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Diamond Detectors for Ionizing Radiation - HEPHY

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CHAPTER 3. MATERIAL PROPERTIES 14<br />

Figure 3.5: Left: Substrate (left) and growth (right) sides of the same diamond sample (415 m<br />

thick). Note the dierent scales of the images: 2 m <strong>for</strong> the substrate side and 100 m <strong>for</strong> the<br />

growth side.<br />

200 nm) is sputtered to prevent oxidation and to provide a surface suitable <strong>for</strong> wirebonding.<br />

Besides this standard contact, also a Ti/Au combination was used. For the<br />

indium bump bonding of pixel detectors (see section 8.3), Cr/Ni/Au and Ti/W processes<br />

were developed.

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