Three - University of Arkansas Physics Department
Three - University of Arkansas Physics Department
Three - University of Arkansas Physics Department
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Reflection-second-harmonic generation from GaAs/AlAs and<br />
GaAs/AlGaAs multilayers<br />
Xiaodong Mu, Yujie J. ~ing', Haeyeon Yang, and Gregory J. Salamo<br />
<strong>Department</strong> <strong>of</strong> <strong>Physics</strong>, <strong>University</strong> <strong>of</strong> <strong>Arkansas</strong>, Fayetteville, AR 72701<br />
ABSTRACT<br />
We have observed first-, second- and third-order quasi-phase-matched second-harmonic generation in the reflection geometry<br />
from GaAsIAlAs multilayers. We have measured phase-matching curves and identified all the peaks. The linewidth for the<br />
first order is limited only by wave-vector mismatch. We have demonstrated two-order-<strong>of</strong>-magnitude enhancement solely<br />
using quasi-phase-matched multilayers. We have also achieved cavity-enhanced quasi-phase-matched second-order and nonphase-matched<br />
second-harmonic generation from GaAs/Alo,sGa,,zAs multilayers. We have determined the element <strong>of</strong> the<br />
second-order susceptibility tensor used for quasi-phase matching. We have measured the conversion efficiencies and<br />
discussed possibilities for further enhancements.<br />
Keywords: reflection second harmonic generation, multilayers, cavity enhancement, frequency conversion, Bragg reflection.<br />
1. INTRODUCTION<br />
GaAs and AlGaAs have very large second-order susceptibilities. To achieve efficient frequency conversion, multilayers have<br />
been used to achieve quasi-phase matching (QPM).' There are two configurations for QPM: surface-emitting',2 andrefle~tion.~-~<br />
Although reflected-second-harmonic generation (SHG) in G~AS/A~~G~~.~AS multilayers was initially studied in Refs. [3-51,<br />
sharp QPM peak had not been achieved before due to (i) poor quality <strong>of</strong> the multilayers or (ii) lack <strong>of</strong> a tunable laser. In Ref<br />
[3] 17 pairs <strong>of</strong> alternating layers <strong>of</strong> GaAs and Alo,3Gao.7As on a (I 10)-orientated GaAs substrate were used for forward and<br />
backward SHG (i.e. zero incident angle). The thicknesses <strong>of</strong> the layers were chosen so that each layer is an optical quarterwavelength<br />
thick at 2 pm. These multilayers can satisfy distributed Bragg reflection (DBR) at 2.008 pm. An enhancement by<br />
a factor <strong>of</strong> only 2.7 over the background was obtained because <strong>of</strong> the very broad SH spectrum (> 1000 A). Moreover, part <strong>of</strong><br />
the enhancement may be the result <strong>of</strong> DBR, rather than QPM, since DBR is too close to the broad SH peak. Ref. [4]<br />
illustrates how DBRs can enhance SHG for a single thin layer <strong>of</strong> Alo.3G~.7As in a cavity grown on (100) direction. In this<br />
case, SHG was not quasi-phase-matched. Recently, Alo,aGa,,2As/GaAs multilayers grown on a GaAs (100) substrate were<br />
used to demonstrate QPM at 1.064 However, the QPM peak (i.e. SH intensity vs. pump wavelength) was nor directly<br />
measured since the pump beam can only emit a single wavelength. The alternative measurement <strong>of</strong> enhancement vs. incident<br />
angle did not reveal a peak in the measurement range. The large enhancements were measured for the SH intensity relative to<br />
that for bulk GaAs. However, SH photon energy at 0.532 prn is above the band-gaps <strong>of</strong> both GaAs and Alo.aG&.2As. In<br />
addition, since the multilayers can act as DBR due to a large difference <strong>of</strong> refractive indices, some <strong>of</strong> the enhancements may<br />
be attributed to the DBR. We conclude that the enhancement factors measured in Ret 151 do not necessarily correspond to<br />
the enhancement solely due to QPM. From all the previous result^,^.^ it is obvious that one should design an all-MBE-grown<br />
multilayer structure in such a way that (i) SH photon energy is below the band-gaps <strong>of</strong> the alternating layers and (ii) a cavity<br />
based on a pair <strong>of</strong> DBRs is used to enhance QPM SHG in order to determine the optimum enhancement. In both Ref. [3] and<br />
[5], the conversion efficiency was not measured. Furthermore, quadratic dependence was not confirmed. On the other hand,<br />
in Ref. [4] high efficiency was obtained solely due to the enhancement <strong>of</strong> DBR, however not QPM. Power dependence was<br />
measured with a severe deviation from a square law due to extremely high peak intensities used.<br />
In this proceedings paper, we report our results on detailed investigation <strong>of</strong> reflection-SHG horn GaAsIAlAs and<br />
G~AS~A~~,~G~.~AS<br />
multilayers that have much higher quality. For the first time, we have directly observed a sharp QPM peak<br />
<strong>of</strong> the first-order by measuring the spectrum <strong>of</strong> the reflection-SHG and comparing with the linear reflection spectrum. We<br />
have achieved a very narrow linewidth <strong>of</strong> the QPM peak limited only by wave-vector mismatch. We have achieved an<br />
enhancement factor <strong>of</strong> about 124 over the background. We have also observed QPM peaks at the second- and third-orders<br />
with and/or without a cavity. We have measured the dependence <strong>of</strong> the SH power on the pump power. Furthermore, we have<br />
Correspondence: Ph.: (501) 575-6570; Fax: (501) 575-4580; E-mail: yding@uark.edu<br />
Ultrafast Phenomena in Semiconductors V, Hongxing Jiang, Kong Thon Tsen, Jin-Joo Song, Editors,<br />
Proceedings <strong>of</strong> SPlE Vol. 4280 (2001) a2001 SPlE ,0277-786)(/011$15.00