A Shift in Data Storage Todd Dinkelman Micron Technology, Inc.
A Shift in Data Storage Todd Dinkelman Micron Technology, Inc.
A Shift in Data Storage Todd Dinkelman Micron Technology, Inc.
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Reliability<br />
Endurance<br />
NAND Reliability and Endurance<br />
Effect<br />
Program<br />
Disturb<br />
Read<br />
Disturb<br />
<strong>Data</strong><br />
Retention<br />
Endurance/<br />
Cycl<strong>in</strong>g<br />
Description<br />
Cells not be<strong>in</strong>g<br />
programmed<br />
receive charge<br />
via elevated<br />
voltage stress<br />
Cells not be<strong>in</strong>g<br />
read receive<br />
charge via<br />
elevated voltage<br />
stress<br />
Charge loss over<br />
time<br />
Cycles cause<br />
charge trapped <strong>in</strong><br />
dielectric<br />
Observed As<br />
<strong>Inc</strong>reased read<br />
errors immediately<br />
after programm<strong>in</strong>g<br />
<strong>Inc</strong>reased read<br />
error at high<br />
number of reads<br />
<strong>Inc</strong>reased read<br />
errors with time<br />
Failed<br />
program/erase<br />
status<br />
Management<br />
ECC and Block<br />
Management<br />
ECC and Block<br />
Management<br />
ECC and Block<br />
Management<br />
Retire Block<br />
Santa Clara, CA USA<br />
August 2008 12
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