Chapter 12 Physical Vapor Deposition (PVD)

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Step Coverage Application of substrate heat will dramatically improve the step coverage due to surface diffusion; High AR can be a problem otherwise. Figure 12.22 Cross section of the time evolution of the typical step coverage for unheated sputter deposition in a high aspect ratio contact.
Can improve step coverage by collimated sputtering or application of a bias to the wafer. Figure 12.24 In collimated sputtering a disposable collimator is placed close to the wafers to increase directionality. Figure 12.26 In bias sputtering, the ions incident on the surface of the wafer redistribute the deposited film to improve step coverage.
Page 1 and 2: Chapter 12 Physical Vapor Depositio
Page 3 and 4: Evaporation Process: *Chamber under
Page 5 and 6: Deposition rate depends on position
Page 7 and 8: Evaporator systems: crucible heatin
Page 9 and 10: Evaporator systems: crucible heatin
Page 11 and 12: Evaporation of Alloys Figure 12.11
Page 13 and 14: Basic steps in sputter deposition:
Page 15 and 16: Sputter Yield (S) Determines rate o
Page 17 and 18: Magnetron Sputtering - a magnetic f
Page 19: Film morphology Zone model (Zones 1
Page 23 and 24: Reactive sputtering: use of reactiv
Page 25 and 26: A thin film deposited on a substrat

Chapter 12 Physical Vapor Deposition (PVD)

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