Chapter 12 Physical Vapor Deposition (PVD)
Chapter 12 Physical Vapor Deposition (PVD)
Chapter 12 Physical Vapor Deposition (PVD)
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Sputtering:<br />
Bombard the target (cathode) with energetic ions, usually Ar + , in a<br />
plasma. Target material, not the wafers, must be placed on the electrode<br />
with maximum ion flux.<br />
*Chamber base pressure - high<br />
vacuum,<br />
*Argon flows into chamber<br />
raising pressure to mTorr range,<br />
*power supplied to electrodes,<br />
*target material deposits on the<br />
wafers.<br />
Allows deposition of refractory<br />
metals, alloys, dielectrics if an RF<br />
system is used.<br />
Figure <strong>12</strong>.<strong>12</strong> Chamber for a simple parallel-plateplate<br />
sputtering system.
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