QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD ...

TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE ON CURRENT
(mA)
DRAIN-SOURCE ON CURRENT
(µA)
5
4
3
2
1
0
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
-55°C
-25°C
0°C
70°C 125°C
VGS(TH)-1 VGS(TH) VGS(TH)+1 VGS(TH)+2 VGS(TH)+3 VGS(TH)+4
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
DRAIN-SOURCE ON CURRENT vs. ON RESISTANCE
100000
10000
1000
100
10
1
0.1
VDS =+10V T A = 25°C
VGS=-4.0V to +5.4V
V DS =+0.1V
0.01
0.1 1 10 100 1000
ON RESISTANCE (KΩ)
V DS =+5V
V DS =+1V
10000
DRAIN SOURCE ON CURRENT
( µA)
GATE SOURCE VOLTAGE (V)
100
50
V GS(TH) +4
V GS(TH) +3
V GS(TH) +2
V GS(TH) +1
V GS(TH)
V GS(TH) -1
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
Zero Temperature
Coefficient (ZTC)
125°C
- 25°C
0
V GS(TH) V GS(TH) V GS(TH) V GS(TH) V GS(TH) V GS(TH)
+0.0 +0.2 +0.4 +0.6 +0.8 +1.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
V GS
D
S
V DS
I DS(ON)
V DS = 0.5V
T A = +25°C
V DS = 0.5V
T A = +125°C
DRAIN SOURCE ON CURRENT (µA)
V DS = 5V
T A = +25°C
V DS = 5V V DS = R ON • I DS(ON)
T A = +125°C
0.1 1 10 100 1000 10000
DRAIN SOURCE ON CURRENT
(mA)
5
4
3
2
1
0
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
TA = 25°C
V DS = +10V
V DS = +5V
V DS = +1V
OFFSET VOLTAGE (mV)
4
3
2
1
0
-1
-2
-3
-4
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
REPRESENTATIVE UNITS
VGS(TH) V GS(TH) +1 VGS(TH)+2 V GS(TH) +3 VGS(TH)+4 VGS(TH)+5
-50 -25 0 25 50 75 100 125
OUTPUT VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
GATE LEAKAGE CURRENT (pA)
600
500
400
300
200
100
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
I GSS
0
-50 -25 0 25 50 75 100 125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
D V DS
0.1 1 10 100 1000 10000
ALD110814/ALD110914 Advanced Linear Devices 6 of 11
GATE SOURCE VOLTAGE (V)
V GS(TH) +4
V GS(TH) +3
V GS(TH) +2
V GS(TH) +1
V GS(TH)
+25°C
+125°C
V GS
ON - RESISTANCE (KΩ)
I DS(ON)
S
0.0V ≤ V DS ≤ 5.0V