Focused ion beam technology, capabilities and ... - FEI Company

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Figure 49: SE image made with ion beam of
catalyst covered ceramic balls. The use of FIB
allows any individual particle to be selected
and analyzed for industrial quality control. In
this case the FIB has machined a TEM sample
of the top surface. Time to result: 60 minutes.
FIB systems deliver a single instrumental solution to enhance the speed and quality of the IC production process. The capability to perform
design edits to the fabricated circuit ensures that the design and debug phase is limited to one mask step, and that extensive and expensive
iteration steps can be avoided. The process control and failure analysis capabilities offered by FIB also provide the fastest possible route-cause
data to shorten yield improvement cycles and solve site specific failure modes, either in the production process or on customer returns.
On-Chip
Circuit Editing
Precision focused ion beam
(FIB) milling and deposition
enable the editing of existing
circuits to shortcut the
debug and test cycle.
Advanced FIB techniques
facilitate the editing of deep
sub-micron technologies,
planarized devices and flip
chip packaged parts. FIB circuit
changes are done by
opening circuit nodes from
the top, then connecting
these nodes together by
depositing metal over the
top insulator into these new
vias, and finally cutting
unwanted tracks.
FIB
Via Milling
Circuit nodes are accessed
from the top using precision
FIB milling.
1
2
3
4
Milling new
vias to four
select circuit
nodes
Figure 50: Secondary electron image made
with the ion beam of a cross-section into a
sintered magnet. Note that imaging with
the ion beam and the milling process are
unaffected by highly magnetic material
because the sensitivity to magnetic fields is
low (lower than for electrons).
The cutting edge for semiconductor laboratory applications
FIB Metal
Deposition
New connections are
added using FIB
deposition (1), and the
original path of the
circuitry is cut (2).
The new circuit design
is now ready
for testing/debug.
1 - Tungsten
deposition strap
2 - Isolation cut
Track
Crossing
Multiple layer circuit edits
can be performed by using
FIB deposited insulator
deposition
Exclusive CoppeRx process
for milling of copper parts
With CoppeRx
Without CoppeRx
Figure 51: The steel sample has been crosssectioned
both longitudinally and transversely
by the ion beam at the same location,
showing elongated grains on the left and
truncated grains on the right. Ion beam
channeling contrast of grain sizes is possible
down to the 50 nm scale.
GDSII Navigation
Overlay your design and
make changes realtime
with CAD overlay
FIB permits direct signal
probing for electrical or
Electron Beam testing even
on signals covered by
toplayer metal