Three - University of Arkansas Physics Department
Three - University of Arkansas Physics Department Three - University of Arkansas Physics Department
Enhancement of Critical Cumnt Density in 'llzBa~aCu20, Superconducting thin Film On Polycrystalline A1203 Substrates Using Textured YSZ Buffer Layers Q. Xiong, S. Afonso, K. Y. Chen, G. Salamo, and F. T. Chan Department of Physics /High Density Electronics Center, University of Arkansas, Fayetteville, AR 72701 ,USA. TlzBa~CaCu20, superconducting thin films on plycrystalline Alfi substrates with and without textured @riastabilized-zirconiawSZ) or CcqNSZ buffer layers were fabricated Ion beam-assisted laser deposition was used to obain the textured YSZ Mer layers. The TI2Ba2CaCuZqr thin films grown on the YSZ buffer layers were highly c-axis oriented with respect to the film surface and svongly in plane textured. The zero resistance temprature of these films was 100-108K. The critical cumnt density (J,) of he films grown on the YSZ buffer layers was 10' A/cm2. Jc of the films grown on the Q0-J YSZ buffer layer or on A12Q substrates dimly was less than lo4 A/cmZ. 1. INTRODUCTION 2. EXPERIMENTS TI2212 films with a higher T, and lower surface resistance than YBCO have attraded some attention. Due to the high volatility and chemical reactivity of thallium at high temperature, thallium related thin films ue much more difficult to fabricate than YBCO thin films. As a nsult, high quality thin films of Tl2212 with 1,'s of up to about lo6 A/cm2 and Tc's of up to about 105K have only been pwn on single crystal L~.AIG[" or sfliGtZ1 substrates. With a bu&r layer be(ween Tl2212 and single crystal substrates other than single crystal LaW& or SrTi4, the highest Tc and J, IM1 so far has been -98K and -3x 1d A/cm2 rtspactivtly. Many studies have shown tbat using ion beam-askted laser high @v m2cu3oy WCO)'" films can be deposited on bhxially aligned YSZ layers grown on noneline subbbates with J,'s up to 8~10~A/cm~ at 75K. Them are very few reports of TI-related films which were grown 00 ~]n-e aysral subsbates using IBAD method. Using BAD method to shrdy TI-2212 fiIm grownonwo-singlecrystalsubsvateswithdifferurt texture4 bu&r Layas may offkr a new a m h for producing inexpensive Tl-related films with high Tc and Jc ciwaue&i~. Here, we report the results of J, of TU2 12 film grown on A110, substrates directly, on YSZI Alfi and on W S Z / Alfi. Ion-beam assisted pllsed laser deposrtion was used to prepare highly baxial aligned YSZ films on polycrystalline Alfi substrates at room temperature. Next a CeQ layer was deposited on the YSZl A124. The M s of the process have been reported e ~ '. In short, d while YSZ was depos~ted by pulse laser deposition, an ion-beam (argon ion source) was used to bomberd the &strates at an angle of 55' from the substrate normal. The thickness of the YSZ buffer Laytrs in our experiment were abwt 5000 A. AAcr dcposlting YSZ buffer layers a CeQ layer about 4000A were deposited on YSZ as a secoed Mer layer for some of YSZ/A124. The 2000-3000A Ba2CaCuZqr precursor films were @oared on Alfi sukstrates on YSZIAlfi, and on WNSZI Alfi qarately at a temperature of 400°C using pulsed laser ablation. In order to optimize synthesis conditions, the films with bulk TI2212 were heated to about 800°C and held at this temperature for abwt 8 hours at various oxygen partla1 pressures for formation of TI2212 phase. Finally, they were annealed at differing temperatures and oxygen partial pressures. 3. RESULTS All YSZ films dtposlted on plycrystalline Al2q substrates were (001) oriented with the axis normal tothe substra(e plane. The full wictth at 09214534197/$17.00 O Elsevier Science B.V. All rights reserved. PI1 S09214534(97)00459-0
Materials Research Society Symposium - Proceedings, v 450, p 345-350,1997 SELF-TRAPPING OF OPTICAL BEAMS AND LICHT-INDUCED WAVEGUIDING IN PHOTOREFRACTIVE tnP AT TELECOMMUNICATION WAVELENGTHS M.E. CHAUVET*, S.A. HAWKINS*, G.J. SALAMO*, M. SEGEV**. D.F. BLISS***, G. BRYANTe** * Department of Physics, University of Arkansas, Fayetteville, AR 72701, salarno@comp.uark.edu ** Department of Electrical Engineering and Advanced Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, New Jersey 08544 ***U.S. Air Force, Rome Laboratory, Hanscom Air Force Base. Massachusetts 0173 1 ABSTRACT We demonstrate self-trapping of a two-dimensional beam at 1.3 microns wavelength in cesonantly-enhanced InP. The self-trapped beam also induces a two-dimensional optical waveguide in bulk InP, which guides a second beam at 1.55 micron wavelength. INTRODUCTION Optical spatial ~olitons'~'~in photorefractive crystals offer potential applications in the field of dl-optical switching and beam steering. A photorefractive soliton is created when a photo- induced index change exactly compensates for the diffraction of the beam. In this sense the beam is able to create its own waveguide. These effects have been extensively studied in ferroelectic oxide and sillenite oxide crystals for visible wavelengths. For the near iafra-red wavelengths used in telecommunications, 1nP:Fe crystals have already demonstrated interesting photorefractive pr~perties.~~" Self-trapping of a laser beam has been reported in 1nP:Fe.l' In this papa we report the fmt observation of the use of a two-dimensional soliton fonned at 1.3p.m in InP to produce a waveguide to guide a second laser beam at 1.55p.m. EXPERIMENT For the experiment the beam from a Nd:Yag laser at 1.3pm is collimated and focused with a 5cm focal length lens on the entrance face of an 1nP:Fe crystal whose temperature is stabilized at 345 Mat. Raa. Soc. Symp. Proc. Vol. 450 1997 Materials Reaeamh Soclety
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Materials Research Society Symposium - Proceedings, v 450, p 345-350,1997<br />
SELF-TRAPPING OF OPTICAL BEAMS AND LICHT-INDUCED WAVEGUIDING IN<br />
PHOTOREFRACTIVE tnP AT TELECOMMUNICATION WAVELENGTHS<br />
M.E. CHAUVET*, S.A. HAWKINS*, G.J. SALAMO*, M. SEGEV**. D.F. BLISS***, G.<br />
BRYANTe**<br />
* <strong>Department</strong> <strong>of</strong> <strong>Physics</strong>, <strong>University</strong> <strong>of</strong> <strong>Arkansas</strong>, Fayetteville, AR 72701,<br />
salarno@comp.uark.edu<br />
** <strong>Department</strong> <strong>of</strong> Electrical Engineering and Advanced Center for Photonics and Optoelectronic<br />
Materials, Princeton <strong>University</strong>, Princeton, New Jersey 08544<br />
***U.S. Air Force, Rome Laboratory, Hanscom Air Force Base. Massachusetts 0173 1<br />
ABSTRACT<br />
We demonstrate self-trapping <strong>of</strong> a two-dimensional beam at 1.3 microns wavelength in<br />
cesonantly-enhanced InP. The self-trapped beam also induces a two-dimensional optical<br />
waveguide in bulk InP, which guides a second beam at 1.55 micron wavelength.<br />
INTRODUCTION<br />
Optical spatial ~olitons'~'~in photorefractive crystals <strong>of</strong>fer potential applications in the field <strong>of</strong><br />
dl-optical switching and beam steering. A photorefractive soliton is created when a photo-<br />
induced index change exactly compensates for the diffraction <strong>of</strong> the beam. In this sense the<br />
beam is able to create its own waveguide. These effects have been extensively studied in<br />
ferroelectic oxide and sillenite oxide crystals for visible wavelengths. For the near iafra-red<br />
wavelengths used in telecommunications, 1nP:Fe crystals have already demonstrated interesting<br />
photorefractive pr~perties.~~" Self-trapping <strong>of</strong> a laser beam has been reported in 1nP:Fe.l' In<br />
this papa we report the fmt observation <strong>of</strong> the use <strong>of</strong> a two-dimensional soliton fonned at<br />
1.3p.m in InP to produce a waveguide to guide a second laser beam at 1.55p.m.<br />
EXPERIMENT<br />
For the experiment the beam from a Nd:Yag laser at 1.3pm is collimated and focused with a<br />
5cm focal length lens on the entrance face <strong>of</strong> an 1nP:Fe crystal whose temperature is stabilized at<br />
345<br />
Mat. Raa. Soc. Symp. Proc. Vol. 450 1997 Materials Reaeamh Soclety
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