 3.5A Is = 0.7A 5 V
VSE(sat) * Base-emitter Ic = 2.5A Is = 0.5A 1.3 V
saturation voltage
ton Turn-time 1 J1S
ts
Storage time
Ic = 2.5A Vec = 150V
lSI = -ls2 = 0.5 A
3 J1S
tf Fall time 0.8 J1S
* Pulsed: pulse duration = 300 j.tS, duty cycle = 2%.
342

MUlTIEPITAXIAl MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUV47 is silicon multiepitaxial mesa NPN transistor in SOT -93 plastic package. It is
intended for high voltage, fast switching and industrial applications.
ABSOLUTE MAXIMUM RATINGS
BUV47
BUV47A
VCSO
VCEO
VEBO
Ic
ICM
Is
IBM
P tot
T stg
T j
Collector-base voltage (I E
Storage temper~tur!l' '
0)
Collector-emitter voltage (I s = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peark currentjtp« 5trts,}
Base current'"", '
Base peak current.{~

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.25 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEX Collector cutoff VCE = VCBO 0.15 mA
current (V BE = -2.5V) VCE = VCBO Tease = 125°C 1.5 mA
ICER Collector cutoff VCE = VCBO 0.4 mA
current (R BE = 10.11) VCE = VCBO T case = 125°C 3 mA
lEBO Emitter cutoff VEB = 5V 1 mA
current (Ic = 0)
VEBO Emitter -base IE = 0.05A 7 30 mA
voltage (Ic = 0)
V CEO(SU~ Collector-emitter Ic = 0.2A 400 V
sustaining voltage L = 25mH
(lB = 0) for BUV47A 450 V
V CE(sat) * Collector-emitter Ic =5A IB = 1A 1.5 V
saturation voltage Ic =8A IB = 2.5A 3 V
VBE(Sat) * Base·-emitter Ic =5A IB = 1A 1.6 V
saturation voltage
344

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time 1 /J.s
Resistive load
ts Storage ti me Ie = 5A IBI = 1A 3 /J.s
IB2 = -lA Vee = 150V
t f Fall time 0.8 /J.s
t f Fall time I nductive load 0.5 /J.s
Ie = 5A IBI = 1A
VBE = -5V Vee = 300V
L=3/J.H T j = 100°C
* Pulsed: pulse duration 0= 300 ilS, duty cycle 0= 1.5%.
Safe operati ng areas
G-4793
IC MAX PULSED PULSE OPERATION *
10
~X CONT.
III ..... I' .~
10-1
8
6
10-2
III /'
10,...s - /
lOOps
~
'"
lms
I
5ms
I D.C. OPERATION '\.
r--
\. "
*FOR SINGLE NON
RI PETITI PULSE '\. \
i"-
I
TlP47_
II
TlP47A--I
4 6 8 4 6 8
10 10 2
\
345

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE FAST SWITCHING
The BUV48 is silicon multiepitaxial mesa NPN transistor in :.>df~9~\~~;l~~I~ package. It is
intended for high voltage, high current, fast switching and i~

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEX Collector cutoff VCE = Vcso 0.2 mA
current (V SE = 2.5V) VCE=VCSO Tease = 125°C 2 mA
IESO Emitter cutoff VES = 5V 1 mA
current (I C = 0)
ICER Collector cutoff VCE=VCSO 0.5 rnA
current (R SE = 10n) VCE=VCSO Tease = 125°C 4 rnA
V CEo(susi Collector-emitter Ic = 200mA L = 25mH
sustaining voltage for BUV48 400 V
(Is = 0) for BUV48A 450 V
V ESO Emitter-base IE = 0.05A 7 30 V
voltage (lc = 0)
V CE(sat) * Collector-emitter Ic = lOA Is = 2A
saturation voltage for BUV48 1.5 V
Ic = SA Is = 1.6A
for BUV48A 1.5 V
Ic = 15A Is = 3A
for BUV48 5 V
Ic = 12A Is=2.4A
for BUV48A 5 V
V SE(sat) * Base--emitter Ic = lOA Is = 2A
saturation voltage for BUV48 1.6 V
Ic = SA Is = 1.6A
for BUV48A 1.6 V
ton Turn--on time Vcc = 150V VSE = -6V 0.55 1 Ils
RS2 = 1.5; Ic = lOA (BUV4S)
t, Storage time Ic = SA (BUV4SA) 1.5 3 Ils
lSI = -ls2 = 2A (BUV4S)
t f Fall time lSI = -IS2 = 1.6A (BUV4SA) 0.3 O.S IlS
* Pulsed: pulse duration = 300 IlS duty cycle = 1.5%.
347

MULTI EPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUWll is silicon multiepitaxial mesa NPN transistors in
intended for high voltage, fast switching industrial applicati n .
ABSOLUTE MAXIMUM RATINGS
V CES
V CEO
Ic
ICM
IB
IBM
P tot
Tstg
T j
Collector-emitter voltage (V B
Collector-emitter voltage (I
Collector current
Collector peak curre
Base current
Base peak curre
Total power
Storage
Junct"
850 V
400 V
5 A
10 A
2 A
3 A
100 W
-65 to 175
175
°C
°C
INTER
ATIC DIAGRAM
MECHANICAL DATA
Dimensions in mm
10/82 348

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 1.5 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff VCE = 850V 1 mA
current (V BE = 0) VCE = 850V T j = 125°C 2 mA
lEBO Emitter cutoff VEB = 9V 10 mA
current (Ic = 0)
V CEO (susi Collector-emitter Ic = 100mA L = 25mH 400 V
sustaining voltage
V CE (sat) * Collector-emitter Ic =3A IB = 0.6A 1.5 V
saturation voltage
V BE (sat) * Base-emitter Ic =3A IB = 0.6A 1.4 V
saturation voltage
ton Turn-on time 1 }J.s
ts
Storage time
Ic =3A IB1 = 0.6A
IB2 = -0.6A
4 }J.s
t f Fall time 0.8 }J.s
* Pulsed: pulse duration = 300 IlS, duty cycle = 1.5%.
349

Safe operating areas
-
10
i I
--
ICMAX PULSED
I
PULSE OPERATlON*;
10-'
8
6
IC MAX CONT.
I
i I /\,
I i I
10/-ls- //"\
100/-ls
lms
5ms
,
\ ",
I D.C OPERATION
*FOR SINGLE NON
REPETITIVE PULSE
"
i\
6 8
10
4 6 8
10 2 4 6 8
VCE.(V)
350

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUW12 and BUW12A are silicon multiepitaxial mesa NPN transistors ihSOT-93 plastic
package, particularly intended for high voltage, fast switching industri

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 1.2 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff VCE = VCES 1 mA
current (V BE = 0) VCE = VCES Tj = 125°C 3 mA
lEBO Emitter cutoff VEB = 9V 10 mA
current (I C = 0)
V CEo(susi Collector-emitter Ic = 100mA L = 25mH 400 V
sustaining voltage
V CE(sat) * Collector-emitter Ic =6A IB = 1.2A 1.5 V
saturation voltage
VBE(sat) * Base emitter Ic =6A IB = 1.2A 1.5 V
saturation voltage
ton Turn-on time 1 !1S
ts
Storage time
Ic = 6A IBI = 1.2A
IB2 = 1.2A
4 !1S
t f Fall time 0.8 !1s
* Pulsed: pulse duration = 300 J.1S, duty cycle = 1.5%.
352

Safe operating areas
ICMAX CONT.
F- D. C.OPERA TION
I
1ms
1\ I I
\ 5ms
'\
I III "
I'
10 2 L-~L-~-LL6UB~---L-L~4-L6UUB~---L-L~4LL6LUB~
10
10 2
353

MULTIEPITAXIAL MESA PNP
HIGH VOLTAGE POWER SWITCH
The BUW 32 is a silicon multipitaxial mesa PNP transistor in Jedec TO-3 metal case.
It is intended for high voltage. fast switching and industrial applications. The complementary
N PN type is the BUW 35.
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V BE= 0)
V CEO Collector-emitter voltage (I B= 0)
V EBO Emitter·base voltage (I e= 0)
Ie Collector current
IB Base current
P tot Total power dissipation at T case:S25°C
T stg Storage temperature
T j Junction temperature
-450 V
-400 V
-7 V
-10 A
-5 A
125 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
5/80 354

THERMAL DATA
F\h j-case Thermal resistance junction-case max 1.4 °C!W
ELECTR I CAL CHARACTERISTI CS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff V CE=-450V -500 itA
current (V BE=O)
ICES Collector cutoff V CE=-450V -3 mA
current (I c=O) T case=125°C
lEBO Emitter cutoff V Es=-7V -1 mA
current (I c = 0)
V CEO (sus) ·Collector-emitter Ic =-100mA -400 V
sustaining voltage
(IB=O)
VCE(sat) • Collector -emitter Ic =-5A I B =-1A -1.5 V
saturation voltage
VBE(Sat) • Base-emitter
saturation voltage
Ic =-5A I B =-1A -1.5 V
hFE • DC current gain Ic =-1A V cE=-5V 15 -
ton Turn-on time Ic =-5A I B =-1A
V cc=-250V 0.75 I1S
ts
t f
Storage time
Fall time
Ic =-5A V cc=-250V
I B1 =-1A I B2 =2A
3 I1S
0.8 I1S
• Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%
355

Safe operating areas
-IC
(A )
G- 3658
PUL :x:.'
5
1"'-
10
c--'
I-DC,OPERATON
- - i +-
f--- - _..
~
1= t-
I---
l- 4 +--
I III
• FOR SINGLE NON
REPETITIVE PLlSE
10-'
f---
.-
10- 2 1 10
RA"TIW
f1o!Js
l00iJS
- lms
-
10ms
r\-
----
~ I
1\,\ I
10 2 400 10 3 -VCE (V)
I
Derating curves
l'
G 3665
i
f--i-i.
I , ' ,\
, }5
...,'
l""ii ~
, ~/%(~
I 1'""1--.. tco
"" l"'-t--,.
I' ~
0,5
,o

DC current gain
K·······l-.~
r 11-.- - '-i-r
I I I '1/
i 1\
10 I---+-+-+-f-+++t+-.-= '--+_-. ~~i-W-I-l------I---1
-VCE(sa.t)
Iv)
Collector-emitter saturation voltage
,
"FE'S
1-.--+
f---..
I
f-.---1--"
I i II II
I
- -- - ---+--- 1-----. - f---
f-
I
G 3673
I
1 I
/
Ii
J
II
I
I
a
i )
, I
1----. +-- ~TT 'II
----
10-1
"'"
-VCElsat)
I V)
Collector-emitter saturation voltage
1 1\
IT
G 3850
Base-emitter saturation voltage
Sf---.-
-VBE(sat
Iv) I---f-
-
G 3663
) III II "FE'S I, I
I I
a
3A 1\.
J

Saturated switching characteristics
G-3670
IA) -'e8~~~E
1===
Clamped reverse bias
safe operating areas
81==--------
f-------
•
2
1
8
~
--..........
..............
______ L o.±---
Vee :-250V
hFE :5
IR7 :-2IR'
K
-
If ./
..... V
ton
G - 3687
-- =
,/
"-
r--- t---
10 _1 L--------'------'-----'-C4~5C::'. _-'---'--..LJ...J
tOO 200 400 veE (clamp) (V)
4
6 -Ie (Al
Clamped ES/btest circuit
TEST CONDITIONS:
5V" l-vBB I > 2V
lells :5
21Bl >1-IB2 1 > IBl
tp =adjusted for
nominal Ie
Ree = adjusted for
IB2
tpU
-40V
500 )JH
Vctamp
358

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUW 34, BUW 35 and BUW 36 are silicon multiepitaxial mesa NPN transistors in
Jedec TO-3 metal case. They are intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V BE= 0)
V CEO Collector-emitter voltage (I B= 0)
V EBO Emitter-base voltage (I C= 0)
Ic Collector current
ICM Collector peak current
IB Base current
Ptot Total power dissipation at T case :::;25°C
Tst9 Storage temperature
T j . Junction temperature
BUW34 BUW35 BUW36
500V 800V 900V
400V 400V 450V
7V
10A
15A
5A
125W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
6.2ma~
TO-3
359
5/80

TH ERMAL DATA
Rth j-case Thermal resistance junction-case max 1.4 °C/W
ELECTRICAL CHARACTERISTICS(T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BUW34 V CE=500V 500 itA
current (V BE=O) for BUW35 V cE=800V 500 itA
for BUW36 V cE=900V 500 itA
T case=125°C
for BUW34 V cE=500V 3 mA
for BUW35 V cE=800V 3 mA
for BUW36 V cE=900V 3 mA
lEBO Emitter cutoff V EB=7V 1 mA
current (I C = 0)
V CEO (sus) "'Collector-emitter Ic =100mA
sustaining voltage for BUW34 400 V
(IB=O) for BUW35 400 V
for BUW36 450 V
V CE (sat) '" Collector-emitter All types Ic =5A
saturation voltage IB =1A
1.5 V
for BUW35 Ic =8A 1.5 V
IB =2.5A
for BUW36 Ic =8A 3 V
IB =2:5A
VBE(Sat) '" Base-emitter All types Ic =5A
saturation voltage IB =1A
1.5 V
for BUW35 Ic =8A 1.8 V
IB =2.5A
for BUW36 Ic =8A 1.8 V
IB =2.5A
hFE '" DC current gain Ic =1A V cE=5V 15 -
ton Turn-on time Ic =5A V cc=250V 0.75 IlS
I B1 =1A
ts
t f
Storage time
Fall time
Ic =5A
I B1 =1A
V cc=250V
I B2 =-1A
3 Its
0.8 IlS
'" Pulsed: pulse duration = 300 ItS, duty cycle = 1.5%
360

Safe operating areas
Ic 8
6
(A) 4
10
IC MAX PULSED
l till f",.
Ie MAX CONTINUOUS
II II
DC OPERATION
*PULSE OPERATION
G- 3688
O}JS
111\1 .
lms ~JOO }.Is
10ms
\
\
\
10-1
8
6
* FOR SINGLE NON
REPETITIVE PULSE
I'
"-
['\.'\
10-2
,
6 8
10
BUW36
BUW34 - BUW35-
4 6 B
VeE (V )
Derating curves
Transient thermal response
I
I
G 3665
G-.166B
~~
I
~ ......... %

10
DC current gain
-
r--...
--- I-- ..-
25'C'"' !'...:
---
~ I--I-+-" r---.. ~l'
-30'C
1"-
VCE =5V
G 3693
Tease :: 125°C
VCE(sat)
(V)
0.5
Collector-emitter saturation voltage
hFE=5
Tease :: - 30 0 e }
25'C
125'e-H
r)
A./
~ V
6-3691
6 ,
IC (A)
6 B
6 B
Ie (A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat )
(V)
G 3818
VSE(sat )
(V)
hFE=5
G 3689
4
4A
3A\i
2A \.
1\
lA'-. No
A
6A
IC =SA
0.5 1.5 IS(A)
0.5
o
1----
f---
I--
-
10-'
25Y
case=-30°C L ..... ~
~
~ ./
125'C
6 B 6 B
Ic(A)
362

Saturated switching characteristics
t
(pS) 8---
s
10-'
4
z
8
•
4
z
- r--
VCC ; 250V
hFE ;5
162 ;-1 61
r--..... ts
tf
-~
V
4
"-
"
G 3690
"-
I"'--
/
/
/
Ie (A)
I
(ps )
•
10
Saturated switching characteristics
4
:::---"15 I
f------- 1--- ......
z
~
tf
r--...
Ion /"
.--- ........
G 369
VCC ; 250V
hFE ;5
162 ;-181
Tease-= 125 D C
./
...... 1'- ....,
z
-1
j
Clamped reverse bias
safe operating areas
Ie
(A ) f---
BUW34-35
H8UW36
G 3657
Clamped Es/b test circuit
----
[ i
I
[
I
40V
500 pH
r---
r----
f------- ---- I---
f------ - '-- f-
Bi BUrr
W34
10-'
100 200 500 VCE(damp) (V)
TEST CONDITIONS:
sv,. [-vss [ ,. 2V
Ic/IS;S
2IS,>[-IS2[>ISl
tp =adjustl!'d for
nomInal Ie
RBe = adJuste-d tor
IS2
363

MULTIEPITAXIAL MESA PNP
HIGH VOLTAGE POWER SWITCH
The BUW42 is a silicon multiepitaxial mesa PNP transistor in Jedec TO-3I11egf~:fl' intended
in fast switching applications for high output powers. The complernli\~

THERMAL DATA
Rth j-ease Thermal resistance junction-case max.
°C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max.
ICES Collector cutoff VCE = -450V -1
current (V BE = 0) VCE = -450V
Tease = 100°C -4
lEBO Emitter cutoff VEB = -7V -1
current (I C = 0)
V CEO(sus) Collector-emitter Ic = -100mA -400
sustaining voltage
(lB = 0)
V CE(sat) * Collector-emitter Ic = -10A IB = -2A -1.5
saturation voltage Ic = -15A IB = -3A -5
Tease = 100°C
Ic = -10A IB = -2A -2.5
V BE(sat) * Base-emitter Ic = -10A IB = -2A -1.6
saturation voltage Tease = 100°C
Ic = -10A IB = -2A -1.6
hFE * DC current gain Ic = -5A VCE = -2V 12 60
Ic = -10A VCE = -2V 6 30
Unit
mA
mA
mA
V
V
V
V
V
V
-
-
ton Turn-on time
Resistive load
ts Storage time
Vcc = -250V
Ic = -10A
t f
Fall time
lSI = -Is = -2A
* Pulsed: pulse duration = 200 /lS, duty cycle = 1.5%.
365
1
4
0.7
/ls
/lS
/ls
I;
il
i~
Il
I II
I.
I! 1
Ii (I
I

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE, HIGH CURRENT POWER SWITCH
The BUW 44, BUW 45 and BUW 46 are multiepitaxial mesa NPN transistors in Jedec
TO-3 metal case, intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V BE=" 0)
V CEO Collector-emitter voltage (I B= 0)
V EBO Emitter-base voltage (I C= 0)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at T case::;25°C
T stg Storage temperature
T j J unction temperature
BUW44 BUW45 BUW46
500V 800V 900V
400V 400V 450V
7V
15A
30A
10A
175W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
5/80 366

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BUW44 V CE=500V 500 IlA
current (V BE=O) for BUW45 V crBOOV 500 IlA
for BUW46 V cr900V 500 IlA
T case= 125°C
for BUW44 V CE=500V 3 rnA
for BUW45 V crBOOV 3 rnA
for BUW46 V cr900V 3 rnA
lEBO Emitter cutoff V Es=7V 1 rnA
current (I c= 0)
V CEO (SUs)*Coliector-emitter Ie =100mA
sustaining voltage for BUW44 400 V
for BUW45 400 V
for BUW46 450 V
VeE (sat)* Collector-emitter for BUW44
saturation voltage Ie =10A I B =2A 3 V
Ie =6A I B =1A 1.5 V
for BUW45 and BUW46
Ie =10A I B =2A 1.5 V
Ie =7A I B =1A 1.5 V
VBE(Sat) * Base-emitter for BUW44
saturation voltage Ie =10A I B =2A 1.B V
Ie =6A I B =1A
1.4 V
for BUW45 and BUW46
. I c =10A I B =2A 1.B V
Ie =7A I B =1A 1.4 V
367

ELECTRI CAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time I c =10A I Bl =2A ·0.75 I1S
V cc=250V
ts
Storage time
t, Fall time
I c =10A I Bl =2A
I B2 =-2A V cc=250V
3 I1S
0.8 I1S
* Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%
Safe operating areas Ie 8
(A)
10
6
2
,
8
6
4
2
10-1
8
6
4
2
Ie MAX PULSED "P
Ie MAX eONT.
."
De OPERATION
"FOR SINGLE NON
RI PETITIVE P LSE
PERA I
I~ 100
~ ~m5
~
ms ,
1\
1\
BUW44-45-IaUW46
10,us
G 3862
4 6 8 468 2468
10 10 3 VeE (V )
368

Thermal transient response
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sa\)
(V)
hFE =5
,
C. 3823
VCE(sal)
(V)
G-J824
- -
, I I
Tease =125°C
1\
0.5
-2 , 68
1
~
25'C\
-30'(
, 6 8
t.,
I
IT
10
2
\ "'5A
12A
OA
8 f\.
SA
4A ....
I'...
"
"
I-..
Ie (A)
369

VSE(sat)
( V )
0,5
1, 2
10
8
2
Base-emitter saturation voltage
G - 3825
11 /I
II I
II III
Tease :::-30 o S V
V
hFE =5
, 6 8 , 6 8
1
10
G J832
BUW45
BUW46
BUW44
I
I
I- 25'
V~
....... V
I- V,25'e
1-1-
Clamped reverse bias
safe operating·. areas
, 6 8
Ie (A)
I
()'o)
Saturated switching
characteristics
10
8
10
8
2
II I
=250V
Vee
hFE =5
IB2 =-I B1
G-J831
~
'I
......... I
If ~ L"
i-
1
6 8 4 6 8 2
10" 1 10 Ie (A)
Clamped EsA> test circuit
TEST CONDITIONS·
5V;. I-vss I .. 2V
Ie / I B =5
2IS1>1-IS21>161
I P = adjusted for
nominal Ie
RBS = adjusted for
162
s- 3649
40V
~500 I'H
lUT.
Vcl amp
100 200 450 750 VCE(clamp)(V)
370

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 10 is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case,
intended for use in switching and linear applications in military and industrial e­
quipment.
ABSOLUTE MAXIMUM RATINGS
V cso Collector-base voltage (I E = 0) 160 V
V CEX Collector-emitter voltage (V sE=-1.5V) 160 V
V CEO Collector-emitter voltage (I s= 0) 125 V
V ESO Emitter-base voltage (I c= 0) 7 V
Ic Collector current 25 A
ICM Collector peak current (t p=1 0 ms)
30 A
I s Base current
5 A
P tot Total power dissipation at T case :0:25 °C 150 W
T stg Stprage temperature
-65 to 200 °C
Junction temperature
200 °C
T j
INTERNAL SCHEMATIC DIAGR~4:
MECHANICAL DATA
Dimensions in mm
Collector Ilohnected to case
371 5/80

THERMAL DATA
F\h j-case Thermal resistance junction-case max 1 .1 7 °C /W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEO Collector cutoff V CE=100V 1.5 mA
current (I B=O)
- --
IcEX Collector cutoff . V CE=160V V B~-1.5V 1.5 mA
current Tcase=125°C mA
V CE=160V- V B~-1.5V 6
lEBO Emitter cutoff V EB=5V 1 mA
current ( I C = 0)
V CEO (sus) ·Collector-emitter Ic =200mA 125 V
sustaining voltage
VEBO Emitter-base IE =50mA 7 V
voltage
( Ic=O)
VCE(sat) • Coli ecto r -em itter Ic =10A IB =1A 0.3 0.6 V
saturation voltage Ic =20A IB =2A 0.7 1.2 V
VBE(Sat) • Base-emitter Ic =20A IB =2A 1.6 2 V
saturation voltage
hFE • DC current gain Ic =10A V CE=2V 20 60 -
Ic =20A V CE=4V 10 -
Isib Second breakdown V cE=30V t =1s 5 A
collector current V CE=48V t =1s 1 A
fr Transition frequency Ic =1A V CE=15V 8 MHz
f =10MHz
372

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =20A I B1 =2A 0.5 1.5 J,lS
(fig. 2)
Vcc=30V
ts Storage time 0.6 1.2 J,lS
(fig. 2)
Ic =20A I B1=-1 sr2A
t f Fall time
Vcc=30V
0.15 0.3 J,lS
(fig. 2)
Qamped EsA> V c1am8=125V 20 A
Collector current L =5 OJ,lH
(fig. 1)
* Pulsed: pulse duration =300 J,lS, duty cycle :s; 2%
30
25
Ie
(A)
Safe operating areas
G-4040
'eMAX PULSED PULSE OPERATION"
10l'S
/--1001'5
'CMAX CON "-
,r-lms
1 1 ,I'-. ~10ms
10
r-- DC OPERATION
1
0-1
11 1111
FOR SINGLE NON
REPETITIVE PULSE
0.5
'"
Derating curves
1 I
I
i
G 3665
- r- -e-'---+ r-
! i
I
"" r-.... ~ (/'-tl lt
I I'~ D I
'h. ............
-f-r I-
10 veE (V) 50 100
I
....... D-S"'~:::... - r-
"

Thermal transient response
DC current gain
G 10041
10 ......
10- '
•
6
4
10
I- 125'C-
I- 25'C
== t= -3O"C
-
I~r/
~
-......;:
V CE ,4V
10-3 LLL4Wl"llL...l2...Llillllll....-!-l-illl!ll----!--J..l.lJJ!ll----LJ..J..J~
10-5 10-1,
10
Collector-emitter saturation voltage
Collector-emitter. saturation voltage
VCE(sat )
(V)
G-4042
VCE(sat )
(V )
G 4043
I.S
hFE ,10
o
iT
[1;:= 2SA
1\ 20A ;....
ISA"'Io...
~
SA
O.S
o
30"C
2S'C
12S'C
L..::
1,/
rvy,
'8
,,-
10
374

VBE(s.t )
(V)
5
0,5
Base-emitter saturation voltage
hFE ~10
r
"1- -
7rT
I
I
D
/
- --- -
f---'"-
--
I-- ./
1--
v-
G 4044
:: -30'C
i-" ./ I- - 25'C
J......--" c--- 125'C
10-' 10 IC(A)
I
(tl
(",.)
Saturated switching characteristics
-;;--t-.......
j,.-1-1--
VCC~30V
hFE :10
TC .25'C
/'
:;7
ton
..... ~
G 4045
I---
I---
I---
f---
f---
10 Ie (Al
(tl
,,",sl
Saturated switching characteristics
..........
t--...
r--,.....
G 4046
VCC ~30V
f==
hFE ~10 f---
f---
Te ~125'C
f---
~
.
tun
~ ....
--
I---
....
......... tf
fT
(MHz)
20
10
Transition frequency
V
./ V
J...,..
-..........
~
I\.
VCE~15V
f:l0 MHz
I
G 4047
10-'
I
10 IC (Al
10-1
6 8
6 8
Ie (Al
375

Collector-base capacitance
f--~
G 1,048
Ie
(A)
Oamped reverse bias safe
operating area
""'I-...
f' .......
10
I
10
10 10'
0-1
See circuit
of fig.t
L125
10 10' VCE(clamp) (V)
Fig. 1 - Oamped EsA> test circuit
Fig. 2 - Switching times test circuit
(resistive load)
TEST CONDITIONS
7V", I-vss I ~ 2v
Ie/Is 010
t P :: adjusted for
nomina! Ie
RBB~ In
TEST CONDITIONS:
Vee: 30V
R _ Vce -VCE(s_t)
C - IC
I NPUT PULSE
pulse width :IO}.Js
trltf~ SOns
duty cycte =1 %
376

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 11 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case,
intended for use in switching and linear applications in military and industrial e-
quipment.
J
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage ( I E = 0)
Collector-emitter voltage (V BE=-1.5V)
COllector-emitter voltage (I B=O)
Emitter-base voltage (I c=O)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T casu:S25°C
Storage temperature
Junction temperature
250 V
250 V
200 V
7 V
20 A
25 A
4 A
150 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
Collector connected to case
TO-3
377
5/80

THERMAL DATA
f\h j-case Thermal resistance junction-case max 1.17 °C /W
ELECTRICAL CHARACTERISTICS(T case =25OCunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEO Collector cutoff V CE=160V 1.5 mA
current (I B=O)
IcEX Collector cutoff V cE=250V V Br-1.5V 1.5 mA
current V cE=250V V Br-1.5V 6 mA
T case=125°C
lEBO Emitter cutoff V EB=5V 1 mA
current ( I C = 0)
V CEO (sus) ·Collector-emltter Ic =200mA 200 V
sustaining voltage
VEBO Emitter-base IE =50mA 7 V
voltage
(lc=O)
VCE(sat) • Collector-emitter Ic =6A IB =0.6A 0.3 0.6 V
saturation voltage Ic =12A IB =1.5A 0.6 1.5 V
VBE(Sat) • Base-emitter Ic =12A IB =1.5A 1.3 1.5 V
saturation voltage
h FE • DC current gain Ic =6A V CE=2V 20 60 -
Ic =12A V cE=4V 10 -
Isib Second breakdown V cE=30V t =1s 5 A
collector current V CE=140V t =1s 0.15 A
fT Transition frequency Ic =1A V CE=15V 8 MHz
f =10MHz
378

ELECTRICAL CHARACTERISTICS(continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =12A I B1 =1.5A 0.3 1 ~s
(fig. 2)
V cc=150V
ts Storage time 1.2 1.8 ~s
(fig. 2)
Ic =12A I B1 =1.5A
t f Fall time
I B2 =-1.5A V cc=150V
0.24 0.4 ~s
(fig. 2)
Clamped Estb V c1am8=200V 12 A
Collector current L =5 O~H
(fig. 1)
* Pulsed: pulse duration =300 ~s, duty cycle :s; 2%
Ie
(A )
Safe operating areas
leM_¥_';ld~D
Ie MAX CONT
10
8
6f--f- DC OPERATION
,
PULSE OP~RATION*
"-
'"
fi- lms I~ f"
lOms
2
IIII \
8
6
,
• FOR 9NGLE NON
REPETITIVE fU SE
2
\\
\
, 6 B
10
\
lDfJs
G 4012
Derating curves
i -+- j --
+
I
f- ~ ~
~
'" I"-....~i)
f--
['.. ...... ..::::'("D
I"-....
['..
0.5 ""'i---..
,

Thermal transient response
DC current gain
F
G 4014
125°C
25°C
~- --
-- I\.
10 ~
--
I
-
VCE =4V
10-1 10 IC I A}
I
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCElsa t}
IV}
G 4015
VCEls,t
} hFF8
IV}
,
G 4016
1.5
l-
I
125°C-
25°C,
-30°C"
I\.2
IC= 18A
0.5
, I
'17
o
3
ISlA}
o
380

~ -~
Base-emitter saturation voltage
Saturated switching characteristics
VBE(sat )
(V)
1.5
III
1111
rl
1//
III
G 4011
8
hFE 8
6 VCE 1SOV
't---
15-
TC ~ 25·C
G 4018
I---
I---
I---
I---
j
1
r- t---
j..~
0.5
1
.....,
_ 10 ~ ~
I--
...- 25·C V
125·C
-
8
6
,
~ ~n V
2
"- o.!J ~
~
10 IC (A)
10
Ic (A)
Saturated switching characteristics
Transition frequency
( ~s)
G 4019
hFE-8
1==
'tE ~150V I---
Is r--. TC ~129'C
I---
........
fT
(MHz)
G -4011
2
e
6
Ion
, t:::::-
If
--~
I"-
i'-
~--I---
20
10
V
...... V
..........
V ""- r\ .
VCE~15V
f:10MHz
2
,
8 10 IC (A)
10-1
6 e
6 8
IC (A)
381

Collector-base capacitance
G-4020
Clamped reverse bias safe
operating area
G 4021
CCBO
(pF)
c
(A )
2
10 2
8
6
,
'" t--
"'I'-.
--
10 8
6
,
2
1 -
8
SEE TEST CIRCUIT OF FIG. 1
6
,~
2
10
2
, 6 8
10
i
L. 6 8 10 2
2
I I
10- 1 I
, 6 8 4 6 il 4 6 8
10 10' VCE (clamp) (V)
Fig. 1 - Oamped Esibtest circuit
SOV
Fig. 2 - Switching times test circuit
(resistive load)
TEST CONDITIONS:
7V;o l-vsB I .. 2V
Ic/IB=6
tp =adjusted for
nominal Ie
RSB'" I n
500 )JH
TEST CONDITIONS:
VCC =150'1
RC = VCC -VCE(sat)
IC
I NPUT PULSE
Pul.., width =10,us
tr rtf:S 50ns
duty cycle =1'/.
382

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 11 N is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case,
intended for use in switching and linear applications in military and industrial e­
quipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEX
V CEO
V EBO
Ic
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (tp= 10 ms)
Base current
Total power dissipation at T case::; 25 D C
Collector-base voltage (I E= 0)
ICM
IB
P tot
T stg Storage temperature
T j
J unction temperature
INTERNAL SCHEMATIC DIAGR:4 :
220 V
220 V
160 V
7 V
20 A
25 A
5 A
150 W
-65 to 200 DC
200 DC
MECHANICAL DATA
Dimensions in mm
383
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEO Collector cutoff V CE= 130V 1.5 rnA
current (I B= 0)
IcEX Collector cutoff Vcr 220V VBr-1.5V 1.5 rnA
current V CE=220V V Br-1.5V 6 rnA
T case= 125°C
lEBO Emitter cutoff V Es=5V 1 rnA
current (Ic= 0)
V CEO (SUS)* Collector-emitter I C =200mA 160 V
sustaining voltage L= 25 mH
VEBO Emitter-base IE =50mA 7 V
voltage
(I c=O)
V CE (sat) * Collector-emitter Ic =8A IB =0.8A 0.3 0.6 V
saturation voltage Ic =15A IB = 1.88A 0.6 1.5 V
V BE(sat) * Base-emitter Ic =15A IB =1.88A 1.4 1.8 V
saturation voltage
hFE* DC current gain Ic =8A Vcr2V 20 60 -
Ic =15A Vcr4V 10 -
Islb Second breakdown V cE=30V t= 1s 5 A
collector current Vcr 140V t= 1 s 0.15 A
fT Transition frequency V CE= 15V Ic =1A 8 MHz
f = 10MHz
384

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ie = 15A 181 = 1.88A 0.4 1.5 !lS
(fig. 2)
Vec=30V
ts Storage time 0.75 1.5 !lS
(fig. 2)
Ie =15A 181 =-1 82=1.88A
Vee=30V
t f Fall time
0.14 0.5 !lS
(fig. 2)
Clamped Eslb V Clamto 160V 15 A
Collector current L= 5 O!lH
(fig. 1)
* Pulsed: pulse duration = 300 !lS, duty cycle s 2%
Ie
(A )
10
Safe operating areas
Ie MAX PULSED
ICMAX CONT.
I III i'.. i\.
- De OPERATION ~
PULSED OPERATlON*
~
111111 \
FOR SINGLE NON
\
REPETITIVE PULSE
10
\ \
G-4070
10/JS
100/Js
_lms
lOms
0.5
Derating curves
I i I :
G 3665
i ~_L I "
I
I ! I
,
L
["'I: ~
ttl-- "'''-'%(/A1, , l" ~'rco
I •
I
Ii" '}-.... I +Ti~
, I 1'-.. """i--..
, I. , " o(\'-5h 'I-..J
I
-t t-
ft-
--+-+-+ l!+t+~b'V (~Fp.,.
I , N~)'~o-r--
r---f+- ~ T - c-I-- - t-ft~
50 100
385

Thermal transient response
DC current gain
G 4041
10
1"-
'l rl ~
f--I- 125' C~
f--I- 2S'C
f-- i= -30'C f---
VCE =4V
10
Collector-emitter saturation voltage
G 4050
VCE(sat )
(v)
Collector-emitter saturation voltage
veE (sat )
(V) f--. hFE=B
G 4051
\
1.5
r-- 12S'C -
2S'C -
f-- -30'C
ts=
1\'\
.'\
_\
'\
I
o
lOA
SA 'Il
K
= OA
1 A r-..
le(A)
0,5
o
I
T7.
I
JI
10
386

Base-emitter saturation voltage
Saturated switching characteristics
VBE(sal )
(v) hFE =10
1.5
I
U
I
/
G 4044
(I)
(1'5)
~ r- -t--
VCC=JOV
hFE =10
-
TC = 25·C -
G 40.1,5
I
I--
0.5
o
~
-./
----
'-----I-- -30·C
'--~ I-- 25·C
~
I-- 125·C
10
-
-
/'
./
ton
If ___
10-1
1 10 Ie (A)
Saturated switching characteristics
Transition frequency
VCC =30V
hFE =10
TC =125·C
G 4046
I
I--
I--
I--
fT
(MHz)
G 40.1,7
............ .........
r---
f--
I
~
Ion
.... ~ ..,.,
i-""""If
10 lC (A).
20
10
o
....... r'
~
10.1
i.o'
6 ,
.............
VeE =15V
1:10 MHz
I
I
I
'"
I\.
6 ,
Ie (A)
387

CC80
( pF)
Collector base capacitance
G 4046
C
A)
Clamped reverse bias
safe operating areas
G 4052
....... I
~ ,......
,
15
0
10'
--
r--t--
t---
1
~-
10
10 10'
0-'
see circuits of
of fig_ 1
10
'"
10' VCE(clamp) (V)
Fig. 1 - Clamped ES/b test circuit
Fig. 2 -
Switching times test circuit
(Resistive load)
SOV
TEST CONDITIONS:
7V,,"!-VBB!;o.2V
Ic/le =B
t P = adju~ted for
nomma! Ie
RBB' 1 n
TEST CONDITIONS:
VCC = 30V
R _ VCC -VCE(sat)
C - I C
I NPUT PULSE
pul ... width =10,us
trdf~ SOns
duty cycle =1-'.
S - 3692
RC
388

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 12 is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case,
intended for use in switching and linear applications in military and industrial e­
quipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
VCEX
V CEO
V EBO
Ic
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T caseS25°C
Collector-base voltage (I E = 0)
ICM
IB
P tot
T stg Storage temperature
T j Junction temperature
300 V
300 V
250 V
7 V
20 A
25 A
4 A
150 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DlAGR:~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
389
5/80

THERMAL DATA
~h j-case Thermal resistance junction-case max 1.17 °C/W
ELECTRI CAL CHARACTERISTICS (T case =25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
I CEO Collector cutoff V CE=200V 1.5 rnA
current (I s=O)
IcEX Collector cutoff V cE=300V V sr-1.5V 1.5 rnA
current
Tcase=125°C
V CE=300V V sE=-1.5V 6 rnA
IESO Emitter cutoff V Es=5V 1 rnA
current (I C = 0)
V CEO (sus) "'Collector-emitter Ic =200mA 250 V
sustaining voltage
VESO Emitter-base IE =50mA 7 V
voltage
(lc=O)
VCE(sat) '" Collector-em itter Ic =5A Is =0.5A 0.22 1 V
saturation voltage Ic =10A Is =1.25A 0.5 1.5 V
V SE(sat) '" Base-emitter Ic =10A Is =1.25A 1.231.5 V
saturation voltage
h FE ... DC current gain Ic =5A V CE=4V 20 60 -
Ic =10A V CE=4V 10 -
IsAo Second breakdown V cE=30V t =1s 5 A
collector current V CE=140V t =1s 0.15 A
fT Transition frequency Ic =1A V CE=15V 8 MHz
f =10MHz
390

•
.
•
ELECTR I CAL CHARACTER I STICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =10A I Bl =1.25A 0.28 1 !is
(fig. 2)
V cc=150V
ts Storage time 1.45 2 !is
(fig. 2)
Ic =10A I Bl =1.25A
t f Fall time
I B2 =-1.25A V cc=150V
0.23 0.5 !is
(fig. 2)
Clamped Esib V c,am8=250V 10 A
Collector current L =5 O!iH
(fig. 1)
• Pulsed: pulse duration =300 !is, duty cycle :s 2%
IC
(A)
B
s
B
,
10"
,•
4
2
10-'
Safe operating areas
'IC MAxPIJLSED
IC MAX CONT
DC OPERATION
FOR SINGLE NON
REPETITIVE PULSE
,
2 , ,. 2
PULSE OPERATION
" "
I
-
Ii
101'
rN.L m~O)JS
Oms
\
~
"
G -4022
, , . , 4 , B
10 10' 250 VCE (V)
0.5
Derating curves
j ! I
~-
I i I I
r-
! I
I
----;-~
i
""'I: N
i
i
"}...."~6(j, :
i ""-..i. ~/rco I
i
,
......
I
r-t
,
~ ! I
I
I
i
I .
" ....... 0"'0;; "'" I i~
G 3665
i-t
I
!
I ~{)+, .......
i ~;:t- ~
, . . : CO-r--
-+ I - :r-t I-r~f~~
50 100 150 Tease (etC)
391

Thermal transient response
DC current gain
~
G 4014
10
"
125'C
-30'C
'tE=4V
I
10-1 10 IC (A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
5
VeE(saI )
(V)
G 4015
VCE(sat
) hFF=8
(V)
G 4016
h
1.5
25'S-
125'C-
2S'C __
-30'C,-f'
o
1,\ 2
1\1\
3
Ie= 18A
Ie(A)
0.5
o
.,.
10
rJ
392

~
~
~
Base-emitter saturation voltage
Saturated switching characteristics
VBE(sat)
(V)
1.5
0.5
o
--
- "
~
_ 30 ~
...- 25"

eeBO
(pF)
Collector-base capacitance
6-4020
Ie
(A)
,
Oamped reverse bias
safe operating areas
G 4023
2
10 2
8
6
,
'" I' ~"""
-
10 8
6
,
2
8~
6
,
SEE TEST CIRCUIT OF FIG. I
2
2
2
10
, 6 8 ,
10
Vea (V)
1
, 6' , ,
10
? l. 68
10'VCE(Clamp) (V)
Fig. 1 - Clamped EsA:> test circuit
Fig. 2 - Switching times test circuit
(resistive load)
SOV
TEST CONDITIONS;
TEST CONDITIONS:
7V .. l-vaB I .. 2V
le/la=S
,tp ::adju.sted for
nominal Ie
RBB"IQ. '-'
VCC =lS0V
VCC -VCE(sat)
RC = Ie
INPUT PULSE
Pulse width = 10!'5
trdf:!, 50ns
duty cycle =1".
394

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 13 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
VCES
VCER
VCEO
V ESO
Ic
ICM
Is
Ptot
Tst9
Tj
Collector-emitter voltage (VSE = 0)
Collector-emitter voltage (RSE ~ 100n)
Collector-emitter voltage (Is = 0)
Base-emitter voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 10ms)
Base current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature
400
390
325
7
15
20
3
150
-65 to 200
200
v
V
V
V
A
A
A
W
°C
°C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
395
5/80

"
THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICES Collector cutoff VCE = 400V
current (VSE = 0) VCE = 400V Tease = 125°C
Min. Typ. Max. Unit
1.5 mA
6 mA
ICED Collector cutoff VCE = 260V
current (Is = 0)
IESO Emitter cutoff VES = 7V
current (Ic = 0)
1.5 mA
1 mA
VCEO {sustColiector-emitter
sustaining voltage
(Is = 0)
Ic = 100mA
325 V
VCE (sat)* Collector-emitter Ic = 4A Is = O.SA
saturation voltage Ic = SA Is = 1.6A
VSE (sat)* Base-emitter Ic = SA Is = 1.6A
saturation voltage
hFE * DC current gain Ic = 4A VCE = 4V
Ic = SA VCE = 4V
O.S V
1.5 V
1.5 V
15 60 -
S -
h Transition Ic = 1A VCE = 15V
frequency f = 10MHz
ton TU([J;.on time Ic = SA IS1 = 1.6A
Vcc = 150V
ts Storage time Ic = SA
tf Fall time
IS1 = -ls2 = 1.6A
Vcc = 150V
* Pulsed: pulse duration = 300JLs, duty cycle ~2%.
396
S
MHz
1.2 JLs
2.5 JLS
1 JLs

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 14 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications
ABSOLUTE MAXIMUM RATINGS
VCES
VCER
VCEO
VEBO
Ic
ICM
IB
Ptot
T519
Tj
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (RBE ~ 1 000)
Collector-emitter voltage (IB = 0)
Base-emitter voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 10ms)
Base current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC DIAGR:4 ,
450
440
400
7
10
15
2
150
-65 to 200
200
v
V
V
V
A
A
A
W
°C
°C
E
MECHANICAL DATA
Dimensions in mm
Collector CQllri8Cted to. caSe
397
5/80

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICES Collector cutoff VCE = 450V
current (VSE = 0) VCE = 450V Tease = 125°C
Min. Typ. Max. Unit
1.5 mA
6 mA
ICEO Collector cutoff VCE = 320V
current (Is = 0) .I
IESO Emitter cutoff YES = 7V
current (lc = 0)
1.5 mA
1 mA
VCEO (sus)*Collector-emitter
sustaining voltage
(Is = 0)
Ic = 100mA
400 V
VCE (sat) * Collector-em itter Ic = 3A Is = 0.6A
saturation voltage Ic = 6A Is = 1.2A
VSE (sat) * Base-emitter Ic = 6A Is = 1.2A
saturation voltage
hFE * DC current gain Ic = 3A VCE = 4V
Ic = 6A VCE = 4V
fr Transition Ic = 1A VCE = 15V
frequency
f = 10MHz
ton Turn-on time Ic = 6A lSI = 1.2A
Vcc = 150V
ts Storage time Ic = 6A lSI = -ls2 = 1.2A
t f
Fall time
Vcc = 150V
0.6 V
1.5 V
1.5 V
15 60 -
8 -
8 MHz
1.4 (..ts
3 (..tS
1.2 (..ts
* Pulsed: pulse duration = 300(..ts. duty cycle ~2%.
398

MULTI EPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 20 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEX
V CEO
V EBO
Ic
Collector-emitter voltage. (VBE = -1.5 V)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case s25 °C
Collector-base voltage (I E = 0)
ICM
IB
P tot
T stg Storage temperature
T j
Junction temperature
INTERNAL SCHEMATIC DIAGRA4 :
160 V
160 V
125 V
7 V
50 A
60 A
10 A
350 W
-65 to 200°C
200 ac
MECHANICAL DATA
Dimensions in mm
9 11.7
399
5/80

THERMAL DATA
F\h j-case Thermal resistance junction-case max 0.5 °C/W
ELECTRICAL CHARACTERISTICS(T case=25OCunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
I CEO Collector cutoff V CE=100V 3 mA
current (I B=O)
IcEX Collector cutoff V CE=1S0V V Br-1.5V 3 mA
current
T case=125°C
V CE=1S0V V Br-1.5V 12 mA
lEBO Emitter cutoff V EB=5V 1 mA
cu rrent (I C = 0)
V CEO (sus) ·Collector..;emitter Ic =200mA 125 V
sustaining voltage
VEBO
Emitter-base
voltage
(lc=O)
'E =50mA 7 V
VCE(sat) • Collector-emitter Ic =25A IB =2.5A 0.3 O.S V
saturation voltage 'c =50A IB =5A 0.55 1.2 V
VBE(Sat) • Base-emitter Ic =50A I B =5A 1.35 2 V
saturation voltage
hFE • DC current gain Ic =25A V cE=2V 20 SO -
Ic =50A V cE=4V 10 -
'sib Second breakdown V CE=40V t = 1s 1.5 A
collector current V CE=20V t =1s 17.5 A
fT Transition frequency V CE=15V I C =2A 8 MHz
f =10MHz
400

~
~-
I
~~--~
rr
ELECTRICAL CHARACTERISTICS(continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =SOA 161 =SA 0.4 1.S IlS
(fig. 2)
Vcc=60V
ts Storage time 0.8S 1.2 IlS
(fig. 2)
Ic =SOA 161 =SA
t f Fall time
I B2 =-SA V cc=60V
0.1 0.3 IlS
(fig. 2)
Clamped EsA> V clam8=12SV SO A
Collector current L =S OIlH
(fig. 1)
... Pulsed: pulse duration =300 IlS. duty cycle -::; 2%
Safe operating areas
Derating curves
PULSE OPERATION'
6 Ie MAX PULSED
10 ~s
4 ICMAX CONT '100 ~s
2
10
8= DC OPERATION
6
10-1
Ims
, 'I '\. ," 10ms
II
,
,
II !IIII \
2 • FOR SINGLE NON
REPETITIVE PULSE
8
6
,
2
\
I I
G 4194 G 3665
0.5
i
! I ! :
I
I
i
r-
I
!
I
I I~ I I i
~L.
, I
,
I
,
~ ~
-+~---L
~ 1-.....r...~() --- f-
I
I l'..~ri'o .[
, ....... t~f--~
~- '" i'... --l-c-~
2 , 68 2 , 68 2 , 68
10 102 125 so 100
l T"-, 0

Thermal transient response
DC current gain
G 3911
125'C
60
40
~
25'C
-3O'C
..........
r-.
r--. ...... r-.
1
20
10- 5 10- 4 10- 3 10- 2 10-1 Z'{secl
10
4 6 8
VCE =4V
I I
6 8 2 4 6 8
1 10 lC (Al
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(satl
(V l
c; 3912
VCE(sat l
(V l
hFE:lO
G 3913
1,5
~
1.5
SOA
Ie =70A
t--.
-30'C
25'C
125°C
l~
" ,
0,5
lOA
1'....
,30A
'I..
0,5
'" "
~
....-:
~~
~ j
8 'e (A l
, 8
10 [c(Al
402

Base-emitter saturation voltage
Saturated switching characteristics
VBE(sat )
(V)
f--- ~E=10 I
l.S
0-3914
8
(1'5 ) 6
,
.......
r--,...
G 3915
O,S
~.
-30:;"
::..-I-'
2S·C
12S·C
~
./
/
~
8 VCC 60V - -
~ I'--..
6 hFE -10 1-
Tease = 25'C
,
""
jo. ton -"'" V
2
r---... ~
l-- If
4 6'
1
, 6 8
10
, 6 8
'e (A)
8
10
5 8
'C(A)
Saturated switching characteristics
Transition frequency
t
8
(1'5)
6
,
Vee ~60V
2 hFE =10
Tease = 1250C
8
f"'o....
. t5 ,....,
G 3916
IT
(MHz )
20
./
t"-
1,..-
G 1,2 08
6
,
"-
I'
,...,
ton l/
10
VCE= 1SV
f=10MHz
2
-tf
6 8
6 ,
10 'c (A)
403

Ccso
(pF) 8
6
4
Collector-base capacitance
2
-
10'
8
2-+-·
10
-_.
..........
i II
6 B
10 2 G 3917
, 6 8
VCS (V)
, 6 B
,
Ic 8
(A) 8
,.
Clamped reverse bias
safe operating areas
2 c··~
10
I==-
:f::--=f::::
1
-
--r-
8 P=='5E:E TEST CIRCUIT OF FIG. 1
6
4r----
2
10-1
I
I 4 8 8
"
I I. e ,
10 10 2 VCE(clamp)(V)
:
G 3956
_.
Fig. 1 - Qamped Estb test circuit
Fig. 2 - Switching times test circuit
(resistive load)
TEST CONDiTIONS
7V"I~VBBI"2V
Ic/1B~10
tp ::adjusted for
nominal Ie
RSB ;.1.0
TEST CONDITIONS:
VCC 0 60 V
R _ VCC -VCE(sat)
C - IC
I NPUT PULSE
pulse width =10 fJs
tr Itf:S: SOns
duty cycle =1 °/0
404

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 21 is a silicon multiepitaxial planar NPN transistor in modified Jedec T0-3
metal case, intended for use in switching and linear applications in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEX
V CEO
VEBO
Ic
Collector-emitter voltage (VEB = ·1.5V)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case ::;25°C
Collector-base voltage (I E = 0)
ICM
IB
P tot
T stg Storage temperature
T j
Junction temperature
250- V
250 V
200 V
7 V
40 A
50 A
8 A
350 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~:~'
MECHANICAL DATA
E
Dimensions in mm
C()Hect()~ cqnhected tqcase
405
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 0.5 °C/W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEO Q)lIector cutoff V CE=160V 3 mA
current (I B=O)
IcEX Q)lIector cutoff V r.F=250V V Br-1.5V 3 mA
current
Tcase=125°C
V CE=250V V Br-1.5V 12 mA
lEBO Emitter cutoff V EB=5V 1 mA
current (I C = 0)
V CEO (sus) • Collector -em.itter Ic =200mA 200 V
sustaining voltage
V EBQ Emitter-base IE =50mA 7 V
voltage
(I C =0)
VCE(sat) • Q)lIector-emitter Ic =12A IB =1.2A 0.22 0.6 V
saturation voltage Ic =25A IB =3A 0.4 1.5 V
VBE(Sat) • Base-emitter Ic =25A IB =3A 1.2 1.5 V
saturation voltage
hFE • OCcurrent gain Ic =12 V CE=2V 20 60 -
Ic =25 V CE=4V 10 -
Isib Second breakdown V CE=140V t =1s 0.15 A
collector current V CE=20V t =1s 17.5 A
fT Transition frequency V CE=15V Ic =2 8 MHz
f =10MHz
406

~-.... .
ELECTRICAL CHARACTERISTICS(continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =25A I B1 =3A 0.24 1.2 I1S
(fig. 2)
V ce=100V
ts Storage time 1.3 1.8 I1S
(fig. 2)
Ie =25A I B1 =3A
t f Fall time
I B2 =-3A V ec=1 OOV
0.18 0.4 I1S
(fig. 2)
Clamped Es,b V clamo
=200V
Collector current L =5 OI1H
30 A
(fig. 1)
* Pulsed: pulse duration =300 I1S, duty cycle :5 2%
C
(A )
+
10
so
"
10
,
1
Safe operating areas
ICMAX PULSE
"
PULSE OPERATION'
IC MAX CONI .JllJ 1001-" I"" 0,""
1m.
DC OPERATION_I\
* FOR SINGLE NON
REPETITIVE PULSE
\
G 4024
\
10 10' zoo VCE (V)
"
0.5
Derating curves
'~ ~,
j IL
i !
~
I' r-..~ 'tE:D
,
'I-.. , ........
I ......... ......
, ,
I "D~0/Ol; ....... ,
G 3665
-+-l-I-
~D+ ....... ~
I
~,;;-f-
I ~
r -
.......
50 100 150 Tea •e ('C)
407

Thermal transient response
DC current gain
1
II!
i I. I ~ I
Tcase =125 C
G-l,025
..... ,1. .... 25'CI
~
~I;
V
-30 'C
'" 1,\
.........
~~
I
,
10
I
VCE =4V
I I
10 Ie (A)
VCE(s.t )
(V )
1.5
0.5
o
Collector-emitter saturation voltage
G -4157
lOA
5A"C
X
11 11
1\
,
K
IT l' 20A
25A
,.... ,....
15A
"
IC=30A
jo...j..,.
VCE(s.t )
(V J
i-----+- hFE= 8
0.8
O.S
0.4
0.2
o
Collector-emitter saturation voltage
"
Tease= -30 0
25'C /
/ II
125' -C -/
/
\ /
v
10-1 10
I
rT
G-4158
408

VSE(sa, )
(V)
1.S
Base-emitter saturation voltage
hFE·S
Tea se ::::125°C
25'C
-30'C
>, \ I
YI
A
'l
G-4159
,
Saturated switching characteristics
(1'5)
hFE-S
VCC =IOOV
f-----
t--
r-
-- TC .2S'C
0 r--.. r......
G-4160
- ....
10
0.5
o
"-
"I
...... r-- 'on
.... ""
10
'f
,
(1'5)
Saturated switching characteristics
G -4161
hFE .8
VCC dOOV
....... TC·12S'C
I"'....
~
"-
fT
(MHz )
20
Transition frequency
.....
L
G 4208
"- r-..
......... ..... 'on
... - r/
'f
10 IC (A)
10
o
16'
VCE = 15V
'=10MHz
• 8 • 8
Ie (A)
409

CCBO
(pF)
,
Collector-base capacitance
T
2
2
10 2
31--.
10
8
,
,
""- I'
I-..
, 6 8 , 68
10 10'
G -10162
I
,
, 6 8
VcFf.V)
Ie
(A)
30
8
6
,
1
10
8
6
,
2
8
,
Qamped reverse bias
safe operating are'as
'I-- SEE TEST CIRCUIT OFF[G.I
1
IIIIIIII II
10 -1 11111111 II
1 , 68 2 , '8
10
G 4063
, , 8
10' 100 VeE (V)
Fig.1 - Clamped Es/b test circuit
Fig. 2 -
Switching times test circuit
(resistive load)
50V
9
TEST CONOITIONS
7 V'" I-VBB I > 2v
[C/[B ~8
tp =adjusted for
nominal Ie
RBB~ln
~.500 f.'H
TE ST CONDITIONS:
VCC = IOOV
R _ VCC -VCE(sat)
C - Ie
INPUT PULSE
puI~ width = 5f15
tr Itf ~ SOns
duty cycle =1-'.
s- F 85
410

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 22 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS
VCSO Collector-base voltage (I E= 0)
VCEX Collector-emitter voltage (V sEF"" 1.5V)
V CEO Collector-emitter voltage (I s= 0)
V ESO Emitter-base voltage (I C= 0)
Ic Collector current
ICM Collector peak current (t p=1 0 ms)
Is Base current
P tot Total power dissipation at T case ::;25°C
T stg Storage temperature
T j Junction temperature
300 V
300 V
250 V
7 V
40 A
50 A
8 A
350 W
-65 to 200 OC
200°C
INTERNAL SCHEMATIC DlAGR:: ~~'
MECHANICAL DATA
E
Dimensions in mm
Coflectp(connected to case
411
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 0.5 °C/W
ELECTRICAL CHARACTERISTI CS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
I CEO Collector cutoff V CE=200V 3 mA
current (18=0)
IcEx Collector cutoff V cE=300V V Br-1.5V 3 mA
current T case=125 °C
V cE=300V V Br-1.5V 12 mA
lEBO Emitter cutoff V EB=5V 1 mA
current ( I C = 0)
V CEO (sus) ·Collector-emitter Ic =200mA 250 V
sustaining voltage
VEBO
Emitter-base
voltage
(lc=O)
IE =50mA 7 V
VCE (sat) • Collector-emitter Ic =10A IB =1A 0.2 1 V
saturation voltage Ic =20A IB =2.5A 0.321.5 V
V BE(sat) • Base-emitter Ic =20A IB =2.5A 1.1 1.5 V
saturation voltage
h FE • DC current gain Ic =10A V CE=4V 20 60 -
-
Ic =20A V CE=4V 10
Isth Second breakdown V cE=140V t = is 0.15 A
collector current V cE=20V t =1s 17.5 A
fT Transition frequency Ic =2A V CE=15V 10 MHz
f =10MHz
412

ELECTR I CAL CHARACTERISTI CS (continued)
Parameter Test conditions Min. Typ. Max.
tOil Turn-on time Ic =20A 181 =2.5A 0.221.3
(fig. 2)
Vcc=100V
ts Storage time 1.5 2
(fig. 2)
Ic =20A 181 =2.5A
t f Fall time
182 =-2.5A V cc=100V
0.17 0.5
(fig. 2)
Clamped Esib V clamo
=250V 25
Collector current L =5 OIiH
(fig. 1)
Unit
liS
liS
liS
A
• Pulsed: pulse duration =300 liS, duty cycle ~2%
I
C
(A)
10 2
50
'0
10
Safe operating areas
11,1 I 11111111
PULSE OPERATlON*
ICMAX PULSED
..
IcMAX CONT. it ~~I.,)
1001'S
DC OPERATIO N (/ 1\
-FOR !;INGlE NO
REPETITIVE P UL E
\
IO,us
G-4067
Derating curves
I
- - ---+---.
~:.-
r-~
i
I
-~ I , I I
j
~ ~' I
i":: r-....~(~
c---r !
f-- ---+--
r---.~'~D
c--
1
!
0.5
i I'. 'joo....
- ~-
i ........ (}s"'oq .......
_..
t-.... -
I
~-bi;
,
....... b".
! :'" '10
10 .1 I I I
I I i
"
10 o 50 100
I
"
r-....
G 3665
I
I
"
413

Thermal transient response
DC current gain
G 4025
v .....
V
,I 11111
Tcase=125°CI
25 0ci
"
-30°C
.........
.....-
i
I
VCE =4V
,
'" 1\
~ ~
I
I
10
I I
10 IC
VCE(satl
(V)
1.5
0.5
o
Collector-emitter saturation voltage
_\ 25A IC= 30A
I". 20A
I"'-
15A
lOA
5A~
I'I..J
G-4157
)
Collector-emitter saturation voltage
~ hFE= 8
0.8
0.6
0.4
0.2
-
I
i
Tcaseo= -30"
"-
2 5°C /
/ /'
125°C /
/
/
V
G 4158
o
10-1 10 IC (A)
I
414

VBE(sal )
(V)
o.S
1.S
o
Base-emitter saturation voltage
hFE= S ,
2S'C
llTlT
1'I1
I
-30'C
\ -,
)I'l-
Tease =125"C ~A
i"l
'-'
--
G 4159
.0 IC(A)
I
I
(1'5 )
Saturated switching characteristics
I'..
hFE=S
Vcc :'OOV
TC : 2S·C
~
r--.. r-....
1..1
1"--
Ion ,/
10
If
~
G -4160
I
(ps )
Saturated switching characteristics
-....
"""
'I-...
f';;
1"::
~ ~
Ion
+- !-- t:::..-
If
G - , 161
hFE :8
VCC :'OOV
TC: '2S'C
fT
(MHz )
20
10
Transition frequency
I---
- I"'-
J...-
./
VCE'1SV
f .. 10MHz
G 4206
1
'0 IC (A)
o
6 •
Ie (A)
415

10
Ccso
Collector-base capacitance
G -4162
IC
(A )
Clamped reverse bias safe
operating areas
G-4065
(pF )
4
,
3!--
10
8
10
8
G
,
1
6
4
,
,
"- I'
r-
468 4 68
10 10'
4 68
VcelV)
SEE TEST CIRCUIT OF FIG.I
:F
4
1
1 4 68 , , 6,
,
10- '
10 10
Fig. 1 - aamped Estbtest circuit
sov
Fig. 2 -
Switching times test circuit
(resistive load)
TEST CONDITIONS:
7 v ~ I-vee I ~ 2V
Ic/le =8
t P = adjusted for
nominal Ie
RB8~llt
TEST CONDITIONS:
Yee =IOOY
Yee -YeE(satl
Re = Ie
INPUT PULSE
puis.. width = 5J1S
tr,tf~ SOns
duty eyel .. =1 ",
!a-36!:.3
416

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 40 is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case,
intended for use in switching and linear applications in military and industrial e­
quipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEX
V CEO
V EBO
Ic
Collector-emitter voltage (V BE= -1.5V)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p= 10ms)
Base current
Total power dissipation at T case:S:25DC
Collector-base voltage (I E= 0)
ICM
IB
P tot
T stg Storage temperature
T j
Junction temperature
160 V
160 V
125 V
7 V
20 A
28 A
4 A
120 W
-65 to 200 DC
200 DC
INTERNAL SCHEMATIC DlAGR::_~r
E
MECHANICAL DATA
Dimensions in mm
Collector connected to case
26 rna;<
10.9
TO-3
417
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.46 °C/W
ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEO Collector. cutoff V CE=100V 1 mA
current (I s = 0)
IcEX Collector cutoff V CE=160V V sr-1.5V 1 mA
current T case= 12~C
V CE=160V V sr-1.5V 5 mA
IESO Emitter-cutoff V Es=5V 1 mA
current (I C= 0)
V CEO (sustColiector-emitter Ic =200mA 125 V
sustaining voltage
V ESO Emitter-base IE =50mA 7 V
voltage
(lc= 0)
V CE (sat) * Collector -em itter Ic =10A Is =1A 0.6 1.2 V
saturation voltage Ic =15A Is = 1.88 A 0.9 1.6 V
V SE (sat) * Base-emitter Ic =15A Is =1.88A 1.7 2 V
saturation voltage
hFE * DC current gain Ic =10A V CE=4V 15 45 -
Ic =15A V CE=4V 8 -
I sib Second breakdown V CE=30V t = 1 s 4 A
collector current V CE=50V t = 1 s 1 A
fT Transition frequency Ic =1A V cr15V 8 MHz
f=10MHz
* Pulsed: pulse duration = 300 IlS, duty cycle::; 2%.
418

ELECTRICAL CHARACTERISTICS(continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =15A I B1 =1.88A 0.35 1.2 ~s
(see fig. 2)
Vee=30V
ts Storage time
~s
(see fig. 2) Ie =15A I BI=-I B2 =1.88A. 0.85 1
t f Fall time Vec=30V
0.140.4 ~s
(see fig. 2)
Clamped ES/b
Collector current
(see fig. 1)
V eLAMP== 125V 15 A
L =500~H
Ie
(A)
2B
10
8
8
Safe operating areas
_1
10
i
G-3981
6
I I II
8 ====toCOPERATION I'
~ "'"
'~I I
,
2 FOR SINGLE NO N*
REPETITIVE PU LSE
i ~i
6
,
, , ,
I Ii I
2
I II It! I I
2 , 8 , 2 , 88 2 , 8 ,
0.5
Derating curves
,
r-:: ~
I
, Ie MAX PULSED PULSE OPERATION* ,_~H-
_lOps I
I,
2
" 100).lS;-:-1
ICMAX CONT I
lms i
I
lOms
I
++-
i --- -,,- ~J
f--. t---- .--
I
"- r-..... '% (/J I' ...... r--.,''tO
10 10 2 125 VeE (V) 50 100
I
i
i
_.
, r--.,
"- -:; ......
...... 'S~oq '-.......l
G 3665
"':V1' >rF ~
~I'S
'{- -
........
419

Thermal transient response
DC current gain
NR
10 8
~±±ttltllt:-
Zth=NR,Rth
,
G-393511 G 3982
hFE
ItE =4V
BO
~ 60
\\
40
'\
1¢'25'C
25'C ~
-30'C
20
: ti Hit =lf~_ ~
10-3 L-LLLillllL-'-l...LllillL-Llilllll1----1-Llilll"--LLllllliJ
2 ~ 6 8 2 '" 6 6 2 '" 6 8 2 4 6 8
10-5 10-4 10-3 10-2 10-' ~(se-c)
10
4 68 I, 68
4 68
10- 1 10 IC (A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat )
G 3963 G 3984
) hFE=B
(V) • IC I
5A
lOA
15A 1.5
II
20A
25A
v
1---
1'\
0.5
f-- 125'C
f-- -30"C
25'C
"'- I l
~ I I
~ "'- II
"-
V
./
V
/
o
10 Ie (A)
420

VSE(sat)
(V)
1,5
0,5
Base-emitter saturation voltage
I
,
IT
1/
"
~J IT
_.
,-.
'--
~
G l;191
7-
'.- .-
, I
7·
--
I- ..... . -30·e
25·e
125·e
--+ -
4 68 4 6 8 4 6 8
10-1 10 Ie (A)
Saturated switching characteristics
8 Vee- 30V
G 3986
~
6 hFE~ 8 e--
4
2
6
4
2
'"
i"'--
'I'--
1'-
f.---.-
l--l--
Tcase=2SoC e--
ts
./
ton
---t;'
10 Ie (A)
Saturated switching characteristics
G 3987
8 Vee :.lOV e--
e--
6 hFE~8 e--
Tease =125'C e---
4
2
8
6
4
2
l":
t-.....
~
ton ./
V
~
T
('1Hz )
20
10
Transition frequency
i.-"
J....- ............
./ l'..
Vee15 V
f =10MHz
G 4192
2
10 Ie (A)
10-'
6 •
Ie (A)
421

CCBO 8
(pF) 6
Collector-base capacitance
r--......
I"-
.--
G 3988
10
Clamped reverse bias safe
operating areaS
G 3969
!-t ra::. I-
mHf--=~]'~ mHut[++-::=1=-H=
q!--l--l-l-.!-J,.-H, -U--l--l-l-W-i-I-I­
,~-+~++j-l~-+.~~.{~~-
c
T Ii
I
,
10 '
1'. t--.I"-
--r-
_. -
,
,
10
10
III
4 6 8
10 ' VCB (V)
10
I i I
,
il
125
10' VCE(clamp) ( V)
Fig. 1 - Clamped Es/b test circuit
Fig. 2 - Switching times test circuit
(resistive load)
TEST CONDITIONS
71';;,I-V8B I;;,2V
Ic/lB ~S
t P :: adjusted for
nominal 1 C
Ras?>1 n
[~:e
IVBB
s- 369:
50V
~
~500 ,uH
~--I
@TU.T.,
1 I
,
,
i
~i
, Vcl amp
TEST CONDITIONS:
Vee = 30V
Vee -veE(sall
Re = Ie
INPUT PULSE
pulse width =10,...
t r' tf ~'\50ns
duty cyh~ =}./.
Re
422

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 41 is a silicon multiepitaxial planar N PN transistor in Jedec T0-3 metal case,
intended for use in switching and linear applications in military and industrial e­
quipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
VCEX
V CEO
V EBO
Ic
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B=O)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case~25°C
Collector-base voltage ( I E = 0)
ICM
IB
P tot
T stg Storage temperature
T j
Junction temperature
250 V
250 V
200 V
7 V
15 A
20 A
3 A
120 W
-65 to 200°C
200 OC
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
423
5/80

THERMAL DATA
f\h i-case Thermal resistance junction-case max 1.46 °C/W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
I CEO Collector cutoff V CE=160V 1 mA
current (I B=O)
IcEX Collector cutoff V CE=250V V BF-1.5V 1 mA
current T case=125 °C
V CE=250V V BF-1.5V 5 mA
lEBO Emitter cutoff V EB=5V 1 mA
current (I C = 0)
V CEO (sus) *Collector-emitter Ic =200mA 200 V
sustaining voltage
VEBO Emitter-base IE =50mA 7 V
voltage
( Ic=O)
VCE (sat) * Collector-emitter Ic =5A IB =0.5A 0.38 1.2 V
saturation voltage Ic =8A IB =1A 0.6 1.6 V
V BE(sat) * Base-emitter Ic =8A IB =1A 1.35 2 V
saturation voltage
h FE * DC current gain Ic =5A V CE=4V 15 45 -
Ic =8A V CE=4V 8 -
ISA:l Second breakdown V CE=30V t =1s 4 A
collector current V CE=135V t =1s 0.15 A
ft Transition frequency Ic =1A V CE=15V 8 MHz
f =10MHz
424

ELECTRICAL CHARACTERISTICS(continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =8A I B1 =1A 0.28 1 ~s
(fig. 2)
V cc=150V
ts Storage time 1.2 1.7 ~s
(fig. 2)
•
Ie =8A I B1 =1A
t f Fall time
I B2 =-1 A V cc=150V
0.250.8 ~s
(fig. 2)
Oamped Esib V clam8=200V 8 A
Collector current L =5 O~H
(fig. 1)
* Pulsed: pulse duration =300 ~s, duty cycle ,.:0;2%
I C
(A)
Safe operating areas
Ie MAX PULSED
Ie MAX CONT
10 8
6
,
1
8
5
,
I- PULSE
"
DC OPERATIOW
2 .. FCA SI\GLE ~
1 REPETITIVE PULSE
8
5
,
-2
Z
, 6 8
10
OPERATION' _
~
\
\..:
, 5 8
102
-tt
-,U~S
G 3934
lOC~s
lms
lOms
, 6 8
VCE (V)
Derating curves
I----I--
I
,
I
I
i
G 3665
~ I::-.. --- -
,
1': t--... 'st, (,
f'. ...... ~rOD
j ~ .............
0.5 "'- D .......
"'

Thermal transient response
DC current gain
G 3936
10 B
1 8
10- '
,
8
;:::
Zth=NR·Rth
IIi
II
I
i
s~
b -0.5
6 =0.3
6 =0.2
E =0.1
H-,
• =0.05
- ~.
5 =0
II I: 1111111 I
, , 68 , , , , ,
'" , , ,
10-5 10-' " (s~c)
i
8
6 --I---
I-.
I.
t--.
ii
/
2
i: I.
~
10
125'e
25'e t::c--- ---
8
30'e~ -1- -l-
._---
I- ----
1---- - --
2
I!
VeE ~4V 'i
--f-
If
10 I
, 6 8 6 8
10' Ie (A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
veE(""t )
(VI
I
I
/
\:,
, ~.
.,...,
L -j·lt
---'-Ie
2A
-,4A
-
I
- --;
6A
8A -
/
lOA
.-r- 12A
--- - -
/'4A
-r
+-
G 3937
18 (A)
G - 393
,
10- ' 1 10 Ie (A)
\E(sat I
I
(VI hFE =8
1.5
I
-----1 _'25'e
I
25'e
-
I
-30'e
I
""-.
0,5
~
~
, 68
:
426

VBE(sat)
(V)
1.5
0.5
Base-emitter saturation voltage
hFeB '_+\ --+ -H ~J
I
II
I
I
-II-
-I
f
--
- -- -
1
/.
i--"A
-30"e V ------1---
j..- /'
25"e
~;.-
125°C
I' i
i :11
I
1
G-3939
6 , 4 68
10 Ie (A)
Saturated switching characteristics
t
(1'5 ) 1--- -
1----
- f--
t----
, '-------
....... 1
Is -
2 c-::---""- -...... r--
hFE ~8
1 Tease_25°C
G -3940
I
~~-Y-
~-::
-- --
8- e---- ~t::
5 __
---
I
--
1-----
=t=-
!
~ -+ I~;;--
-, If
10
b:::;::::
I
I I I-r--
I
- i""
?
~
ie(A)
Saturated switching characteristics
Transition frequency
t
(I's )r-
--I--
- -
--
G 3941
--I-- - -t---
Vee 0: 150 V ts
r--
hFE ~ 8 I
.........
Tease= 125°C -I-r--
20
veE ~ 15V
h10MHz
",... ........
./ '\
G 39"5
I
I
i.--"
"-.ton /. -....... ~
~ "",6:::::=== :;:::::'-f-"" I
t f
1
: I
10
i
1\ !
5 6
'0 -- Ie (A)
1
427

Ccoo
(pF )
t.
Collector-base capacitance
..............
,
~
G -3942
Qamped reverse bias
safe operating area G-3943
(A)t
Ic~~~"~~~~~~~~~~~11
10
,
t,
.........
r--
10
2
b :1 10.'
Vcs(V)
S£I'£I' circuit
10" L:::0~f ..:f~ig!:... ~I _llU_-L-L.LLill1L-::---'---L..LI..ll.UI
10
J()'VCE (clamp) (V)
Fig. 1 - Qamped EsA> test circuit
Fig. 2 -
Switching times test circuit
(resistive load)
Ic/lS =8
TEST CONDITIONS:
7 v;. I-vss I ~ 2V
tp =adjusted 10r
nominal Ie
Rss"n
TEST CONDITIONS:
Vee =150'/
Vee -VeE(sat)
Re = Ie
INPUT PULSE
Pulse width =10 iJS
t"tl ~ 50ns
duty cycle =1·/.
428

MUlTIEPITAXIAl PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 41 N is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case
intended for use in switching and linear applications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
VCEX
V CEO
V EBO
Ic
ICM
IB
Ptot
Tst9
T j
Collector-base voltage (I E=O)
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B=O)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T cases25°C
Storage temperature
Junction temperature
220 V
220 V
160 V
7 V
18 A
25 A
3.6 A
120 W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
Collector connected to case
429
5/80

THERMAL DATA
~h j-case Thermal resistance junction-case max 1 .46 °C /W
ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICED Collector cutoff V CE=130V 1 mA
current (I s=O)
ICEX Collector cutoff ~ V CE=220V V sr-1.5V 1 mA
current
T1Oase=125OC
V CE=220V Vsr-1.5V 5 mA
IESO Emitter cutoff V Es=5V 1 mA
current (I C =0)
V CEO (sus) "'Collector-emitter Ic =200mA 160 V
sustaining voltage
VESO Emitter-base IE =50mA 7 V
voltage (I c= 0)
VCE (sat) '" Collector-emitter Ic =8A Is =0.8A 0.5 1.2 V
saturation voltage Ic =12A Is =1.5A 0.751.6 V
V SE(sat) '" Base-emitter Ic =12A Is =1.5A 1.5 2 V
saturation voltage
h FE '" DCcurrent gain Ic =8A V CE=4V 15 45 -
Ic =12A V CE=4V 8 -
-
Isth Second breakdown V cE=30V t =1s 4 A
collector current V CE=100V t = 1s 0.27 A
fT Transition Ic =1A V CE=15V 8 MHz
frequency f =10MHz
430

ELECTRICAL CHARACTERISTICS(continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time I c =12A 181 =1.5A 0.35 1.3 I1S
(fig. 2)
Vcc=30V
ts Storage time 0.85 1.5 I1S
(fig. 2) I C =12A
tl Fall time
181=-1 BF1.5A
(fig. 2)
V cc=30V 0.14 0.8 I1S
Oamped EsA> V CLAMp==160V 12 A
Collector current L = 50011 H
(fig. 1)
... Pulsed: pulse duration =300 I1S, duty cycle ~2%
,
Safe operating areas
Ie
6
(A)
,
25
, Ie MAX PU.SED PULSE
1B
10
/' ICMAXC~T.
.
,
DC OPERATION
:-
, I II III
FOR SINGlE NON
REPETITIVE PULSE
.
6
4
,
".
10- ' , 4 6 •
,
10
RAT ION"
10".
- 100" •
1m.
10m.
,
\"
6 , 2 4 6 ,
Derating curves
G 3990 G 3665
.~ ~
.......-: ....... ~{
......... ~lfo
............
0.5 "- ......
.......4s~ ............
~~ ...... ......
~%
I"{- - .......
10' 160 'icE (V) o 50 100 150 Tease ('C)
431

Thermal transient response
DC current gain
G 393511
G 3991
,0 8
Zth,NR·Rth
60
12S'C
2S'C
-30'C
10-1
8
6
~
6,0.S
;; ,0.3
;; _0.2
~ S, 'l:
- rr=
5,0.1
• =O.oS
h=O
:
§'
III
-if
I [Ilfnll
2 468 2 468 2 468 2 .I, 68 2 468
10-5 10~4 10-3 10-2 10-' ~ (."C)
40
20
"-
~
\
'tE :J.V
10
6 8 , 68 , 68
10- ' 10 IC (Al
VCE(sat )
(V)
Collector-emitter saturation voltage
G -, 39!J.2
Collector-emitter saturation voltage
G-3993
VCE(sat
) hFE =8
(V)
f-
---
IC
I---- SA
lOA
ISA
lOA
4 Ie (Al
1.S
0.5
o
f----I- 12S'C
2S'C
- I- -30'C
10- 1
, 68
=:--"
"-
"'"
/
",-
/
.....
I
'I
'Y
1/
, 68 4 6 8
10 IC (A)
432

Base-emitter saturation voltage
Saturated switching characteristics
VBE(sal)
(V)
1,5
r---
11/
11/
11/
fII
"
G 42) 9
I
(I's)
6
,
2
~
Go 3986
Vec= 30V
hFE'= 8
I
Tcase=25~C I
0,5
o
--
'-
~
~A
7
-30'C
25 ·C
125 ·C
, 6' , 6, , 6'
10" 10 IC (A)
,
I--
r-..... r-.... ..... 1---
....-
-
Is
./
ton
--t;'"
10 IC (A)
Saturated switching characteristics
Transition frequency
(I's)
, '-....
........
........
G-3987
Vec =lOV -
~E=B
==
Tease =125-C -
~
'IT
(MHz)
(V)
20
.....
, ...........
"-
G· 41'92
Ion ./
/'
~
..
1
10 It (A)
10
o
.- ..
, .
VCE=15 V
I =10MHz
• •
IC(A)
433

Collector-base capacitance
eceo •
(pF) ,
10'
I""'--..
~ t--.""
G 3968
Ie
(A)
Clamped reverse bias safe
operating areas
G-399S
1211l1li __
10 ,
,f--
Ii
SEE TEST eIReu~!, OF. FIG.l
10
4 , • 4 ,.
10 10'
4 ,.
Vee (V)
Ii
10- '
i III
4 , ,
4 "8 2 4 15 B
10 10' 160 "cE(c1amp) (V )
Rg. 1 - Clamped Esib test circuit
Rg. 2 -
Switching times test circuit
(resistive load)
TEST CONOITIONS:
7V .. I-vaa I ;. 2V
IC / I a =8
tpJl
50V
~
500 )JH
TEST CONDITIONS:
Vee = JOV
R _ Vee -VCE(ut)
e - Ie
Re
t P = adjusted for
nominal Ie
RaB'ln
INPUT PULSE
pul"" width =10 I'"
tr.tf ~ 50ns
duty cycle =1·'.
!t-319Z
434

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 42 is a silicon multiepitaxial planar N PN transistor in Jedec T0-3 metal case,
intended for use in switching and linear applications in military and in9ustrial e­
quipment.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage ( I E = 0)
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B=O)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case:525°C
Storage temperature
Junction temperature
300 V
300 V
250 V
7 V
12 A
15 A
2.4 A
120 W
-65 to 200 OC
200°C
INTERNAL SCHEMATIC DIAGR~4
MECHANICAL DATA
Dimensions in mm
435
5/80

THERMAL DATA
F\h j-case Thermal resistance junction-case max 1 .46 °C /W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
I CEO Collector cutoff V cE=200V 1 mA
current (I B=O)
IcEX Collector cutoff V cE=300V V Br-1.5V 1 mA
current
T case=125°C
V cE=300V V Br-1.5V 5 mA
lEBO Emitter cutoff V EB=5V 1 mA
current (I C = 0)
V CEO (sus) ·Collector-emitter Ic =200mA 250 V
sustaining voltage
VEBO Emitter-base 'E =50mA 7 V
voltage
(I C = 0)
VCE(sat) • Collector-emitter Ic =4A 'B
saturation voltage 'c =6A 'B
VBE(Sat) • Base-emitter Ic =6A 'B
saturation voltage
=0.4A 0.331.2 V
=0.75A 0.451.6 V
=0.75A 1.23 2 V
h FE • DC current gain Ic =4A V CE=4V 15 45 -
Ic =6A V CE=4V 8 -
'sA> Second breakdown V CE=135V t =1s 0.15 A
collector current V CE=30V t =1s 4 A
fT Transition frequency Ic =1A V CE=15V 8 MHz
f =10MHz
436

ELECTRICAL CHARACTERISTICS(continued)
Parameter Test conditions Min. Typ. Max. Unit
ton Turn-on time Ic =6A I B1 =0.75A 0.23 1 IlS
(fig. 2)
V cc=150V
ts Storage time 1.5 2 IlS
(fig. 2)
Ic =6A I B1 =0.75A
I B2 =-0.75A V cc=150V
t f Fall time
0.2 1.2 Ils
(fig. 2)
Clamped Esib V clam8=250V 6 A
Collector current L =5 OIlH
(fig. 1)
'" Pulsed: pulse duration =300 IlS, duty cycle =2%
Safe operating areas
G-3944
Derating curves
G 3665
10,
6
,
·1 8
6
"
*~~~.~INGLE N ,N...
PI
'I>, InN
OI'S
IOOs
\
,,\
~
6 68 6 6 ,
6 68
10
10' VeE (V)
1""11::: ~
1-- --
, I
r-..: 1'-.. %

1
Thermal transient response
10. 8
_. Zth=NR·Rth
6
,
2
•
6
,
I
2
lO-1
, & =0..3
" -0.2
1 • =0..1
i
10-2
I .s =0.05
• 6
6=0.
• 6 =0..5
6
Fe
M
.=
'e=- + j-i-
2
3
III II I1lill 1
G 3935/1
DC current gain
~~~~~~li~~~i;~!IIl~ __
hFE :
-G--3r9'361
jo...
2~-+-+~~~-~//-+~~~--+-4
125~C 1/ /
8
10 ~~~§!2i5'aC~~~~il~tf--~
30'C
6
2 ~ 6!1 1 4 I; 8 2 4 6 8 2 4 68 2 4 6 8
6 8 6 8
10-5 10--'< 10-3 10-2 10-1 "t (Se-C) 10
Collector-emitter saturation voltage
VCEI,.t)
t)
IV) 1HI+II-t1t--+-+-t-+ y--t-t-+-t-t---t--t--t---H
hFE =8
_~_' Ll
II-+ft--IIf-I.lll-+--,---+-r---HH' IC 5
2A t-
V, t- 4A
6A
8A
/ - 10.A
12A
V 14A
Collector-emitter saturation voltage
G -3938
I--f- 125'C 7
I-- -30'C 25'C
'/
I
0, 5
~~
~
, 6 8 , 68
1 10 Ie (A)
438

VBE(sat )
(V)
1.5
0.5
o
Base-emitter saturation voltage
hFE=8
---
-30·C
,......- ......
........ ./
2S"C
-=-j:.-
12S·C
fJ
G-39J9
, 6 8 , 6 8
I 10 IC (A)
Saturated switching characteristics
t
(flS )- -
1
- 1.-
'tC =150 V
r-- - -
hFE =8
Tcase=25°C
r-
-
G 3940
..... r--r-.
........ -::::: ~ ~ ....
~ ton ~ F-
tt'
-
t
(flS)
Saturated switching characteristics
---
Vee =150 v Is t-- r-
hFE =8
Tcase=12S'C
G 3941
r-..... r-.
......
~on .......- -.... ......
~ .... b::== :;:::::..-
f
IT
(MHz)
20
10
Transition frequency
veE =ISV
f=10MHz
./ ......
./ '\.
"\
G 3945
6
Xl -1
6 8 6 8
Ie (A)
439

Ccso
(pF )
Collector-base capacitance
G-l942
IC
(A )
Clamped reverse bias
safe operating areas
G 3946
4
I
2
8
5
,
...........
........
I
-
10
f--
SEE TEST CIRCUIT OF FIG. 1
I
10
2
Vcs(V)
1
II11111I
111I1
1111111 Jill
10
I
Fig. 1 - Clamped Esib test circuit
TEST CONDITIONS:
7V" I-vss I", 2V
Ic/l s=8
tp=adjusted for
nominal 1 C
RSS'IIl.
tpn
50V
500 }JH
Vctamp
Fig. 2 -Switching times test circuit
(resistive load)
TEST CONDITIONS:
Vee =150V
Vee -VeE(sat)
Re = Ie
INPUT PULSE
Pulse width =10 j..s
t r' tf":S 50ns
duty cycle =,-,.
440

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 43 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
VCES Collector-emitter voltage (VBE = 0) 400 V
VCER Collector-emitter voltage (RBE ~ 1000) 360 V
VCEO Collector-emitter voltage (IB = 0) 325 V
VEBO Emitter-base voltage (Ic = 0) 7 V
Ic Collector current 10 A
ICM Collector peak current (tp ~ 10ms) 12 A
IB Base current 2 A
Ptot Total power dissipation at Tease ~25°C 120 W
Tstg Storage temperature -65 to 200 °C
T j Junction temperature 200 °C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-3
441 5/80

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.46 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICES Collector cutoff VCE = 400V
current (VSE = 0) VCE = 400V Tease = 125°C
ICEO Collector cutoff VCE = 260V
current (Is = 0)
---
IESO Emitter cutoff VES = 7V
current (Ic = 0)
Min. Typ. Max. Unit
1 mA
5 mA
1 mA
1 mA
V CEO (sus)*Collector-emitter
sustaining voltage
(Is = 0)
Ic = 100mA
325 V
VCE (sat) * Collector-emitter Ic = 3A Is = 0_375A
saturation voltage Ic = 5A ·Is = 1A
VSE (sat) * Base-emitter Ic = 5A Is = 1A
saturation voltage
hFE * DC current gain Ic = 3A VCE = 4V
Ic = 5A VCE = 4V
fT Transition Ic = 1A VCE = 15V
frequency
f = 10MHz
ton Turn-on time Ic = 5A IS1 = 1A
Vcc = 150V
ts Storage time Ic = 5A IS1 = -ls2 = 1A
tf
Fall time
Vcc = 150V
1 V
1.6 V
2 V
15 60 -
8 -
8 MHz
1 /LS
2.2 /LS
1.2 /Ls
* Pulsed: pulse duration = 300/Ls, duty cycle :;;;2%.
442

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 44 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
VCES Collector-emitter voltage (V6E = 0)
VCER Collector-emitter voltage (R 6E :::; 1000)
VCEO Collector-emitter voltage (16 = 0)
V E60 Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (tp :::; 10ms)
16 Base current
P tot Total power dissipation at Tease :::;25°C
T stg Storage temperature
T j Junction temperature
450
440
400
7
8
10
1.6
120
-65 to 200
200
v
V
V
V
A
A
A
W
°C
°C
INTERNAL SCHEMATIC DIAGRA:~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
443
5/80

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.46 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICES Collector cutoff VCE = 450V
current (VBE = 0) VCE = 450V Tease = 125°C
Min. Typ. Max. Unit
1 mA
5 mA
IcEO Collector cutoff VCE = 320V
current (IB = 0)
lEBO Emitter cutoff VEB = 7V
current (Ic = 0)
1 mA
1 mA
VCEO (sus) 'Collector-emitter
sustaining voltage
(IB= 0)
Ic = 100mA
400 V
VCE (sat)
. Collector-emitter Ic = 2A IB = 0.25A
saturation voltage Ic = 4A IB = 0.8A
VBE (sat)
. Base-emitter Ic = 4A IB = 0.8A
saturation voltage
.
hFE DC current gain Ic = 2A VCE = 4V
Ic = 4A VCE = 4V
fT Transition Ic = 1A VCE = 15V
frequency
f = 10MHz
ton Turn-on time Ic = 4A 18 = 0.8A
Vcc = 150V
ts Storage time Ic= 4A IB1 = -182 = 0.8A
Vcc = 150V
tl Fall time
1 V
2 V
2 V
15 45 -
8 -
8 MHz
1 p.s
2.5 p.s
1.2 p.s
• Pulsed: pulse duration = 300p.s, duty cycle :::::2%.
444

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 46 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
VCES
VCER
VCEO
V EBO
Ic
IB
P tot
T stg
Tj
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (RBE ~ 100)
collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Base cu rrent
Total power dissipation at Tease ~ 25°C
Storage temperature
Junction temperature
850
850
400
7
5
3
85
-65 to 175
175
v
V
V
V
A
A
W
°C
°C
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
Collector connected to case
iO-3
445
5/80

THERMAL DATA
Rthj-eaSe Thermal resistance junction-case max 1.75 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICES Collector cutoff VCE = 850V
current (VBE = 0) VCE = 850V Tease = 125°C
ICER Collector cutoff VCE = 850V
current (RBE :::::;100) VCE = 850V Tease = 125°C
Min. Typ. Max. Unit
100 f,LA
1 mA
300 f,LA
2 mA
lEBO Emitter cutoff VEB = 7V
current (Ic = 0)
1 mA
VCEO (sustColiector-emitter
sustaining voltage
(IB = 0)
Ic = 100mA
400 V
VCE (sat) * Collector-em itter Ic = 2.5A IB = 0.5A
saturation voltage Ic = 3.5A IB = 0.7A
VBE (sat)* Base-emitter Ic = 2.5A IB = 0.5A
saturation voltage
1.5 V
5 V
1.3 V
ton
Turn-on time
1 f,Ls
ts
t f
Storage time
Fall time
Ic = 2.5A Vcc = 150V
IB1 = -IB2 = 0.5A
3 f,Ls
0.8 f,Ls
* Pulsed: pulse duration = 300f,Ls, duty cycle :::::;2%.
446

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 47 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
VCES
VCER
VCEO
VEBO
Ic
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (RBE ~ 1 all)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 1 Oms)
Base current
Base peak cu rrent (tp ~ 10 ms )
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature
850
850
400
7
8.5.
12
3
6
107
-65 to 175
175
v
V
V
V
A
A
A
A
W
°C
°C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
Collect()r. connected to!)_
447
5/80
l
I ! ~
1
i1
11

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.4 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICES Collector cutoff VCE = 850V
current (VBE = 0) VCE = 850V Tease = 125°C
Min. Typ. Max. Unit
150 JLA
1.5 rnA
ICER Collector cutoff VCE = 850V
current (RBE ':::;100) VCE = 850V Tease = 125°C
lEBO Emitter cutoff VEB = 7V
current (Ic = 0)
400 JLA
3 rnA
1 rnA
VCEO (sustColiector-emitter
sustaining voltage
(IB = 0)
Ic = 100mA
400 V
VCE (sat)* Collector-em itter Ic = 6A IB = 1.2A
saturation voltage Ic = 9A IB = 3A
VBE (sat)* Base.-emitter Ic = 6A IB = 1.2A
saturation voltage
1.5 V
3 V
1.6 V
ton
Turn-on time
1 JLS
ts
tf
Storage time
Fall time
Ic= 6A Vcc = 150V
IB1 = -IB2 = 1.2A
3 JLS
0.8 JLs
* Pulsed: pulse duration = 300JLs. duty cycle .:::;2%.
448

MULTIEPITAXIAL MESA NPN
VERY HIGH VOLTAGE POWER SWITCH
The BUX48 series are multiepitaxial mesa NPN transistors in a Jedec TO-3 metal case,
particularly intended for switching and industrial applications from single and three-phase
mai ns operation.
ABSOLUTE MAXIMUM RATINGS
V CES
VCER
VCEO
V EBO
Ic
ICM
Icp
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (R BE = 10n)
Collector-emitter voltage (I B = 0)
Emitter--base voltage (lc = 0)
Collector current
Collector peak current (tp ~ 5ms)
Collector peak current non repetitive
(tp ~ 20 ps)
Base current
Base peak current (t p ~ 5ms)
Total power dissipatIOn at T case ~ 25°C
Storage temperature
Junction temperature
BUX48
850V
850V
400V
BUX48A BUX48B BUX48C
1000V
1000V
450V
7V
15A
30A
1000V
1000V
600V
55A
4A
20A
175W
-65 to 200°C
200°C
1000V
1000V
700V
INTERNAL SCHEMATIC DIAGRAM
,~'
E
MECHANICAL DATA
Dimensions in mm
Collector connecteoto case
449
10/82

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEs Collector cutoff for BUX48 and BUX48A
current (V BE = 0) VCE = V CES 200 p.A
Tease = 125°C
VCE=VCES 2 mA
for BUX48B and BUX48C
VCE=VCES 500 p.A
Tease = 125°C
VCE = V CES 3 mA
ICER Collector cutoff VCE=VCES 500 p.A
current (R BE = 1 On.) Tease = 125°C
VCE = V CES 4 mA
IcEo Collector cutoff for BUX48B
current (I B == 0) VCE = V CEO 1 mA
for BUX48C
VCE = V CEO 1 mA
lEBO Emitter cutoff V EB = 5V 1 mA
current (I C = 0)
V CEo(susi Collector-emitter for BUX48 Ic = 200mA 400 V
sustaining voltage for BUX48A Ic = 200mA 450 V
for BUX48B Ic = 100mA 600 V
for BUX48C Ic = 100mA 700 V
V CER (susi Collector-emitter for BUX48B and BUX48C
sustaining voltage L=2mH VClamp = 1000V
(R BE = 1 On. ) Ic = 0.5A 1000 V
450

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
VeE(Sat) * Collector-emitter for BUX48
saturation voltage Ie = lOA IB = 2A 1.5 V
Ie = 15A IB = 3A 5 V
for BUX48A
Ie = SA IB = 1.6A 1.5 V
Ie = 12A IB=2.4A 5 V
for BUX48B and BUX48C
Ie =6A IB = 1.5A 1.5 V
Ie = SA IB = 2.5A 2 V
Ie = lOA IB =4A 3 V
V BE(sat) * Base-emitter
for BUX48
saturation voltage Ie = lOA IB =2A 1.6 V
for BUX48A
le=SA I B =1.6A
1.6 V
for BUX48B and BUX48C
Ie = 6A IB = 1.5A 1.6 V
Ie = lOA IB =4A 2 V
ton Turn-on time for BUX48
(resistive load)
Vee = 150V Ie = lOA
IBI = -IB2 = 2A 1
for BUX48A
/ls
Vee = 150V Ie =SA
IBI = -IB2 = 1.6A 1
for BUX48B and BUX48C
/lS
Vee = 250V Ie =6A
IBI = -IB2 = 1.5A 0.500 1 /ls
ts Storage ti me for BUX48
(resistive load)
Vee = 150V Ie = lOA
IBI = -IB2 = 2A 3
for BUX48A
/lS
Vee = 150V Ie = SA
IBI = -IB2 = 1.6A
for BUX48B and BUX48C
3 /ls
Vee = 250V Ie =6A
IBI = -IB2 = 1.5A 1.5 3 /ls
t f Fall time for BUX48
(resistive load)
Vee = 150V Ie = lOA
IBI = -IB2 = 2A O.S /ls
for BUX48A
Vee = 150V Ie = SA
IBI = -IB2 = 1.6A O.S /ls
for BUX48B and BUX48C
Vee = 250V Ie =6A
IBI = -IB2 = 1.5A 0.200 O.S /lS
* Pulsed: pulse duration = 300 /ls, duty cyle -1.5%.
451

Safe operating areas
I - Area of permissible ope·
ration during turn·-on provided
RSE < 100n and
tp < 0.25 tls
'c
(A)
4
10 8
5
'C~ PULS.
'CMAX CONT.
: ~
--+--+-I-H- 4---
4~- J-
DC OPERATION
2 c------j---++ 'l1W
; !, !I::
-
BF
,
~-:-=t
6t== +-:-::-t:-~:
4 f----t-+~ .
*PULSE DURATION
~
!"I
:f----
4
2
2
10
! I II
I I;i !I
;
I
I
~.
--
1\
\
"'
-.l
~
I i'lri~i\.
~!"TI
2 FOR STNGLE NON-)f
-1 REPSTITIVE PULSE
10
-+-
BUX48-+-
BUX48A +-
I II :111
(I
I
4 6 8 4 6 8 2 2 4 6
10 10
!
I
Ii i
8
G-4797/1
10}Js
100 }Js
lms
10ms
--+
I I I
! :1
i.
i: )11
I
2 4 6 e
VCE (V)
Safe operati ng areas
I - Area of permissible operation
during turn-on pro·
vided RSE < 100n and
tp < 0,25 tls
'C
r----j-
*PULSE DURATION
(A)
, 'C ~_~ PULS. -
'CMAX CONT.
. I
10
8
6
4 r=--+-~
DC OPERATION ,
2
B
,_-+-__..0-
6t----
c-+
4
r--
,
tmr
, i! I
",,-L
'"
~
" "
\
L II ~ I
\
1 '---roif- SCNtLE N0f".!~
1 I REPETITIVE PULSE i\.
10
B
5
4
I-- ---
2f---
\
K'
!'r
I
.1·, 11 BUX48B "
, i II I BUX48C RS
2
Ii I 1111111
10
4 6 B
10
4 6 B 2 2
10
I
,
10}Js
100,..,s
lms
10ms
I
6 8
VCE (V)
452

Clamped reverse bias safe operating
areas
G- 4199
IC ~::-:f-_ ..- 00-- --
(A):-::::jC
__ j
, 11 ~ +DR---+-+++++t11
2 >--_-+---+++-Hi e-4.-
, ,
'-+ ;' __ . .. ---+
'1: 1~li_~!1 ~I
- --i--o
VCE(sat
(V)
)
Collector-emitter saturation voltage
Tcase -12S'C _____
-;~: g-----
hFE- S
t--
J-,
G "819
J
II
-,
10
i !
, ,. 2
BUX4S'::'"
BUX46Afr
BUX46B
BUX48C
2 , ,.
: i
10 10 10' VcE(cIamp)M
2
!
o.S
o
-,
10
)
1/ j
./ ~
IC (Al
VCE(sat
(V)
o
Collector-emitter saturation voltage
G 4820
) I I
I I
IC :lA
1\ V V 2A-t-
~!-l-
I..t v
I\,- J V v V
V \V V V
1.---1/ l\ V vV
V1 '" vA- :,.-'"
l\~v ~ V V' j.-'
I\,
:;...- 6A
VBE(sat )
o_S
t-'
o
Base-emitter saturation voltage
f-----
1---
I--
-,
10
I
I
Tcase=-~~:~
12S·C
SA-l-
6A
7A-I-
,...-
\ 1\ I\, "-
l\. l'o. I' t-...
1\ ,.... !'-. I't---.....
\I\. "-
l.-I-
,\ 1.1
\\ V
I\:v ~
\\ I---':
-\,..V
.....
hFE=5
G ~S21
453

DC current gain
G 4622
Saturated switching characteristics
G I, 823
10
r-- .....
~
f-- r- r" ~~
-
IS
'--
Ion
-
-
TCa$e= 1~~ ·C
·Ct--'./'
-30·C
VCE =5V
I . ,
16' Ic (A)
-,
10 ,
=
'1
10
-,
10
==
-
VCE =2 OV
hFE= 4
V6E 011=-5 V
Teale iTI
II . ,
~ r--
"'"
••
IC (A)
Saturated switching characteristics
G 4824
Saturated switching characteristics
G 4825
(ns)
- -, ~
I?~
VCE=250V , -
hFE= 4
162 =-161 (CONT. LINE)
I 162 =-2161(DI5CONT. LINE)
f------ Tcase=2SDC
Ion
1-- If
- I- 1i7
I
Hi'
. , ••
IC (A)
(ns)
3
10
1
10
t.
-~ ,....
t"s ......
IVCE =250V ......
r--- t'Fp4
162 = -161 (CONT. LINE)
162 =-2161 (DI5CONT.llNE)
C:-- T case=l2S-C
--
1:7'
'I
'- I- -.-
Ion
454

leo
(A)
Maximum base current I so to drive
the discrete Darlington in saturated
limit conditions G ""
7
Ic:30A
VCE(sa!) .2.5V
_l--V
J
7
1/
J
V
f7
7
17
12 16 20 24 28 32
0.5
o
Derating curves
f-f- - -I-f- - ..
I
" '" I" '/""6
"- 'to.:. (/~
" "K~/'~o
,q.Ss.i N
I""~J;-

VCE(sat)
(V)
Collector-emitter saturation voltage
(only for BUX48/A)
G 3823
hFE =5
VCE(sat)
(V)
Collector-emitter saturation voltage
(only for BUX48/A)
\
G -3824
Tcas"e =12S-C
1\
0.5
o
,...
~
25"C\
-30"C
4 •• 4 ••
1
'/
II
10
4 ••
IC(A)
o
SA
1\1
4Al\.
'I.
15A
12A I'.
OA ~
IS(A)
VSE(sat )
(V)
Base-emitter saturation voltage (only
for BUX48/A)
I I
I I
I I
Tease =-30
III
I
III
rt
Gw 3825
IC
(A)
15
Extreme characteristics Ic vs. V BE
at VCE constant (only for BUX48/A)
G -3826
VCE ='.5V
Tcase=2SoC
90.,.Confidence
I
I'
0.5
f- ~5·
,.,
~
I'
I- ""'25"C
I-
10
MIN
J
AX
hFE =5
o
4 •• 4 ••
1
10
4 ••
Ic (A)
o
0.5
456

I
()JS) 2
10
8
4
2
8
2
Saturated switching characteristics
(only for BUX4S/A) G 3821
.-----
1"'0;
'"
I I II
Vee =250V
I I
hFE= 5
182 =-181
Is
--+-
"I
,
...... on ./
, ~ /
......
!i
I
r-
4 • 8 4 6 8 2
10-1 10 le(A)
Saturated switching characteristics
(only for BUX48/A)
! I IIII
1
G 38Z8
2-1
Vee = 250V
hFE = 5
10 -- 182 =-1 81
8
~
~- Tease =125"(: F=
f-- -
Is
--+ 1--
I'... j)
8
2r--
......... Ion
, 6 8 4 6 8 2
10-1 10 le(A)
I,
'T
(MHz )
11
Transition
BUX4S/A)
,
1/
frequency
(only
for
G 3829
Clamped ESJb test circuit
TEST CONDITIONS:
tp .Jl.
40V
10
9
J
I
I
I
, =IMHz
I VeE =10V
I
1
5V .. I-vee I .. 2V
Ie/I e =5
2Ie1 >\-le2 1 >le1
tp =adjusted for
nominal Ie
ReB = adjusted for
le2
Vclamp
8
• 8
8 8
Ie (A)
457

Switching times test circuit inductive
load
Discrete Darlington configuration
using BUX48 series devices
c
40V
I B1
lB
--o"......r-I-.r
-VB ---0
~-~-~~ BUX48
5-3652
Switchable power at 30A: 18KVA
458

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case,
parficularly intended for converters, inv'erters, switching regulators and motor control
systems applications.
ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (V BE= 0)
Collector-emitter voltage (R BE= SOn)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
'Collector peak current
Base current
Total power dissipation at T case ~40°C
Storage temperature
Junction temperature
800
500
V
V
400 V
10 V
10 A
15 A
5 A
100 W
-65to 150°C
150 °C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
Collector connected ,to case
.""
TO--3
459
5/80

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.1 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff V CE=800V 1 mA
current (VSE=O) V cE=800V T case= 125°C 3 mA
IESO Emitter cutoff V Es=10V 10 mA
current (I C = 0)
V CEO (sus) ·Collector-emitter
sustaining voltage
(I s=O)
Ic =100mA 400 V
V CER(sus) * Collector-emitter
sustaining voltage
Ic =100mA 500 V
(RSE=50Q)
VCE (sat) • Collector-emitter Ic =5A Is =1A 1.5 V
saturation voltage Ic =8A Is =2.5A 3 V
VSE(sat) ... Base-emitter Ic =5A Is =1A 1.4 V
saturation voltage Ic =8A Is =2.5A 1.8 V
hFE ... DC current gain Ic =1.2A V CE=5V 30 -
ton Turn-on time Ic =5A IS1 =1A 0.5 ~s
V cc=250V
ts Storage time Ic =5A I S1 =1A 3.5 ~s
I S2 =-2A V cc=250V
t f Fall time Ic =5A I S1 =1A 0.5 ~s
I S2 =-2A V cc=-250V
• Pulsed: pu!se duration ~ 300 ilS, duty cycls = 1.570
460

Safe operating areas
Derating curves
IC
(A)
8
,
; IC MAX PULS. PULSE OPERATION III
"l
~
10 "s
10 100,us
'IIr MAX CON.
6
,
DC OPERATION ~\,
;
8
6 -
,
;
10-1
,
6
ill \
'\
*FOR SII\GLENON ~,
REPETITIVE PULSE
r
G 3800 G 3845
1
I
~ HTcase :::40°C I
;
, 1111 :1
10-2
10
" ,
10'
, 68
10'
,
I
, 68
VCE (V ) 50 100
I -
Area of permissible operation during Turn-on provided R BE s:: 100n and
t p s:: 0,61ls
Transient thermal response
DC current gain
NR
G J668 G 3693
"FE 8
,I
b-05
0,03
" 0:
1cr1b - O.'
c;;. i
b-Q~5
t---l :--- 6 _ 2
6_,))1
10 2
T
JLJl
~'-Io-
T
6
, ..........
---I-
;
10
8
25·Cr-....::
t\.
Tease = 125°C
r--.. J\
--~ ~ -30·C
10 3 VCE =5V
i
1\Y" 11111111 I
10-5 10- 4
10 10-2 "t'(sec) 6 8
IC (A)
461

Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat)
G 369 1
VCE(sat )
G JB 18
(V)
(V)
hFE" S
O.S
Tease = -30 G e } I-
2S'C F
12S'C 'rl
')
..... r:.-
r::::::;::;:;: p
~ 4A
"JA\I
2A lI.
I"
lA
SA
6A
IC
8A
o
6 B 6 B
lC (A)
0.5 1.5 19 (A)
V9E(sat )
(V)
O.S
o
Base-emitter saturation voltage
j;;O
hFE"S
case=..,.30°C I ..... r;.. '"
~ 171/
~ .....-
2S'y
G 3689
I--
f- 12S'C
L---
6 B 6 B
Ic(A)
t
( }JS)
6
,
~
1 --t'-
f'...
~ !'.....
1/
2
Saturated switching characteristics
I--
(;,3846
Vce "250V f-+-
f-t-
hF.E" 5
f-t-
192 "-21 91
If
-
~
V
~
462

I
(I's)
•
10
Saturated switching characteristics
--
Is
---
....... i'-....
If
Ion ./
-' ~
-36 2
Vee = 250V
hFE ' 5
IS2 =-2IS1
Teas£>= 125°C
....... ......
-
~
./
-
Ie (A)
Saturated switching characteristics
-3847
8 Vce =250V ~
f-
hFE =5 f-
IS2 =-2IS1 ~
Tcase=-30°C ~
r:::==
If
--~ r--..~
-~
ton ....
Ie
(A)
Clamped reverse bias
safe operating areas
G- )848
Clamped ES/b test circuit
40V
TEST CONDITIONS:
5V .. I-vss I .. 2V
te/Is =5
2Is1 >1-ls2 1 >ISI
tp =adju~tl!'d
for
nommal Ie
ReB = adjuste-d for
IS2
o 200 400 600
VCE(clamp)(V)
463

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE SWITCH
The BUX84, is a multiepitaxial mesa NPN transistor, intended for use in converters inverters,
switching regulators, motor control systems and switching applications.
It is mounted in Jedec TO·-220 plastic package.
ABSOLUTE MAXIMUM RATINGS
V CES Collector-emitter voltage (V BE = 0)
V CEO Collector-emitter voltage (I B = 0)'
Ic Collector current
ICM Collector peak current
IB Base current
IBM Base peak current
P tot Total power dissip
Tstg Storage temp
T j Junction
800 V
400 V
2 A
3 A
0.75 A
1 A
40 W
-65 to 150 °C
150 °C
INTERNAL
Ie DIAGR~~:
MECHANICAL DATA
Dimensions in mm
10/82 464

THERMAL DATA
Rth j-case Thermal resistance junction--case max. 2.5 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless ohterwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff VCE = VCES 200 J.1A
current (V BE = 0) VCE = VCES Tj = 125°C 1.5 mA
lEBO Emitter cutoff VEB = 5V 1 mA
current (Ic = 0)
V CEO (susi Collector-emitter Ic = 100mA IB = 0
sustaining voltage L = 25mH 400 V
V CE(sat) * Collector-emitter Ic = 0.3A IB = 30m A 1.5 V
saturation voltage Ic = 1A IB = 0.2A 3 V
VBE(sat) * Base-em itter Ic = 1A IB = 0.2A 1.1 V
saturation voltage
hFE * DC current gain VCE = 5V Ic=0.1A 50 _.
ton Turn-on time 300 500 ns
ts
Storage time
Ic = 1A
IB = 0.2A
Vcc = 250V
-I B = Oo4A
1 3.5 J1S
t f Fall time 0.1 104 /J.S
* Pulsed. pulse duration = 300 /J.S, duty cycle = 1 %.
465

EPITAXIAL PLANAR NPN
FAST SWITCHING HIGH VOLTAGE POWER
The BUY 18S is a silicon planar epitaxial NPN transistor in Jedec TO-3 metal case. It is
intended for high-voltage switching power applications.
ABSOLUTE MAXIMUM RATINGS
Vcso Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (repetitive)
ICM Collector peak current (t .;;; 10 ms)
Is Base current
P tot Total power dissipation at Tease';;; 75°C
T stg Storage temperature
T j Junction temperature
400 V
200 V
6 V
7 A
10 A
15 A
4 A
50 W
-65 to 175°C
175 °C
INTERNAL SCHEMATIC DIAGRAM~LVr
60-,
MECHANICAL DATA
E
Dimensions in mm
6/77 466

THERMAL DATA
Rlh j-ease Thermal resistance junction-case max 2 ·C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 ·C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
leBo Collector cutoff VeB = 200V
current (IE = 0) VeB = 200V Tease = 100·C
V(BR) eBO * Collector~base Ie = 5mA
breakdown voltage
(IE = 0)
V EBO ... Emitter-base IE = 1 rnA
voltage
(Ie =0)
V CEO (SUS)*Collector-emitter Ie = 20 rnA
sustaining voltage
(lB = 0)
VeE (sal) * Collector-emitter Ie = 5A IB = 0.5A
saturation voltage Ie = 7A IB = 0.7A
VBE (S':I)* Base-emitter Ie = 5A IB = 0.5A
saturation voltage Ie = 7A IB = 0.7A
hFE * DC current gain Ie = 1A VeE = 5V
fr Transition frequency Ie = 0.5A VeE = 10V
CeBo Collector-base IE = 0 VeB = 50V
capacitance f = 1 MHz
ton Turn-on time Ie = 5A IBI = 0.5A
tall Turn-off time Ie = 5A
IBI = -IB2 = 0.5A
ISlb ** Second breakdown VeE = 40V
collector current
10 IJ-A
2 rnA
400 V
6 V
200 V
1 V
1 V
1.4 V
1.6 V
20 35 -
30 MHz
55 pF
1 IJ-s
0.3 1 IJ-s
1 A
* Pulsed: pulse duration = 300 IJ-s, duty cycle = 1.5 %
** Pulsed: 1 s, non repetitive pulse
467

Safe operating areas
DC current gain
IC •
(A) 6
IC MAX
(PULSED)
10
IC MAX
(CONT I NUOUS)
·PULSE
OPERATION
II111
Ims
G-1492
,
;:::;;--
--........
VCE -5V
'"
~ ..... 1--,
G 2653
10
10-2
VCEO MAX = 200V
10
46'
10'
Ii 68 I, 68
10' VCE (v)
6 •
10- 1
IC(A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
(V) 6
G 2651
VBE(sat )
(V )
G 2652
10 8
hFE=10
1.5
hFE =10
10-1
•
6
10- 2
1---
10-'
-- k-'
i
6 8
I
Tcase =125'C/
25'C
6 8
IC (A)
0.5
Tease;;: 25°C
.......-tllO-~
2 ,
-
~~
6 2 , 6 .
IC (A)
468

EPITAXIAL PLANAR N PN
HIGH VOLTAGE, HIGH CURRENT SWITCH
The BUY 47 and BUY 48 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal
case. They are used in high-voltage, high-current switching applications up to 7 A.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (IB = 0)
V EBO Emitter-base voltage (Ie = 0)
Ic Collector current
ICM Collector peak current (repetitive)
P tot Total power dissipation at Tamb ,.;; 25·C
Storage temperature
Junction temperature
Tease ,.;;50·C
BUY 47 BUY 48
150V 200V
120V 170V
6V
7A
10A
1W
10W
-65 to 200·C
200 ·C
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
469
6/77

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
15 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
Icso Collector cutoff for BUY 47
current (IE = 0) Vcs= 80 V 10 fLA
Vcs= 80 V Tease = 125°C 1 mA
for BUY 48
Vcs= 100 V 10 fLA
Vcs= 100 V Tease = 125°C 1 mA
V(SR) cso * Collector-base Ic = 1 mA
breakdown voltage for BUY 47 150 V
(IE = 0) for BUY 48 200 V
V CEO (sus)* Collector-emitter Ic = 20mA
sustaining voltage for BUY 47 120 V
(Is = 0) for BUY 48 170 V
VESO • Em Itter -base IE = 1 mA .6 V
voltage
(lc=O)
VCE(satt Collector-emitter Ic = 0.5 A Is = 50 mA 0.05 V
saturation voltage Ic =2A Is = 0.2 A 0.45 V
Ic = 5A Is = 0.5 A 1 V
VSE(sat) * Base-emitter Ic = 0.5 A Is = 50 mA 0.8 V
saturation voltage Ic = 2A Is = 0.2 A 1.1 V
Ic =5A ·I s = 0.5 A 1.5 V
470

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
hFE* DC 'current gain Ic = 50 mA VCE = 5 V 130 -
Ic = 0.5 A VCE = 5 V 40 150 -
Ic = 2A VCE = 5 V 40 130 -
Ic =5A VCE = 5 V 15 45 -
fT Transition frequency Ic = 100mA VCE = 10 V 90 MHz
Ceso Collector-base IE = 0 Ves= 50 V 45 80 pF
capacitance f = 1 MHz
ton
toft
Turn-on time
Turn-off time
Ie =5A Vee= 40 V
IS1 = -ls2 = 0.5 A
1 fLs
2 fLs
* Pulsed: pulse duration = 300 fLs, duty cycle = 15%
Safe operating areas
G -2667
I"'
roo.
DC OPERATION
I"
1\
\
10-1 1\
8
10-2
1\
-~ r-- BUV48
BUV47
4 6 8 • 6 8
10 VCE (V)
471

DC current gain
Collector-emitter saturation voltage
G-2666
VCE(sat )
G-2664
VCE =5V
(v)
0.6
200
100
-
r-...
,/
\
V \
0.4
D.2
hFE=10
o
o
'"
10.2
IC(A)
Base-emitter saturation voltage
Collector-base capacitance
IC
G-2665
Ceeo
G-2668
(A)
(pF)
75
f=IMH
50
r-...
25
o
1.5 V BE(sat) (V)
o
50 100 150 Vee(V)
472

Saturated switching characteristics
Power rating chart
-
hFE-1O
If
.......
Ion
-r-.
""= 1'1--
j-.!!. r-..
VCC=40V
lp=10ps
G 2670
Ptot
(W)
12
10
I"
l-
"
,
l"-
I"
G-266
"- I"-
50 100 150 Tcase("C)
Switching time test circuit
-11.6V +40V
VCC
+37V---rI
L
OV.J
~10~sl-­
INPUT PULSE
2011
tr,tf~10ns
-3.3V
5-2270
DUTY CYCLE= 1 % 473

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, MEDIUM CURRENT SWITCH
The BUY49P is a silicon epitaxial planar NPN transistor in Jedec TO-126 plastic package. It
is used in high-current switching applications up to 3A.
ABSOLUTE MAXIMUM RATINGS
VCBO Collector-base voltage (IE = 0) 250 V
V CEO Collector-emitter voltage (I B = 0) 200 V
V EBO Emitter-base voltage (I C = 0) 6 V
Ic Collector current 3 A
ICM Collector peak current 5 A
P tot Total power dissipation at 15 W
Tstg Storage temperature -65 to 150 °C
T j Junction temperat 150 °C
MECHANICAL DATA
IAGRAM
'4:
Dimensions in mm
, ' ,'. ,', "
'w .. ~,!}tmJ· ~~'~,·.~5h& ~#~,ohhe 1~'~$ :~ .. ~ntr~·i~·
10/82 474

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 8.33 °C/W
ELECTRICAL CHARACTERISTICS (T case = 2SOC unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
Icso Collector cutoff Vca = 200V 0.1 p.A
current (I E = 0)
Vcs~ Collector-base Ic = 100p.A 2S0 V
breakdown voltage
(IE = 0)
V CEo(susi Collector-emitter Ic = 20mA 200 V
sustaining voltage
(Is = 0)
VESO * Emitter-base IE = 1mA 6 V
voltage (lc = 0)
V CE(sat) * Collector-emitter Ic = O.SA Is = SOmA 0.2 V
saturation voltage
VSE(sat) * Base-emitter Ic = O.SA Is = SOmA 1.1 V
saturation voltage
hFE * DC current gain Ic = 20mA VCE = 2V 30 -
Ic =20mA VCE = SV 40 120 -
Ic = O.SA VCE = SV 40 -
Ic =20mA VCE = 2V
T case = -SsoC 16 -
fT Transition frequency Ic = 100mA VCE = 10V 30 MHz
Ccao Collector-base IE =0 Vcs = 10V
capacitance f = 1MHz SO pF
ton Turn-on time Ic = O.SA Vcc = 20V 0.8 p.s
toff Turn-off time IS1 = -ls2 = SOmA 2.S p.s
* Pulsed: pulse duration = 300 p.s, duty cycle = 1.S%.
47S

EPITAXIAL PLANAR N PN
HIGH VOLTAGE, MEDIUM CURRENT SWITCH
The BUY 49S is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
used in high-voltage, high-current switching applications up to 3A.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current
P tot Total power dissipation at Tamb .;;; 25°C
Storage temperature
Junction temperature
Tease .;;;50°C
INTERNAL SCHEMATIC DIAGR:4 :
250 V
200 V
6 V
3 A
5 A
1 W
10 W
-65 to 200°C
200 °C
MECHANICAL DATA
Dimensions in mm
6177 476

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
m~x
15 'C/W
175 'C/W
ELECTRICAL CHARACTERISTICS (Tease
25'C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
leso Collector cutoff Ves= 200 V 0.1 fLA
current (IE = 0) Ve8= 200 V Tease = 150 'C 50 fLA
V(SR) eso * Collector-base Ie = 100 fLA 250 V
breakdown voltage
(IE = 0)
VeEO (sus)* Collector-emitter Ie = 20 mA 200 V
sustaining voltage
(Is = 0)
VESO* Emitter-base IE = 1 mA 6 V
voltage
(Ie =0)
VCE (sat) * Collector-emitter
saturation voltage
Ie = 0.5 A Is = 50 mA 0.2 V
VSE (sat)* Base-emitter Ie = 0.5 A Is = 50 mA 1.1 V
saturation voltage
hFE * DC current gain Ie = 20 mA VeE = 5V 40 -
Ie = 0.5 A VeE = 5V 40 80 -
Ie = 20 mA VeE = 2V
Tease = -55'C 16 -
fT Transition frequency Ie = 100mA VCE = 10 V 50 MHz
Ceso Collector-base IE = 0 Ves= 10 V
capacitance f = 1 MHz 30 pF
ton
toft
Turn-on time
Turn-off time
Ie = 0.5 A Vee = 20 V
IS1 = -182 = 50 mA
0.3 fLs
1 fLs
IS/b ** Second breakdown VeE = 50 V 0.2 A
collector current
* Pulsed: pulse duration = 300 fLs, duty cycle 1.5%
** Pulsed: 1 s, non repetitive pulse
477

Safe operating areas
DC current gain
G 2464
G 2{'59
IC '
(A) 6
IC MAX PULSED I *PUL SE OPERATION
IC MAX CONTINUOUS
\
Ims\ l00~s
1\
VCE =5V
10-' ,
10-'
-.
DC OPERATION
II IIII
*FOR SINGLE NON
REPETITIVE PULSE \
.......
, , 6' , ,.
10 10' VCE (V)
100
50
o
....."
10-2
-
,
10-'
1\
\
•
I
\
\
\
, 6'
IC (A)
DC transconductance
Collector-emitter saturation voltage
IC
(Al
o
hFE = 10
...
./
/
f
f
f
I
f
f
I
I
G 21056
0.5 VBE(sat) (V)
VCE(sat)
(V)
0.6
0.4
0.2
hFE =10
-
,
/
/
I
I
G 2451
6'
Ic (Al
478

Transition frequency
Collector-base capacitance
fT
(MHz)
G 2463
CCBO
(pF)
G - 24
61
80
60
60
40
20
o
/
/~
V
VCE ,5V
, ,
'" 1\ '\
, ,
IC (A)
40
20
10
1\
\
\
1\
\
IE,O
B
10
" i'-
I"-r-
, , , ,
10'
, , ,
VCB (V)
Saturated switching characteristics
Power rating chart
t
("s) ,
r---
~
G 259811
hFE ,10
VCC ,20V
tp ,10"s
1 61'-162
./
I"..
""-~
G- 2462
Ptot H-+-+-+-H-++-f---H4-+-+-+-H-++--l
(W)
15
10
~ ..
ton
~
tf
10- 1
, ,
Ie (A)
o 50 100 150 Tc.se('C)
479

EPITAXIAL PLANAR N PN
HIGH CURRENT, GENERAL PURPOSE TRANSISTOR
The BUY 68 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
used for high-current switching applications and in power amplifiers. The BUY 68 is
available in 3 hFE gain bands.
ABSOLUTE MAXIMUM RATINGS
VeBo
VeER
VeEo
V EBO
Ie
P tot
Collector-emitter voltage (R~E::; 10 Q)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Total power dissipation at Tamb .;;; 25°C
Tease';;; 50°C
Collector-base voltage (IE = 0)
T stg Storage temperature
T j Junction temperature
100 V
80 V
60 V
6 V
7 A
1 W
10 W
-65 to 200°C
200 °a
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
6/77 480

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
15 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcBO Collector cutoff VCB = 60 V 1 f1A
current (IE = 0)
V(BR) CBO * Collector-base
breakdown voltage
(IE = 0)
V CER (sus!' Collector-emitter
sustaining voltage
(RBE = 10 \1)
V CEO (sus)* Collector-emitter
sustaining voltage
(lB = 0)
Ic = 1 mA 100 V
Ic = 50 mA 80 V
Ic = 50 mA 60 V
V EBO * Em itter -base
voltage
IE = 1 mA 6 V
(I c =0)
V CE (sat)* Collector-emitter Ic =2A IB = 0.2 A 0.6 V
saturation voltage Ic = 5A IB = 0.5 A 1 V
VBE (sat)* Base-emitter Ic =2A IB = 0.2 A 1 1.3 V
saturation voltage Ic =5A IB = 0.5 A 1.2 1.6 V
hFE * DC current gain Ic = 0.1 A VCE = 1 V 40 130 -
Group 6 40 70 -
Group 10 63 110 -
Group 16 100 170 -
Ic = 1 A VCE = 1 V 40 130 250 -
Group 6 40 70 100 -
Group 10 63 110 160 -
Group 16 100 170 250 -
fr Transition frequency Ic = 0.5 A VCE = 5 V 50 MHz
CCBO Collector-base IE = 0 VCB = 10 V
capacitance f = 1 MHz 80 pF
j
I
ton
toft
Turn-on time
Turn-off time
Ic =5A Vcc= 20 V
IB1 = -IB2 = 0.5 A
0.35 f1s
0.75 f1s
* Pulsed: pulse duration = 300 f1s, duty cycle 1.5%
481

Safe operating areas
DC current gain
Ie 8 k MA
PULSE
PERATION
6-2577
10'
8
V
(A) 6
De OPERATION
-FOR SINGLE NDN
REPETITIVE PULSE
lms
........
'\
'"
\
6
4
-
1 GROllP 16
i peAL
>---- [toR \0
10'
8r=-~ ROllI' 6
6
4
VCE·IV
;:"
r\
1
6 •
10
6 •
VeE (V)
10
1 4 6 8 1 6 4 6 6
10-1 Ic (A) 10
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
I
hFE =10
G-2562
Ie
(A)
hFE=10
G-2S81
4
0.5
/
V
V
II
Ie (A)
o
0.5 1.5 VBE(sat) (V)
482

Transition frequency
Collector-base capacitance
'T
(MHz)
YeE=5V
G -2519
eeB

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUY 69A, BUY 69B, and BUY 69C are silicon multiepitaxial mesa NPN transistors
in Jedec TO-3 metal case. They are intended for horizontal deflection
output stage of CTV receivers and high voltage, fast switching and industrial
applications.
ABSOLUTE MAXIMUM RATINGS
V CES
Collector-emitter voltage (VBE = 0)
VCEO Collector-emitter voltage (IB = 0)
VEBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (tp ~ 10ms)
IB Base current
P tot Total power dissipation at Tcase~25°C
Tstg Storage temperature
T j Junction temperature
BUY 69A BUY 69B BUY 69C
1000V 800V 500V
400V 325V 200V
8V
10A
15A
3A
100W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR~~
MECHANICAL DATA
Dimensions in mm
'COllector 60nnected to case
TO-3
5/80 484

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.75 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for BUY69A VCE = 1000V 1 mA
current (VBE = 0) for BUY69B VCE = 800V 1 mA
fs>r BUY6ge VCE = 500V 1 mA
lEBO Emitter cutoff V EB = 8V 1 mA
current (Ic = 0)
VCBO Collector-base for BUY69A Ic = 1mA 1000 V
voltage (IE = 0) for BUY69B Ic = 1mA 800 V
for BUY6ge Ic = 1mA 500 V
VCEO (Sus)'Collector-emitter Ic = 100mA
sustai n i ng voltage for BUY69A 400 V
(lB = 0) for BUY69B 325 V
for BUY6ge 200 V
VCE (sat) , Collector-emitter Ic = 8A IB = 2.5A 3.3 V
saturation voltage
VBE (sat) , Base-emitter Ic = 8A IB = 2.5A 2.2 V
saturation voltage
hFE , DC current gain Ic = 2.5A VCE = 10V 15 -
h Transition Ic = 0.5A VCE = 10V 10 MHz
frequency
ISlb " Second breakdown VCE = 25V 4 A
collector current
ton Turn-on time Ic = 5A VCE = 250V 0.2 f.Ls
IB1 = 1A
485

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
ts
Storage time
Ie = 5A
VeE = 250V
1.7 fLs
tj
Fall time
161 = -162 = 1A
0.3 fLs
tj
Fall time Ie = 8A VeE = 40V
161 = -162 = 2.5A
1 fLS
Pulsed: pulse duration = 300fLS, duty cycle = 1.5 %
Pulsed: 1 s, non repetitive pulse
For characteristics curves see the BUW 34/5/6 series.
486

MULTIEPITAXIAL PLANAR NPN
LINEAR AND SWITCHING APPLICATIONS
The D44C1 to D44C12 are silicon multiepitaxial planar transistors in TO-220 plastic package
intended for linear and switching applications.
ABSOLUTE MAXIMUM RATINGS
D44C 044C
'(/l/3 .'41616
D44C D44C
7/8/9 10/11/12
V CES
V CEO
V EBO
Ic
ICM
Ptot
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current\~1'1 =
Total power dissipation'
FS/i,'i
40V
·30V
5V
55V 70V
45V 60V
5V 5V
4A
6A
30W
1,67W
-55 to 150°C
150°C
90V
80V
5V
INTERNAL
TIC DIAGRAM
,~'
MECHANICAL DATA
E
Dimensions in mm
Collector connected to tab.
l,.amv.
487
10/82

THERMAL DATA
R!h j-case Thermal resistance junction--case max. 4.2 °C/W
R!h j-amb Thermal resistance junction-ambient max. 75 °C;W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff V CE = Rated V CES 10 fJ.A
current (V BE = 0)
, lEBO * Emitter cutoff V EB = 5V 100 fJ.A
current (Ic = 0)
V CEO (sus) Collector--emitter Ic = 100mA
sustaining voltage for D44Cl-2-3 30 V
for D44C4-5-6 45 V
for D44C7-8-9 60 V
for D44Cl0-11-12 80 V
V CE(sa!) * Collector--emitter Ic = lA IB = 50mA
saturation voltage for D44C2-3-5-6-8-9-11-12 0.5 V
Ic = lA IB=O.lA
for D44Cl-4-7-10 0.5 V
V BE (sa!) * Base--emitter Ic = lA IB = 100mA 1.3 V
saturation voltage
hFE * DC current gain Ic = 0.2A VCE = lV 40 120 -
Ic = 2A VCE = lV 20
for D44C3-6-9-12
Ic = 0.2A VCE = lV 100 220 -
Ic = lA VCE = lV 20
for D44C2-5-8-11
Ic = 0.2A VCE = lV 25
Ic = 1A VCE = lV 10
for D44Cl-4-7-10
* Pulsed: pulse duration = 300 fJ.S, duty cycle = 2%.
488

MULTIEPITAXIAL PLANAR NPN
SWITCHING APPLICATIONS GENERAL PURPOSE
The D44H series are silicon multiepitaxial planar transistors and are mounted in Jedec
TO-220 plastic package.
They are intended for various switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS
V CEO
V EBO
Ic
ICM
Ptot
Tstg
T j
Collector-emitter voltate (I B = OJ,
Emitter base voltage (Ic = 0)
Collector current
80V
MECHANICAL DATA
Dimensions in mm
Collector conn",cted to tab.

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 2.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff VCB = Rated VCEO 10 J1A
current (I E = 0)
lEBO Emitter cutoff VEB = Rated VEBO 100 J1A
current (I C = 0)
V CEO (sus) Collector-emitter Ic = 100mA for D44H1/2 30 V
sustaining voltage for D44H4/5 45 V
for D44H7/8 60 V
for D44H10/11 SO V
V CE (sat) * Collector-emitter Ic =SA IB = O.4A
saturation voltage for D44H2/5/8/11 1 V
Ic =SA IB = O.SA
for D44H1/4/7/10 1 V
V BE (sat)* Base-emitter Ic = SA IB = O.SA 1 5 V
saturation voltage
hFE * DC current gain VCE = lV Ic = 2A
for D44H1/4/7/10 35 --
for D44H2/5/8/11 60 ---<
VCE = lV Ie = 4A
for D44H1/4/7/10 20 -_.-
for D44H2/5/8/11 40 -
* Pulsed: pulse duration = 300 JlS, duty cycle = 1.5%.
490

MULTIEPITAXIAL PLANAR NPN
LINEAR AND SWITCHING APPLICATIONS
", >i :."',':"
The D4401, D4403 and D4405 are silicon multiepitaxial planar tran9i~tors
plastic package intended for linear and switching applications. .. .. .
in TO-220
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO
Ic
P tot
Collector-base voltage (I E = Oi
Collector-emitter voltage (I B
Emitter-base voltage (I B =
Collector current
, "i
,x
.D¥01
200V
125V
7V
04403
250V
175V
7V
4A
31.25W
1.67W
-55 to 150°C
150°C
04405
300V
225V
7V
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
TO-220
491
10/82

THERMAL DATA
Rth j-ease
Rth j-amb.
Thermal resistance junction--case
Thermal resistance junction--ambient
max.
max.
4
75
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max.
ICBO Collector cutoff Rated VCEO 10
current (I E = 0)
V CEO(SU~ Collector emitter Ic = 10mA
sustaining voltage for D44Q1 125
for D44Q3 175
for D44Q5 225
V CE(sat) * Collector--emitter Ic = 2A IB = 0.2A 1
saturation voltage
VBE(Sat) * Base-emitter Ic = 2A Is = 0.2A 1.3
saturation voltage
hFE * DC current gain Ic = 0.2A VCE = 10V 30
Ic = 2A VcE =10V 20
fT Transition frequency Ic = 100mA VCE = 10V 20
CCBO Collector base VCB = 10V f = lMHz 32
capacitance
ton Turn-in time 0.4
Vcc = 50V
ts Storage time Ic = lA 2
IB1 = -IB2 = O.lA
tl Fall time
-
1.7
Unit
/1A
V
V
V
V
V
-
-
MHz
pF
/J.s
/1s
/1s
* Pulsed: pulse duration = 300 /1S, duty cycle = 2%.
492

EPITAXIAL-BASE NPN/PNP
COMPLEMENTARY POWER DARLINGTONS
The MJ 900, MJ 901, MJ 1000 and MJ 1001 are silicon epitaxial-base transistors in
monolithic Darlington configuration, and are mounted in Jedec TO-3 metal case. They
are intended for use in power linear and switching applications.
The PNP types are the MJ 900 and MJ 901 and their complementary NPN types are the
MJ 1000 and MJ 1001 respectively.
ABSOLUTE MAXIMUM RATINGS PNP' MJ 900 MJ 901
NPN
MJ1000 MJ1001
Vcso Collector-base voltage (IE = 0) 60V 80V
VCEO Collector-emitter voltage (Is = 0) 60V 80V
VESO Emitter-base voltage (Ie = 0) 5V
Ie Collector current 8A
Is Base current 0.1A
Ptot Total power dissipation at Tease ~ 25 'C 90W
Tstg Storage temperature
Junction temperature
-65 to 200 'C
200 'C
T j
• For PNP types voltage and current values are negative
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-3
493 6/77

','
) , '" ,;
"~a
, m'
~:" , " ="" '" ~1"'0'";::/
,1'
oJ
THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.94 ·C/W
ELECTRICAL CHARACTERISTICS· (Tease = 25·C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICER Collector cutoff for MJ900 and MJ1000
current (ReE = 1 kO) VCE = 60 V
for MJ901 and MJ1001
VCE = 80 V
Tease= 150·C
for MJ900 and MJ1000
VCE = 60 V
for MJ901 and MJ1001
VCE = 80 V
ICEO Collector cutoff for MJ900 and MJ1000
current (Is = 0)
VCE = 30 V
for MJ901 and MJ1001
VCE = 40 V
IESO Emitter cutoff VES = 5 V
current (Ie = 0)
VeEo (sus)* Collector-emitter Ic = 100mA
sustaining voltage for MJ900 and MJ1000
(Is = 0)
for MJ901 and MJ1001
VCE(sat) * Collector-emitter Ie =3A Is = 12mA
saturation voltage Ic =8A Is = 40mA
VSE * Base-emitter voltage Ic =3A VCE = 3 V
hFE * DC current gain Ie =3A VeE = 3 V
Ic =4A VCE = 3 V
1 mA
1 mA
5 mA
5 mA
0.5 mA
0.5 mA
2 mA
60 V
80 V
2 V
4 V
2.5 V
1000 -
750 -
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
• For PNP types current and voltage values are negative
Fer characteiistic curves see iiie 2i~ 6G53i55 series
494

EPITAXIAL-BASE NPN/PNP
COMPLEMENTARY POWER DARLINGTONS
The MJ 2500, MJ 2501, MJ 3000 and MJ 3001 are silicon epitaxial-base transistors in
monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are
intended for use in power linear and switching applications.
The PNP types are the MJ 2500 and MJ 2501 and the ir complementary NPN types are the
MJ 3000 and MJ 3001 respectively.
ABSOLUTE MAXIMUM RATINGS PNp O MJ2500 MJ2501
NPN
MJ3000 MJ3001
V CBO Collector-base voltage (IE = 0) 60V BOV
V CEO Collector-emitter voltage (IB = 0) 60V BOV
VEBO Emitter-base voltage (lc = 0) 5V
Ic Collector current 10A
IB Base current 0.2A
P tot Total power dissipation at Tease";;; 25°C 150W
T stg Storage temperature
Junction temperature
-65 to 200°C
200 °C
T j
° For PNP types voltage and current values are negative
MECHANICAL DATA
Dimensions in mm
495 6/77

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTICS ° (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICER Collector cutoff for MJ2500 and MJ3000
current (RBE = 1 kQ) VCE = 60V
for MJ2501 and MJ3001
VCE = 80 V
Tease = 150°C
for MJ2500 and MJ3000
VCE = 60 V
for MJ2501 and MJ3001
VCE = 80 V
ICEO Collector cutoff for MJ2500 and MJ3000
current (lB = 0)
VCE = 30 V
for MJ2501 and MJ3001
VCE = 40 V
lEBO Emitter cutoff V EB = 5 V
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = 100mA
sustaining voltage for MJ2500 and MJ3000
(IB = 0)
for MJ2501 and MJ3001
VCE (sat)* Collector-emitter Ic = 5A IB = 20mA
saturation voltage Ic = 10 A IB = 50mA
VBE * Base-emitter voltage Ic =5A VCE = 3V
hPE* DC current gain Ic =5A VCE = 3 V
1 mA
1 mA
5 mA
5 mA
1 mA
1 mA
2 mA
60 V
80 V
2 V
4 V
3 V
1000 -
• Pulsed": pulse duration = 300 flS, duty cycle = 1.5%
o For PNP types current and voltage values are negative
~Oi c~aiCictelisUc curves see ine 2N6u50 i 57 series
496

i,
I
i.
11
EPITAXIAL·BASE PN P
POWER LINEAR AND SWITCHING APPLICATIONS
The MJ 2955 is a silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. It
is intended for power switching circuits, series and shunt regulators, output stages and
hi-fi amplifiers.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (RBE~ 100 Q)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Base current
Total power dissipation at T case~ 25 'c
Storage temperature
Junction temperature
-100
-70
-60
-7
-15
-7
150
-65 to 200
200
v
V
V
V
A
A
W
'c
'C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
497
6/77

THERMAL DATA
R'h j-case Thermal resistance junction-case max 1.17 'C/W
ELECTRICAL CHARACTERISTICS (T case = 25 'C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICEX Collector cutoff VCE = -100V
current (V8E = 1.5V) VCE = -100V T case = 150'C
ICEO Collector cutoff VCE = -30 V
current (18 = 0)
lEBO Emitter cutoff V8E = 7 V
current (lc = 0)
V CER (sus)* Collector-emitter Ic = -200mA
sustaining voltage
(R8E = 100 S"l)
V CEO (sust Collector-emitter Ic = -200mA
sustaining voltage
(18 = 0)
VCE (sat) * Collector-emitter Ic = -4 A 18 = -0.4A
saturation voltage Ie = -10 A 18 = -3.3A
V8E* Base-emitter voltage Ie = -4 A VeE = -4 V
hFE* DC current gain Ie = -4 A VeE = -4 V
Ie = -10 A VeE = -4 V
fT Transition frequency Ic = -0.5A VeE = -10V
-1 mA
-5 mA
-0.7 mA
-5 rnA
-70 V
-60 V
-1.1 V
-3 V
-1.8 V
20 70 -
5 -
4 MHz
* Pulsed: pulse duration = 300 Jl.s, d!...!ty cyc~e = 1.5%
For characteristic curves see the 2N 5875 series
498

EPITAXIAL-BASE NPN/PNP
GENERAL PURPOSE
The MJ4030/31/32/33/34/35 are medium-power silicon Darlington in Jedec TO-3 metal
case, intended for use in general purpose and amplifier applications.
ABSOLUTE MAXIMUM RATINGS NPN MJ4030 MJ4031 MJ4032
PNP* MJ4033 MJ4034 MJ4036
V CBO Collector-base voltage (IE = 0) 60V 80V 100V
V CEO Collector-emitter voltage (I B = 0) 60V 80V 100V
V EBO Emitter-base voltage (lc = 0) 5V
Ic Collector current 16A
IB Base current 0.5A
P tot Total power dissipation at T case

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 1.17 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICED Collector cutoff VCE = 30V 18 = 0
current (18 = 0) MJ4030/33
VCE = 40V 18 = 0
MJ4031/34
VCE = 50V 18 = 0
MJ4032/35
I E80 Emitter cutoff V 8E = 5V Ic = 0
current (Ic = 0)
ICER Collector cutoff for MJ4030/33 VC8 = 60V
current (R 8E = 1 Kn) for MJ4031/34 VC8 = 80V
for MJ4032/35 VC8 = 100V
T case = 150° C
for MJ4030/33 VC8 = 60V
for MJ4031/34 VC8 = 80V
for MJ4032/35 VC8 = 100V
V(8R)CEO * Collector-emitter Ic = 100mA 18 = 0
Breakdown voltage for MJ4030/33
for MJ4031/33
for MJ4032/35
V CE(sat) * Collector-emitter Ic = lOA 18 = 40mA
saturation voltage Ic = 16A 18 = 80mA
V 8E * Base-emitter voltage Ic = lOA VCE = 3V
hFE * DC Current gain Ic = lOA VCE = 3V
3 mA
3 mA
3 mA
5 mA
1 mA
1 mA
1 mA
5 mA
5 mA
5 mA
60 V
80 V
100 V
2.5 V
4 V
3 V
1000 -
* Pulsed: pulse duration =300 IlS, duty cycles';;; 2%.
For PNP types voltage and current values are negative.
500

EPITAXIAL PLANAR NPN
HIGH POWER FAST SWITCHING
The MJ10004/10005 are silicon darlington transistors with integrated" ,
up diode, mounted in Jedec TO-3 metal case designed for high- '
plications. The MJ10004P and MJ10005P are mounted in SOT ~"
ABSOLUTE MAXIMUM RATINGS
-emitter speed­
;awitching ap·
ilar to TO-21B.
MJ1004P/5P
V CEO Collector-emitter voltage (lB = 0)
V CEX Collector-emitter voltage (V BE = -5V
V CEV Collector-emitter voltage (V BE = 1
V EBO Emitter-base voltage (lc = 0) .
Ic Collector current
ICM Collector peak current
IB Base current
IBM Base peak current
P tot
BV
20A
30A
2.5A
5A
400V
450V
500V
TO-3 SOT-93
175W 150W
Tstg
-65 to 200°C -65 to 175°C
T j
200°C 175°C
INTERNA
c
,------------,
~
Ī
RI Typ. lOOn
R2 Typ. 350n
MECHANICAL DATA
Dimensions in mm
501
10/B2

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICER Collector cutoff V CE = Rated V CEV
current (R BE = 50.12) Tease = 100° C 5 mA
IcEv Collector cutoff V CEV = Rated Value 0.25 mA
current (V BE = 1.5V)
5 mA
V CEV = Rated Value
Tease = 150°C
lEBO Emitter cutoff V EB = 2V 175 mA
current (Ic = 0)
V CEO (sus) Collector-emitter Ic = 250mA
sustaining voltage V Clamp = Rated V CEO
IB = 0) for MJ10004 350 V
for MJ10005 400 V
V CEX (sus) Collector-emitter
sustaining voltage
Ic = 2A
V Clam p = Rated V CEX
(VBE = -5V) Tease = 100°C
for MJ10004 400 V
for MJ10005 450 V
Ic = 10A T case = 100°C
V Clamp = Rated V CEX
for MJ10004 275 V
for MJ10005 325 V
V CE(sat) * Collector-emitter Ic = 10A IB = 400mA 1.9 V
saturation voltage Ic = 20A IB = 2A (°)3 V
Ic = 10A IB = 400mA
T case = 100°C 2.5 V
V BE(sat) * Base-emitter Ic = 10A IB = 400mA 2.5 V
saturation voltage Ic = 10A Is = 400mA
Tease = 100°C 2.5 V
-
--- -- ---- ----- - ---
(0) For MJ1 0004P/5P = 5V max.
502

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
hFE * DC current gain Ie = 5A VeE = 5V 50 600 --
Ie = lOA VeE = 5V 40 400 -
V f * Diode forward voltage IF = lOA 3 5 V
hfe Small-signal Ie = lA VeE = 10V
current gain ftest = 1 MHz 10 -
Cob Output capacitance V eB = 10V IE = 0
f test = 100MHz 100 325 pF
ton Turn--on time
t, Rise time
t f Fall time
Vee = 250V Ie = lOA
IB1 = -IB2 = 400mA
V BE(off) = 5V
tp = 50Jls duty cycle -2%
0.22 0.8 JlS
0.6 1.5 Jls
r---
0.15 0.5 Jls
*Pulsed: pulse duration = 300 Jl duty cycle = 1.5%.
503

EPITAXIAL-BASE NPN/PNP
GENERAL PURPOSE
The MJll0ll/12/13/14/15/16 are silicon transistors in Darling
TO-3 metal-case. Intended for general purpose and amplifier
ABSOLUTE MAXIMUM RATINGS
V C80 Collector-base voltage (I E = 0)
V CEO Collector-emitter voltage (I
V E80 Base-emitter voltage (lc =
Ic Collector current
18 Base current
P tot Total power di
Tstg Storage te
T j Junctio
90V
90V
5V
30A
lA
200W
-65 to 20QoC
200°C
MJ11015
MJ11016
120V
120V
* For PNP t
MECHANICAL DATA
c
NPN r~~-----l
• : I
I
I
I R R I Rl '" 8Kn
L __ ~~_~:J R2 '" 60n
PNP I~~-----
• I
i
I
I
L __ ~~_
Rl'" 8Kn
R2 '" 60n
Dimensions in mm
10/82 504

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 0.87 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICEO Collector cutoff VCE = 50V
current (I B = 0)
lEBO Emitter cutoff V BE = 5V
current (I C = 0)
ICER Collector cutoff for MJ11011/12 VCE = 60V
current (R BE = 1 Kn.) for MJ11013/14 VCE = 90V
for MJ11015/16 VCE = 120V
Tease = 150°C
for MJ11011/12 VCE = 60V
for MJ11013/14 VCE = 90V
for MJ11015/16 VCE = 120V
1 mA
5 mA
1 mA
1 mA
1 rnA
5 rnA
5 mA
5 mA
V(BR)CE;; Collector emitter Ic = 100mA IB = 0
breakdown voltage
for MJ11011/12
for MJ11013/14
for MJ11015/16
60 V
90 V
120 V
VCE(sat) * Collector-emitter Ic = 20A IB = 200mA
saturation voltage Ic = 30A IB = 300mA
VBE(Sat) * Base-emitter Ic = 20A IB = 200mA
satu ration vo Itage Ic = 30A IB = 300mA
hFE * DC current gain Ic = 20A VCE = 5V
Ic = 30A VCE = 5V
hfe Small signal Ic = lOA VCE = 3V
current gain
f = 1 MHz
3 V
4 V
3.5 V
5 V
1000 --
200 -
4
* Pulsed: pulse duration = 300 j1S, duty cycle = 1.5%
For PNP devices voltage and current values are negative.
505

EPITAXIAL PLANAR NPN/PNP
HIGH VOLTAGE POWER TRANSISTOR
The MJE340/MJE350 are silicon epitaxial planar transistors in jed
intended for use in medium power linear and switching applicati
tic package
ABSOLUTE MAXIMUM RATINGS
V CEO
V EBO
Ic
P tot
Tstg
T j
Collector-emitter voltage (I B =
Emitter-base voltage (lc = 0
Collector current
Total power dissipati
Storage tempera
Junction te
300 V
3 V
0.5 A
20.8 W
-65 to 150°C
150 °C
INTER
MECHANICAL DATA
Dimensions in mm
2.7"""
09"'"" 1.2
Q58
. .~. .'
'~~.f~~'hin,.t~1ii ~fhe6-~ ... ~~·of th.lea~s i$·un

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 6.0 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO Collector cutoff VCB = 300V
current (I B = 0)
lEBO Emitter cutoff V EB = 3V
current (Ic = 0)
100 J1A
100 J1A
V CEO (sus) Collector-emitter
sustaining voltage
(I B = 0)
Ic = 1mA
300 V
hFE DC current gain Ic = 50mA VCE = 10V
30 240 -
* Pulsed: pulse duration = 300 IlS, duty cycle";;; 2%.
For PNP types voltage and current values are negative.
507

EPITAXIAL-BASE NPN/PNP
MEDIUM POWER DARLINGTONS
The MJE 700, MJE 701, MJE 702, MJE 703, MJE 800, MJE 801, MJE 802 and MJE 803 are
silicon epitaxial-base power transistors in monolithic Darlington configuration and
are mounted in Jedec TO-126 plastic package,
They are intended for use in medium power linear and switching applications,
The PNP types are the MJE 700, MJE 701, MJE 702 and MJE 703 and their complementary
NPN types are the MJE 800, MJE 801, MJE 802 and MJE 803,
ABSOLUTE MAXIMUM RATINGS
PNP'
NPN
MJE700 MJE702
MJE701 MJE703
MJE800 MJE802
MJE801 MJE803
V CBO Collector-base voltage (IE = 0) 60V 80V
VCEO Collector-emitter voltage (lB = 0) 60V 80V
VEBO Emitter-base voltage (lc = 0) 5V
Ic Collector current 4A
IB Base current O,lA
P tot Total power dissipation at Tease";; 25 'C 40W
Tstg Storage temperature
Junction temperature
-65 to 150 'C
150 'C
T j
, For PNP devices voltage and current values are negative
MECHANICAL DATA
Dimensions in mm
10/82 508

THERMAL DATA
Rth I-case Thermal resistance junction-case max 3.13 'C/W
ELECTRICAL CHARACTERISTICS 0 (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff for MJE 700, MJE 701,
current (I E = 0) MJE 800, MJE 801
VCB = 60 V 100 fJ.A
VCB = 60 V Tease = 100°C 2 mA
for MJE 702, MJE 703,
MJE 802, MJE 803
VCB = 80 V 200 fJ.A
VCB = 80 V Tease = 100°C 2 mA
ICEO Collector cutoff for MJE 700, MJE 701,
current (lB = 0) MJE 800, MJE 801
VCE = 30 V 100 fJ.A
for MJE 702, MJE 703,
MJE 802, MJE 803
VCE = 40 V 500 fJ.A
lEBO Emitter cutoff VEB = 5 V 2 mA
current (lc = 0)
V CEO (sus)* Collector-emitter for MJE 700, MJE 701,
sustaining voltage MJE 800, MJE 801
(lB = 0) Ic = 50 mA 60 V
for MJE 702, MJE 703,
MJE 802, MJE 803
Ic = 50 mA 80 V
VCE (sat)* Collector-emitter for MJE 700, MJE 702,
saturation voltage MJE 800, MJE 802
Ic = 4 A IB = 40mA 2.7 V
for MJE 701, MJE 703,
MJE 801, MJE 803
Ic =2A IB = 40mA 2.8 V
509

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
VSE * Sase-emitter voltage for MJE 700, MJE 702,
MJE 800, MJE 802
Ic = 1.5 A VCE = 3 V
for MJE 701, MJE 703,
MJE 801, MJE 803
Ic =2A VCE = 3 V
hFE * DC current gain for MJE 700, MJE 702,
MJE 800, MJE 802
Ic = 4 A VCE = 3 V
for MJE 701, MJE 703,
MJE 801, MJE 803
Ic =2A VCE = 3V
hIe Small signal Ic = 1.5 A VCE = 3 V
current gain f = 1 MHz
2.5 V
2.5 V
110 -
750 -
1 -
* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
o For PNP devices voltage and current values are negative
For characteristic curves see the 2N 6034/2N 6039 series
510

MULTIEPITAXIAL BIPLANAR NPN
LINEAR AND SWITCHING APPLICATIONS
The MJE 13002 and MJE 13003 are silicon multi epitaxial biplanar transistors in TO-126
plastic package intended for linear and switching applications.
ABSOLUTE MAXIMUM RATINGS
VCSO
V CEO
V ESO
Ic
I CM (*)
Is
I SM (*)
Collector-base voltage (IE = OJ
Collector-emitter voltage (I S = OJ
Emitter-base voltage (I C = OJ
Collector current
Collector peak current
Base current
Base peak current
P tot Total power dissipation at T case < 25°C
Tamb< 25°C
Junction, Storage temperature
MJE13002 MJE13003
600V 700V
300V 400V
9V
1.5V
3A
0.75A
1.5A
40W
l.4W
-65 to 150°C
* Pulse width = 5msec., duty cycle < 10%.
INTERNAL SCHEMATIC DIAGRAM
"4'
E
MECHANICAL DATA
Dimensions in mm
e
(1) Wit\:lIn thIs regiOn ,t~~rOSS-$eCtiQn of the Ie-ads is uncontrolle-d
1.2
o.S8
4.4
TO-126 (SOT -321
511
10/82

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction- ambient
max. 3.12 °C/W
max. 89 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for MJE13002 V CES = 600V 1 rnA
current (V BE = 0) for MJE13003 V CES = 700V 1 rnA
T case = 100° C
for MJE13002 V CES = 600V 5 rnA
for MJE13003 V CES = 700V 5 rnA
lEBO Emitter cutoff V EB = 9V 1 rnA
current (lc = 0)
V CEo(susi Collector-emitter Ic = 10mA for MJE13002 300 V
sustaining voltage for MJE13003 400 V
V CE(sat) * Collector-emitter Ic = 0.5A IB 0.1A 0.5 V
saturation voltage Ic = 1A IB = 0.25A 1 V
Ic = 1.5A IB = 0.5A 3 V
Ic = 1A IB = 0.25A 1 V
T case = 100° C
VBE(Sat) * Base-emitter Ic = 0.5A IB = 0.1A 1 V
saturation voltage Ic = 1A IB = 0.25A 1.2 V
Ic = 1A IB = 0.25A 1.1 V
T case = 100°C
hFE * DC current gain Ic = 0.5A VCE = 2V 8 40 -
Ic = 1A VCE = 2V 5 25 -
fT Transition frequency VCE = 10V f = 1MHz 5 10 MHz
Ic = 100mA
CCBO Collector-base VCB = 10V 30 pF
capacitance
I I I
512

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min.
Typ.
Max. Unit
t, Rise time
ts Storage time
tf Fall time
Resistive load
Vee = 125V
Ie = 1A
lSI = -ls2 = 0.2A
0.24
1.7
0.5
1 p's
4 p.s
1 p's
tsv Voltage storage time Inductive load
Ie = 1A
tc Commutation time lSI = 0.2A
VSE(off) = 5V
L = 50mH Velamp = 300V
* Pulsed: pulse duration = 300 p.s, duty cycle = 2%
0.8
0.1
4 p's
0.75 p.s
Safe operating areas
IC
(A)
G - 48'2
-,
10
IC MAX PULSED
lCMAX CONT.
r--..
I 1\ \
\\
"'\.
D.C.OPERAT ION
~
MJE13003
\
"\. \
'\
jJ
I E13002r
"'
O.lms
I III
0.5ms_
1 ms
,
!
10
5 8 2
10
6 8
VCE (V)
513

~ ,
~- -
VCE
DC current gain
DC current gain
G I, 801
t---r+
t
i! III
,
• ~ 1
10 10
, 6' , 6'
IC IA)
10'
a
10
.
-
~~
1
E
~ ~-
~ 5 V
r----- .- I.'
~ F'" -.;:
t-----t
- ----- -
r- -
~-
Ii
=e- -
---'- ~-
T --
102 2 4 6 tI 10 1
j
1----;
I
.~
1-'\-'1
-~40'i::
2~f [
12S'C.
Ii
, 6 a
ICIA)
VeE(Sdl
I V)
0.6
Collector-emitter saturation voltage
)
II
hFE ~5
f-- ~ll
!
G lo802
veElsat
IV)
Collector-emitter saturation voltage
) I
I
I
I
G- "803
\
!
-
0.4
0.2
o
10'
--~
125 'C
-40'C
25' C
~
-1
10
~
')
l.J
:...-
05
o
.1
\
\
'eO.1A
I
10
\
\ 1\ \
\ \
\
\ \
1.SA
~ 1 A
QlA
osA] ['I
l- II
la lmA )
514

0.5
o
Base-emitter saturation voltage
j)
T
hFE: 5
-
-40·C
=
~~CI
I-- 12;.:5 Fr
-,
10
Pi,..-
p
V
-I
10
I
V
1,41
rJ
G 4 e 04
Ceso.
(pF) •
10
Collector-base capacitance
k:
f----p.... .- -
f----
f---- -- -
e--
1
III
--
.........
~ '----
w-~
, .........
• 10
-
G 480~
Saturated switch ing
(inductive load)
characteristics
~ VSE:O T,
l~----~---:-t-1
G_4606
(1':) =-- ---I---l--l--I--t-
4
-e-
~. _~~--:: ~ ___'LV_' ...
81=--------· - - -----:,--:-- -k:~;'"
:
6-- --~ +-- 1-' -
;;;~~~f_F~~~ i
Saturated switching characteristics
(inductive load)
1,
(/JS)' -------
1 -._-
1
I
t-~~---
·------1-----
8 ---------T-'-- ---
Vee .20V
z Vc lo1mp 1; 300"
L .50mH
h FE·5
515

( /JS)
Saturated switching characteristics
(inductive loadl
G_4B08
If 4 ~~_~ --~-"---1--~----,­
------------f------- ---
Saturated switch ing characteristics
(resistive load)
G 4'Og
-
I
(,.,01
vcc·2OOV ~-1=
hFE·5 f-
>;: ._- f---- lSI' -IS2 I--
-- r--
Is --
1----------- -------I-----b ~ j-...
1'.1'1'
f----- --
r--......
I--
-- - - f--I--
-- If
-
,",,-I- Ion ~
I-
- - ~v~
V
10-'
IC
(A)
Clamped reverse bias safe operating
areas
-, ,
G S 3
1-2
0-8
0.4
i
\
I
:
+~100.
IBI ~ lA
"'"
I
,
VBE(oft)5 v
j
MJE13002 ;:+\"
MJE13003
o 100 200 300 400 500 600 VCE (V)
516

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The MJE 13004/13005 are silicon multiepitaxial mesa NPN transistorJlrfJedec TO-220
plastic package particularly intended for switch-mode applications,{
ABSOLUTE MAXIMUM RATINGS
MJE13004 MJE13005
V CEV
VCEO
VEBO
Ic
ICM
IB
IBM
P tot
T stg
T j
Collector-emitter voltage
Collector-emitter voltage (I B'= 0)
Emitter-base (I c = 0)
Collector current
Collector peak current
Base cu trent
Base peak
Total power
Storage
Juncti
600V 700V
300V 400V
9V
4A
8A
2A
4A
75W
--65 to 150°C
150°C
INTER
MECHANICAL DATA
Dimensions in mm
Collector connected to tab,
kLJJi.
~~
517
10/82

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.67 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEv Collector cutoff for MJE13004
current (VBE = -1.5V) VCE=600V 1 mA
VCE=600V Tease = 100°C 5 mA
for MJE13005
VCE = 700V 1 mA
VCE = 700V T case = 100 D C 5 mA
lEBO Emitter cutoff VEB = 9V 1 mA
current (lc = 0)
VCEO(sus) Collector-emitter Ic = 10mA for MJE13004 300 V
sustaining voltage for MJE13005 400 V
(I B = 0)
V CE(sat) * Collector--emitter Ic = lA IB = 0.2A 0.5 V
saturation voltage Ic = 2A IB = 0.5A 0.6 V
Ic =4A IB = lA 1 V
V BE(sat) * Base-emitter Ic = lA IB = 0.2A 1.2 V
saturation voltage Ic = 2A IB = 0.5A 1.6 V
hFE DC current gain Ic = lA VCE = 5V 10 30 60 -
Ic = 2A VCE = 5V 8 40 -
ton Turn-on time 0.8 /1s
Ic = 2A
ts Storage time IBI = -IB2 = 0.4A 4 /1s
Vcc=250V
t f Fall time 0.9 /1s
* Pulsed: pulse duration = 300 /J.S, duty cycle = 1.5%.
518

Safe operating areas
Ie
(A)

VCE ( sat )
( V)
Collector-emitter saturation voltage
r L. 830
"
1\
\
I
~
,
i /' /' V
i 1"-,
1\
tt '\
-r \ !\.. I
\ ~,
\
\ r-.... "-" ..... r-...
IB(A)
I
i IC ~~
//' 2A
1A
~
-,
r-
v::v::: /' ,
i
,
VBE(sat )
(V)
1.5
0.5
Base-emitter saturation voltage
-~ TC o-i~:~
-- 125'C
f---
I
------ ,"
'\
-
'-
i
I"
V\..
~/
G t. 83 1
0.5
o
-,
10
)
Saturated switching characteristics
· '=t::
-,
10
'-f
--
·
L
I
' ,
- --- -
,-'- _ts
!
i
tt
ton
10
.-~-
G ~ e 3 2
!
Vcc,.iso\jhFE=
5
"+- 4- - I-
" i 1-
----'-+
',-' 4--J=-t
". -
I
:---+ r.L
IB2
=lTc
-T .. .)... ....
~"'-m
- ,--=~ .,,-
'-':~i""-'
!
-t---'--
-~
-+--+-i
1
I i I ; i
t
Ips )
10
-,
10
Saturated switching characteristics
I
..... ts
..............
Vee" 250V
hfE= 5
'82 ::-2IS1
Tc -125°C
--+-.
.
tt
,
/'
ton
,I"'""
............
"'"
·483
520

Saturated switching characteristics
Ie
(A )
Clamped reverse bias safe operating
areas
G· 4S 3 5 11
\
SEE TEST CI
CUlT
10'05 E>
't
Ion l..-·J· ....
Ie (A)
-1
10
2
10
VCE(clamp)(V)
Clamped ES/b test circuit
40V
500
}JH
TEST CONDITIONS;
5v;.I-VBB !;'2V
lc\IB ;.4
21 B1 ?I-IB21 ?IB1
tp =adjusted for
nominal Ie
RBB=adjusted for
IB2
5-5388
521

MULTIEPITAXIAL MESA NPN
MOTOR CONTROL, SWITCH REGULATORS
The MJE13006, MJE13007 and MJE13007A are silicon multi epitaxial m
They are mounted in Jedec TO-220 plastic package, intended
switching regulator's etc.
ABSOLUTE MAXIMUM RATINGS
V CEO
V CEV
V EBO
Ic
ICM
IB
IBM
IE
IEM
P tot
T stg
T j
Collector-emitter voltage (I B = 0)
Collector-emitter voltage
Emitter-base voltage (Ic = or
Collector current
Collector peak current
Base current
Base peak current
Emitter current
Emitter peak cu
Total power
Storage t
Juncti
400V
700V
9V
8A
16A
4A
8A
12A
24A
80W
-65 to 150°C
150°C
400V
850V
INTER
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
to.-22O
10/82 522

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.56 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IEso Emitter cutoff VES = 9V Ie = a 1 mA
current (I c = 0)
IcEv Collector cutoff V CEV = Rated value
current VSE(Off) = 1.5V 1 mA
V CEV = Rated value
VSE(off) = 1.SV
T case = 100"C 5 mA
V CEO (sus; Collector-emitter Ic = lamA Is =0
sustaining voltage for MJE13006 300 V
for MJE13007/13007A 400 V
VCE(sat) * Collector-emitter Ic =2A Is = O.4A 1 V
saturation voltage Ic =5A Is = lA 1.5 V
Ic =8A Is =2A 3 V
Ic =5A Is = lA
Tease = 100°C 2 V
VSE(sat) * Base-emitter Ic =2A Is = O.4A 1.2 V
saturation voltage Ic =5A Is = lA 1.6 V
Ic =SA Is = lA
Tease = 100°C 1.5 V
hFE * DC current gain Ic =2A VCE = SV 8 40 -
Ic =5A VCE = SV 6 30 -
fT Transition frequency Ic = 500mA VCE = 10V 4 MHz
f = 1MHz
COb Output capacitance Vcs = 10V IE = 0 110 pF
f = O.lMHz
ton Turn-on time
Vcc = 12SV Ic =5A
ts Storage time
IS1 = IS2 = 1A
tp = 25/J.s
Duty Cycle < 1 %
tf Fall time
* Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%.
1.1 /J.s
3 p.s
0.7 /J.s
523

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 29, TIl? 29A, TIP 29B and TIP 29C are silicon epitaxial-base NPN power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary PNP types are the TIP 30, TIP 30A, TIP 30B and TIP 30C.
ABSOLUTE MAXIMUM RATINGS
TIP 29 TIP 29A TIP 29B TIP 29C
VCBO Collector-base voltage (IE= 0)
VCEO Collector-emitter voltage (IB= 0)
VEBO Emitter-base voltage (Ic= 0)
Ic Collector current
ICM Collector peak current
IB Base current
Ptot Total power dissipation at Tease";; 25°(
Tamb ,,;;25°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC OIAGR:4 :
40V
40V
60V 80V
60V 80V
5V
1A
3A
O.4A
30W
2W
-65 to 150°C
150°C
100V
100V
MECHANICAL DATA
Dimensions in mm
·····~.:.220
5/80 524

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 4_17 °C/W
max 62_5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 29 and TIP 29A
current (16 = 0)
VCE = 30V
for TIP 29B and TIP 29C
VCE = 60V
ICES Collector cutoff for TIP 29 VCE = 40V
current (V6E = 0) for TIP 29A VCE = 60V
for TIP 29B
for TIP 29C
IE60 Emitter cutoff VE6 = 5V
current (Ic = 0)
VCEO (sus)* Collector-emitter Ic = 30mA
sustaining voltage for TIP 29
(16 = 0) for TIP 29A
for TIP 29B
for TIP 29C
VCE = 80V
VCE = 100V
Min. Typ. Max. Unit
0.3 mA
0.3 mA
0.2 mA
0.2 mA
0.2 mA
0.2 mA
1 mA
40 V
60 V
80 V
100 V
VCE (sat) * Collector-emitter
saturation voltage
Ic = 1A
16 = 125mA
0.7 V
V6E (on)* Base-emitter Ic = 1A VCE = 4V
voltage
hFE * DC current gain Ic = 0.2A VCE = 4V
Ic = 1A VCE = 4V
hIe Small signal Ic = 0.2A VCE = 10V
current gain
f = 1KHz
Ic = 0.2A
f = 1 MHz
VCE = 10V
1.3 V
40 -
15 75 -
20 -
3 -
* Pulsed: pulse duration = 300J-ts, duty cycle ~2%.
525
I ·~
!,j

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 30, TIP 30A, TIP 30B and TIP 30C are silicon epitaxial-base PNP power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary NPN types are the TIP 29, TIP 29A, TIP 29B and TIP 29C
respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 30 TIP30A TIP30B TIP30C
VCBO
VCEO
V EBO
Ie
leM
IB
Ptot
Collector-base voltage (IE = 0) -40V
Collector-emitter voltage (IB = 0) -40V
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
-60V -80V -100V
-60V -80V -100V
-5V
-1A
-3A
-O.4A
30W
2W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
5/80 526

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 4.17 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Co Ilecto r-cutoff for TIP 30 and TIP 30A
current (IB = 0) VCE = -30V
for TIP 30B and TIP 30e
VCE = -60V
ICES Collector cutoff for TIP 30 VeE = -40V
current (VBE = 0) for TIP 30A VeE = -60V
for TIP 30B VCE = -80V
for TIP 30e VCE = -100V
lEBO Emitter cutoff VEB = -5V
current (Ie = 0)
VCEO (sus)*Collector-emitter Ic = -30mA
sustaining voltage for TIP 30
(IB = 0)
for TIP 30A
for TIP 30B
for TIP 30e
VCE (sat)* Collector-emitter Ic = -1A; IB = -125mA
saturation voltage
VBE (on)* Base-emitter Ic = -1A VCE = -4V
voltage
hFE * DC current gain Ic = -0.2A VCE = -4V
Ie = -1A VCE = -4V
hIe Small signal Ic = -0.2A VCE = -10V
current gain f = 1 KHz
Ic = -0.2A VCE = -10V
f = 1 MHz
Min. Typ. Max. Unit
-0.3 mA
-0.3 mA
-0.2 mA
-0.2 mA
-0.2 mA
-0.2 mA
-1 mA
-40 V
-60 V
-80 V
-100 V
-0.7 V
-1.3 V
40 -
15 75 -
20 -
3 -
* Pulsed: pulse duration = 300JLs, duty cycle :;;;;2%.
527

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 31, TIP 31A, TIP 318 and TIP 31 C are silicon epitaxial-base NPN power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary PNP types are the TIP 32, TIP 32A, TIP 328 and TIP 32C.
ABSOLUTE MAXIMUM RATINGS
TIP31 TIP31A TIP31B TIP31C
VCSO Collector-base voltage (IE = 0) 40V
V CEO Collector-emitter voltage (Is = 0) 40V
VESO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak cu rrent
Is 8ase-cu rrent
Ptot Total power dissipation at Tease ~25°C
Tamb ~25°C
Tstg Storage temperature
T j Junction temperature
60V 80V
60V 80V
5V
3A
5A
1A
40\1\,
2W
-65 to 150°C
150°C
100V
100V
INTERNAL SCHEMATIC DIAGR~4'
MECHANICAL DATA
, ,
, '

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 3.12 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 31 and TIP 31A
current (IB = 0) VCE = 30V
for TIP 318 and TIP 31C
VCE = 60V
ICES Collector cutoff for TIP 31 VCE = 40V
current (VBE = 0) for TIP 31A VCE = 60V
for TIP 318 VCE = 80V
for TIP 31C VCE = 100V
lEBO Emitter cutoff VEB = 5V
current (Ic = 0)
V CEO (sus) * Co Ilector-em itter Ic = 30mA
sustaining voltage for TIP 31
(lB = 0)
for TIP 31A
for TIP 318
for TIP 31C
VCE (sat)* Collector-em itter Ic = 3A IB = 375mA
saturation voltage
VBE (on)* Base-emitter Ic = 3A VCE = 4V
voltage
hFE * DC current gain Ic = 1A VCE = 4V
Ic = 3A VCE = 4V
hIe Small signal Ic = 0.5A VCE = 10V
current gain f = 1KHz
Ic = 0.5A VCE = 10V
f = 1 MHz
Min. Typ. Max. Unit
0.3 rnA
0.3 rnA
0.2 rnA
0.2 rnA
0.2 rnA
0.2 rnA
1 rnA
40 V
60 V
80 V
100 V
1.2 V
1.8 V
25 -
10 50 -
20 -
3 -
* Pulsed: pulse duration = 300JLs, duty cycle 0;;;2%.
529

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 32, TIP 32A, TIP 328 and TIP 32C are silicon epitaxial-base PNP power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary NPN types are the TIP 31, TIP 31A, TIP 318 and TIP 31 C.
ABSOLUTE MAXIMUM RATINGS
TIP32 TIP32A TIP32B TIP32C
VC60
VCEO
VE60
Ic
ICM
16
Ptot
Collector-base voltage (lc = 0) -40V
Collector-emitter voltage (16 = 0) -40V
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
8ase-cu rrent
Total power dissipation at Tease ~ 25°C
Tamb ~25°C
Storage temperature
Junction temperature
-60V -80V -100V
-60V -80V -100V
-5V
-3A
-5A
-1A
40W
2W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DlAGR~~:
MECHANICAL DATA
Dimensions in mm
5/80 530

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 3.12 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 32 and TIP 32A
current (Is = 0) VCE = -30V
for TIP 328 and TIP 32C
VCE = -60V
ICES Collector cutoff for TIP 32 VCE = -40V
current (VSE = 0) for TIP 32A VCE = -60V
for TIP 328 VCE = -80V
for TIP 32C VCE = -100V
IESO Emitter cutoff VES = -5V
current (Ic = 0)
V CEO (sus)'Collector-em itter Ic = -30mA
sustaining voltage for TIP 32
(Is = 0)
for TIP 32A
for TIP 328
for TIP 32C
.
VCE (sat) Collector-emitter Ic = -3A Is = -375mA
saturation voltage
.
VSE (on) Base-emitter Ic = -3A VCE = -4V
voltage
hFE DC current gain Ic = -1A VCE = -4V
Ic = -3A VCE = -4V
hfe Small signal Ic = -0.5A VCE = -10V
current gain f = 1 KHz
Ic = -0.5A VCE = -10V
f = 1 MHz
Min. Typ. Max. Unit
-0.3 rnA
-0.3 rnA
-0.2 rnA
-0.2 rnA
-0.2 rnA
-0.2 rnA
-1 rnA
-40 V
-60 V
-80 V
-100 V
-1.2 V
-1.8 V
25 -
10 50 -
20 -
3 -
• Pulsed: pulse duration = 300JLs, duty cycle ~2%.
531

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 41, TIP 41A, TIP 41 B, and TIP 41 C are silicon epit~xial-base NPN power
transistors in Jedec TO-220 plastic package intended for use in medium power
linear and switching applications.
The complementary PNP types are the TIP 42, TIP 42A, TIP 42B and TIP 42C
respectively.
ABSOLUTE MAXIMUM RATINGS
TIP41
TIP41A TIP416 TIP41C
VCSO Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (Is = 0)
VEBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current
Is Base current
Ptot Total power dissipation atTcase~25°C
Tamb~25°C
Tst9 Storage temperature
T j Junction temperature
40V
40V
60V 80V
60V 80V
5V
6A
10A
3A
65W
2W
-65 to 150°C
150°C
100V
100V
INTERNAL SCHEMATIC DIAGR~~
MECHANICAL DATA
Dimensions in mm
5/80 532

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.92 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max Unit
ICEO Collector cutoff for TIP41 and TIP41A
current (Is = 0) VCE = 30V 0.7 mA
forTIP41B and TIP41C
VCE = 60V 0.7 mA
ICES Collector cutoff forTIP41 VCE = 40V 0.4 mA
current (VSE = 0) forTIP41A VCE = 60V 0.4 mA
forTIP41B VCE = 80V 0.4 mA
forTIP41C VCE = 100V 0.4 mA
IESO Emitter cutoff VES = 5V 1 mA
current (Ic = 0)
VCEO(SUS) * Collector-emitter Ic = 30mA
sustaining voltage for TIP41 40 V
(Is = 0) forTIP41A 60 V
forTIP41B 80 V
forTIP41C 100 V
VCE (sat) * Collector-em itter Ic = 6A Is = 0.6A 1.5 V
saturation voltage
VSE * Base-emitter Ic = 6A VCE = 4V 2 V
voltage
hFE * DC current gain Ic = 0.3A VCE = 4V 30 -
Ic = 3A VCE = 4V 15 75 -
hIe Small signal Ic = 0.5A VCE = 10V
current gain f = 1KHz 20 -
f = 1MHz 3 -
* Pulsed: pulse duration = 300J.ts, duty cycle ~ 2%
533

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 42, TIP 42A, TIP 42B and TIP 42C are silicon epitaxial-base PNP power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary NPN types are the TIP41, TIP 41A, TIP41B and TIP41C
respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 42 TIP 42A TIP 428 TIP 42C
Veso Collector-base voltage (IE = 0) -40V
P tot Total power dissipation at Tease ~25°C
VeEO Collector-emitter voltage (Is = 0) -40V
VESO
Ie
ICM
Is
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Storage temperature
Junction temperature
Tamb ~25°C
-60V -80V -100V
-60V -80V -100V
-5V
-6A
-10A
-3A
65W
2W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR~~
MECHANICAL DATA
Dimensions in mm
5/80 534

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.92 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 42 and TIP 42A
current (IB = 0) VCE = -30V
for TIP 428 and TIP 42C
VCE = -60V
ICES Collector cutoff for TIP 42 VCE = -40V
current (V BE = 0) for TIP 42A VCE = -60V
for TIP 428 VCE = -80V
for TIP 42C VCE = -100V
lEBO Emitter cutoff VEB = -5V
current (Ic = 0)
VCEO (Sus)*Coliector-emitter Ic = -30mA
sustaining voltage for TIP 42
(IB = 0)
for TIP 42A
for TIP 428
for TIP 42C
VCE (sat) * Collector-emitter Ic = -6A IB = -0.6A
saturation voltage
VBE (on)* Base-emitter Ic = -6A VCE = -4V
voltage
hFE * DC current gain Ic = -0.3A VCE = -4V
Ic.= -3A VCE = -4V
hie Small signal Ic = -0.5A VCE = -10V
current gain f = 1KHz
Ic = -0.5A VCE = -10V
f = 1 MHz
* Pulsed: pulse duration = 300I-l-S, duty cycle :;::;2%.
535
Min. Typ. Max. Unit
-0.7 rnA
-0.7 rnA
-0.4 rnA
-0.4 rnA
-0.4 rnA
-0.4 rnA
-1 rnA
-40 V
-60 V
-80 V
-100 V
-1.5 V
-2 V
30 -
15 75 -
20 -
3 -
I.

MULTIEPITAXIAL PLANAR NPN
LINEAR AND SWITCHING APPLICATIONS
The TIP47 to TIP50 are silicon mtltiepitaxial planar transistors in
intended for linear and switching applications.
tic package
ABSOLUTE MAXIMUM RATINGS
TIP49
TIP50
V CBO
V CEO
VEBO
Ic
ICM
IB
Ptot
P tot
T stg
T j
Collector base voltage (I E = 0)
Collector emitter voltage (I B '= 0
Emitter base voltage (lc = 0)
Collector current
Collector peak curren
Base current
Total power diss'
Total power
Storage t
Junct'
450V 500V
300V 350V 400V
5V
1A
2A
0.6A
40W
2W
-65 to 150°C
150°C
INTER
MATIC DIAGRAM
'4:
MECHANICAL DATA
Dimensions in mm
10/82 536

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max. 3.125 0 C/W
max. 62.5 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for TIP47 VCE = 350V 1 rnA
current (V BE = 0) for TIP48 VCE = 400V 1 rnA
for TIP49 VCE = 450V 1 rnA
for TIP50 VCE = 500V 1 rnA
I CEO Collector cutoff for TIP47 VCE = 150V 1 rnA
current (I B = 0) for TIP48 VCE = 200V 1 rnA
for TIP49 VCE = 250V 1 rnA
for TIP50 VCE = 300V 1 rnA
lEBO Emitter cutoff V EB = 5V 1 mA
current (lc = 0)
V CEO(sus) Collector emitter Ic = 30mA for TIP47 250 V
sustaining voltage for TIP48 300 V
for TIP49 350 V
for TIP50 400 V
V CE(sat) * Collector emitter Ic = lA Is = 0.2A 1 V
saturation voltage
VBE(on) * Base emitter Ic = lA VCE = 10V 1.5 V
on voltage
537
I ·.~.l
t4
I· .. I '.·.'
i'I' I:
'I
I~

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
hFE * DC current gain Ie = 0.3A VeE = 10V
Ie = 1A VeE = 10V
fT Transition frequency VeE = 10V Ie = 0.2A
f = 2MHz
h fe Small signal VeE = 10V Ie = 0.2
current gain
f = 1 KHz
30 150 -
10 -
10 MHz
25 -
* Pulsed: pulse duration = 300 IlS duty cycle';; 2%.
Safe operating areas
Ic 8
(A)G
IC MAX PULSED
ICMAX CONT.
i
,,\ r\
.. ~.-.....L
DC OPER TION
~
" \
~ '/1\
10-1
8
10
O.lms
O.5ms
lms
-X V TIP 50
- TIP4!j
- TIP48
T IP4?
6 8
VCE(V)
538

"
10
DC current gain
e--
c---
~
--
f---
-2
10
! .i
b jet '
~-t
~;t~f
I
--
T _ ".
~"
I
Ii
II
8 _,
10
'.....
!\
,
e-
F=f=
F--"
f-H-
;11
-t
t
j I II
tt: --
tt -
H-
-
G - 4800
f m
I it'
i
' '
- ~F+m
+-----t--tttt
t-n-P+
! !:.'
~
'\.'\1 40'C b:
'\.)25'C
'\ 1jS'C iii
, '8
IC (A)
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat
(V)
0.6
)
I I I
hFE = S I
I
I
G I, 802
~
VCE(sa!
(V)
) ,
I I
I
G 4803
0.4
0.2
o
125 'c
-40'C
25'C
'\
[)
~
~ ......
-,
10
0.5
o
\
~ 1\ \
\ \
\ \
\ \
\
"
IC -O.lA 0.3A
10
l.SA
1 A
O.5Alll
l- II
539

---~
~~---
--t++-j
VC:(sat )
i I
(V)
hFE~ 5
0.5
o
Base-emitter saturation voltage
- 40'C
=
25'C
_,4
~ 12:,:5
-2
10
Vl,..-
P
V
-,
10
1
I
I
-1
IN
f1
G-l,B (,
i
1
IC(A)
CCBO 8 1---
(pF) 8
10
Collector-base capacitance
-+-H Itt I -
........
-...L
~- I' k. .~
! I ,..........4
r-J t-'li l
G 4805
--t-, I,
'l ~tl t-1-r'
'I I, I I \ I~ .......... i . I
I--- -1-1
I I
1 I Til
11 !
III III
• 10
4 6'
10'
4 6.
VCB(V)
i
i
1
I
Saturated switching characteristics
(inductive load)
G _80,
I
4e--- I-----J
-+-1---
1--- -1
~ VBCO
, --,-
10-1
I
-
~----. I--~
8 +-- i--
rl
l-ffff
J-=?Y.
-----~
I--
Ef;J.-
,
-5V +
1------- ._-
41-------
VCC~20V ~
1 Vclamp =300V _
---~
L ~50mH
h fE=5
I
I--
I
te
Cps) I,
Saturated switching characteristics
(inductive load) 0-4807
I----~f----
Ti I !
,---~~--f----L- I --t-
-I-+-
I
I
l--
-.--
1= I---
,I-- -
,~----=- f--cc--.:- VBE~O '___
~
2V V
41-- .......... --.....:::: .A
~ ............ ~
VCC =20V
"""-..~ --i-'"
-5V.... ~l--
2 Vclamp= 300V 1--.
L=50mH
hFE'5
10- 1
540

Saturated switching
(inductive load)
,~==t
--
, -
f------ i----
kT
Vee =20V ....... ~
2 Vclamp=300V
L=50mH
h FE=5
characteristics
.- -- --
TT
VBe O
G 4808
~
~
~
I-S ~-+-
j---'-
I
--~
---. --i
-f.-'
--~
--2V ..... ~
+
Saturated switching characteristics
(resistive load)
t~====~====T==+==~~~~
(I's)
10- 1
8
Ie (A)
Ie
IA) ,_
Clampled reverse bias
safe operating areas
10-'L---------L-~~L-_~~~~~ ____ ~
10'
541

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The TIP51, TIP52, TIP53, TIP54 are silicon multiepitaxial mesa NPi'J t
plastic package.,
They are intended for high voltage, fast switching industrial and ~.
ABSOLUTE MAXIMUM RATINGS TlP53 TIP54
V CES
V CEO
V ESO
Ic
ICM
Is
P tot
T stg
T j
Collector-emitter voltage (V~
Collector-emitter voltage (I s
Emitter-base voltage (I C
Collector current
Collector peak c
Base current
Total p
Stora
Ju
400V 450V
300V 350V
5V
3V
5A
0.6A
100W
-65 to 150°C
150°C
500V
400V
INTER
• EMATIC DlAG~~,
MECHANICAL DATA
E
Dimensions in mm
10/82 542

THERMAL DATA
R!h j-case Thermal resistance junction-case max. 1.25 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector -cutoff for TIP51 VCE = 350V 1 mA
current (V BE = 0) for TlP52 VCE = 400V 1 mA
for TlP53 VCE = 450V 1 mA
for TlP54 VCE = 500V 1 mA
I CEO Collector cutoff for TIP51 VCE = 150V 1 mA
current (I B = 0) for TlP52 VCE = 200V 1 mA
for TIP53 VCE = 250V 1 mA
for TIP54 VCE = 300V 1 mA
lEBO Emitter cutoff V EB = 5V 1 mA
current (Ic = 0)
VCEo(susi Collector-emitter Ic = 30mA for TIP51 250 V
sustaining voltage for TIP52 300 V
(I B = 0) for TlP53 350 V
for TIP54 400 V
VCE(sa!) * Collector-emitter Ic = 3A IB = 0.6A 1.5 V
saturation voltage
V SE * Base-emitter Ic =3A VCE = 10V 1.5 V
hFE * DC current gain Ic = 0.3A VCE = 10V 30 150 -
Ic =3A VCE = 10V 10
hfe Small signal Ic=0.2A; VCE=10V;f=lKHz 30 -
current gain Ic=0.2A; VCE=10V;f=lMHz 2.5 -
543

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
ES/ b Second breakdown V BE = 20V RBE =100n
Un clamped energy L = 30mH
ton Turn-on time Ie = 1A IBI = 100mA
Vee = 200V
toff Turn-off time Ie = 1A lSI = -IB2= 100mA
Vee = 200V
100 mJ
0.2 Ils
2 Ils
* Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%
Safe operating areas
Ie B
(A) 6
4
I
G - 4796
10
10-2
I
i
j
I
i
===i Ie MAX PULSED 1=:::j PULSE PERATION *
.-
---11eMAX eONT. I
i
. I
lO,us
100,us
lms
I
5ms
D.C-OPERATION -
'"
I
\.
iii
I
~~ I
*FOR SINGLE NON ;"
REPETITIVE PULSE ,-r-- TIP 51
'\
~ \
'\.i'
II I I TIP 52-
TIP 53
I II II
TIP 54
6 8
10
I
544

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The TIP 100, TIP 101 and TIP 102 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package,
intended for use in power linear and switching applications.
The complementary PNP types are the TIP 105, TIP 106 and TIP 107 respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 100 TIP 101 TIP 102
VCSO
VCEO
VESO
Ic
ICM
Is
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
60V 80V 100V
60V 80V 100V
5V
8A
15A
1A
80W
2W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
545
5/80

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.56 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICED Collector cutoff for TIP 100 VCE = 30V
current (IB = 0) for TIP 101 VCE = 40V
for TIP 102 VCE = 50V
ICBO Collector cutoff for TIP 100 VCB = 60V
current (IE = 0) for TIP 101 VCB = SOV
for TIP 102 VCB = 100V
Min. Typ. Max. Unit
50 p.,A
50 p.,A
50 p.,A
50 p.,A
50 p.,A
50 p.,A
lEBO Emitter cutoff VEB = 5V
current (Ic = 0)
S
rnA
VCEO (sust Collector-emitter Ic = 30mA
sustaining voltage for TIP 100
(IB= 0) for TIP 101
for TIP 102
VCE (sat)* Collector-emitter Ic = 3A 18 = 6mA
saturation voltage Ic = SA 18 = SOmA
VBE * Base-emitter Ic = SA VCE = 4V
voltage
hFE * DC current gain Ic = 3A VCE = 4V
Ic = SA VCE = 4V
VF* Forward voltage IF == -Ic = 10A
of commutation
diode (18 = 0)
60 V
SO
V
100 V
2 V
2.5 V
2.S V
1000 20000 -
200 -
2.S V
* Pulsed: pulse duration = 300p.,s, duty cycle ",,2%.
546

EPITAXIAL·BASE PNP
POWER DARLINGTONS
The TIP 105, TIP 106 and TIP 107 are silicon epitaxial-base PNP transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package
intended for use in power linear and switching applications.
The complementary NPN types are the TIP 100, TIP 101 and TIP 102 respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 105 TIP 106 TIP 107
VCBO
VCEO
VEBO
Ic
ICM
IB
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
-60V -80V -100V
-60V -80V -100V
-5V
-8A
-15A
-1A
80W
2W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
.1Ji. 0.5 ~. ~.l.
TO-220
547
5/80

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.56 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 105 VCE = -30V
current (IB = 0) for TIP 106 VCE = -40V
for TIP 107 VCE = -50V
ICBo Collector cutoff for TIP 105 VCB = -60V
cu rrent (IE = 0) for TIP 106 VCB = -SOV
for TIP 107 VCB = -100V
lEBO Emitter cutoff VEB = -5V
current (Ic = 0) ,
VCEO (sus)*Coliectorcemitter Ic = -30mA
sustaining voltage for TIP 105
(lB = 0) for TIP 106
for TIP 107
VCE (sat) * Collector-emitter Ic = -3A IB = -6mA
saturation voltage Ic = -SA IB = -SOmA
VBE (on)* Base-emitter Ic = -SA VCE = -4V
voltage
hFE * DC current gain Ic = -3A VCE = -4V
Ic = -SA VCE = -4V
Min. Typ. Max. Unit
-50 /-LA
-50 /-LA
-50 /-LA
-50 /-LA
-50 /-LA
-50 /-LA
-S mA
-60 V
-SO
V
-100 V
-2 V
-2.5 V
-2.S
1000 20000 -
200 -
V
VF* Forward voltage IF = -Ic = -10A
of commutation
diode (lB = 0)
* Pu Ised: pu Ise duration = 300/-Ls, duty cycle ~ 2 %.
548
-2.S
V

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The TIP 110, TIP 111 and TIP 112 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in medium power linear and switching applications.
The complementary PNP types are the TIP 115, TIP 116 and TIP 117 respectively.
ABSOLUTE MAXIMUM RATINGS
VCSO Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (Is = 0)
VESO Emitter-base voltage (Ic = 0)
Ic Collector current
leM Collector peak current
Is Base current
Ptot Total power dissipation at Tease :::::25°C
Tamb :::::25°C
T stg Storage temperature
T j Junction temperature
TIP 110 TIP 111 TIP 112
60V 80V 100V
60V 80V 100V
5V
2A
4A
50mA
50W
2W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
TO-220
549
5/80

THERMAL DATA
Rthj-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 2.S °C/W
max 62.S °C/W
ELECTRICAL CHARACTERISTICS (Tease = 2SoC unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 110 VCE = 30V
current (IB = 0) for TIP 111 VCE = 40V
for TIP 112 VCE = SOV
ICBO Collector cutoff for TIP 110 VCB = 60V
current (IE = 0) forTIP111 VCB = SOV
for TIP 112 VCB = 100V
lEBO Emitter cutoff VEB = SV
current (Ic = 0)
VCEO (Sus)*Coliector-emitter Ic = 30mA
sustaining voltage for TIP 110
(lB= 0) for TIP 111
for TIP 112
VCE (sat)* Collector-emitter Ic = 2A IB = SmA
saturation voltage
VBE (on)* Base-emitter Ic = 2A VCE = 4V
voltage
hFE * DC current gain Ic = 1A VCE = 4V
Ic = 2A VCE = 4V
Min. Typ. Max. Unit
2 mA
2 mA
2 mA
1 mA
1 mA
1 mA
2 mA
60 V
SO
V
100 V
2.S V
2.S V
1000 -
SOO -
* Pulsed: pulse duration = 300Il-S, duty cycle :0:::;2%.
550

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The TIP 115, TIP 116 and TIP 117 are silicon epitaxial-base PNP transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in medium power linear and switching applications.
The complementary NPN types are the TIP 110, TIP 111 and TIP 112 respectively.
ABSOLUTE MAXIMUM RATINGS
TIP115 TIP116 TIP117
VCSO
VCEO
VEBO
Ic
ICM
Is
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;25°C
Tamb :::;25°C
Storage temperature
Junction temperature
-60V -80V -100V
-60V -80V -100V
-5V
-2A
-4A
-50mA
50W
2W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
10.4"""
TO..,220
551
5/80

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 2.5 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEO Collector cutoff for TIP 115 VCE = -30V -2 mA
current (Is = 0) for TIP 116 VCE = -40V -2 mA
forTIP117 VCE = -50V -2 mA
Icso Collector cutoff forTIP115 Vcs = -60V -1 mA
cu rrent (IE = 0) for TIP 116 Vcs = -SOV -1 mA
for TIP 117 Vcs = -100V -1 mA
lEBO Emitter cutoff VEB = -5V -2 mA
current (Ic = 0)
VCEO (Sus)*Collector-emitter Ic = -30mA
sustaining voltage for TIP 115 -60 V
(Is = 0) forTIP116 -SO V
for TIP 117 -100 V
VCE (sat)* Collector-emitter Ic = -2A Is = -SmA -2,5 V
saturation voltage
VSE (on)* Base-emitter Ic = -2A VCE = -4V -2.S V
voltage
hFE * DC current gain Ic = -1A VCE = -4V 1000 -
Ic = -2A VCE = -4V 500 -
* Pulsed: pulse duration = 300l1-s, duty cycle ~2%.
552

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The TIP 120, TIP 121 and TIP 122 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in power linear and switching applications.
The complementary PNP types are the TIP 125, TIP 126 and TIP 127 respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 120 TIP 121 TIP 122
VCBO
VCEO
VEBO
Ie
leM
IB
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
60V 80V 100V
60V 80V 100V
5V
5A
8A
0.1A
65W
2W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
Col.leClor connected to tab.
TO-220
553
10/82

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.92 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 120 VCE = 30V
current (IB = 0) for TIP 121 VCE = 40V
for TIP 122 VCE = 50V
IcBo Collector cutoff for TIP 120 VCB = 60V
current (IE = 0) for TIP 121 VCB = 80V
for TIP 122 VCB = 100V
lEBO Emitter cutoff VEB = 5V
current (Ic = 0)
VCEO (sus) *Collector-emitter Ic = 30mA
sustaining voltage for TIP 120
(IB = 0) for TIP 121
for TIP 122
VCE (sat)* Collecto r-em itter Ic = 3A IB = 12mA
saturation voltage Ic = 5A IB = 20mA
VBE (on)* Base-emitter Ic = 3A VCE = 3V
voltage
hFE * DC current gain Ic = 0.5A VCE = 3V
Ic = 3A VCE = 3V
Min. Typ. Max. Unit
0.5 mA
0.5 mA
0.5 mA
0.2 mA
0.2 mA
0.2 mA
2 mA
60 V
80 V
100 V
2 V
4 V
2.5 V
1000 -
1000 -
* Pulsed: pulse duration = 300lts, duty cycle :::;2%.
554

~.
Safe operating areas
IC
( A)
10
I I I I II II
G - 4750
Iii I
. 1 < ,
*PUILSE O~~R~W~
1
IC MAX (PULSED)f =--~
=10t's
~-
100}Js
I C MAX (CONTINUOUS)'" \1\
f---+ . ~ , I 1_1 I
__L111illH ' "'1\.\ \
~_+ ,i Iii I I\. lms
*FOR SINGLE NON \
\\ i '
REPETITIVE PULSE
I-~"
-----+--------+-
I
--+--+" t
-r-----+--t
-----+-
I-- ,
I
I
I
10ms
- 1
10
! ! I --
TIP120-
II
TIP121
• ! I I I TIPl22
I
I---f-
I
I I ' I
I
I
: ill i
10
: I
2
10 "CE (V)
DC current gain
DC current gain
G-47S2
G "7 S3
,
,
,
8 b
,
,
:11
10 8F==d~ 150'C
10
8
,
'r
,
-1
10
I
125·C
VCP 3V
1- 55·Cr--.,
'I
1
, '8
I
1
1
10
i
I
IC (A)
,
10 8
,
'~~
8
,
,
8
,
,
-1
10
I
, '8
I
VCE:3V
'1\
++
1,1 I
I
, , 8
MAX.
yp.
MIN.
1
10 IC (A)
555

VCE[sat )
[V)
Collector-emitter saturation voltage
T j
2 •
G "754
VBE(on )
(V) •
Base-emitter voltage
G 4755
2.6
IC:
lA
2A
3A 4A 6A
\ \
1\
VCE =3V
11
2.2
0.6
-,
10
I'..
10
-,
10
----t- v , .
IC (A)
1.8
1.4
\
Base--emitter saturation voltage
G ,,756
V BE(sat )
[V)
VCE(s.at )
[V) 6
-
Collector-emitter saturation voltage
G 4757
hFE = 250
hFE = 250 ,
----
2
I
1
-~ f-""j
i
10
--t- +-t
I
--
! i : vI-'
-,
10
I
-,
10
I
,
-tt ,
----
. , 6 •
10 IC [A)
556

Collector cutoff current
Collector base capacitance
b
)
G 1.159
- -
10
10
8
............
..:.: II
..... "
-2
10
- 0.4 -0.2 a 0.2 0.4 0.6 0.8
I
10
Satu rated switch i ng characteristics
Vcc~ 30V f-.-... -+------+--­
hFE~250
- lb1~lb2
------j.---.~--
557

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The TIP 125, TIP 126 and TIP 127 are silicon epitaxial-base PNP transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in power linear and switching applications.
The complementary NPN types are the TIP 120, TIP 121 and TIP 122 respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 125 TIP 126 TIP 127
VCBO
VCEO
VEBO
Ic
ICM
IB
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;25°C
Tamb :::;25°C
Storage temperature
Junction temperature
-60V -80V -100V
-60V -80V -100V
-5V
-5A
-8A
-0.1A
65W
2W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
10/82 558

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resisfanqe junction-ambient
max 1.92 °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 125 VCE = -30V
current (IB = 0) for TIP 126 . VCE = -40V
for TIP 127 VCE = -50V
ICBO Collector cutoff for TIP 125 VCB = -60V
current (IE = 0) for TIP 126 VCB = -80V
for TIP 127 VCB = -100V
lEBO Emitter cutoff VEB = -5V
current (Ic = 0)
VCEO (sus)'Coliector-emitter Ic = -30mA
sustaining voltage for TIP 125
(lB =-0) for TIP 126
for TIP 127
VCE (sat) , Collector-emitter Ic = -3A IB = -12mA
saturation voltage Ic = -5A IB = -20mA
,
VSE (on)
Base-emitter Ic = -3A VCE = -3V
voltage
hFE , DC current gain Ic = -0.5A VCE = -3V
Ic = -3A VCE = -3V
Min. Typ. Max. Unit
-0.5 mA
-0.5 mA
-0.5 mA
-0.2 mA
-0.2 mA
-0.2 mA
-2 mA
-60 V
-80 V
-100 V
-2 V
-4 V
-2.5 V
1000 -
1000
'Pulsed: pulse duration = 300ILS, duty cycle~ 2 %.
559

Safe operating areas
Ie
(A)
G ~ 770
I i I III
--~-
II II 1 I I I 111'1
I * PULSE OPERATION
10 ~1-~I~e~M3A§X§I(P~UIL3S~E§D§):n;~-~f~-fffffj-S-~1j-~--::---4--
~ . 10 fJ 5j
~MAX (eONTINuO~t5'" 1\ 1\ , _--~~~~_~
I---_f--+----

Base-emitter voltage
Collector-emitter saturation voltage
2---- ,I
I
'I'
II :1
, ,
Ie (AI
VCE(sat I
(V I
.,
10
i
IC' j 1A I 2A
I
T j "25"C
I
,
I
]
]
I
I
I
i
I
"
, I
I
I
I
I
I !I
-
."'-
No ' , I
2A
li
'\ I '
I
G ~ 765
I II \ I! I
\ 6 A II '
4 A ,I
\
"
I,
I'
I \.1 I
fIT
I I
I]
-
i
I
I
I,
I
Ii i I
10
i
VSE(on I
(V)
6
1
Base-emitter saturation voltage
,
i
I
I
, VCE ", J V
I
G 065
I I , i ! I
.1, I
~
:
A'
, c-l-f-!-
, I I" ,
I! I:
, I
I'
Collector-emitter saturation voltage
~.,-
l+-
-,
10
I
I
I
I ' i
: I I
1
, ! i I
I
j
I
;
i l ,
! I
I ill
Lll~
i 1
i
,
, e
IC (AI
.,
10
6 ,
IC (AI
561

"
Collector cutoff current
'0.4+0.2 0 -0.2-0.4-0.6-0.8 -I -1.2 VSE(V)
Collector base capacitance
C ib '.-
Cob
(pF )~.:. f'-~
,
I--. L---
~
I--
i
---+--!
2?t
10 8
----'--1-.
---.:....-c
1=1= !$F- cct:
rt m-
i, I': I
'i
i
i
c;.,-HI -.
-
~ .~
I
.1 r--. H'!
, ~ ! ' , :
l~i'1
i
.1-+ f-

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The TIP130, TIP131 and TIP 132 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package
intended for use in power linear and switching applications.
The complementary PNP types are the TIP 135, TIP 136 and TIP 137 respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 130 TIP 131 TIP 132
VCSO
VCEO
V ESO
Ie
ICM
Is
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ,;;;25°C
Tamb ,;;;25°C
Storage temperature
Junction temperature
60V 80V 100V
60V 80V 100V
5V
8A
12A
0.3A
70W
2W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
10.4ma~
TO-220
563
5/80

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.78 °C/W
max 62.S °C/W
ELECTRICAL CHARACTERISTICS (Tease "= 2SoC unless otherwise specified)
Parameter
Test conditio'ns
Min. Typ. Max. Unit
ICEO Collector cutoff for TIP 130 • VCE = 30V
current (Is = 0) for TIP 131 VCE = 40V
for TIP 132 VCE = SOV
O.S
O.S
O.S
rnA
mA
mA
Icso Collector cutoff for TIP 130 Vcs = 60V
current (IE = 0) for TIP 131 ·

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The TIP 135, TIP 136 and TIP 137 are silicon epitaxial-base PNP transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in power linear and switching applications.
The complementary NPN types are the TIP 130, TIP 131 and TIP 132 respectively.
ABSOLUTE MAXIMUM RATINGS
TIP 135 TIP 136 TIP 137
VCBO
VCEO
VEBO
Ic
ICM
IB
P tot
T stg
Tj
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ",,25°C
Tamb ",,25°C
Storage temperature
Junction temperature
-60V -SOV -100V
-60V -SOV -100V
-5V
-SA
-12A
-0.3A
70W
2W
-65 to'150°C
150°C
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
10.J,ma.
4.ama.
TO-220
565
5/80

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.7S °C/W
max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tease == 25°C unless otherwise specified)
Parameter
Test conditions
ICEO Collector cutoff for TIP 135 VCE = -30V
current (IB = 0) for TIP 136 VCE = -40V
for TIP 137
VCE = '-50V
,
ICBO Collector cutoff for TIP 135 VCB = -60V
current (IE = 0) for TIP 136 VCB = -SOVe:,
"" for TIP 137 VCB = -100V
lEBO Emitter cutoff VEB = -5V
curr9{lt (Ic = 0)
Min. Typ. Max. Unit
-0.5 mA
-0.5 mA
-0.5 mA
-0.2 mA
-0.2 mA
-0.2 mA
-5 mA
V CEO (sus) 'Collector-em itter Ic = -30mA
sustaining voltage for TIP 135
(IB = 0) for TIP 136
for TIP 137
.
VCE (sat) Collector-em itter Ic = -4A IB = -16mA
saturation voltage Ic = -6A IB = -30mA
Base-emitter Ic = -4A VCE = -4V
VBE (on)
.
voltage
hFE
. DC current gain Ic = -1A VCE = -4V
Ic = -4A VCE = -4V
-60 V
-SO
V
-100 V
-2 V
-3 V
-2.5 V
500 -
1000> 15000 -
• Pulsed: pulse duration = 300JLs, duty cycle ~2 %.
566

EPITAXIAL-BASE NPN/PNP
POWER DARLINGTONS
The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic
Darlington configuration and are mounted in SOT -93 plastic package. They are intended
for use in power linear and switching applications.
The complementary PNP types are TIP145, TIP146, TIP147 respectively.
ABSOLUTE MAXIMUM RATINGS NPN T1P140 TIP141 TIP142
*PNP TIP145 TIP146 TIP147
VC80 Collector-base voltage (I E = 0) 60V SOV 100V
VCEO Collector-emitter voltage (18 = 0) 60V SOV 100V
VE80 Emitter base voltage (lc = 0) 5V
Ic Collector current 10A
ICM Collector peak current (repetitive) 20A
18 Base current 0.5A
P tot Total power dissipation at \case < 25°C 125W
T stg Storage temperature -65 to 150°C
T j Junction temperature 150°C
* For PNP types voltage and current values are negative.
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
(sim. to 1'0-218) 801'-93
567 10/S2

THERMAL DATA
Rth j-ease Thermal resistance junction-case max
°C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max.
Unit
Icso Collector cutoff for TIP140/5 Vcs = 60V
current (IE = 0)
for TlP141/6 Vcs = 80V
for TIP142/7 Vcs = 100V
I CEO Collector cutoff for TlP140/5 Vcs = 30V
current (I s = 0)
IESO Emitter cutoff current V ESO = 5V
(Ic = 0)
for TIP141/6 VCE = 40V
for TIP142/7 VCE = 50V
1
1
1
2
2
2
2
mA
mA
mA
mA
mA
mA
mA
V CEO (susi Collector emitter Ic = 30 mA for TIP140/5
sustaining voltage
for TIP141/6
(I S = 0) for TIP142/7
60
80
100
V
V
V
V CE (sat) * Collector--emitter Ic = 5A Is = 10 mA
saturation voltage Ic = lOA Is = 40 mA
VSE * Base-emitter voltage Ic = lOA VCE = 4V
2
3
3
V
V
V
hFE * DC current gain Ic = 5A VCE = 4V
Ic = lOA VCE = 4V
1000
500
-
-
ton
toff
Turn-on time
Turn-off time
Ic = lOA
lSI = 40 mA
182 = -40 mA R L = 3.11
0.9
4
JJ.S
JJ.S
* Pulsed: pulse duration = 200 jlS, duty cycle = 1.5%.
For PNP devices voltage and current values are negative
568

Safe operating areas
10
c-L-
1ms
5ms-
f-
I
*PULSE OPERATION
-------
G-4740/1
"
IC MAX PULSED 1'. ~ lO,us
f-100,us
r-..I\
ICMAX CONT. I'- 1\..
"- 1'\
. lot OPERATION~
f--f- l~lJllll·· I
2~R SINGLE NON I
REPETITIVE PULSE ,
1---
8
f--
6
l--
~
I'
--
!
~
10-1
2
TI P 140/5 ----
TIP141/6
TlP14217
6 8
10
I
DC current gain (TIP140/1/2)
IC
(A)
16
DC transconductance (TIP140/1/2)
I
f- VCE~4V
,
G 471.2
12
1/
I
10
f--
V -40'C
V
V+--I
1
IIII
10- 1
4
o
r
I
0.8
I
1.6 2.4 3.2 VBE (V)
I
,
569

VCE(sat ) ; ;
(V)
Collector-emitter saturation voltage
(TI P140/1 /2)
G 743 -,
hFE=250
; I
'icE (sal
(V)
Collector-emitter saturation voltage
(TlP140/1/2)
)
3A
I
6A
lOA
G 4744
1 I
I
'1
I
'1 IT
i
I , I V
I
~
~
o
, I I
, I rT
10-1 10 Ie (A)
o
10-'
10
DC current gain (TIP145/617)
E ,
,f--- VCp4V:
I
4
I ,125'c,V
I
Y
G 47t. 7
I~ n 25~"
I V ' ,
I
l/ -40ytt+ , I
,
,
, ,
4
/ V ! I 1
V V i
10
, .
'V I I I i I I
I
i !
16
12
DC transconductance (TIP145/617)
G ~ "74'
0.8 1.6 2.4
570

veE (sat I
(V I
Collector-emitter saturation voltage
(TlP145/6/7)
G - 049
I IIII
I IIII
hFE~250
VCE(s_t
(VI
I
Collector-emitter saturation voltage
(TIP145/6/7)
3A
6 lOA
G 1, 750
-
./
\.
~1
10 10 IC (AI
o
~ 1
10
10 IS (mAl
571

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 3055E is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case.
It is intended for power switching circuits, series and shunt regulators, output stages and
high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (RSE = 100Q)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Base current
Total power dissipation at Tease"':;; 25°C
Storage temperature
Junction temperature
100
70
60
7
15
7
115
-65 to 200
200
v
V
V
V
A
A
W
°C
°C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
10/82 572

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.5 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit I
IcEV Collector cutoff VCE = 100 V
current (VBE= -1.5V) VCE = 100 V Tease = 150°C
ICEO Collector cutoff VCE = 30 V
current (lB = 0)
lEBO Emitter cutoff V EB = 7 V
current (Ic = 0)
V CER (sus)*Coliector-emitter sust. Ic = 200 mA
voltage (RBE = 100[1)
V CEO (sustCollector-emitter sust. Ic = 200 mA
voltage (lB = 0)
VCE (sat)* Collector-emitter Ic =4A IB =400mA
saturation voltage Ic = 10 A IB = 3.3A
VBE * Base-emitter Ic =4A VCE = 4 V
voltage
hFE *
DC current gain
Group 4 Ic = 0.5 A VCE = 4 V
Group 5 Ic = 0.5 A VCE = 4 V
Group 6 Ic = 0.5 A VCE = 4 V
Group 7 Ic = 0.5 A VCE = 4 V
Ic =4A VCE = 4 V
Ic = 10 A VCE = 4 V
hFE1 / hFE2 *Matched pair Ic = 0.5 A VCE = 4 V
fT Transition frequency Ic = 1 A VCE = 4 V
ISlb ** Second breakdown VCE = 40 V
collector current
* Pulsed: pulse duration = 300 I~s, duty cycle = 1.5%
** Pulsed: 1 s, non repetitive pulse
573
1 mA
5 mA
0.7 mA
5 mA
70 V
60 V
1 V
3 V
1.5 V
20 50
35 75
-
-
60 145 -
120 250 -
20 70 -
5 -
1.6 -
2.5 MHz
2.87 A
I

Safe operating areas
DC current gain
Ie
(A)
'0
lie MAX
s
DC
IIII
.PUlS~J.
~~TlON
'OO~~
I"
G -2128
0 ER ATI N
III
I
.. FOR SINGLE NON
REPETITIVE PULSE
"-
~ 1ms t-------- f--
10msL----I--
,o'e..mlll
'0
'0' VeE (V)
_ 2 2 4 6 8 -1 2 4 & B
10 10 1
, 6'
10
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat )
(V) ,
,
10 ,
6
,
,
,
6
,
,
-1
10 ,
6
,
,
-,
10
-1
'0
, 6'
I
hFE= 10
,/
, 6'
10
I
468 22
10
G "64
VBE(sat
(V)
1.5
0.5
)
hFE
./
I
I
I
10
G-48S8
574

Small signal current gain
Collector-base capacitance
50
: I
'I
II
11111111
11111111
VeE = 4V
Ie =0.5A
G t"B6Z
CCBO
(pF)
ISO
G- 4&60
40
30
100
"-
"-
20
I 1\
50
........
10
,
10
10 7 f (Hz)
-,
10
10 V eB (V)
Saturated switching characteristics
Power rating chart
I
(}JS )
.,
10
--
2
~
VCc=30V
181=-1B2
hFE= 10
Is
If
-
Ion
I
6 ,
IC (A)
P'OI
(W)
120
80
40
- -
~
r--..
I"
50 100
i'...
"
6-2722
r-,.
150 Teas. "(OC)
575

EPITAXIAL PLANAR NPN
HIGH VOLTAGE TRANSISTORS
The 2N3439, 2N3440 are high voltage silicon epitaxial planar transistors designed for
use in consumer and industrial line-operated applications. These devices are particularly
suited as drivers in high-voltage low current inverters, switching and series regulators.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (I E= 0)
V CEO Collector-emitter voltage (I B= 0)
VEBO Emitter-base voltage (I e= 0)
Ie Collector current
IB Base current
P tot Total power dissipation at T case :O::25°C
Storage temperature
Junction temperature
Tamb :O::50°C
INTERNAL SCHEMATIC DIAGR:4 ,
2N3439 2N3440
450V 300V
350V 250V
7V
1A
0.5A
10W
1W
-65 to 200°C
200°C
E
MECHANICAL DATA
Dimensions in mm
Collector ~Qnnected to case
TO-39
6/77 576

THERMAL DATA
Rth j-case
~h j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
17.5 °C/W
150 °C/W
ELECTRI CAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff for 2N3439 V cs=360V 20 IlA
current (I E= 0) for 2N3440 V c~250V 20 IlA
IcEO Collector cutoff for 2N3439 V cE=300V 20 IlA
current (I 8 = 0) for 2N3440 V CE=200V 50 IlA
IcEX Collector cutoff for 2N3439 V CE=450V 500 IlA
current (VBE=~1,5V) for 2N3440 V CE=300V 500 IlA
lEBO Emitter cutoff V EB=6V 20 IlA
current (I C = 0)
V CEO (sus) *Collector-emitter I C =50mA
sustaining voltage for 2N3439 350 V
(18=0) for 2N3440 250 V
V CE (sat) * Collector -em itter I C =50mA I B =4mA 0.5 V
saturation voltage
V BE(sat) * Base-emitter I C =50mA I B =4mA 1.3 V
saturation voltage
Cob Output capacitance V cs=1 OV, f=1 MHz 10 pF
hFE * DC current gain Ic =20mA V CE=10V 40 160 -
for 2N3439
Ic =2mA V CE=10V 30 -
h fe Small signal I C =5mA V CE=10V 25 -
current gain
f = 1 KHz
fT Transition frequency I C =10mA V CE=10V 15 MHz
f =5MHz
* Pulsed: pulse duration = 300 IlS, duty cycle ~ 2%
577

Safe operating areas
IC
G-4032
(A)
•
10-1
ICMAXCONT.
= DC OPERATION
PULSE OPERATION II
"
10jJS
100jJs
200jJS
~
.....,. SOO}JS
~~
-lms
10ms
10-2
B
1 :
-FOR SINGLE NON
REPETITIVE PUL SE
2N 3439
10 -3 2N 34L,()-
2 4 6 B 2
• 6 B 2 4 6 B
10
/
10 2 250 350 VCE (V)
DC current gain
Collector-emitter saturation voltage
G 4033
G 4035
'tE -IOV
VCE(sat
(Vl
I"f-EdO
10 2
8
1.5
10
-I-
6 8
10-3
1\
4 68
10-2
:'--12S'C
25'C
-SS'C
II
II
4 68
'\
\~
10-1 IC (Al
0.5
4 6 8
12S'C-
2S'C-
-SS'C-
10- 3
4 6 8
"--
"-
10-2
"-
f'--- ""
'" l'
l, 68 2
10-' IC (Al
578

Base emitter voltage
Transition frequency
0.75
0.5
0.25
-
r-
--
./
- -
\
~
-I- \ ""-
-I-
-55'C
25'C
125'C
G - 4034
f T
(MHzI
30
20
10
/
V
/
/
V
IL
./
./
./
VCE·10V
Tcase=25°C
G 4036
, 5'
10- 3 10-2
, 6 8
10-'
1
VCE ' 10 V
1
, 6 8
IC
(AI
1
6 8 6 8
10 IC (mAl
Power rating chart
G 4037
Ptot
(WI
10
"
r'-.
~
I .......
r....
50 100
........
"
579

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 3713, 2N 3714, 2N 3715 and 2N 3716 are silicon epitaxial-base NPN power
transistors in Jedec TO-3 metal case. They are intended for use in power linear and
switching applications.
The complementary PNP types are the 2N 3789, 2N 3790, 2N 3791 and 2N 3792
respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic Collector current
IB Base current
P tat Total power dissipation at Tease";; 25°C
T stg Storage temperature
T j Junction temperature
2N3713 2N3714
2N3715 2N3716
80V 100V
60V 80V
7V
10A
4A
150W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
CQllector c;onnec;ted to case
TO-3
6/77 580

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.17 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 'C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICEX Collector cutoff VCE = 80 V
current
for 2N3713 and 2N3715
(VBE = -1.5 V)
VCE = 100 V
for 2N3714 and 2N3716
Tease = 150 'C
VCE = 60 V
for 2N3713 and 2N3715
VCE = 80 V
for 2N3714 and 2N3716
lEBO Emitter cutoff VEB = 7V
current (lc = 0)
V CEO (sust Collector-emitter Ic = 200 mA
sustaining voltage for 2N3713 and 2N3715
(lB = 0)
for 2N3714 and 2N3716
VCE (sat)* Collector-emitter Ic = 5A IB = 0.5A
saturation voltage for 2N3713 and 2N3714
for 2N3715 and 2N3716
VBE (sat)* Base-emitter Ic =5A IB = 0.5A
saturation voltage for 2N3713 and 2N3714
for 2N3715 and 2N3716
VBE * Base-emitter voltage Ic =3A VCE = 2 V
hFE * DC current gain Ic = 1 A VCE = 2 V
for 2N3713 and 2N3714
for 2N3715 and 2N3716
Ic =3A VCE = 2 V
for 2N3713 and 2N3714
for 2N3715 and 2N3716
Ic = 10 A VCE = 4V
fT Transition frequency Ic = 0.5 A VCE = 10 V
1 mA
1 mA
10 mA
10 mA
5 mA
60 V
80 V
1 V
0.8 V
2 V
1.5 V
1.5 V
25 90 -
50 150 -
15 -
30 120 -
5 -
4 MHz
* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
581

Safe operating areas
DC current gain
Ie
CA)
10
Ie Mlx
oe OPERATION/'
,
I I Pili
,
.. FOR SINGLE NON
REPETITIVE PULSE
II
~M~~ioL
,'~u}Js
G~ 2506
s-'--
G~2501
hFE'~D.mm~ml
2N3713/15
2N371141lj -
10
10' VeE (V)
4 6' 4 6'
10-2 10-'
4 "
Ie CA)
DC transconductance
Collector-emitter saturation voltage
Ie
CA)
8
VeE=ZV
G504 -2
VCECsat)
CV) 6
hFE = 10
G 2502
6
~
4
10-1
•
/' V
..".
I
o
0.5
4 ,.
1
4 ••
4 "
10 Ie (A)
582

Base-emitter saturation voltage
Transition frequency
VSE(.at )
(V)
I
hFE·l0
G 2503
IT
(MHz)
VeE·l0V
G-2752
1.5
7.5
-
0.5
, .. 2
.....
8 6 8
, 6 2 ,
10- 1 10 Ie (A)
2.5
a
V
......
./
" \.
1\
CCSO
(pF)
Collector-base capacitance
G -2122
t
(1") 8
Saturated switching characteristics
Vee =30V
ISl =-IS2
hFE =10
G - 2505
500
400
r-- ~ 1-
300
200
........
~ tl
- ton r-
laO
t--...
1"!--
, 6 , 2 , , 8
10 veB (V)
6 8
I
Ie (A)
583

EPITAXIAL·BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 3789, 2N 3790, 2N 3791 and 2N 3792 are silicon epitaxial-base PNP power
transistors in Jedec TO-3 metal case. They are intended for use in power linear and
switching applications.
The complementary NPN types are the 2N 3713, 2N 3714, 2N 3715 and 2N 3716
respectively.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Base current
Total power dissipation Tease"::; 25°C
Storage temperature
Junction temperature
2N3789 2N3790
2N3791 2N3792
-60V -80V
-60V -80V
-7V
-10A
-4A
150W
-65 to 200°C
200'C
INTERNAL SCHEMATIC DIAGR~4:
MECHANICAL DATA
Dimensions in mm
.ColJector connected to case
6/77 584

I:
to
THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTICS (Tease =
2S °C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICEX Collector-emitter VCE = -60 V
cutoff current for 2N3789 and 2N3791
(VSE = 1.S V)
VCE = -80 V
for 2N3790 and 2N3792
Tease = 1S0 °C
VCE = -60 V
for 2N3789 and 2N3791
VCE = -80 V
for 2N3790 and 2N3792
IESO Emitter cutoff V ES = -7 V
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = -200 mA
sustaining voltage for 2N3789 and 2N3791
(Is = 0)
for 2N3790 and 2N3792
VCE (sat)* Collector-emitter Ic = -4 A Is = -O.4A
saturation voltage for 2N3789 and 2N3790
Ic = -S A Is = -O.SA
for 2N3791 and 2N3792
VSE (sat)* Base-emitter Ic = -4 A Is = -O.4A
saturation voltage for 2N3789 and 2N3790
Ic = -S A Is = -O.SA
for 2N3791 and 2N3792
hFE* DC current gain Ic = -1 A VCE = -2 V
for 2N3789 and 2N3790
for 2N3791 and 2N3792
Ic = -3 A VCE = -2 V
for 2N3789 and 2N3790
for 2N3791 and 2N3792
Ic = -10A VCE = -4 V
fr Transition frequency Ic = -O.SA VCE = -10 V
-1 mA
-1 mA
-S mA
-S mA
-S mA
-60 V
-80 V
-1.S
-1 V
-1 V
-2 V
2S 90 -
SO 1S0 -
1S -
30 120 -
S -
V
4 MHz
* Pulsed: pulse duration = 300 fJ-s, duty cycle = 1.5%
585

Safe operating areas
DC current gain
-IC
(A)
10
Ie Mix
II
~~~~~~io~
G 2500
O-ALS - -
G - 21,9 411
-
./
~rTn-lrr 1\
.. FOR SINGLE NON
REPETITIVE PULSE
' "u}Js
10' -
8
10
t-
Vec-2V
2N3789/91
2N37i0l9i-
10
10' -VCE (V)
, "'
-Ie (A)
DC transconductance
Collector-emitter saturation voltage
-Ie
(A)
V E=-2V
I
-24
)
-
G 2496
I
.
4
r---
,
, I
:
V
./
hFE =10
V
v
,
I
o
0.5
8 , "8 , "8
1 10 -Ie (A)
586

Base-emitter saturation voltage
Transition frequency
-VBE(sat
(V)
I
G 2497
'T
(MHz)
veE=-IOV
G 2753
1.5
hFPIO
1/
,.."
7.5
.......
/'
,
0.5
2.5
,/
o
• , , . , , , .
10
,
, , .
-Ie (A)
o
-fe(A)
Collector-base capacitance
Saturated switching characteristics
eeBO
(pF)
G 2116
(/JS)
•
Vec=-30V
IBI =-I B2
h~~ = 10
G 2499
500
400
- -
IA
.......
"-
..........
300
If
200
ton
100
o
, , , . , , .
10
,
, , .
-VCB (V)
10-'
• • , , .
-IC CA)
587

EPITAXIAL PLANAR PNP
MEDIUM POWER GENERAL PURPOSE TRANSISTORS
The 2N4234, 2N4235 and 2N4236 are silicon epitaxial planar PNP transistors
in Jedec TO-39 metal case.
They are intended for use in switching and amplifier q.pplications.
The complementary NPN types are the 2N4237, 2N4238 and 2N4239 respectively.
ABSOLUTE MAXIMUM RATINGS
2N4234 2N4235 2N4236
Veso
VeEO
V ESO
Ie
Is
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
-40V -60V -80V
-40V -60V -80V
-7V
-3A
-0.2A
6W
1W
-65 to 200°C
200°
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
5/80 588

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 29 °C/W
max 175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBo Collector cutoff for 2N4234 VCE = -40V -0.1 mA
cu rrent (IE = 0) for 2N4235 VCE = -60V -0.1 mA
for 2N4236 VCE = -80V -0.1 mA
ICEV Collector cutoff for 2N4234 VCE = -40V -0.1 mA
current (VBE = 1.5) for 2N4235 VCE = -60V -0.1 mA
for 2N4236 VCE = -80V -0.1 mA
Tease = 150°C
for 2N4234 VCE = -30V -1 mA
for 2N4235 VCE = -40V -1 mA
for 2N4236 VCE = -60V -1 mA
ICEO Collector cutoff for 2N4234 VCE = -30V -1 mA
current (IB = 0) for 2N4235 VCE = -40V -1 mA
for 2N4236 VCE = -60V -1 mA
lEBO Emitter cutoff VBE = 7V -0.5 mA
current (Ic = 0)
V CEO (sus) 'Collector-emitter Ic = -100mA
sustaining voltage for 2N4234 -40 V
(IB = 0) for 2N4235 -60 V
for 2N4236 -80 V
589

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. ,Typ. Max. Unit
. VCE (sat) Collector-emitter Ic = -1A Is = -100mA -0.6 V
saturation voltage
Base-emitter Ic = -1A Is = -100mA -1.5 V
VSE (sat)
.
saturation voltage
VSE
. Base-emitter Ic = -0.25A VCE = -1V -1.0 V
voltage
hFE
. DC current gain Ic = -100mA VCE = -1V 40 -
Ic = -250mA VCE = -1V 30 150 -
Ic = -500mA VCE = -1V 20 -
Ic = -1A VCE = -1V 10 -
fr Transition Ic = - 1 OOmA V CE = -10V 3 MHz
frequency
f = 1 MHz
Ccso Collector-base IE = 0 Vcs = -10V 100 pF
capacitance f = 100KHz
hie Small signal Ic = -50mA VCE = -10V 25 -
current gain f = 1KHz
• Pulsed: pulse duration = 300I-l-S, duty cycle ~2%
590

EPITAXIAL PLANAR NPN
HIGH CURRENT, FAST SWITCHING APPLICATIONS
The 2N 4895, 2N 4896 and 2N 4897 are silicon expitaxial planar NPN transistors in Jedee
TO-39 metal case.
They are intended for high current, fast switching applications and for power amplifiers.
ABSOLUTE MAXIMUM RATINGS
Vcso Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (Ic = 0)
Ic Collector current
P tot Total power dissipation at T amb,,;;25°C
Tease";;25°C
Storage temperature'
Junction temperature
Tease";; 1 OO°C
2N4895 2N4896 2N4897
120V 120V 150V
60V 60V 80V
6V
5A
1W
7W
4W
-65 to 200°C
200 °C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-39
591
6/77

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
25 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
ICES Collector cutoff for 2N4895 and 2N4896
current (VSE = 0) VCE = 120V
VCE = 60V
VCE = 60V Tease = 150°C
for 2N4897
VCE = 150V
VCE = 100V
VCE = 100V Tease = 150°C
IESO Emitter cutoff VES = 6 V
current (Ic = 0)
V CEO (sust Collector-emitter Ic = 50 mA
sustaining voltage for 2N4895 and 2N4896
ps-= 0)
for 2N4897
VCE (satt Collector-emitter Ic = 5A Is = 0.5A
saturation voltage
VSE (sat)* Base-emitter Ic = 5A Is = 0.5 A
saturation voltage
hFE* DC current gain Ic =2A VCE = 2 V
for 2N4895 and 2N4897
for 2N4896 .
Ic =2A VCE = 2 V
Tease = -55°C
for 2N4895 and 2N4897
for 2N4896
fr Transition frequency Ic = 0.5A VCE = 5V
for 2N4895 and 2N4897
for 2N4896
Ccso Collector-base IE = 0 Vcs= 10 V
capacitance f = 1 MHz
ton Turn-on time Ic =5A Vcc= 20V
lSI = 0.5 A
ts Storage time Ic = 5A Vcc= 20V
t f Fall time lSI = -ls2= 0.5A
* Pulsed: pulse duration = 300 J.1s, duty cycle = 1.5%
592
Min. Typ. Max. Unit
1 mA
1 J.1A
100 J.1A
1 mA
1 J.1A
100 J.1A
1 mA
60 V
80 V
1 V
1.6 V
40 120 -
100 300 -
15 -
35 -
50 MHz
80 MHz
80 pF
0.35 J.1s
0.35 J.1s
0.3 J.1s

Safe operating areas
DC current gain
IC
lA)
13-2564
• • PULSE OPERATION
6 IC MAX
•
.......
6 i---oc OPERATION
,
•
6
,
,
,
""" lms
"""
1'-
r\
I
• FOR SINGLE NON
1\
REPETITIVE PULSE
6 •
10 VCE lV)
200
100
,-
VCE=ZV
-- .... \
,
V
ZN489516
2N4897.,-
2N4896
j.:..-'-
1.-
~~
I'\.
"
I\.
G.2563
IC
lA)
DC transconductance
Collector-emitter saturation voltage
IC
lA)
hFplO
I'
0-2 562
0,6
t
I
hFE=10
13_2561
I
I
II
0.4
o
v
1/
I
II
05 VBElsat) lV)
o.Z
V
r7
IC
lAI
593

fT
(MHz)
Transition frequency
-
.... ,.,
eeBO
(pF)
60
Collector-base capacitance
........
100
V
1/
/
7
17
1/
40
20
"""
Ie (A)
o
20 40 60 'Ice (V)
Saturated switching characteristics
Power rating chart
t
(ns)
10'
•
,
,
r-.,..Is
.......
1'-
~ If Vy
Ion
6..2566
P tot
(W)
G-2561
10
10'"
Vee·20V
hFE·l0
IB1.-I Bj
, . , .
Ie (A)
o
I'.
r,
I"
I"
1'\
1'\
1'\
1'\
" 1'\ 1'\
1'\
"
50 100 150 Tease " COe)
594

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT POWER SWITCH
The 2N 5038, 2N 5039 and 2N 6496 are silicon planar multiepitaxial NPN transistors in
Jedec TO-3 metal case.
They are especially intended for high current and fast switching applications.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEX Collector-emitter voltage (VBE = -1.5V, RBE = 100Q)
V CER Collector-emitter voltage (RBE:S 50 Q)
T j Junction temperature
VCEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic
ICM
Collector current
Collector peak current
IB Base current
P tot Total power dissipation at t case";; 25°C
T stg Storage temperature
2N5038 2N5039 2N6496
150V
150V
110V
90V
7V
20A
30A
120V
120V
95V
75V
7V
20A
30A
5A
140W
-65 to 200°C
200°C
150V
150V
130V
110V
7V
15A
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
CollectQr connected to case
TO-3
595
10/82

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.25 °C/W
.
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEV Collector cutoff for 2N5038
current (VBE = -1.5 V) VCE = 140 V 50 mA
VCE = 100V Tease = 150°C 10 mA
for 2N5039
VCE = 110V 50 mA
VCE = 85V Tease = 150°C 10 mA
for 2N6496
VCE = 130V 20 mA
VCE = 130V Tease = 150°C 25 mA
ICEO Collector cutoff for 2N5038
current (IB = 0) VCE = 70 V 20 mA
for 2NS039
VCE = 55 V 20 mA
lEBO Emitter cutoff VEB = 7V 50 mA
current (lc = 0) VEB = 5V
for 2N5038 5 mA
for 2NS039 15 mA
V CEX (sust Collector-emitter Ic = 200 mA
sustaining voltage for 2NS038 150 V
(VBE= -1.5V, for 2N5039 120 V
RBE = 100Q) for 2N6496 150 V
VCER (sust Collector-emitter Ic = 200mA
sustaining voltage for 2N5038 110 V
(RBE = 50 Q) for 2N5039 95 V
for 2N6496 130 V
V CEO (sust Collector-emitter Ic = 200mA
sustaining voltage for 2N5038 90 V
(IB = 0) for 2N5039 75 V
for 2N6496 110 V
596

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
VCE (sat) * Collector-emitter for 2N5038
saturation voltage Ic = 12 A 18 = 1.2 A 1 V
Ic = 20 A 18 = SA 2.S V
for 2N5039
Ie = 10 A 18 = 1 A 1 V
Ic = 20 A 18 = SA 2.S V
for 2N6496
Ie = B A 18 = O.B A 1 V
V 8E (sat) * Base-emitter for 2N5038 and 2N5039
saturation voltage Ie = 20 A 18 =SA 3.3 V
for 2N6496
Ie = BA 18 = O.B A 2 V
V8E* Base-emitter voltage for 2N5038
Ie = 12 A VeE = SV 1.B V
for 2N5039
Ie = 10 A VeE = SV 1.B V
for 2N6496
Ie =BA VeE = 2V 1.6 V
hFE * DC current gain for 2N5038
Ie
for 2N5039
Ie = 2 A VeE = SV 30 2S0 -
Ie = 10 A VeE = SV 20 100 -
for 2N6496
Ie = BA VeE = 2V 12 100 -
Ie =2A
= 12 A
VeE = SV
VeE = SV
SO
20
2S0
100
-
-
hfe Small signal Ie = 2A VeE = 10 V
current gain f = S MHz 12 -
Ce80 Collector-base IE = 0 Ve8 = 10 V
capacitance f = 1 MHz 300 pF
t, Rise time for 2N5038 O.S fLs
Ie = 12 A Vee= 30 V
181 = -182 = 1.2 A
for 2N5039
ts Storage time Ie = 10 A Vee= 30 V 1.S fLS
181 = -182 = 1 A
for 2N6496
Ie = BA Vec= 30 V
tf Fall time 181 = -182 = O.B A O.S fLs
S97

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
ISib ** Second breakdown V CE = 28 V
collector current V CE = 45 V
ESib Second breakdown V BE = -4 V
energy L = 180 ",H
Pulsed: pulse duration = 300 "'s, duty cycle
** Pulsed: 1 s non repetitive pulse
R BE = 20n
5
0.9
for 2N5038 13
for 2N5039 13
for 2N6496 5.7
1.5%
A
A
mJ
mJ
mJ
---
Safe operati ng areas
(for 2N5038 and 2N5039)
Safe operating areas
(for 2N6496)
598

DC current gain
Collector-emitter saturation voltage
f---+
e----+-
1---
F'IIII
IT--VCE"5V
G 4889
1----v CE"2V I--~ '--
150 c-·- 1- -, e--- --
n
VCE(sat I
I
- --f-- -
~ •.
_1 I
~E"1O
-
t--
I
!~
100
50
10-1
-----t.
1
, r-...
I
,
~~~
- -
10- 1
.'\
\,
--+-
'.
f--t--
f--
r=-
~
10 10-1
..
~ ~oc
t--~--- 55°C
1025 0 C
2 i
./
r;fI
,
Collector-emitter saturation voltage
Base-emitter saturation voltage
G [,891 G 2639
I ) II I I
I
I
I i I: I III ! I
f'..
1 f' 15A
20A
I
I
I
'I ! IhFE =10 I,
II
I'
I
.....
I
I
/
I
I
l'::
5A
2A
lOA
I
I iii
I i III
Ia(AI 10 Ie (AI
599

~--,--
3.5
2.5
1.5
0.5
o
V BE{on) VS. collector current
) f- ;-+ H- + + K
_ + T I
V CE
~
~5V
--
t , -,
-
- 1-+ it t-- t ~J
- \ I
I
- - .... --- --
-i,/
----.-
----.-
- ----
h
i
+~-
.- .- ,to . ~
+4.
-
--
-
125'C
--T
I IIII
"
---- l-
ff.
'I
I 1 .251:
10
G 4892
Saturated switching characteristics
CCBO
CpF)
10'
10
Collector-base capacitance
.......
I
............
...... -
10
I
:
I
I
+- i
I
I
r
-
I
-+:
I I I
10' VCBCV)
fI
(MHz)
60
50
40
30
20
Transition frequency
/
/'
./
-
\h~15V "
'\
G -4695
~o 1---1 +--+-1 1 +++-11111-+++--11 I --+-1 +-+-+1 II-+t-++lllill
600

EPITAXIAL PLANAR PNP
HIGH SPEED MEDIUM VOLTAGE SWITCHES
The 2N5151 and 2N5153 are silicon epitaxial planar PNP transistors in Jedec
TO-39 metal case intended for use in switching applications.
The complementary NPN types are the 2N5152 and 2N5154 respectively.
ABSOLUTE MAXIMUM RATINGS
2N5151
2N5153
VCSO
VCEO
VEBO
Ic
ICM
Is
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~ 50°C
Tease ~ 100°C
Tamb ~ 25°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC DIAGR:4
-100V
-80V
-5.5V
-5A
-10A
-2.5A
10W
6.7W
1W
-65 to 200°C
200°C
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-39
601
5/80

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 15 °C/W
max 175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff VCE = -60V -1 f.LA
current (VBE = 0) VCE = -100V -1 rnA
ICEV Collector cutoff VCE = -60V -500 f.LA
current (VBE = 2V) Tease =150°C
ICEO Collector cutoff VCE = -40V -50 f.LA
current (IB = 0)
lEBO Emitter cutoff VEB = -4V -1 f.LA
current (Ic = 0) VEB = -5.5V -1 rnA
VCEO (Sus)*Coliector-emitter Ic = -100mA -80 V
sustaining voltage
(IB = 0)
VCE (sat)* Collector-emitter Ic = -2.5A IB = -250mA -0.75 V
saturation voltage Ic = - 5A IB = -'500mA -1.5 V
VBE (sat)* Base-emitter Ic = -2.5A IB = -250m A -1.45 V
saturation voltage Ic = -5A IB = -500mA -2.2 V
VBE * Base-emitter Ic = -2.5A VCE = -5V -1.45 V
voltage
hFE * DC current gain for 2N5151
Ic = -50 rnA VCE = -5V 20 -
Ic = -2.5A VCE = -5V 30 90 -
Ic = -5A VCE = -5V 20 -
Tease = -55°C
Ic = -2.5A VCE = -5V 15 -
for 2N5153
Ic = -50mA VCE = -5V 50 -
Ic = -2.5A VCE = -5V 70 200 Ic = -5A VCE = -5V 40 -
Tease = -55°C
Ic = -2.5A VCE = -5V 35 -
602

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
CCBO Collector-base IE = a VeB = -10V 250 pF
capacitance f = 1 MHz
hIe Small signal Ie = -0.1A VeE = -SV
current gain f = 1 KHz
for 2N5151 20 -
for 2N5153 50 -
Ie = -O.SA VeE = -SV
f = 20MHz
for 2N5151 3 -
for 2N5153 3.5 -
ton Turn on time Ie = -SA IB1 = -O.SA 0.5 f.Ls
Vce = 30V
toft Turn off time Ie = -SA IB1 = -IB2 = O.SA 1.3 f.Ls
Vee = 30V
* Pulsed: pulse duration = 300f.Ls, duty cycle :0:;2%.
603

EPITAXIAL PLANAR NPN
HIGH SPEED MEDIUM VOLTAGE SWITCHES
The 2N5152 and 2N5154 are silicon epitaxial planar NPN transistors in Jedec
TO-39 metal case intended for use in switching applications.
The complementary PNP types are the 2N5151 and 2N5153 respectively.
ABSOLUTE MAXIMUM RATINGS
2N5152
2N5154
VC60
VCEO
VE60
Ic
ICM
16
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (16 = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease:;S 50°C
Tease :;S 1 00 °C
Tamb :;S 25°C
Storage temperature
Junction temperature
100V
80V
6V
2A
10A
1A
lOW
6.7W
1W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR:~~r
E
MECHANICAL DATA
Dimensions in mm
Collector conl1ected to cas.e
5.08 6.6 ma, 12.7""0 ~
f . ~ltrl f. i~. I~
. BT.£T~l~L . '~
c . :;, ,PODS-B
TO-39
5/80 604

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 15 °C/W
max 175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff VCE = 60V 1 {-LA
current (VSE = 0) VCE =100V 1 mA
ICEV Collector cutoff VCE =60V 500 {-LA
current (VSE = -2V) Tease = 150°C
ICEO Collector cutoff VCE = 40V 50 {-LA
-
current (Is = 0)
lEBO Emitter cutoff VEB = 5V 1 {-LA
cu rrent (Ic = 0) VEB = 6V 1 mA
VCEO (Sus)*Coliector-emitter Ic = 100mA 80 V
sustaining voltage
(Is = 0)
VCE (sat)* Collector-emitter Ic = 2.5A Is = 250mA 0.75 V
saturation voltage Ic = 5A Is = 500mA 1.5 V
VBE (sat)* Base-emitter Ic = 2.5A Is = 250mA 1.45 V
saturation voltage Ic = 5A Is = 500mA 2.2 V
VBE * Base-emitter Ic = 2.5A VCE = 5V 1.45 V
voltage
hFE * DC current gain for 2N5152
Ic = 50mA VCE = 5V 20 -
Ic = 2.5A VCE = 5V 30 90 -
Ic = 5A VCE = 5V 20 -
Tease = -55°C
Ic = 2.5A VCE = 5V 15 -
for 2N5154
Ic = 50mA VCE = 5V 50 -
Ic = 2.5A VCE = 5V 70 200 -
Ic = 5A VCE = 5V 40 -
Tease = -55°C
Ic = 2.5A VCE = 5V 35 -
605

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
Ce60 Collector-base IE = 0 Ve6 = 10V 2S0 pF
capacitance f = 1MHz
hIe Small signal Ie = 0.1A VeE = SV
current gain f = 1 KHz
for 2N5152 20 -
for 2N5154 SO -
Ie = O.SA VeE = SV
f = 20MHz
for 2N5152 3 -
for 2N5154 3.S -
ton Turn on time Ie = SA 161 = O.SA O.S p.,s
Vee = 30V
toll Turn off time Ie = SA 161 = -162 = O.SA 1.3 p.,s
Vee = 30V
* Pulsed: pulse duration = 300p.,s, duty cycle ~2%.
606

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 5190, 2N 5191 ,2N 5192 are silicon epitaxial-base NPN power transistors in Jedec
TO-126 plastic package, intended for use in medium power linear and switching
applications.
The complementary PNP types are the 2N 5193, 2N 5194 and 2N 5195 respectively.
ABSOLUTE MAXIMUM RATINGS
2N5190 2N5191
2N5192
Vcso Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current (t ~ 10 ms)
Is Base current
P tot Total power dissipation at Tease ~ 25°C
T stg Storage temperature
T j Junction temperature
INTERNAL SCHEMATIC DIAGR:4 :
40V 60V BOV
40V 60V BOV
5V
4A
7A
1A
40W
-65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
7.8"'''
L
(1.) Wijhirt this region the cross-section of thE' leads is uncontrolled
TO-126 (SOT -32)
607
6/77

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.12 °C/W
100 °C/W
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO Collector cutoff for 2N5190
current (IE = 0) for 2N5191
for 2N5192
VCB = 40V
VCB = 60V
V CB = 80V
100 /-LA
100 /-LA
100 /-LA
IcEX Collector cutoff for 2N5190
current (V EB = 1.5V) for 2N5191
for 2N5192
T case = 125°C
for 2N5190
for 2N5191
for 2N5192
V CE = 40V
V CE = 60V
V CE = 80V
V CE = 40V
V CE = 60V
V CE = 80V
100 /-LA
100 /-LA
100 /-LA
2 mA
2 mA
2 mA
ICEO Collector cutoff for 2N5190
cu rrent (I B = 0) for 2N5191
for 2N5192
lEBO Emitter cutoff V EB = 5V
current (lc = 0)
V CE = 40V
VCE = 60V
VCE = 80V
1 mA
1 mA
1 mA
1 mA
V CEO (sus)* Collector-emitter
sustaining voltage
(IB = 0)
Ic = 100mA
for 2N5190
for 2N5191
for 2N5192
40 V
60 V
80 V
VCE (sat) * Collector-emitter Ic = 1.5A
saturation voltage Ic = 4A
VBE* Base-emitter voltage Ic = 1.5A
hFE * DC current gain Ic = 1.5A
Ic = 4A
fT Transition frequency Ic = 1A
* Pulsed: pulse duration 300 /-Ls, duty cycle
608
IB = 0.15A
IB = 1A
VCE = 2V
V CE = 2V
for 2N5190
for 2N5191
for 2N5192
V CE = 2V
for 2N5190
for 2N5191
for 2N5192
VCE = 10V
1.5%
0.6 V
1.4 V
1.2 V
25 100 -
25 100 -
20 80 -
10 -
10 -
7 -
2 MHz

Safe operating areas
DC current gain
IC
(A)
t Ie MAX (PULSED)
·PULS
OPERATION
G 2738
!,s-I--
Ie MAX O::ONTINUOUS) ,,,-"
L~!,S- -
I III I'\'\. '\. IY
DC OPERATION
II11 >.: \ \ ,
I 11111
l~
"
OO!,s
i----FOR SINGLE NON -
1\
t
c-- REPETITIVE PULSE r-
l~ms
\:\
~
~N5190
2N5191
2N519f
10
i
pms i
10'
10
--
-....
,
10-2 1
I
VCp2V
!
I'..
6_2516
Ii
! !
4 6 ,
'c (A)
VCE(sat),
Collector-emitter saturation voltage
G -2442
)
Base-emitter saturation voltage
G-2731
(V) 6
10-1
./
",
hFE=10
/
/:
/
I
I
1.5
0.5
-
-""'"
hFpl0
./
..,.;.;;-
I
6 , , ,
IC(A)
IC
(A)
609

Transition frequency
Collector-base capacitance
IT
(MHz )
-
-..
VCE=IV
G 2423
ceBO,
(pF) 6
G 2424
r'\.
'\.
\.
10
10'
t-
......... '"
\
"
a
10
, 6 , , 6' , 6 ,
Ie (A)
10-1 10 VeB (V)
Saturated switching characteristics
Power rating chart
,Vce=30V
G 2422
Ptot
(W)
11-2516
IIB1=-IB2
f': I-r--.
r-....
hFE=10
Is
~
r-....
.......
~ ./
ton
40
30
20
10
'\
\..
~
I,
I'\.
'\.
-
'\
,
10-1
6 ,
Ie (A)
50 100
610

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 5193, 2N 5194, 2N 5195 are silicon epitaxial-base PNP power transistors in Jedec
TO-126 plastic package, intended for use in medium power linear and switching
applications.
The complementary NPN types are the 2N 5190, 2N 5191, 2N 5192 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO
V EBO
Ic
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (t ,s;; 10 ms)
Base current
Total power dissipation at Tease ,s;; 25°C
Collector-base voltage (IE = 0)
ICM
IB
P tot
T stg Storage temperature
T j
Junction temperature
2N5193 2N5194 2N5195
-40V -60V -BOV
-40V -60V -BOV
-5V
-4A
-7A
-1 A
40W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR~~'
MECHANICAL DATA
E
Dimensions in mm
N
M .,.
D
M
(I) Within this region the cross~sectlon of thE' leads IS uncontrolled
1.2
Q58
i
12 1-
4.4
TO-126 (SOT -32)
611
6/77

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.12 °C/W
100 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
Icso Collector cutoff for 2N5193 Vcs= -40V
current (IE = 0) for 2N5194 Vcs= -60V
for 2N5195 Vcs = -80V
ICEX Collector cutoff for 2N5193 VCE = -40V
current (VES = 1.5) for 2N5194 VCE = -60V
for 2N5195 VCE = -80V
Tease= 125°C
for 2N5193 VCE = -40V
for 2N5194 VCE = -60V
for 2N5195 VCE = -80V
ICEO Collector cutoff for 2N5193 VCE = -40V
current (Is = 0) for 2N5194 VCE = -60V
for 2N5195 VCE = -80V
IESO Emitter cutoff V EB = -5V
current (lc = 0)
-100 [LA
-100 [LA
-100 [LA
-100 [LA
-100 [LA
-100 [LA
-2 mA
-2 mA
-2 mA
-1 mA
-1 mA
-1 mA
-1 mA
V CEO (sus)* Collector-emitter
sustaining voltage
(Is = 0)
Ic = -100mA
for 2N5193
for 2N5194
for 2N5195
-40 V
-60 V
-80 V
VCE (sat)* Collector-emitter Ic = -1.5A Is = -0.15A
saturation voltage Ic = -4A Is = -1A
VSE * Base-emitter voltage Ic = -1.5A VCE = -2V
hFE * DC current gain Ic = -1.5A VCE = -2V
for 2N5193
for 2N5194
for 2N5195
ic = -4A VCE = -2V
for 2N5193
for 2N5194
for 2N5195
fT Transition frequency Ic = -1A VCE = -10V
-0.6 V
-1.2 V
-1.2 V
25 100 -
25 100 -
20 80 -
10 -
10 -
7 -
2 MHz
* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
612

Safe operating areas
DC current gain
-Ie
(A)
~ Ie MAX (PULSED)
* PULSE OPERATION
'\.
Ir MAX (CONTINUOUS) . '\.
I I II i'\i'\ i'\
II II );: \ \
DC OPERATION
I 1111111 :~
-2739
1)Js--
!16)Js--
OO)Js
10'
I
I-
-......
VCE;-2V
I
G-2517
-*FOR SINGLE NON
- REPETITIVE PULSE
2N5193
2N5194
2N5195
10
!
1ms
Oms
10
B
1"-
Ii
1 '
, , , B 8
10-1 1 -Ie (A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
-VCE(sat) B
(V)
B
,
10-1
,
/'
,./
hFE;10
/
./
/
G -2438
1.5
0.5
t
r--
1--1-
hFE _10
~
./
I-/"
G 2751
o
10-1
-Ie (A)
613

Transition frequency
Collector-base capacitance
'T
(MHz l
IV~.=-lV
-
CCBO
(pFl,
15
10
'\.
"
"
I'\.
10'
f'""
o
10-'
10
.. , . " •••
10 -vcs(Vl
Saturated switching characteristics
Power rating chart
I
8
~sl
6
G-2 419
Plot
(Wl
. -
I
6-2516
VCC=-JOV
IS1=-IS2
h FE=10
40
2
I\..
t\.
1\
I\.
t\.
" 1,\
1-....
"
Is
......
'1'0.. , ........
I"
...... 1'-- t---!!.
30
20
10
Ion
50 100 150 Tcas~(·Cl
614

EPITAXIAL PLANAR NPN
HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N 5336, 2N 5337, 2N 5338 and 2N 5339 are silicon epitaxial planar NPN transistors
in Jedec TO-39 metal case.
They are intended for high current switching applications up to 5A.
ABSOLUTE MAXIMUM RATINGS
2N5336 2N5338
2N5337 2N5339
V CBO
V CEO
V EBO
Ic
ICM
IB
P tot
Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tamb~25°C
Tcase~25'C
Storage temperature
Junction temperature
80V 100V
80V 100V
6V
5A
7A
1A
1W
6W
-65 to 200'C
200 'c
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-39
615
6/77

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
29.2 °C/W
175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
leso Collector cutoff for 2N5336 and 2N5337
current (IE = 0) Vcs = 80 V 10 f1A
for 2N5338 and 2N5339
Vcs= 100 V 10 f1A
ICEO Collector cutoff for 2N5336 and 2N5337
current (Is = 0) VCE = 75V 100 f1A
for 2N5338 and 2N5339
VCE = 90 V 100 f1A
ICEX Collector cutoff for 2N5336 and 2N5337
current (VSE = -1.5 V) VCE = 75 V 10 f1A
VCE = 75 V Tease = 150°C 1 mA
for 2N5338 and 2N5339
VCE = 90 V 10 f1A
VCE = 90 V Te~se = 150°C 1 mA
V CEO (sus)* Collector-emitter Ic = 50 mA
sustaining voltage for 2N5336 and 2N5337 80 V
(Is = 0) for 2N5338 and 2N5339 100 V
VCE (sat) * Collector-emitter Ic =2A Is =0.2 A 0.7 V
saturation voltage Ic = 5A Is = 0.5 A 1.2 V
VSE (sat)* Base-emitter Ic =2A Is = 0.2 A 1.2 V
saturation voltage Ic = 5A Is = 0.5 A 1.8 V
hFE * DC current gain Ic = 0.5 A VCE = 2 V
for 2N5336 and 2N5338 30 -
for 2N5337 and 2N5339 60 -
Ic = 2A VCE = 2 V
for 2N5336 and 2N5338 30 120 -
for 2N5337 and 2N5339 60 240 -
Ic = 5A VCE = 2 V
for 2N5336 and 2N5338 20 -
for 2N5337 and 2N5339 40 -
616

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
fT Transition frequency Ie = 0.5A VeE = 10 V 30 MHz
Ceso Collector-base Ves= 10V IE = 0
capacitance f = 0.1 MHz 250 pF
ton Turn-on time Ie =2A Vee= 40V 200 ns
IS1 = 0.2 A
ts Storage time
Ie =2A Vee= 40V
4 Fall time IS1 = -ls2 = 0.2 A
2 fJS
200 ns
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
Safe operating areas Ie 8
(Al 6 riC MAli
" .....
I",
""',
~
'" '" ......
""-
G~G92
DC OPERATION
DISSIPATION LIMITED
1'\,
4 6 8
10
2N5336
2N15~3r
I
2N5338
2Nr3j
617

DC current gain
Collector-emitter saturation voltage
VCE=2V
~691
VCE(sa1
(V)
hFE =10
G -2689
120
0.6
80
~
i-"'"
"
./ '\.
~
0.4
IL
40
o
IC (AI
0.2
o
-
/
V
IC(A)
Base-emitter saturation voltage
Collector-base capacitance
IC
(A)
4
h .10
6-2690
CCBO
(pF)
75
, 1=IM
..... 3
50
i'"-
25
o
o.s
1.5 VaE(saI) (V)
o
25 50 76 VCB(V)
618

Saturated switching characteristics
Power rating chart
I 8
(~S),
~ ....
hFE=10
Vee=40V
Ip =1OI'S
G-2G9S
Ptot
(W)
G -2694
~ .......
" "
t--..
I'-..
i'-
.......
t-...
"""F::
If
4
Ion
, . . ,
Ie (A)
o
50 100
/".
"
r-....
1'.
150 Teas. (Oe)
Switching time test circuit
+37V-n
OV
~10/JS
INPUT PULSE
tr,tf~lOns
DUTY CYCLE= I·'.
-3.3V
5-22·70
619

EPITAXIAL PLANAR PNP
HIGH VOLTAGE TRANSISTORS
The 2N5415, 2N5416 are high voltage silicon epitaxial planar transistors designed for
use in consumer and industrial line-operated applications. These devices are particularly
suited as drivers in high-voltage low current inverters, switching and series regulators.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (I E= 0)
V CEO Collector-emitter voltage (I B= 0)
V EBO Emitter-base voltage (I c= 0)
Ic Collector current
IB Base current
P tot Total power dissipation at T case S25°C
Storage temperature
Junction temperature
T amb S50°C
2N5415 2N5416
-200V -350V
-200V -300V
-4V -6V
-1A
-0.5A
10W
1W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
CplleCt6r connected to case
1"0-39
5/80 620

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
17.S °C /W
1S0 °C /W
ELECTRICAL CHARACTERISTlCS(T case=2SoCunless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICBO Collector cutoff for 2N5415 V cs=-17SV -SO JlA
current ( I E = 0) for 2N5416 V cs=-280V -SO JlA
ICEO Collector cutoff V CE=-1S0V -SO JlA
current ( I B = 0)
lEBO Emitter cutoff for 2N5415 VEB=-4V -20 JlA
current ( I C = 0) for 2N5416 V Es=-6V -20 JlA
V CEO (sus) ·Collector-emitter Ic =-10mA
sustaining voltage for 2N5415 -200 V
(I B=O) for 2N5416 -300 V
VCER • Collector-emitter Ic =-SOmA
sustaining voltage for2N5416 -350 V
(RBE=sOn)
VCE (sat)• Collector-emitter Ic =-SOmA I B =-SmA -2.S V
saturation voltage
V BE • Base-emitter Ic =-SOmA V CE=-10V -1.5 V
voltage
621

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
hFE * DC current gain Ic =-50mA V CE=-10V
for 2N5415 30 150 -
for 2N5416 30 120 -
hIe Small signal Ic =-5mA V CE=-10V 25 -
current gain
f = 1 KHz
fT Transition frequency Ie =-10mA V eE=-10V 15 MHz
f =5MHz
CeBo Collector-base IE =0 V es=-10V 25 pF
capacitance
f = 1 MHz
* Pulsed: pulse duration = 300 !!S, duty cycle::; 2%
,
-IC 8
6
(rnA) 4 _.
Safe operating areas
2 PULSE OPERATION- [-.
6 IC MAX CONT
4
2
10 2
10
:f==
"
~
G 4026
lOps
SOps
100ps
SOOps
Sms
I / ~ ~.
DC OPERATION--"
2 ~~~M~Nu~~~
8
6
4
2
\
\ \
2N541S'~
2N5416- f--
100
DC current gain
Vep-l0V
50
I
12S'C
2S'C
/ -SS'C
/
/ "'\
II j
I
I
-
T"t
G 4027
\
2 4 68 1 4 6 8 2 00"
10 10 2
6 8
4 6 8 4 6 8 4 6 8
10'3 10.2 10 -I - IC (A)
622

Collector-emitter saturation voltage
Base-emitter voltage
-VCE(sat
(V)
05
) I I
hFE ~ 10
f-----
f-- ---
1/
1 I
1/11
77
125·C~
~
25·C
-55·C--
I
[~
G 4028
0.75
0.5
0.25
I
--- c;:::::::
- l- R
--
c:,..;:;1-
i
-55·C
I-- 25·C
125·C
......
.....
V
1/
./
G 4029
VCE~-10V
, 6 8 4 6 8 4 6 8
10.3 10-2 10-1 -Ic (A)
, 68
lQ-l
, 6 8
10- 1
, 68
-IC (A)
Transition frequency
Switching times
fT
(MHz)
75
50
25
~ "\.
/ \
7 \
VCE~-lOV
Tcase=25"C
G 4030
I---I---
,
2
8
1\
6
, If
"'"
"""
2
~n
1"
........
1--.
,...
t-
VCC~-150V
hFE ~10
161 ~-162
2
Is
G 4031
~
f------
10-1
6 8 6 8
10-2 10- 1 -IC (A)
6
10
--2
102 -IC !rnA)
8
623

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N 5671 and 2N 5672 are silicon multiepitaxial planar NPN transistors in Jedec TO-3
metal case.
They are especially intended for high current, fast switching industrial applications.
ABSOLUTE MAXIMUM RATINGS
2N5671
2N5672
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = -1.5 V, RBE = 50 Q)
Qollector-emitter voltage (R BE :::; 50 Q)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ie = 0)
Colle~tor current
Base current
Total power dissipation at Tease":; 25°C
Storage temperature
Junction temperature
120V 150V
120V 150V
110V 140V
90V 120V
7V
30A
10A
140W
-65 to 200°C
200 °0
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
6/77 624

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.25 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 'C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEV Collector cutoff for 2N5671 VCE = 110 V 12 mA
current (VBE = -1.5 V) for 2N5672 VCE = 135 V 10 mA
VCE = 100V
Tease = 150'C
for 2N5671 15 mA
for 2N5672 10 mA
ICEO Collector cutoff VCE = 80 V 10 mA
current (IB = 0)
lEBO Emitter cutoff VEB = 7 V 10 mA
current (Ic = 0)
V CEX (sust Collector-emitter Ic = 200 rnA
sustaining voltage for 2N5671 120 V
(VBE = -1.5V. for 2N5672 150 V
RBE = 50n)
V CER (sus) * Collector-emitter Ic = 200mA
sustaining voltage for 2N5671 110 V
(RBE = 50 n) for 2N5672 140 V
V CEO (sust Collector-emitter Ic = 200mA
sustainihg voltage for 2N5671 90 V
(I B= 0) for 2N5672 120 V
VCE(sat) * Collector-emitter Ie = 15 A IB = 1.2 A '" 0.75 V
saturation voltage
VBE(Sat) * Base-emitter Ic = 15 A IB = 1.2 A 1.5 V
saturation voltage
VBE * Base-emitter voltage Ic = 15 A VCE = 5 V 1.6 V
hFE * DC current gain Ic = 15 A VCE = 2 V 20 100 -
Ic = 20 A VeE = 5 V 20 -
fT Transition frequency Ic = 2A VCE = 10 V 50 MHz
625

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
Ccso Collector-base IE = 0 Vcs= 10 V
capacitance f = 1 MHz 900 pF
ton Turn-on time 0.5 J.1s
Ic = 15 A Vcc= 30 V
ts Storage time IS1 = -ls2 = 1.2A 1.5 fLs
t f Fall time 0.5 fLs
Is/b ** Second breakdown VCE = 24 V 5.8 A
collector current VCE = 45 V 0.9 A
Es/b Second breakdown VSE = -4 V, RSE = 20Q
energy L = 180 fLH 20 mJ
* Pulsed: pulse duration = 300 fLs, duty cycle 1.5%
** Pulsed: 1 s, non repetitive pulse
Safe operating areas
Ie 8
(AJ 6
10
I MAX PULSE OPERATION*
1
~~PERATION
" r-.,
~ t\.
50,us
500,u
3 s
~-
DC transconductance
G--l63 4/1
G-2640
Ie
(A) ~ =3V
30
11
20
*FOR SINGLE NON
REPETITIVE PULSE
2N5~71
4 68 4 68
10
L- 2N56'12
I II
III
10
10' o 0.5 1.5 VBE (V)
626

DC current gain
Collector-emitter saturation voltage
G 2635
veE (sat)-,- I
(V)
hH =10
(3..2641
Vc:E=3V
1.5
-
10' f--
I-- 11
\
10
I
lO-z 10 le(A)
0.5
I
I
10 Ie (A)
Base-emitter saturation voltage
Saturated switching characteristics
t
J
hFE =10
1.2
V
I
V
0.8
0.4
r--
~
G 2642
t
(1"5)
c---
r-- ~
I-t-
. Vee=30V
hFE=10
I B1 =-I B2
~ ton --
.....
~tf ./
G 2636
o
10 [e (A)
10- 2
10
627

EPITAXIAL PLANAR PNP
PNP SILICON TRANSISTORS
The 2N5679 and 2N5680 are silicon epitaxial planar PNP transistors in Jedec
TO-39 metal case intended for use as drivers for high power transistors in general
purpose, amplifier and switching circuit.
The complementary NPN types are the 2N5681 and 2N5682 respectively.
ABSOLUTE MAXIMUM RATINGS
2N5679
2N5680
VCSO
V CEO
VEBO
Ic
Is
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = OJ
Emitter-base voltage (Ic = 0)
Collector current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
-100V -120V
-100V -120V
-4V
-1A
-0.5A
10W
1W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
. CQllectarcannf;lcted toca~e
TO.,.39
5/80 628

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 17.5 °C/W
max 175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
IcBo Collector cutoff for 2N5679 VCB = -100V
current (IE = 0) for 2N5680 VCB = -120V
ICEV Collector cutoff for 2N5679 VCE = -100V
current for 2N5680 VCE = -120V
(VBE = 1.5) Tease = 150°C
for 2N5679 VCE = -100V
for 2N5680 VCE = -120V
ICEO Collector cutoff for 2N5679 VCE = -70V
current (IB = 0) for 2N5680 VCE = -80V
lEBO Emitter cutoff VEB = -4V
current (Ic = 0)
Min. Typ. Max. Unit
-1 /LA
-1 /LA
-1 /LA
-1 /LA
-1 mA
-1 mA
-10 /LA
-10 /LA
-1 /LA
V CEO (sus) * Co Ilector-em itter
sustaining voltage
(IB = 0)
VCE (sat) * Collector-emitter
saturation voltage
Ic = -10mA
for 2N5679
for 2N5680
Ic = -250mA IB = -25mA
Ic = -500mA IB = -50mA
Ic = -1A IB = -200mA
-100 V
-120 V
-0.6 V
-1 V
-2 V
VBE * Base-emitter Ic = -250mA VCE = -2V
voltage
hFE * DC current gain Ic = -250mA VCE = -2V
Ic = -1A VCE = -2V
fT Transition Ic = - 1 OOmA V CE = - 1 OV
frequency
f = 10MHz
CCBO Collector-base IE = 0 VCB = -20V
capacitance f = 1 MHz
hIe Small signal Ic = -0.2A VCE = -1.5V
current gain f = 1KHz
-1 V
40 150 -
5 -
30 MHz
50 pF
40 -
* Pulsed: pulse duration = 300/Ls, duty cycle ~2%.
629

EPITAXIAL PLANAR NPN
GENERAL PURPOSE TRANSISTORS
The 2N5681 and 2N5682 are silicon epitaxial planar NPN transistors in Jedec
TO-39 metal case intended for use as drivers for high power transistors in general
purpose amplifier and switching circuits.
The complementary PNP types are the 2N5679 and 2N5680 respectively.
ABSOLUTE MAXIMUM RATINGS
2N5681
2N5682
VCBO
VCEO
VEBO
Ic
IB
Ptot
Collector-base voltage (IE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (Ic = 0)
Collector current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
100V 120V
100V 120V
4V
1A
0.5A
10W
1W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DlAGR~:':
MECHANICAL DATA
Dimensions in mm
5/80 630

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 17.5 °C/W
max 175 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IC60 Collector cutoff for 2N5681 VC6 = 100V 1 /-LA
cu rrent (IE = 0) for 2N5682 VC6 = 120V 1 /-LA
ICEV Collector cutoff for 2N5681 VCE = 100V 1 /-LA
current for 2N5682 VCE = 120V 1 /-LA
(VSE = -1.5V) Tease = 150°C
for 2N5681 VCE = 100V 1 mA
for 2N5682 VCE = 120V 1 mA
ICEO Collector cutoff for 2N5681 VCE = 70V 10 /-LA
current (16 = 0) for 2N5682 VCE = 80V 10 /-LA
IE60 Emitter cutoff VE6 = 4V 1 /-LA
current (Ic = 0)
VCEO (sus)*Collector-emitter Ic = 10mA
sustaining voltage for 2N5681 100 V
(16 = 0) for 2N5682 120 V
VCE (sat) * Collector-emitter Ic = 250mA 16 = 25mA 0.6 V
saturation voltage Ic = 500mA 16 = 50mA 1 V
Ic = 1A 16 = 200mA 2 V
V6E * Base-emitter Ic = 250mA VCE = 2V 1 V
voltage
hFE * DC current gain Ic = 250mA VCE = 2V 40 150 -
Ic = 1A VCE = 2V 5 -
fT Transition Ic = 100mA VCE = 10V 30 MHz
frequency
f = 10MHz
CC60 Collector-base IE = 0 VC6 = 20V 50 pF
capacitance f = 1MHz
hIe Small signal Ic = 0.2A VCE = 1.5V 40 -
current gain f = 1 KHz
* Pulsed: pulse duration = 300/-Ls, duty cycle~2%.
631

EPITAXIAl·BASE PNP
SILICON HIGH POWER TRANSISTORS
The 2N 5875 and 2N 5876 are silicon epitaxial-base PNP power transistors in Jedec TO-3
metal case. They are intended for use in power linear and switching applications.
The complementary NPN types are the 2N 5877 and 2N 5878 respectively.
ABSOLUTE MAXIMUM RATINGS
V C80
V CEO
V E80
Ic
Collector-emitter voltage (18 = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease';;; 25°C
Collector-base voltage (IE = 0)
ICM
18
P tot
T stg Storage temperature
T j Junction temperature
2N5875 2N5876
-60V -80V
-60V -80V
-5V
-10A
-20A
-4A
150W
-65 to 200°C
20QoC
INTERNAL SCHEMATIC DIAGR~~'
E
MECHANICAL DATA
Dimensions in mm
6/77 632

I
t
THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.17 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min_ Typ_ Max_ Unit
IcBO Collector cutoff for 2N5875 VCB = -60V -0.5 mA
current (IE = 0) for 2N5876 VCB = -80V
,. .'
-0.5 mAo
ICEO Collector cutoff for 2N5875 VCE = -30V -1 mA
current (IB = 0) for 2N5876 VCE = -40V -1 mA
IcEX Collector cutoff for 2N5875 VCE = -60V -0.5 mA
current (VBE = 1.5 V) for 2N5876 VCE = -80V -0.5 mA
Tcase= 150 °C
for 2N5875 VCE = -60V -5 mA
for 2N5876 VCE = -80V -5 mA
lEBO Emitter cutoff VEB = -5 V -1 mA
current (Ic = 0)
V CEO (sust Collector-emitter Ic = -200 mA
sustaining voltage for 2N5875 -60 V
(\B = 0) for 2N5876 -80 V
VCE(sat) * Collector-emitter Ic = -5 A IB = -0.5A -1 V
saturation voltage Ic = -10A IB = -2.5A -3 V
VBE(sat) * Base-emitter Ic
saturation voltage
= -10A Ic = -2.5A -2.5 V
VBE* Base-emitter voltage Ic = -4A VCE = -4V -1.5 V
633

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
hFE * DC current gain Ic = -4A VCE = -4V 20
Ic = -10A VCE = -4V 4
fT Transition frequency Ic = -O,5A VCE = -1 OV 4
Ceso Collector-base Ves= -10V
capacitance f = 1 MHz IE = 0
t, Rise time Ie = -4A Vee= -30V
IS1 = -OAA
100 -
-
MHz
500 pF
0,7 fls
ts
tj
Storage time
Fall time
Ie = -4A Vee= -30V
IS1 = -ls2 = -O,4A
1 fls
0,8 fls
* Pulsed: pulse duration = 300 fls, duty cycle = 1,5%
Safe operating areas
-Ie
(A)
G -2721
10
Ie MAX PULSED
Ie M~X leolN+IJuous "
*I-'Ul::'t.
......
......
~I-' ,~A
~,
i
10}Js--
100}ls
!
- DC OPERATION
I
II
I II
* FOR SINGLE NON
REPETITIVE PULSE
, \
\
'I'
1ms
2N5875
2N5816
10ms-~
10
634

DC current gain
DC transconductance
G -2729
-VSE
(V)
(3-2130
10'
r-
1-0..
1.5
-VCp4V
10
4
-VCE=4V
0.5
"
10-'
4 6.
10-'
4 6 •
1
4 6 8 2
10-IC(A)
o
4
10 -IC(A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
-VCE(sat)
(V) 6
V
i;"
4 6 ,
1
. ~/
hFE =10
• 10
G-2731
4 , •
-IC (A)
-V SECsat )
(V)·
1.5
0.5
o
hFF=10
....... "'"
I
G-2732
4 , , 2 4 6. 2 4
,
10 -IC (A)
635

Collector-base capacitance
Saturated switching characteristics
cceo
(pF)
500
400
300
200
100
o
~
.....
r-.
.........
G 2'16
, ..
10 -Vce (V)
I
(,.,s)•
· ,
,
•
· ,
,
Is
-~I
- Ion
--
hFE=lO
VCC=-30V
IB1=-IB:
G-271
. ,
-IC(A)
Power rating chart
PIOI
(W)
G-2m
150
" I ...... .....
100
"- I"- l .....
"'
t-... 1'-.
50
o
50
100 150 Tease ('C)
636

EPITAXIAL·BASE NPN
SILICON HIGH POWER TRANSISTORS
The 2N 5877 and 2N 5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3
metal case. They are intended for use in power linear and switching applications.
The complementary PNP types are the 2N 5875 and 2N 5876 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current
18 Base current
P tot Total power dissipation at Tease"; 25°C
Tst9 Storage temperature
T j Junction temperature
2N5877 2N5878
60V 80V
60V 80V
5V
10A
20A
4A
150W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
Collector connected to case
TO-3
637
6/77

THERMAL DATA
Rlh j-case Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 2SoC unless otherwise specified)
Parameter Test con~iti~ns _ .. Min.dTyp_ Max. Unit
Icsc5 Collector cutoff for 2N5877 Vcs= 60V O.S mA
current (IE = 0) for 2N5878 Vcs= 80V O.S rnA
IcEO Collector cutoff for 2N5877 V CE = 30V 1 rnA
current (Is = 0) for 2N5878 V CE = 40V 1 mA
IcEX Collector cutoff for 2N5877 V CE = 60V O.S mA
current (V SE = -1.S V) for 2N5878 VCE = 80V O.S mA
Tease = 1 SO °C
for 2N5877 VCE = 60V S mA
for 2N5878 V CE = 80V S rnA
IESO Emitter cutoff V ES = S V 1 mA
current (lc = 0)
V CEO (sust Collector-emitter Ic = 200 mA
sustaining voltage for 2N5877 60 V
(Is = 0) for 2N5878 80 V
VCE (sal)* Collector emitter Ic =SA Is = O.SA 1 V
saturation voltage Ic = 10A Is = 2.SA 3 V
V SE (Sal)*
Base-emitter
saturation voltage
Ic = 10A Ic = 2.SA 2.S V
V SE * Base-emitter voltage Ic = 4A V CE = 4V 1.S V
638

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
hFE * DC current gain Ic = 4A VCE = 4V 20
Ic = 10A VCE = 4V 4
fT Transition frequency Ic = 0.5A VCE = 10V 4
Ccso Collector-base Vcs = 10V
capacitance f = 1 MHz IE = 0
tr Rise time Ic = 4A Vcc= 30V
IS1 = O.4A
ts
Storage time
Ic = 4A Vcc= 30V
t f Fall time IS1 = -ls2 = O.4A
100 -
-
MHz
300 pF
0.7 fLs
1 fLs
0.8 fLs
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
Safe operating areas
Ie
(Al
G -2120
10
Ie MAX PULSED *PUI 5E"
Ie M~X COUIJUOUS """
_.--
'-
~
r-------- DC OPERATION/"
"
III
III
* FOR SINGLE NON
REPETITIVE PULSE
yP :~A
"- '-
" \'
\\
10}Js - -
100}JS
1ms
-- -
2N5877
2N58i8
10ms-'---
10
639

DC current gain
DC transconductance
hFE
10 3 8
G -2733
VSE
(V)
Vr. = 4V
G-273l.
1.5
10'
--~
10
VCE = ltV
0.5
I--
.......
10-'
4 6.
10-1
4 6 8
4 6.
10IC(Al
. 4 ; B 4 6 •
10-1 10 Ie (A)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat )
;
(V)
hFE = 10
i
+-
G-2736
VBE(sat )
(V)
1.5
hFE= 10
G- 735
10-1
.
I
,
0.5
f--
/' 1/ I
~
10-'
10-1
4 6 •
1
4 ;.
10 Ie (A)
o
4 6' B , 6 B
10 Ie (A)
640

cceo
(pF)
Collector-base capacitance
G 2122
I
1 ..... 5)
,
Saturated switching characteristics
-
500
400
r--..!!.
-
hFE=10
Vee=3OV
181=-1
300
200
........
~ If n
.-
100
o
I'-....
, , , , , , .
10
......
, , ,.
Vee (V) 10-1
. ,
, ,
le(A)
Power rating chart
Plot
G- 717
(W)
150
100
50
i"
.......
""
I'..
" I'. I .......
""
o
50 100
'" ~
641

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS
The 2N 6032 and 2N 6033 are silicon multiepitaxial planar NPN transistors in modified
Jedec TO-3 metal case.
They have high current, high power handling capability, fast switching speed and are
intended for use in switching and linear applications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
V CBO
V CEX
VCER
V CEO
V EBO
Ic
'B
P tot
T stg
Collector-emitter voltage (VBE = -1.5 V, RBE = 500)
Collector-emitter voltage (RBE = 50 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Base current
Total power dissipation at T case';;;; 25 DC
Collector-base voltage (IE = 0)
Storage temperature
T j Junction temperature
2N6032 2N6033
120V 150V
120V 150V
110V 140V
90 120V
7V 7,V
50A 40A
lOA
140W
-65 to 200 DC
200 DC
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
6/77 642

THERMAL DATA
Rth I-case Thermal resistance junction-case max 1.25 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 'C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcEV Collector cutoff for 2N6032
current (VBE = -1.5 V) VCE = 110V 12 mA
VCE = 100V Tease = 150'C 15 mA
for 2N6033
VCE = 135V 10 mA
VCE = 100V Tease = 150'C 10 mA
IcEO Collector cutoff VCE = 80 V 10 mA
current (I B = 0)
lEBO Emitter cutoff VEB = 7V 10 mA
current (lc = 0)
V CEX (sus)* Collector-emitter Ic = 200 mA
sustaining voltage for 2N6032 120 V
(VBE = -1.5V, for 2N6033 150 V
RBE = 50S1, L=2mH)
V CER (SUS)* Collector-emitter Ic = 200mA
sustaining voltage for 2N6032 110 V
(R SE =50S1, L= 15mH) for 2N6033 140 V
V CEO (SUS)* Collector-emitter Ic = 200mA
sustaining voltage for 2N6032 90 V
(lB = 0) for 2N6033 120 V
V CE (sat) * Collector-emitter for 2N6032
saturation voltage Ic = 50 A IB = 5A 1.3 V
for 2N6033
Ic = 40 A IB = 4A 1 V
VBE (sat) * Base-emitter for 2N6032
saturation voltage Ic = 50 A IB =5A 2 V
for 2N6033
Ic = 40 A IB =4A 2 V
643

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
VBE * Base-emitter voltage for 2N6032
Ic = 50A VCE = 2 V
for 2N6033
Ic = 40 A VCE = 2 V
hFE * DC current gain for 2N6032
Ic = 50 A VCE = 2.6 V
for 2N6033
Ic = 40A VCE = 2 V
h fe Small-signall Ic =2A VCE = 10 V
current gain f = 5 MHz
CCBO Collector-base IE = 0 VCB = 10 V
capacitance f = 1 MHz
for 2N6032
tr Rise time Ic = 50A Vcc= 30 V
IB1 = -ls2 = 5A
ts Storage time for 2N6033
t f Fall time
Ic = 40A Vcc= 30 V
IS1 = -IB2 = 4A
ISlb ** Second breakdown VCE = 24 V
collector current VCE = 40 V
ES/b Second breakdown VBE = -4 V, RsE = 5 n
energy L = 310 f1H
2 V
2 V
10 50 -
10 50 -
10 -
800 pF
1 f1s
1.5 f1s
0.5 f1s
5.8 A
0.9 A
62 mJ
* Pulsed: pulse duration = 300 f1s, duty cycle = 1.5%
** Pulsed: 1 s non repetitive pulse
644

Safe operating areas
DC current gain
IC ,
(A) 6
10
f=i::::j
_PULSE OPERATION
10ms 30~
P(
3m.
1m. ~
~ 1\
500l's
DC
OPERATION
IIIIIIII
- FOR SINGLE NON
REPETITIVE PULSE 1\
G 2696
10 1" r--tttt
IC ~~~O~~NT
~ MAX CON
2N6033
v r-... VCE=SV
80 "- '\.
60
40
\
IV
\
G 2698
20
2N6032-
2N6033
,
10
, 6'
10'
, 6'
VCE (V)
o , , 6 , , , 6 , ,
10-1 10 IC (A)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat),
(V) 6
G 2697
VCE(sat )
(V)
I
G 2701
hFE=10
1.6
I
1.2
10-1
,
/
,/
0.8
30A
IC =40A
0.4
"SA
20A
"""!:..
I
6 ,
10 IC (A)
o
16 (A)
645

Base-emitter saturation voltage
Collector-base capacitance
VBE(sal )
(V)
I_I
0.9
hFE =10
7
V
1/
G-' 699
11
eeBO
(pF)
1000
800
600
\
r\.
t'-... -r-.-r-
Go 2702
0.8
0.7
0.6
.......
'"
-
400
200
0.5
6 • , 8
10 'e (A)
o
12 16 20 VeB (V)
I
(I's)
1.5
Saturated switching characteristics
Vee =3DV
'BI =-'82
hFE=IO
-
G 2703
PIOI
(W)
140
120
Power rating chart
G 2700
100
5
80
l'
60
0.5
I~
I.- W-
40
20
l"-
I"-
1'\
I"
I"
1'\
1'\
l"-
I"
I"
I"
I"
1'\
1'\
If
o
10 20 30 40 'e (A)
o
50 100 150 Tease rC)
646

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTONS
The 2N 6034, 2N 6035 and 2N 6036 are silicon epitaxial-base PNP power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-126 plastic package.
They are intended for use in medium power linear and switching applications.
The complementary NPN types are the 2N 6037, 2N 6038 and 2N 6039 respectively.
ABSOLUTE MAXIMUM RATINGS
V C60 Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (16 = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current
16 Base current
P tot Total power dissipation at Tease ~ 25°C
T stg Storage temperature
T j Junction temperature
2N6034 2N6035 2N6036
-40V -60V -80V
-40V -60V -80V
-5V
-4A
-8A
-100mA
40W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGRAM
c
,-------1
I
B I I
I
I R1 R2 I
L_, ______,~ R1Typ.lOkn
R21yp.150n
MECHANICAL DATA
Dimensions in mm
(1) Within this region the cross-section of the leads is uncontrolled
1.2
Q58
1.2
TO-126 (SOT -32)
647
6/77

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.12 ·C/W
S3.3 ·C/W
ELECTRICAL CHARACTERISTICS (Tease = 25·C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO Collector cutoff for 2N6034 VCB = -40V
current (IE = 0) for 2N6035 VCB = -60V
for 2N6036 VCB = -SOV
ICEO Collector cutoff for 2N6034 VCE = -20V
current (lB = 0) for 2N6035 VCE = -30V
for 2N6036 VCE = -40V
IcEX Collector cutoff for 2N6034 VCE = -40V
current (V EB = -1.5V) for 2N6035
for 2N6036
VCE = -60V
VCE = -SOV
Tease = 125 ·C
for 2N6034 VCE = -40V
for 2N6035 VCE = -60V
for 2N6036 VCE = -SOV
lEBO Emitter cutoff VEB = -5V
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = -100mA
sustaining voltage
for 2N6034
(lB = 0)
for 2N6035
for 2N6036
VCE(sat) * Collector-emitter Ic = -2A IB = -SmA
saturation voltage Ic = -4A IB = -40mA
VBE * Base-emitter voltage Ic = -2A VCE = -3V
hFE * DC current gain Ic = -0.5A VCE = -3V
Ic = -2A VCE = -3V
Ic = -4A VCE = -3V
hIe Small signal current Ic = -0.75 VCE = -10V
gain f = 1 MHz
CCBO Collector-base VCB = -10V
capacitance f = 1 MHz IE = 0
-500 ftA
-500 ftA
-500 ftA
-500 ftA
-500 ftA
-500 A
-0.5 mA
-0.5 mA
-0.5 mA
-2 mA
2 mA
-2 mA
-2 mA
-40 V
-60 V
-SO
V
-2 V
-3 V
-2.S
V
500 -
750 15000 -
100 -
1 -
200 pF
* Pulsed: pulse duration = 300 !-Is, duty cycle = 1.5%
648

Safe operating areas
-IC
(A)
10
I
I=Ic MAX PULSED
I
.~U~S~
OPERATIC N
e-Ic ~AXI C6JTII~UOUS 1\ 1\
,
I \ \
'"
DC OPERATION
~ \
1\ ~
G -Z760
10}'s- ~
100}'s
f-* FOR SINGLE NON
I--REPETITIVE PULSE
10
2N6034 - f-e ~
2N6035
2N60~6
lms-I--
III
IjJ ,-I--
11r s
10 2 -VCE (V)
DC current gain
DC transconductance
•
,
,
,
/
V
v
veE~-3V
1'-..
1\
G-2751.
-Ie
(A)
VCE~-3V
rl
G 2741
10'
, ,
-Ie (A) 0.5
l..I
1.5 -VBE (V)
649

Collector-emitter saturation voltage
Collector-emitter saturation voltage
-VCE(sat) ..---.--,-,-,-...,....,rrT-r---r_..-T""""1,...,liG-~2~"'"
(v)
-VCECsat
(V)
)
6-2750
1.5
"
I =3A
21
IA
o.5A
0.5
o
o
-18 (mA)
• ,
4
2
10'
•
4
Small signal current gain
K
1\
G 2624
t
().Is)
Saturated switching characteristics
VCC=-30V
hFE·250
181=-182
,-""
2
10'
•
4
2
10
•
4
VeE =-IOV
Ie =-0.7 SA
1\
If
•
on
~
"'-
2
46S'
10·'
4 II B 2 468 2 468
10·'
'(MHz)
•
-lelA)
650

EPITAXIAL·BASE NPN
MEDIUM POWER DARLINGTONS
The 2N 6037, 2N 6038 and 2N 6039 are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-126 plastic package.
They are intended for use in medium power linear and switching applications.
The complementary PNP types are the 2N 6034, 2N 6035 and 2N 6036 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at Tease";: 25°C
T stg Storage temperature
T j Junction temperature
2N6037 2N6038 2N6039
40V 60V 80V
40V 60V 80V
5V
4A
8A
100mA
40W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGRAM
,~~-----l
B 1 I
I
I
I
I R1 R2 I
L ______.~ R1Typ.lOkfi
R2Typ.150n
c
MECHANICAL DATA
Dimensions in mm
7.8 max
Q9m,,,
{t) Within this regiOn Itw- cross~$E'ctlon of thE' leads is uncontrolte-d
4.4
"'"
TO-126 (SOT -321
651
6/77

THERMAL DATA
Rth i-case
Rthi-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
max
3.12 °C/W
83.3 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcBO Collector cutoff for 2N6037 VCB = 40V
current (IE = 0) for 2N6038 VCB = 60V
for 2N6039 VCB = 80V
ICEO Collector cutoff for 2N6037 VCE = 20V
current (IB = 0) for 2N6038 VCE = 30V
for 2N6039 VCE = 40V
ICEX Collector cutoff for 2N6037 VCE = 40V
current (VEB = 1.5V) for 2N6038 VCE = 60V
for 2N6039 VCE = 80V
Tcase= 125°C
for 2N6037 VCE = 40V
for 2N6038 VCE = 60V
for 2N6039 VCE = 80V
lEBO Emitter cutoff VEB = 5V
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = 100mA
sustaining voltage
for 2N6037
(IB = 0)
for 2N6038
for 2N6039
VCE(sat) * Collector-emitter Ic = 2A IB = 8mA
saturation voltage Ic = 4A IB =40mA
VBE * Base-emitter voltage Ic = 2A VCE = 3V
hFE * DC current gain Ic = 0.5A VCE = 3V
Ic = 2A VCE = 3V
Ic = 4A VCE = 3V
hIe Small signal current Ic = 0.75A VCE = 10V
gain f = 1 MHz
CCBO Collector-base VCB = 10V
capacitance f = 1 MHz IE = 0
500 fLA
500 fLA
500 fLA
500 fLA
500 fLA
500 fLA
0.5 mA
0.5 rnA
0.5 m:A,.
2 mA
2 mA
2 mA
2 mA
40 V
60 V
80 V
2 V
3 V
2.8 V
500 -
750 15000 -
100 -
1 -
100 pF
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
652

Safe operating areas
IC
(A)
10
~IC MAX PULSED
*Ju~sk
OPERATION
"
f-Ic MAXi cbNrlNuous 1\ 1
l'
~ \ \
DC OPERATIbN
-* FOR SINGLE NON
- REPETITIVE PU LS~
" ,
\ \ , ~
",
2N6037 - r+ ~
2N6038
2N60~9
G - 2761
1Ous-e----
1 IO}lS
lms-~
II
!l
,r S -
-
10
DC current gain
DC transconductance
"FE,
6-2757
IC
(AI
I
G-2740
II
1/1'
""" ~
VCE =3V
10>
/ V "cE·3Y
10'
10-1
• •
••
Ie (AI
o
0.5
LI
1.5 VeE (VI
653

Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat )
(v)
hFP250
G-l645
1.5
I)
\
r--
G-2746
IC=3A f-
2A
lA
-"
./
0.5
0.5
o
IS (rnA)
10' ,
10' ,
10,
6
Small signal current gain
VCE =10V
§ IC =0,75A
1111111
\ 1111111
G 2790
I
I
(~s)
Saturated switching characteristics
.... ,
I.
-If
on .....;-
VCE=30V
hFE=250
lSI =-IS2
---
..... "..
1111111 1111111
2 468 2 468 2 468 2 i, 68 2 10 68
10" 10" 10-' 10 f (MHz)
Ie (A)
654

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The 2N 6050, 2N 6051 and 2N 6052 are silicon epitaxial-base PN Ptransistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case. They
are intended for use in power linear and switching applications.
The complementary NPN types are the 2N 6057, 2N 6058 and 2N 6059 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (I E = 0)
V CEO Collector-emitter voltage (I B= 0)
V EBO Emitter-base voltage (I c=O)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at T case ::;25°C
Tst9 Storage temperature
T j Junction temperature
2N6050 2N6051 2N6052
-60V -80V -100V
-60V -80V -100V
-5V
-12A
-20A
-0.2A
150W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
Collector connected to case
Bo--r~'
R'
R2
Rl TVP =10Kfi
R2 TYP =1500.
26 zma x
[1
10E 1 e ..7 M max ",.117
{I· 9
c
E
Dimensions in mm
TO-3
655 10/82

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
IcEO Collector cutoff for 2N6050
current (Is = 0) for 2N6051
VCE = -30V
VCE = -40V
for 2N6052 VCE = -50V
IcEX Collector cutoff for 2N6050 VCE = -60Y
current (VE·S= -1.5V) for 2N6051 VCE = -80V
for 2N6052 VCE = -100V
Tease = 1 50°C
for 2N6050 VCE = -60V
for 2N6051 VCE = -80V
for 2N6052 VCE = -100V
IESO Emitter cutoff VES = -5V
.
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = -100mA
sustaining voltage
for 2N6050
(Is = 0)
for 2N6051
for 2N6052
VCE(sat) * Collector-emitter Ic = -6 A Is =-24mA
saturation voltage Ic = -12A Is = -120mA
VSE (sat)* Base-emitter Ic = -12A Is = -120mA
saturation voltage
VSE * Base-emitter voltage Ic = -6A VCE = -3V
hFE * DC current gain Ic = -6A VCE = -3V
Ic = -12A VCE = -3V
hie Small signal Ic = -5A VCE = -3V
current gain f = 1 MHz
Ccso Collector-base Vcs= -10V
capacitance f = 1 MHz IE = 0
-1 mA
-1 mA
-1 mA
-Q.5 mA
-0.5 mA
-0.5 mA
-5 mA
-5 mA
-5 mA
-2 mA
-60 V
-80 V
-100 V
-2 V
-3 V
-4 V
-2.8 V
750 18000 -
100 -
4 -
500 pF
* Pulsed: pulse duration = 300 flos, duty cycle = 1.5%
656

.~.
-Ie e
r== •...
(A) 6
Safe operating areas for 2N6050
IC MAX PULSED
IC MAX CONTINUOUS'
10 ' B F= DC OP R JI N
O.5ms
f-.--l-
*FOR SIIIGLE NON
J-.- REPETITIVE PULSE
II
G 3734
PULSE OPERATION*(.
i'- i"l\ 0.1
ms
,
Ims
5ms +-1-\-1\
I 1\
. ,
10 -VCE(V)
-Ie 6
(A) •
10
,
Safe operating areas for 2N6051
F=
r=
G 3735
Ic MAX PULSED i
*PULSE OPERA ION
IC MAX CONTINUOUS I' 1'-0.1
f--.
~
1\ m
1 ms
1 5msr- j-., 1\1 , I
,
DC OPERAT ION
*FOR SINGLE NON
f--- REPETITIVE PULSE
11 T I
. ,
10 -VCE (V )
Safe operating areas for 2N6052
-Ic B F.+-, ... ~
( A ) 6 ... t +-"+-H'+
G 3736
j--..
~ .. ~~ ~-t--t11 '
f-rcMAtpULSE5 i ·~:-+-I+-~'~P~U"JL~SE-JO-PII,...(Ar.II"b4j
r ~lc~M-A~X~C01N~T1IN;urorUS~~~ji"-..,~fi"~~I'~0~;;/~S~
10 , ' r----- 0.5 ms
Ims
I 5ms
, DC OPERATION
'~~§m1
S. FOR SINGLE NO~_
REPETIT V~ ,JPt;!'''4'''P> ",,,--F_+--+-++-H~
I I 111111
,
,1------+---+--+.f-H-jIII-J+-11 --+-+-+++h\t1
10" L-_...L_.L..l..-L..l..Ll...Ll. __.L.-'-'....l.J...LLJ.JI
. 6 ,
10 -'k:E(V)
657

DC current gain
G - 4868
Collector-emitter saturation voltage
G 3739
-VCE(sa 0
(V)
rTl
IC=-3I -6A
-lOA
I
-12A
I
~I-:----~_--+-_T_
10' ,
F=
, VCE=3V
I
10J
,
10'
/
/
V
10-'
I
1I
-- 12S·C I
.... 1\
25'C I=:
II
I
.I! I ill
1\-40'C, =~
10
i
, '8
a
10-1
4 68
I
4 68
I \
\
10
1\ ,
I
I
4 68
-Ie (rnA)
VCE(sat)
(V)
,
10-1
Collector-emitter saturation voltage
hFE=250
,
-
G 4867
, 1/
I
i
!! i
• 10
II II
, 68
le(A)
Base-emitter saturation voltage
) f=:---
VSE(sat )1--
(V
f--
f--f----
1--- --- .
,
I-
f--I-
t-""
8
I
hFE =250
-
T
-"
I
__ J.....-
ITi-----
--
G 4866
I
i! I
II
, 6 ,
10 >erA)
658

DC transconductance
Collector-base capacitance
-IC
(A)
12
I
VCE ;-3V
,
G 3742
CCBO 8
(pF)
--
--r---
G - 3143
J
II
1--.
-... .....
I
4
o
:
1/
I
I
I
0.8 1.6
10
6 6
10
, .
-VCB(V)
10'
8
;
10
:~--
Small signal current gain
~j=!
, :Jj--- -,-;--
., =f-+tJlllf - .
'ffit- .
,
,
10' i , ,I
8
G-37L,4
II i 11\
,
I,',
6 ~- ~
,-
't=t=="~ p [tt---
,
, i il i ,
! I
:~Tcas.; 25°C~
I' , I
,~: VCE=-3V _' Ir-.--t--t-._
,0IC=-5A
L 1
m;I'-
I
, 68
I
,
!l~~~
•
-
,
iT I"
"
I 'I iii 1111111 I II"N
t
{pS)8
Saturated switching characteristics
h FE"250
VCC =-30V
181=1B2
tf
~
." ......
ton
........
G 4878
6 ,
10 IC(A)
" 8
10-1 f (MHz)
659

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The 2N 6053 and 2N 6054 are silicon epitaxial-base PNP transistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended
for use in power linear and switching applications.
The complementary NPN types are the 2N 6055 and 2N 6056 respectively.
ABSOLUTE MAXIMUM RATINGS
VCSO Collector-base voltage (IE = 0)
VCEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current
Is Base current
P tot Total power dissipation at Tease ~ 25°C
T stg Storage temperature
T j Junction temperature
2N6053 2N6054
-60V -80V
-60V -80V
-5V
-8A
-16A
-120mA
100W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
Rl Typ.lOkn
R2 Typ. 150n
Dimensions in mm
6/77 660

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.75 'C/W
ELECTRICAL CHARACTERISTICS (Tease =
25'C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICEX Collector cutoff for 2N6053 VCE = -60V
current (VBE = 1.5V) for 2N6054 VCE = -SOV
Tease = 150 'C
for 2N6053 = -60V
for 2N6054 VCE = -SOV
ICEO Collector cutoff for 2N6053 VCE = -30V
current (IB = 0) for 2N6054 VCE = -40V
lEBO Emitter cutoff VEB = -5V
current (Ic = 0)
V CEO (sust Collector-emitter Ic = -100mA
sustaining voltage
for 2N6053
(IB = 0)
for 2N6054
VCE (sat) * Collector-emitter Ic = -4A IB = -16mA
saturation voltage Ic = -SA IB = -SOmA
VBE (sat)* Base-emitter Ic = -SA IB = -SOmA
saturation voltage
VBE' Base-emitter voltage Ic = -4A VCE = -3V
hFE * DC current gain Ic = -4A VCE = -3V
Ic = -SA VCE = -3V
hIe Small signal Ic = -3A VCE = -3V
current gain f = 1 MHz
CCBO Collector-base VCB = -10V
capacitance f = 1 MHz IE = 0
-500 flA
-500 flA
-5 mA
-5 mA
-0.5 mA
-0.5 mA
-2 mA
-60 V
-SO
V
-2 V
-3 V
-4 V
-2.S
750 1S000 -
100 -
4 -
V
300 pF
* Pulsed: pulse duration = 300 fls, duty cycle = 1.5%
661

Safe operating areas
-IC
(Al
10
8
IC MAX PULSED I I
"
IC MAX CONTINUOUS
"
DC OPE~ATlON '"
"-"\
'lms
5ms
\,
,
~
~
\\
C;-2522
00 ~s
2N6053
2N6054
"
6 B
10
DC current gain
DC transconductance
G-2521
-Ie
(A)
V E=-3V
G 2524
10'
V V
VCE=-3V
:--......
i\[\
6
4
~
10'
6 ,
-le(A)
o
0.5
662

Collector-emitter saturation voltage
Collector-emitter saturation voltage
-VCE(sat)
(V)
hFE=250
G 2525
-VCE(sat) f--+-+--t-t-ttH+--t--++++tl-tt--t--t-ti+Hit
(V)
-I =3A -I = -IC=8A
:.-
o
10 -IC (Al
o
10 -IB(mA)
Ccso ,
(pF) ,
10'
Collector-base capacitance
- --
G -2404
Small signal current gain
h'e ,
~~~~If~~~;;~~~~~fiG-~2'4013;
VCE=-3V
IC=-3A
10':m •• nll~1
mml
10':m •••
10
10
, ,
10
2 468
10-3 10- 2
4.'
10- 1
468 2 468
f(MHz)
663

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The 2N 6055 and 2N 6056 are silicon epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case intended for use in
power linear and switching applications.
The complementary PNP types are the 2N 6053 and 2N 6054 respectively.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (IE = 0)
V CEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at T case"'; 25°C
T stg Storage temperature
T j Junction temperature
2N6055 2N6056
60V 80V
60V 80V
5V
8A
16A
120mA
100W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGRAM
c
,-------1
I
I
B I I
I
I R1 R2 I
L _______ ~ R1Typ.lOkfi
R2Typ.150n
MECHANICAL DATA
Dimensions in mm
6/77 664

I
I
THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.7S °C/W
ELECTRICAL CHARACTERISTICS (Tease =
2SoC unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICEX Collector cutoff for 2N6055 V CE = 60V
current (V BE = -1.SV) for 2N6056 V CE = 80V
Tease = 1 SO °C
for 2N6055 V CE = 60V
for 2N6056 V CE = 80V
ICEO Collector cutoff for 2N6055 VCE = 30V
current (lB = 0) for 2N6056 V CE = 40V
SOO
SOO
S
S
O.S
O.S
fLA
fLA
mA
mA
mA
mA
lEBO Emitter cutoff VEB = SV
current (lc = 0)
V CEO (SUS)* Collector-emitter Ic = 100mA
sustaining voltage
(lB = 0)
for 2N6055
for 2N6056
2 mA
60 V
80 V
VCE (sat) * Collector-emitter Ic = 4A IB = 16mA
saturation voltage Ic = 8A IB = 80mA
2 V
3 V
VBE (sat) * Base-emitter Ic
saturation voltage
= 8A IB = 80mA
4 V
VBE * Base-emitter voltage Ic = 4A VCE = 3V
hFE * DC current gain Ic = 4A VCE = 3V
Ic = 8A VCE = 3V
hIe Small signal Ic = 3A VCE = 3V
current gain f = 1 MHz
CCBO Collector-base VCB = 10V
capacitance f = 1 MHz IE = 0
2.8 V
7S0 18000 -
100
4 -
200 pF
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.S%
665

Safe operating areas
IC
(Al
10
8
I I
IC MAX PULSED I I
IC MAX CONTINUOUS
DC
OPERATION
"
~
r'I...
"
N..ms
5ms
\
~ ,
, ,
G-2523
OO~s
2N6055
2N6056
6 B
10
6 B 2
Id VCE (Vl
DC current gain
DC transconductance
G 2528
IC
(A)
v =3V
G 2531
10'
-.......J,
,/
~
VCE=3V
./
"
1
10'
6 ,
IC(A)
o
o.s
v
666

Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat )
(V)
hFE =250
G 2529
VCE(sat )
(V)
G 2530
I =J.O IC=6A I _SA
\
\
"'"
'\
o
10
IC (A)
o
10 IS(mA)
Small signal current gain
Collector-base capacitance
10
• ,
4
,
10'
•
,
,
10'
•,
,
• ,
, ..
10.2
\
VCE=3V
IC=3A
1\
G 240f
4 ..
I (I. 1Hz)
10'
10
- -r-
10
G 2402
667

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The 2N 6057, 2N 6058 and 2N 6059 are silicon epitaxial-base NPN transistor in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case. They
are intended for use in power linear and switching applications.
The complementary PNPtypes are the 2N 6050, 2N 6051 and 2N 6052 respectively.
ABSOLUTE MAXIMUM RATINGS
VCBO Collector-base voltage (I E = 0)
V CEO Collector-emitter voltage (I B = 0)
V EBO Emitter-base voltage (I C= 0)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at T case .:0:25 °C
T stg Storage temperature
T j Junction temperature
2N6057 2N6058 2N6059
60V 80V 100V
60V 80V 100V
5V
12A
20A
0.2A
150W
-65 to 200°C
200°C
INTERNAL SCHEMATIC DIAGRAM
;-----
MECHANICAL DATA
Dimensions in mm
10/82 668

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.17 °C/W
ELECTRICAL CHARACTERISTlCS(T case=25°C unless otherwise specified)
-
Parameter Test conditions Min. Typ. Max. Unit
IcEO CXlllector cutoff for 2N6057 V cE=30V 1 mA
current (I B=O) for 2N6058 V CE=40V 1 mA
for 2N6059 V CE=50V 1 mA
IcEX CXlllector cutoff for 2N6057 V CE=60V 0.5 mA
current (V BE=O) for 2N6058 V CE=80V 0.5 mA
for 2N6059 V CE=100V 0.5 mA
Tcase=150°C
for 2N6057 V CE=60V 5 mA
for 2N6058 V CE=80V 5 mA
for 2N6059 V cE=100V 5 mA
lEBO Emitter cutoff V EB=5V 2 mA
current (I C = 0)
V CEO (sus) *CXlllector-emitter Ic =100mA
sustaining voltage for 2N6057 60 V
(lB = 0) for 2N6058 80 V
for 2N6059 100 V
V CE (sat) * CXlllector-emitter Ic =6A I B =24mA 2 V
saturation voltage Ic =12A IB =120mA 3 V
V BE(sat) * Base-emitter Ic =12A IB =120mA 4 V
saturation voltage
VBE * Base-emitter voltage Ic =6A V CE=3V 2.8 V
h FE * DC current gain Ic =6A V CE=3V 750 18000 -
Ic =12A V CE=3V 100 -
hfe Small signal Ic =5A V cE=3V
current gain f =1 MHz 4 -
CCBO CXlllector-base V CB=10V
capacitance f =1 MHz IE =0 300 pF
* Pulsed: pulse duration =300 IlS, duty cycle :s; 1.5%
669

Safe operating areas for 2N6057
Safe operating areas for 2N6058
IC "
(A) ,
G 3759
IC 8
(A) ,
G 3760
10
IC MAX PULSED
PU SE OPERATION
IC MAX CONTINUOUS ...... 1'-, I"'~
0.1
ms
=
DC
OPER JION
O.5ms
'ms
5ms f--f+ \
\ \
10
IC MAX PU~SED
IC MAX CONTINUOUS
*PULSE OPERATION
...... ~ :'- r-.0" 1\ m
ms
'ms
5msi --->
\,\
10-1
*FOR SINGLE NON
REPETITIVE PULS
I I
II
II
.\
,0
10-1
*FOR SINGLE NON
I------ REPETITIVE PULSE
DC OPERATION
11111
,0 VCE (V)
Safe operating areas for 2N6059
'C B c-
G- 3761
, c--------- , 0,5 ms I-f-'l.
- ~--1 -++: +!+-,-i-l,,'-"'-"=msF-T
. ,I' Oms ' -
iii i : DC OPERATION
670

1
I.
~
10' 8
10' 8
DC current gain
VCE o3V
~
25·
-4;1...;
i
(, 1.872
V
~ V , ,
VCE(s,t)
(V)
Collector-emitter saturation voltage
3A
6A
f- lOA
1+ 12A
\
IC:
G 1,867
10'
II!
, '8
10
'.
II
o
10-1
I
to
IB(mA)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(satl
(V)
,
I
--
G 4871.
n
,
'hFEo25C II
·1 ~i
: I
! i 11 ./ Iii
I
I
,
10-1
I
I ]I
I
,
'-r
Ii I
I Ii i ! I:'
1111
I:!
11
I
,Iii . II i [lill
II II'
, 68
'C(A)
'Trt f--.
II
I I"
! !i I I ~~
I
I
!
, , 8
10-1 1 10 Ic(A)
I IIII 11 i rt ~
671

DC transconductance
Collector-emitter saturation voltage
IC
(A)
I
VCE ,3V
G 3766
CC60
(pF)
G 3767
12
I
II
I
IT
10'
1---- .- ..
.
t--- I-- r-
o
II
I
0.8 1.6
10
i I
._L
i
I
VC6 (V)
hto
Small signal current gian
8
~l
"18 Ill"
5 -.;.
, i .
1--...,- -+ .
,
:
~
10'
..
8
6 i3=f .e,
""
iTT,
2 ~ 6 8 2 4 6 8 2 4 6 8
10-3 10-2 10-1
G 3768
2 468
t (MHz)
,
(I'S )
6
Saturated switching characteristics
G 467£
I
,
I I
II
I ......;.-J. 4- I ' I
,
H-,'t I i I I
./
VCC-=30V I i I I
! I ! i
V I '61"62 ' i II '
i-r-~
hFE,250 ~
l=t
8~ Ion
6
4
I
I,
t--+-+-t:
II
!
~+I
I~T ,
11 I
i ! i I
,
iii
I
!
!
i I
I : i
1 i : I i I
10
672

EPITAXIAL-BASE NPN/PNP
L.
GENERAL PURPOSE COMPLEMENTARY PAIRS
The 2N 6107, 2N 6109, 2N 6111, 2N 6288, 2N 6290 and 2N 6292 are epitaxial-base silicon
transistors in Jedec TO-220 plastic package. They are intended for a wide variety of
medium power switching and linear applications.
The PNP types are the 2N 6107, 2N 6109, 2N 6111 and their complementary NPN types
are the 2N 6292, 2N 6290 and 2N 6288 respectively.
ABSOLUTE MAXIMUM RATINGS
Vcso Collector-base voltage (IE = 0)
V CEX Collector-emitter voltage (RSE = 100Q)
VCEO Collector-emitter voltage (Is = 0)
V ESO Emitter-base voltage (lc = 0)
Ic Collector current
Is Base current
P tot Total power dissipation at Tease";; 25 'C
T stg Storage temperature
T j Junction temperature
PNP' 2N6107 2N6109 2N6111
NPN
2N6292 2N6290 2N6288
80V 60V 40V
80V 60V 40V
70V 50V 30V
5V
7A
3A
40W
-65 to 150 'C
150'C
, For PNP devices voltage and current values are negative
:4'
INTERNAL SCHEMATIC DIAGRAMS
~~'
MECHANICAL DATA
"'1E
E
Dimensions in mm
Collector connected to tab.
673 6/77

THERMAL DATA
Rth j-ease
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 3.125 °C/W
max 70 °C/W
ELECTRICAL CHARACTERISTICSo (Tease = 25°C unless otherwise specified)
Test conditions
2N6111 2N6109 2N6107 PNP
2N6288 2N6290 2N6292
NPN
Parameter Vce(V) Ic(A) IB(A) Min. Max. Min. Max. Min. Max. Unit
IcEX (VEs=1.5V) 80 0.1
60 0.1
40 0.1
70 2
Tease = 1 50°C 50 2
30 2
ICEO (Is = 0) 60 1
40 1 mA
20 1
IESO (VES= 5 V) 0 1 1 1 mA
V CER (sus) *(RSE = 100n) 0.1 40 60 80 V
VCEO (sus) * 0.1 0 30 50 70 V
VCE (sat) *
VSE *
hFE*
2 0.2 1
2.5 0.25 1
3 0.3 1
7 3 3.5 3.5 3.5
4 2 1.5
4 2.5 1.5
4 3 1.5
4 7 3 3 3
4 2 30 150
4 2.5 30 150
4 3 30 150
-
4 7 2.3 2.3 2.3
hIe (f = 50 kHz) 4 0.5 20 20 20 -
fr
PNP types 4 0.5 10 10 10
NPN types 4 0.5 4 4 4
Ccso (f= 1MHz, Vcs= 10V) 250 250 250 pF
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
° For PNP devices voltage and current values are negative
For characteristic curves see the BO 533 (NPN) and BO 534 (PNP) series
674
mA
V
V
MHz

EPITAXIAL-BASE NPN
I
r
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 6121, 2N 6122 and 2N 6123 are silicon epitaxial-base NPN power transistors in
Jedec TO-220 plastic package, intended for use in medium power linear and switching
applications.
The complementary PNP types are the 2N 6124, 2N 6125 and 6126 respectively.
ABSOLUTE MAXIMUM RATINGS
2N6121
2N6122 2N6123
V CBO Collector-base voltage (IE = 0)
V CES Collector-emitter voltage (V BE = 0)
V CEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current
IB Base current
P tot Total power dissipation at Tease"';; 25'C
T stg Storage temperature
T j Junction temperature
45V 60V BOV
45V 60V BOV
45V 60V BOV
5V
4A
7A
1A
40W
-65 to 150'C
150 'C
INTERNAL SCHEMATIC DIAGR:~:
MECHANICAL DATA
Dimensions in mm
Collector connected to tab.
TO-220
675
6/77

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance juntion-ambient
max
max
3.12 'C/W
70 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 'C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max.
Unit
ICBO Collector cutoff for 2N6121 VCB = 45 V
current (IE = 0) for 2N6122 VCB = 60 V
for 2N6123 VCB = 80 V
ICEX Collector cutoff for 2N6121 VCE = 45 V
current (VBE = -1.5V) for 2N6122 VCE = 60 V
for 2N6123 VCE = 80 V
Tease = 125 'C
for 2N6121 VCE = 45 V
for 2N6122 VCE = 60 V
for 2N6123 VCE = 80 V
ICEO Collector cutoff for 2N6121 VCE = 45 V
current (lB = 0) for 2N6122 VCE = 60 V
for 2N6123 VCE = 80 V
lEBO Emitter cutoff VEB = 5 V
current (Ic = 0)
V CEO (sus)* Collector-emitter Ic = 100 mA
sustaining voltage
for 2N6121
(lB = 0)
for 2N6122
for 2N6123
VCE (sat)* Collector-emitter Ic = 1.5A IB =0.15A
saturation voltage Ic =4A IB = 1A
VBE * Base-emitter voltage Ic = 1.5 A VCE = 2V
hFE * DC current gain Ic = 1.5 A VCE = 2 V
for 2N6121
for 2N6122
for 2N6123
Ic =4A VCE = 2 V
for 2N6121
for 2N6122
for 2N6123
hfe Small signal Ic = 1 A VCE = 4 V
current gain
f . = 1 MHz
100 [LA
100 [LA
100 [LA
100 [LA
100 [LA
100 [LA
2 mA
2 mA
2 mA
1 mA
1 mA
1 mA
1 mA
45 V
60 V
80 V
0.6 V
1.4 V
1.2 V
25 100 -
25 100 -
20 80 -
10 -
10 7 -
2.5 -
* Pulsed: pulse duration = 300 [Ls, duty cycle = 1 .5%
676

Safe operating areas
DC current gain
Ie
(AI
10
10~
Ie MAX PULSED
II II
U II
~ MAX CONTINUOUS
II I
Jll
PULSE OPERATION*
"
"
I~
De OPERATION +ttl ~\
*FOR SINGLE NON
REPETITIVE PULSE
10
2N6121-
2N6122-
2N6123
I
G -2520
lO,..s -
I
lms
s
10ms
-
10'
10
10-"
4 6.
10-1
-
,
I
VCE=2V
!
I\.
r\
G-lS1
I
4 6.
IC (AI
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(satl ,
(vI 6
,
./
"'-
hFE=10
/
V
1/
G-2442
veE(sat I
(VI
1.5
0.5
hFE=10
/
/'
./
-2515
I()"'
1()"'
, ,
6 ,
IC(AI
o
677

fT
(MHz)
10
Transition frequency
-
-....
VeE=lV
t\..
"' "-
\
G-2423
eeBO.
(pF) 6
10'
Collector-base capacitance
--
:--....
G-2425
,....
o
Ie (A)
10
'4 6 I 4 •• 4 6 •
10-1 1 10 VeB (V)
I
(ps)'
Saturated switching characteristics
Vee=30V
i IB1=-IB2
hFE=10
G -2422
Ptot
(W)
40
Power rating chart
.... ,.
f' r-r-.
r-...
..... Is
If
I'--.
" r-.... 1/
Ion
6 •
Ie (A)
30
20
10
"- I\. - _.
, ,,,-
r\.
50 100
'\
I,
678

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 6124, 2N 6125 and 2N 6126 are silicon epitaxial-base PNP power transistors in
Jedec TO-220 plastic package, intended for use in medium power linear and switching
applications.
The complementary NPN types are the 2N 6121, 2N 6122 and 2N 6123 respectively.
ABSOLUTE MAXIMUM RATINGS
Vcso Collector-base voltage (IE = 0)
V CES Collector-emitter voltage (VSE = 0)
VCEO Collector-emitter voltage (lB = 0)
V ESO Emitter-base voltage (lc = 0)
Ic Collector current
ICM Collector peak current
Is Base current
P tot Total power dissipation Tease';;; 25°C
T stg Storage temperature
T j Junction temperature
2N6124 2N6125 2N6126
-45V
-45V
-45V
-60V
-60V
-60V
-5V
-4A
-7A
-1 A
40W
-65 to 150°C
150°C
-80V
-80V
-80V
INTERNAL SCHEMATIC DIAGR~~:
MECHANICAL DATA
Dimensions in mm
COllector. connected to tab.
TO-220
679
6/77

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance juntion-ambient
max
max
3.12 °C/W
70 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
IcBO Collector cutoff for 2N6124 VCB = -45 V -100 [LA
current (IE = 0) for 2N6125 VCB = -60 V -100 [LA
for 2N6126 VCB = -80 V -100 [LA
ICEX Collector cutoff for 2N6124 VCE = -45 V -100 [LA
current (VBE = 1.5V) for 2N6125 VCE = -60 V -100 [LA
for 2N6126 VCE = -80 V -100 [LA
Tease = 125°C
for 2N6124 VCE = -45 V -2 mA
for 2N6125 VCE = -60 V -2 mA
for 2N6126 VCE = -80 V -2 mA
ICEO Collector cutoff for 2N6124 VCE = -45 V -1 mA
current (IB = 0) for 2N6125 VCE = -60 V -1 mA
for 2N6126 VCE = -80 V -1 mA
lEBO Emitter cutoff VEB = -5V -1 mA
current (lc = 0)
V CEO (sust Collector-emitter Ic = -100 mA
sustaining voltage for 2N6124 -45 V
(lB = 0) for 2N6125 -60 V
for 2N6126 -80 V
VCE (sat) * Collector-emitter Ic = -1.5A IB = -0.15A -0.6 V
saturation voltage Ic = -4 A IB = -1A -1.4 V
VBE * Base-emitter·voltage Ic = -1.5A VCE = -2 V -1.2 V
hFE * DC current gain Ic = -1.5A VCE = -2 V
for 2N6124 25 100 -
for 2N6125 25 100 -
for 2N6126 20 80 -
Ic = -4A VCE = -2 V
for 2N6124 10 -
for 2N6125 10 -
for 2N6126 7 -
hIe Small signal Ic = -1 A VCE = -4 V
current gain f = 1 MHz 2.5 -
* Pulsed: pulse duration = 300 [Ls, duty cycle 1.5%
680

Safe operating areas
DC current gain
-IC
(A)
10
II II
II It
II I
II I
IC MAX PULSED PULSE OPERATION *
IC MAX CONTINUOUS
"
"
~
DC OPERATION ++tt /"\
*FOR SINGLE NON
REPETITIVE PULSE
2N6124-f--
2N6125-f--
2N6126
10
G 2521
10!,s -
100"s
Ims
lOms
10'
-
10 ,
10-1
r--.
,
I
I
VCE=-lV
!
0-2517
"-
"' 1\
I
Ii
I
, 6 ,
-Ic (A)
Collector-emitter saturation voltage
G -2438
-VBE(sat )
Base-emitter saturation voltage
519
(V)
hFE=IO
10-1
./
./
hFE=IO
/" /
/
1.5
0.5
-
-
--
./
10-'
, ,
-IC(A)
o
-Ie (A)
681

Transition frequency
fT
(MHz)
Vr.=-IV
CCBQ
(pF),
Collector-base capacitance
•
15
10
:\..
:\..
:\..
10'
"'-
I"--
~
1"\
-Ie (A)
10
, 6 , , , ..
10 -VCB(V)
Saturated switching characteristics
Power rating chart
t
(,us)
,
6
,
2
V ee =-30V
181=-182
h Fe 'O
G-2419
Ptot
(W)
40
I'..
l\.
G_2518
,
6
,
2
f-
ts
........ .......
,..,. .......
:--.
"" t-. t-..!.!.
ton
30
20
10
1'\
I'\.
1\.
'\
1,\
6 , 6 ,
-Ie (A)
50 100
682

EPITAXIAL-BASE NPN/PNP
GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS
The 2N6282, 2N6283 and 2N6284 NPN types and the complementarYWPElS are mounted
in jedec TO-3 metal case, intended for use in general-purpose amplifier c!ndlow-frequency
switching applications. The complementary PNP types are 2N6285,21\i628() and 2N6287.
ABSOLUTE MAXIMUM RATINGS NPN 2N~82
* PNP> 2116285
Collector-base voltage (I E = 0)
Collector-emitter voltage (I B 7,9)
Emitter-base voltage (Ie = O),
Collector current
" ,'",........}.
Collector peak curren~ .••(~.,::;;Jalin~l .
Base current ..

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.9 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Test conditions
Min. Typ. Max. Unit
ICEO Collector cutoff for 2N6282/85 VCE = 30V
current (I B = 0) for 2N6283/86 VCE = 40V
for 2N6284/87 VCE = 50V
lEBO Emitter cutoff V BE = 5V
current (I C = 0)
ICEX Collector cutoff V CE = Rated V CBO
current (V BE = 1,5V) V CE = Rated V CBO
Tease = 150°C
V CEO (sus) Collector-emitter Ic = O.lA IB = 0
sustaining voltage for 2N6282/85
for 2N6283/86
for 2N6284/87
V CE(sat) * Collector-emitter Ic = lOA IB = 40mA
saturation voltage Ic = 20A IB = 200mA
V BE(sat) * Base-emitter Ic = 20A IB = 200mA
saturation voltage
VBE(On) * Base-emitter voltage Ic = lOA VCE = 3V
hFE * DC current gain Ic = lOA VCE = 3V
Ic = 20A VCE = 3V
CCBO Collector-base VCB = 10V IE = 0
capacitance
f=O.lMHz
for 2N6282/6283/6284
for 2N6285/6286/6287
hfe Small signal current Ic = lOA VCE = 3V
gain
f = 1 KHz
1 mA
1 mA
1 mA
2 mA
0.5 mA
5 mA
60 V
80 V
100 V
2 V
3 V
4 V
2.8 V
750 18000 -
100
400 pF
600 pF
300 -
* Pulsed: pulse duration = 300 fJ-S, duty cycle = 2%.
For PNP types voltage and current values are negative
684

MULTIEPITAXIAL PLANAR NPN
HIGH SPEED SWITCHING APPLICATIONS
The 2N 6354 is a silicon planar multiepitaxial NPN transistor in Jedec TO-3 metal case. It
is intended for use in high speed switching applications in military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (R SE = 500n)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipatioJl at Tease';;; 25°C
Storage temperature
Junction temperature
150
130
120
6.5
10
12
5
140
-65 to 200
200
v
V
V
V
A
A
A
W
°C
°C
INTERNAL SCHEMATIC DlAGR~~
MECHANICAL DATA
Dimensions in mm
685
10/82

THERMAL DATA
Rth j-case Thermal resistance junction-case max 1.25 ·C/W
ELECTRICAL CHARACTERISTICS (T case = 25 ·C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
Icso Collector cutoff Vcs= 150 V 5 mA
current (IE = 0)
ICES Collector cutoff VCE = 140 V 10 mA
current (V SE = 0) VCE = 140 V T case = 150·C 20 mA
ICEO Collector cutoff VCE = 100 V 20 mA
current (Is = 0)
IESO Emitter cutoff VES = 6.5 V 5 mA
current (lc = 0)
V CEO (SUS)* Collector-emitter Ic = 200 mA 120 V
sustaining voltage
(Is = 0)
V CER (sust Collector-emitter Ic = 200 mA 130 V
sustaining voltage
(RsE= 1000)
VCE(sat) * Collector-emitter Ic = 10A Is = 1 A 1 V
saturation voltage Ic =5A Is = 0.5 A 0.5 V
VSE (sat) * Base-emitter Ic = 10A Is ;", 1 A 2 V
saturation voltage Ic =5A Is = 0.5A 1.3 V
hFE * DC current gain Ic =5A VCE = 2 V 20 150 -
Ic = 10 A VCE = 2 V 10 100 -
, hIe Small signal Ic = 1 A VCE = 10 V
current gain f = 10 MHz 8 -
Ccso Collector-base IE = 0 Vcs= 10 V
capacitance f = 1 MHz 300 pF
t, Rise time Ic = 5A Vcc= 30 V
lSI = -ls2 = 0.5A 0.3 f1s
Ic = 10 A Vcc= 30 V
lSI = -ls2 = 1A 1 f1s
686

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
ts Storage time Ie = 5A Vee= 30 V
IB1 = -IB2 = 0.5A
t f Fall time Ie =5A Vee= 30 V
IB1 = -IB2 = 0.5A
IS/b ** Second breakdown VeE = 25 V
collector current
ES!b Second breakdown Ie = 5A VEB = 1 V
energy R SE = 5012 L = 25 flH
1 flS
0.2 flS
5.5 A
0.3 mJ
* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
** Pulsed: 1 s, non repetitive pulse
Safe operating areas
IC
(A)
10
r----"
IC M~X
II
ipJLJEbl
Ic MAX (CONTINUOUS)
1--- /'
./
~DC OPERATIONI/'
1--'
J J j
* FOR SINGLE NON
I REPETITIVE PULSE
*1 PUSIEI I I
OPERATIO~
,
\ \
, ,
G -2711
lOfll
1\ , 100ps-
I
\
\
ms£=
VCEO MAX=120V
III
10
10ml
I c-
i
I
687

1
150
100
50
DC current gain
I
I
,
,
Vce SV
'I '
I ! I' i ----VCE"
,11 '
2V I
.- ....:-:-,.,
~ '1
I
I
!
, I
, ,
,
.'\
\'\
"
G 4889
Collector-emitter saturation voltage
G 4890
VCE(sal )
,
"FE "to
.$
,
p;::: ~
12S'C
f-- -SS'C
,2S'C
r;rI
,
.,,'
10-1
10
2
10 Ic(A)
VCE(sat )
a
Collector-emitter saturation voltage
I
f';;
20A
,....
lSA
lOA
'!'.: SA I
2A
G 4891
Is(A)
VBE(sa
(V)
1.8
1.2
0.6
Base-emitter saturation voltage
_z'
G 70
I)
! ' !I! I :i'
I I :1, i I
I
I
T
I--
I
'I hFE",O
10
-+-
I
,
,
, 'I
tt
Ii
I
I
I
I
I
688

-~
--+
-
VBE(on
4.5
3.5
2.5
1.5
0.5
o
V BE(on) VS. collector current
)r--
r- i
VCE ~5v
,
'-~ I
,;
.- .-
- --
;~5:'C
-
125°C
II
, il
" !' ,
./ /.25·C
'I
10
G 1,892
•
(/.15)
10-'
Saturated switching characteristics
G _4.9,
f------ ~~->-
---
~~
r---- f-- --f-
I- -+:
--
~
-4.~
I
I
-f-
I
I
II
VCC~30V(
I r--r-.
I IJBI~-'B2
I
hFE·IO I
...
H-~
-+-
).
-~ r--- 'on
'--~--
'-~ ~
-----
-- -- ~. --
~--
I
I-- f--- f- +- - I I -t f-~
I
~-"- "- -- -f-
~ >~
~ -- ~
:--
/
~
~-
'0 'CIA)
CCBO
(pF)
Collector-base capacitance
G _4.9,
ft
(MHz)
Transition frequency
G -4895
10'
60
-'tE :15V "\.
.....
.....
.......... ...........
50
40
30
/
/'
/
20
10
to
10 10' VCS(V)
o
'CIA)
689

EPITAXIAL-BASE NPN
POWER DARLINGTON TRANSISTORS
The 2N 6386, 2N 6387 and 2N 6388 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intended for use in low and medium frequency power applications.
ABSOLUTE MAXIMUM RATINGS
V CBO Collector-base voltage (lB = 0)
V CEV Collector-emitter voltage (VBE = -1.5 V)
V CER Collector-emitter voltage (RBE~ 1000)
VCEO Collector-emitter voltage (lB = 0)
V EBO Emitter-base voltage (Ic = 0)
Ic Collector current .
ICM Collector peak current
IB Base current
P tot Total power dissipation at Tease ~ 25°C
T stg Storage temperature
T j Junction temperature
2N6386 2N6387 2N6388
40V 60V 80V
40V 60V 80V
40V 60V 80V
40V 60V 80V
5V 5V 5V
8A 10A 10A
15A
250mA
65W
-65 to 150°C
150 °C
MECHANICAL DATA
Dimensions in mm
6/77 690

THERMAL DATA
Rth j-ease Thermal resistance junction-case max 1.92 'C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 'c unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEV Collector cutoff VCE = 40 V for 2N6386 0.3 mA
current (V BE = -1.5 V) VCE = 60V for 2N6387 0.3 mA
VCE = 80 V for 2N6388 0.3 mA
Tease = 125'C
VCE = 40 V for 2N6386 3 mA
VCE = 60 V for 2N6387 3 mA
VCE = 80 V for 2N6388 3 mA
ICEO Collector cutoff VCE = 40 V for 2N6386 1 mA
current (IB = 0) VCE = 60 V for 2N6387 1 mA
VCE = 80 V for 2N6388 1 mA
lEBO Emitter-base VEB = 5V 5 mA
current (lc = 0)
V CEO (sus)* Collector-emitter Ic = 200 mA
sustaining voltage for 2N6386 40 V
(IB = 0) for 2N6387 60 V
for 2N6388 80 V
V CER (sust Collector-emitter Ic = 200 mA
sustaining voltage for 2N6386 40 V
(RBE = 100 £2) for 2N6387 60 V
for 2N6388 80 V
V CEV (sust Collector-emitter Ic = 200 mA
sustaining voltage for 2N6386 40 V
(VBE= -1.5V) for 2N6387 60 V
for 2N6388 80 V
V CE (sa\)* Collector-emitter for 2N6386
saturation voltage Ic = 3 A IB = 6 mA 2 V
for 2N6387 and 2N6388
Ic =5A IB = 10mA 2 V
for 2N6386
Ic =8A IB = 80mA 3 V
for 2N6387 and 2N6388
Ic = 10 A IB = 100mA 3 V
691

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
VBE * Base-emitter voltage for 2N6386
Ic =3A VCE = 3 V
for 2N6387and2N6388
Ic = 5A VCE = 3 V
for 2N6386
Ic = SA VCE = 3 V
for 2N6387 and2N6388
Ic = 10 A VCE = 3 V
hFE * DC current gain for 2N6386
Ic = 3A VCE = 3 V
fur2N6387and2N6388
Ic =5A VCE = 3 V
for 2N6386
Ic = 8A VCE = 3 V
for 2N6387 and 2N6388
Ic = 10 A VCE = 3 V
2.S V
2.S V
4.5 V
4.5 V
1000 20000 -
1000 20000 -
100 -
100 -
hIe Small signal Ic = 1 A
current gain VCE = 10 V f = 1 MHz
VCE = 10V f = 1kHz
V F * Paralled-diode for 2N6386
forward voltage IF = 8A
for 2N6387 and 2N6388
IF = 10 A
20 -
1000 -
4 V
4 V
CCBO Collector-base IE = 0 VCB = 10 V
capacitance f = 1 MHz
ISlb ** Second breakdown VCE = 25 V
collector current
ES/b Second breakdown L = 12 mH RBE = 100[2
energy VBE = -1.5V Ic = 4.5 A
200 pF
2.6 A
120 mJ
* Pulsed: pulse duration = 300 its, duty cycle = 1.5%
** Pulsed: 1 s non repetitive pulse
692

I
ri
EPITAXIAL-BASE NPN
I
I
POWER LINEAR AND SWITCHING APPLICATIONS
The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors
mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary PNP types are the 2N6489, 2N6490 and 2N6491 respectively.
ABSOLUTE MAXIMUM RATINGS
VCBO Collector-base voltage (IE = 0)
V CEX Collector-base voltage (VBE = 1.5V;
RBE = 100fl)
VCEO Collector-base voltage (IB = 0)
VEBO Emitter-base voltage (Ic = 0)
Ic Collector-current
IB Base-current
Ptot Total power dissipation at Tease ::::;25°C
Tamb ::::;25°C
Tstg Storage temperature
Junction temperature
Tj
2N6486 2N6487 2N6488
50V 70V 90V
50V 70V 90V
40V 60V 80V
5V
15A
5A
75W
1.8W
-65 to 150°C
150°C
INTERNAL SCHEMATIC DIAGR:~~r
MECHANICAL DATA
E
Dimensions in mm
Collector connected to tab.
3.85
.1.5
t max
~c:i 0.5
693
5/80

THERMAL DATA
Rth j-ease
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.67 °C/W
max 70 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEO Collector-cutoff for 2N6486 VCE = 20V 1 mA
current (Is = 0) for 2N6487 VCE = 30V 1 mA
for 2N6488 VCE = 40V 1 mA
ICEX Collector-cutoff for 2N6486 VCE = 45V 0 .. 5 mAo
current (VsE=-1.5V. for .2N 6487 VCE =65V 0.5 mA
RSE = 100n) for 2N6488 VCE = 85V 0.5 mA
Tease = 150°C
for 2N6486 VCE = 40V 5 mA
for 2N6487 VCE = 60V 5 mA
for 2N6488 VCE = 80V 5 mA
ICER Collector-cutoff for 2N6486 VCE = 35V 0.5 mA
cu rrent (RSE = 100n) for 2N6487 VCE = 55V 0.5 mA
for 2N6488 VCE = 75V 0.5 mA
IESO Emitter-cutoff VSE = 5V 1 mA
current (Ic = 0)
VCEO (sus)*Coliector-emitter Ic = 200mA
sustaining voltage for 2N6486 40 V
(Is = 0) for 2N6487 60 V
for 2N6488 80 V
VCER (sus)*Collector-emitter Ic = 200mA
sustaining voltage for 2N6486 45 V
(RSE = 100n) for 2N6487 65 V
for 2N6488 85 V
694

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
V CEX (sus)* Collector-em itter Ic = 200mA
sustaining voltage for 2N6486 50 V
(V BE = -1.5V; for 2N6487 70 V
RBE = 100D) for 2N6488 90 V
VCE (sat) * Collector-emitter Ic = 5A IB = 0.5A 1.3 V
saturation voltage Ic = 15A IB = 5A 3.5 V
VBE * Base-emitter Ic = 5A VCE = 4V 1.3 V
voltage Ic = 15A VCE = 4V 3.5 V
hFE * DC current gain Ic = 5A VCE = 4V 20 150 -
Ic = 15A VCE = 4V 5 -
hfe Small signal Ic = 1A VCE = 4V
current gain f = 1 MHz 5 -
Ic = 1A VCE = 4V
f = 1KHz 25 -
* Pulsed: pult'\e duration = 300ILS, duty cycle ~2%.
695

EPITAXIAL-BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
The 2N6489, 2N6490 and 2N6491 are silicon epitaxial-base PNP transistors
mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary NPN types are the 2N6486, 2N6487 and 2N6488 respectively.
ABSOLUTE MAXIMUM RATINGS
VCBO Collector-base voltage (IE = 0)
VCEX Collector-base voltage (VBE = 1.5V;
RBE = 100D)
VCEO Collector-base voltage (lB = 0)
VEBO Emitter-base voltage (Ic = 0)
Ic Collector-current
IB Base-cu rrent
P tot Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature
2N6489 2N6490 2N6491
-50 V -70V -90V
-50V -70V -90V
-40V -60V -80V
-5V
-15A
-5A
75W
1.8W
-65 to 150°C
150°C
INTERNAL SCHEMATIC D1AGR~~_~r
MECHANICAL DATA
E
Dimensions in mm
5/80 696

THERMAL DATA
Rth j-case
Rth j-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max 1.67 °C/W
max 70 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICED Collector-cutoff for 2N6489 VCE = -20V -1 mA
current (Is = 0) for 2N6490 VCE = -30V -1 mA
for 2N6491 VCE = -40V -1 mA
ICEX Collector-cutoff for 2N6489 VCE = -45V -0.5 mA
current (VSE = 1.5V for 2N6490 VCE = -65V -0.5 mA
RSE = 100D) for 2N6491 VCE = -85V -0.5 mA
Tease = 150°C
for 2N6489 VCE = -40V -5 mA
for 2N6490 VCE = -60V -5 mA
for 2N6491 VCE = -80V -5 mA
ICER Collector cutoff for 2N6489 VCE = -35V -0.5 mA
current(RSE = 1 OOD) for 2N6490 VCE = -55V -0.5 mA
for 2N6491 VCE = -75V -0.5 mA
IESO Em itter-cutoff VSE = -5V -1 mA
current
VCED (sus) *Collector-emitter Ic = -200m A
sustaining voltage for 2N6489 -40 V
(Is= 0) for 2N6490 -60 V
for 2N6491 -80 V
VCER (sus)*Collector-emitter Ic = -200m A
sustaining voltage for2N6489 -45 V
(RSE = 100D) for 2N6490 -65 V
for 2N6491 -85 V
697

ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit
VCEX (SUS)* Collector-emitter Ic = -200mA
sustaining voltage for 2N6489 -50 V
(VBE = 1.5V; for 2N6490 -70 V
RBE = 100D) for 2N6491 -90 V
VCE (sat) * Collector-emitter Ic = -5A; IB = -0.5A -1.3 V
saturation voltage Ic = -15A; IB = -5A -3.5 V
VBE * Base-emitter Ic = -5A VCE = -4V -1.3 V
voltage Ic = -15A VCE = -4V -3.5 V
hFE * DC current gain Ic = -5A VCE = -4V 20 150 -
Ic = -15A VCE = -4V 5 -
hie Small signal Ic = -1A VCE = -4V
emitter gain f = 1MHz 5 -
Ic = -1A VCE = -4V
f = 1KHz 25 -
* Pulsed: pulse duration = 300JLs, duty cycle ~2%.
698

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The 2N6544 and 2N6545 are multiepitaxial mesa NPN transistors in Jedec TO-3
metal case. They are intended for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS
2N6544
2N6545
VCES Collector-emitter voltage (VBE = 0)
V CEX (Clamped) Collector-emitter voltage (VBE = -5V)
VCEO Collector-emitter voltage (IB = 0)
VEBO Emitter-base voltage (Ic = 0)
Ic Collector current
ICM Collector peak current (tp = 10ms)
IB Base current
P tot Total power dissipation at Tease"'; 25°C
T stg Storage temperature
Tj Junction temperature
INTERNAL SCHEMATIC DIAGR:4 :
650V 850V
350V 450V
300V 400V
9V
8A
16A
8A
125W
-65 to 20QoC
200°C
MECHANICAL DATA
Dimensions in mm
Collector connected to case
699
5/80

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. 1.4 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for 2N6544 VCE = 650V 0.5 mA
current (VSE = 0) for2N6545 VCE = 850V 0.5 mA
Tease = 100°C
for 2N6544 VCE = 650V 2.5 mA
for2N6545 VCE = 850V 2.5 mA
ICER Collector cutoff Tease = 100 °C
current (RSE = 50fl) for2N6544 VCE = 650V 3 mA
for 2N6545 VCE = 850V 3 mA
IESO Emitter cutoff VES = 9V 1 mA
current (Ic = 0)
VCEO (sus) * Collector-emitter Ic = 100mA
sustaining voltage for 2N6544 300 V
(Is = 0) for 2N6545 400 V
VCEX(SUS) Collector-emitter Iclis = 5
sustaining voltage L = 180ILH
(clamped Es/b) VSE = -5V
Tease = 100°C
V clamp = rated V CEX (sus)
Ic = 4.5A
for 2N6544 350 V
for 2N6545 450 V
V clamp = rated V CEO (sus)-1 OOV
Ic = 8A
for 2N6544 200 V
for2N6545 300 V
Is/b Second breakdown t = 1 s (non repetitive) 0.2 A
collector current VCE = 100V
Es/b Second breakdown L = 40ILH 500 ILJ
energy V SE = -4V
RSE = 50fl
700

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
.
hFE DC current gain Ie = 2.5A VeE = 3V
Ie = 5A VeE = 3V
.
VeE (sat) Co Ileeto r-em itter Ie = 5A Is = 1A
saturation voltage Ie = 8A Is = 2A
Tease = 100 D C
Ie = 5A Is = 1A
.
VSE (sat) Base..emitter Ie = 5A Is = 1A
saturation voltage Tease = 100 D C
Ie = 5A Is = 1A
h Transition Ie = 0.3A VeE = 10V
frequency
f = 1MHz
CeEiO Collector-base Ves = 10V IE = 0
capacitance f = 1 MHz
ton Turn-on time RESISTIVE LOAD
ts
t f
Storage time
Fall time
Ie = 5A Ve =250V
IS1 = -ls2 = 1A
INDUCTIVE LOAD
ts Storage time Ie = 5A (pk)
IS1 = 1A VSE = -5V
L=180p.,H
Tease = 100 D C
t f Fall time for 2N6544 Vel amp =350V
for 2N6545 Velamp =450V
Min. Typ. Max. Unit
12 60 -
7 35 -
1.5 V
5 V
2.5 V
1.6 V
1.6 V
6 24 MHz
200 pF
1 p.,s
4 p.,s
1 p.,s
4 p.,s
0.9 p.,s
• Pulsed: pulse duration = 300p.,s, duty cycle = 1.5 %.
For characteristic curves see the BUW 35 type.
701

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE, HIGH CURRENT POWER SWITCH
The 2N6546 and 2N6547 are multiepitaxial mesa NPN transistors in Jedec TO-3
metal case, intended in fast switching applications for high output power.
ABSOLUTE MAXIMUM RATINGS
2N6546
2N6547
V CES
VCEX
VCEO
V ESO
Ic
ICM
Is
Ptot
Tstg
Tj
Collector-emitter voltage (VSE = 0)
(Clamped) Collector-emitter voltage (VSE = -5V)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~ 25°C
Storage temperature
Junction temperature
INTERNAL SCHEMATIC DIAGR:4 :
650V 850V
350V 450V
300V 400V
9V
15A
30A
10A
175W
-65 to 200°C
200°C
MECHANICAL DATA
Dimensions in mm
5/80 702

THERMAL DATA
Rth j-ease Thermal resistance junction-case max. °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICES Collector cutoff for 2N6546 VCE = 650V 1 mA
current (VSE = 0) for 2N6547 VCE = 850V 1 mA
Tease = 100°C
for 2N6546 VCE = 650V 4 mA
for 2N6547 VCE = 850V 4 mA
ICER Collector cutoff Tease = 100°C
current (RSE = 50n) for 2N6546 VCE = 650V 5 mA
for 2N6547 VCE = 850V 5 mA
IESO Emitter cutoff V ES = 9V 1 mA
current (Ic = 0)
V CEO (sus)·Collector-em itter Ic = 100mA
sustaining voltage for 2N6546 300 V
(Is = 0) for 2N6547 400 V
V CEX (sus)· Collector-emitter Ielis = 5
sustai n i ng voltage L = 180/-LH
(clamped ES/B) V SE = -5V
Tease = 100°C
Velamp = rated V CEX (sus)
Ic = 8A
for 2N6546 350 V
for 2N6547 450 V
V clamp = rated V CEO (8us)-100V
Ic = 15A
for 2N6546 200 V
for 2N6547 300 V
ISlb Second breakdown t = 1 s (non repetitive)
collector current VCE = 100V 0.2 A
Es/b Second breakdown L = 40/-LH 2 mJ
energy V SE = -4V
RSE = 50n
703

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test conditions
hFE * DC current gain Ie = 5A VeE = 2V
Ie = 10A VeE = 2V
VeE (sat)* Collector-emitter Ie = 10A Is = 2A
saturation voltage Ie = 15A Is = 3A
Tease = 100°C
Ie = 10A Is = 2A
VSE (sat)* Base-emitter Ie = 10A Is = 2A
saturation voltage Tease = 100°C
Ie = 10A Is = 2A
fT Transition Ie = 0.5A VeE = 10V
frequency
f = 1MHz
Ceso Collector-.base Ves = 10V IE = 0
capacitance f = 1MHz
ton Turn-on time RESISTIVE LOAD
ts
tf
Storage time
Fall time
Vee = 250V Ie = 10A
IS1 = -ls2 = 2A
INDUCTIVE LOAD
ts Storage time Ie = 10A (pk)
IS1 = 2A VSE = -5V
L = 180f,A-H
Tease = 100°C
tf Fall time for 2N6546 V clamp = 350V
for 2N6547 V clamp = 450V
Min. Typ. Max. Unit
12 60 -
6 30 -
1.5 V
5 V
2.5 V
1.6 V
1.6 V
6 24 MHz
360 pF
1 f,A-s
4 f,A-s
0.7 f,A-s
5 f,A-s
1.5 f,A-s
* Pulsed: pulse duration = 300f,A-s, duty cycle = 1.5%.
For characteristic curves see the BUW 45 type.
704

MULTIEPITAXIAL PLANAR NPN
SWITCHING AND GENERAL PURPOSE
The 2N6702 is a silicon multiepitaxial planar NPN transistor and is niounted in Jedec
TO--220 plastic package.
It is intended for various switching and general purpose applications; ".
ABSOLUTE MAXIMUM RATINGS
V CEV
V CEO
V EBO
Ic
ICM
IB
P tot
Tstg
T j
Collector-emitter voltage (VBE: =
Collector-emitter voltage (I B
Emitter-base voltate (Ic =
Collector current
Collector peak cur~~pt
Base current}'"
Total power diS~ipatlo~;h'"ase .;;; 25°C)
Storage~~~~fft~re '.
Ju nct\~t\l~pe:f'~~~re<
140 V
90 V
7 V
7 A
10 A
5 A
50 W
-65 to 150 °C
150 °C
MECHANICAL DATA
Dimensions in mm
Collector connected to·tab.
. 2~$ ..
- "
::r.': '.:
TO-220.
705
10/82

THERMAL DATA
Rth j-case Thermal resistance junction-case max. 2.5 °CIW
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
ICEV Collector cutoff VCE = 140V 100 JlA
current
VCE = 140V
(VSE =-1.5V) at Tease = 125°C 1 mA
IESO Emitter cutoff VES = 7V 100 JlA
current (I C = 0)
V CEo(susi Collector-emitter Ic = 100mA 90 V
sustaining voltage
(Is = 0)
V CE(sat) * Collector-emitter Ic =5A; Is = 0.5A 0.8 V
saturation voltage Ic = 7A; Is=0.7A 1.5 V
VSE(sat) * Base-emitter Ic =5A; Is = 0.5A 1.5 V
saturation voltage
hFE * DC current gain Ic = 0.2A; VCE = 2V 30 -
Ic = 5A; VCE = 2V 20 -
hie Small signal Ic = 0.5A; VCE = 10V 4 40 -
current gain
f = 5MHz
fT Transition frequency Ic = 0.5A; VCE = 10V 20 200 MHz
f = 5MHz
Ccso Collector base IE = 0; Vcs = 10V 50 150 pF
capacitance
f = 100KHz
IS/b Second breakdown VCE = 20V; t = 100 ms 2.5 A
td Delay time
t, Rise time
ts Storage time
t, Fall time
Ic =5A; lSi = 0.5A
Vcc = 70V
Ic = 5A; lSi = -ls2= 0.5A
Vce = 70V
0.1 Jls
0.25 Jls
1 JlS
0.5 Jls
* Pulsed: pulse duration = 300 Ilsec.; duty cycle < 2%.
706

DESIGN AND TECHNICAL NOTES APPLICABLE TO POWER DEVICES
DN300 -
HORIZONTAL DEFLECTION IN B/W TV SETS USING THE
SGS-ATES DARLINGTONS BU806/7
Horizontal deflection circuits for B/W receivers using the BU806 and BU807 darlingtons
rlriven by the TDA 1180. A short reliability report on the TO-220 plastic package is included.
DN306 - PARALLEL CONNECTION OF HIGH VOLTAGE TRANSI­
STORS
Connecting high-voltage transistors in parallel; obtaining good performance and reliable
operation.
DN307 -
AUDIO AMPLIFIERS
Audio amplifiers with output powers of 35W, 50W and 75W using complementary power
transistors. Full constructional details are provided.
DN308 - DRIVING CIRCUITS FOR SGS-ATES SWITCHING TRAN­
SISTORS
Driving circuits which optimize the switching efficiency of power stages. This consideration
is of particular importance when the duty cycle or switching frequency is variable.
DN323 - BUW34 AND BUW44 HIGH VOLTAGE TRANSISTOR AP-
PLICATIONS: 400W AND 600W SWITCH-MODE MAINS
ISOLATED SUPPLIES
The design of two switch-mode regulated supplies: 24V/400W and 24V/600W. Details
of the performance and construction are included.
DN328 - OPTIMUM BASE DRIVE VERSUS COLLECTOR CURRENT
WAVEFORM
Improving the switching behaviour of power devices for both triangular and trapezoidal
collector current waveforms.
DN335 -
REVERSE SECONDARY BREAKDOWN
A description of the phenomenon and power transistor ratings for both clamped and unclamped
ESIb stresses.
DN336 -
DIRECT SECONDARY BREAKDOWN
A description of the ISlb rating in power transistors and how to obtain reliable operation
in repetitive pu Ise conditions.
708

DN337 - COMPLEMENTARY PAIRS IN SWITCHING APPLICATIONS
The advantages of complementary transistors in circuit design. I ncludes an application
example: a 720W switch-mode converter in bridge configuration.
TN146 -
USING THE L200 ADJUSTABLE VOLTAGE AND CURRENT
REGULATOR
Description and applications of the L200, versatile variable regulator (2.85 to 36V, 2A max.)
TN150 -
40 INDUSTRIAL APPLICATION IDEAS
Industrial applications for linear integrated circuits and power transistors.
All these Design and Technical Notes can be obtained free of charge from the SGS-A TES
sales network.
709

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Information furnished is believed to be accurate and reliable. However, no responsibility is assumed for the consequences of its use nor for
any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of SGS-ATES. Specifications mentioned in this publication are subject to change without notice. This
publication supersedes and substitutes all information previously supplied.
SGS-ATES GROUP OF COMPANIES
Italy - France - Germany - Malta - Malaysia - Singapore - Sweden - United Kingdom - U.S.A.
© SGS-ATES Componenti Elettronici SpA. 1982 - Printed in Italy