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Chapter 12 Physical Vapor Deposition (PVD)

Chapter 12 Physical Vapor Deposition (PVD)

Chapter 12 Physical Vapor Deposition (PVD)

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Evaporation Process:<br />

*Chamber under high vacuum (low pressure and long mfp)<br />

*metal pieces placed in crucible (charge) and heated to T m<br />

*substrates placed above the crucible, and<br />

*metal deposits on the substrates.<br />

Not shown in picture is a shutter that would be<br />

opened when the evaporation rate reaches a certain<br />

rate indicating pure metal deposition.<br />

View factor associated with deposition (like RTP);<br />

deposition rate depends on location of wafer in<br />

chamber (above crucible will have ↑ dep rate).<br />

For better uniformity and step coverage, planetary<br />

sample holders are rotated during deposition and<br />

samples are heated.<br />

<strong>Deposition</strong> rate monitored with quartz crystal<br />

(oscillates at a resonance frequency that shifts when<br />

additional mass is deposited on the crystal).<br />

Figure <strong>12</strong>.1 A simple diffusion-pumped<br />

evaporator showing vacuum plumbing and<br />

the location of the charge-containing<br />

crucible and the wafers.

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