29.03.2015 Views

Double Data Rate SDRam MODULE - 3D Plus

Double Data Rate SDRam MODULE - 3D Plus

Double Data Rate SDRam MODULE - 3D Plus

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

MEMORY <strong>MODULE</strong><br />

DDR <strong>SDRam</strong> 64Mx16-SOP<br />

<strong>Double</strong> <strong>Data</strong> <strong>Rate</strong> <strong>SDRam</strong><br />

<strong>MODULE</strong><br />

<strong>3D</strong> 1D1G16TS1267<br />

1Gbit DDR <strong>SDRam</strong> organized as 64Mx16<br />

Pin Assignment (Top View)<br />

SOP 66 (Pitch : 0.65 mm)<br />

Features<br />

One 1Gbit DDR <strong>SDRam</strong><br />

Organized as 64Mx16bit<br />

Power supply: V DD=2.5 ± 0.2V, V DDQ=2.5±0.2V<br />

<strong>Double</strong>-data-rate architecture; two data transfers per<br />

clock cycle<br />

Bi-directional data strobe<br />

Differential Clock input (CK and #CK)<br />

DLL aligns DQ and DQS transition with CK transition<br />

Programmable Read latency 2, 2.5 (clock)<br />

Programmable Burst length (2, 4, 8)<br />

Programmable Burst Type (sequential and interleave)<br />

Edge aligned data output, center aligned data input<br />

LDM, UDM for write masking only<br />

Auto and self refresh<br />

7.8 us refresh interval (8K/64ms refresh)<br />

Available temperature range :<br />

0°C to +70°C<br />

-40°C to +85°C<br />

Available with screening option for high reliability<br />

application (Space, etc …)<br />

1 V DD 23 #RAS 45 CK<br />

2 DQ0 24 #CS 46 #CK<br />

3 V DDQ 25 NC 47 UDM<br />

4 DQ1 26 BA0 48 V SS<br />

5 DQ2 27 BA1 49 V REF<br />

6 V SSQ 28 AP/A10 50 DNU<br />

7 DQ3 29 A0 51 UDQS<br />

8 DQ4 30 A1 52 V SSQ<br />

9 V DDQ 31 A2 53 NC<br />

10 DQ5 32 A3 54 DQ8<br />

11 DQ6 33 V DD 55 V DDQ<br />

12 V SSQ 34 V SS 56 DQ9<br />

13 DQ7 35 A4 57 DQ10<br />

14 NC 36 A5 58 V SSQ<br />

15 V DDQ 37 A6 59 DQ11<br />

16 LDQS 38 A7 60 DQ12<br />

17 A13 39 A8 61 V DDQ<br />

18 V DD 40 A9 62 DQ13<br />

19 DNU 41 A11 63 DQ14<br />

20 LDM 42 A12 64 V SSQ<br />

21 #WE 43 NC 65 DQ15<br />

22 #CAS 44 CKE 66 V SS<br />

General description<br />

FUNCTIONAL Block Diagram<br />

The <strong>3D</strong>-<strong>Plus</strong> <strong>3D</strong> 1D1G16TS1267 is a high-speed highly<br />

integrated DDR Synchronous Dynamic RAM containing<br />

1,073,741,824 bits.<br />

It is organized with one bank of 16bit with #CS, CKE, CK<br />

and #CK.<br />

64Mx16<br />

It is particularly well suited for use in high reliability, high<br />

performance and high density system applications, such as<br />

solid state mass recorder, server or workstation.<br />

The <strong>3D</strong> 1D1G16TS1267 is packaged in a 66 pin SOP.<br />

DDR Memory Module<br />

Preliminary / MMDD16064601STC<br />

<strong>3D</strong> <strong>Plus</strong> SA reserves the right to cancel product or specifications without notice<br />

<strong>3D</strong>FP-0267-RV 2-DEC 2008


MEMORY <strong>MODULE</strong><br />

DDR <strong>SDRam</strong> 64Mx16-SOP<br />

<strong>Double</strong> <strong>Data</strong> <strong>Rate</strong> <strong>SDRam</strong><br />

<strong>MODULE</strong><br />

<strong>3D</strong> 1D1G16TS1267<br />

1Gbit DDR <strong>SDRam</strong> organized as 64Mx16<br />

Min<br />

Max<br />

A - 4.05<br />

A2 - 2.80<br />

D 23.80 24.20<br />

E 13.40 13.80<br />

E1 10.85 11.05<br />

b 0.30<br />

e 0.65<br />

Dimension (mm)<br />

Max. weight : 2.4 gr.<br />

Test Tools<br />

<strong>3D</strong> 1D1G16TS1267 ENPLASOTS-_________ Modified by <strong>3D</strong> PLUS<br />

DC OPERATING CONDITIONS<br />

Parameter Symbol Min Max Unit<br />

Supply Voltage V DD<br />

2.5 2.7 V<br />

I/O Supply Voltage V DDQ<br />

2.5 2.7 V<br />

I/O Reference Voltage V REF<br />

0.49xV DDQ 0.51x V DDQ V<br />

I/O Termination<br />

V TT<br />

V REF –0.04 V REF +0.04 V<br />

Voltage (syst.)<br />

Input High Voltage V IH (DC) V REF +0.15 V REF +0.3 V<br />

Input . Low Voltage V IL (DC) -0.3 V REF -0.15 V<br />

Note :<br />

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS"<br />

are exceeded.<br />

Functional operation should be restricted to recommended operating condition.<br />

Exposure to higher than recommended voltage for extended periods of time<br />

could affect device reliability<br />

ABSOLUTE MAXIMUM RATINGS<br />

Parameter Symbol Value Unit<br />

Voltage on any pin relative to V SS V IN , V OUT<br />

-0.5 ~ +3.6 V<br />

Storage temperature T STG<br />

-55 ~ +150 °C<br />

Power dissipation P D<br />

1 W<br />

Short circuit current I OS<br />

50 mA<br />

DC Characteristics @ 133MHz<br />

Parameter Symbol Value Unit<br />

Operating Current (one bank active) I DD1<br />

195 mA<br />

Precharge Power Down Standby Current I DD2P<br />

10 mA<br />

Precharge Floating Standby Current I DD2F<br />

60 mA<br />

<strong>3D</strong> 1D1G16TS1267 X X<br />

Temperature Range<br />

C = 0°C ~ +70°C<br />

I = -40°C ~ +85°C<br />

M = -55°C ~ +125°C<br />

S = Specific<br />

Quality Level<br />

N = Commercial Grade<br />

B = Industrial Grade<br />

S = Space Grade<br />

C = Custom<br />

Main Sales Office<br />

FRANCE<br />

<strong>3D</strong> PLUS<br />

408, rue Hélène Boucher ZI.<br />

78532 BUC Cedex<br />

Tel : 33 (0)1 30 83 26 50 Fax : 33 (0)1 39 56 25 89<br />

Web : www.3d-plus.com<br />

e-mail : sales@3d-plus.com<br />

DISTRIBUTOR<br />

USA<br />

<strong>3D</strong> PLUS USA, Inc<br />

6633 Eldorado Parkway<br />

Suite 420<br />

Mckinney, TX 75070<br />

DDR Memory Module<br />

Preliminary / MMDD16064601STC<br />

Tel : (241) 733-8505 Tel : (241) 733-8506 e-mail : sales@3d-plus.com<br />

<strong>3D</strong> <strong>Plus</strong> SA reserves the right to cancel product or specifications without notice<br />

<strong>3D</strong>FP-0267-RV 2-DEC 2008

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!