K817P/ K827PH/ K847PH Optocoupler with Phototransistor Output

Optocoupler with Phototransistor Output
K817P/ K827PH/ K847PH
Vishay Telefunken
Description
The K817P/ K827PH/ K847PH consist of a phototransistor
optically coupled to a gallium arsenide
infrared-emitting diode in an 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Programmable logic controllers, modems, answering
machines, general applications
Features
Coll.
Emitter
14925
Endstackable to 2.54 mm (0.1’) spacing
DC isolation test voltage V IO = 5 kV
Low coupling capacitance of typical 0.3 pF
Current Transfer Ratio (CTR) selected into
groups
13929
Low temperature coefficient of CTR
Wide ambient temperature range
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
CSA (C–UL) 1577 recognized,
file number E-76222 – Double Protection
Coupling System U
Anode Cath.
4 PIN
8 PIN
C
16 PIN
Order Instruction
Ordering Code CTR Ranking Remarks
K817P 50 to 600% 4 Pin = Single channel
K827PH 50 to 600% 8 Pin = Dual channel
K847PH 50 to 600% 16 Pin = Quad channel
K817P1 40 to 80% 4 Pin = Single channel
K817P2 63 to 125% 4 Pin = Single channel
K817P3 100 to 200% 4 Pin = Single channel
K817P4 160 to 320% 4 Pin = Single channel
K817P5 50 to 150% 4 Pin = Single channel
K817P6 100 to 300% 4 Pin = Single channel
K817P7 80 to 160% 4 Pin = Single channel
K827P8 130 to 260% 4 Pin = Single channel
K817P9 200 to 400% 4 Pin = Single channel
Rev. A2, 11–Jan–99 177

K817P/ K827PH/ K847PH
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V R 6 V
Forward current I F 60 mA
Forward surge current t p ≤ 10 s I FSM 1.5 A
Power dissipation T amb ≤ 25C P V 100 mW
Junction temperature T j 125 C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V CEO 70 V
Emitter collector voltage V ECO 7 V
Collector current I C 50 mA
Peak collector current t p /T = 0.5, t p ≤ 10 ms I CM 100 mA
Power dissipation T amb ≤ 25C P V 150 mW
Junction temperature T j 125 C
Coupler
Parameter Test Conditions Symbol Value Unit
AC isolation test voltage (RMS) t = 1 min V 1) IO 5 kV
Total power dissipation T amb ≤ 25C P tot 250 mW
Operating ambient temperature
T amb –40 to +100 C
range
Storage temperature range T stg –55 to +125 C
Soldering temperature 2 mm from case, t ≤ 10 s T sd 260 C
1) Related to standard climate 23/50 DIN 50014
178
Rev. A2, 11–Jan–99

K817P/ K827PH/ K847PH
Vishay Telefunken
Electrical Characteristics (T amb = 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage I F = 50 mA V F 1.25 1.6 V
Junction capacitance V R = 0 V, f = 1 MHz C j 50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage I C = 100 A V CEO 70 V
Emitter collector voltage I E = 100 A V ECO 7 V
Collector dark current V CE = 20 V, I F = 0, E = 0 I CEO 100 nA
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter I F = 10 mA, I C = 1 mA V CEsat 0.3 V
saturation voltage
Cut-off frequency I F = 10 mA, V CE = 5 V, f c 100 kHz
R L = 100
Coupling capacitance f = 1 MHz C k 0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
I C/IF
V CE = 5 V, I F = 5 mA K817P CTR 0.5 6.0
V CE = 5 V, I F = 5 mA K827PH CTR 0.5 6.0
V CE = 5 V, I F = 5 mA K847PH CTR 0.5 6.0
V CE = 5 V, I F = 10 mA K817P1 CTR 0.4 0.8
V CE = 5 V, I F = 10 mA K817P2 CTR 0.63 1.25
V CE = 5 V, I F = 10 mA K817P3 CTR 1.0 2.0
V CE = 5 V, I F = 10 mA K817P4 CTR 1.6 3.2
V CE = 5 V, I F = 5 mA K817P5 CTR 0.5 1.5
V CE = 5 V, I F = 5 mA K817P6 CTR 1.0 3.0
V CE = 5 V, I F = 5 mA K817P7 CTR 0.8 1.6
V CE = 5 V, I F = 5 mA K817P8 CTR 1.3 2.6
V CE = 5 V, I F = 5 mA K817P9 CTR 2.0 4.0
Rev. A2, 11–Jan–99 179

K817P/ K827PH/ K847PH
Vishay Telefunken
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Delay time V S = 5 V, I C = 2 mA, RL = 100 (see figure 1) t d 3.0 s
Rise time
t r 3.0 s
Fall time t f 4.7 s
Storage time t s 0.3 s
Turn-on time t on 6.0 s
Turn-off time t off 5.0 s
Turn-on time V S = 5 V, I F = 10 mA, RL = 1 k (see figure 2) t on 9.0 s
Turn-off time
t off 18.0 s
0
I F
I F
+ 5 V
I C
= 2 mA ; Adjusted through
input amplitude
R G
= 50
t p
T = 0.01
t p
= 50 s
Channel I
Oscilloscope
Channel II R L
= 1 M
50 100
C L
= 20 pF
95 10804
Figure 1. Test circuit, non-saturated operation
100%
90%
96 11698
I F
0
t
t p
I C
0
I F
I F = 10 mA
+ 5 V
10%
0
t r
t
R G = 50
t d
t on
t s t f
t p
T 0.01
t p = 50 s
95 10843
50
1 k
I C
Channel I
Channel II
Oscilloscope
R L ≥ 1 M
C L ≤ 20 pF
pulse dura-
delay time
rise time
turn-on time
t p
tion
t d
t r
t on (= t d + t r )
t off
t s
t f
t off (= t s + t f )
storage time
fall time
turn-off time
Figure 2. Test circuit, saturated operation
Figure 3. Switching times
180
Rev. A2, 11–Jan–99

K817P/ K827PH/ K847PH
Vishay Telefunken
Typical Characteristics (T amb = 25 C, unless otherwise specified)
P tot – Total Power Dissipation ( mW )
300
250
200
150
100
50
Coupled device
Phototransistor
IR-diode
0
0 40 80 120
96 11700 T amb – Ambient Temperature (
°C )
Figure 4. Total Power Dissipation vs.
Ambient Temperature
I CEO – Collector Dark Current,
with open Base ( nA )
10000
95 11026
1000
100
10
V CE =20V
I F =0
1
0 25 50 75
T amb – Ambient Temperature ( °C )
Figure 7. Collector Dark Current vs.
Ambient Temperature
100
I F – Forward Current ( mA )
1000.0
100.0
10.0
1.0
I C – Collector Current ( mA )
100
10
1
0.1
V CE =5V
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
V F – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
95 11027
0.01
0.1 1 10
I F – Forward Current ( mA )
100
Figure 8. Collector Current vs. Forward Current
CTR rel – Relative Current Transfer Ratio
2.0
1.5
1.0
0.5
0
–25 0 25 50
V CE =5V
I F =5mA
95 11025 T amb – Ambient Temperature ( °C )
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
75
I C – Collector Current ( mA )
95 10985
100
10
1
I F =50mA
0.1
0.1 1 10
20mA
10mA
5mA
2mA
1mA
V CE – Collector Emitter Voltage ( V )
100
Figure 9. Collector Current vs. Collector Emitter Voltage
Rev. A2, 11–Jan–99 181

K817P/ K827PH/ K847PH
Vishay Telefunken
V CEsat – Collector Emitter Saturation Voltage ( V )
95 11028
1.0
0.8
0.6
0.4
0.2
CTR=50%
0
1 10
10%
20%
I C – Collector Current ( mA )
100
Figure 10. Collector Emitter Saturation Voltage vs.
Collector Current
t on / t off – Turn on / Turn off Time ( s )
95 11031
50
40
30
20
10
Saturated Operation
V S =5V
R L =1k
0
0 5 10 15
I F – Forward Current ( mA )
Figure 12. Turn on / off Time vs. Forward Current
t off
t on
20
CTR – Current Transfer Ratio ( % )
95 11029
1000
100
10
V CE =5V
1
0.1 1 10
I F – Forward Current ( mA )
100
Figure 11. Current Transfer Ratio vs. Forward Current
t on / t off – Turn on / Turn off Time ( s )
95 11030
10
8
6
4
2
t on
t off
Non Saturated
Operation
V S =5V
R L =100
0
0 2 4 6
I C – Collector Current ( mA )
Figure 13. Turn on / off Time vs. Collector Current
10
Pin 1 Indication
Type
K817P
820UTK63
Date
Code
(YM)
15080
Coupling
System
Company
Logo
Production
Location
Indicator
Figure 14. Marking example
182
Rev. A2, 11–Jan–99

K817P/ K827PH/ K847PH
Vishay Telefunken
Dimensions of K817P. in mm
weight:
ca. 0.25 g
creepage distance: 6 mm
air path: 6 mm
after mounting on PC board
14789
Dimensions of K827PH in mm
weight:
creepage distance:
air path:
ca. 0.55 g
6 mm
6 mm
after mounting on PC board
14784
Rev. A2, 11–Jan–99 183

K817P/ K827PH/ K847PH
Vishay Telefunken
Dimensions of K847PH in mm
weight:
ca. 1.0 g
creepage distance: 6 mm
air path: 6 mm
after mounting on PC board
14783
184
Rev. A2, 11–Jan–99