eur op eanexhibitionofcreati vityandinnovation - Europe Direct Iasi
eur op eanexhibitionofcreati vityandinnovation - Europe Direct Iasi
eur op eanexhibitionofcreati vityandinnovation - Europe Direct Iasi
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EUROINVENT 2013<br />
8.18.<br />
Title<br />
Authors<br />
Institution<br />
Description EN<br />
Class no.<br />
PHOTOLUMINESCENCE OF THE MASSIVE FS- GaN<br />
LAYERS GROWN BY CHEMICAL TRANSPORT<br />
REACTIONS METHOD AND ANNEALED IN BISMUTH<br />
S.D.Raevschi, Yu.V.Zhilyaev, K.D.Sushkevich,<br />
L.V.Gorchak, V.M.Botnariuk, A.V.Koval<br />
Moldova State University<br />
A.F.Ioffe Physicotecnical Institute of the Russian<br />
Academy of Science,<br />
The photoluminescence (PL) spectra of massive,<br />
free-standing FS- GaN layers before and after annealed<br />
in bismuth melt at 900-1320K are studied at 77К. Layers<br />
grown up by chemical transport reactions method on<br />
sapphire. It is established that FS-GaN starts to decay in<br />
bismuth at 1100К. In spectrum PL of initial samples a<br />
number characteristic for GaN bands (EВ, F, Y) with<br />
maxima of radiation is revealed at 3.454, 3.369-3.173<br />
and 2.138- 2.175 eV. As a result of the FS-GaN<br />
annealing in bismuth melt a band of area 3.369-3.173 eV<br />
disappear, intensity of EВ band falls down a little, and<br />
band Y does not undergo changes. The PL spectra of a<br />
buffer and face surface of layers as a result of annealing<br />
get an identical kind, and the centers of radiation<br />
belonging it are not found out to bismuth.<br />
INTERNATIONAL EXHIBITS<br />
79
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