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Diamond Detectors for Ionizing Radiation - HEPHY

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Chapter 7<br />

<strong>Radiation</strong> Hardness<br />

7.1 <strong>Radiation</strong> Defects<br />

The properties of diamond may be aected by impurities in the lattice. Especially, the<br />

charge collection distance strongly depends on the presence of inhomogeneities.<br />

Atoms that do not t into the diamond lattice or lattice positions that are not occupied<br />

are called defects in general. In the virgin state, CVD polycrystalline diamond has a<br />

certain number of defects, depending on the growth parameters. In particular, there<br />

are considerable nitrogen impurities. Additionally, the grain boundaries are suspected<br />

to provide a signicant number of charge traps and recombination centers. The defects<br />

introduce energy levels inside the band gap. As the carrier transition between valence<br />

and conduction bands becomes more probable with the introduction of intermediate levels,<br />

the intrinsic carrier density increases, resulting in a higher leakage current. However, as<br />

diamond has a very large band gap, and the impurities in detector material are below the<br />

ppm range, the bulk current remains negligible in practice. In fact, no signicant eect<br />

has been observed on the leakage current be<strong>for</strong>e and after the irradiation experiments.<br />

Additional defects are introduced with irradiation [6]. Depending on the incident<br />

particle type and momentum, various defects may occur by atom displacement. With<br />

low momentum particles, only simple defects are probable. These are vacancies, where<br />

a lattice position is unoccupied and interstitials, where an atom is posed in between the<br />

lattice. Due to the conservation of matter, these two always occur together, called Frenkel<br />

defects. Heavy particles, especially ions, usually have a very short range in the order of<br />

micrometers. They are stopped in the diamond lms, transfering their whole energy<br />

and additionally placing themselves in the diamond lattice. For this reason, the damage<br />

induced by ions, is by orders of magnitude higher than that of traversing particles.<br />

All of these defects aect the charge collection eciency by the creation of trapping<br />

and recombination centers, which decrease the carrier lifetime and thus the drift distance.<br />

Considering the tightly bound, compact lattice, diamond has a reputation of being<br />

quite insensitive to radiation. However, as theoretical prediction is dicult, experiments<br />

have been carried out to observe the damage introduced by various kinds of particles.<br />

37

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