Chapter 12 Physical Vapor Deposition (PVD)

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S versus Ion atomic number Figure <strong>12</strong>.15 Sputter yield as a function of the bombarding ion atomic number for 45-keV ions incident on silver, copper, and tantalum targets (after Wehner, reprinted by permission, AIP).
Magnetron Sputtering – a magnetic field applied at right angles to the E-field; causes e- to follow spiral paths, increases probability of ionizing a gas atom, increases ionization efficiency, confines plasma resulting in a higher deposition rate; also able to form plasma at lower chamber pressures Figure <strong>12</strong>.17 Planar and cylindrical magnetron sputtering systems T: target; P: plasma; SM: solenoid; M: magnet; E: electric field; B: magnetic field (after Wasa and Hayakawa, reprinted by permission, Noyes Publications).
Page 1 and 2: Chapter 12 Physical Vapor Depositio
Page 3 and 4: Evaporation Process: *Chamber under
Page 5 and 6: Deposition rate depends on position
Page 7 and 8: Evaporator systems: crucible heatin
Page 9 and 10: Evaporator systems: crucible heatin
Page 11 and 12: Evaporation of Alloys Figure 12.11
Page 13 and 14: Basic steps in sputter deposition:
Page 15: Sputter Yield (S) Determines rate o
Page 19 and 20: Film morphology Zone model (Zones 1
Page 21 and 22: Can improve step coverage by collim
Page 23 and 24: Reactive sputtering: use of reactiv
Page 25 and 26: A thin film deposited on a substrat

Chapter 12 Physical Vapor Deposition (PVD)

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