Lai - Keck Institute for Space Studies

More documents

Recommendations

Info

Sub 50 nm T-gate • >5:1 ratio gate top to gate length <strong>for</strong> low Rg • Single recess, 100 nm length typical • 20 KeV exposure, two layer resist scheme
THz InP HEMT • 2 and 4 finger devices • Typical d.c. Gmp > 2 S/mm @1V Vds • Low on-resistance and knee voltage • Good pinchoff & output resistance Vd = 1V Vg from -0.1V to +0.4V
Page 1 and 2: Recent NGST HEMT Device & MMIC Deve
Page 3 and 4: InP HEMT Source Cap Donor Channel B
Page 5 and 6: Cryogenic InP HEMT Cryo-4 300K Gm (
Page 7 and 8: InP HEMT: Ohmic contact improvement
Page 9 and 10: Low DC Power InP HEMT Gm (mS/mm) 16
Page 11 and 12: Noise figure of a 3-stage W-band LN
Page 13: InAs channel Design electron curren
Page 17: Small Signal Model InP HEMT Small-S
Page 20 and 21: Bias dependance fT Fmax fT (GHz) 60
Page 22 and 23: Highest Frequency Circuits Solid -
Page 24 and 25: Going Forward - HEMT Technology For
Page 26: Going Forward - Proposed Topics of

Lai - Keck Institute for Space Studies

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?