QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD ...

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ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, V DS 10.6V Gate-Source voltage, V GS 10.6V Power dissipation 500 mW Operating temperature range SCL, PCL, SAL, PAL package 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V V- = GND TA = 25°C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ALD110814 / ALD110914 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage VGS(th) 1.38 1.40 1.42 V IDS =1µA, VDS = 0.1V Offset Voltage VGS(th)1-VGS(th)2 VOS 3 10 mV IDS =1µA Offset VoltageTempco TC ∆VOS 5 µV/ °C VDS1 = VDS2 GateThreshold Voltage Tempco TC∆VGS(th) -1.7 mV °C ID = 1µA, VDS = 0.1V 0.0 ID = 20µA, VDS = 0.1V +1.6 ID = 40µA, VDS = 0.1V On Drain Current IDS (ON) 12.0 mA VGS = +10.6V, VDS = + 5V 3.0 VGS = + 5.4V, VDS = + 5V Forward Transconductance GFS 1.4 mmho VGS = +5.4V VDS = +10.4V Transconductance Mismatch ∆GFS 1.8 % VGS = + 5.4V Output Conductance GOS 68 µmho VDS = +10.4V Drain Source On Resistance RDS (ON) 500 Ω VDS = 0.1V VGS = +5.6V Drain Source On Resistance ∆RDS (ON) 0.5 % Mismatch Drain Source Breakdown Voltage BVDSX 10 V IDS = 1.0µA VGS = +0.4V Drain Source Leakage Current1 IDS (OFF) 10 400 pA VGS = +0.4V 4 nA VDS =5V, TA = 125°C Gate Leakage Current1 IGSS 3 200 pA VDS = 0V, VGS = 5V 1 nA TA =125°C Input Capacitance CISS 2.5 pF Transfer Reverse Capacitance CRSS 0.1 pF Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ Crosstalk 60 dB f = 100KHz Notes: 1 Consists of junction leakage currents ALD110814/ALD110914 Advanced Linear Devices 2 of 11
PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) technology provides the industry’s only family of matched transistors with a range of precision threshold values. All members of this family are designed and actively programmed for exceptional matching of device electrical characteristics. Threshold values range from - 3.50V Depletion to +3.50V Enhancement devices, including standard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V, +0.40V, +0.80V, +1.40V, and +3.30V. ALD can also provide any customer desired value between -3.50V and +3.50V. For all these devices, even the depletion and zero threshold transistors, ALD EPAD technology enables the same well controlled turn-off, subthreshold, and low leakage characteristics as standard enhancement mode MOSFETs. With the design and active programming, even units from different batches and different date of manufacture have well matched characteristics. As these devices are on the same monolithic chip, they also exhibit excellent tempco tracking. This EPAD MOSFET Array product family (EPAD MOSFET) is available in the three separate categories, each providing a distinctly different set of electrical specifications and characteristics. The first category is the ALD110800/ALD110900 Zero-Threshold mode EPAD MOSFETs. The second category is the ALD1108xx/ ALD1109xx enhancement mode EPAD MOSFETs. The third category is the ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1 V steps, for example, xx=08 denotes 0.80V). The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in which the individual threshold voltage of each MOSFET is fixed at zero. The threshold voltage is defined as I DS = 1uA @ V DS = 0.1V when the gate voltage V GS = 0.00V. Zero threshold devices operate in the enhancement region when operated above threshold voltage and current level (V GS > 0.00V and I DS > 1uA) and subthreshold region when operated at or below threshold voltage and current level (V GS = V GS - V GS(th) , the saturation current I DS is now given by (approx.): I DS = u . C OX . W/L . [V GS - V GS(th) ]2 ALD110814/ALD110914 Advanced Linear Devices 3 of 11
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QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD ...

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