Chapter 12 Physical Vapor Deposition (PVD)
Chapter 12 Physical Vapor Deposition (PVD) Chapter 12 Physical Vapor Deposition (PVD)
Ionized Metal Plasma (IMP) sputter deposition – ejected atoms pass through a second plasma; IMP process produces near-vertical deposition. Figure 12.25 The Endura system by Applied Materials uses a number of PVD or CVD chambers fed by a central robot. For conventional and IMP sputtering, targets are hinged to open upward. Two open chambers are shown, along with the load lock (from Applied Materials).
Reactive sputtering: use of reactive gases (O 2 , CH 4 , NH 3 , N 2 ) rather than inert gases to sputter oxides, carbide, nitrides. Example below is for TiN Figure 12.28 Resistivity and composition of reactively sputtered TiN as a function of the N 2 flow in the sputtering chamber (after Tsai, Fair, and Hodul, reprinted by permission, The Electrochemical Society, and Molarius and Orpana, reprinted by permission, Kluwer Academic Publishing).
- Page 1 and 2: Chapter 12 Physical Vapor Depositio
- Page 3 and 4: Evaporation Process: *Chamber under
- Page 5 and 6: Deposition rate depends on position
- Page 7 and 8: Evaporator systems: crucible heatin
- Page 9 and 10: Evaporator systems: crucible heatin
- Page 11 and 12: Evaporation of Alloys Figure 12.11
- Page 13 and 14: Basic steps in sputter deposition:
- Page 15 and 16: Sputter Yield (S) Determines rate o
- Page 17 and 18: Magnetron Sputtering - a magnetic f
- Page 19 and 20: Film morphology Zone model (Zones 1
- Page 21: Can improve step coverage by collim
- Page 25 and 26: A thin film deposited on a substrat
Reactive sputtering: use of reactive gases (O 2 , CH 4 , NH 3 , N 2 ) rather<br />
than inert gases to sputter oxides, carbide, nitrides.<br />
Example below is for TiN<br />
Figure <strong>12</strong>.28 Resistivity and composition of reactively sputtered TiN as a function of the N 2<br />
flow in the sputtering chamber (after Tsai, Fair, and Hodul, reprinted by permission, The<br />
Electrochemical Society, and Molarius and Orpana, reprinted by permission, Kluwer<br />
Academic Publishing).
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