Chapter 12 Physical Vapor Deposition (PVD)

Chapter 12 Physical Vapor Deposition (PVD) Chapter 12 Physical Vapor Deposition (PVD)

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S versus Ion atomic number Figure 12.15 Sputter yield as a function of the bombarding ion atomic number for 45-keV ions incident on silver, copper, and tantalum targets (after Wehner, reprinted by permission, AIP).

Magnetron Sputtering – a magnetic field applied at right angles to the E-field; causes e- to follow spiral paths, increases probability of ionizing a gas atom, increases ionization efficiency, confines plasma resulting in a higher deposition rate; also able to form plasma at lower chamber pressures Figure 12.17 Planar and cylindrical magnetron sputtering systems T: target; P: plasma; SM: solenoid; M: magnet; E: electric field; B: magnetic field (after Wasa and Hayakawa, reprinted by permission, Noyes Publications).

Magnetron Sputtering – a magnetic field applied at right angles to<br />

the E-field; causes e- to follow spiral paths, increases probability of<br />

ionizing a gas atom, increases ionization efficiency, confines<br />

plasma resulting in a higher deposition rate; also able to form<br />

plasma at lower chamber pressures<br />

Figure <strong>12</strong>.17 Planar and cylindrical magnetron sputtering systems T: target; P:<br />

plasma; SM: solenoid; M: magnet; E: electric field; B: magnetic field (after<br />

Wasa and Hayakawa, reprinted by permission, Noyes Publications).

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