Chapter 12 Physical Vapor Deposition (PVD)
Chapter 12 Physical Vapor Deposition (PVD) Chapter 12 Physical Vapor Deposition (PVD)
Figure 12.29 Cross section electron micrograph of a moderately high aspect ratio contact that has been sputterdeposited with TiN (after Kohlhase, Mändl, and Pamler, reprinted by permission, AIP).
A thin film deposited on a substrate can be either in tensile stress or compressive stress; if stress is too large, film may peel away from the surface; implications in reliability. Figure 12.30 The change in wafer deflection may be used to measure the stress in a deposited layer. This is typically measured using a reflected laser beam.
- Page 1 and 2: Chapter 12 Physical Vapor Depositio
- Page 3 and 4: Evaporation Process: *Chamber under
- Page 5 and 6: Deposition rate depends on position
- Page 7 and 8: Evaporator systems: crucible heatin
- Page 9 and 10: Evaporator systems: crucible heatin
- Page 11 and 12: Evaporation of Alloys Figure 12.11
- Page 13 and 14: Basic steps in sputter deposition:
- Page 15 and 16: Sputter Yield (S) Determines rate o
- Page 17 and 18: Magnetron Sputtering - a magnetic f
- Page 19 and 20: Film morphology Zone model (Zones 1
- Page 21 and 22: Can improve step coverage by collim
- Page 23: Reactive sputtering: use of reactiv
Figure <strong>12</strong>.29 Cross section electron micrograph of a<br />
moderately high aspect ratio contact that has been sputterdeposited<br />
with TiN (after Kohlhase, Mändl, and Pamler,<br />
reprinted by permission, AIP).
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