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Three - University of Arkansas Physics Department

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ELSEVIER<br />

PASICA @<br />

Improvement <strong>of</strong> in-plane alignment <strong>of</strong> YBa2Cus0,-x films on polycrystallme<br />

alumina substrates using biaxially aligned CeOdYSZ buffer layers<br />

K. Y. Chen, S. Afonso, Q. Xiong, G. J. Salamo, and F. T. Chan<br />

<strong>Department</strong> <strong>of</strong> PhysicdHigh Density Electronics Center, <strong>University</strong> <strong>of</strong> <strong>Arkansas</strong>,<br />

Fayetteville, AR 72701, USA<br />

Biaxially ahgned superconducting YBazC~307.~ thin films have been fabricated on ceramic<br />

alumina substrates. Yttria-stabilized zirconia buffer layers were &st deposited on alumina using<br />

ion-beam assisted pulsed laser deposition. CeOz and YBCO films were subsequently deposited on<br />

the YSZ layer using pulsed laser deposition (PLD). All three layers were (001) oriented and<br />

biaxially textured. The YBCO films have Tc values <strong>of</strong> 89 K and Jc <strong>of</strong> 1x106 A/cm2 at 77 K.<br />

1. INTRODUCTION<br />

The successful deposition <strong>of</strong> biaxially<br />

aligned YBazCus01.x WCO) films on polycrystalline<br />

metal alloy substrates 11-21 has<br />

prompted an interest in polycrystalline or<br />

amorphous dielectric substrates such as<br />

glass [3] and alumina. Polycrystalline<br />

ceramic alumina (AlzOs) has a dielectric<br />

constant and loss tangent lower than that <strong>of</strong><br />

most single-crystal substrates suitable for<br />

YBCO film growth. This dielectric property<br />

is desirable for high frequency applications.<br />

The use <strong>of</strong> ceramic alumina also brings the<br />

advantages <strong>of</strong> isotropic dielectric properties,<br />

as well as lower cost. In this paper, we report<br />

the preparation <strong>of</strong> YBCO films on<br />

polycrystalhe alumina substrates with<br />

biaxially aligned CeOz/YSZ buffer layers.<br />

2. EXPERIMENTS<br />

Biaxially aligned (001) YSZ fhs were<br />

first deposited on one side polished alumina<br />

substrates (Superstrate"996, Coors) using<br />

ion-beam assisted pulsed laser deposition.<br />

Deposition conditions have been given<br />

elsewhere [3]. In brief, about 5000-&thick<br />

YSZ films were deposited at room<br />

temperature in 3x10-4 Torr oxygen partial<br />

pressure. An argon ion beam bombarded the<br />

substrate at an incident angle <strong>of</strong> 55" from the<br />

092 1 -45341971S 17.00 O Elsevier Science B.Y All rights reserved.<br />

PI1 SO92 14534(97)00435-8<br />

substrate normal, while a 193 nm excimer<br />

laser ablated a YSZ target.<br />

It was observed that a thin CeOr layer<br />

(

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