PIC12F683 Data Sheet - Microchip
PIC12F683 Data Sheet - Microchip PIC12F683 Data Sheet - Microchip
PIC12F683 15.2 DC Characteristics: PIC12F683-I (Industrial) PIC12F683-E (Extended) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial -40°C ≤ TA ≤ +125°C for extended Param No. Device Characteristics Min Typ† Max Units VDD Conditions D010 Supply Current (IDD) (1, 2) — 11 16 μA 2.0 FOSC = 32 kHz — 18 28 μA 3.0 LP Oscillator mode — 35 54 μA 5.0 D011* — 140 240 μA 2.0 FOSC = 1 MHz — 220 380 μA 3.0 XT Oscillator mode — 380 550 μA 5.0 D012 — 260 360 μA 2.0 FOSC = 4 MHz — 420 650 μA 3.0 XT Oscillator mode — 0.8 1.1 mA 5.0 D013* — 130 220 μA 2.0 FOSC = 1 MHz — 215 360 μA 3.0 EC Oscillator mode — 360 520 μA 5.0 D014 — 220 340 μA 2.0 FOSC = 4 MHz — 375 550 μA 3.0 EC Oscillator mode — 0.65 1.0 mA 5.0 D015 — 8 20 μA 2.0 FOSC = 31 kHz — 16 40 μA 3.0 LFINTOSC mode — 31 65 μA 5.0 D016* — 340 450 μA 2.0 FOSC = 4 MHz — 500 700 μA 3.0 HFINTOSC mode — 0.8 1.2 mA 5.0 D017 — 410 650 μA 2.0 FOSC = 8 MHz — 700 950 μA 3.0 HFINTOSC mode — 1.30 1.65 mA 5.0 D018 — 230 400 μA 2.0 FOSC = 4 MHz — 400 680 μA 3.0 EXTRC mode (3) — 0.63 1.1 mA 5.0 D019 — 2.6 3.25 mA 4.5 FOSC = 20 MHz — 2.8 3.35 mA 5.0 HS Oscillator mode * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. 3: For RC oscillator configurations, current through REXT is not included. The current through the resistor can be extended by the formula IR = VDD/2REXT (mA) with REXT in kΩ. Note DS41211D-page 118 © 2007 Microchip Technology Inc.
PIC12F683 15.3 DC Characteristics: PIC12F683-I (Industrial) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Param No. Device Characteristics Min Typ† Max Units VDD Conditions Note — 0.05 1.2 μA 2.0 WDT, BOR, Comparators, VREF and D020 Power-down Base Current(IPD) (2) — 0.15 1.5 μA 3.0 T1OSC disabled — 0.35 1.8 μA 5.0 — 150 500 nA 3.0 -40°C ≤ TA ≤ +25°C D021 — 1.0 2.2 μA 2.0 WDT Current (1) — 2.0 4.0 μA 3.0 — 3.0 7.0 μA 5.0 D022 — 42 60 μA 3.0 BOR Current (1) — 85 122 μA 5.0 D023 — 32 45 μA 2.0 Comparator Current (1) , both — 60 78 μA 3.0 comparators enabled — 120 160 μA 5.0 D024 — 30 36 μA 2.0 CVREF Current (1) (high range) — 45 55 μA 3.0 — 75 95 μA 5.0 D025* — 39 47 μA 2.0 CVREF Current (1) (low range) — 59 72 μA 3.0 — 98 124 μA 5.0 D026 — 4.5 7.0 μA 2.0 T1OSC Current (1) , 32.768 kHz — 5.0 8.0 μA 3.0 — 6.0 12 μA 5.0 D027 — 0.30 1.6 μA 3.0 A/D Current (1) , no conversion in — 0.36 1.9 μA 5.0 progress * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD. © 2007 Microchip Technology Inc. DS41211D-page 119
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- Page 75 and 76: PIC12F683 10.2 Reading the EEPROM D
- Page 77 and 78: PIC12F683 11.0 CAPTURE/COMPARE/PWM
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- Page 105 and 106: PIC12F683 13.2 Instruction Descript
- Page 107 and 108: PIC12F683 DECFSZ Decrement f, Skip
- Page 109 and 110: PIC12F683 RETFIE Return from Interr
- Page 111 and 112: PIC12F683 SUBWF Subtract W from f S
- Page 113 and 114: PIC12F683 14.0 DEVELOPMENT SUPPORT
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- Page 117 and 118: PIC12F683 15.0 ELECTRICAL SPECIFICA
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- Page 159 and 160: PIC12F683 FIGURE 16-40: TYPICAL HFI
- Page 161 and 162: PIC12F683 17.0 PACKAGING INFORMATIO
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<strong>PIC12F683</strong><br />
15.2 DC Characteristics: <strong>PIC12F683</strong>-I (Industrial)<br />
<strong>PIC12F683</strong>-E (Extended)<br />
DC CHARACTERISTICS<br />
Standard Operating Conditions (unless otherwise stated)<br />
Operating temperature -40°C ≤ TA ≤ +85°C for industrial<br />
-40°C ≤ TA ≤ +125°C for extended<br />
Param<br />
No.<br />
Device Characteristics Min Typ† Max Units<br />
VDD<br />
Conditions<br />
D010 Supply Current (IDD) (1, 2) — 11 16 μA 2.0 FOSC = 32 kHz<br />
— 18 28 μA 3.0 LP Oscillator mode<br />
— 35 54 μA 5.0<br />
D011* — 140 240 μA 2.0 FOSC = 1 MHz<br />
— 220 380 μA 3.0 XT Oscillator mode<br />
— 380 550 μA 5.0<br />
D012 — 260 360 μA 2.0 FOSC = 4 MHz<br />
— 420 650 μA 3.0 XT Oscillator mode<br />
— 0.8 1.1 mA 5.0<br />
D013* — 130 220 μA 2.0 FOSC = 1 MHz<br />
— 215 360 μA 3.0 EC Oscillator mode<br />
— 360 520 μA 5.0<br />
D014 — 220 340 μA 2.0 FOSC = 4 MHz<br />
— 375 550 μA 3.0 EC Oscillator mode<br />
— 0.65 1.0 mA 5.0<br />
D015 — 8 20 μA 2.0 FOSC = 31 kHz<br />
— 16 40 μA 3.0 LFINTOSC mode<br />
— 31 65 μA 5.0<br />
D016* — 340 450 μA 2.0 FOSC = 4 MHz<br />
— 500 700 μA 3.0 HFINTOSC mode<br />
— 0.8 1.2 mA 5.0<br />
D017 — 410 650 μA 2.0 FOSC = 8 MHz<br />
— 700 950 μA 3.0 HFINTOSC mode<br />
— 1.30 1.65 mA 5.0<br />
D018 — 230 400 μA 2.0 FOSC = 4 MHz<br />
— 400 680 μA 3.0 EXTRC mode (3)<br />
— 0.63 1.1 mA 5.0<br />
D019 — 2.6 3.25 mA 4.5 FOSC = 20 MHz<br />
— 2.8 3.35 mA 5.0 HS Oscillator mode<br />
* These parameters are characterized but not tested.<br />
† <strong>Data</strong> in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance<br />
only and are not tested.<br />
Note 1: The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave,<br />
from rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.<br />
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O<br />
pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have<br />
an impact on the current consumption.<br />
3: For RC oscillator configurations, current through REXT is not included. The current through the resistor can<br />
be extended by the formula IR = VDD/2REXT (mA) with REXT in kΩ.<br />
Note<br />
DS41211D-page 118<br />
© 2007 <strong>Microchip</strong> Technology Inc.