Lai - Keck Institute for Space Studies

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Bias dependance fT Fmax fT (GHz) 600 550 500 450 400 350 300 250 200 150 100 Id=400mA/mm Id=300mA/mm Id=200mA/mm Id=200 mA/mm Id=300 mA/mm Id=400 mA/mm 0 0.2 0.4 0.6 0.8 1 1.2 Vds (V) Fmax (GHz) 1200 1000 800 600 400 200 0 0.035 um x 40 um (2f) InP HEMT 200 mA/mm 300 mA/mm 400 mA/mm 0 0.2 0.4 0.6 0.8 1 1.2 Vds (V) – 2-finger 40um InP HEMT. – Peak Fmax = 1.1 THz; fT = 550 GHz
Challenging Interconnects and Passives <strong>for</strong> Sub MMW Integrated Circuits (S-MMICs) • TFR, MIMCAP, 2 interconnect metal layers with airbridges • Interconnections scaled down by factor of 5 • Slot via development to 50 um thick InP substrate • Overall S-MMIC size is ~10x smaller than MMW MMICs
Page 1 and 2: Recent NGST HEMT Device & MMIC Deve
Page 3 and 4: InP HEMT Source Cap Donor Channel B
Page 5 and 6: Cryogenic InP HEMT Cryo-4 300K Gm (
Page 7 and 8: InP HEMT: Ohmic contact improvement
Page 9 and 10: Low DC Power InP HEMT Gm (mS/mm) 16
Page 11 and 12: Noise figure of a 3-stage W-band LN
Page 13 and 14: InAs channel Design electron curren
Page 15 and 16: THz InP HEMT • 2 and 4 finger dev
Page 17: Small Signal Model InP HEMT Small-S
Page 22 and 23: Highest Frequency Circuits Solid -
Page 24 and 25: Going Forward - HEMT Technology For
Page 26: Going Forward - Proposed Topics of

Lai - Keck Institute for Space Studies

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