Yoshio NISHI - Fondation Nanosciences

Biography of Yoshio NISHI
Yoshio Nishi received BS in material science and PhD in electronics engineering from
Waseda University and University of Tokyo, respectively. He joined Toshiba R&D Center
where he studied silicon process technology and MOS device physics, resulting in a variety
of achievements including discovery of Si-SiO2 interface paramagnetic PB center, the
structural origin of interface states.
Later he led the development of the world first 1Mbit CMOSDRAM, 16bit SOS
microprocessor. He joined Hewlett-Packard Laboratories in 1986 as director of silicon
process laboratory for high performance CMOS R&D, followed by joinning Texas Instruments
as senior vice president and director of R&D in 1995. Since 2002 he has been professor of
electrical engineering, Stanford University, where he serves as director of research for Center
for Integrated Systems, director, Stanford Site of National Nanotechnology Infrastructure
Network.
His research activities cover resistive switching nonvolatile memory, high performance
alternative material channel MOSFETs, Ge and Si optical transmitter and graphene research.
He published more than 250 papers and conference presentations and hold more than 50
patents in Japan and US. He is IEEE Fellow, and recipients of 1995 IEEE Jack Morton
Award, 2002 IEEE Robert Noyce Medal, 2007 Technology Management award, 2008 SEMI
Lifetime achievements award.
Yoshio NISHI
Email: nishiy@stanford.edu