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Putting SSDs to the Test - A Case Study - Micron

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P5Q Serial PCM Innovates System Designs for Smart Grid Products<br />

Requirement Existing Solution P5Q P5Q Benefit<br />

Cost Effectiveness<br />

System Complexity<br />

Bit Alterable<br />

Write Cycling<br />

Write Speed<br />

(for 256 bytes)<br />

Three components:<br />

• Serial NOR<br />

• EEPROM<br />

• NVRAM<br />

Backup Power:<br />

• Large capaci<strong>to</strong>r<br />

3 SPI required;<br />

10 MHz MAX CLK support<br />

NOR – No (erase first)<br />

EEPROM – Yes<br />

NVRAM – Yes<br />

NOR: 100K<br />

EEPROM: 1 million<br />

NVRAM: >1 million<br />

NOR: 0.5-1s (write +<br />

erase required)<br />

EEPROM: 1–5ms<br />

NVRAM: ~0.1ms<br />

Table 1: Comparison of Existing Solution vs. New PCM Solution<br />

Information<br />

Inside<br />

Requirement<br />

Memory<br />

ICs<br />

MCU/CPU<br />

Single component:<br />

128Mb P5Q<br />

Backup Power:<br />

Small capaci<strong>to</strong>r<br />

1 SPI interface required;<br />

66 MHz MAX<br />

SPI<br />

Interface<br />

P5Q Serial<br />

PCM<br />

Power Consumption<br />

Curve Monthly Event Log<br />

Calibration Paramenter<br />

Memory System<br />

Cost-effective<br />

solution with BOM<br />

consolidation<br />

Simplified system design<br />

Yes Easier data manipulation<br />

1 million High endurance<br />

0.2ms<br />

Cost-Effective, High-Density Solution<br />

Bit Alterable<br />

Write Endurance<br />

Write Speed<br />

Figure 3: Smart Grid Memory System with PCM<br />

High write performance,<br />

smaller capaci<strong>to</strong>r

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