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Focused ion beam technology, capabilities and ... - FEI Company

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10<br />

Deposit<strong>ion</strong><br />

As FIB <strong>technology</strong> is frequently used for milling an<br />

addit<strong>ion</strong>al technique can convert the <strong>ion</strong> <strong>beam</strong> system<br />

into a deposit<strong>ion</strong> system allowing the addit<strong>ion</strong> of material<br />

instead of removing material. This is realized by<br />

adding a so-called gas delivery system, that locally<br />

supplies a chemical compound close to the surface<br />

impact point. The chemical gas compound often<br />

consists of a organic-metallic molecule such as methyl<br />

cyclo pentadienyl Pt (IV) tri methyl. When this compound<br />

is exposed to the <strong>ion</strong> <strong>beam</strong> it will decompose<br />

locally <strong>and</strong> deposit Pt onto the surface. In general the<br />

cracking of the molecule is not 100% so there are<br />

always some addit<strong>ion</strong>al matrix molecules such as organic<br />

residues that are also deposited. The purity of the<br />

deposit is therefore generally lower compared to, for<br />

example, CVD deposits. The main advantage in comparison<br />

to CVD or PVD is the highly local deposit<strong>ion</strong>,<br />

<strong>and</strong> the capability to create different heights of the<br />

deposit in one exposure. In addit<strong>ion</strong> the direct deposit<strong>ion</strong><br />

capability is flexible <strong>and</strong> does not require complex<br />

mask structures.<br />

Molecules are absorbed on the irradiated area, <strong>and</strong> by<br />

using the patterning capability of the system three<br />

dimens<strong>ion</strong>al structures can be grown at selected posit<strong>ion</strong>s,<br />

with full control of size, posit<strong>ion</strong> <strong>and</strong> height.<br />

So this capability is a very welcome addendum to the<br />

FIB’s milling power. The material deposited depends on<br />

the gas chemistry used <strong>and</strong> various opt<strong>ion</strong>s are possible.<br />

Readily available gas chemistry allows the deposit<strong>ion</strong> of<br />

Pt, W, SiO2, C.<br />

Figure 17: Light microscope image of the sample deposited ex-situ<br />

on a TEM grid. Ex-situ foil extract<strong>ion</strong> using electro-static probes<br />

works even for materials with low structural integrity.<br />

Important characteristics for the deposit<strong>ion</strong>s are the<br />

minimum size (typically around 50 nm), the purity of<br />

the material, <strong>and</strong> its conductivity which is usually lower<br />

than the pure metal.<br />

Creat<strong>ion</strong> of TEM lamella<br />

An important capability, derived from the system’s<br />

milling capacity, is the creat<strong>ion</strong> of thin lamella that are<br />

transparent to an electron <strong>beam</strong> <strong>and</strong> hence can serve as<br />

a TEM sample. As the posit<strong>ion</strong> of the <strong>ion</strong> <strong>beam</strong> can be<br />

controlled to a high degree, the TEM lamella can be<br />

created at any locat<strong>ion</strong> that is of interest to the user.<br />

<strong>Focused</strong> <strong>ion</strong> <strong>beam</strong> machining for the creat<strong>ion</strong> of TEM<br />

samples is now firmly established as the most versatile<br />

<strong>and</strong> accurate method currently available. There are<br />

several ways to extract the FIB machined foil from the<br />

bulk sample without having to use mechanical preparat<strong>ion</strong><br />

at all, so for the first time it is not necessary to<br />

sacrifice the sample when performing TEM analysis<br />

with the highest accuracy.<br />

Site specific<br />

The fact that the locat<strong>ion</strong> of the foil site can be defined<br />

inside the FIB makes this the only true site-specific<br />

technique available. The momentary feed-back of what<br />

<strong>and</strong> where FIB milling takes place is essential to<br />

generate the best samples from the reg<strong>ion</strong> of interest.<br />

Lateral placement of foils is quite simple, <strong>and</strong> the aimed<br />

thickness is in the range of 100 nm <strong>and</strong> can be controlled<br />

to a high degree.<br />

Material independent<br />

As the <strong>ion</strong> <strong>beam</strong> removes atoms from the sample in an<br />

atomic collis<strong>ion</strong> process rather than with a mechanical<br />

bulk cut or mechanical polish, the amount of <strong>ion</strong>s<br />

needed to remove different materials with varying hardness<br />

is not related to the structure or the composit<strong>ion</strong><br />

of the sample. This means that milling any material or<br />

a combinat<strong>ion</strong> of materials is as straightforward as a<br />

simple single crystal sample for <strong>ion</strong> <strong>beam</strong> machining.<br />

Even voided, brittle or soft/hard combinat<strong>ion</strong>s of materials<br />

are easy for the FIB process. Many TEM samples<br />

that were difficult or impossible to make until now (soft<br />

polymer coating on metal, hard metal on soft metal)<br />

are now easy to make using FIB <strong>technology</strong>.

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