Photoresist

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Ch7 - Areal Image: Pattern of radiation at the surface of the wafer during exposure. To transfer a pattern, radiation changes the properties of the light sensitive material so that a replica (or a negative of the mask) of the mask is left behind.
<strong>Photoresist</strong>s (PR) or resists Three components: Resin, base material Photoactive compound (PAC) Solvent Measures of performance: • Sensitivity: amount of light energy necessary to create the chemical change in the PR • Resolution: smallest feature that can be reproduced in PR Types of PR: • Positive: i Exposed regions dissolve more quickly during development process (has better resolution than negative) • Negative: Unexposed regions dissolve more quickly during • Negative: Unexposed regions dissolve more quickly during development process
Page 1: Chapter 8 Photoresists
Page 5 and 6: Substitute: Methyl group Chlorine A
Page 7 and 8: Positive resist In i-line and g-lin
Page 9 and 10: Light, water are the main drivers o
Page 11 and 12: Contrast, γ , is the slope of the
Page 13 and 14: Figure 8.9 Typical process flow in
Page 15 and 16: Industrial systems are called “co
Page 17: Exposing resist over topology cause

Photoresist

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