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Scientific Report 2007-2009<br />
Condensed matter physics and biophysics<br />
C35. High-pressure optical spectroscopy on strongly electron<br />
correlated systems: the Metal Insulator transition<br />
A deep understanding of the physics of strongly correlated<br />
systems still represents one of the most challenging<br />
tasks of condensed-matter research. Generlly speaking,<br />
these systems show a variety extremely interesting physical<br />
behaviors (e.g. high temperature superconductivity<br />
or colossal magnetoresistance) and a high sensitivity<br />
of their properties to external parameters which makes<br />
them highly appealing for a wide range of technological<br />
applications. The latter characteristic is ascribed to<br />
the rather small extension of the electron bandwidth in<br />
comparison with other relevant energy scales as the electron<br />
correlation U or the charge-transfer (CT) energy<br />
gap. Under these conditions the independent electron<br />
approximation breaks down and, for example, materials<br />
at half filling can be insulators despite the opposite prediction<br />
of band theory. Materials at half-filling can become<br />
insulating also in the presence of electronphonon<br />
coupling triggered by spontaneous symmetry breaking<br />
such as Peierls and Jahn-Teller lattice distortions as in<br />
the cases of mixed-valence manganites and vanadium<br />
dioxide.<br />
Vanadium oxides have attracted a considerable interest<br />
because of the abrupt and often huge change of conductivity<br />
at the MIT. In particular, we carried out Infrared<br />
and Raman measurements on HP VO 2 with the<br />
aim of clarifying the microscopic mechanisms at the origin<br />
of the spectacular temperature-driven MIT which<br />
involves a jump of five order of magnitude in conductivity<br />
and a simultaneous structural transition from a<br />
monoclinic (M1) insulating to rutile (R) metallic phase<br />
for T > 341 K. HP experiments show that the MIT is<br />
basically due to electron correlation and that, above 10<br />
GPa, the onset of a metallization process accompanied<br />
by a sluggish structural transition to a new monoclinic<br />
Peierls distorted phase are apparent.<br />
Gasket<br />
Force<br />
Ruby<br />
Sample<br />
Figure 2: Left: Pressure dependence of the spectral weight<br />
of VO 2 ; a metallization proces is observed for P>10 GPa [1]<br />
. Right: spectral weight vs. lattice constant for NiS 2−x Se x .<br />
A metallization process is observed either expanding (Se alloying)<br />
or compressing (Pressure) the NiS 2 lattice [4].<br />
Figure 1: phase diagram of the vanadium oxides investigated<br />
The Metal Insulator Transition (MIT) is thus one of<br />
the most important phenomena to be investigated in<br />
these systems. To this purpose infrared and Raman spectroscopy<br />
are the ideal tools since the former monitors<br />
the charge delocalization proces, and the latter provides<br />
information on the relevant lattice dynamic. Moreover<br />
both the techniques can be efficiently coupled with diamond<br />
anvil cells to carry out high pressure (HP) experiments<br />
which can be indeed very effective in shedding<br />
light on the complex physics lying behind the peculiar<br />
properties shown by these systems. Progressive and controlled<br />
lattice compression, indeed, tunes the strength of<br />
the interactions, simultaneously at work in these systems,<br />
at different extent. It becomes therefore possible<br />
to disentangle the interactions and, in some cases, to enhance<br />
the coupling mechanisms relevant to the physics<br />
of the system which are otherwise weak at ambient pressure.<br />
The research activity of our group in this field<br />
has focused in the last years on different vanadium oxides<br />
(V 3 O 5 ,V 2 O 3 , VO 2 [1,2,3]) belonging to the Magneli<br />
phase and Ni pyrite compounds belonging to the<br />
NiS 2−x Se x family [4].<br />
Force<br />
The cubic pyrite NiS2, is a CT insulator and is<br />
considered, together with vanadium sesquioxide V 2 O 3 ,<br />
a textbook example of strongly correlated materials.<br />
NiS 2 easily forms a solid solution (NiS 2−x Se x ), with<br />
NiSe 2 , which, while being isoelectronic and isostructural<br />
to NiS 2 is nevertheless a good metal. A MIT is thus<br />
observed at room temperature for x > 0.6 as well as<br />
in pure NiS 2 on applying hydrostatic pressure above<br />
P=4 GPa. We find that optical results are not compatible<br />
with the previously claimed equivalence between<br />
Se-alloying and pressure pointing out the different<br />
microscopic origin of the MIT.<br />
References<br />
1. E. Arcangeletti et al., Phys. Rev. Lett. 98, 196406<br />
(2007).<br />
2. L. Baldassarre et al., Phys. Rev. B 75, 24510 (2007).<br />
3. L. Baldassarre et al., Phys. Rev. B 77, 113107 (2008).<br />
4. A. Perucchi et al., Phys. Rev. B 80, 073101 (2009).<br />
Authors<br />
P. Postorino, P. Dore, S. Lupi, E. Arcangeletti, L. Baldassarre,<br />
D. Di Castro, C. Marini, M. Valentini<br />
http://www.phys.uniroma1.it/gr/HPS/HPS.htm<br />
<strong>Sapienza</strong> Università di Roma 88 Dipartimento di Fisica