Lai - Keck Institute for Space Studies
Lai - Keck Institute for Space Studies
Lai - Keck Institute for Space Studies
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DC characteristics of 0.1um InP HEMT with improved<br />
Ohmic process<br />
Ids (m A/m m )/ gm (m S/m m )<br />
1600<br />
1400<br />
1200<br />
1000<br />
800<br />
600<br />
400<br />
200<br />
0<br />
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6<br />
Vgs (V)<br />
Rc (Ω-mm)<br />
BVgd<br />
Gmp, Vds=1V<br />
fT, Vds=1V<br />
MSG @ 26GHz, Vds=1V<br />
0.04 (Ω-mm)<br />
3.5V<br />
1400 (mS/mm)<br />
230 GHz<br />
17 dB<br />
Ids (mA/mm)<br />
Ft, 800 Mag, baseline, Gm ID, DC IV, gate photo, chip photo<br />
700<br />
600<br />
500<br />
400<br />
300<br />
200<br />
100<br />
Vgs=0.4V<br />
Vgs=0V<br />
• 20% improvement in Gmp<br />
• Low V-knee: good <strong>for</strong> low power per<strong>for</strong>mance<br />
• Well controled output conductance<br />
• Good pinch-off characteristics<br />
0<br />
0.0 0.2 0.4 0.6 0.8 1.0 1.2<br />
Vds (V)<br />
Northrop Grumman <strong>Space</strong> Technology<br />
8<br />
GaAs MANTECH, Miami, May 2004<br />
IPRM 2008
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