Lai - Keck Institute for Space Studies

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InP HEMT Device Structure INDUCTOR AIRBRIDGE TFR MIM Epitaxial Material Isolated Material Ohmic source Ω T-gate BACKSIDE VIA drain Ω Gate Silicon Nitride n+ InGaAs Thin Film Resistor Si Plane AlInAs InGaAs Buffer InP HEMT DEVICE 1st level interconnect (FIC) 2nd level interconnect (Top Metal) InP Substrate Back metal Substrate Process commonality between different InP HEMT technologies shortens development cycle 4
Cryogenic InP HEMT Cryo-4 300K Gm (mS/mm) 1600 1400 1200 1000 800 600 400 200 0 0.00E+00 1.00E-02 2.00E-02 3.00E-02 4.00E-02 Id (A) 0.075 0.15 0.225 0.3 0.375 0.45 0.525 0.6 0.675 0.75 0.825 0.9 0.975 Ref. T. Gaier et. al. 2005 Cryo-4 60K •Key to achieving best cryogenic LNA NFmin is highest Gm <strong>for</strong> lowest Id Gm (mS/mm) 1600 1400 1200 1000 800 600 400 200 0 0.00E+00 1.00E-02 2.00E-02 3.00E-02 4.00E-02 Id (A) 0.075 0.15 0.225 0.3 0.375 0.45 0.525 0.6 0.675 0.75 0.825 0.9 0.975 5
Page 1 and 2: Recent NGST HEMT Device & MMIC Deve
Page 3: InP HEMT Source Cap Donor Channel B
Page 7 and 8: InP HEMT: Ohmic contact improvement
Page 9 and 10: Low DC Power InP HEMT Gm (mS/mm) 16
Page 11 and 12: Noise figure of a 3-stage W-band LN
Page 13 and 14: InAs channel Design electron curren
Page 15 and 16: THz InP HEMT • 2 and 4 finger dev
Page 17: Small Signal Model InP HEMT Small-S
Page 20 and 21: Bias dependance fT Fmax fT (GHz) 60
Page 22 and 23: Highest Frequency Circuits Solid -
Page 24 and 25: Going Forward - HEMT Technology For
Page 26: Going Forward - Proposed Topics of

Lai - Keck Institute for Space Studies

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