Lai - Keck Institute for Space Studies

More documents

Recommendations

Info

THz Fmax • 2f 20 um InP HEMT •SOLT calibration • Vd = 1V, Id = 6 mA • U@100 GHz ~ 22 dB • MSG@100 GHz ~ 14 dB • Model predicts even higher per<strong>for</strong>mance 20-dB/decade
Small Signal Model InP HEMT Small-Signal Model Param. Unit 100 nm 70 nm* 35 nm Comments RF G m mS/mm 1125 1500 2600 Epitaxy; threshold voltage C gs C ds C dg R ds R g pF/mm pF/mm pF/mm Ω-mm Ω-mm 0.90 0.63 0.16 10.4 120 0.83 0.60 0.18 7.2 150 0.80 0.30 0.13 6.0 250 Lg reduction; higher Cgs due to shorter gate to channel design Improved Cdg Epitaxy; threshold voltage • Sub 50 nm InP HEMT • Vd = 1V, Id = 300 mA/mm • Derived from measurements on 2f10 um, 2f20 um, 2f30 um devices <strong>for</strong> 340 GHz s- MMIC amplifiers f T THz 0.2 0.35 0.45 Simulated from model f max THz 0.4 0.7 1.4 Simulated from model MSG@340 GHz dB 1 4 10 Simulated from model *reported IEDM 2000
Page 1 and 2: Recent NGST HEMT Device & MMIC Deve
Page 3 and 4: InP HEMT Source Cap Donor Channel B
Page 5 and 6: Cryogenic InP HEMT Cryo-4 300K Gm (
Page 7 and 8: InP HEMT: Ohmic contact improvement
Page 9 and 10: Low DC Power InP HEMT Gm (mS/mm) 16
Page 11 and 12: Noise figure of a 3-stage W-band LN
Page 13 and 14: InAs channel Design electron curren
Page 15: THz InP HEMT • 2 and 4 finger dev
Page 20 and 21: Bias dependance fT Fmax fT (GHz) 60
Page 22 and 23: Highest Frequency Circuits Solid -
Page 24 and 25: Going Forward - HEMT Technology For
Page 26: Going Forward - Proposed Topics of

Lai - Keck Institute for Space Studies

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?