Proceedings of Topical Meeting on Optoinformatics (pdf-format, 1.21 ...
Proceedings of Topical Meeting on Optoinformatics (pdf-format, 1.21 ... Proceedings of Topical Meeting on Optoinformatics (pdf-format, 1.21 ...
50 OPTOINFORMATICS’05 LIGHT EMISSION BY THE NANOMETER-SCALE STRUCTURES T.A.Kudykina, A.I.Pervak University “Ukraina”, Department
SAINT-PETERSBURG, October 17 – 20, 2005 51 Fig.1. Dimension dependences
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50 OPTOINFORMATICS’05<br />
LIGHT EMISSION BY THE NANOMETER-SCALE STRUCTURES<br />
T.A.Kudykina, A.I.Pervak<br />
University “Ukraina”, Department <str<strong>on</strong>g>of</str<strong>on</strong>g> Engineering Technologies,<br />
vul. Horiva, 1 Γ , Kiev-71, Ukraine, 04071<br />
E-mail: tkudykina@ukr.net<br />
It is shown that the nanometer-scale structures (quantum wells, dots, porous<br />
silic<strong>on</strong>, thin films) are the oscillatory systems with the natural frequencies in<br />
the spectral regi<strong>on</strong> from ultraviolet to infrared.<br />
The visible luminescence <str<strong>on</strong>g>of</str<strong>on</strong>g> the nanometer-scale objects and the radiowave<br />
generati<strong>on</strong> by an oscillatory circuit are the similar processes but in the different regi<strong>on</strong>s <str<strong>on</strong>g>of</str<strong>on</strong>g><br />
1<br />
frequencies. The natural frequency <str<strong>on</strong>g>of</str<strong>on</strong>g> a circuit is equal to ω<br />
0<br />
= ( where L and C are<br />
LC<br />
its inductance and capacity). The natural frequency <str<strong>on</strong>g>of</str<strong>on</strong>g> a sample with a thickness d is equal<br />
c<br />
to ω0 = (where ε and µ are a dielectric c<strong>on</strong>stant and a magnetic susceptibility <str<strong>on</strong>g>of</str<strong>on</strong>g><br />
d εµ<br />
a medium).<br />
The natural frequencies <str<strong>on</strong>g>of</str<strong>on</strong>g> a thin metal or semic<strong>on</strong>ductor layers with d = 1 ÷ 100 nm<br />
are situated in the spectral regi<strong>on</strong> from ultraviolet to infrared.<br />
Our calculati<strong>on</strong>s <str<strong>on</strong>g>of</str<strong>on</strong>g> the thickness dependencies <str<strong>on</strong>g>of</str<strong>on</strong>g> the indices <str<strong>on</strong>g>of</str<strong>on</strong>g> refracti<strong>on</strong> n(d) and<br />
the coefficients <str<strong>on</strong>g>of</str<strong>on</strong>g> absorpti<strong>on</strong> α (d)<br />
<str<strong>on</strong>g>of</str<strong>on</strong>g> thin metal and semic<strong>on</strong>ductor films based <strong>on</strong> our<br />
analogues <str<strong>on</strong>g>of</str<strong>on</strong>g> Fresnel’s formulas for absorbing media [1] and the experimental data <str<strong>on</strong>g>of</str<strong>on</strong>g><br />
reflecti<strong>on</strong> and transmissi<strong>on</strong> for these materials show the res<strong>on</strong>ance maxima <str<strong>on</strong>g>of</str<strong>on</strong>g> n(d) and the<br />
λ0<br />
2πc<br />
res<strong>on</strong>ance minima <str<strong>on</strong>g>of</str<strong>on</strong>g> α (d ) . All <str<strong>on</strong>g>of</str<strong>on</strong>g> them take place when d<br />
res<br />
= , ( λ0<br />
= ).<br />
2πn(<br />
d<br />
res<br />
) ω0<br />
Investigati<strong>on</strong> show that silic<strong>on</strong> has the best emissi<strong>on</strong> ability am<strong>on</strong>g the investigated<br />
materials (Ag, Al, Fe, Si, Ge, Se, Te). Silver has greater negative absorpti<strong>on</strong> than silic<strong>on</strong>,<br />
but the luminescence decay in Ag (calculated coefficient <str<strong>on</strong>g>of</str<strong>on</strong>g> a time decay <str<strong>on</strong>g>of</str<strong>on</strong>g> a wave α<br />
1<br />
) is<br />
α1 cn<br />
greater too. The c<strong>on</strong>diti<strong>on</strong> =