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Diamond Detectors for Ionizing Radiation - HEPHY

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Chapter 5<br />

Detector Material Comparison<br />

5.1 <strong>Diamond</strong> <strong>Detectors</strong><br />

With a band gap of E g = 5:5eV, diamond is regarded as an insulator. This implies<br />

negligible intrinsic carrier densities even at room temperature, allowing to operate intrinsic<br />

diamond lm as a detector. Electrodes are applied to the diamond lm on opposite sides<br />

to <strong>for</strong>m Ohmic contacts. As there is no pn-junction, the polarity of the electric eld is<br />

irrelevant. The dark current of the diamond samples, including both bulk and surface<br />

currents, is less than 1 nA cm ,2 at an electric eld of 1 V m ,1 [22].<br />

According to the high carrier mobilities in diamond, the charge collection is very fast,<br />

taking about 1 ns in detectors of approximately 500 m thickness. It has been shown that<br />

CVD diamond detectors are able to count heavy ion rates above 10 8 cm ,2 s ,1 with a single<br />

readout channel.<br />

5.1.1 Charge Collection Distance<br />

Due to the polycrystalline nature of CVD diamond, the charge collection is not straight<strong>for</strong>ward<br />

as in homogeneous detector materials. The grain structure (g. 3.3) results in a<br />

quality gradient along the y coordinate (depth axis). The grain boundaries are suspected<br />

to provide charge trapping and recombination centers.<br />

On the substrate side (y = 0), the lateral grain size is at its minimum, resulting in<br />

a large amount of traps. Thus, the mean free path <strong>for</strong> the carriers is very short. With<br />

ascending y the single-crystal volumes expand, causing the trap density to shrink and the<br />

mean free path to increase. A linear model has been proposed [23] <strong>for</strong> the local mean free<br />

path as a function of y, starting from (almost) zero at y = 0 up to a certain value <strong>for</strong><br />

y = D. This model satises experimental data [24].<br />

Neglecting border limits, the sum of the mean free paths <strong>for</strong> electrons and holes gives<br />

the overall average distance that electrons and holes drift apart in an electric eld. This<br />

value has been established as the charge collection distance d c , describing the quality of<br />

the diamond sample. The border limits are irrelevant as long as d c D. The collection<br />

distance, or sum mean free path, can be stated as the product of carrier velocity and<br />

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