Lai - Keck Institute for Space Studies

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Cryogenic InP HEMT • Shot noise due to forward Ig can impact overall NFmin Cryo7 4139-043 Cryo 9 4260-31 Igs vs Vgs @15K Ref. M. Pospieszalski et. al. 2005 6
InP HEMT: Ohmic contact improvement 80 0.14 70 60 0.12 0.10 0.08 0.06 0.04 0.02 0.00 WLNA4/A-J3, 4355-071 WLNA4/A-J3, 4355-078 WLNA5/A-J3, 4365-062 WLNA5/A-J3, 4365-063 WLNA5/A-J3, 4365-064 WLNA5/A-J3, 4365-067 WLNA5/A-J3, 4365-068 WLNA5/A-J4, 4365-044 WLNA4/A-J4, 4365-047 WLNA4/A-J4, 4365-048 WLNA4/A-J4, 4365-049 PSF61/A-J1, 4386-070 PSF61/A-J1, 4386-071 PSF61/A-J2, 4386-083 PSF61/A-J2, 4386-084 2008 ICC1/A-J46, 4365-050 ICC1/A-J46, 4365-051 ICC1/A-J46, 4365-052 ICC1/A-J46, 4365-053 N3017/A-J5, 4356-072 N3017/A-J5, 4356-073 N3017/A-J5, 4356-078 N3017/A-J5, 4386-079 N3017/A-J5, 4386-082 WLNA5/A-J8, 4369-033 WLNA5/A-J8, 4369-034 WLNA5/A-J8, 4369-035 WLNA5/A-J8, 4369-079 ICC1/A-J50, 4395-007 ICC1/A-J50, 4395-008 ICC1/A-J50, 4397-009 ICC1/A-J50, 4397-010 ICC1/A-J51, 4395-017 ICC1/A-J51, 4395-018 ICC1/A-J51, 4395-019 ICC1/A-J51, 4395-020 ICC1/A-J51, 4395-021 ICC1/A-J51, 4397-011 ICC1/A-J51, 4397-012 ICC1/A-J51, 4397-013 ICC1/A-J51, 4397-014 ICC1/A-J51, 4397-015 N3017/A/J6, 4365-060 N3017/A/J6, 4365-061 N3017/A/J6, 4365-069 N3017/A/J6, 4386-078 IIPVP1/A-J1, 4369-080 IIPVP1/A-J1, 4369-081 IIPVP1/A-J1, 4397-018 IIPVP1/A-J1, 4395-014 Rc (ohms-mm) 50 40 30 20 10 0 Improved process Baseline Lot, wafer Rc_pg Rc_f ic Rc_pre Rc_pst Rc_po 0 12 24 36 48 60 72 84 96 108 120 132 144 Contact Resistance (mΩ●mm) Typical Rc for baseline Device count Improved process • Ohmic contact process has been optimized – Composite n+ cap – Non-alloyed Ohmic metal • Improved Ohmic contact resistance by over 60% • Good on-wafer uniformity. • Good lot-to-lot repeatability Northrop Grumman Space Technology GaAs MANTECH, Miami, May 2004 7 IPRM 2008
Page 1 and 2: Recent NGST HEMT Device & MMIC Deve
Page 3 and 4: InP HEMT Source Cap Donor Channel B
Page 5: Cryogenic InP HEMT Cryo-4 300K Gm (
Page 9 and 10: Low DC Power InP HEMT Gm (mS/mm) 16
Page 11 and 12: Noise figure of a 3-stage W-band LN
Page 13 and 14: InAs channel Design electron curren
Page 15 and 16: THz InP HEMT • 2 and 4 finger dev
Page 17: Small Signal Model InP HEMT Small-S
Page 20 and 21: Bias dependance fT Fmax fT (GHz) 60
Page 22 and 23: Highest Frequency Circuits Solid -
Page 24 and 25: Going Forward - HEMT Technology For
Page 26: Going Forward - Proposed Topics of

Lai - Keck Institute for Space Studies

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