Photoresist
Photoresist
Photoresist
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Contrast (γ) curves: a way to characterize resist<br />
Procedure for determining i contrast:<br />
1) spin coat a layer of PR<br />
2) Measure PR thickness<br />
3) Expose for short period of time,<br />
Exp. dose = Intensity * t exp Units: mJ/cm 2<br />
4) Immerse wafer in developer for fixed time<br />
5) Rinse and measure remaining resist<br />
Assuming positive resist and short exposure time, very little of the<br />
PAC has changed to be soluble in the developer so resist thickness<br />
is nearly the same as original thickness.<br />
Repeat experiment for increasingly larger doses and obtain a<br />
contrast curve by plotting resist thickness versus log of incident<br />
dose.