Chapter 12 Physical Vapor Deposition (PVD)
Chapter 12 Physical Vapor Deposition (PVD) Chapter 12 Physical Vapor Deposition (PVD)
For reasonable deposition rates, the vapor pressure must be ∼ 10 mTorr. This makes it nearly impossible ibl to evaporate some materials (refractory metals: Ta, W, Mo, Ti) Figure 12.2 Vapor pressure curves for some commonly evaporated materials (data adapted from Alcock et al.).
Deposition rate depends on position of wafer View factor, k depends on R, Θ, Φ Wafers directly above the crucible will be coated more heavily than wafers off to the side. Wafers can all be mounted on the surface of a sphere (planetary) for more uniform deposition. Figure 12.3 The geometry of deposition for a wafer (A) in an arbitrary position and (B) on the surface of a sphere.
- Page 1 and 2: Chapter 12 Physical Vapor Depositio
- Page 3: Evaporation Process: *Chamber under
- Page 7 and 8: Evaporator systems: crucible heatin
- Page 9 and 10: Evaporator systems: crucible heatin
- Page 11 and 12: Evaporation of Alloys Figure 12.11
- Page 13 and 14: Basic steps in sputter deposition:
- Page 15 and 16: Sputter Yield (S) Determines rate o
- Page 17 and 18: Magnetron Sputtering - a magnetic f
- Page 19 and 20: Film morphology Zone model (Zones 1
- Page 21 and 22: Can improve step coverage by collim
- Page 23 and 24: Reactive sputtering: use of reactiv
- Page 25 and 26: A thin film deposited on a substrat
<strong>Deposition</strong> rate depends on position of wafer<br />
View factor, k depends on R, Θ, Φ<br />
Wafers directly above the crucible will be coated more heavily than<br />
wafers off to the side. Wafers can all be mounted on the surface of a<br />
sphere (planetary) for more uniform deposition.<br />
Figure <strong>12</strong>.3 The geometry of deposition for a wafer (A) in an arbitrary<br />
position and (B) on the surface of a sphere.
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