Power Transistor Arrays Catalog (PDF, 3.2 MB) - IBS Electronics

Bulletin No
T07 EB0
(Mar.,2001)

CAUTION / WARNING
• The information in this publication has been carefully checked and is believed to be accurate;
however, no responsibility is assumed for inaccuracies.
• Sanken reserves the right to make changes without further notice to any products herein in the
interest of improvements in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant
information to verify that the information being relied upon is current.
• Application and operation examples described in this catalog are quoted for the sole purpose of
reference for the use of the products herein and Sanken can assume no responsibility for any
infringement of industrial property rights, intellectual property rights or any other rights of Sanken
or any third party which may result from its use.
• When using the products herein, the applicability and suitability of such products for the intended
purpose or object shall be reviewed at the users’ responsibility.
• Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence
of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken
products are requested to take, at their own risk, preventative measures including safety design
of the equipment or systems against any possible injury, death, fires or damages to the society
due to device failure or malfunction.
• Sanken products listed in this catalog are designed and intended for the use as components in
general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication
equipment, measuring equipment, etc.). Before placing an order, the user’s
written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is
required (transportation equipment and its control systems, traffic signal control systems or
equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest
Sanken sales representative to discuss and obtain written confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in the applications where
extremely high reliability is required (aerospace equipment, nuclear power control systems, life
support systems, etc.) is strictly prohibited.
• Anti radioactive ray design is not considered for the products listed herein.
• This publication shall not be reproduced in whole or in part without prior written approval from
Sanken.
Ordering
Specify the number of standard minimum packaged units when placing an order.
Standard minimum packaged unit
Package Type
Series
Cardboard Box Stick Reel
SLA 50 108
SMA 120 108
STA300 100
STA400 80
STA500 110
SDK 1200

Contents
Product index by Part Number.................................................... 2
Product index by function (Sink Driver) ......................................... 4
Product index by function (Source Driver)...................................... 6
Product index by function (Motor Driver) ....................................... 8
Product index by applications.................................................. 10
Storage, characteristic inspection, and handling precautions ........... 13
Avalanche energy capability of MOSFET array .............................. 14
Transistor array with built-in avalanche diode .............................. 16
Switching time measurement .................................................. 16
External dimensions ............................................................. 17
SLA packages ..................................................................... 18
SMA packages ................................................................... 122
STA packages .................................................................... 152
SD packages (surface mount) ................................................. 191
1

2
Product index by Part Number
Part Number Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Package Page
SDA01 Source driver 4 –60 –1.5 2000 SMD 16-pin 191
SDA05 3–phase motor driver 3 –60 –4 2000 SMD 16-pin 192
SDC01 Sink driver 4 50 2 1000 SMD 16-pin 193
SDC03 Sink driver 4 60±10 1.5 2000 SMD 16-pin 194
SDC04 Sink driver 4 100±15 1.5 2000 SMD 16-pin 195
SDC06 Sink driver 4 30 to 45 2 400 SMD 16-pin 196
SDC07 3–phase motor driver 3 60 4 2000 SMD 16-pin 197
SDH02 Sink driver 4 100 1.5 2000 SMD 16-pin 198
SDH03 H–bridge driver 4 +100/–60 ±1.5 2000 SMD 16-pin 200
SDK02 Sink driver 4 60 2 0.24 SMD 16-pin 202
SDK04 Sink driver 4 100 2 0.8 SMD 16-pin 203
SLA4010 Sink driver 4 60±10 4 2000 SIP 12-pin with fin 18
SLA4030 Sink driver 4 100 4 2000 SIP 12-pin with fin 19
SLA4031 Sink driver 4 120 4 2000 SIP 12-pin with fin 20
SLA4041 Sink driver 4 200 3 1000 SIP 12-pin with fin 21
SLA4060 Sink driver 4 120 5 2000 SIP 12-pin with fin 22
SLA4061 Sink driver 4 120 5 2000 SIP 12-pin with fin 23
SLA4070 Source driver 4 –100 –5 1000 SIP 12-pin with fin 24
SLA4071 Source driver 4 –100 –5 2000 SIP 12-pin with fin 25
SLA4310 H–bridge driver 4 ±60 ±4 80 SIP 12-pin with fin 26
SLA4340 H–bridge driver 4 ±60 ±4 2000 SIP 12-pin with fin 28
SLA4390 H–bridge driver 4 ±100 ±5 2000 SIP 12-pin with fin 30
SLA4391 H–bridge driver 4 ±100 ±5 1000 SIP 12-pin with fin 32
SLA5001 Sink driver 4 100 5 0.3 SIP 12-pin with fin 34
SLA5002 Sink driver 4 100 5 0.3 SIP 12-pin with fin 35
SLA5003 Sink driver 4 200 5 0.9 SIP 12-pin with fin 36
SLA5004 Source driver 4 –60 –5 0.3 SIP 12-pin with fin 37
SLA5005 Source driver 4 –100 –5 0.7 SIP 12-pin with fin 38
SLA5006 Source driver 4 –100 –5 0.7 SIP 12-pin with fin 39
SLA5007 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 40
SLA5008 H–bridge driver 4 ±100 +4/–3 0.6/1.3 SIP 12-pin with fin 42
SLA5009 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 44
SLA5010 3–phase motor driver 6 ±100 +4/–3 0.6/1.3 SIP 12-pin with fin 46
SLA5011 Sink driver 5 60 5 0.22 SIP 12-pin with fin 48
SLA5012 Source driver 5 –60 –5 0.3 SIP 12-pin with fin 49
SLA5013 H–bridge driver 4 ±100 ±5 0.3/0.7 SIP 12-pin with fin 50
SLA5015 Source driver 5 –60 –4 0.55 SIP 12-pin with fin 52
SLA5017 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 54
SLA5018 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 56
SLA5021 Sink driver 5 100 5 0.19 SIP 12-pin with fin 58
SLA5022 3–phase motor driver 6 ±60 ±6 2000 0.22 SIP 12-pin with fin 60
SLA5023 3–phase motor driver 6 ±100 ±6 2000 0.55 SIP 12-pin with fin 62
SLA5024 Source driver 4 –60 –4 0.55 SIP 12-pin with fin 64
SLA5029 Sink driver 5 60 4 0.45 SIP 12-pin with fin 65
SLA5031 Sink driver 4 60 5 0.3 SIP 12-pin with fin 66
SLA5037 Sink driver 4 100 10 0.08 SIP 12-pin with fin 67
SLA5040 Sink driver 4 100 4 0.6 SIP 12-pin with fin 68
SLA5041 Sink driver 4 200 10 0.175 SIP 12-pin with fin 69
SLA5042 Sink driver 5 100 5 0.185 SIP 12-pin with fin 70
SLA5044 Sink driver 4 250 10 0.25 SIP 12-pin with fin 71
SLA5046 Sink driver 5 200 7 0.35 SIP 12-pin with fin 72
SLA5047 Sink driver 4 150 10 0.085 SIP 12-pin with fin 73
SLA5049 Sink driver 5 250 7 0.5 SIP 12-pin with fin 74
SLA5052 Sink driver 4 150 10 0.115 SIP 12-pin with fin 75
SLA5054 Sink driver 6 150 ±7/±5/±7 0.105/0.44/0.2 SIP 15-pin with fin 76
SLA5055 Sink driver 5 150 ±5/±7 0.44/0.2 SIP 12-pin with fin 78
SLA5057 Sink driver 6 200 ±7/±7 0.175/0.35 SIP 15-pin with fin 80
SLA5058 Sink driver 5 150 ±7 0.2 SIP 12-pin with fin 81
SLA5059 3–phase motor driver 6 60 ±4 0.55 SIP 12-pin with fin 82
SLA5060 3–phase motor driver 6 60 ±6 0.22 SIP 12-pin with fin 84
SLA5061 3–phase motor driver 6 60 ±10 0.14 SIP 12-pin with fin 86
SLA5064 3–phase motor driver 6 60 ±10 0.14 SIP 12-pin with fin 88
SLA5065 5–phase motor driver 4 60 7 0.1 SIP 15-pin with fin 90
SLA5068 5–phase motor driver 6 60 7 0.1 SIP 15-pin with fin 91
SLA5070 Sink driver 6 150 ±7/±7 0.105/0.2 SIP 15-pin with fin 92
SLA5072 3–phase motor driver 6 250 7 0.5 SIP 15-pin with fin 94
SLA5073 5–phase motor driver 6 60 5 0.3 SIP 15-pin with fin 95
SLA5074 5–phase motor driver 4 60 5 0.3 SIP 15-pin with fin 96
SLA5075 3–phase motor driver 6 500 ±5 1.4 SIP 15-pin with fin 97
SLA5077 Sink driver 4 150 ±10 0.2 SIP 12-pin with fin 98
SLA5079 3–phase motor driver 3 –60 –10 0.14 SIP 12-pin with fin 99

Part Number Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Package Page
SLA5080 3–phase motor driver 3 60 10 0.14 SIP 12-pin with fin 100
SLA5081 Sink driver 5 150 ±7/±7 0.105/0.2 SIP 15-pin with fin 102
SLA5085 Sink driver 5 60 5 0.22 SIP 12-pin with fin 104
SLA5086 Source driver 5 –60 –5 0.22 SIP 12-pin with fin 105
SLA5088 Sink driver 5 150 ±5/±7 0.44/0.2 SIP 15-pin with fin 106
SLA6012 3–phase motor driver 6 ±60 ±4 2000 SIP 12-pin with fin 108
SLA6020 3–phase motor driver 6 ±100 ±5 2000 SIP 12-pin with fin 110
SLA6022 3–phase motor driver 6 ±80 ±5 2000 SIP 12-pin with fin 112
SLA6023 3–phase motor driver 6 ±60 ±6 2000 SIP 12-pin with fin 114
SLA6024 3–phase motor driver 6 ±60 ±8 2000 SIP 12-pin with fin 116
SLA6026 3–phase motor driver 6 ±60 ±10 2000 SIP 12-pin with fin 118
SLA8001 H–bridge 4 ±60 ±12 50 SIP 12-pin with fin 120
SMA4020 Source driver 4 –60 –4 2000 SIP 12-pin 122
SMA4021 Source driver 4 –60 –3 2000 SIP 12-pin 123
SMA4030 Sink driver 4 100 3 2000 SIP 12-pin 124
SMA4032 Sink driver 4 100 3 2000 SIP 12-pin 125
SMA4033 Sink driver 4 100 2 2000 SIP 12-pin 126
SMA5101 Sink driver 4 100 4 0.6 SIP 12-pin 127
SMA5102 Sink driver 4 100 4 0.6 SIP 12-pin 128
SMA5103 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin 130
SMA5104 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin 132
SMA5105 Sink driver 4 100 5 0.3 SIP 12-pin 134
SMA5106 Sink driver 4 100 4 0.55 SIP 12-pin 135
SMA5112 3–phase motor driver 6 250 7 0.5 SIP 12-pin 136
SMA5114 Sink driver 4 60 3 0.25 SIP 12-pin 137
SMA5117 3–phase motor driver 6 250 7 0.25 SIP 12-pin 138
SMA5118 3–phase motor driver 6 500 ±5 1.4 SIP 12-pin 139
SMA5125 3–phase motor driver 6 ±60 ±10 0.14 SIP 12-pin 140
SMA5127 3–phase motor driver 6 ±60 ±4 0.55 SIP 12-pin 142
SMA6010 3–phase motor driver 6 ±60 ±4 2000 SIP 12-pin 144
SMA6014 3–phase motor driver 6 ±60 ±2 1500/2000 SIP 12-pin 146
SMA6511
Stepper motor driverr with
Dual Supply Voltage Switch
5 100±15/–60 1.5/–3 2000 SIP 12-pin 148
SMA6512
Stepper motor driverr with
Dual Supply Voltage Switch
5 60±10/–60 1.5/–3 2000 SIP 12-pin 150
STA301A Sink driver 3 60±10 4 1000 SIP 8-pin 152
STA302A Source driver 3 –50 –4 1000 SIP 8-pin 153
STA302A 3–phase motor driver 3 –50 –4 1000 SIP 8-pin 153
STA303A Sink driver 3 100 4 1000 SIP 8-pin 154
STA303A 3–phase motor driver 3 100 4 1000 SIP 8-pin 154
STA304A 3–phase motor driver 3 550 1 200 SIP 8-pin 155
STA305A 3–phase motor driver 3 –550 –1 200 SIP 8-pin 156
STA308A Source driver 3 –120 –4 2000 SIP 8-pin 157
STA312A Sink driver 3 60 3 300 SIP 8-pin 158
STA322A Source driver 3 –50 –3 100 SIP 8-pin 159
STA371A Sink driver 3 60±10 2 2000 SIP 8-pin 160
STA401A Sink driver 4 60±10 4 1000 SIP 10-pin 161
STA402A Source driver 4 –50 –4 1000 SIP 10-pin 162
STA403A Sink driver 4 100 4 1000 SIP 10-pin 163
STA404A Sink driver 4 200 3 1000 SIP 10-pin 164
STA406A Sink driver 4 60±10 6 2000 SIP 10-pin 165
STA408A Source driver 4 –120 –4 2000 SIP 10-pin 166
STA412A Sink driver 4 60 3 300 SIP 10-pin 167
STA413A Sink driver 4 35±5 3 500 SIP 10-pin 168
STA421A Source driver 4 –60 –3 40 SIP 10-pin 169
STA431A H–bridge driver 4 ±60 ±3 40 SIP 10-pin 170
STA434A H–bridge driver 4 ±60 ±4 1000 SIP 10-pin 172
STA435A Sink driver 4 65±15 4 1000 SIP 10-pin 174
STA457C H–bridge driver 4 ±60 ±4 2000 SIP 10-pin 176
STA458C H–bridge driver 4 ±30 ±5 40 SIP 10-pin 178
STA460C Sink driver 2 60±10 6 700 SIP 10-pin 180
STA471A Sink driver 4 60±10 2 2000 SIP 10-pin 181
STA472A Source driver 4 –60 –2 2000 SIP 10-pin 182
STA473A Sink driver 4 100 2 2000 SIP 10-pin 183
STA475A Sink driver 4 100±15 2 2000 SIP 10-pin 184
STA481A Sink driver 4 60±10 1 2000 SIP 10-pin 185
STA485A Sink driver 4 100±15 1 2000 SIP 10-pin 186
STA501A Sink driver 4 60 5 0.2 SIP 10-pin 187
STA504A Sink driver 4 60 4 0.45 SIP 10-pin 188
STA505A Sink driver 4 100 3 0.6 SIP 10-pin 189
STA506A Sink driver 4 100 2 0.8 SIP 10-pin 190
3

Product index by function Sink driver
●With built-in avalanche diode between collector and base
Part Number Number of chips VCEO (V) IC (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
STA460C 2 60±10 6 700 1 SIP 10-pin 180
STA371A 3 60±10 2 2000 2 SIP 8-pin 160
STA301A 3 60±10 4 1000 2 SIP 8-pin 152
SDC06 4 30 to 45 2 400 3 SMD 16-pin 196
STA413A 4 35±5 3 500 4 SIP 10-pin 168
STA481A 4 60±10 1 2000 5 SIP 10-pin 185
SDC03 4 60±10 1.5 2000 6 SMD 16-pin 194
STA471A 4 60±10 2 2000 5 SIP 10-pin 181
STA401A 4 60±10 4 1000 5 SIP 10-pin 161
SLA4010 4 60±10 4 2000 6 SIP 12-pin with fin 18
STA406A 4 60±10 6 2000 5 SIP 10-pin 165
STA435A 4 65±15 4 1000 7 SIP 10-pin 174
STA485A 4 100±15 1 2000 5 SIP 10-pin 186
SDC04 4 100±15 1.5 2000 6 SMD 16-pin 195
STA475A 4 100±15 2 2000 5 SIP 10-pin 184
●With built-in flywheel diode
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
SDK02 4 60 2 0.24 8 SMD 16-pin 202
SMA5114 4 60 3 0.25 9 SIP 12-pin 137
SLA5031 4 60 5 0.3 10 SIP 12-pin with fin 66
SDH02 4 100 1.5 2000 11 SMD 16-pin 198
SMA4033 4 100 2 2000 12 SIP 12-pin 126
SMA4032 4 100 3 2000 12 SIP 12-pin 125
SLA5040 4 100 4 0.6 10 SIP 12-pin with fin 68
SMA5102 4 100 4 0.6 10 SIP 12-pin 128
SMA5106 4 100 4 0.55 10 SIP 12-pin 135
SLA5002 4 100 5 0.3 10 SIP 12-pin with fin 35
SMA5105 4 100 5 0.3 10 SIP 12-pin 134
SLA4031 4 120 4 2000 12 SIP 12-pin with fin 20
SLA4061 4 120 5 2000 12 SIP 12-pin with fin 23
SLA4041 4 200 3 1000 12 SIP 12-pin with fin 21
SLA5003 4 200 5 0.9 10 SIP 12-pin with fin 36
●General purpose
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
STA312A 3 60 3 300 13 SIP 8-pin 158
STA303A 3 100 4 100 14 SIP 8-pin 154
SDC01 4 50 2 1000 15 SMD 16-pin 193
STA412A 4 60 3 300 16 SIP 10-pin 167
STA504A 4 60 4 0.45 17 SIP 10-pin 188
STA501A 4 60 5 0.2 18 SIP 10-pin 187
STA473A 4 100 2 2000 19 SIP 10-pin 183
STA506A 4 100 2 0.8 18 SIP 10-pin 190
SDK04 4 100 2 0.8 20 SMD 16-pin 203
SMA4030 4 100 3 2000 21 SIP 12-pin 124
STA505A 4 100 3 0.6 18 SIP 10-pin 189
STA403A 4 100 4 1000 19 SIP 10-pin 163
SLA4030 4 100 4 2000 21 SIP 12-pin with fin 19
SMA5101 4 100 4 0.6 20 SIP 12-pin 127
SLA5001 4 100 5 0.3 20 SIP 12-pin with fin 34
SLA5037 4 100 10 0.08 20 SIP 12-pin with fin 67
SLA4060 4 120 5 2000 21 SIP 12-pin with fin 22
SLA5047 4 150 10 0.085 20 SIP 12-pin with fin 73
SLA5052 4 150 10 0.115 20 SIP 12-pin with fin 75
STA404A 4 200 3 1000 19 SIP 10-pin 164
SLA5041 4 200 10 0.175 20 SIP 12-pin with fin 69
SLA5044 4 250 10 0.25 20 SIP 12-pin with fin 71
SLA5029 5 60 4 0.45 22 SIP 12-pin with fin 65
SLA5011 5 60 5 0.22 22 SIP 12-pin with fin 48
SLA5085 5 60 5 0.22 22 SIP 12-pin with fin 104
SLA5021 5 100 5 0.19 22 SIP 12-pin with fin 58
SLA5042 5 100 5 0.185 22 SIP 12-pin with fin 70
SLA5055 5 150 ±5/±7 0.44/0.2 22 SIP 12-pin with fin 78
SLA5088 5 150 ±5/±7 0.44/0.2 22 SIP 15-pin with fin 106
SLA5058 5 150 ±7 0.2 22 SIP 12-pin with fin 81
SLA5081 5 150 ±7/±7 0.105/0.2 22 SIP 15-pin with fin 102
SLA5046 5 200 7 0.35 22 SIP 12-pin with fin 72
SLA5049 5 250 7 0.5 22 SIP 12-pin with fin 74
SLA5054 6 150 ±7/±5/±7 0.105/0.44/0.2 23 SIP 15-pin with fin 76
SLA5070 6 150 ±7/±7 0.105/0.2 23 SIP 15-pin with fin 92
SLA5057 6 200 ±7/±7 0.175/0.35 23 SIP 15-pin with fin 80
4

●Equivalent circuit (Sink driver)
1
9
2
3
4
9
10
11
G
1
5
8
12
2
0
6
7
H
3
A
I
4
B
J
5
C
K
6
D
L
7
E
M
8
F
5

Product index by function
Source driver
●With built-in flywheel diode
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
SMA4021 4 –60 –3 2000 1 SIP 12-pin 123
SLA4071 4 –100 –5 2000 1 SIP 12-pin with fin 25
SLA5006 4 –100 –5 0.7 2 SIP 12-pin with fin 39
●General purpose
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
STA322A 3 –50 –3 100 3 SIP 8-pin 159
STA302A 3 –50 –4 1000 4 SIP 8-pin 153
STA308A 3 –120 –4 2000 4 SIP 8-pin 157
STA402A 4 –50 –4 1000 5 SIP 10-pin 162
SDA01 4 –60 –1.5 2000 6 SMD 16-pin 191
STA472A 4 –60 –2 2000 5 SIP 10-pin 182
STA421A 4 –60 –3 40 7 SIP 10-pin 169
SMA4020 4 –60 –4 2000 6 SIP 12-pin 122
SLA5024 4 –60 –4 0.55 8 SIP 12-pin with fin 64
SLA5004 4 –60 –5 0.3 8 SIP 12-pin with fin 37
SLA4070 4 –100 –5 1000 6 SIP 12-pin with fin 24
SLA5005 4 –100 –5 0.7 8 SIP 12-pin with fin 38
STA408A 4 –120 –4 2000 9 SIP 10-Pin 166
SLA5015 5 –60 –4 0.55 10 SIP 12-pin with fin 52
SLA5012 5 –60 –5 0.3 10 SIP 12-pin with fin 49
SLA5086 5 –60 –5 0.22 10 SIP 12-pin with fin 105
6

●Equivalent circuit (Source driver)
1
6
2
7
3
8
4
9
5
0
7

Product index by function
Motor driver
●H-bridge driver
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
STA458C 4 ±30 ±5 40 1 SIP 10-pin 178
STA431A 4 ±60 ±3 40 2 SIP 10-pin 170
STA434A 4 ±60 ±4 1000 3 SIP 10Pin 172
STA457C 4 ±60 ±4 2000 4 SIP 10-pin 176
SLA4310 4 ±60 ±4 80 5 SIP 12-pin with fin 26
SLA4340 4 ±60 ±4 2000 3 SIP 12-pin with fin 28
SLA5007 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin with fin 40
SLA5018 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin with fin 56
SMA5103 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin 130
SLA8001 4 ±60 ±12 50 1 SIP 12-pin with fin 120
SDH03 4 ±100/–60 ±1.5 2000 7 SMD 16-pin 200
SLA5008 4 ±100 +4/–3 0.6/1.3 6 SIP 12-pin with fin 42
SLA4390 4 ±100 ±5 2000 3 SIP 12-pin with fin 30
SLA4391 4 ±100 ±5 1000 8 SIP 12-pin with fin 32
SLA5013 4 ±100 ±5 0.3/0.7 6 SIP 12-pin with fin 50
●3-phase motor driver
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
SDC07 3 60 4 2000 9 SMD 16-pin 197
SLA5080 3 60 10 0.14 10 SIP 12-pin with fin 100
STA303A 3 100 4 1000 11 SIP 8-pin 154
STA304A 3 550 1 200 12 SIP 8-pin 155
STA302A 3 –50 –4 1000 13 SIP 8-pin 153
SDA05 3 –60 –4 2000 14 SMD 16-pin 192
SLA5079 3 –60 –10 0.14 15 SIP 12-pin with fin 99
STA305A 3 –550 –1 200 16 SIP 8-pin 156
SLA5059 6 60 ±4 0.55 17 SIP 12-pin with fin 82
SLA5060 6 60 ±6 0.22 17 SIP 12-pin with fin 84
SLA5061 6 60 ±10 0.14 17 SIP 12-pin with fin 86
SLA5064 6 60 ±10 0.14 18 SIP 12-pin with fin 88
SMA6014 6 ±60 ±2 1500/2000 19 SIP 12-pin 146
SMA6010 6 ±60 ±4 2000 20 SIP 12-pin 144
SLA6012 6 ±60 ±4 2000 19 SIP 12-pin with fin 108
SMA5127 6 ±60 ±4 0.55 21 SIP 12-pin 142
SLA5009 6 ±60 +5/–4 0.22/0.55 21 SIP 12-pin with fin 44
SLA5017 6 ±60 +5/–4 0.22/0.55 21 SIP 12-pin with fin 54
SMA5104 6 ±60 +5/–4 0.22/0.55 21 SIP 12-pin 132
SLA5022 6 ±60 ±6 2000 0.22 22 SIP 12-pin with fin 60
SLA6023 6 ±60 ±6 2000 19 SIP 12-pin with fin 114
SLA6024 6 ±60 ±8 2000 19 SIP 12-pin with fin 116
SLA6026 6 ±60 ±10 2000 19 SIP 12-pin with fin 118
SMA5125 6 ±60 ±10 0.14 18 SIP 12-pin 140
SLA6022 6 ±80 ±5 2000 19 SIP 12-pin with fin 112
SLA5010 6 ±100 +4/–3 0.6/1.3 21 SIP 12-pin with fin 46
SLA6020 6 ±100 ±5 2000 20 SIP 12-pin with fin 110
SLA5023 6 ±100 ±6 2000 0.55 22 SIP 12-pin with fin 62
SLA5072 6 250 7 0.5 23 SIP 15-pin with fin 94
SMA5112 6 250 7 0.5 24 SIP 12-pin 136
SMA5117 6 250 7 0.25 24 SIP 12-pin 138
SLA5075 6 500 ±5 1.4 23 SIP 15-pin with fin 97
SMA5118 6 500 ±5 1.4 24 SIP 12-pin 139
●Stepper motor driver with dual supply voltage switch
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
SMA6511 5 100±15/–60 1.5/–3 2000 25 SIP 12-pin 148
SMA6512 5 60±10/–60 1.5/–3 2000 25 SIP 12-pin 150
●5-phase motor driver
Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
SLA5074 4 60 5 0.3 26 SIP 15-pin with fin 96
SLA5065 4 60 7 0.1 26 SIP 15-pin with fin 90
SLA5073 6 60 5 0.3 27 SIP 15-pin with fin 95
SLA5068 6 60 7 0.1 28 SIP 15-pin with fin 91
8

●Equivalent circuit (Motor driver)
1
0
J
2
A
K
3
B
L
4
C
M
D
N
5
E
O
6
F
P
7
G
Q
8
H
R
9
I
9

Product index by applications
Product type
Application
Typical circuit example
Transistor
Darlington Single
MOSFET
●Solenoid
●Relay
STA301A
STA371A
STA401A
STA406A
STA435A
STA471A
STA475A
STA481A
STA485A
STA4010
SDC04
SDC03
SLA4031
SLA4041
SLA4060
SMA4032
SMA4033
SDH02
SLA4071
SMA4021
STA460C
STA413A
SDC06
SLA5002
SLA5003
SLA5031
SLA5040
SMA5102
SMA5105
SMA5106
SMA5114
SDK02
SLA5006
STA302A STA322A SLA5004
STA308A STA421A SLA5005
STA402A
SLA5024
STA408A
STA472A
SLA4070
SMA4020
SDA01
10

Product type
Application
Typical circuit example
Transistor
Darlington Single
MOSFET
●DC motor
Forward-reverse
control
STA434A
STA457C
SLA4340
STA4390
SDH03
STA431A
STA458C
SLA4310
SLA8001
PWM control
SLA4391
SLA5007
SLA5008
SLA5013
SLA5018
SMA5103
●3-phase DC
brushless
motor
STA302A+STA303A
SMA6010
SLA6020
SDA05+SDC07
100V AC direct drive
200V AC direct drive
SLA5072
SLA5075
SMA5112
SMA5117
SMA5118
200V AC direct drive
STA304A+STA305A
PWM control
SLA6012
SLA6022
SLA6023
SLA6024
SLA6026
SMA6014
SLA5022
SLA5023
SLA5009
SLA5010
SLA5017
SLA5059
SLA5060
SLA5061
SLA5064
SLA5079+SLA5080
SMA5104
SMA5125
SMA5127
11

Product index by applications
Product type
Application
Typical circuit example
Transistor
Darlington Single
MOSFET
●Stepper
motor
Constant voltage
drive
Dual supply voltage
drive
STA401A
STA406A
STA435A
STA471A
STA475A
STA481A
STA485A
SLA4010
SDC04
SDC03
SMA6511
SMA6512
STA460C
STA413A
SDC06
Bipolar drive
STA473A STA421A STA506A
STA472A STA412A STA505A
STA408A SDC01 STA504A
STA404A
STA501A
STA403A
SMA5101
STA402A
SLA5024
SMA4030
SLA5005
SMA4020
SLA5004
SLA4070
SLA5001
SLA4060
SLA4030
SDA01
Application
Typical circuit example
N–CH
Product type
P–CH
●5-phase
motor
SLA5011
SLA5029
SLA5065+SLA5068
SLA5073+SLA5074
SLA5085
SLA5012
SLA5015
SLA5086
Application
●"S" shape
correction
switch
Typical circuit example
Product type
100V 150V 200V 250V
SLA5021 SLA5047 SLA5041 SLA5044
SLA5037 SLA5052 SLA5046 SLA5049
SLA5042 SLA5054 SLA5057
SLA5055
SLA5058
SLA5070
SLA5077
SLA5081
SLA5088
12

Storage, characteristic inspection, and handling precautions
Inappropriate storage, characteristic inspection, or handling
may impair the reliability of the device. To ensure high reliability,
observe the following precautions:
1. Storage precautions
● It is recommended to store the device at room temperature
(between 5 and 35°C) and relative humidity of 40 to 75%.
Avoid storing the device in a place where the temperature or
humidity is high or changes greatly.
● Store the device in a clean place that is not exposed to direct
sunlight, and is free from corrosive or harmful gases.
● If the device is stored for a long time, check the solderability
and lead condition before using the device.
2. Precautions on characteristic inspections
When carrying out characteristic inspections on receiving
products or other occasions, take care to avoid applying a surge
voltage from the measuring equipment and check the terminals
of the measuring equipment for a short circuit or wiring
errors. Measure the device within the range of its rated values.
3. Silicone Grease
When attaching a heatsink, apply a small amount of silicone
evenly to the back of the device and both sides of the insulator
to reduce the thermal resistance between the device and
heatsink.
Recommended silicone grease
●G746
●YG6260
●SC102
SHINETSU SILICONE CO., LTD.
GE TOSHIBA SILICONE CO., LTD.
DOW CORNING TORAY SILICONE CO., LTD.
Please select a silicone grease carefully since the oil in
some grease can penetrate the product, which will result
in an extremely short product life.
5. Soldering temperature
If soldering is necessary, take care to keep the application of
heat as brief as possible, and within the following limits:
260±5°C for 10 s max
350°C for 3 s max (soldering iron)
6. Heatsink
A large contact area between the device and the heatsink for
effective heat radiation is required. To ensure a large contact
area, minimize mounting holes and select a heatsink with a
sufficiently smooth surface and that is free from burring or metal
debris.
7. Handling precautions to protect power
MOSFET arrays from static damage
● When handling the device, physical grounding is necessary.
Wear a wrist strap with a 1 MΩ resistor close to the body in
the wrist strap to prevent electric shock.
● Use a conductive tablemat or floor mat at the device handling
workbench and to ensure grounding.
● When using a curve tracer or other measuring equipment,
ground the equipment as well.
● When soldering, ground the bit of the soldering iron and the
dip tank to prevent a leakage voltage from damaging the
device.
● Store the device in the shipping container or a conductive
container or use aluminum foil to protect the device from
static electricity.
4. Screw tightening torque
If screws are not tightened with sufficient torque, this can increase
the thermal resistance and reduce the radiation effect.
Tightening screws with too great a torque damage the screw
thread, deform the heatsink, or twist the device frame until it is
damaged. Therefore, tighten screws with a torque between
0.588 and 0.784 N • m (6 to 8 kgf • cm).
13

Avalanche energy capability of MOSFET array
Sanken MOSFETs feature guaranteed
avalanche energy capability.
1. What is avalanche energy capability
When a MOSFET is used for high-speed switching, the inductive
load and wiring inductance may cause a counter electromotive
voltage at cutoff that the device cannot withstand.
Avalanche energy capability is the non-clamped ability to withstand
damage expressed as energy. As long as the energy
applied to the device at cutoff is within the guaranteed avalanche
energy capability, the device will not be damaged even
if the drain-source voltage exceeds the capability.
For example, a drain-source voltage that is within the guaranteed
capability when electrically stationary may exceed the limit
at startup or cutoff. Usually, a snubber circuit or similar surge
absorbing circuit is used to keep the drain-source voltage within
the guaranteed capability. Sanken MOSFETs, however, do not
require this kind of protective circuit because the avalanche
energy capability is guaranteed. Sanken MOSFETs enable
the number of parts to be reduced, saving board area.
* Consult the engineering department of Sanken when planning
to use MOSFETs in avalanche mode.
2. EAS calculation method
If the current in an inductive load L is ILP at the moment when
the MOSFET is cut off, EAS can be expressed as follows:
EAS =
1
• L • ILP 2 VDSS
• .......................................1
2
VDSS – VDD
*VDD : Supply voltage
If the value of L is not known in an actual circuit, EAS can
also be calculated from the actual voltage and current waveforms
as follows:
EAS = PS • t ..................................................................... 2
*PS : Surge power *t : Surge time
The following calculation is used to determine EAS where the
voltage and current shown in Fig. A are applied to the MOSFET
in a circuit
Integrate the overlapping section of ID and VDS to calculate
∫ID • VDS • dt. When the ID waveform is triangular, EAS will be as
follows:
1
EAS = • 10(A) • 550(V) • 10(µs) = 27.5(mJ)
2
Fig. A
0
ID
10A
550V
(VDSS)
550V
(VDSS)
3. Temperature derating for EAS
The EAS value in the specifications is guaranteed when the
channel temperature Tch is 25°C. Since the EAS value drops as
the channel temperature rises, derating depending on the temperature
is necessary.
Fig. B shows the derating curve for single avalanche energy
capability. This is the derating curve of EAS and the channel
temperature (Tch (start)) immediately before the avalanche occurs
in the product, with the EAS value (maximum rating) at
25°C as 100%.
For example, if the product temperature is 50°C, the EAS value
is derated to 64% of the value at 25°C.
Fig. B
EAS(normalized) (%)
EAS – Tch (start)
100
80
60
40
20
ILp = ID max
0 25 50 75 100 125 150
Tch (start) (°C)
4. Continuous avalanche energy capability
This section explains the derating method for continuous avalanche.
Considering continuous avalanche as the repetition of a single
avalanche, the safe operating area (SOA) is determined using
the derating curve shown in Fig. B.
Calculate the energy and Tch (start) of avalanche in the worst
condition and determine SOA using the calculated data and
the derating curve shown in Fig. B. The temperature rise due
to avalanche should not cause the channel temperature to exceed
the maximum rating.
The following is an example of determining SOA judgment by
calculation when a MOSFET enters a transient avalanche state
at power-on then changes to a stationary state
Supposing that the waveform is as shown in Fig. C until the
MOSFET changes to the stationary state, calculate the start
loss and switching (turn-on/off) loss. To simplify the calculation,
the average loss Pa and the last two waveforms are used
for approximation. (Fig. D)
First, calculate the channel temperature Tch (τ) at time (τ)
where the temperature condition is severest.
If the Tch (τ) value is within the maximum rating, there is no
problem as far as the temperature is concerned.
VDS
0
10 µ s
14

Tch(τ) = Ta + Pa • rch–c (Tn + T + t1 + t2 + t3)
+ (P1 – Pa) • rch–c (T + t1 + t2 + t3)
– (P1 – P2) • rch–c (T + t2 + t3)
+ (P3 – P2) • rch–c (T + t3)
– P3 • rch–c (T) + P4 • rch–c (t4 + t5 + t6)
– (P4 – P5) • rch–c (t5 + t6)
+ (P6 – P5) • rch–c (t6) ................................................ 3
*Ta : Ambient temperature
*rch-c (t) : Transient thermal resistance at pulse width t
Then calculate the channel temperature Tch (τl) immediately
before avalanche.
Tch(τ) = Ta + Pa • rch–c (Tn + T’ + t1 + t2 + t3)
+ (P1 – Pa) • rch–c (T’ + t1 + t2 + t3)
– (P1 – P2) • rch–c (T’ + t2 + t3)
+ (P3 – P2) • rch–c (T’ + t3)
– P3 • rch–c (T’) + P4 • rch–c (t4 + t5 + t6)
– (P4 – P5) • rch–c (t5 + t6)
+ (P6 – P5) • rch–c (t6)................................................4
This Tch (τ) value becomes Tch (start). If the avalanche energy
(EAS = P6 • t6) is within the value derated from the guaranteed
EAS value at the temperature, there is no problem as far as the
avalanche energy is concerned.
5. Avalanche energy capability measuring method
Fig. E
VGS
0V
EAS =
1
2
RG
(a) Measuring circuit
• L • ILp 2 •
IL
(b) Output waveform
IL
V(BR)DSS
V(BR)DSS – VDD
ILp
L
VDS
VDD
V(BR)DSS
VDS
VDD
Fig. C
Transient
Stationary
ID
VDS
T(n)
Avalanche in this section
Fig. D
0
Pa
P1
P2
P3
P4
P5
P6
T(n) t1 t2 t3 t4 t5 t6
T
T'
τ1 τ
15

Transistor array with built-in avalanche diode
SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A,
460C, 471A, 475A, 481A, 485A, SDC03, 04, 06
The Darlington transistor chip with a built-in avalanche diode
is a planar type monolithic Darlington transistor chip having
the equivalent circuit shown in the figure on the right. Surge
Voltage can be absorbed by the avalanche diode provided between
the collector and the base. This eliminated the need for
extra components for absorbing surge caused by counter electromotive
force produced by inductive load switch circuits. These
Darlington transistor arrays are ideal for relay drive, solenoid
drive, and printer wire drive applications.
Switching time measurement
1. Transistor array
2. MOS FET array
Fig. 1 PNP
+VBB2
(a) Measuring circuit
Fig. 3 Nch
(a) Measuring circuit
RL
0
0
50 µ s
20 µ s
R2
IB2
IB1
D.U.T
IC
–VCC
VGS
0V
RG
ID
VDS
VDD
R1
–VBB1
RL
GND 0
(b) Input-output waveform
P.W.=10 µ s
Duty cycle≤1%
(b) Input-output waveform
90%
Base
current
Collector
current
0.1IC
0.9IC
IB2
0 0
IB1
IC
0
VGS
VDS
td(on)
tr
td(off) tr
10%
90%
10%
ton
tstg tf
ton
toff
Fig. 2 NPN
Fig. 4 Pch
(a) Measuring circuit
(a) Measuring circuit
+VBB1
RL
0
50 µ s
R1
IB1
IB2
D.U.T
IC
VCC
0V
VGS
RG
ID
VDS
VDD
0
20 µ s
R2
–VBB2
RL
GND 0
P.W.=10 µ s
Duty cycle≤1%
(b) Input-output waveform
(b) Input-output waveform
10%
Base
current
Collector
current
0.9IC
0.1IC
IB2
0 0
IB1
IC
0
VGS
VDS
td(on)
tr
td(off) tr
90%
10%
90%
ton
tstg tf
ton
toff
16

External dimensions (unit: mm)
A SLA (12-pin)
C STA (8-pin)
20.4 max
31.5max
φ 3.2 ±0.15
31.0 ±0.2
9.5min 16.0 ±0.2
13.0 ±0.2
2.7
Pin1
a
24.4 ±0.2 Ellipse3.2 ±0.15 × 3.8 4.8 ±0.2 1.7 ±0.1
b
+0.2
0.85 –0.1
+0.2
1.2 ±0.15 1.45 ±0.15 0.55 –0.1
11 × P2.54 ±0.7 = 27.94 ±1.0
12
Weight : Approx. 6.0g
2.2 ±0.7
a. Part No.
b. Lot No.
4.7 ±0.5 11.3 ±0.2
4.0 ±0.2
1.2 ±0.2
2.5 max
0.5 ±0.15
9.0 ±0.2
1.0 ±0.25 0.5 ±0.15 (2.54)
7 × P2.54=17.78
C1.5 ±0.5
1 2 3 4 5 6 7 8
Pin No.
Weight : Approx. 2.0g
SLA (15-pin)
STA (10-pin)
31.3 ±0.2 4.8 ±0.2 1.7 ±0.1
11.3 ±0.2
2.3 ±0.2
9.0 ±0.2
25.25 ±0.2 b
a
φ 3.2 ±0.15
31.0 ±0.2
φ 3.2 ±0.15 × 3.8
24.4 ±0.2
9.9 ±0.2
13.0 ±0.2
16.0 ±0.2
2.45 ±0.2
4.7 ±0.5
+0.2
0.65 –0.1
16.4 ±0.2 1.15 –0.1
R-End
+0.2
14 × P2.03 ±0.7 =28.42 ±1.0
(3.0) 6.7 ±0.5
+0.2
0.55 –0.1
4.0 ±0.7
+1.0
9.7 –0.5
(2.54)
1.0 ±0.25 0.5 ±0.15
9 × 2.54 = 22.86 ±0.25
C1.5 ±0.5
0.5 ±0.15
1.2 ±0.2
4.0 ±0.2
1 2 3 4 5 6 7 8 9 10 111213 14 15
Weight : Approx. 6.0g
1 2 3 4 5 6 7 8 9 10
Weight : Approx. 2.6g
a. Part No.
b. Lot No.
B SMA
D SD
10.2 ±0.2
(10.4)
2.4
a
31.0 ±0.2
+0.2
2.54 0.85 –0.1
27.94
b
1.46 ±0.15 4.0 ±0.2 2.5 ±0.2
+0.2
0.55 –0.1
a. Part No.
b. Lot No.
1.2 ±0.1
0.89 ±0.15 2.54 ±0.25
+0.15
0.75 –0.05
16
1
8.0 ±0.5
6.3 ±0.2
0~0.1
1.0 ±0.3
9.8 ±0.3
+0.15
0.3 –0.05
4.0max
6.8max
1.4 ±0.2
3.6 ±0.2 0.25
20.0max
19.56 ±0.2
3.0 ±0.2 a
b
9
8
a. Part No.
b. Lot No.
Weight : Approx. 4.0g Weight : Approx. 1.05g
17

SLA4010
NPN Darlington
With built-in avalanche diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 4 A
ICP 6 (PW≤10ms, Du≤50%) A
IB 0.5 A
PT
5 (Ta=25°C)
W
40 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
unit Conditions
ICBO 10 µA VCB=50V
IEBO 10 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 2000 VCE=4V, IC=3A
VCE(sat) 1.5 V IC=3A, IB=10mA
■Equivalent circuit diagram
3
6
7
10
1
4 8 11
R1
R2
2
5
9
12
R1: 3kΩ typ R2: 150Ω typ
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
(VCE=4V)
5
4
3
2
IB=2.0mA
1.0mA
0.8mA
0.6mA
0.5mA
0.4mA
hFE
20000
1000
500
20000
10000
10000
typ
5000
5000
hFE
1000
500
Ta=125°C
25°C
–30°C
1
0.3mA
100
100
0
0 1 2 3 4
VCE (V)
50
0.05 0.1 0.5 1 4
IC (A)
50 0.05 0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000) 3
(VCE=–4V)
2
4
3
VCE (sat) (V)
1
125°C
25°C
Ta=–30°C
VCE (sat) (V)
2
1
IC=2A
IC=3A
IC=4A
IC=1A
IC (A)
2
1
Ta=125°C
75°C
25°C
–30°C
0
0.1
0.5 1 4
IC (A)
0
0.2 0.5 1 5 10 50 100
IB (mA)
0
0 1
VBE (V)
2
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
40
30
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
With Infinite Heatsink
10
5
100ms
10ms
1ms
D.C.TC=25°C
θj–a (°C / W)
5
PT (W)
20
IC (A)
1
0.5
10
100×100×2
1.0
0.5
1 5 10 50 100 500 1000
PW (mS)
50×50×2mm
Without Heatsink
0
–40 0
50 100 150
Ta (°C)
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
3 5 10 50 100
VCE (V)
18

SLA4030
NPN Darlington
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 4 A
ICP 6 (PW≤1ms, Du≤50%) A
IB 0.5 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
Electrical characteristics
(Ta=25°C)
Symbol
min
Specification
typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 100 V IC=10mA
hFE 2000 VCE=4V, IC=2A
VCE(sat) 1.5 V IC=2A, IB=10mA
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
2
4
9
11
1
5
8 12
R1 R2
3
6
R1: 3kΩ typ R2: 500Ω typ
7
10
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=2V)
(VCE=2V)
4
3
2
IB=1mA
0.8mA
0.6mA
0.5mA
0.4mA
0.3mA
hFE
20000
10000
typ
5000
1000
500
20000
10000
5000
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
1
100
100
50
50
0 0 1 2 3
VCE (V)
4 5 6
20
0.02 0.05 0.1 0.5 1 4
IC (A)
20
0.02 0.05 0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=500)
(VCE=2V)
3
3
4
VCE (sat) (V)
2
1
Ta=125°C
75°C
25°C
–30°C
VCE (sat) (V)
2
1
IC=1A
IC=2A
IC=4A
IC (A)
3
2
1
75°C
Ta=125°C
25°C
–30°C
0
0.3 0.5 1 5
IC (A)
0
0.1 0.5 1 5 10
IB (mA)
50
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
25
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
1ms
100µs
PT (W)
15
10
100×100×2
With Infinite Heatsink
10ms
θ j–a (°C / W)
5
IC (A)
1
0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
50×50×2
0
–40 0 50 100 150
Ta (°C)
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50 100 200
VCE (V)
19

SLA4031
NPN Darlington
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
PT
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 120 V
VEBO 6 V
IC 4 A
ICP 6 (PW≤1ms, Du≤50%) A
IB 0.5 A
IF 4 (PW≤0.5ms, Du≤25%) A
IFSM 6 (PW≤10ms, Single) A
VR 120 V
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max Unit Conditions
ICBO 10 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 120 V IC=25mA
hFE 2000 5000 15000 VCE=2V, IC=2A
VCE (sat) 1.0 1.5 V
VBE (sat) 1.6 2.0 V
IC=2A, IB=2mA
ton 0.6 µs VCC 40V,
tstg 5.0 µs IC=2A,
tf 2.0 µs IB1=–IB2=10mA
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
Specification
min typ max Unit Conditions
VR 120 V IR=10µA
VF 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
2 3 4
9 10 11
1
5
8
12
R1 R2
6
7
R1: 3kΩ typ R2: 500Ω typ
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=2V)
(VCE=2V)
4
3
2
IB=1mA
0.8mA
0.6mA
0.5mA
0.4mA
0.3mA
hFE
20000
1000
500
20000
10000
10000
typ
5000
5000
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
1
100
100
50
50
0
0 1 2 3
VCE (V)
4 5
20
0.02 0.05 0.1 0.5 1 4
IC (A)
20
0.02 0.05 0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=500)
(VCE=2V)
3
3
4
VCE (sat) (V)
2
1
Ta=125°C
75°C
25°C
–30°C
VCE (sat) (V)
2
1
IC=1A
IC=2A
IC=4A
IC (A)
3
2
1
75°C
Ta=125°C
25°C
–30°C
0
0.3 0.5 1 5
IC (A)
0
0.1 0.5 1 5 10
IB (mA)
50
0 0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
25
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
100µs
1ms
θj–a (°C / W)
5
PT (W)
15
10
100×100×2
With Infinite Heatsink
IC (A)
1
0.5
10ms
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
50×50×2
0
–40 0 50 100 150
Ta (°C)
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50 100 200
VCE (V)
20

SLA4041
NPN Darlington
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 200 V
VCEO 200 V
VEBO 6 V
IC 3 A
ICP 6 (PW≤10ms, Du≤50%) A
IB 0.2 A
IF 3 (PW≤0.5ms, Du≤25%) A
IFSM 6 (PW≤10ms, single) A
VR 200 V
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=200V
IEBO 10 mA VEB=6V
VCEO 200 V IC=10mA
hFE 1000 6000 15000 VCE=4V, IC=1.5A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.7 2.0 V
IC=1.5A, IB=3mA
VFEC 1.5 V IFEC=2.0A
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
VR 200 V IR=10µA
VF 1.6 V IF=1A
IR 10 µA VR=200V
trr 100 ns IF=±100mA
2 3 4
9 10 11
1
5
8
12
R1 R2
6
R1: 2kΩ typ R2: 200Ω typ
7
Characteristic curves
IC (A)
6
5
4
3
2
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
(VCE=4V)
IB=200mA
100mA
30mA
10mA
3mA
1mA
hFE
5000
1000
500
hFE
5000
1000
500
Ta=125°C
25°C
–30°C
75°C
1
0
0 1 2 3 4 5 6
VCE (V)
100
50
30
0.03 0.05 0.1 0.5 1 5 6
IC (A)
100
50
30
0.03 0.05 0.1 0.5 5 6
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=100)
(VCE=4V)
3
3
6
5
VCE (sat) (V)
2
1
0
0.2 0.5 1 5 6
IC (A)
Ta=125°C
75°C
25°C
–30°C
VCE (sat) (V)
2
1
IC=1A
IC=3A
IC=1.5A
0
0.5 1 5 10 50 100 200
IB (mA)
IC (A)
4
3
2
1
Ta=125°C
75°C
–30°C
25°C
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
25
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
1mS
100µS
10mS
θj–a (°C / W)
5
PT (W)
15
10
100×100×2
With Infinite Heatsink
IC (A)
1
0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
50×50×2
0
–40 0 50 100 150
Ta (°C)
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
5 10 50 100 200
VCE (V)
21

SLA4060
NPN Darlington
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
PT
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θj-c 5 °C/W
■Equivalent circuit diagram
2
4
9
11
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 120 V
VEBO 6 V
IC 5 A
ICP 8 (PW≤1ms, Du≤50%) A
IB 0.5 A
5 (Ta=25°C)
W
25 (Tc=25°C)
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 120 V IC=25mA
hFE 2000 5000 15000 VCE=2V, IC=3A
VCE(sat) 1.0 1.5 V
VBE(sat) 1.6 2.0 V
IC=3A, IB=3mA
ton 0.5 µs VCC 30V,
tstg 5.5 µs IC=3A,
tf 1.5 µs IB1=–IB2=3mA
1
5
8 12
R1 R2
3
6
R1: 2.5kΩ typ R2: 200Ω typ
7
10
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
1mA 0.8mA 0.7mA 0.6mA
(VCE=2V)
(VCE=2V)
5
20000
IB=2mA
20000
10000
10000
typ
4
5000
5000
0.5mA
IC (A)
3
2
0.4mA
hFE
1000
500
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
1
100
100
50
50
0
0 1
2 3 4 5
VCE (V)
20
0.02
0.05 0.1
0.5 1 5
IC (A)
20
0.02
0.05 0.1
0.5 1 5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=2V)
2
3
5
4
VCE (sat) (V)
1 Ta=–30°C
25°C
75°C
125°C
VCE (sat) (V)
2
1
IC=1A
IC=3A
IC=5A
IC (A)
3
2
1
Ta=125°C
75°C
25°C
–30°C
0
0.5
1
IC (A)
5
0
0.2
0.5 1 5 10 50
IB (mA)
0
0
1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
25
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
100µs
1ms
θ j–a (°C / W)
5
PT (W)
15
10
100×100×2
With Infinite Heatsink
10ms
IC (A)
1
0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
50×50×2
0
–40 0 50 100 150
Ta (°C)
0.1
Single Pulse
0.05
Without Heatsink
Ta=25°C
0.03
3 5 10 50 100 200
VCE (V)
22

SLA4061
NPN Darlington
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
PT
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 120 V
VEBO 6 V
IC 5 A
ICP 8 (PW≤1ms, Du≤50%) A
IB 0.5 A
IF 5 (PW≤0.5ms, Du≤25%) A
IFSM 8 (PW≤10ms, single) A
VR 120 V
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 120 V IC=25mA
hFE 2000 5000 15000 VCE=2V, IC=3A
VCE(sat) 1.0 1.5 V
VBE(sat) 1.6 2.0 V
IC=3A, IB=3mA
ton 0.5 µs VCC 30V,
tstg 5.5 µs IC=3A,
tf 1.5 µs IB1=–IB2=3mA
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol min
Specification
typ max Unit Conditions
VR 120 V IR=10µA
VF 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
2 3 4
9 10 11
1
5
8
12
R1 R2
6
7
R1: 2.5kΩ typ R2: 200Ω typ
Characteristic curves
5
4
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=2mA
1mA 0.8mA 0.7mA 0.6mA
(VCE=2V)
(VCE=2V)
20000
20000
0.5mA
10000
10000
typ
5000
5000
0.4mA
IC (A)
3
2
hFE
1000
500
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
1
100
100
50
50
0
0 1
2 3 4 5
VCE (V)
20
0.02
0.05 0.1
0.5 1 5
IC (A)
20
0.02
0.05 0.1
0.5 1 5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=2V)
2
3
5
4
VCE (sat) (V)
1 Ta=–30°C
25°C
75°C
125°C
VCE (sat) (V)
2
1
IC=1A
IC=5A
IC=3A
IC (A)
3
2
Ta=125°C
75°C
25°C
–30°C
1
0
0.5 1
5
IC (A)
0
0.2
0.5 1 5 10 50
IB (mA)
0
0
1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
25
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
100µs
1ms
θj–a (°C / W)
5
PT (W)
15
10
100×100×2
With Infinite Heatsink
10ms
IC (A)
1
0.5
1
5
Without Heatsink
0.5
1 5 10 50 100 500 1000
PW (mS)
50×50×2
0.1
0
–40 0 50 100 150
Ta (°C)
Single Pulse
0.05 Without Heatsink
0.03
Ta=25°C
3 5 10 50 100 200
VCE (V)
23

SLA4070
PNP Darlington
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
PT
(Ta=25°C)
Symbol Ratings Unit
VCBO –100 V
VCEO –100 V
VEBO –6 V
IC –5 A
ICP –8 (PW≤1ms, Du≤50%) A
IB –0.5 A
5 (Ta=25°C)
W
25 (Tc=25°C)
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–100V
IEBO –10 mA VEB=–6V
VCEO –100 V IC=–10mA
hFE 1000 5000 15000 VCE=–2V, IC=–3A
VCE(sat) –1.0 –1.5 V
VBE(sat) –1.6 –2.0 V
IC=–3A, IB=–6mA
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
R1 R2
3
6
7
10
1
5
8
12
2
4
R1: 3kΩ typ R2: 100Ω typ
9
11
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=–4V)
(VCE=–4V)
–8
IB= –4mA
–7
–6
–5
–4
–3
–2mA
–1.2mA
–0.8mA
–0.6mA
hFE
10000
typ
5000
1000
500
hFE
10000
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
–2
–0.4mA
–1
100
100
0
0
–1 –2 –3 –4 –5
VCE (V)
50
–0.03
–0.1
–0.5 –1 –5 –8
IC (A)
50
–0.03
–0.1
–0.5 –1 –5 –8
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=–4V)
–3
–3
–8
–6
VCE (sat) (V)
–2
–1
Ta= –30°C
25°C
75°C
125°C
VCE (sat) (V)
–2
–1
IC= –1A
IC= –3A
IC= –5A
IC (A)
–4
–2
Ta=125°C
75°C
25°C
–30°C
0
–0.3
–0.5 –1 –5 –8
IC (A)
0
–0.3 –1 –5 –10 –50 –100 –200
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
25
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
–8
–5
1ms
100µs
10ms
θ j–a (°C/W)
5
PT (W)
15
10
100×100×2
With Infinite Heatsink
IC (A)
–1
–0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
50×50×2
0
–40 0 50 100 150
Ta (°C)
–0.1
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100
VCE (V)
24

SLA4071
PNP Darlington
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
PT
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
6
7
(Ta=25°C)
Symbol Ratings Unit
VCBO –100 V
VCEO –100 V
VEBO –6 V
IC –5 A
ICP –8 (PW≤1ms, Du≤50%) A
IB –0.5 A
IF –5 (PW≤0.5ms, Du≤25%) A
IFSM –8 (PW≤10ms, single) A
VR 120 V
5 (Ta=25°C)
W
25 (Tc=25°)
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–100V
IEBO –10 mA VEB=–6V
VCEO –100 V IC=–10mA
hFE 2000 5000 15000 VCE=–2V, IC=–3A
VCE(sat) –1.0 –1.5 V
VBE(sat) –1.6 –2.0 V
IC=–3A, IB=–6mA
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
min
Specification
typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
R1 R2
1
5
8
12
2 3 4
9 10 11
R1: 3kΩ typ R2: 100Ω typ
Characteristic curves
–8
–7
–6
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=–4mA
–2mA
–1.2mA
(VCE=–4V) (VCE=–4V)
10000
10000
typ
5000
5000
IC (A)
–5
–4
–3
–0.8mA
–0.6mA
hFE
1000
500
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
–2
–0.4mA
–1
100
100
0
0
–1 –2 –3 –4 –5
VCE (V)
50
–0.03
–0.1
–0.5 –1 –5 –8
IC (A)
50
–0.03
–0.1
–0.5 –1 –5 –8
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
–3
–3
(VCE=–4V)
–8
–6
VCE (sat) (V)
–2
–1
Ta=–30°C
25°C
75°C
125°C
VCE (sat) (V)
–2
–1
IC=1A
IC=–3A
IC=–5A
IC (A)
–4
–2
Ta=125°C
75°C
25°C
–30°C
0
–0.3
–0.5 –1 –5 –8
IC (A)
0
–0.3 –0.5 –1 –5 –10 –50 –100 –200
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
25
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
–10
–5
100µs
1ms
10ms
θj–a (°C / W)
5
PT (W)
15
10
100×100×2
With Infinite Heatsink
IC (A)
–1
–0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
50×50×2
0
–40 0 50 100 150
Ta (°C)
–0.1
Single Pulse
–0.05 Without Heatsink
–0.03
Ta=25°C
–3 –5 –10 –50 –100
VCE (V)
25

SLA4310
PNP + NPN
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
ICP 6 (PW≤1ms, Du≤50%) –6 (PW≤1ms, Du≤50%) A
IB 1 –1 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
7 10
8
12
9
2
11
4
1
5
Characteristic curves
3
6
IC (A)
4
3
2
IB=70mA
NPN PNP NPN
–4
4
60mA
50mA
40mA
30mA
20mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IC (A)
–3
–2
IB=–80mA
–60mA
–50mA
–40mA
–30mA
–20mA
IC (A)
3
2
(VCE=4V)
1
10mA
5mA
–1
–10mA
–5mA
1
75°C
Ta=125°C
25°C
–30°C
0
0
1 2 3
VCE (V)
4 5 6
0
0 –1 –2
–3 –4 –5 –6
VCE (V)
0
0
0.5 1.0
1.5
VBE (V)
500
hFE-IC Characteristics (Typical)
NPN (VCE=4V)
PNP (VCE=–4V)
PNP
500
–4
(VCE=–4V)
–3
typ
typ
hFE
100
hFE
100
IC (A)
–2
50
50
–1
75°C
Ta=125°C
25°C
–30°C
20
0.01
0.05 0.1 0.5 1 4
IC (A)
20
–0.01
–0.05 –0.1 –0.5
IC (A)
–1 –4
0
0
–0.5 –1.0
–1.5
VBE (V)
500
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
500
PNP
(VCE=–4V)
hFE
100
Ta=125°C
75°C
25°C
–30°C
hFE
100
Ta=125°C
75°C
25°C
–30°C
50
50
20
0.01
0.05
0.1 0.5 1 4
IC (A)
20
–0.01
–0.05
0.1 –0.5 –1 –4
IC (A)
26

10ms
SLA4310
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –10 µA VEB=–6V
VCEO 60 V IC=25mA –60 V IC=–25mA
hFE 80 VCE=4V, IC=1A 80 VCE=–4V, IC=–1A
VCE(sat) 0.6 V IC=2A, IB=0.2A –0.6 V IC=–2A, IB=–0.2A
Characteristic curves
1.5
NPN
VCE(sat)-IB Characteristics (Typical)
–1.5
PNP
θ j-a-PW Characteristics
20
10
VCE (sat) (V)
1.0
0.5
IC=3A
VCE (sat) (V)
–1.0
–0.5
θj–a (°C / W)
5
2A
2A
IC=3A
1
1A
1A
0
0.005 0.01
0.05 0.1 0.5 1
IB (A)
0
–0.005 –0.01
–0.05 –0.1 –0.5 –1
IB (A)
0.5
1 5 10 50 100 500 1000
PW (mS)
VCE (sat) • VBE (sat) (V)
1.0
0.5
VBE (sat)
NPN
VCE(sat) • VBE(sat)-IC Characteristics (Typical)
(IC / IB=10)
–1.0
VCE(sat) • VBE(sat) (V)
–0.5
VBE (sat)
PNP
(IC / IB=10)
PT (W)
PT-Ta Characteristics
25
20
15
10
Without Heatsink
5
100×100×2
50×50×2
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
With Infinite Heatsink
VCE (sat)
0
0.05 0.1 0.5 1
IC (A)
3
0
–0.05
VCE (sat)
–0.1 –0.5 –1 –3
IC (A)
0
–40 0 50 100 150
Ta (°C)
10
NPN
Safe Operating Area (SOA)
–10
PNP
5
1ms
–5
1ms
10ms
IC (A)
1
0.5
IC (A)
–1
–0.5
0.1 Without Heatsink
T=25°C
0.05
3
Single Pulse
5
10 50 100
VCE (V)
Single Pulse
–0.1 Without Heatsink
Ta=25°C
–0.05
–3
–5
–10 –50 –100
VCE (V)
27

SLA4340
PNP + NPN Darlington
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
ICP 6 (PW≤1ms, Du≤50%) –6 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A
PT
R3 R4
7
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
8
12
9
11
2 4
1 5
R1 R2
6
R1: 3kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 150Ω typ
Characteristic curves
6
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
–6
IB=4.0mA
2.0mA
1.2mA
IB=–2.2mA
–1.8mA
6
–1.5mA
–1.2mA
5
(VCE=4V)
4
0.8mA
–4
–1.0mA
4
IC (A)
2
0.6mA
0.5mA
0.4mA
IC (A)
–2
–0.9mA
–0.8mA
IC (A)
3
2
75°C
Ta=125°C
–30°C
1
25°C
0
0 2 4 6
VCE (V)
0
0 –2 –4 –6
VCE (V)
0
0 1 2 3
VBE (V)
10000
5000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
10000
–6
typ
5000 typ
–5
(VCE=–4V)
–4
hFE
1000
500
hFE
1000
500
IC (A)
–3
–2
75°C
25°C
Ta=125°C
–30°C
100
100
–1
50
0.03
0.1 0.5 1 5 6
IC (A)
50
–0.03
–0.1 –0.5 –1 –5 –6
IC (A)
0
0 –1 –2 –3
VBE (V)
10000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10000
PNP
(VCE=–4V)
hFE
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
hFE
5000
1000
500
Ta=125°C
–30°C
75°C
25°C
100
100
50
0.03
0.1 0.5 1 5 6
IC (A)
50
–0.03
–0.1 –0.5 –1 –5 –6
IC (A)
28

1ms
SLA4340
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 2000 VCE=4V, IC=3A 2000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
2
1
IC=2A
IC=1A
IC=4A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–2A
IC=–4A
θj–a (°C / W)
5
1
0
0.2 0.5 1 5 10 50 100
IB (mA)
0
–0.2 –0.5 –1 –5 –10 –50 –100
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
3
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
–3
75°C
25°C
(IC / IB=1000)
25
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
With Infinite Heatsink
VCE (sat) (V)
2
1
Ta=125°C
–30°C
VCE (sat) (V)
–2
–1
Ta=–30°C
25°C
75°C
PT (W)
15
10
100×100×2
50×50×2
125°C
5
Without Heatsink
0
0.5
1 5 6
IC (A)
0
–0.5
–1 –5 –6
IC (A)
0
–40 0 50 100 150
Ta (°C)
10
NPN
Safe Operating Area (SOA)
–10
PNP
5
–5
10ms
1ms
IC (A)
1
0.5
IC (A)
–1
–0.5
10ms
0.1
Single Pulse
0.05 Without Heatsink
0.03
Ta=25°C
3 5 10 50 100
VCE (V)
–0.1
Single Pulse
–0.05 Without Heatsink
–0.03
Ta=25°C
–3 –5 –10 –50 –100
VCE (V)
29

SLA4390
PNP + NPN Darlington
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 100 –100 V
VCEO 100 –100 V
VEBO 6 –6 V
IC 5 –5 A
ICP 8 (PW≤1ms, Du≤50%) –8 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
R3
R4
7
8
12
9
11
2 4
1 5
R1 R2
Characteristic curves
6
R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ
IC (A)
8
7
6
5
4
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
(VCE=4V)
–8
8
IB=2mA
0.6mA
0.5mA
1mA
0.8mA
0.7mA
IC (A)
IB=–4mA
–7
–6
–5
–4
–2mA
–1.2mA
–0.8mA
–0.6mA
IC (A)
6
4
3
0.4mA
–3
2
1
–2
–1
–0.4mA
2
Ta=125°C
75°C
25°C
–30°C
0
0 1 2 3 4 5
VCE (V)
0
0 –1 –2 –3 –4 –5
VCE (V)
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
20000
–8
(VCE=–4V)
10000
typ
10000
5000
5000
typ
–6
hFE
1000
500
hFE
1000
500
IC (A)
–4
100
50
30
0.03 0.1 0.5 1 5 8
IC (A)
100
50
30
–0.03 –0.1 –0.5 –1 –5
IC (A)
–8
–2
Ta=125°C
75°C
25°C
–30°C
0
0 –1 –2 –3
VBE (V)
20000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
10000
hFE
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
hFE
5000
1000
500
25°C
75°C
–30°C
Ta=125°C
100
100
50
30
0.03 0.05 0.1 0.5 1 5 8
IC (A)
50
30
–0.03 –0.05 –0.1 –0.5 –1 –5 –8
IC (A)
30

SLA4390
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=100V –10 µA VCB=–100V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 100 V IC=10mA –100 V IC=–10mA
hFE 2000 VCE=4V, IC=3A 2000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
2
1
IC=1A
IC=5A
IC=3A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–3A
IC=–5A
θj–a (°C / W)
5
1
0
0.2 0.5
1 5 10 50
IB (mA)
0
–0.2 –0.5 –1 –5 –10 –50 –100 –500
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
3
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
–3
Ta=125°C
(IC / IB=1000)
25
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
VCE (sat) (V)
2
1
75°C
25°C
–30°C
VCE (sat) (V)
–2
–1
75°C 25°C Ta=–30°C
125°C
PT (W)
15
10
Without Heatsink
5
100×100×2
50×50×2
With Infinite Heatsink
0
0.3 0.5
1 5 8
IC (A)
0
–0.3 –0.5
–1 –5 –8
IC (A)
0
–40 0 50 100 150
Ta (°C)
10
NPN
Safe Operating Area (SOA)
–10
PNP
5
100µs
–5
100µs
1ms
1ms
10ms
10ms
1
–1
IC (A)
0.5
IC (A)
–0.5
0.1
–0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10
VCE (V)
50
100
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10
VCE (V)
–50
–100
31

SLA4391
PNP + NPN Darlington
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 100 –100 V
VCEO 100 –100 V
VEBO 6 –6 V
IC 5 –5 A
ICP 8 (PW≤1ms, Du≤50%) –8 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A
IF 5 (PW≤0.5ms, Du≤25%) A
IFSM 8 (PW≤10ms, single) A
VR 120 V
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
R3
R4
3
10
1
2
11
12
5
4
9
8
R1
R2
6
7
R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ
Characteristic curves
IC (A)
8
7
6
5
4
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
IB=2mA
0.6mA
0.5mA
1mA
0.8mA
0.7mA
IC (A)
–8
IB=–4mA
–7
–6
–5
–4
–2mA
–1.2mA
–0.8mA
–0.6mA
IC (A)
8
6
4
(VCE=4V)
3
0.4mA
–3
2
1
–2
–1
–0.4mA
2
Ta=125°C
75°C
25°C
–30°C
0
0 1 2 3 4 5
VCE (V)
0
0 –1 –2 –3 –4 –5
VCE (V)
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN
(VCE=4V)
PNP
(VCE=–4V)
PNP
20000
–8
(VCE =–4V)
10000
5000
typ
10000
5000
typ
–6
hFE
1000
500
hFE
1000
500
IC (A)
–4
100
50
30
0.03 0.1 0.5 1 5 8
IC (A)
100
50
30
–0.03 –0.1 –0.5 –1 –5 –8
IC (A)
–2
Ta=125°C
75°C
25°C
–30°C
0
0 –1 –2 –3
VBE (V)
20000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
10000
5000
5000
hFE
1000
500
Ta=125°C
–30°C
75°C
25°C
hFE
1000
500
Ta=125°C
–30°C
75°C
25°C
100
100
50
30
0.03 0.1 0.5 1 5 8
IC (A)
50
30
–0.03 –0.1 –0.5 –1 –5 –8
IC (A)
32

SLA4391
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=100V –10 µA VCB=–100V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 100 V IC=10mA –100 V IC=–10mA
hFE 1000 VCE=4V, IC=3A 1000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.2 V IF=1A
IR 10 µA VR=100V
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
2
1
IC=1A
IC=5A
IC=3A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–3A
IC=–5A
θj–a (°C / W)
5
1
0
0.2 0.5
1 5 10 50
IB (mA)
0
–0.2 –0.5 –1 –5 –10 –50 –100 –500
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
3
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
–3
Ta=125°C
75°C
(IC / IB=1000)
25
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
VCE (sat) (V)
2
1
25°C
–30°C
VCE (sat) (V)
–2
–1
75°C 25°C Ta=–30°C
125°C
PT (W)
15
10
Without Heatsink
5
With Infinite Heatsink
100×100×2
50×50×2
0
0.3 0.5
1 5 8
IC (A)
0
–0.3 –0.5
–1 –5 –8
IC (A)
0
–40 0 50 100 150
Ta (°C)
10
NPN
Safe Operating Area (SOA)
–10
PNP
5
100µs
–5
100µs
1ms
10ms
1ms
IC (A)
1
0.5
IC (A)
–1
–0.5
10ms
0.1
–0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10
VCE (V)
50
100
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10
VCE (V)
–50
–100
33

SLA5001
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±5 A
ID(pulse) ±10(PW≤1ms) A
EAS* 30 mJ
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250 µA VDS=100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 2.4 3.7 S VDS=10V, ID=5A
RDS(ON) 0.27 0.30 Ω VGS=10V, ID=5A
Ciss 350 pF VDS=25V, f=1.0MHz,
Coss 130 pF VGS=0V
ton 60 ns ID=5A, VDD 50V,VGS=10V,
toff 40 ns see Fig. 3 on page 16.
VSD 1.1 1.8 V ISD=5A, VGS=0V
trr 330 ns ISD=±100mA
2
4
9
11
1
5
8
12
3
6
7
10
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
10
10
0.4
10V
7V
8
6V
8
0.3
ID (A)
6
4
5V
ID (A)
6
4
TC=–40°C
25°C
RDS (ON) (Ω)
0.2
2
2
125°C
0.1
VGS=4V
0
0 2 4 6 8 10
VDS (V)
0
0 2 4 6 8
VGS (V)
0
0
2
4 6 8 10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=5A
VGS=0V
(VDS=10V)
VGS=10V
7
0.5
1000
f=1MHz
5
0.4
500
Ciss
Re (yfs) (S)
1
TC=–40°C
25°C
RDS (ON) (Ω)
0.3
0.2
Capacitance (pF)
100
50
Coss
0.5
125°C
0.1
Crss
0.3
0.05 0.1
0.5 1
ID (A)
5 10
0
–40
0 50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR (A)
10
8
6
4
2
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
10V
5V
VGS= 0V
ID (A)
20
10
5
1
0.5
(TC=25°C)
ID (pulse) max
RDS (ON)
LIMITED
1ms
10 ms (1shot)
100µs
PT (W)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
34
0
0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
V DS (V)
0
0 50 100 150
Ta (°C)

SLA5002
N-channel
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms) A
EAS* 30 mJ
IF 5 (PW≤0.5ms, Du≤25%) A
IFSM 10 (PW≤10ms, Single Pulse) A
VR 120 V
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15
■Equivalent circuit diagram
1
2
5
3
4
8
9
10
12
11
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250 µA VDS=100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 2.4 3.7 S VDS=10V, ID=5A
RDS(ON) 0.27 0.30 Ω VGS=10V, ID=5A
Ciss 350 pF VDS=25V, f=1.0MHz,
Coss 130 pF VGS=0V
ton 60 ns ID=5A, VDD 50V,VGS=10V,
toff 40 ns see Fig. 3 on page 16.
VSD 1.1 1.8 V ISD=5A, VGS=0V
trr 330 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
6
7
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
10
10
0.4
10V
7V
8
8
0.3
6V
ID (A)
6
4
2
5V
ID (A)
6
4
2
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.2
0.1
VGS=4V
0
0 2 4 6 8 10
VDS (V)
0
0 2 4 6 8
VGS (V)
0
0
2
4 6 8 10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=5A
VGS=0V
(VDS=10V)
VGS=10V
f=1MHz
7
0.5
1000
5
0.4
500
Ciss
Re (yfs) (S)
1
TC=–40°C
25°C
RDS (ON) (Ω)
0.3
0.2
Capacitance (pF)
100
50
Coss
125°C
0.5
0.1
Crss
IDR (A)
0.3
0.05 0.1
0.5 1
10
ID (A)
5 10
0
–40
0 50 100 150
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(TC=25°C)
8
6
4
2
10V
5V
VGS=0V
ID (A)
20
10
5
1
0.5
ID (pulse) max
RDS (ON) LIMITED
TC (°C)
10 ms (1shot)
100µs
1ms
PT (W)
10
0 10 20 30 40 50
VDS (V)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
0
0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
VDS (V)
0
0 50 100 150
Ta (°C)
35

SLA5003
N-channel
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 200 V
VGSS ±20 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms) A
EAS* 60 mJ
IF 5(PW≤0.5ms, Du≤25%) A
IFSM 10(PW≤10ms, Single pulse) A
VR 200 V
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=10mH, ID=3.5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
1
2
5
3
4
8
9
10
12
11
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 200 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250 µA VDS=200V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 1.3 2.5 S VDS=10V, ID=5A
RDS(ON) 0.67 0.9 Ω VGS=10V, ID=5A
Ciss 260 pF VDS=25V, f=1.0MHz,
Coss 100 pF VGS=0V
ton 50 ns ID=5A, VDD 100V,VGS=10V,
toff 60 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V
trr 700 ns ISD=±100mA
●Diode for flyback voltage absorption (1 circuit)
Symbol
Specification
min typ max
Unit Conditions
VR 200 V IR=10µA
VF
1.0 1.2 V IF=1A
1.5 2.0 V IF=5A
IR 10 µA VR=200V
trr 100 ns IF=±100mA
6
7
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
8
10V
8
1.5
6
7V
6
1.0
ID (A)
4
2
6V
VGS=5V
ID (A)
4
2
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.5
0
0 5 10 15 20
VDS (V)
0
0 2 4 6 8
VGS (V)
10
0
0
1 2 3
4 5 6 7 8
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=5A
VGS=0V
5
(VDS=10V)
VGS=10V
2.5
1000
f=1MHz
TC=–40°C
25°C
2.0
500
Ciss
Re (yfs) (S)
1
0.5
125°C
RDS (ON) (Ω)
1.5
1.0
Capacitance (pF)
100
50
Coss
0.5
10
Crss
IDR (A)
0.2
0.05 0.1
0.5 1
ID (A)
5 10
0
–40
0 50 100 150
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(TC=25°C)
8
6
4
ID (A)
20
10
5
1
0.5
ID (pulse) max
RDS (ON)
LIMITED
TC (°C)
10 ms (1shot)
1ms
100µs
PT (W)
5
0 10 20 30 40 50
VDS (V)
40
35
30
25
20
15
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
36
2
10V
VGS=0V
5V
0
0 0.5
1.0 1.5
VSD (V)
0.1
0.05
0.03
3
5 10 50 100 200
VDS (V)
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)

SLA5004
P-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS –60 V
VGSS 20 V
ID 5 A
ID(pulse) 10 (PW≤1ms) A
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS –60 V ID=–250µA, VGS=0V
IGSS 500 nA VGS= 20V
IDSS –250 µA VDS=–60V, VGS=0V
VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.3 3.5 S VDS=–10V, ID=–5A
RDS(ON) 0.22 0.30 Ω VGS=–10V, ID=–5A
Ciss 570 pF VDS=–25V, f=1.0MHz,
Coss 360 pF VGS=0V
ton 100 ns ID=–5A, VDD –30V,VGS=–10V,
toff 60 ns see Fig. 4 on page 16.
VSD –4.5 –5.5 V ISD=–5A
trr 150 ns ISD= 100mA
±
3
6
7
10
1
5
8
12
2
4
9
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=–10V)
(VGS=–10V)
-–10
---10
0.25
–10V
–7V
TC=–40°C
25°C
---8
---8
125°C
0.20
ID (A)
---6
---4
–6V
ID (A)
---6
---4
RDS (ON) (Ω)
0.15
0.10
---2
–5V
---2
0.05
VGS=–4V
0
0 ---2 ---4 ---6 ---8 ---10
VDS (V)
0
0 ---2 ---4 ---6 ---8
VGS (V)
0
0
---2
---4 ---6 ---8
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=–5A
VGS=0V
(VDS=–10V)
8
0.4
VGS=–10V
2000
f=1MHz
---10
5
1000
Re (yfs) (S)
1
25°C
125°C
TC=–40°C
RDS (ON) (Ω)
0.3
0.2
0.1
Capacitance (pF)
500
100
Ciss
Coss
0.5
50
Crss
IDR (A)
0.3
---0.1
–10
–8
–6
–4
–2
---0.5 ---1
ID (A)
---5 ---10
0
---40
0 50 100 150
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
–10V
–5V
VGS=0V
ID (A)
---20
---10
---5
---1
---0.5
ID (pulse) max
RDS (ON) LIMITED
TC (°C)
10 ms (1shot)
(TC=25°C)
1ms
100µs
PT (W)
30
0 ---10 ---20 ---30 ---40 ---50
40
35
30
25
20
15
10
Without Heatsink
5
VDS (V)
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
0
0 –1 –2 –3 –4
VSD (V)
---0.1
---0.5
---1 ---5 ---10 ---50 ---100
VDS (V)
0
0 50 100 150
Ta (°C)
37

SLA5005
P-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS –100 V
VGSS 20 V
ID 5 A
ID(pulse) 10 (PW≤1ms) A
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specifications
min typ max
Unit Condition
V(BR)DSS –100 V ID=–250µA, VGS=0V
IGSS 500 nA VGS= 20V
IDSS –250 µA VDS=–100V, VGS=0V
VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 0.9 2.0 S VDS=–10V, ID=–5A
RDS(ON) 0.55 0.7 Ω VGS=–10V, ID=–5A
Ciss 300 pF VDS=–25V, f=1.0MHz,
Coss 200 pF VGS=0V
ton 150 ns ID=–5A, VDD –50V, VGS=–10V,
toff 200 ns see Fig. 4 on page 16.
VSD –4.5 –5.5 V ISD=–5A, VGS=0V
trr 220 ns ISD= 100mA
3
6
7
10
1
5
8
12
2
4
9
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=–10V)
(VGS=–10V)
–10
–10
1.0
–10V
TC=–40°C
25°C
–8
–8
0.8
125°C
ID (A)
–6
–4
–7V
–6V
ID (A)
–6
–4
RDS (ON) (Ω)
0.6
0.4
–2
–5V
–2
0.2
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 –2 –4 –6 –8 –10
VGS (V)
0
0
---2
---4 ---6 ---8
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=–5A
VGS=0V
5
(VDS=–10V)
1.2
VGS=–10V
1000
f=1MHz
ID (A)
---10
1.0
500
Ciss
Re (yfs) (S)
1
0.5
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.8
0.6
0.4
0.2
Capacitance (pF)
100
50
Coss
Crss
38
IDR (A)
0.3
---0.05 ---0.1
---10
---8
---6
---4
---2
---0.5 ---1
ID (A)
---5 ---10
0
--- 40
0 50 100 150
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
–10V
–5V
VGS=0V
0
0 ---1 ---2 ---3 ---4
VSD (V)
ID (A)
---20
---10
---5
---1
---0.5
---0.1
---0.5
ID (pulse) max
RDS (ON) LIMITED
TC (°C)
10 ms (1shot)
(TC=25°C)
1ms
100µs
–1 ---5 ---10 ---50 ---100
VDS (V)
PT (W)
20
0 ---10 ---20 ---30 ---40 ---50
40
35
30
25
20
VDS (V)
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
15
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)

SLA5006
P-channel
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS –100 V
VGSS 20 V
ID 5 A
ID(pulse) 10(PW≤1ms) A
IF 5(PW≤0.5ms, Du≤25%) A
IFSM 10(PW≤10ms, Single pulse) A
VR 120 V
PT
±
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
6
7
1 5 8 12
±
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Condition
V(BR)DSS –100 V ID=–250µA, VGS=0V
IGSS 500 nA VGS= 20V
IDSS –250 µA VDS=–100V, VGS=0V
VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 0.9 2.0 S VDS=–10V, ID=–5A
RDS(ON) 0.55 0.7 Ω VGS=–10V, ID=–5A
Ciss 300 pF VDS=–25V, f=1.0MHz,
Coss 200 pF VGS=0V
ton 150 ns ID=–5A, VDD –50V, VGS=–10V,
toff 200 ns see Fig. 4 on page 16.
VSD –4.5 –5.5 V ISD=–5A, VGS=0V
trr 220 ns ISD= 100mA
●Diode for flyback voltage absorption
Symbol
Specification
min typ max
Unit Condition
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF= 100mA
2
3
4
9
10
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=–10V)
(VGS=–10V)
–10
–10
1.0
–8
–10V
–8
TC=–40°C
25°C
125°C
0.8
ID (A)
–6
–4
–7V
–6V
ID (A)
–6
–4
RDS (ON) (Ω)
0.6
0.4
–2
–5V
–2
0.2
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 –2 –4 –6 –8 –10
VGS (V)
0
0
---2
---4 ---6 ---8
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=–5A
VGS=0V
(VDS=–10V)
5
1.2
VGS=–10V
1000
f=1MHz
ID (A)
---10
1.0
500
Ciss
Re (yfs) (S)
1
0.5
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.8
0.6
0.4
0.2
Capacitance (pF)
100
50
Coss
Crss
IDR (A)
0.3
---0.05 ---0.1
---10
---8
---6
---4
---2
---0.5 ---1
ID (A)
---5 ---10
0
–40
0 50 100 150
TC (°C)
20
0 ---10 ---20 ---30 ---40 ---50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
–10V
–5V
VGS=0V
ID (A)
---20
---10
---5
---1
---0.5
ID (pulse) max
RDS (ON)
LIMITED
(TC=25°C)
10 ms (1shot)
100µs
1ms
PT (W)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
0
0 ---1 ---2 ---3 ---4
VSD (V)
---0.1
---0.5
---1 ---5 ---10 ---50 ---100
VDS (V)
0
0 50 100 150
Ta (°C)
39

SLA5007
N-channel + P-channel
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratigs
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS* 2 — mJ
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10 7
Pch
12
8
11
2
9
4
Nch
1
5
Characteristic curves
3
6
10
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
–8
10
7V
–10V
(VDS=10V)
8
–6
8
ID (A)
6
6V
4
5V
2
VGS=4V
0
0 2 4 6 8 10
VDS (V)
ID (A)
–7V
–4
–6V
–2
–5V
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
ID (A)
6
4
TC=–40°C
25°C
2
125°C
0
0 2 4 6
8
VGS (V)
0.20
RDS(ON)-ID Characteristics (Typical)
N-ch P-ch P-ch
(VGS=10V)
(VGS=–10V)
0.6
–8
TC=–40°C
(VDS=–10V)
0.5
25°C
0.15
–6
125°C
RDS (ON) (Ω)
0.10
RDS (ON) (Ω)
0.4
0.3
0.2
ID (A)
–4
0.05
0.1
–2
0
0
2 4 6 8 10
ID (A)
0
0
---2
---4 ---6 ---8
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
RDS(ON)-TC Characteristics (Typical)
0.3
N-ch
ID=5A
VGS=10V
1.0
P-ch
ID=–4A
VGS=–10V
0.8
RDS (ON) (Ω)
0.2
0.1
RDS (ON) (Ω)
0.6
0.4
0.2
0
--- 40
0 50 100 150
TC (°C)
0
--- 40
0 50 100 150
TC (°C)
40

SLA5007
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.2 3.3 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 35 ns ID=5A, VDD 30V,VGS=10V 60 ns ID=–4A, VDD –30V,VGS=10V,
toff 35 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 140 ns ISD=±100mA 150 ns ISD= 100mA
Characteristic curves
10
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch P-ch N-ch
(VDS=10V)
(VDS=–10V)
(TC=25°C)
5
20
Re (yfs) (S)
5
1
TC=–40°C
125°C
25°C
Re (yfs) (S)
1
TC=–40°C
25°C
125°C
ID (A)
10
5
1
0.5
ID (pulse) max
RDS (ON)
LIMITED
10 ms (1shot)
1ms
100µs
0.5
0.5
0.3
0.08 0.5 1
ID (A)
5 10
0.3
---0.1
---0.5 ---1
ID (A)
---5 ---8
0.1
0.5
1 5 10 50 100
VDS (V)
Capacitance (pF)
1000
500
100
50
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
P-ch
f=1MHz
f=1MHz
700
---10
Ciss
Coss
Crss
Capacitance (pF)
500
Ciss
Coss
100
50
Crss
ID (A)
---5
---1
---0.5
ID (pulse) max
RDS (ON) LIMITED
(TC=25°C)
1ms
10 ms (1shot)
100µs
10
0 10 20 30 40 50
VDS (V)
10
8
N-ch
IDR-VSD Characteristics (Typical)
10
0 ---10 ---20 ---30 ---40 ---50
–8
–6
VDS (V)
P-ch
---0.1
---0.5
40
35
30
---1 ---5 ---10 ---50 ---100
VDS (V)
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
IDR (A)
6
4
2
10V
5V
VGS=0V
IDR (A)
–4
–2
–10V
–5V
VGS=0V
PT (W)
25
20
15
10
Without Heatsink
5
0
0 0.5
1.0 1.5
VSD (V)
0
0 –1 –2 –3 –4 –5
VSD (V)
0
0 50 100 150
Ta (°C)
41

SLA5008
N-channel + P-channel
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 100 –100 V
VGSS ±20 20 V
ID ±4 3 A
ID(pulse) ±8 (PW≤1ms) 6 (PW≤1ms) A
EAS* 15 — mJ
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-c 3.57 °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch
12
8
11
2
9
4
Nch
1
5
Characteristic curves
3
6
ID (A)
8
7
6
5
4
3
2
1
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
7V
6V
VGS=5V
ID (A)
–6
–10V
–5
–7V
–4
–3
–6V
–2
VGS=–5V
–1
ID (A)
8
7
25°C
6
5
4
3
2
1
TC=–40°C
(VDS=10V)
125°C
0
0 10
20
VDS (V)
0
0 –5 –10 –15 –20
VDS (V)
0
0 2 4 6 8 10
VGS (V)
RDS (ON) (Ω)
0.8
0.6
0.4
0.2
RDS(ON)-ID Characteristics (Typical)
N-ch
(VGS=10V)
P-ch
(VGS=–10V)
P-ch
1.5
–6
–5
RDS (ON) (Ω)
1.0
0.5
ID (A)
–4
–3
–2
–1
TC=–40°C
(VDS=–10V)
25°C
125°C
0
0
1 2 3 4 5 6 7 8
ID (A)
0
0
–1
–2
–3 –4 –5 –6
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
1.2
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=4A
VGS=10V
2.0
P-ch
ID=–3A
VGS=–10V
1.0
1.5
RDS (ON) (Ω)
0.8
0.6
0.4
0.2
RDS (ON) (Ω)
1.0
0.5
0
--- 40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
42

SLA5008
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specifications
Specifications
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V –100 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=100V, VGS=0V –250 µA VDS=–100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A 0.7 1.1 S VDS=–10V, ID=–3A
RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A 1.1 1.3 Ω VGS=–10V, ID=–3A
Ciss 180 pF VDS=25V, f=1.0MHz, 180 pF VDS=–25V, f=1.0MHz,
Coss 82 pF VGS=0V 85 pF VGS=0V
ton 40 ns ID=4A, VDD 50V, VGS=–10V, 90 ns ID=–3A, VDD –50V, VGS=–10V,
toff 40 ns see Fig. 3 on page 16. 80 ns see Fig. 4 on page 16.
VSD 1.2 2.0 V ISD=4A –4.0 –5.5 V ISD=–3A
trr 250 ns ISD=±100mA 250 ns ISD= 100mA
Characteristic curves
Re (yfs) (S)
5
1
0.5
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch P-ch N-ch
(VDS=10V)
(VDS=–10V)
(TC=25°C)
5
10
TC=–40°C
125°C
25°C
Re (yfs) (S)
1
0.5
TC=–40°C
25°C
125°C
ID (A)
5
1
0.5
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
1ms
100µs
Capacitance (pF)
0.2
0.05 0.1
0.5 1
ID (A)
600
100
50
5 8
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
P-ch
f=1MHz
f=1MHz
700
---10
Ciss
Coss
Capacitance (pF)
0.2
–0.05 –0.1
500
100
50
–0.5 –1
ID (A)
Ciss
Coss
–6
ID (A)
0.1
0.5
---5
---1
---0.5
1 5 10 50 100
ID (pulse) max
RDS (ON) LIMITED
VDS (V)
(TC=25°C)
10 ms (1shot)
1ms
100µs
10
Crss
10
Crss
5
0 10 20 30 40 50
VDS (V)
5
0 ---10 ---20 ---30 ---40 ---50
VDS (V)
---0.1
---0.5
---1 ---5 ---10 ---50 ---100
VDS (V)
IDR (A)
8
7
6
5
4
3
2
1
10V
IDR-VSD Characteristics (Typical)
N-ch
P-ch
---6
---5
---4
5V
VGS=0V
0 0
0 0.5
1.0 1.5
0 –1 –2 –3 –4
VSD (V)
VSD (V)
IDR (A)
---3
---2
–1
–10V
–5V
VGS=0V
PT (W)
40
35
30
25
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
15
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
43

SLA5009
N-channel + P-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS* 2 — mJ
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
1
Pch
2
8
9
3
7
10
Nch
4
6
11
Characteristic curves
5
12
10
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
–8
10
7V
–10V
(VDS=10V)
8
–6
8
ID (A)
6
6V
4
5V
2
VGS=V
0
0 2a 4 6 8 10
VDS (V)
ID (A)
–7V
–4
–6V
–2
–5V
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
ID (A)
6
4
TC=–40°C
25°C
2
125°C
0
0 2 4 6
8
V GS (V)
0.20
RDS(ON)-ID Characteristics (Typical)
N-ch
(VGS=10V)
P-ch
(VGS=–10V)
P-ch
0.6
–8
TC=–40°C
(VDS=–10V)
0.5
25°C
0.15
–6
125°C
RDS (ON) (Ω)
0.10
RDS (ON) (Ω)
0.4
0.3
0.2
ID (A)
–4
0.05
–2
0.1
0
0
2 4 6 8 10
ID (A)
0
0
–2
–4 –6 –8
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
0.3
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=5A
VGS=10V
1.0
P-ch
ID=–4A
VGS=–10V
0.8
RDS (ON) (Ω)
0.2
0.1
RDS (ON) (Ω)
0.6
0.4
0.2
0
–40
0 50 100 150
TC (°C)
0
–40
0
50 100 150
TC (°C)
44

SLA5009
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.2 3.3 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 35 ns ID=5A, VDD 30V, VGS=–10V, 60 ns ID=–4A, VDD –30V, VGS=–10V,
toff 35 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 140 ns ISD=±100mA 150 ns ISD= 100mA
Characteristic curves
Re (yfs) (S)
10
5
1
0.5
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch
(VDS=10V)
P-ch (VDS=–10V)
N-ch
(TC=25°C)
5
20
TC=–40°C
125°C
Re (yfs) (S)
1
25°C
0.5
0.5
TC=–40°C
25°C
125°C
ID (A)
10
5
1
ID (pulse) max
RDS (ON) LIMITED
1ms
10 ms (1shot)
100µs
0.3
0.08 0.5 1
ID (A)
5 10
0.3
–0.1
–0.5 –1
ID (A)
–5 –8
0.1
0.5
1 5 10 50 100
VDS (V)
Capacitance (pF)
1000
500
100
50
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
P-ch
f=1MHz
f=1MHz
700
–10
(TC=25°C)
Ciss
Coss
Crss
Capacitance (pF)
500
Ciss
Coss
100
50
ID (A)
–5
–1
–0.5
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
1ms
100µs
Crss
10
0 10 20 30 40 50
VDS (V)
10
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
10
N-ch
IDR-VSD Characteristics (Typical)
–8
P-ch
40
PT-Ta Characteristics
8
–6
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
6
4
2
10V
5V
VGS=0V
IDR (A)
–4
–2
–10V
–5V
VGS=0V
PT (W)
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
0
0 0.5
1.0 1.5
VSD (V)
0
0 –1 –2 –3 –4 –5
VSD (V)
0
0 50 100 150
Ta (°C)
45

SLA5010
N-channel + P-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 100 –100 V
VGSS ±20 20 V
ID ±4 3 A
ID(pulse) ±8 (PW≤1ms) 6 (PW≤1ms) A
EAS* 16 — mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating ) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
1
Pch
2
8
9
3
7
10
Nch
4
6
11
Characteristic curves
5
12
8
7
6
5
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
–6
8
TC=–40°C
–10V
7
25°C
–5
125°C
–7V
6
7V
–4
5
(VDS=10V)
ID (A)
4
3
6V
ID (A)
–3
–2
–6V
ID (A)
4
3
2
1
VGS=5V
–1
VGS=–5V
2
1
0
0 10
20
VDS (V)
0
0 –5 –10 –15 –20
VDS (V)
0
0 2 4 6 8 10
VGS (V)
0.8
RDS(ON)-ID Characteristics (Typical)
N-ch
(VGS=10V)
P-ch
(VGS=–10V)
P-ch
1.5
–6
TC=–40°C
(VDS=–10V)
0.6
–5
25°C
125°C
RDS (ON) (Ω)
0.4
RDS (ON) (Ω)
1.0
0.5
ID (A)
–4
–3
–2
0.2
–1
0
0
1 2 3 4 5 6 7 8
ID (A)
0
0
–1
–2
–3 –4 –5 –6
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
1.2
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=4A
VGS=10V
2.0
P-ch
ID=–3A
VGS=–10V
1.0
1.5
RDS (ON) (Ω)
0.8
0.6
0.4
0.2
RDS (ON) (Ω)
1.0
0.5
0
–40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
46

SLA5010
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V –100 V ID=–250µA, VGS=0V
IGSS ± 500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=100V, VGS=0V –250 µA VDS=–100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A 0.7 1.1 S VDS=–10V, ID=–3A
RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A 1.1 1.3 Ω VGS=–10V, ID=–3A
Ciss 180 pF VDS=25V, f=1.0MHz, 180 pF VDS=–25V, f=1.0MHz,
Coss 82 pF VGS=0V 85 pF VGS=0V
ton 40 ns ID=4A, VDD 50V, VGS=10V, 90 ns ID=–3A, VDD –50V, VGS=–10V,
toff 40 ns see Fig. 3 on page 16. 80 ns see Fig. 4 on page 16.
VSD 1.2 2.0 V ISD=4A, VGS=0V –4.0 –5.5 V ISD=–3A
trr 250 ns ISD=±100mA 250 ns ISD= 100mA
Characteristic curves
Re (yfs) (S)
5
1
0.5
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch P-ch N-ch
(VDS=10V)
(VDS=–10V)
(TC=25°C)
5
10
TC=–40°C
25°C
125°C
Re (yfs) (S)
1
0.5
TC=–40°C
25°C
125°C
ID (A)
5
1
0.5
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
1ms
100µs
Capacitance (pF)
0.2
0.05 0.1
0.5 1
ID (A)
600
100
50
5 8
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
f=1MHz
f=1MHz
700
–10
P-ch
Ciss
Coss
Capacitance (pF)
0.2
–0.05 –0.1
500
100
50
–0.5 –1
ID (A)
Ciss
Coss
–6
ID (A)
0.1
0.5
–5
–1
–0.5
1 5 10 50 100
ID (pulse) max
RDS (ON) LIMITED
VDS (V)
10 ms (1shot)
(TC=25°C)
1ms
100µs
10
Crss
10
Crss
5
0 10 20 30 40 50
VDS (V)
5
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
8
7
N-ch
IDR-VSD Characteristics (Typical)
–6
–5
P-ch
40
35
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
All Circuits Operating
6
30
IDR (A)
5
4
3
2
1
10V
5V
VGS=0V
0 0 0.5
1.0 1.5
VSD (V)
IDR (A)
–4
–3
–2
–1
–10V
–5V
VGS=0V
0
0 –1 –2 –3 –4
VSD (V)
PT (W)
25
With Infinite Heatsink
20
15
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
47

SLA5011
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID ±5 A
ID(pulse) ±10(PW≤1ms) A
EAS* 2 mJ
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=1.5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
3 5 7 9 11
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250 µA VDS=60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 2.2 3.3 S VDS=10V, ID=5A
RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A
Ciss 300 pF VDS=25V, f=1.0MHz,
Coss 160 pF VGS=0V
ton 35 ns ID=5A, VDD 30V, VGS=10V,
toff 35 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A
trr 150 ns ISD=±100mA
2
4
6
8
10
1
Characteristic curves
12
10
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
10V
7V
10
0.20
8
8
0.15
ID (A)
6
4
6V
ID (A)
6
4
TC=–40°C
RDS (ON) (Ω)
0.10
2
5V
2
25°C
125°C
0.05
VGS=4V
0
0 2 4 6 8 10
VDS (V)
0
0 2 4 6
8
VGS (V)
0
0
2 4 6 8 10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=5A
VGS=0V
10
(VDS=10V)
VGS=10V
0.3
1000
f=1MHz
5
500
Ciss
Re (yfs) (S)
1
TC=–40°C
125°C
25°C
RDS (ON) (Ω)
0.2
0.1
Capacitance (pF)
100
50
Coss
Crss
0.5
IDR (A)
0.3
0.08 0.5 1
10
8
6
4
2
ID (A)
5 10
0
–40
0 50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
10V
5V
VGS=0V
ID (A)
20
10
5
1
0.5
ID (pulse) max
RDS (ON) LIMITED
(TC=25°C)
1ms
10 ms (1shot)
100µs
PT (W)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
48
0 0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
VDS (V)
0
0 50 100 150
Ta (°C)

SLA5012
P-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS –60 V
VGSS 20 V
ID 5 A
ID(pulse) 10 (PW≤1ms) A
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS –60 V ID=–250µA, VGS=0V
IGSS 500 nA VGS= 20V
IDSS –250 µA VDS=–60V, VGS=0V
VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.3 3.5 S VDS=–10V, ID=–5A
RDS(ON) 0.22 0.30 Ω VGS=–10V, ID=–5A
Ciss 570 pF VDS=–25V, f=1.0MHz,
Coss 360 pF VGS=0V
ton 100 ns ID=–5A, VDD –30V, VGS=–10V,
toff 60 ns see Fig. 3 on page 16.
VSD –4.5 –5.5 V ISD=–5A
trr 150 ns ISD= 100mA
1
12
2
4
6
8
10
3
5
7
9
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=–10V)
(VGS=–10V)
–10
–10V
–8
–7V
–10
TC=–40°C
25°C
–8
125°C
0.25
0.20
ID (A)
–6
–4
–6V
ID (A)
–6
–4
RDS (ON) (Ω)
0.15
0.10
–2
–5V
–2
0.05
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 –2 –4 –6 –8
VGS (V)
0
0
–2
–4 –6 –8
ID (A)
–10
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
8
(VDS=–10V)
0.4
ID=–5A
VGS=–10V
2000
VGS=0V
f=1MHz
5
1000
Re (yfs) (S)
1
TC=–40°C
125°C
25°C
RDS (ON) (Ω)
0.3
0.2
0.1
Capacitance (pF)
500
100
Ciss
Coss
0.5
50
Crss
IDR (A)
0.3
–0.1
–10
–8
–6
–4
–2
–0.5 –1
ID (A)
–5 –10
0
–40
0 50 100 150
TC (°C)
30
0 ---10 ---20 ---30 ---40 ---50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
–10V
–5V
VGS=0V
ID (A)
–20
–10
–5
–1
–0.5
ID (pulse) max
RDS(ON) LIMITED
10 ms (1shot)
(TC=25°C)
1ms
100µs
PT (W)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
0
0 –1 –2 –3 –4
VSD (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
0
0 50 100 150
Ta (°C)
49

SLA5013
N-channel + P-channel
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 100 –100 V
VGSS ±20 20 V
ID ±5 5 A
ID(pulse) ±10 (PW≤1ms) 10 (PW≤1ms) A
EAS* 30 — mJ
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch
12
8
11
2
9
4
Nch
1
5
Characteristic curves
3
6
10
10V
7V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
(VDS=10V)
–10
10
–10V
8
–8
8
ID (A)
6
4
6V
ID (A)
–6
–4
–7V
–6V
ID (A)
6
4
TC=–40°C
5V
25°C
2
–2
–5V
2
125°C
VGS=4V
0
0 2 4 6 8 10
VDS (V)
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 2 4 6 8
VGS (V)
0.4
0.3
RDS(ON)-ID Characteristics (Typical)
N-ch P-ch P-ch
(VGS=10V)
(VGS=–10V)
1.0
–10
0.8
–8
(VDS=–10V)
25°C
TC=–40°C
125°C
RDS (ON) (Ω)
0.2
RDS (ON) (Ω)
0.6
0.4
ID (A)
–6
–4
0.1
0.2
–2
0
0
2
4 6 8 10
ID (A)
0
0
–2
–4 –6 –8
ID (A)
–10
0
0 –2 –4 –6 –8 –10
VGS (V)
0.5
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=5A
VGS=10V
1.2
P-ch
ID=–5A
VGS=–10V
0.4
1.0
RDS (ON) (Ω)
0.3
0.2
RDS (ON) (Ω)
0.8
0.6
0.4
0.1
0.2
0
–40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
50

SLA5013
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V –100 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=100V, VGS=0V –250 µA VDS=–100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.4 3.7 S VDS=10V, ID=5A 0.9 2.0 S VDS=–10V, ID=–5A
RDS(ON) 0.27 0.30 Ω VGS=10V, ID=5A 0.55 0.7 Ω VGS=–10V, ID=–5A
Ciss 350 pF VDS=25V, f=1.0MHz, 300 pF VDS=–25V, f=1.0MHz,
Coss 130 pF VGS=0V 200 pF VGS=0V
ton 60 ns ID=5A, VDD 50V, VGS=10V, 150 ns ID=–5A, VDD –50V, VGS=–10V,
toff 40 ns see Fig. 3 on page 16. 200 ns see Fig. 4 on page 16.
VSD 1.1 1.8 V ISD=5A, VGS=0V –4.5 –5.5 V ISD=–5A, VGS=0V
trr 330 ns ISD=±100mA 220 ns ISD= 100mA
Characteristic curves
7
5
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch P-ch N-ch
(VDS=10V)
(VDS=–10V)
(TC=25°C)
5
20
ID (pulse) max
10
100µs
Re (yfs) (S)
1
TC=–40°C
125°C
25°C
Re (yfs) (S)
1
TC=–40°C
125°C
25°C
ID (A)
5
1
0.5
RDS (ON) LIMITED
10 ms (1shot)
1ms
0.5
0.5
0.3
0.05 0.1
0.5 1
ID (A)
5 10
0.3
–0.05 –0.1
–0.5 –1
ID (A)
–5 –10
0.1
0.5
1 5 10 50 100
VDS (V)
1000
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
f=1MHz
f=1MHz
P-ch
1000
–20
(TC=25°C)
500
Ciss
500
–10
ID (pulse) max
100µs
Capacitance (pF)
100
50
Coss
Capacitance (pF)
100
Ciss
Coss
ID (A)
–5
–1
–0.5
RDS (ON) LIMITED
10 ms (1shot)
1ms
Crss
50
Crss
10
0 10 20 30 40 50
VDS (V)
20
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
10
N-ch
IDR-VSD Characteristics (Typical)
–10
P-ch
40
PT-Ta Characteristics
8
–8
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
6
4
2
10V
5V
VGS=0V
0
0 0.5
1.0 1.5
VSD (V)
IDR (A)
–6
–4
–2
–10V
–5V
VGS=0V
0
0 –1 –2 –3 –4
VSD (V)
PT (W)
25
20
With Infinite Heatsink
15
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
51

SLA5015
P-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS –60 V
VGSS 20 V
ID 4 A
ID(pulse) 8 (PW≤1ms) A
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits op1erating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS –60 V ID=–250µA, VGS=0V
IGSS 500 nA VGS= 20V
IDSS –250 µA VDS=–60V, VGS=0V
VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 270 pF VDS=–25V, f=1.0MHz,
Coss 170 pF VGS=0V
ton 60 ns ID=–4A, VDD –30V, VGS=–10V,
toff 60 ns see Fig. 4 on page 16.
VSD –4.5 –5.5 V ISD=–4A
trr 150 ns ISD= 100mA
1
12
2
4
6
8
10
3
5
7
9
11
Characteristic curves
ID (A)
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=–10V)
(VGS=–10V)
–8
–10V
–6
–7V
–4
–6V
–2
–5V
ID (A)
–8
25°C
–6
–4
–2
TC=–40°C
125°C
RDS (ON) (Ω)
0.6
0.5
0.4
0.3
0.2
0.1
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 –2 –4 –6 –8 –10
VGS (V)
0
0
–2
–4 –6 –8
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=–4A
VGS=0V
5
(VDS=–10V)
VGS=–10V
1.0
700
f=1MHz
500
Re (yfs) (S)
1
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.8
0.6
0.4
Capacitance (pF)
100
50
Ciss
Coss
0.5
0.2
Crss
IDR (A)
0.3
–0.1
–0.5 –1
ID (A)
–5 ---8
0
–40
0 50 100 150
TC (°C)
10
0 –10 –20 –30 –40 –50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(TC=25°C)
–8
–6
–4
–2
–10V
–5V
VGS=0V
ID (A)
–10
–5
–1
–0.5
ID (pulse) max
RDS (ON) LIMITED
1ms
10 ms (1shot)
100µs
PT (W)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
52
0
0 –1 –2 –3 –4 –5
VSD (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
0
0 50 100 150
Ta (°C)

SLA5017
N-channel + P-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±10 20 V
ID ±5 4 A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS* 2 — mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
1
Pch
2
8
9
3
7
10
Nch
4
6
11
5
12
Characteristic curves
10
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
(VDS=10V)
–8
10
–10V
8
10V
4V
–6
8
ID (A)
6
4
2
3.5V
VGS=3V
ID (A)
–4
–2
–7V
–6V
ID (A)
6
4
2
TC=–40°C
25°C
125°C
–5V
0
0 2 4 6 8 10
VDS (V)
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0.3
RDS(ON)-ID Characteristics (Typical)
N-ch P-ch P-ch
(VGS=–10V)
0.6
–8
TC=–40°C
(VDS=–10V)
0.5
25°C
RDS (ON) (Ω)
0.2
0.1
4V
VGS=10V
RDS (ON) (Ω)
0.4
0.3
0.2
ID (A)
–6
–4
125°C
–2
0.1
0
0
1 2 3 4 5 6 7 8 9 10
ID (A)
0
0
–2
–4 –6 –8
ID (A)
–0
0 –2 –4 –6 –8 –10
VGS (V)
RDS(ON)-TC Characteristics (Typical)
0.4
N-ch
(ID=2.5A)
1.0
P-ch
ID=–4A
VGS=–10V
0.3
4V
0.8
RDS (ON) (Ω)
0.2
VGS=10V
RDS (ON) (Ω)
0.6
0.4
0.1
0.2
0
–40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
54

SLA5017
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±10V 500 nA VGS= 20V
IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 3.1 4.6 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON)
0.17 0.22 Ω VGS=10V, ID=5A
0.38 0.55 Ω VGS=–10V, ID=–4A
0.25 0.30 Ω VGS=4V, ID=5A
Ciss 400 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 80 ns ID=5A, VDD 30V, VGS=5V, 60 ns ID=–4A, VDD –30V, VGS=–10V,
toff 50 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 150 ns ISD=±100mA 150 ns ISD= 100mA
Characteristic curves
10
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch P-ch N-ch
(VDS=10V)
(VDS=–10V)
(TC=25°C)
5
20
100µs
Re (yfs) (S)
5
1
TC=–40°C
125°C
25°C
Re (yfs) (S)
1
TC=–40°C
25°C
125°C
ID (A)
ID (pulse) max
10
5
1
0.5
RDS (ON) LIMITED
10 ms (1shot)
1ms
0.5
0.5
0.3
0.05 0.1
0.5 1
ID (A)
5 10
0.3
–0.1
–0.5 –1
ID (A)
–5 –8
0.1
0.5
1 5 10 50 100
VDS (V)
Capacitance (pF)
1000
500
100
50
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
P-ch
f=1MHz
f=1MHz
700
–10
Ciss
Coss
Crss
Capacitance (pF)
500
100
50
Ciss
Coss
Crss
ID (A)
–5
–1
–0.5
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
(TC=25°C)
1ms
100µs
10
0 10 20 30 40 50
VDS (V)
10
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
10
N-ch
IDR-VSD Characteristics (Typical)
–8
P-ch
40
PT-Ta Characteristics
8
–6
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
IDR (A)
6
4
10V
4V
IDR (A)
–4
–10V
PT (W)
25
20
15
2
VGS=0V
–2
–5V
VGS=0V
10
Without Heatsink
5
0
0 0.5
1.0 1.5
VSD (V)
0
0 –1 –2 –3 –4 –5
VSD (V)
0
0 50 100 150
Ta (°C)
55

SLA5018
N-channel + P-channel
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±10 20 V
ID ±5 4 A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS* 2 — mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10 7
Pch
12
8
11
2
9
4
Nch
1
5
3
6
Characteristic curves
10
8
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
(VDS=10V)
–8
10
–10V
8
4V
–6
ID (A)
6
4
2
3.5V
VGS=3V
ID (A)
–4
–2
–7V
–6V
ID (A)
6
4
2
TC=–40°C
25°C
125°C
–5V
0
0 2 4 6 8 10
VDS (V)
VGS=–4V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0.3
RDS(ON)-ID Characteristics (Typical)
N-ch P-ch P-ch
(VGS=–10V)
0.6
–8
TC=–40°C
(VDS=–10V)
RDS (ON) (Ω)
0.2
0.1
4V
VGS=10V
RDS (ON) (Ω)
0.5
0.4
0.3
0.2
ID (A)
–6
–4
25°C
125°C
–2
0.1
0
0
1 2 3 4 5 6 7 8 9 10
ID (A)
0
0
–2
–4 –6 –8
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
0.4
N-ch
RDS(ON)-TC Characteristics (Typical)
(ID=2.5A)
0.8
P-ch
ID=–2A
VGS=–10V
0.3
4V
0.6
RDS (ON) (Ω)
0.2
VGS=10V
RDS (ON) (Ω)
0.4
0.1
0.2
0
–40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
56

SLA5018
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±10V 500 nA VGS= 20V
IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 3.1 4.6 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON)
0.17 0.22 Ω VGS=10V, ID=2.5A
0.38 0.55 Ω VGS=–10V, ID=–2A
0.25 0.30 Ω VGS=4V, ID=2.5A
Ciss 400 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 80 ns ID=5A, VDD 30V, VGS=5V, 60 ns ID=–4A, VDD –30V, VGS=–10V,
toff 50 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 150 ns ISD=±100mA 150 ns ISD= 100mA
Characteristic curves
10
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch P-ch N-ch
(VDS=10V)
(VDS=–10V)
(TC=25°C)
5
20
100µs
Re (yfs) (S)
5
1
TC=–40°C
125°C
25°C
Re (yfs) (S)
1
TC=–40°C
25°C
125°C
ID (A)
ID (pulse) max
10
5
1
0.5
RDS (ON) LIMITED
1ms
10 ms (1shot)
0.5
0.5
0.3
0.05 0.1
0.5 1
ID (A)
5 10
0.3
–0.1
–0.5 –1
ID (A)
–5 –8
0.1
0.5
1 5 10 50 100
VDS (V)
Capacitance (pF)
1000
500
100
50
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
P-ch
f=1MHz
f=1MHz
(TC=25°C)
700
–10
Ciss
Coss
Crss
Capacitance (pF)
500
Ciss
Coss
100
50
ID (A)
–5
–1
–0.5
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
1ms
100µs
Crss
10
0 10 20 30 40 50
VDS (V)
10
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
10
N-ch
IDR-VSD Characteristics (Typical)
–8
P-ch
40
PT-Ta Characteristics
8
–6
35
30
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
6
4
10V
IDR (A)
–4
–10V
PT (W)
25
20
15
2
4V
VGS=0V
–2
–5V
VGS=0V
10
Without Heatsink
5
0 0 0.5
1.0 1.5
VSD (V)
0
0 –1 –2 –3 –4 –5
VSD (V)
0
0 50 100 150
Ta (°C)
57

SLA5021
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±10 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms) A
EAS* 60 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=10mH, ID=3A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditins
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 4 6 S VDS=10V, ID=5A
RDS(ON)
0.18 0.19 Ω VGS=10V, ID=2.5A
0.19 0.25 Ω VGS=4V, ID=2.5A
Ciss 880 pF VDS=25V, f=1.0MHz,
Coss 240 pF VGS=0V
ton 90 ns ID=5A, VDD 50V, VGS=5V,
toff 75 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V
trr 500 ns ISD=±100mA
3
5
7
9
11
2
4
6
8
10
1
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
10
10
0.25
10V
8
4.0V
3.5V
8
0.20
VGS=4V
ID (A)
6
4
3.0V
ID (A)
6
4
TC=–40°C
RDS (ON) (Ω)
0.15
0.10
VGS=10V
25°C
2
VGS=2.5V
2
125°C
0.05
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0
0
2
4 6 8 10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
(ID=2.5A)
f=1MHz
20
0.4
3000
10
0.3
1000
Ciss
Re (yfs) (S)
5
1
0.5
25°C
125°C
TC=–40°C
RDS (ON) (Ω)
0.2
0.1
VGS=4V
VGS=10V
Capacitance (pF)
500
100
50
Coss
Crss
IDR (A)
0.3
0.05 0.1
0.5 1
ID (A)
10
5 10
0
–40
0 50 100 150
TC (°C)
20
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(TC=25°C)
8
6
4
2
10V
4V
VGS=0V
ID (A)
20
10
5
1
0.5
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
1ms
100µs
PT (W)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
58
0
0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
VDS (V)
0
0 50 100 150
Ta (°C)

SLA5022
PNP Darlington + N-channel MOSFET
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VM 60 V
IO ±6 (PW≤100ms) A
IOP ±10 (PW≤1ms) A
VGSS ±10 V
IB –0.5 A
PT
5 (Ta=25°C)
W
35 (Tc=25°C)
θ j-a 25 °C/W
θ j-c 3.57 °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics (Sink : N channel MOSFET) (Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3.1 4.6 S VDS=10V, ID=4A
RDS(ON)
0.17 0.22 VGS=10V, ID=4A
Ω
0.25 0.30 VGS=4V, ID=4A
Ciss 400 pF VDS=25V, f=1.0MHz,
Coss 160 pF VGS=0V
ton 80 ns ID=4A, VDD=30V,
toff 50 ns VGS=5V
VSD 1.1 1.5 V ISD=4A, VGS=0V
trr 150 ns IF=±100mA
1
VM
R1
R2
2
8
9
3
OUT1
7
OUT2
10
OUT3
4
6
11
R1: 3kΩ typ R2: 80Ω typ
5 12
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)
10
10
(VDS=10V)
0.3
10V
ID (A)
8
6
4
4V
3.5V
ID (A)
8
6
4
TC=–40°C
RDS (ON) (Ω)
0.2
0.1
4V
VGS=10V
2
VGS=3V
2
25°C
125°C
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0
0
1 2 3 4 5 6 7 8 9 10
ID (A)
ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)
VGS=0V
(ID=2.5A)
10
0.4
1000
f=1MHz
VDS=10V
Re (yfs) (S)
5
1
TC=–40°C
125°C
25°C
RDS (ON) (Ω)
0.3
0.2
4V
VGS=10V
Capacitance (pF)
500
100
50
Ciss
Coss
0.1
Crss
0.5
0.3
0.05 0.1 0.5 1
5 10
0
–40 0 50 100 150
ID (A)
TC (°C)
VSD-IDR Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
10
20
10
0 10 20 30 40 50
VDS (V)
IDR (A)
8
6
4
10V
4V
ID (A)
10
5
1
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
1ms
100µs
0.5
2
VGS=0V
0 0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
VDS (V)
60

SLA5022
Electrical characteristics (Source: PNP transistor) (Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–60V
IEBO –1 –5 mA VEB=–6V
VCEO –60 V IC=–25mA
hFE 2000 5000 12000 VCE=–4V, IC=–4A
VCE(sat) –1.5 V
VBE(sat) –2.0 V
IC=–4A, IB=–10mA
VFEC 2.0 V IFEC=4A
trr 1.0 µs IF=±0.5A
ton 1.0 µs VCC –25V,
tstg 1.4 µs IC=–4A,
tf 0.6 µs IB1=–IB2=–10mA
fT 120 MHz VCE=–12V, IE=1A
Cob 150 pF VCB=–10V, f=1MHz
Characteristic curves (PNP)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–12
IB=–10mA
–10
–5mA
(VCE=–4V)
(VCE=–4V)
20000
20000
–3mA
10000
10000
–8
–2mA
5000
typ
5000
IC (A)
–6
–4
–1mA
hFE
1000
hFE
1000
Ta=125°C
75°C
25°C
–30°C
–2
–0.5mA
500
500
0
0 –2 –4 –6
VCE (V)
200
–0.1 –0.5 –1 –5 –10
IC (A)
200
–0.1 –0.5 –1 –5
IC (A)
–10
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=–4V)
–3
–3
–12
–10
VCE (sat) (V)
–2
–1
125°C
Ta=–30°C
VCE (sat) (V)
–2
–1
IC=–2A
IC=–4A
IC=–8A
IC (A)
–8
–6
–4
–2
75°C
Ta=125°C
25°C
–30°C
0
–0.1 –0.5
75°C 25°C –20
–1 –5 –10
IC (A)
0
–0.3 –0.5
–1 –5 –10 –50 –100 –200
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics
20
–20
40
10
–10
1ms
100µs
35
With Silicone Grease
Natural Cooling
All Circuits Operating
10ms
–5
30
θch-c (°C / W)
5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
IC (A)
–1
–0.5
Single Pulse
Without Heatsink
Ta=25°C
–0.1
–3 –5 –10
VCE (V)
–50
–100
PT (W)
25
20
With Infinite Heatsink
15
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
61

SLA5023
PNP Darlington + N-channel MOSFET
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VM 100 V
IO ±6 (PW≤100ms) A
IOP ±8 (PW≤1ms) A
VGSS ±10 V
IB –0.5 A
5 (Ta=25°C)
0.47 0.55 VGS=10V, ID=2A
PT W RDS(ON) Ω
35 (Tc=25°C)
0.60 0.78 VGS=4V, ID=2A
θ j-a 25 °C/W
θ j-c 3.57 °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
R1
R2
1
VM
Electrical characteristics (Sink: N-channel MOSFET) (Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A
Ciss 230 pF VDS=25V, f=1.0MHz,
Coss 60 pF VGS=0V
ton 60 ns ID=4A, VDD=50V,
toff 50 ns VGS=10V
VSD 1.2 2.0 V ISD=4A, VGS=0V
trr 250 ns IF=±100mA
2
8
9
3
OUT1
7
OUT2
10
OUT3
4
6
11
R1: 3kΩ typ R2: 80Ω typ
5 12
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)
8
8
0.8
ID (A)
7
6
5
4
3
2
1
10V
VGS=3V
4.5V
0
0 2 4 6 8 10
VDS (V)
4V
3.5V
ID (A)
7
6
5
4
3
2
1
VDS=10V
ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)
VGS=0V
(ID=2A)
f=1MHz
7
5
VDS=10V
TC=–40°C
125°C
25°C
0
0 2 4 6 8
VGS (V)
1.2
1.0
RDS (ON) (Ω)
0.6
0.4
0.2
0
0
700
500
VGS=4V
1 2 3
VGS=10V
4 5 6 7 8
ID (A)
Ciss
Re (yfs) (S)
1
TC=40°C
125°C
25°C
RDS (ON) (Ω)
0.8
0.6
0.4
VGS=4V
VGS=10V
Capacitance (pF)
100
50
Coss
0.5
0.2
10
Crss
0.3
0.05 0.1
0.5 1
5 8
5
0 10 20 30 40 50
VDS (V)
TC (°C)
ID (A)
VSD-IDR Characteristics (Typical) Safe Operating Area (SOA) θ ch-c-PW Characteristics
8
0
–40
10
0 50 100 150
(Tc=25°C)
20
7
5
I D (pulse) max
100µs
10
10 ms (1shot)
IDR (A)
6
5
4
3
ID (A)
1
0.5
RDS (ON)
LIMITED
1ms
θ ch-c (°C / W)
5
1
62
2
10V
4V
1
0
0 0.5
1.0 1.5
VSD (V)
VGS=0V
0.1
0.5
1 5 10 50 100
VDS (V)
0.5
0.2
0.1 0.5 1 5 10 50100
5001000
500010000
PW (mS)

SLA5023
Electrical characteristics (Source: PNP transistor) (Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–100V
IEBO –10 mA VEB=–6V
VCEO –100 V IC=–10mA
hFE 2000 5000 12000 VCE=–4V, IC=–3A
VCE(sat) –1.5 V
VBE(sat) –2.2 V
IC=–3A, IB=–6mA
VFEC 1.3 V IFEC=–1A
trr 2.0 µs IF=±100mA
ton 0.6 µs VCC –30V
tstg 1.6 µs IC=–3A
tf 0.5 µs IB1=–IB2=–6mA
fT 90 MHz VCE=–12V, IE=1A
Cob 100 pF VCB=–10V, f=1MHz
Characteristic curves (PNP)
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–8
IB=–4mA
–7
–6
–5
–4
–3
–2mA
–1.2mA
–0.8mA
–0.6mA
(VCE=–4V)
20000
20000
10000
10000
typ
5000
5000
1000
1000
500
500
hFE
hFE
75°C
Ta=125°C
25°C
–30°C
(VCE=–4V)
–2
–0.4mA
–1
0
0 –1 –2 –3 –4 –5
VCE (V)
100
50
30
–0.03 –0.05 –0.1 –0.5 –1 –5
IC (A)
–8
100
50
30
–0.03 –0.05 –0.1 –0.5 –1 –5 –8
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=–4V)
–3
–3
–8
VCE (sat) (V)
–2
–1
75°C 25°C Ta=–30°C
125°C
VCE (sat) (V)
–2
–1
IC=–1A
IC=–3A
IC=–5A
IC (A)
–6
–4
–2
Ta=125°C
75°C
25°C
–30°C
0
–0.3 –0.5
–1 –5 –10
IC (A)
0
–0.2 –0.5 –1 –5 –10 –50 –100 –500
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics
20
–10
40
10
–5
1ms
100µs
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
10ms
θ ch-c (°C / W)
5
IC (A)
–1
–0.5
PT (W)
25
20
15
With Infinite Heatsink
1
0.5
1 5 10 50 100 500 1000
PW (mS)
–0.1
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10
VCE (V)
–50
–100
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
63

SLA5024
P-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS –60 V
VGSS 20 V
ID 4 A
ID(pulse) 8 (PW≤1ms) A
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between finand lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS –60 V ID=–250µA, VGS=0V
IGSS 500 nA VGS= 20V
IDSS –250 µA VDS=–60V, VGS=0V
VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 270 pF VDS=–25V, f=1.0MHz,
Coss 170 pF VGS=0V
ton 60 ns ID=–4A, VDD –30V, VGS=–10V,
toff 60 ns see Fig. 4 on page 16.
VSD –4.4 –5.5 V ISD=–4A
trr 150 ns ISD= 100mA
3
6
7
10
1
5
8
12
2
4
9
11
Characteristic curves
ID (A)
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=–10V)
(VGS=–10V)
–8
–10V
–6
–7V
–4
–6V
–2
VGS=–4V
–5V
ID (A)
–8
25°C
–6
–4
–2
TC=–40°C
125°C
RDS (ON) (Ω)
0.6
0.5
0.4
0.3
0.2
0.1
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 –2 –4 –6 –8 –10
VGS (V)
0
0
–2
–4 –6 –8
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=–4A
VGS=0V
5
(VDS=–10V)
VGS=–10V
1.0
700
f=1MHz
500
0.8
Ciss
Re (yfs) (S)
1
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.6
0.4
Capacitance (pF)
100
50
Coss
0.5
0.2
Crss
0.3
–0.1
–0.5 –1
ID (A)
–5 –8
0
–40
0 50 100 150
TC (°C)
10
0 –10 –20 –30 –40 –50
VDS (V)
IDR (A)
–8
–6
–4
–2
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
–10V
–5V
VGS=0V
ID (A)
–10
–5
–1
–0.5
(TC=25°C)
40
ID (pulse) max
35
RDS (ON) LIMITED
10 ms (1shot)
1ms
100µs
PT (W)
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
64
0
0 –1 –2 –3 –4 –5
VSD (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
0
0 50 100 150
Ta (°C)

SLA5029
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID ±4 A
ID(pulse) ±8 (PW≤1ms) A
EAS* 1 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=1.2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 1.5 2.4 S VDS=10V, ID=4A
RDS(ON) 0.33 0.45 Ω VGS=10V, ID=4A
Ciss 120 pF VDS=25V, f=1.0MHz,
Coss 60 pF VGS=0V
ton 115 ns ID=4A, VDD 30V, VGS=10V,
toff 35 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=4A
trr 100 ns ISD=±100mA
3
5
7
9
11
2
4
6
8
10
1
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
65

SLA5031
N-channel
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±10 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms) A
EAS* 2 mJ
IF 5 (PW≤0.5ms, Du≤25%) A
IFSM 10 (PW≤10ms, Single pulse) A
VR 120 V
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=1.7A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
1
2
5
3
4
8
9
10
12
11
Electrical characteristics
(Ta=25°C)
Symbol
min
Specification
typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3.1 4.6 S VDS=10V, ID=5A
RDS(ON)
0.17 0.22 Ω VGS=10V, ID=2.5A
0.25 0.30 Ω VGS=4V, ID=2.5A
Ciss 400 pF VDS=25V, f=1.0MHz,
Coss 160 pF VGS=0V
ton 80 ns ID=5A, VDD 30V, VGS=5V,
toff 50 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V
trr 150 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol
min
Speciication
typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
6
7
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
10
10
0.3
ID (A)
8
6
4
2
10V
4V
3.5V
VGS=3V
ID (A)
8
6
4
2
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.2
0.1
4V
VGS=10V
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0
0
1 2 3 4 5 6 7 8 9 10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
(ID=2.5A)
f=1MHz
10
0.4
1000
Re (yfs) (S)
5
1
TC=–40°C
125°C
25°C
RDS (ON) (Ω)
0.3
0.2
0.1
4V
VGS=10V
Capacitance (pF)
500
100
50
Ciss
Coss
Crss
0.5
0.3
0.05 0.1
0.5 1
ID (A)
5 10
0
–40
0 50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR (A)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
10
8
6
10V
4
4V
2
VGS=0V
ID (A)
20
10
5
1
0.5
(TC=25°C)
ID (pulse) max
RDS (ON) LIMITED
1ms
10 ms (1shot)
100µs
PT (W)
40
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
66
0 0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
VDS (V)
0
0 50 100 150
Ta (°C)

SLA5037
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±10 A
ID(pulse) ±40 (PW≤1ms) A
EAS* 200 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
40 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=3mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specifications
min typ max
Unit Conditions
V(BR)DSS 100 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 8 13 S VDS=10V, ID=5A
RDS(ON)
60 80 mΩ VGS=10V, ID=5A
75 95 mΩ VGS=4V, ID=5A
Ciss 1630 pF VDS=10V, f=1.0MHz,
Coss 480 pF VGS=0V
td(on) 30 ns ID=5A,
tr 45 ns VDD 50V,
td(off) 100 ns RL=10Ω, VGS=5V,
tf 40 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=10A, VGS=0V
trr 300 ns ISD=±100mA
3
6
7
10
1
4
9
12
2
5
8
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
10
10
3V
100
2.8V
8
4V
8
80
VGS=4V
ID (A)
6
4
10V
2.6V
2.4V
ID (A)
6
4
TC=–40°C
25°C
RDS (ON) (mΩ)
60
40
VGS=10V
2
2.2V
2
125°C
20
VGS=2V
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
30
(VDS=10V)
150
(ID=5A)
0
0
5000
2 4 6 8
ID (A)
VGS=0V
f=1MHz
10
10
TC=–40°C
25°C
VGS=4V
Ciss
Re (yfs) (S)
5
125°C
RDS (ON) (mΩ)
100
50
VGS=10V
Capacitance (pF)
1000
500
Coss
1
0.5
100
Crss
IDR (A)
0.3
0.05
10
0.1 0.5 1
ID (A)
5
10
0
–40
0 50 100 150
TC (°C)
50
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
8
6
4
5V
VGS=0V
ID (A)
50
10
5
ID (pulse) max
RDS (ON) LIMITED
10 ms (1shot)
(TC=25°C)
1ms
100µs
PT (W)
40
35
30
25
20
15
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
10
2
1
Without Heatsink
5
0 0 0.5 1.0 1.5
VSD (V)
0.5
0.5 1 5 10 50 100
VDS (V)
0
0 50 100 150
Ta (°C)
67

SLA5040
N-channel
With built-in flywheel diode
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±4 A
ID(pulse) ±8 (PW≤1ms) A
EAS* 16 mJ
IF 4 (PW≤0.5ms, Du≤25%) A
IFSM 8 (PW≤10ms, Single pulse) A
VR 120 V
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
2
3
4
9
10
11
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250 µA VDS=100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A
RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A
Ciss 180 pF VDS=25V, f=1.0MHz,
Coss 82 pF VGS=0V
ton 40 ns ID=4A, VDD=50V, VGS=10V,
toff 40 ns see Fig. 3 on page 16.
VSD 1.2 2.0 V ISD=4A, VGS=0V
trr 250 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
1
5
8
12
6
Characteristic curves
7
68

SLA5041
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 200 V
VGSS ±20 V
ID ±10 A
ID(pulse) ±40 (PW≤1ms, Du≤1%) A
EAS* 120 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
40 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 200 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=200V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 5.0 8.5 S VDS=10V, ID=5A
RDS(ON) 130 175 mΩ VGS=10V, ID=5A
Ciss 850 pF VDS=10V, f=1.0MHz,
Coss 550 pF VGS=0V
td(on) 20 ns ID=5A,
tr 25 ns VDD 100V,
td(off) 70 ns RL=20Ω, VGS=10V,
tf 70 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=10A, VGS=0V
trr 500 ns ISD=±100mA
3
6
7
10
1
4
9
12
2
5
8
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
10
10
200
8
10V
5.5V
5V
8
150
ID (A)
6
4
2
6V
4.5V
VGS=4V
ID (A)
6
4
2
125°C
–40°C
25°C
RDS (ON) (mΩ)
100
50
0
0 2 4 6
VDS (V)
8 10
0
0 2 4
VGS (V)
6
8
0
0 2
4 6 8 10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=5A
VGS=0V
(VDS=10V)
VGS=10V
f=1MHz
20
400
3000
Re (yfs) (S)
10
5
1
TC=–40°C
TC=125°C
TC=25°C
RDS (ON) (mΩ)
300
200
100
Capacitance (pF)
1000
500
100
50
Ciss
Coss
Crss
0.5
0.3
0.05 0.1 0.5 1
ID (A)
10
0
–40
0
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
8
5 10
50
10
5
ID (pulse) max
RDS (ON) LIMITED
50
TC (°C)
1ms
100
100µs
150
(TC=25°C)
10
0 10 20 30 40 50
VDS (V)
40
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
10ms (1shot)
With Infinite Heatsink
IDR (A)
6
4
2
VGS=5.10V
VGS=0V
ID (A)
1
0.5
0.1
0.05
PT (W)
25
20
15
10
Without Heatsink
5
0
0 0.5 1.0 1.5
VSD (V)
0.01
0.5 1 5 10 50 100 500
VDS (V)
0
0 50 100 150
Ta (°C)
69

SLA5042
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms, Du≤1%) A
EAS* 70 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50Ω,see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 4 6 S VDS=10V, ID=2.5A
RDS(ON)
130 185 mΩ VGS=10V, ID=2.5A
155 230 mΩ VGS=4V, ID=2.5A
Ciss 740 pF VDS=10V, f=1.0MHz,
Coss 240 pF VGS=0V
td(on) 20 ns ID=2.5A,
tr 30 ns VDD 50V,
td(off) 60 ns RL=20Ω, VGS=5V,
tf 20 ns see Fig. 3 on page 16.
VSD 1.0 1.4 V ISD=5A, VGS=0V
trr 180 ns ISD=±100mA
3
5
7
9
11
2
4
6
8
10
1
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
5
5
200
3V
4
4V
2.8V
4
150
VGS=4V
ID (A)
3
2
10V
2.6V
2.4V
ID (A)
3
2
TC=–40°C
25°C
RDS (ON) (mΩ)
100
VGS=10V
1
VGS=2.2V
1
125°C
50
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
(VDS=10V)
(ID=2.5A)
VGS=0V
f=1MHz
10
350
0
0
2000
1 2 3 4 5
ID (A)
Re (yfs) (S)
5
1
TC=–40°C
25°C
125°C
RDS (ON) (mΩ)
300
250
200
150
VGS=4V
VGS=10V
Capacitance (pF)
1000
500
100
Ciss
Coss
0.5
100
50
Crss
0.3
0.05
0.1 0.5 1
ID (A)
5
50
–40
0 50 100 150
TC (°C)
20
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
5
20
40
IDR (A)
4
3
2
10V
5V
ID (A)
10
5
1
ID (pulse) max
RDS (ON) LIMITED
10ms (1shot)
1ms
100µs
PT (W)
35
30
25
20
15
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
1
VGS= 0V
0
0 0.5 1.0 1.5
VSD (V)
0.5
TC=25°C
1-Circuit Operation
0.1
0.5 1 5 10 50 100 200
VDS (V)
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
70

SLA5044
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 250 V
VGSS ±20 V
ID ±10 A
ID(pulse) ±40 (PW≤1ms, Du≤1%) A
EAS* 120 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
40 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2.2mH, ID=10A, unclamped, RG=50Ω,see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 250 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=250V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 5.0 8.5 S VDS=10V, ID=5A
RDS(ON) 200 250 mΩ VGS=10V, ID=5A
Ciss 850 pF VDS=10V, f=1.0MHz,
Coss 550 pF VGS=0V
td(on) 20 ns ID=5A,
tr 25 ns VDD 100V,
td(off) 70 ns RL=20Ω, VGS=10V,
tf 70 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=10A, VGS=0V
trr 700 ns ISD=±100mA
3
6
7
10
1
4
9
12
2
5
8
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
10
10
300
8
10V
5V
6V
8
250
ID (A)
6
4
2
VGS=4V
4.5V
ID (A)
6
4
2
TC=–40°C
TC=25°C
TC=125°C
RDS (ON) (mΩ)
200
150
100
50
0
0 2 4 6
VDS (V)
8 10
0
0 2 4
VGS (V)
6
8
0
0
2
4 6
ID (A)
8
10
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
20
(VDS=10V)
500
ID=5A
VGS=10V
3000
VGS=0V
f=1MHz
10
400
1000
Ciss
Re (yfs) (S)
5
1
TC=–40°C
TC=25°C
TC=125°C
RDS (ON) (mΩ)
300
200
Capacitance (pF)
500
100
50
Coss
100
Crss
0.5
0.3
0.05 0.1
0.5
ID (A)
1 5 10
0
–40 0
50 100 150
TC (°C)
10
0 10 20 30
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(TC=25°C)
10
8
50
10
5
ID (pulse) max
RDS (ON) LIMITED
1ms
100µs
40
35
30
40 50
With Silicone Grease
Natural Cooling
All Circuits Operating
10ms (1shot)
With Infinite Heatsink
IDR (A)
6
4
2
5.10V
VGS=0V
ID (A)
1
0.5
0.1
0.05
PT (W)
25
20
15
10
Without Heatsink
5
0
0 0.5 1.0 1.5
VSD (V)
0.01
0.5 1 5 10 50 100
VDS (V)
500
0
0 50 100 150
Ta (°C)
71

SLA5046
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 200 V
VGSS ±20 V
ID ±7 A
ID(pulse) ±15 (PW≤1ms, Du≤1%) A
EAS* 55 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 200 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=200V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A
RDS(ON) 270 350 mΩ VGS=10V, ID=3.5A
Ciss 450 pF VDS=10V,
Coss 280 pF f=1.0MHz,
Crss 120 pF VGS=0V
td(on) 20 ns ID=3.5A,
tr 30 ns VDD 100V,
td(off) 55 ns RL=28.6Ω, VGS=10V,
tf 75 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V
trr 450 ns ISD=±100mA
3
5
7
9
11
2
4
6
8
10
1
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
7
6V
7
0.5
6
10V
5.5V
6
0.4
5
5
ID (A)
4
3
5V
ID (A)
4
3
TC=–40°C
RDS (ON) (Ω)
0.3
0.2
2
1
4.5V
2
1
25°C
125°C
0.1
VGS=4V
0
0 2 4 6 8
VDS (V)
10
0
0 2 4
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
10
(VDS=10V)
1.0
6
8
ID=3.5A
VGS=10V
0
0 1 2 3 4
ID (A)
2000
1000
5
6 7
VGS=0V
f=1MHZ
Re (yfs) (S)
5
1
Tc=–40°C
25°C
125°C
RDS (ON) (Ω)
0.8
0.6
0.4
Capacitance (pF)
500
100
50
Ciss
Coss
0.5
0.3
0.05 0.1
0.5
ID (A)
1 5 7
0.2
0
–40 0
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
7
6
5
20
10
5
ID (pulse) max
50
TC (°C)
1ms
100µs
100 150
(TC=25°C)
10
5
3
0 10 20 30
VDS (V)
40
35
30
Crss
40 50
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
4
3
ID (A)
RDS (ON) LIMITED
1
0.5
2
1
5.10V
VGS=0V
0.1
72
0
0 0.5 1.0 1.5
VSD (V)
10ms (1shot)
PT (W)
25
20
15
With Infinite Heatsink
10
Without Heatsink
5
0.05
3 5 10 50 100
VDS (V)
500
0
0 50 100 150
Ta (°C)

SLA5047
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 150 V
VGSS ±20 V
ID ±10 A
ID(pulse) ±40 (PW≤1ms, Du≤1%) A
EAS* 280 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
40 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=4.7mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Specification
V(BR)DSS 150 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 10 15 S VDS=10V, ID=5A
RDS(ON)
70 85 mΩ VGS=10V, ID=5A
80 100 mΩ VGS=4V, ID=5A
Ciss 2000 pF VDS=10V, f=1.0MHz,
Coss 470 pF VGS=0V
td(on) 35 ns ID=5A,
tr 40 ns VDD 70V,
td(off) 150 ns RL=14Ω, VGS=5V,
tf 50 ns see Fig. 3 on page 16.
VSD 0.9 1.5 V ISD=10A, VGS=0V
trr 500 ns ISD=±100mA
3
6
9
12
1
4
7
10
2
5
8
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
10
10
150
VGS=10V
8
3V
2.8V
8
ID (A)
6
4
2
2.6V
2.4V
ID (A)
6
4
2
125°C
25°C
TC=–40°C
RDS (ON) (mΩ)
100
50
VGS=4V
10V
0
0 2 4 6 8
VDS (V)
10
0
0 1 2
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
50
(VDS=10V)
200
3
(ID=5A)
4
0
0 2 4 6
ID (A)
8000
5000
8
VGS=0V
f=1MHz
10
Re (yfs) (S)
10
5
125°C
TC=–40°C
25°C
RDS (ON) (mΩ)
150
100
VGS=4V
10V
Capacitance (pF)
1000
500
Ciss
Coss
1
50
0.5
100
Crss
0.3
0.05 0.1
0.5 1
ID (A)
5
10
0
–40 0
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
50
TC (°C)
100 150
50
0 10 20 30
VDS (V)
40 50
10
50 ID (pulse) max
(TC=25°C)
40
8
10
5
RDS (ON) LIMITED
1ms
10ms (1shot)
100µs
35
30
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
6
4
VGS=5V
0V
ID (A)
1
0.5
PT (W)
25
20
15
2
0.1
0.05
10
Without Heatsink
5
0
0 0.5 1.0 1.5
VSD (V)
0.01
0.5 1
5 10 50 100 200
VDS (V)
0
0 50 100 150
Ta (°C)
73

SLA5049
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 250 V
VGSS ±20 V
ID ±7 A
ID(pulse) ±15 (PW≤1ms, Du≤1%) A
EAS* 55 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 250 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=250V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A
RDS(ON) 400 500 mΩ VGS=10V, ID=3.5A
Ciss 450 pF VDS=10V, f=1.0MHz,
Coss 280 pF VGS=0V
td(on) 20 ns ID=3.5A,
tr 30 ns VDD 100V,
td(off) 55 ns RL=28.6Ω, VGS=10V,
tf 75 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V
trr 600 ns ISD=±100mA
3
5
7
9
11
2
4
6
8
10
1
12
Characteristic curves
ID (A)
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
7
6
5
4
3
2
1
6V
10V
5.5V
5V
4.5V
VGS=4V
0
0 2 4 6 8
VDS (V)
10
ID (A)
7
6
5
4
3
2
1
TC=–40°C
25°C
125°C
0
0 2 4 6
VGS (V)
(VDS=10V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
10
(VDS=10V)
1.0
8
ID=3.5A
VGS=10V
RDS (ON) (Ω)
0.5
0.4
0.3
0.2
0.1
0
0 1 2 3 4
ID (A)
2000
1000
5
(VGS=10V)
6 7
VGS=0V
f=1MHz
Re (yfs) (S)
5
1
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.8
0.6
0.4
Capacitance (pF)
500
100
50
Ciss
Coss
0.2
10
0.5
5
Crss
0.3
0.05 0.1
0.5 1
ID (A)
5 7
0
–40 0
50 100 150
TC (°C)
2
0 10 20 30
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
7
6
5
20
10
5
ID (pulse) max
1ms
100µs
(TC=25°C)
40
35
30
40 50
With Silicone Grease
Natural Cooling
All Circuits Operating
10ms (1shot)
With Infinite Heatsink
IDR (A)
4
3
2
1
5.10V
VGS=0V
ID (A)
1
0.5
0.1
RDS (on) LIMITED
PT (W)
25
20
15
10
Without Heatsink
5
74
0
0 0.5 1.0 1.5
VSD (V)
0.05
3 5 10 50
VDS (V)
100 500
0
0 50 100 150
Ta (°C)

SLA5052
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 150 V
VGSS ±20 V
ID ±10 A
ID(pulse) ±40 (PW≤1ms, Du≤1%) A
EAS* 160 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
40 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2.7mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 8 13.5 S VDS=10V, ID=5A
RDS(ON)
90 115 mΩ VGS=10V, ID=5A
105 130 mΩ VGS=4V, ID=5A
Ciss 1500 pF VDS=10V, f=1.0MHz,
Coss 360 pF VGS=0V
td(on) 30 ns ID=5A,
tr 35 ns VDD 70V,
td(off) 100 ns RL=14Ω, VGS=5V,
tf 40 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=10A, VGS=0V
trr 420 ns ISD=±100mA
3
6
9
12
1
4
7
10
2
5
8
11
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
10
10
150
VGS=10V
8
3.5V
3V
8
ID (A)
6
4
2.8V
2.6V
ID (A)
6
4
TC=–40°C
25°C
125°C
RDS (ON) (mΩ)
100
50
VGS=4V
10V
2
2
0
0 2 4 6
VDS (V)
8 10
0
0 1 2 3
VGS (V)
4 5
0
0 2 4 6
ID (A)
8 10
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
50
(VDS=10V)
300
(ID=5A)
5000
VGS=0V
f=1MHz
250
Ciss
Re (yfs) (S)
10
5
1
0.5
125°C
TC=–40°C
25°C
0.3
0.05 0.1
0.5 1
ID (A)
5
10
RDS (ON) (mΩ)
200
150
100
50
0
–40 0
TC (°C)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
VGS=4V
50
10V
100
150
Capacitance (pF)
1000
500
100
50
30
0 10 20 30
VDS (V)
Crss
Coss
40 50
10
50
ID (pulse) max
(TC=25°C)
40
8
10
5
1ms
10ms (1shot)
100µs
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
IDR (A)
6
4
2
5V
VGS=0V
ID (A)
1
0.5
0.1
0.05
RDS (ON) LIMITED
PT (W)
25
20
15
10
Without Heatsink
5
0
0 0.5 1.0 1.5
VSD (V)
0.01
0.5 1 5 10
50 100 200
VDS (V)
0
0 50 100 150
Ta (°C)
75

SLA5054
N-channel
General purpose
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
FET1 FET2 FET3
Unit
VDSS 150 V
VGSS +20, –10 V
ID ±7 ±5 ±7 A
ID(pulse) *1 ±15 ±10 ±15 A
EAS *2 15 mJ
IAS 5 A
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
*1 : PW≤100µs, duty≤50%
*2 : VDD=25V, L=1.0mH, IL=5A unclamped, RG=50Ω, see Fig. E on page 15.
Electrical characteristics
■Equivalent circuit diagram
FET1 FET2 FET3
Symbol Specification
Specification
Specification
Unit Conditions
Unit Conditions
min typ max min typ max min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V 100 nA VGS=20V 100 nA VGS=20V
IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 7 12 S VDS=10V, ID=3.5A 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
80 105 mΩ VGS=10V, ID=3.5A 330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A
85 115 mΩ VGS=4V, ID=3.5A 370 480 mΩ VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 1900 pF VDS=10V, 380 pF VDS=10V, 870 pF VDS=10V,
Coss 630 pF f=1.0MHz, 95 pF f=1.0MHz, 320 pF f=1.0MHz,
Crss 420 pF VGS=0V 25 pF VGS=0V 210 pF VGS=0V
td(on) 35 ns ID=3.5A, 25 ns ID=2.5A, 25 ns ID=3.5A,
tr 70 ns VDD 70V, 50 ns VDD 70V, 55 ns VDD 70V,
td(off) 140 ns RL=20Ω, 55 ns RL=28Ω, 80 ns RL=20Ω,
tf 90 ns VGS=5V, see Fig.3 on page 16. 40 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 620 ns IF=±100mA 180 ns IF=±100mA 500 ns IF=±100mA
Characteristic curves
ID-VDS Characteristics (Typical) FET1 FET2 FET3
2
3
1
5
6
7
8
FET-1 FET-1 FET-2 FET-2 FET-3 FET-3
9
Pin 4 : NC
10
11
12
13
14
15
(Ta=25°C)
7
6
10V
3.0V
2.6V
5
4
10V
4V
7
10V
6
4V
5
5
2.8V
ID (A)
4
3
2.4V
ID (A)
3
2
2.8V
2.6V
ID (A)
4
3
2.6V
2
2.2V
1
VGS=2.0V
0
0 2 4 6 8 10
VDS (V)
1
2.4V
VGS=2.2V
0
0 2 4 6 8 10
VDS (V)
2
2.4V
1
VGS=2.2V
0
0 2 4 6 8 10
VDS (V)
ID-VGS Characteristics (Typical) FET1 FET2 FET3
(VDS=10V)
7
5
7
(VDS=10V)
6
4
6
5
5
ID (A)
4
3
ID (A)
3
2
ID (A)
4
3
2
1
25°C
TC=125°C
0
0 1 2 3 4
VGS (V)
–40°C
1
Tc=125°C
0 1 2 3 4
VGS (V)
25°C
–40°C
2
1
Tc=125°C
0 1 2 3 4
VGS (V)
25°C
–40°C
RDS(ON)-ID Characteristics (Typical) FET1 FET2 FET3
100
500
200
4V
90
4V
400
4V
150
VGS=10V
RDS (ON) (mΩ)
80
70
VGS=10V
RDS (ON) (mΩ)
300
200
VGS=10V
RDS (ON) (mΩ)
100
60
100
50
76
50
0 1 2 3 4 5 6 7
ID (A)
0 0 1 2 3 4 5
ID (A)
0
0 1 2 3 4 5 6 7
ID (A)

SLA5054
Re(yfs)-ID Characteristics (Typical) FET1 FET2 FET3
(VDS=10V)
(VDS=10V)
20
100
10
(VDS=10V)
Re (yfs) (S)
10
1
TC=–40°C
25°C
125°C
Re (yfs) (S)
5
1
TC=–40°C
125°C
25°C
Re (yfs) (S)
10
5
1
TC=–40°C
125°C
25°C
0.5
0.5
0.3
0.3
0.1
0.05 0.1 0.5 1 5 7
0.05 0.1 0.5 1 5
0.05 0.1 0.5 1 5 7
ID (A)
ID (A)
ID (A)
RDS(ON)-TC Characteristics (Typical) FET1 FET2 FET3
(ID=3.5A)
(ID=2.5A)
200
1.0
500
(ID=3.5A)
400
RDS (ON) (mΩ)
100
4V
VGS=10V
RDS (ON) (Ω)
0.5
4V
VGS=10V
RDS (ON) (mΩ)
300
200
4V
VGS=10V
100
0
–40 0 50 100 150
TC (°C)
0
–40 0 50 100 150
TC (°C)
0
–40 0 50 100 150
TC (°C)
Capacitance-VDS Characteristics (Typical) FET1 VGS=0V
FET2 VGS=0V
FET3
f=1MHz
f=1MHz
10000
1000
5000
VGS=0V
f=1MHz
500
Ciss
Capacitance (pF)
1000
Ciss
Coss
Capacitance (pF)
100
50
Coss
Capacitance (pF)
1000
500
Ciss
Crss
100
50
0 10 20 30 40 50
VDS (V)
Crss
10
0 10 20 30 40 50
VDS (V)
100
50
40
Coss
Crss
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) FET1 FET2 FET3
7
5
7
6
4
6
5
10V
5
IDR (A)
4
3
2
4V
VGS=0V
IDR (A)
3
2
10V
4V
VGS=0V
IDR (A)
4
3
2
10V
4V
VGS=0V
1
1
1
0 0
VSD (V)
0
0 0.5 1.0 1.5
VSD (V)
VSD (V)
0 0.5 1.0 1.5 0 0.5 1.0 1.5
Safe Operating Area (SOA) FET1 FET2 FET3
(TC=25°C)
20
(TC=25°C)
ID (A)
10
ID (pulse) MAX
5
1
0.5
RDS (on) LIMITED
1ms
10ms (1shot)
100µs
ID (A)
20
ID (pulse) MAX
10
10
5
1
0.5
RDS (on) LIMITED
1ms
10ms (1shot)
100µs
ID (A)
20
5
ID (pulse) MAX
0.5
RDS (on) LIMITED
1ms
10ms (1shot)
(TC=25°C)
100µs
0.1
1-Circuit Operation
0.1
1-Circuit Operation
0.1
1-Circuit Operation
0.05
0.05
0.05
0.01
0.5 1 5 10 50 100 200
VDS (V)
0.01
0.5 1 5 10 50 100 200
VDS (V)
0.01
0.5 1 5 10 50 100 200
VDS (V)
PT-Ta Characteristics
40
PT (W)
35
30
25
20
15
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
10
5
Without Heatsink
0
0 50 100 150
Ta (°C)
77

SLA5055
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
Ratings
Symbol
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±5 ±7 A
ID (pulse) * ±10 ±15 A
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
(Ta=25°C)
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : PW≤100µs, duty≤50%
Unit
■Equivalent circuit diagram
3
5
7
9
11
FET-1 FET-2 FET-2 FET-2 FET-2
2 4 6 8 10
1
12
Characteristic curves
5
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
FET 1 FET 2 FET 1
7
(VDS=10V)
5
4
10V
4V
6
10V
4V
4
5
2.8V
ID (A)
3
2
2.8V
2.6V
ID (A)
4
3
2.6V
ID (A)
3
2
1
2.4V
VGS=2.2V
2
1
2.4V
VGS=2.2V
1
25°C
Tc=125°C
–40°C
0
0 2 4 6 8 10
VDS (V)
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
500
RDS(ON)-ID Characteristics (Typical)
FET 1 FET 2 FET 2
200
5
4V
(VDS=10V)
400
4V
150
VGS=10V
4
RDS (ON) (mΩ)
300
200
VGS=10V
RDS (ON) (mΩ)
100
ID (A)
3
2
100
50
1
25°C
Tc=125°C
–40°C
0
0 1 2 3 4 5
ID (A)
0
0 1 2 3 4 5 6 7
ID (A)
0 1 2 3 4
VGS (V)
1.0
RDS(ON)-TC Characteristics (Typical)
FET 1 FET 2
(ID=2.5A)
500
(ID=3.5A)
400
RDS (ON) (Ω)
0.5
4V
VGS=10V
RDS (ON) (mΩ)
300
200
4V
VGS=10V
100
0
–40 0 50 100 150
TC (°C)
0
-40 0 50 100 150
TC (°C)
78

SLA5055
Electrical characteristics
(Ta=25°C)
FET 1 FET 2
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V 100 nA VGS=20V
IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A
370 480 mΩ VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 380 pF VDS=10V, 870 pF VDS=10V,
Coss 95 pF f=1.0MHz, 320 pF f=1.0MHz,
Crss 25 pF VGS=0V 210 pF VGS=0V
td (on) 25 ns ID=2.5A, 25 ns ID=3.5A,
tr 50 ns VDD 70V, 55 ns VDD 70V,
td (off) 55 ns RL=28Ω, 80 ns RL=20Ω, VGS=5V,
tf 40 ns VGS=5V, see Fig.3 on page 16. 50 ns see Fig.3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 180 ns IF=±100mA 500 ns IF=±100mA
Characteristic curves
Re (yfs) (S)
10
5
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
FET 1 FET 2 FET 1
(VDS=10V)
(VDS=10V)
(TC=25°C)
20
20
TC=–40°C
125°C
25°C
Re (yfs) (S)
10
5
TC=–40°C
125°C
25°C
ID (A)
ID (pulse) MAX
10
5
1
0.5
RDS (on) LIMITED
100µs
1ms
10ms (1shot)
1
0.5
1
0.5
0.1
0.05
1-Circuit Operation
Capacitance (pF)
0.05 0.1 0.5 1 5
0.05 0.1 0.5 1 5 7
100
0.5 1 5 10 50 200
ID (A)
ID (A)
0 0
0
0 0.5 1.0 1.5 0 0.5 1.0 1.5 0 50 100 150
Capacitance-VDS Characteristics (Typical)
VGS=0V
FET 1 FET 2 VGS=0V
1000
f=1MHz
f=1MHz
5000
20
FET 2
(TC=25°C)
10
500
(pulse) MAX
5
ID
Ciss
1000
Ciss
100
500
0.5
Coss
50
0.1
1-Circuit Operation
Coss
0.05
100
Crss
Crss
50
10
40
0.01
0 10 20 30 40 50
0 10 20 30 40 50
0.5 5 10 50 100 200
1
VDS (V)
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
FET 1 FET 2
5
7
40
With Silicone Grease
6
35
Natural Cooling
All Circuits Operating
4
30
5
25
3
4
20
3
2
15
VGS=0V
VGS=0V
2
10
1
Without Heatsink
1
5
Ta (°C)
IDR (A)
10V
4V
VSD (V)
Capacitance (pF)
IDR (A)
10V
4V
VSD (V)
ID (A)
PT (W)
RDS (on) LIMITED
With Infinite Heatsink
1ms
10ms (1shot)
100µs
79

SLA5057
N-channel
General purpose
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
Ratings
Symbol
FET 1 FET 2
VDSS 200 V
VGSS ±20 V
ID ±7 A
ID(pulse) * ±15 A
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
(Ta=25°C)
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : PW≤100µs, duty≤50%
Unit
■Equivalent circuit diagram
3
6
8
10
12
14
FET-1 FET-1 FET-2 FET-2 FET-2 FET-2
2 5 7 9 11 13
1
Pin 4 : NC
15
Electrical characteristics
(Ta=25°C)
FET 1 FET 2
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 200 V ID=100µA, VGS=0V 200 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V ±100 nA VGS=±20V
IDSS 100 µA VDS=200V, VGS=0V 100 µA VDS=200V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 4.5 6.5 S VDS=10V, ID=3.5A 2.5 5.0 S VDS=10V, ID=3.5A
RDS(ON) 130 175 mΩ VGS=10V, ID=3.5A 270 350 mΩ VGS=10V, ID=3.5A
Ciss 850 pF VDS=10V, 450 pF VDS=10V,
Coss 550 pF f=1.0MHz, 280 pF f=1.0MHz,
Crss 250 pF VGS=0V 120 pF VGS=0V
td (on) 20 ns ID=3.5A, 20 ns ID=3.5A,
tr 25 ns VDD 100V, 30 ns VDD 100V,
td (off) 90 ns RL=28.6Ω, 55 ns RL=28.6Ω,
tf 70 ns VGS=10V, see Fig. 3 on page 16. 75 ns VGS=10V, see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 500 ns IF=±100mA 450 ns IF=±100mA
80

SLA5058
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
■Equivalent circuit diagram
(Ta=25°C)
Symbol Ratings Unit
VDSS 150 V
VGSS +20, –10 V
ID ±7A A
ID (pulse) ±15 (PW≤1ms, Du≤1%) A
EAS * 100 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
Electrical characteristics
Symbol
Specification
min typ max
Unit
Conditions
(Ta=25°C)
V(BR)DSS 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V
IDSS 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 4 9 S VDS=10V, ID=3.5A
RDS(ON)
150 200 mΩ VGS=10V, ID=3.5A
170 230 mΩ VGS=4V, ID=3.5A
Ciss 870 pF VDS=10V,
Coss 320 pF f=1.0MHz,
Crss 210 pF VGS=0V
td(on) 25 ns ID=3.5A,
tr 55 ns VDD 70V,
td(off) 80 ns RL=20Ω,
tf 50 ns VGS=5V, see Fig. 3 in page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V
trr 500 ns ISD=±100mA
3
5
7
9
11
2
4
6
8
10
1
12
Characteristic curves
ID (A)
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
7
7
200
10V
6
6
4V
5
5
150
2.8V
4
4
100
3
2.6V
3
2
2
50
2.4V
1
1
VGS=2.2V
0
0 1 2 3 4
ID (A)
25°C
Tc=125°C
–40°C
RDS (ON) (mΩ)
4V
VGS=10V
0
0 2 4 6 8 10 VGS (V)
VDS (V)
0
0 1 2 3 4 5 6 7
ID (A)
20
Re (yfs)-ID Characteristics (Typical) RDS (ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
500
(ID=3.5A)
5000
f=1MHz
Re (yfs) (S)
10
5
TC=–40°C
125°C
25°C
RDS (ON) (mΩ)
400
300
200
4V
VGS=10V
Capacitance (pF)
1000
500
Ciss
1
0.5
0.3
0.05 0.1 0.5 1 5 7
ID (A)
100
0
–40 0 50 100 150
TC (°C)
100
Coss
Crss
50
40
0 10 20 30 40 50
VDS (V)
IDR (A)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
40
7
6
5
4
3
10V
4V
VGS=0V
2
1
ID (A)
20
10
5
ID (pulse) MAX
RDS (on) LIMITED
0.5
0.1
TC=25°C
1-Circuit Operation
0.05
1ms
10ms (1shot)
100µs
PT (W)
35
30
25
20
15
10
Without Heatsink
5
With Infinite Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
0 0.01
0 0.5 1.0 1.5 0.5 1 5 10 50 100 200
VSD (V)
VDS (V)
0
0 50 100 150
Ta (°C)
81

SLA5059
N-channel + P-channel
3-phase motor drive
External dimensions B • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 20 V
ID 4 –4 A
ID(pulse) 8 (PW≤1ms, Duty≤25%) –8 (PW≤1ms, Duty≤25%) A
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
30 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
1
2
8
9
3
7
10
4
6
11
5
12
Characteristic curves
8
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
–8
8
10V
4.5V
–10V
Ta=40°C
(VDS=10V)
6
–6
–4.5V
6
25°C
4.0V
125°C
ID (A)
4
3.5V
ID (A)
–4
–4.0V
–3.6V
ID (A)
4
2
VGS=3.0V
–2
–3.2V
2
VGS=–2.7V
0
0 2 4 6 8 10
VDS (V)
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 2 4 6 8 10
VGS (V)
RDS (ON) (Ω)
0.6
0.5
0.4
0.3
0.2
0.1
VGS=4V
VGS=10V
RDS(ON)-ID Characteristics (Typical)
N-ch
(Ta=25°C)
P-ch
(Ta=25°C)
P-ch
0.6
–8
RDS (ON) (Ω)
VGS= –4V
0.5
0.4
VGS= –10V
0.3
0.2
0.1
ID (A)
Tc= –40°C
25°C
–6
125°C
–4
–2
(VDS=–10V)
0
0 2 4 6
8
ID (A)
0
0
–2
–4 –6 –8
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
0.8
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=2A
VGS=4V
0.8
P-ch
ID= –2A
VGS=–10V
0.7
0.7
RDS (ON) (Ω)
0.6
0.5
RDS (ON) (Ω)
0.6
0.5
0.4
0.4
0.3
0.3
82
0.2
–40
–25 0 25 50 75 100 125 150
Tc (°C)
0.2
–40
–25 0 25 50 75 100 125 150
Tc (°C)

SLA5059
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V –60 V ID=–100µA, VGS=0V
IGSS ±10 µA VGS=±20V 10 µA VGS= 20V
IDSS 100 µA VDS=60V, VGS=0V –100 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –1.0 –2.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.5 S VDS=10V, ID=2A 3 S VDS=–10V, ID=–2A
RDS(ON) 0.55 Ω VGS=4V, ID=2A 0.55 Ω VGS=–10V, ID=–2A
Ciss 150 pF
320 pF
VDS=10V, f=1.0MHz,
VDS=–10V, f=1.0MHz,
Coss 70 pF
130 pF
VGS=0V
VGS=0V
Crss 15 pF 40 pF
td(on) 12 ns
20 ns
ID=2A, VDD 20V,
ID=–2A, VDD –20V,
tr 40 ns 95 ns
RL=10Ω, VGS=5V,
RL=10Ω, VGS=–5V,
td(off) 40 ns
70 ns
see Fig. 3 on page 16.
see Fig. 4 on page 16.
tf 25 ns 60 ns
VSD 1.2 V ISD=4A, VGS=0V –1.1 V ISD=–4A, VGS=0V
trr 75 ns
ISD=2A, VGS=0V,
ISD=–2A, VGS=0V,
75 ns
di/dt=100A/µs
di/dt=100A/µs
Characteristic curves
10
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch (VDS=10V)
P-ch (VDS=–10V)
N-ch (Tc=25°C)
10
10
100µs
1ms
Re (yfs) (S)
1
125°C
25°C
Tc= –40°C
Re (yfs) (S)
1
Tc=–40°C
25°C
125°C
ID (A)
1
RDS (on) LIMITED
10ms
0.1
0.005 0.1 1
ID (A)
8
0.1
–0.005 –0.1
–1 –8
ID (A)
0.1
1 10 100
VDS (V)
1000
Capacitance-VDS Characteristics (Typical)
N-ch
VGS=0V
VGS=0V
P-ch
f=1MHz
f=1MHz
1000
–10
P-ch
(Tc=25°C)
100µs
Ciss
1ms
Capacitance (pF)
100
10
Ciss
Coss
Crss
Capacitance (pF)
100
10
Coss
Crss
ID (A)
–1
RDS (ON) LIMITED
10ms
1
0 10 20 30 40 50
VDS (V)
1
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–1
–10 –100
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
8
N-ch
–8
P-ch
40
6
–6
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
4
VGS=10V
IDR (A)
–4
VGS=–10V
PT (W)
25
20
15
With Infinite Heatsink
2
4V
–2
–4V
10
0V
0V
5
Without Heatsink
0
0.0 0.5 1.0 1.5 2.0
VSD (V)
0
0.0 –0.5 –1.0 –1.5 –2.0
VSD (V)
0
0 50 100 150
Ta (°C)
83

SLA5060
N-channel + P-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 6 –6 A
ID(pulse) 10 (PW≤1ms, duty≤25%) –10 (PW≤1ms, duty≤25%) A
,
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
1
2
8
9
3
7
10
4
6
11
5
12
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
10
N-ch (Ta=25°C)
P-ch (Ta=25°C)
N-ch
---10
10
8
10V
4V
(VDS=10V)
3.7V
3.5V
---8
–10V
–4V
–3.7V
–3.5V
8
ID (A)
6
4
3.3V
3.0V
ID (A)
---6
---4
–3.3V
–3.0V
ID (A)
6
4
Ta=125°C
25°C
2
2.7V
VGS=2.5V
---2
–2.7V
VGS=–2.5V
2
–40°C
0
0 2 4 6 8 10
VDS (V)
0
0 ---2 ---4 ---6 ---8 ---10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0.30
0.25
RDS(ON)-ID Characteristics (Typical)
N-ch (Ta=25°C)
P-ch (Ta=25°C)
0.30
---10
P-ch
---9
0.25
---8
(VDS=---10V)
RDS (ON) (Ω)
0.20
0.15
0.10
4V
VGS=10V
RDS (ON) (Ω)
0.20
0.15
0.10
VGS=–4V
–10V
ID (A)
---7
---6
---5
---4
---3
Ta=–40°C
0.05
0.05
---2
---1
–40°C
25°C
0
0 1 2 3 4 5 6 7 8 9 10
ID (A)
0.35
N-ch
RDS(ON)-TC Characteristics (Typical)
(ID=3A)
0
0 ---2
0.35
---4 ---6 ---8 ---10
ID (A)
P-ch
(ID=---3A)
0
0 ---1 ---2 ---3 ---4 ---5
VGS (V)
0.30
0.30
RDS (ON) (Ω)
0.25
0.20
0.15
4V
VGS=10V
RDS (ON) (Ω)
0.25
0.20
0.15
VGS=–4V
–10V
0.10
0.10
0.05
0.05
84
0
---40 0 50 100 150
TC (°C)
0
---40 0 50 100 150
TC (°C)

SLA5060
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V –60 V ID=–100µA, VGS=0V
IGSS ±10 µA VGS=±20V ±10 µA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V –100 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –1.0 –2.0 V VDS=–10V, ID=–250µA
Re(yfs) 5.5 S VDS=10V, ID=3A 6 S VDS=–10V, ID=–3A
RDS(ON) 0.22 Ω VGS=4V, ID=3A 0.22 Ω VGS=–10V, ID=–3A
Ciss 320 pF
790 pF
VDS=10V, f=1.0MHz,
VDS=–10V, f=1.0MHz,
Coss 160 pF
310 pF
VGS=0V
VGS=0V
Crss 35 pF 90 pF
td(on) 16 ns
40 ns
ID=3A, VDD=20V,
ID=–3A, VDD=20V,
tr 65 ns 110 ns
RL=6.67Ω, VGS=5V,
RL=6.67Ω, VGS=–5V,
td(off) 70 ns
160 ns
see Fig. 3 on page 16.
see Fig. 4 on page 16.
tf 45 ns 80 ns
VSD 1.2 V ISD=6A, VGS=0V –1.1 V ISD=–6A, VGS=0V
trr 65 ns
ISD=3A, VGS=0V,
ISD=–3A, VGS=0V,
85 ns
di/dt=100A/µs
di/dt=100A/µs
Characteristic curves
10
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
TC=25°C
N-ch (VDS=10V)
P-ch (VDS=---10V)
N-ch
10
SINGLE PULSE
20
Ta=–40°C
10
100µs
Ta=–40°C
Re (yfs) (S)
1
125°C
25°C
Re (yfs) (S)
1
125°C
25°C
ID (A)
1
RDS (ON) LIMITED
10 ms
1ms
0.1
0.05 0.1
1
ID (A)
N-ch
2000
10
0.1
–0.05
–0.1 –1 –10
ID (A)
0.1
0.1 1 10 100
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
VGS=0V
N-ch(Ta=25°C)
f=1MHz
P-ch
P-ch (Ta=25°C) f=1MHz
P-ch
–20
2000
TC=25°C
SINGLE PULSE
1000
Ciss
–10
1ms
100µs
10 ms
Capacitance (pF)
1000
100
Ciss
Coss
Capacitance (pF)
100
Coss
Crss
ID (A)
–1
RDS (ON) LIMITED
Crss
10
0 10 20 30 40 50
VDS (V)
10
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.1 –1 –10 –100
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
10
N-ch
(Ta=25°C)
---10
P-ch
(Ta=25°C)
40
8
---8
35
30
With Silicon Grease
Natural Cooling
All Circuits Operating
IDR (A)
6
4
VGS=–10V
4V
0V
IDR (A)
---6
---4
VGS=–10V
–4V
PT (W)
25
20
15
With Infinite Heatsink
2
---2
0V
10
5
Without Heatsink
0
0 0.5
1.0 1.5
VSD (V)
0
0 ---0.5
---1.0
---1.5
VSD (V)
0
0 50 100 150
Ta (°C)
85

SLA5061
N-channel+P-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
N channel
Ratings
P channel
Unit
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 10 –6 A
ID(pulse) 15 (PW≤1ms, duty≤25%) –15 (PW≤1ms, duty≤25%) A
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
40 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.125 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
1
2
8
9
3
7
10
4
6
11
5
12
Characteristic curves
15
14
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch (Ta=25°C)
P-ch (Ta=25°C)
N-ch
–15
15
4.0V
–14
–4.0V
14
(VDS=10V)
12
–12
–10V
12
ID (A)
10
8
6
3.5V
3.3V
ID (A)
–10
–8
–6
–3.5V
–3.3V
ID (A)
10
8
6
TC=125°C
4
3.0V
–4
–3.0V
4
25°C
2 VGS=2.7V
–2
VGS=–2.7V
2
–40°C
0
0 2 4 6 8 10
VDS (V)
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0.20
0.18
0.16
RDS(ON)-ID Characteristics (Typical)
N-ch
Ta=25°C
Ta=25°C
VGS=4V
P-ch VGS=–10V
–15
P-ch
0.20
–14
0.18
0.16
–12
(VDS=–10V)
0.14
0.14
–10
RDS (ON) (Ω)
0.12
0.10
0.08
RDS (ON) (Ω)
0.12
0.10
0.08
ID (A)
–8
–6
TC=125°C
0.06
0.06
–4
0.04
0.02
0.04
0.02
–2
25°C
–40°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
ID (A)
0
0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10–11 –12–13–14–15
ID (A)
0
0 –1 –2 –3 –4
VGS (V)
–5
86
RDS (ON) (Ω)
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
N-ch
0.00
---40 0 50 100 150
TC (°C)
RDS(ON)-TC Characteristics (Typical)
ID=5A
VGS=4V
RDS (ON) (Ω)
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
P-ch
ID=–5A
VGS=–10V
0.00
---40 0 50 100 150
TC (°C)

SLA5061
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V –60 V ID=–100µA, VGS=0V
IGSS ±10 µA VGS=±20V 10 µA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V –100 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –1.0 –2.0 V VDS=–10V, ID=–250µA
Re(yfs) 8 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A
RDS(ON) 0.14 Ω VGS=4V, ID=5A 0.14 Ω VGS=–10V, ID=–5A
Ciss 460 pF
1200 pF
VDS=10V, f=1.0MHz,
VDS=–10V, f=1.0MHz,
Coss 225 pF
440 pF
VGS=0V
VGS=0V
Crss 50 pF 120 pF
td(on) 25 ns
50 ns
ID=5A, VDD 20V,
ID=–5A, VDD 20V,
tr 110 ns 170 ns
RL=4Ω, VGS=5V,
RL=4Ω, VGS=–5V
td(off) 90 ns
180 ns
see Fig. 3 on page 16.
see Fig. 4 on page 16.
tf 55 ns 100 ns
VSD 1.15 V ISD=10A, VGS=0V –1.25 V ISD=–10A, VGS=0V
trr 75 ns
ISD=5A, VGS=0V
ISD=–5A, VGS=0V
100 ns
di/dt=100A/µs
di/dt=100A/µs
Characteristic curves
20
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
TC=25°C
N-ch (VDS=10V)
P-ch (VDS=–10V)
N-ch
20
SINGLE PULSE
20
100µs
10
10
10
Re (yfs) (S)
1
125°C
25°C
TC=–40°C
Re (yfs) (S)
1
125°C
25°C
TC=–40°C
ID (A)
1
RDS (ON) LIMITED
10 ms
1ms
0.1
0.1
0.05 0.1
1
10 20
0.1
–0.05 –0.1
–1
–10 –20
0.1 1 10 100
ID (A)
ID (A)
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
N-ch P-ch VGS=0V
N-ch
(Ta=25°C) f=1MHz
P-ch
P-ch
(Ta=25°C) f=1MHz
5000
5000
–20
–10
TC=25°C
SINGLE PULSE
100ms
1ms
10 ms
Capacitance (pF)
1000
100
Ciss
Coss
Capacitance (pF)
1000
100
Ciss
Coss
Crss
ID (A)
–1
RDS (ON) LIMITED
Crss
10
0 10 20 30 40 50
VDS (V)
10
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.1 –1 –10 –100
VDS (V)
IDR (A)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
N-ch
VGS=10V
1
0
0 0.5
1.0 1.5
VSD (V)
4V
0V
IDR-VSD Characteristics (Typical)
(Ta=25°C)
IDR (A)
–15
–14
–13
–12
–11
–10
–9
–8
–7
–6
–5
–4
–3
–2
P-ch
VGS=–10V
–4V
(Ta=25°C)
–1
0
0 –0.5
–1.0 –1.5
VSD (V)
0V
PT (W)
40
35
30
25
20
PT-Ta Characteristics
With Infinite Heatsink
With Silicon Grease
Natural Cooling
All Circuits Operating
15
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
87

SLA5064
N-channel+P-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 10 –10 A
ID(pulse) 15 (PW≤1ms, duty≤25%) –15 (PW≤1ms, duty≤25%) A
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT
40 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.125 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
5
12
4
6
11
3
7
10
2
8
9
1
Characteristic curves
15
14
12
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch
(Ta=25°C)
P-ch (Ta=25°C)
N-ch
–15
15
4.0V
–14
14
–10V
–4.0V
–12
12
(VDS=10V)
ID (A)
10
8
6
3.5V
3.3V
ID (A)
–10
–8
–6
–3.5V
–3.3V
ID (A)
10
8
6
TC=125°C
4
3.0V
–4
–3.0V
4
25°C
2 VGS=2.7V
–2
VGS=–2.7V
2
–40°C
0
0 2 4 6 8 10
VDS (V)
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 1 2 3 4
VGS (V)
5
0.20
0.18
0.16
RDS(ON)-ID Characteristics (Typical)
N-ch
Ta=25°C
Ta=25°C
VGS=4V
P-ch VGS=–10V
–15
0.20
P-ch
–14
0.18
0.16
–12
(VDS=10V)
RDS (ON) (Ω)
0.14
0.12
0.10
0.08
RDS (ON) (Ω)
0.14
0.12
0.10
0.08
ID (A)
–10
–8
–6
TC=125°C
0.06
0.06
–4
0.04
0.02
0.04
0.02
–2
25°C
–40°C
0.00
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
ID (A)
0.00
0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10–11 –12–13–14–15
ID (A)
0
0 –1 –2 –3 –4
VGS (V)
–5
0.20
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=5A
VGS=4V
0.20
P-ch
ID=–5A
VGS=–10V
0.18
0.18
0.16
0.16
0.14
0.14
RDS (ON) (Ω)
0.12
0.10
0.08
0.06
RDS (ON) (Ω)
0.12
0.10
0.08
0.06
0.04
0.04
0.02
0.02
0.00
---40 0 50 100 150
TC (°C)
0.00
---40 0 50 100 150
TC (°C)
88

SLA5064
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V –60 V ID=–100µA, VGS=0V
IGSS ±10 µA VGS=±20V 10 µA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V –100 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –1.0 –2.0 V VDS=–10V, ID=–250µA
Re(yfs) 8 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A
RDS(ON) 0.14 Ω VGS=4V, ID=5A 0.14 Ω VGS=–10V, ID=–5A
Ciss 460 pF
1200 pF
VDS=10V, f=1.0MHz,
VDS=–10V, f=1.0MHz,
Coss 225 pF
440 pF
VGS=0V
VGS=0V
Crss 50 pF 120 pF
td(on) 25 ns
50 ns
ID=5A, VDD 20V,
ID=–5A, VDD 20V,
tr 110 ns 170 ns
RL=4Ω, VGS=5V,
RL=4Ω, VGS=–5V,
td(off) 90 ns
180 ns
see Fig. 3 on page 16.
see Fig. 4 on page 16.
tf 55 ns 100 ns
VSD 1.15 V ISD=10A, VGS=0V –1.25 V ISD=–10A, VGS=0V
trr 75 ns
ISD=5A, VGS=0V,
ISD=–5A, VGS=0V,
100 ns
di/dt=100A/µs
di/dt=100A/µs
Characteristic curves
20
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
TC=25°C
N-ch (VDS=10V)
P-ch (VDS=–10V)
20
20
N-ch SINGLE PULSE
100µs
10
10
10
Re (yfs) (S)
1
25°C
TC=–40°C
Re (yfs) (S)
1
125°C
25°C
TC=–40°C
ID(A)
1
RDS (ON) LIMITED
10 ms
1ms
125°C
0.1
0.05 0.1
1
ID (A)
10 20
0.1
–0.05 –0.1
–1
ID (A)
–10 –20
0.1
0.1 1 10 100
VDS (V)
N-ch
5000
Capacitance-VDS Characteristics (Typical)
N-ch (Ta=25°C)
VGS=0V
VGS=0V
f=1MHz
P-ch
P-ch (Ta=25°C) f=1MHz
5000
–20
P-ch
–10
TC=25°C
SINGLE PULSE
100µs
1ms
Capacitance (pF)
1000
100
Ciss
Coss
Capacitance (pF)
1000
100
Ciss
Coss
Crss
ID (A)
–1
RDS (ON) LIMITED
10 ms
Crss
10
0 10 20 30 40 50
VDS (V)
10
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.1 –1 –10 –100
VDS (V)
IDR (A)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
N-ch
VGS=10V
1
0
0 0.5
1.0 1.5
VSD (V)
4V
0V
IDR-VSD Characteristics (Typical)
(Ta=25°C)
IDR (A)
–15
–14
–13
–12
–11
–10
–9
–8
–7
–6
–5
–4
–3
–2
P-ch
VGS=–10V
–4V
(Ta=25°C)
–1
0
0 –0.5
–1.0 –1.5
VSD (V)
0V
PT (W)
40
35
30
30
25
25
20
15
10
5
0
PT-Ta Characteristics
Without Heatsink
All Circuits Operating
With Infinite Heatsink
0 50 100 150
Ta (°C)
89

SLA5065
N-channel
5-phase motor drive
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID 7 A
ID(pulse) 15 (PW≤100µs, Du≤1%) A
EAS* 60 mJ
IAS 7 A
PT
4.8 (Ta=25°C, with all circuits operating, without heatsink)
35 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a 26 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=20mH, ID=2A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 6 S VDS=10V, ID=3.5A
RDS(ON) 0.1 Ω VGS=10V, ID=3.5A
Ciss 660 pF VDS=10V,
Coss 310 pF f=1.0MHz,
Crss 75 pF VGS=0V
td(on) 30 ns ID=3.5A,
tr 90 ns VDD 20V,
td(off) 140 ns RL=5.7Ω, VGS=5V,
tf 65 ns see Fig. 3 on page 16.
VSD 1.1 V ISD=7A, VGS=0V
trr 80 ns ISD=3.5A, di/dt=100A/µA
5
10
4
3
9
7
2
6
1
8
Pins 11, 12, 13, 14, 15 : NC
Characteristic curves
ID (A)
15
10
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
3
10V
4.0V
3.8V
(Ta=25°C)
3.5V
3.3V
3.0V
2.7V
VGS=2.5V
0
0 2 4 6 8 10
VDS (V)
ID (A)
15
14
12
10
8
6
4
2
TC=125°C
25°C
–40°C
0
0 1 2
3
VGS (V)
(VDS=10V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
(ID=3.5A)
(Ta=25°C) f=1MHz
20
0.20
4 5
RDS (ON) (Ω)
0.15
0.10
0.05
0
0
5000
VGS=4V
10V
5 10
ID (A)
(Ta=25°C)
15
10
TC= –40°C
0.18
Re (yfs) (S)
1
125°C
25°C
RDS (ON) (Ω)
0.16
0.14
0.12
0.10
0.08
0.06
VGS=4V
10V
Capacitance (pF)
1000
100
Ciss
Coss
0.04
Crss
0.02
0.1
0.05
0.1 1
ID (A)
10
20
0
–40 0 50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
TC=25°C
(Ta=25°C)
SINGLE PULSE
All Circuits Operating
15
20
100µs
40
IDR (A)
10
VGS=10V
4V
0V
ID (A)
10
1
RDS (ON) LIMITED
10 ms
1ms
PT (W)
30
20
With Infinite Heatsink
5
10
Without Heatsink
90
0 0 0.5 1.0 1.5
VSD (V)
0.1
0.1 1 10 100
VDS (V)
0
0 50 100 150
Ta (°C)

SLA5068
N-channel
5-phase motor drive
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID 7 A
ID(pulse) 15 (PW≤100µs, Du≤1%) A
EAS* 60 mJ
IAS 7 A
PT
5 (Ta=25°C, with all circuits operating, without heatsink)
50 (Tc=25°C,with all circuits operating, with infinite heatsink)
W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 2.5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=20mH, ID=2A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 6 S VDS=10V, ID=3.5A
RDS(ON) 0.1 Ω VGS=10V, ID=3.5A
Ciss 660 pF VDS=10V,
Coss 310 pF f=1.0MHz,
Crss 75 pF VGS=0V
td(on) 30 ns ID=3.5A,
tr 90 ns VDD 20V,
td(off) 140 ns RL=5.7Ω, VGS=5V,
tf 65 ns see Fig. 3 on page 16.
VSD 1.1 V ISD=7A, VGS=0V
trr 80 ns ISD=3.5A, di/dt=100A/µA
5
10
12
4
3
11
7
13
15
2
6
14
1
Pins 8, 9 : NC
Characteristic curves
15
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
10V
4.0V
3.8V
(Ta=25°C)
3.5V
15
14
12
(VDS=10V)
0.15
(Ta=25°C)
ID (A)
10
3
3.3V
3.0V
ID (A)
10
8
6
4
TC=125°C
25°C
RDS (ON) (Ω)
0.10
0.05
VGS=4V
10V
2.7V
VGS=2.5V
0
0 2 4 6 8 10
VDS (V)
2
–40°C
0
0 1 2
3
VGS (V)
4 5
0
0
5 10
ID (A)
15
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
(ID=3.5A)
(Ta=25°C) f=1MHz
20
0.20
5000
Re (yfs) (S)
10
1
TC= –40°C
125°C
25°C
RDS (ON) (Ω)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
VGS=4V
10V
Capacitance (pF)
1000
100
Ciss
Coss
0.04
Crss
0.02
0.1
0.05
0.1 1
ID (A)
10
20
0
–40 0 50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
TC=25°C
(Ta=25°C)
SINGLE PULSE
All Circuits Operating
15
20
100µs
60
IDR (A)
10
VGS=10V
4V
0V
ID (A)
10
1
RDS (ON) LIMITED
10 ms
1ms
PT (W)
50
40
30
With Infinite Heatsink
5
20
10
Without Heatsink
0 0 0.5 1.0 1.5
VSD (V)
0.1
0.1 1 10 100
VDS (V)
0
0 50 100 150
Ta (°C)
91

SLA5070
N-channel
General purpose
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
Ratings
Symbol
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±7 A
ID(pulse) ±15 (PW≤100µs, duty≤1%) A
(Ta=25°C)
EAS * 100 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
60 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 2.08 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Unit
3
6
8
10
12
14
FET-1 FET-1 FET-2 FET-2 FET-2 FET-2
2 5 7 9 11 13
1
Pin 4 : NC
15
Characteristic curves
7
6
10V
3.0V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
FET 1 FET 2 FET 1
7
(VDS=10V)
7
2.6V
10V
6 4V
6
5
5
2.8V
5
ID (A)
4
3
2.4V
ID (A)
4
3
2.6V
ID (A)
4
3
Tc=125°C
25°C
–40°C
2
2.2V
1
VGS=2.0V
0
0 2 4 6 8 10
VDS (V)
2
2.4V
1
VGS=2.2V
0
0 2 4 6 8 10
VDS (V)
2
1
0
0 1 2 3 4
VGS (V)
100
RDS(ON)-ID Characteristics (Typical)
FET 1 FET 2 FET 2
200
7
4V
(VDS=10V)
RDS (ON) (mΩ)
90
80
70
4V
VGS=10V
RDS (ON) (mΩ)
150
100
VGS=10V
ID (A)
6
5
4
3
60
50
2
1
25°C
Tc=125°C
–40°C
50
0 1 2 3 4 5 6 7
ID (A)
0
0 1 2 3 4 5 6 7
ID (A)
0
0 1 2 3 4
VGS (V)
200
RDS(ON)-TC Characteristics (Typical)
FET 1 (ID=3.5A)
FET 2
500
(ID=3.5A)
400
RDS (ON) (mΩ)
100
4V
VGS=10V
RDS (ON) (mΩ)
300
200
4V
VGS=10V
100
0
–40 0 50 100 150
TC (°C)
0
–40 0 50 100 150
TC (°C)
92

SLA5070
Electrical characteristics
(Ta=25°C)
FET 1 FET 2
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V
IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 7 12 S VDS=10V, ID=3.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
80 105 mΩ VGS=10V, ID=3.5A 150 200 mΩ VGS=10V, ID=3.5A
85 115 mΩ VGS=4V, ID=3.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 1900 pF VDS=10V, 870 pF VDS=10V,
Coss 630 pF f=1.0MHz, 320 pF f=1.0MHz,
Crss 420 pF VGS=0V 210 pF VGS=0V
td (on) 35 ns ID=3.5A 25 ns ID=3.5A,
tr 70 ns VDD 70V, 55 ns VDD 70V,
td(off) 140 ns RL=20Ω 80 ns RL=20Ω,
tf 90 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 620 ns IF=±100mA 500 ns IF=±100mA
Characteristic curves
100
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
FET 1 (VDS=10V)
FET 2 FET 1
(VDS=10V)
20
20
(TC=25°C)
100µs
Re (yfs) (S)
10
TC=–40°C
25°C
125°C
Re (yfs) (S)
10
5
TC=–40°C
125°C
25°C
ID (A)
10
5
1
0.5
ID (pulse) MAX
RDS (on) LIMITED
1ms
10ms (1shot)
1
1
0.1
1-Circuit Operation
0.05
0.5
Capacitance (pF)
0.1
0.05 0.1 1 5
0.5 7
10000
1000
IDR (A)
100
0.01
0.5 1 5 10 50 100 200
0.3
ID (A)
0.05 0.1 0.5 1 5 7
ID (A)
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
VGS=0V
FET 1 f=1MHz
FET 2 FET 2
f=1MHz
(TC=25°C)
5000
20
10
5
ID (pulse) MAX
Ciss
1000
Ciss
500
0.5
Coss
0.1
1-Circuit Operation
Crss
Coss
0.05
100
Crss
50
50
0 10 20 30 40 50
40
0.01
0 10 20 30 40 50
0.5 1 5 10 50 100 200
VDS (V)
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
FET 1 FET 2
60
7
7
With Silicon Grease
Natural Cooling
6
6
All Circuits Operating
5
5
40
10V
4
4V
4
VGS=0V
3
3
20
VGS=0V
2
2
1
1
Without Heatsink
5
0
0 0 0 50 100 150
0 0.5 1.0 1.5 0 0.5 1.0 1.5 Ta (°C)
VSD (V)
Capacitance (pF)
IDR (A)
10V
4V
VSD (V)
ID (A)
PT (W)
RDS (on) LIMITED
10ms (1shot)
With Infinite Heatsink
1ms
100µs
93

SLA5072
N-channel
3-phase DC motor 100V AC direct drive
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 250 V
VGSS ±20 V
ID 7 A
ID(pulse) 15 (PW≤1ms, Du≤1%) A
EAS* 55 mJ
IAS 7 A
PT
5 (Ta=25°C, with all circuits operating, without heatsink)
40 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.125 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 250 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=250V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A
RDS(ON) 400 500 mΩ VGS=10V, ID=3.5A
Ciss 450 pF VDS=10V, f=1.0MHz,
Coss 280 pF VGS=0V
td(on) 20 ns ID=3.5A,
tr 30 ns VDD=100V,
td(off) 55 ns RL=28.6Ω, VGS=10V,
tf 75 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V
trr 75 ns ISD=3.5A, VGS=0V, di/dt=100A/µs
5
10
12
4
3
11
7
13
15
2
6
14
1
Pins 8,9 : NC
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
6V
(VDS=10V)
(VGS=10V)
7
5.5V
7
0.5
6
10V
6
0.4
5
5
ID (A)
4
3
5V
ID (A)
4
3
TC=–40°C
25°C
RDS (ON) (Ω)
0.3
0.2
2
1
4.5V
2
1
125°C
0.1
VGS=4V
0
0 2 4 6 8 10
VDS (V)
0
0 2 4 6
VGS (V)
8
0
0 1 2 3 4
ID (A)
5
6 7
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=3.5A
VGS=0V
(VDS=10V)
VGS=10V
10
f=1MHz
1.0
2000
1000
Re (yfs) (S)
5
1
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.8
0.6
0.4
Capacitance (pF)
500
100
50
Ciss
Coss
0.5
0.2
10
5
Crss
0.3
0.05 0.1
0.5 1
ID (A)
5
7
0
–40 0
50 100 150
TC (°C)
2
0 10 20 30
VDS (V)
40 50
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(VGS=0V)
(TC=25°C)
7
10
6
5
5
20
RDS (ON) LIMITED
ID (pulse) max
1ms
100ms
40
With Silicon Grease
35
Natural Cooling
All Circuits Operating
30
10ms (1shot)
With Infinite Heatsink
IDR (A)
4
3
ID (A)
1
0.5
PT (W)
25
20
15
2
1
0
0 0.5 1.0 1.5
VSD (V)
0.1
0.05
0.03
3 5 10 50 100 300
VDS (V)
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
94

SLA5073
N-channel
5-phase motor drive
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID 5 A
ID(pulse) 8 (PW≤1ms, Du≤25%) A
PT
5 (Ta=25°C, with all circuits operating, without heatsink)
30 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 5.5 S VDS=10V, ID=3A
RDS(ON) 0.3 Ω VGS=4V, ID=3A
Ciss 320 pF VDS=10V,
Coss 160 pF f=1.0MHz,
Crss 35 pF VGS=0V
td(on) 16 ns ID=3A,
tr 65 ns VDD 20V,
td(off) 70 ns RL=6.67Ω, VGS=5V,
tf 45 ns see Fig. 3 on page 16.
VSD 1.2 V ISD=4A, VGS=0V
trr 65 ns ISD=3A, VGS=0V, di/dt=100A/µs
5
10
15
4
3
11
7
14
12
2
6
11
1 8
13
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
Ta=25°C
(Ta=25°C)
(VDS=10V)
VGS=4V
8
4V
8
0.30
7
10V
3.8V
7
0.25
6
6
ID (A)
5
4
3
2
3.5V
3.3V
3.0V
ID (A)
5
4
3
2
TC=125°C
RDS (ON) (Ω)
0.20
0.15
0.10
1
VGS=2.7V
1
25°C
–40°C
0.05
0
0 2 4 6 8
VDS (V)
10
0
0 1 2 3 4
VGS (V)
5
0
0 1 2 3 4
ID (A)
5
6 7 8
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=3A
VGS=0V
20
(VDS=10V)
VGS=4V
0.35
1000
(Ta=25°C) f=1MHz
Re (yfs) (S)
10
1
Ta=–40°C
125°C
25°C
RDS (ON) (Ω)
0.30
0.25
0.20
0.15
0.10
Capacitance (pF)
100
Ciss
Coss
0.05
Crss
0.1
0.05 0.1
1
ID (A)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
8
7
6
10
(Ta=25°C)
0.00
–40 0
10
50 100 150
TC (°C)
(TC=25°C, SINGLE PULSE)
10 ms
1ms
100µs
10
0 10 20 30 40 50
VDS (V)
40
35
30
With Silicon Grease
Natural Cooling
All Circuits Operating
IDR (A)
5
4
3
VGS=10V
4V
0V
ID (A)
1
RDS (ON) LIMITED
PT (W)
25
20
15
With Infinite Heatsink
2
10
1
Without Heatsink
5
0
0 0.5 1.0 1.5
VSD (V)
0.1
0.1 1 10 100
VDS (V)
0
0 50 100 150
Ta (°C)
95

SLA5074
N-channel
5-phase motor drive
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID 5 A
ID(pulse) 8 (PW≤1ms, Du≤25%) A
PT
4.8 (Ta=25°C, with all circuits operating, without heatsink)
25 (Tc=25°C,with all circuits operating, with infinite heatsink)
W
θ j-a 26 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V
(Ta=25°C)
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 5.5 S VDS=10V, ID=3A
RDS(ON) 0.3 Ω VGS=4V, ID=3A
Ciss 320 pF VDS=10V,
Coss 160 pF f=1.0MHz,
Crss 35 pF VGS=0V
td(on) 16 ns ID=3A,
tr 65 ns VDD 20V,
td(off) 70 ns RL=6.67Ω, VGS=5V,
tf 45 ns see Fig. 3 on page 16.
VSD 1.2 V ISD=4A, VGS=0V
trr 65 ns ISD=3A, VGS=0V, di/dt=100A/µs
5
10
4
3
9
7
2
6
1
8
Pins 11, 12, 13, 14, 15 : NC
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
Ta=25°C
(Ta=25°C)
(VDS=10V)
VGS=4V
8
4V
8
0.30
7
10V
3.8V
7
0.25
6
6
ID (A)
5
4
3
2
3.5V
3.3V
3.0V
ID (A)
5
4
3
2
TC=125°C
RDS (ON) (Ω)
0.20
0.15
0.10
1
VGS=2.7V
1
25°C
–40°C
0.05
0
0 2 4 6 8
10
0
0 1 2 3 4
VGS (V)
VDS (V)
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
20
(VDS=10V)
0.35
5
ID=3A
VGS=4V
1000
0
0 1 2 3 4
5
(Ta=25°C)
6 7 8
VGS=0V
f=1MHz
Re (yfs) (S)
10
1
Ta=–40°C
125°C
25°C
RDS (ON) (Ω)
0.30
0.25
0.20
0.15
0.10
Capacitance (pF)
100
Ciss
Coss
0.05
Crss
0.1
0.05 0.1
1
ID (A)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
8
10
(Ta=25°C)
0.00
–40 0
10
50 100 150
TC (°C)
(TC=25°C, SINGLE PULSE)
100µs
10
0 10 20 30 40 50
VDS (V)
30
All Circuits Operating
7
6
10 ms
1ms
25
IDR (A)
5
4
3
2
VGS=10V
4V
0V
ID (A)
1
RDS (ON) LIMITED
PT (W)
20
15
10
With Infinite Heatsink
1
Without Heatsink
5
0
0 0.5 1.0 1.5
VSD (V)
0.1
0.1 1 10 100
VDS (V)
0
0 50 100
Ta (°C)
150
96

SLA5075
N-channel
3-phase DC motor 200V AC direct drive
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 500 V
VGSS ±30 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms, Du≤1%) A
EAS* 45 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink)
60 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 2.08 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=30V, L=3.4mH, ID=5A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 500 V ID=100µA, VGS=0V
(Ta=25°C)
IGSS ±100 nA VGS=±30V
IDSS 100 µA VDS=500V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 2.4 4.0 S VDS=10V, ID=2.5A
RDS(ON) 1.05 1.4 Ω VGS=10V, ID=2.5A
Ciss 770 pF VDS=10V, f=1.0MHz,
Coss 290 pF VGS=0V
td(on) 20 ns ID=2.5A,
tr 25 ns VDD 200V,
td(off) 70 ns RL=80Ω, VGS=10V,
tf 65 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V
trr 75 ns ISD=2.5A, di/dt=100A/µs
5
10
12
4
3
11
7
13
15
2
6
14
1
Pins 8, 9 : NC
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=20V)
(VGS=10V)
5
5
2.0
5V
4
10V
4
1.5
ID (A)
3
2
4.5V
ID (A)
3
2
TC=125°C
RDS (ON) (Ω)
1.0
1
4V
1
25°C
–40°C
0.5
VGS=3.5V
0
0 5 10 15 20
VDS (V)
0
0 2 4
VGS (V)
6
0
0 1 2 3 4
ID (A)
5
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=2.5A
VGS=0V
10
(VDS=20V)
VGS=10V
3.0
2000
f=1MHz
Re (yfs) (S)
5
1
0.5
Ta=–40°C
25°C
125°C
RDS (ON) (Ω)
2.5
2.0
1.5
1.0
0.5
Capacitance (pF)
1000
500
100
50
Ciss
Coss
Crss
IDR (A)
0.2
0.05 0.1 0.5 1
ID (A)
5
4
3
2
5
0
–40 0
50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(Ta=25°C)
ID (A)
20
10
5
1
0.5
RDS (ON) LIMITED
ID(pulse) max
1ms
(TC=25°C)
100µs
PT (W)
60
40
20
With Silicon Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
1
0
0 0.5 1.0 1.5
VSD (V)
0.1
0.05
3 5 10 50 100
600
VDS (V)
Without Heatsink
5
0
0 50 100 150
Ta (°C)
97

SLA5077
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)
Symbol Ratings Unit Symbol
Specification
min typ max
Unit Conditions
VDSS 150 V V(BR)DSS 150 V ID=100µA, VGS=0V
VGSS +20, –10 V
ID ±10 A
ID(pulse) ±40 (PW≤100µs, duty≤1%) A
EAS* 100 mJ
IAS 10 A
PT
5 (Ta=25°C, with all circuits operating, without heatsink)
50 (Tc=25°C,with all circuits operating, with infinite heatsink)
W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 2.5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=1.7mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
3 6 7 10
IGSS ±100 nA VGS=20V, –10V
IDSS 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 5 10 S VDS=10V, ID=5A
RDS(ON)
150 200 mΩ VGS=10V, ID=5A
170 230 mΩ VGS=4V, ID=5A
Ciss 870 pF VDS=10V,
Coss 320 pF f=1.0MHz,
Crss 210 pF VGS=0V
td(on) 25 ns ID=5A,
tr 50 ns VDD 70V,
td(off) 75 ns RL=14Ω, VGS=5V,
tf 40 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=10A, VGS=0V
trr 500 ns IF=±100mA
1
4
9
12
2 5 8
Characteristic curves
11
ID (A)
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
7
10V
6 4V
5
2.8V
4
2.6V
3
ID (A)
(VDS=10V)
7
6
5
4
3
RDS (ON) (mΩ)
200
150
100
4V
VGS=10V
2
1
2.4V
VGS=2.2V
2
1
25°C
Tc=125°C
–40°C
50
0 0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
0
0 1 2 3 4 5 6 7
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
f=1MHz
20
500
(ID=3.5A)
5000
Re (yfs) (S)
10
5
TC=–40°C
125°C
25°C
RDS (ON) (mΩ)
400
300
200
4V
VGS=10V
Capacitance (pF)
1000
500
Ciss
1
0.5
0.3
0.05 0.1 0.5 1 5 7
ID (A)
100
0
–40 0 50 100 150
TC (°C)
100
Coss
Crss
50
40
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(TC=25°C)
All Circuits Operating
7
10
6
5
ID (pulse) MAX
20
100µs
1ms
60
50
10ms (1shot)
5
RDS (on) LIMITED
40
With Infinite Heatsink
IDR (A)
4
3
10V
4V
ID (A)
0.5
PT (W)
30
2
VGS=0V
0.1
1-Circuit Operation
20
1
0.05
10
Without Heatsink
0 0.01
0 0.5 1.0 1.5 0.5 1 5 10 50 100 200
VSD (V)
VDS (V)
0
0 50 100 150
Ta (°C)
98

SLA5079
P-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)
Symbol Ratings Unit Symbol
Specification
min typ max
Unit Conditions
VDSS –60 V V(BR)DSS –60 V ID=–100µA, VGS=0V
VGSS ±20 V IGSS ±10 nA VGS=±20V
ID –10 A IDSS –100 µA VDS=–60V, VGS=0V
ID(pulse) –15 (PW≤1ms, duty≤25%) A VTH –1.0 –2.0 V VDS=–10V, ID=–250µA
PT
4.5 (Ta=25°C, with all circuits operating, without heatsink)
Re(yfs) 8.7 S VDS=–10V, ID=–5A
W
30 (Tc=25°C,with all circuits operating, with infinite heatsink)
RDS(ON) 0.14 Ω VGS=–10V, ID=–5A
θ j-a 27.8 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 1200 pF VDS=–10V,
θ j-c 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 440 pF f=1.0MHz,
VISO 1000 (Between fin and lead pin, AC) Vrms Crss 120 pF VGS=0V
Tch 150 °C td(on) 50 ns ID=–5A, VDD –20V,
Tstg –40 to +150 °C
tr 170 ns RL=4Ω, VGS=–5V,
td(off) 180 ns RG=50Ω,
tf 100 ns see Fig. 4 on page 16.
VSD –1.25 V ISD=–10A, VGS=0V
■Equivalent circuit diagram
trr 100 ns ISD=–5A, di/dt=100A/µs
1
5
12
2
6
11
3
Characteristic curves
7
10
–15
–14
–12
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
Ta=25°C
(Ta=25°C)
(VDS=–10V)
VGS=–10V
–10V
–4.0V
–15
–14
–12
TC=125°C
–40°C
0.20
0.16
ID (A)
–10
–8
–6
–3.5V
–3.3V
ID (A)
–10
–8
–6
25°C
RDS (ON) (Ω)
0.12
0.08
–4
–2
–3.0V
VGS=–2.7V
–4
–2
0.04
Re (yfs) (S)
IDR (A)
0
0 –2 –4 –6 –8
VDS (V)
–15
–14
–12
–10
–8
–6
–10
0
0 –1 –2 –3 –4
VGS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
VGS=–10V
–4V
0V
(Ta=25°C)
RDS (ON) (Ω)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
–40 0
–5
50 100 150
TC (°C)
0
0 –2 –4 –6 –8 –10 –12 –14 –15
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=–5A
VGS=0V
(VDS=–10V)
VGS=–10V
–20
0.20
3000
(Ta=25°C) f=1MHz
–10
–1
–0.1
–0.1
Tc=–40°C
125°C
25°C
–1 –10 –20
ID (A)
ID (A)
–20
–10
–1
RDS (ON) LIMITED
(TC=25°C, SINGLE PULSE)
10 ms
100µs
1ms
Capacitance (pF)
1000
PT (W)
100
Ciss
Coss
Crss
10
–0 –10 –20 –30 –40 –50
VDS (V)
40
35
30
25
20
15
All Circuits Operating
With Infinite Heatsink
–4
10
–2
5
Without Heatsink
0
0.0 –0.5 –1.0 –1.5
VSD (V)
–0.1
–0.1 –1 –10 –100
VDS (V)
0
0 50 100 150
Ta (°C)
99

SLA5080
N-channel
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)
Symbol Ratings Unit Symbol
Specification
min typ max
Unit Conditions
VDSS 60 V V(BR)DSS 60 V ID=100µA, VGS=0V
VGSS ±20 V IGSS ±10 µA VGS=±20V
ID 10 A IDSS 100 µA VDS=60V, VGS=0V
ID(pulse) 15 (PW≤1ms, Du≤25%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
PT
4.5 (Ta=25°C, with all circuits operating, without heatsink)
Re(yfs) 8.0 S VDS=10V, ID=5A
W
30 (Tc=25°C,with all circuits operating, with infinite heatsink)
RDS(ON) 0.14 Ω VGS=4V, ID=5A
θ j-a 27.8 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 460 pF VDS=10V,
θ j-c 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 225 pF f=1.0MHz,
VISO 1000 (Between fin and lead pin, AC) Vrms Crss 50 pF VGS=0V
Tch 150 °C td(on) 25 ns ID=5A, VDD 20V,
Tstg –40 to +150 °C
tr 110 ns RL=4Ω,
td(off) 90 ns VGS=5V,
tf 55 ns see Fig. 4 on page 16.
VSD 1.15 V ISD=10A, VGS=0V
■Equivalent circuit diagram
trr 75 ns ISD=5A, di/dt=100A/µs
3
7
10
2
6
11
1
5
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
Ta=25°C
(Ta=25°C)
(VDS=20V)
VGS=4V
15
14
10V
4.0V
15
14
0.20
12
12
0.16
ID (A)
10
8
6
3.5V
3.3V
ID (A)
10
8
6
TC=25°C
RDS (ON) (Ω)
0.12
0.08
4
2
3.0V
VGS=2.7V
4
2
25°C
–40°C
0.04
0
0 2 4 6 8
VDS (V)
10
0
0 1 2 3 4 5
VGS (V)
0
0 2 4 6 8
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
20
(VDS=10V)
0.20
ID=5A
VGS=4V
2000
10
12 14 15
VGS=0V
(Ta=25°C) f=1MHz
Re (yfs) (S)
10
1
TC=–40°C
125°C
25°C
RDS (ON) (Ω)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
Capacitance (pF)
1000
100
Ciss
Coss
0.04
Crss
0.02
0.1
0.05
0.1 1 10
ID (A)
20
0
–40 0 50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
15
(Ta=25°C)
20
40
All Circuits Operating
100µs
IDR (A)
12
9
6
VGS=10V
4V
0V
ID (A)
10
1
RDS (ON) LIMITED
10ms
1ms
PT (W)
35
30
25
20
15
With Infinite Heatsink
3
TC=25°C
10
5
Without Heatsink
100
0
0 0.5 1.0 1.5
VSD (V)
0.1
Single Pulse
0.1 1 10 100
VDS (V)
0
0 50 100 150
Ta (°C)

SLA5081
N-channel
General purpose
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
Ratings
Symbol
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±7 A
ID (pulse) *1 ±15 A
(Ta=25°C)
EAS *2 100 mJ
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
47 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 2.66 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
*1 : PW≤100µs, duty≤1%
*2 : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Unit
3
8
10
12
14
FET1 FET2 FET2 FET2 FET2
2
7
9
11
13
1
Characteristic curves
15 Pins 4, 5, 6 : NC
7
6
10V
3.0V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
FET 1 FET 2 FET 1
7
7
2.6V
10V
6 4V
6
5
5
2.8V
5
ID (A)
4
3
2.4V
ID (A)
4
3
2.6V
ID (A)
4
3
2
2.2V
1
VGS=2.0V
0
0 2 4 6 8 10
VDS (V)
2
2.4V
1
VGS=2.2V
0
0 2 4 6 8 10
VDS (V)
2
1
25°C
TC=125°C
0
0 1 2 3 4
VGS (V)
–40°C
100
RDS(ON)-ID Characteristics (Typical)
FET 1 FET 2 FET 2
200
7
4V
(VDS=10V)
RDS (ON) (mΩ)
90
80
70
4V
VGS=10V
RDS (ON) (mΩ)
150
100
VGS=10V
ID (A)
6
5
4
3
60
50
2
1
25°C
Tc=125°C
–40°C
50
0 1 2 3 4 5 6 7
ID (A)
0
0 1 2 3 4 5 6 7
ID (A)
0
0 1 2 3 4
VGS (V)
200
RDS(ON)-TC Characteristics (Typical)
FET 1 (ID=3.5A)
500
FET 2
(ID=3.5A)
400
RDS (ON) (mΩ)
100
4V
VGS=10V
RDS (ON) (mΩ)
300
200
4V
VGS=10V
100
0
–40 0 50 100 150
TC (°C)
0
–40 0 50 100 150
TC (°C)
102

SLA5081
Electrical characteristics
(Ta=25°C)
FET 1 FET 2
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V
IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 7 12 S VDS=10V, ID=3.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
80 105 mΩ VGS=10V, ID=3.5A 150 200 mΩ VGS=10V, ID=3.5A
85 115 mΩ VGS=4V, ID=3.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 1600 pF VDS=10V, 870 pF VDS=10V
Coss 380 pF f=1.0MHz, 320 pF f=1.0MHz
Crss 90 pF VGS=0V 210 pF VGS=0V
td (on) 35 ns ID=3.5A, 25 ns ID=3.5A
tr 70 ns VDD 70V, 55 ns VDD 70V
td (off) 125 ns RL=20Ω, 80 ns RL=20Ω
tf 90 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 320 ns IF=±100mA 500 ns IF=±100mA
Characteristic curves
100
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
FET 1 FET 2 FET 1
(VDS=10V)
(VDS=10V)
(TC=25°C)
20
20
100µs
Re (yfs) (S)
10
TC=–40°C
25°C
125°C
Re (yfs) (S)
10
5
TC=–40°C
125°C
25°C
ID (A)
10
5
1
0.5
ID (pulse) MAX
RDS (on) LIMITED
1ms
10ms (1shot)
1
1
0.1
1-Circuit Operation
0.05
0.5
Capacitance (pF)
10000
1000
IDR (A)
0.1
0.05 0.1 1 7
100
50
0.3
0.05 0.1 0.5 1 5 7
ID (A)
ID (A)
VDS (V)
Capacitance-VDS Characteristics (Typical)
FET 1 VGS=0V
FET 2 VGS=0V
FET 2
f=1MHz
f=1MHz
5000
(TC=25°C)
20
10
5
ID (pulse) MAX
1000
Ciss
500
0.5
0.1
1-Circuit Operation
Coss
0.05
100
Crss
50
40
0.01
0 10 20 30 40 50
0 10 20 30 40 50
0.5 1 5 10 50 100 200
VDS (V)
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
FET 1 FET 2
7
All Circuits Operating
7
50
6
6
40
5
5
10V
4
4V
4
30
VGS=0V
3
3
20
VGS=0V
2
2
1
1
10
Without Heatsink
0 0
0 0.5 1.0 1.5 0 0.5 1.0 1.5
VSD (V)
Ciss
Coss
Crss
Capacitance (pF)
IDR (A)
10V
4V
VSD (V)
ID (A)
PT (W)
0.01
0.5 1 5 10 50 100 200
RDS (on) LIMITED
1ms
10ms (1shot)
With Infinite Heatsink
100µs
0
0 50 100 150
Ta (°C)
103

SLA5085
N-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)
Symbol Ratings Unit Symbol
Specification
min typ max
Unit Conditions
VDSS 60 V V(BR)DSS 60 V ID=100µA, VGS=0V
VGSS ±20 V IGSS ±100 nA VGS=±20V
ID 10 A IDSS 100 µA VDS=60V, VGS=0V
ID(pulse) 10 (PW≤1ms, duty≤25%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
EAS * 30 mJ Re(yfs) 3.7 5.5 S VDS=10V, ID=3A
PT
5 (Ta=25°C, with all circuits operating, without heatsink)
RDS(ON) 0.16 0.22 Ω VGS=4V, ID=3A
W
30 (Tc=25°C, with all circuits operating, with infinite heatsink)
Ciss 320 pF VDS=10V,
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 160 pF f=1.0MHz,
θ j-c 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Crss 35 pF VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms td(on) 16 ns ID=3A, VDD 20V,
Tch 150 °C
tr 65 ns RL=6.67Ω,
Tstg –40 to +150 °C td(off) 70 ns VGS=5V,
* : VDD=40V, L=20mH, ID=1A, unclamped, RG=50Ω, see Fig. E on page 15.
tf 45 ns see Fig. 3 on page 16.
VSD 1.05 1.5 V ISD=5A, VGS=0V
■Equivalent circuit diagram
trr 65 ns ISD=3A, VGS=0V, di/dt=100A/µs
3
5
7
9
11
2
4
6
8
10
1
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(Ta=25°C)
(VDS=10V)
(Ta=25°C)
10
4V
10
0.30
8
10V
3.7V
3.5V
8
0.25
ID (A)
6
4
3.3V
3.0V
ID (A)
6
4
Ta=125°C
RDS (ON) (Ω)
0.20
0.15
0.10
4V
VGS=10V
2
2.7V
VGS=2.5V
2
–40°C
25°C
0.05
0
0 2 4 6 8
VDS (V)
10
0
0 1 2 3 4 5
VGS (V)
0
0 2 4 6 8 10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
(ID=3A)
(Ta=25°C) f=1MHz
50
0.35
1000
0.30
Re (yfs) (S)
10
1
125°C
Ta= –40°C
25°C
RDS (ON) (Ω)
0.25
0.20
0.15
0.10
VGS=10V
10V
Capacitance (pF)
100
Ciss
Coss
0.05
Crss
0.1
0.05
0.1 1
ID (A)
10
0.00
–40 0 50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(Ta=25°C)
All Circuits Operating
10
20
40
8
10
100µs
35
30
IDR (A)
6
4
VGS=10V
4V
0V
ID (A)
1
RDS (ON) LIMITED
10ms (1shot)
1ms
PT (W)
25
20
15
With Infinite Heatsink
2
0
0 0.5 1.0 1.5
VSD (V)
TC=25°C
1-Circuit Operation
0.1
0.1 1 10 100
VDS (V)
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
104

SLA5086 P-channel
General purpose
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)
Symbol Ratings Unit Symbol
Specification
min typ max
Unit Conditions
VDSS –60 V V(BR)DSS –60 V ID=–100µA, VGS=0V
VGSS ±20 V IGSS ±100 nA VGS=±20V
ID –5 A IDSS –100 µA VDS=–60V, VGS=0V
ID(pulse) –10 (PW≤1ms, duty≤25%) A VTH –1.0 –2.0 V VDS=–10V, ID=–250µA
PT
5 (Ta=25°C, with all circuits operating, without heatsink)
Re(yfs) 4 6 S VDS=–10V, ID=–3A
W
30 (Tc=25°C,with all circuits operating, with infinite heatsink)
RDS(ON) 0.14 0.22 Ω VGS=–10V, ID=–3A
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 790 pF VDS=–10V,
θ j-c 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 310 pF f=1.0MHz,
VISO 1000 (Between fin and lead pin, AC) Vrms Crss 90 pF VGS=0V
Tch 150 °C td(on) 40 ns ID=–3A, VDD –20V,
Tstg –40 to +150 °C
tr 110 ns RL=6.67Ω,
td(off) 160 ns VGS=–5V,
tf 80 ns see Fig. 4 on page 16.
VSD –1.0 –1.5 V ISD=–5A, VGS=0V
■Equivalent circuit diagram
trr 85 ns ISD=3A, VGS=0V, di/dt=100A/µs
1
12
2
4
6
8
10
3
5
7
9
11
Characteristic curves
–10
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(Ta=25°C)
(VDS=–10V)
(Ta=25°C)
–10V
–4V
–3.7V
–8
–8
–10
0.30
0.25
–4V
ID (A)
–6
–4
–3.5V
–3.3V
–3.0V
ID (A)
–6
–4
Ta=125°C
RDS (ON) (Ω)
0.20
0.15
0.10
VGS=–10V
–2
–2.7V
VGS=–2.5V
0
0 –2 –4 –6 –8 –10
VDS (V)
–2
25°C
–40°C
0
0 –1 –2 –3 –4 –5
VGS (V)
0.05
0
0 –2 –4 –6 –8 –10
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=–10V)
(ID=–3A)
(Ta=25°C) f=1MHz
50
0.35
5000
0.30
Re (yfs) (S)
10
1
Ta = –40°C
125°C
25°C
RDS (ON) (Ω)
0.25
0.20
0.15
0.10
VGS = –4V
–10V
Capacitance (pF)
1000
100
Ciss
Coss
Crss
0.05
0.1
–0.05
–0.1 –1
ID (A)
–10
0
–40 0 50 100 150
TC (°C)
10
0 –10 –20 –30 –40 –50
VDS (V)
–10
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(Ta=25°C)
All Circuits Operating
–20
40
–10
100µs
35
–8
1ms
30
10ms
IDR (A)
–6
–4
VGS= –10V
–4V
ID (A)
–1
RDS (ON) LIMITED
PT (W)
25
20
15
With Infinite Heatsink
0V
–2
0
0 –0.5 –1.0 –1.5
VSD (V)
TC=25°C
1-Circuit Operation
–0.1
–0.1 –1 –10 –100
VDS (V)
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
105

SLA5088
N-channel
General purpose
External dimensions A • • • SLA (15-pin)
Absolute maximum ratings
Ratings
Symbol
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±5 ±7 A
ID (pulse) *1 ±10 ±15 A
PT
5 (Ta=25°C, with all circuits operating, without heatsink) W
43 (Tc=25°C, with all circuits operating, with infinite heatsink) W
(Ta=25°C)
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 2.91 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : PW≤100µs, duty≤50%
Unit
■Equivalent circuit diagram
3
8
10
12
14
FET1 FET2 FET2 FET2 FET2
2
7
9
11
13
1
Characteristic curves
15
Pins 4, 5, 6 : NC
5
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
FET 1 FET 2 FET 1
7
7
(VDS=10V)
4
10V
4V
6
10V
4V
6
5
2.8V
5
ID (A)
3
2
2.8V
2.6V
ID (A)
4
3
2.6V
ID (A)
4
3
1
2.4V
VGS=2.2V
2
1
2.4V
VGS=2.2V
2
1
25°C
Tc=125°C
–40°C
0 0 2 4 6 8 10
VDS (V)
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
500
RDS(ON)-ID Characteristics (Typical)
FET 1 FET 2 FET 2
200
4V
5
(VDS=10V)
400
4V
150
VGS=10V
4
RDS (ON) (mΩ)
300
200
VGS=10V
RDS (ON) (mΩ)
100
ID (A)
3
2
100
50
1
25°C
Tc=125°C
–40°C
0 0 1 2 3 4 5
ID (A)
0
0 1 2 3 4 5 6 7
ID (A)
0
0 1 2 3 4
VGS (V)
1.0
RDS(ON)-TC Characteristics (Typical)
FET 1 FET 2
(ID=2.5A)
500
(ID=3.5A)
400
RDS (ON) (Ω)
0.5
4V
VGS=10V
RDS (ON) (mΩ)
300
200
4V
VGS=10V
100
0
–40 0 50 100 150
TC (°C)
0
–40 0 50 100 150
TC (°C)
106

RDS(ON)
SLA5088
Electrical characteristics
(Ta=25°C)
FET 1 FET 2
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V 100 nA VGS=20V
IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A
370 480 mΩ VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 380 pF VDS=10V, 870 pF VDS=10V,
Coss 95 pF f=1.0MHz, 320 pF f=1.0MHz,
Crss 25 pF VGS=0V 210 pF VGS=0V
td (on) 25 ns ID=2.5A, 25 ns ID=3.5A,
tr 50 ns VDD 70V, 55 ns VDD 70V,
td (off) 55 ns RL=28Ω, 80 ns RL=20Ω,
tf 40 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 180 ns IF=±100mA 500 ns IF=±100mA
Characteristic curves
Re (yfs) (S)
10
5
1
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
FET 1 FET 2 FET 1
(VDS=10V)
(VDS=10V)
TC=–40°C
125°C
25°C
Re (yfs) (S)
20
10
5
1
TC=–40°C
125°C
25°C
ID (A)
20
10
5
1
0.5
0.1
ID (pulse) MAX
RDS (on) LIMITED
100µs
1ms
10ms (1shot)
1-Circuit Operation
(TC=25°C)
0.5
0.5
0.05
Capacitance (pF)
IDR (A)
0.05 0.1 0.5 1 5
0.05 0.1 0.5 1 5 7
100
0.5 1 5 10 50 200
ID (A)
ID (A)
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
VGS=0V
FET 1 FET 2 FET 2
1000
f=1MHz
f=1MHz
5000
(TC=25°C)
20
10
500
5
ID (pulse) MAX
Ciss
1000
Ciss
500
0.5
100
Coss
50
0.1
1-Circuit Operation
Coss
100
0.05
Crss
Crss
50
10
40
0 10 20 30 40 50
0 10 20 30 40 50
100
0.5 1 5 10 50 200
VDS (V)
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
FET 1 FET 2
50
All Circuits Operating
5
7
6
4
40
5
3
4
30
3
2
20
VGS=0V
VGS=0V
2
1
10
1
Without Heatsink
10V
4V
VSD (V)
Capacitance (pF)
IDR (A)
10V
4V
VSD (V)
ID (A)
PT (W)
RDS (on) LIMITED
With Infinite Heatsink
10ms (1shot)
0
0 50 100 150
Ta (°C)
1ms
100µs
107

SLA6012
PNP + NPN Darlington
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
IB 0.5 –0.5 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W
■Equivalent circuit diagram
R2 R3
1
2
4
8
9
3 7
6
11
10
R1
5 12 R1: 3kΩ typ R2: 2kΩ typ R3: 150Ω typ
Characteristic curves
IC (A)
6
4
IB=4.0mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
2.0mA
1.0mA
0.6mA
0.4mA
IC (A)
–6
–4
IB=–2.2mA
–1.8mA
–1.5mA
–1.2mA
–1.0mA
–0.9mA
–0.8mA
IC (A)
6
5
4
3
(VCE=4V)
2
0.3mA
–2
2
1
75°C
Ta=125°C
25°C
–30°C
0
0 2 4 6
VCE (V)
0
0 –2 –4 –6
VCE (V)
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
20000
–6
(VCE=–4V)
10000
5000
typ
10000
5000
typ
–5
–4
hFE
1000
500
hFE
1000
500
IC (A)
–3
–2
100
50
30
0.03 0.05 0.1 0.5 1 5 6
IC (A)
100
50
30
–0.03 –0.05 –0.1 –0.5 –1 –5 –6
IC (A)
–1
Ta=125°C
75°C
25°C
–30°C
0
0 –1 –2 –3
VBE (V)
hFE-IC Temperature Characteristics (Typical)
20000
NPN
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
10000
5000
5000
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
hFE
1000
500
Ta=125°C
–30°C
75°C
25°C
100
100
50
30
0.03 0.05 0.1 0.5 1 5 6
IC (A)
50
30
–0.03 –0.05 –0.1 –0.5 –1 –5 –6
IC (A)
108

1ms
1ms
SLA6012
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 2000 VCE=4V, IC=3A 2000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
2
1
IC=2A
IC=1A
IC=4A
VCE (sat) (V)
–2
–1
IC=–2A
IC=–1A
IC=–4A
θj–a (°C / W)
5
1
0
0.1 0.5
1 5 10 50 100
IB (mA)
0
–0.3 –0.5
–1 –5 –10 –50 –100
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
VCE (sat) (V)
3
2
1
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
–3
Ta=125°C
25°C
75°C
–30°C
VCE (sat) (V)
–2
–1
Ta=–30°C
(IC / IB=1000)
25°C
75°C
PT (W)
25
20
15
10
PT-Ta Characteristics
With Infinite Heatsink
100×100×2
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
125°C
5
Without Heatsink
50×50×2
0
0.5
1 5 6
IC (A)
0
–0.5
–1 –5 –6
IC (A)
0
–40 0 50 100 150
Ta (°C)
10
NPN
Safe Operating Area (SOA)
–10
PNP
5
–5
10ms
10ms
IC (A)
1
0.5
IC (A)
–1
–0.5
0.1
–0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10
VCE (V)
50
100
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10
VCE (V)
–50
–100
109

SLA6020
PNP + NPN Darlington
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 100 –100 V
VCEO 100 –100 V
VEBO 6 –6 V
IC 5 –5 A
ICP 8 (PW≤1ms, Du≤50%) –8 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W
■Equivalent circuit diagram
1
R3
R4
2 8 9
3
7
10
4
6
11
R1
R2
5 12
Characteristic curves
R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ
IC (A)
5
4
3
2
1
IB=2mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
1mA 0.8mA 0.7mA 0.6mA
0.5mA
0.4mA
IC (A)
–8
IB=–4mA
–7
–6
–5
–4
–3
–2
–1
–2mA
–1.2mA
–0.8mA
–0.6mA
–0.4mA
IC (A)
5
4
3
2
1
75°C
Ta=125°C
25°C
–30°C
(VCE=2V)
0
0 1 2 3 4 5
VCE (V)
0
0 –1 –2 –3 –4 –5
VCE (V)
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN
(VCE=4V)
PNP
(VCE=–4V)
PNP
20000
–8
(VCE=–4V)
10000
typ
10000
5000
5000
typ
–6
hFE
1000
500
hFE
1000
500
IC (A)
–4
100
50
30
0.03 0.05 0.1 0.5 1 5 8
IC (A)
100
50
30
–0.03 –0.05 –0.1 –0.5 –1 –5
IC (A)
–8
–2
Ta=125°C
75°C
25°C
–30°C
0
0 –1 –2 –3
VBE (V)
hFE-IC Temperature Characteristics (Typical)
20000
NPN
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
10000
hFE
5000
75°C
1000
25°C
500
100
50
30
0.02 0.05 0.1 0.5 1 5 8
IC (A)
Ta=125°C
–30°C
hFE
5000
1000
500
Ta=125°C
–30°C
75°C
25°C
100
50
30
–0.03 –0.05 –0.1 –0.5 –1 –5 –8
IC (A)
110

SLA6020
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=100V –10 µA VCB=–100V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 100 V IC=10mA –100 V IC=–10mA
hFE 2000 VCE=4V, IC=3A 2000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
Characteristic curves
NPN
VCE(sat)-IB Characteristics (Typical)
PNP
θ j-a-PW Characteristics
3
–3
20
10
VCE (sat) (V)
2
1
IC=1A
IC=5A
IC=3A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–3A
IC=–5A
θ j–a (°C / W)
5
1
0
0
0.2 0.5 1 5 10 50
–0.2 –0.5 –1 –5 –10 –50 –100 –500
IB (mA)
IB (mA)
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
2
–3
VCE (sat) (V)
1
25°C
75°C
125°C
Ta=–30°C
VCE (sat) (V)
–2
–1
75°C
125°C
25°C Ta=–30°C (IC / IB=1000)
PT (W)
0.5
1 5 10 50 100 500 1000
PW (mS)
25
20
15
10
5
PT-Ta Characteristics
Without Heatsink
100×100×2
50×50×2
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
With Infinite Heatsink
0
0.5
1 5
IC (A)
0
–0.3 –0.5
–1 –5 –8
IC (A)
0
–40 0 50 100 150
Ta (°C)
NPN
Safe Operating Area (SOA)
PNP
10
–10
100µs
100µs
5
–5
1ms
1ms
10ms
10ms
IC (A)
1
0.5
IC (A)
–1
–0.5
0.1
–0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10
VCE (V)
50
100
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10
VCE (V)
–50
–100
111

SLA6022
PNP + NPN Darlington
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 100 –100 V
VCEO 80 –100 V
VEBO 6 –6 V
IC 5 –5 A
IB 0.5 –0.5 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W
■Equivalent circuit diagram
R2 R3
1
2
4
8
9
3 7
6
11
10
R1
5 12
R1: 2.5kΩ typ R2: 2.5kΩ typ R3: 200Ω typ
Characteristic curves
IC (A)
8
7
6
5
4
3
IB=20mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
6mA
2mA
1mA
0.6mA
0.4mA
IC (A)
–8
–7
–6
–5
–4
–3
IB=–4mA
–2mA
–1.2mA
–0.8mA
–0.6mA
IC (A)
8
6
4
(VCE=4V)
2
1
0
0 1 2 3 4 5
VCE (V)
–2
–0.4mA
–1
0
0 –1 –2 –3 –4 –5
VCE (V)
2
75°C
Ta=125°C
25°C
–30°C
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
20000
–8
(VCE=–4V)
10000
5000
typ
10000
5000
typ
–6
hFE
1000
hFE
1000
IC (A)
–4
500
500
–2
100
50
0.03 0.05 0.1 0.5 1 5 8
IC (A)
100
50
–0.03 –0.05 –0.1 –0.5 –1 –5 –8
IC (A)
Ta=125°C
75°C
25°C
0
0 –1 –2 –3
VBE (V)
–30°C
hFE-IC Temperature Characteristics (Typical)
20000
NPN
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
10000
5000
5000
hFE
1000
Ta=125°C
75°C
25°C
-30°C
hFE
1000
Ta=125°C
75°C
–30°C
25°C
500
500
100
100
50
0.03 0.1 0.5 1 5 8
IC (A)
50
–0.03 –0.1 –0.5 –1 –5 –8
IC (A)
112

SLA6022
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=100V –10 µA VCB=–100V
IEBO 10 µA VEB=6V –10 mA VEB=–6V
VCEO 80 V IC=10mA –100 V IC=–10mA
hFE 2000 VCE=4V, IC=3A 2000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
VFEC V 1.3 V IFEC=1A
trr µs 2.0 µs IFEC=±100mA
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
2
1
IC=1A
IC=3A
IC=5A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–3A
IC=–5A
θ j–a (°C / W)
5
1
0
0.2 0.5
1 5 10 50 100
IB (mA)
0
–0.2 –0.5
–1 –5 –10 –50 –100
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
3
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
–3
75°C
25°C
(IC / IB=1000)
25
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
VCE (sat) (V)
2
1
Ta=125°C
–30°C
VCE (sat) (V)
–2
–1
25°C
75°C
125°C
Ta=–30°C
PT (W)
15
10
Without Heatsink
5
100×100×2
50×50×2
With Infinite Heatsink
0
0.3 0.5
1 5 8
IC (A)
0
–0.3 –0.5
–1 –5 –8
IC (A)
0
–40 0 50 100 150
Ta (°C)
10
NPN
Safe Operating Area (SOA)
–10
PNP
5
–5
1ms
10ms
1ms
IC (A)
1
0.5
IC (A)
–1
–0.5
10ms
0.1
–0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10
VCE (V)
50
100
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10
VCE (V)
–50
–100
113

SLA6023
PNP + NPN Darlington
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 6 –6 A
ICP 12 (PW≤1ms, Du≤50%) –12 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
■Equivalent circuit diagram
R2 R3
1
2
4
8
9
3 7
6
11
10
R1
5 12
R1: 2kΩ typ R2: 3kΩ typ R3: 80Ω typ
Characteristic curves
12
10
8
IB=100mA
30mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
10mA
5mA
2mA
–12
–5mA
IB=–10mA
–10
–8
–3mA
–2mA
12
10
8
(VCE=4V)
IC (A)
6
1mA
IC (A)
–6
–1mA
IC (A)
6
4
–4
4
0.5mA
2
0
0 2 4 6
VCE (V)
–0.5mA
–2
0
0 –2 –4 –6
VCE (V)
2
Ta=125°C
75°C
25°C
–30°C
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN
(VCE=4V)
PNP
(VCE=–4V)
PNP
20000
–12
(VCE=–4V)
10000
5000
typ
10000
5000
typ
–10
–8
hFE
hFE
IC (A)
–6
1000
1000
–4
500
500
–2
Ta=125°C
75°C
25°C
–30°C
200
0.1 0.5 1 5 10
IC (A)
12
200
–0.1 –0.5 –1 –5 –10 –12
IC (A)
0
0 –1 –2 –3
VBE (V)
hFE-IC Temperature Characteristics (Typical)
20000
NPN
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
10000
Ta=125°C
5000
5000
hFE
1000
Ta=125°C
75°C
25°C
–30°C
hFE
1000
75°C
25°C
–30°C
500
500
200
0.1 0.5 1 5 10 12
IC (A)
200
–0.1 –0.5 –1 –5 –10 –12
IC (A)
114

100µs
SLA6023
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=25mA –60 V IC=–25mA
hFE 2000 5000 12000 VCE=4V, IC=5A 2000 5000 12000 VCE=–4V, IC=–5A
VCE(sat) 1.5 V –1.5 V
IC=5A, IB=10mA
VBE(sat) 2.0 V –2.0 V
IC=–5A, IB=–10mA
VFEC V 2.0 V IFEC=5A
trr µs 1.0 µs IFEC=±0.5A
ton 0.8 µs VCC 25V, 1.0 µs VCC –25V,
tstg 6.0 µs IC=5A, 1.4 µs IC=–5A,
tf 2.0 µs IB1=–IB2=10mA 0.6 µs IB1=–IB2=–10mA
fT 80 MHz VCE=12V, IE=–1A 120 MHz VCE=–12V, IE=1A
Cob 100 pF VCB=10V, f=1MHz 150 pF VCB=–10V, f=1MHz
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
2
IC=8A
VCE (sat) (V)
–2
IC=–8A
θ j–a (°C / W)
5
1
IC=2A
IC=4A
–1
IC=–4A
IC=–2A
1
0.6
0.2 0.5
1 5 10 50 100 200
IB (mA)
0.6
–0.2 –0.5 –1 –5 –10 –50 –100 –200
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
3
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
–3
(IC / IB=1000)
25
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
VCE (sat) (V)
2
1
–30°C
75°C
25°C
Ta=125°C
VCE (sat) (V)
–2
–1
25°C
75°C
125°C
Ta=–30°C
PT (W)
15
10
Without Heatsink
5
100×100×2
50×50×2
With Infinite Heatsink
0
0.1 0.5
1 5 10 20
IC (A)
0
–0.1 –0.5
–1 –5 –10 –20
IC (A)
0
–40 0 50 100 150
Ta (°C)
20
NPN
Safe Operating Area (SOA)
–20
PNP
10
–10
100µs
5
1ms
–5
10ms
1ms
10ms
IC (A)
1
IC (A)
–1
0.5
–0.5
Single Pulse
Without Heatsink
Ta=25°C
0.1
3 5 10
VCE (V)
50
100
Single Pulse
Without Heatsink
Ta=25°C
–0.1
–3 –5 –10
VCE (V)
–50
–100
115

SLA6024
PNP + NPN Darlington
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 8 –8 A
ICP 12 (PW≤1ms, Du≤50%) –12 (PW≤1ms, Du≤50%) A
IFEC — –8 A
IFECP — –12 A
IB 0.5 –0.5 A
PT
5 (Ta=25°C)
W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W
■Equivalent circuit diagram
1
R1 R2
2
4
8
9
3 7
6
11
10
R3
5 12
R1: 2kΩ typ R2: 80Ω typ R3: 2kΩ typ
Characteristic curves
IC (A)
8
7
6
5
4
3
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
IB=5mA
1.0mA
0.7mA
IC (A)
–8
IB=–5mA
–7
IB=–2mA
–6
–5
–4
IB=–1mA
–3
IC (A)
8
7
6
5
4
3
Ta=–20°C
25°C
75°C
125°C
(VCE=4V)
2
1
0.5mA
–2
–1
IB=–0.6mA
2
1
10000
0 1 2 3 4 5 6
VCE (V)
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
10000
–8
typ
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
typ
0 0 0.5 1 1.5 2 2.5 3
–7
VBE (V)
(VCE=–4V)
–6
1000
1000
–5
hFE
100
hFE
100
IC (A)
–4
–3
Ta=–20°C
25°C
75°C
125°C
–2
–1
10
0.01 0.1 1 10 12
IC (A)
10000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10
–0.01 –0.1 –1 –10 –12
IC (A)
10000
PNP
(VCE=–4V)
0 0 –0.5 –1 –1.5 –2 –2.5 –3
VBE (V)
hFE
1000
75°C
Ta=125°C
25°C
–20°C
hFE
1000
75°C
Ta=125°C
25°C
–20°C
100
100
10
0.01 0.1 1 1012
IC (A)
10
–0.01 –0.1 –1 –10–12
IC (A)
116

SLA6024
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 2000 5000 12000 VCE=4V, IC=5A 2000 5000 12000 VCE=–4V, IC=–5A
VCE(sat) 1.5 V –1.5 V
IC=5A, IB=10mA
VBE(sat) 2.0 V –2.0 V
IC=–5A, IB=–10mA
VFEC — V 2.0 V IFEC=5A
trr — µs 1.0 µs IFEC=±0.5A
ton 0.5 µs VCC 25V, 0.5 µs VCC –25V,
tstg 2.0 µs IC=5A, 1.4 µs IC=–5A,
tf 1.2 µs IB1=–IB2=10mA 0.6 µs IB1=–IB2=–10mA
fT 50 MHz VCE=12V, IE=–1A 100 MHz VCE=–12V, IE=1A
Cob 100 pF VCB=10V, f=1MHz 130 pF VCB=–10V, f=1MHz
Characteristic curves
3
VCE(sat)-IB Temperature Characteristics (Typical)
NPN
PNP
(IC=5A)
–3
(IC=–5A)
20
θ j-a-PW Characteristics
2.5
–2.5
10
VCE (sat) (V)
2
1.5
1
Ta=25°C
Ta=–20°C
VCE (sat) (V)
–2
–1.5
–1
Ta=25°C
Ta=–20°C
θ j–a (°C / W)
5
0.5
Ta=75°C
0
0.5 1
Ta=125°C
10 100
IB (mA)
–0.5
Ta=75°C
Ta=125°C
0
–0.5 –1 –10 –100
IB (mA)
1
0.5
1 5 10 50 100 500 1000
PW (mS)
2
1.5
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IB=10mA)
–2
–1.5
(IB=–10mA)
25
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
VCE (sat) (V)
1
Ta=25°C
Ta=–20°C
VCE (sat) (V)
–1
Ta=25°C
Ta=–20°C
PT (W)
15
10
100×100×2
With Infinite Heatsink
0.5
Ta=75°C
Ta=125°C
0
0.01 0.1 1 10 12
IC (A)
–0.5
20
NPN
Safe Operating Area (SOA)
PNP
10
100µs
1mS
10mS
1
IC (A)
Ta=125°C
Ta=75°C
0
–0.01 –0.1 –1 –10 –12
IC (A)
5
Without Heatsink
50×50×2
0
–40 0 50 100 150
Ta (°C)
–20
–10
100µs
1mS
10mS
–1
IC (A)
0.1
–0.1
Single Pulse
Without Heatsink
Ta=25°C
0.01
1 5 10 50 100
VCE (V)
Single Pulse
Without Heatsink
Ta=25°C
–0.01
–1 –5 –10 –50 –100
VCE (V)
117

SLA6026
PNP + NPN Darlington
3-phase motor drive
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 10 –10 A
ICP 15 (PW≤1ms, Du≤50%) –15 (PW≤1ms, Du≤50%) A
IFEC — –10 A
IFECP — –15 A
IB 0.5 –0.5 A
PT
5 (Ta=25°C)
W
35 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 3.57 °C/W
■Equivalent circuit diagram
R1 R2
1
2
4
8
9
3 7
6
11
10
R3
R1: 2kΩ typ R2: 80Ω typ R3: 2kΩ typ
Characteristic curves
IC (A)
10
9
8
7
6
5
4
3
IB=2mA
5 12
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
1mA
0.8mA
0.6mA
2
0.4mA
1
0
0 1 2 3 4 5 6
VCE (V)
IC (A)
–10
–9
–8
–7
–6
–5
–1mA
–4
–3
–2
–0.6mA
–1
0
0 –1 –2 –3 –4 –5 –6
IB=–5mA
–3mA
VCE (V)
–2mA
IC (A)
15
10
5
Ta=125°C
75°C
25°C
–30°C
(VCE=2V)
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
20000
–15
(VCE=–2V)
10000
typ
10000
5000
5000
typ
–10
hFE
1000
hFE
1000
IC (A)
500
500
–5
Ta=125°C
75°C
25°C
–30°C
100
0.1 1 10 15
IC (A)
100
–0.1 –1 –10 –15
IC (A)
0
0 –1 –2 –3
VBE (V)
hFE-IC Temperature Characteristics (Typical)
20000
NPN
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
Ta=125°C
75°C
25°C
–30°C
10000
IB=125°C
75°C
25°C
–30°C
hFE
1000
hFE
1000
100
0.1 1 10 15
IC (A)
100
–0.1 –1 –10 –15
IC (A)
118

SLA6026
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 2000 5000 12000 VCE=4V, IC=6A 2000 5000 12000 VCE=–4V, IC=–6A
VCE(sat) 1.5 V –1.5 V
IC=6A, IB=12mA
VBE(sat) 2.0 V –2.0 V
IC=–6A, IB=–12mA
VFEC – V 2.0 V IFEC=–6A
trr – µs 4.0 µs IFEC=±0.5A
ton 0.6 µs VCC 24V, 0.7 µs VCC –24V,
tstg 2.0 µs IC=6A, 1.2 µs IC=–6A,
tf 1.5 µs IB1=–IB2=12mA 0.7 µs IB1=–IB2=–12mA
fT 50 MHz VCE=12V, IE=–1A 50 MHz VCE=–12V, IE=1A
Cob 100 pF VCB=10V, f=1MHz 180 pF VCB=–10V, f=1MHz
Characteristic curves
3
VCE(sat)-IB Temperature Characteristics (Typical)
NPN
PNP
(IC=5A)
–3
(IC=–5A)
20
θ j-a-PW Characteristics
2.5
–2.5
10
VCE (sat) (V)
2
1.5
1
0.5
75°C
25°C
–30°C
IB=125°C
VCE (sat) (V)
–2
–1.5
–1
–0.5
75°C
25°C
–30°C
Ta=125°C
θ j–a (°C / W)
1
0
0.3 1 10 100 500
IB (mA)
0
–0.3 –1 –10 –100 –500
IB (mA)
0.3
1 10 100 1000 2000
PW (mS)
VCE (sat) (V)
3
2
1
–30°C
Ta=125°C
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IB=10mA)
(IB=–10mA)
–3
25°C 75°C
VCE (sat) (V)
–2
25°C
–1
–30°C
Ta=125°C75°C
PT (W)
40
30
20
10
PT-Ta Characteristics
100×100×2
50×50×2
Without Heatsink
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
0
0.01 0.1 1 10 15
IC (A)
0
–0.01 –0.1 –1 –10 –15
IC (A)
0
–40 0 50 100 150
Ta (°C)
20
NPN
Safe Operating Area (SOA)
–20
PNP
100µS
100µS
10
–10
1ms
1ms
IC (A)
1
IC (A)
–1
Single Pulse
Without Heatsink
Ta=25°C
0.1
1 5 10 50 100
VCE (V)
Single Pulse
Without Heatsink
Ta=25°C
–0.1
–1 –5 –10 –50 –100
VCE (V)
119

SLA8001
PNP + NPN
H-bridge
External dimensions A • • • SLA (12-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 12 –12 A
IB 3 –3 A
PT
5 (Ta=25°C)
W
40 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 3.12 °C/W
■Equivalent circuit diagram
4 8
R2
5
2
R1
3
6
7
10
9
12
1
11
R1: 500kΩ typ R2: 350Ω typ
Characteristic curves
12
10
IB=200mA
150mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
–12
100mA
–10
IB=–200mA
–150mA
–100mA
12
10
(VCE=1V)
8
60mA
–8
–60mA
8
IC (A)
6
40mA
IC (A)
–6
–40mA
IC (A)
6
4
20mA
10mA
2
0
0 1 2 3 4 5 6
VCE (V)
–4
–2
–20mA
–10mA
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
4
75°C
2
0
0 0.5 1.0 1.5
VBE (V)
Ta=125°C
25°C
–30°C
500
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=1V)
(VCE=–1V)
500
–12
(VCE=–1V)
typ
typ
–10
hFE
100
50
hFE
100
50
IC (A)
–8
–6
10
5
2
0.02 0.05 0.1 0.5 1
5 1012
IC (A)
10
5
2
–0.02 –0.05 –0.1 –0.5 –1 –5 –10 –12
IC (A)
–4
–2
Ta=125°C
75°C
25°C
–30°C
0
0 –0.5 –1.0 –1.5
VBE (V)
hFE-IC Temperature Characteristics (Typical)
500
NPN
(VCE=1V)
500
PNP
(VCE=–1V)
hFE
100
50
Ta=125°C
75°C
25°C
–30°C
hFE
100
50
Ta=125°C
75°C
25°C
–30°C
10
10
5
5
2
0.02 0.05 0.1 0.5 1
5 1012
IC (A)
2
–0.02 –0.05 –0.1 –0.5 –1 –5 –10 –12
IC (A)
120

1ms
1ms
SLA8001
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 100 µA VCB=60V –100 µA VCB=–60V
IEBO 60 mA VEB=6V –60 mA VEB=–6V
VCEO 60 V IC=25mA –60 V IC=–25mA
hFE 50 VCE=1V, IC=6A 50 VCE=–1V, IC=–6A
VCE(sat) 0.35 V IC=6A, IB=0.3A –0.35 V IC=–6A, IB=–0.3A
VFEC 2.5 V IFEC=10A 2.5 V IFEC=10A
Characteristic curves
NPN
VCE(sat)-IB Characteristics (Typical)
PNP
θ j-a-PW Characteristics
1.5
–1.5
10
5
VCE (sat) (V)
1.0
0.5
VCE (sat) (V)
–1.0
–0.5
IC=–12A
θ j–a (°C / W)
1
0
5
1A
10 50 100 500 1000 5000
IB (mA)
3A
6A
IC=12A
9A
0
–5
–9A
–6A
–3A
–1A
–10 –50 –100 –500 –1000
IB (mA)
–5000
0.5
0.3
1 5 10 50 100 500 1000
PW (mS)
1.0
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=20)
–1.0
(IC / IB=20)
40
30
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
VCE (sat) (V)
0.5
Ta=125°C
75°C
25°C
VCE (sat) (V)
–0.5
Ta=125°C
75°C
25°C
–30°C
PT (W)
–30°C
0
0.02 0.05 0.1 0.5 1 5 1012
IC (A)
NPN
Safe Operating Area (SOA)
PNP
30
10
10ms
5
IC (A)
20
10
With Infinite Heatsink
100×100×2
50×50×2mm
Without Heatsink
0
–0.02 –0.05 –0.1 –0.5 –1 –5 –10–12
IC (A)
0
–40 0
50 100 150
Ta (°C)
–30
–10
10ms
–5
IC (A)
1
–1
0.5
Single Pulse
Without Heatsink
Ta=25°C
0.2
3 5 10
VCE (V)
50
100
–0.5
Single Pulse
Without Heatsink
Ta=25°C
–0.2
–3 –5 –10
VCE (V)
–50
–100
121

SMA4020
PNP Darlington
General purpose
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –4 A
IB –1 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–60V
IEBO –10 mA VEB=–6V
VCEO –60 V IC=–10mA
hFE 2000 VCE=–4V, IC=–3A
VCE(sat) –1.5 V IC=–3A, IB=–6mA
■Equivalent circuit diagram
R1 R2
3
6
7
10
1
5
8
12
2
4
9
11
R1: 2kΩ typ R2: 150Ω typ
Characteristic curves
IC (A)
–6
–4
–2
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=–2.2mA
–1.8mA
–1.5mA
–1.2mA
–1.0mA
–0.9mA
–0.8mA
(VCE=–4V)
(VCE=–4V)
10000
10000
5000
typ
75°C
5000
25°C
hFE
1000
500
hFE
1000
500
Ta=125°C
–30°C
100
100
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
50
–0.03
–0.1 –0.5 –1 –5 –6
IC (A)
50
–0.03
–0.1 –0.5 –1 –5 –6
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=–4V)
–3
–3
–6
–5
VCE (sat) (V)
–2
–1
Ta=–30°C
25°C
75°C
VCE (sat) (V)
–2
–1
IC=–2A
IC=–4A
IC (A)
–4
–3
–2
75°C
25°C
Ta=125°C
–30°C
125°C
IC=–1A
–1
0
–0.5 –1 –5 –6
IC (A)
0
–0.2
–0.5 –1 –5 –10 –50 –100
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
20
–10
10
15
–5
10ms
1ms
θ j–a (°C / W)
5
PT (W)
10
With Infinite Heatsink
IC (A)
–1
–0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
0
–40 0 50 100 150
Ta (°C)
–0.1
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100
VCE (V)
122

SMA4021
PNP Darlington
With built-in flywheel diode
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –3 A
ICP –6 (PW≤1ms, Du≤50%) A
IB –0.5 A
IF –6 (PW≤0.5ms, Du≤25%) A
IFSM –8 (PW≤10ms, Single pulse) A
VR 100 V
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–60V
IEBO –10 mA VEB=–6V
VCEO –60 V IC=–10mA
hFE 2000 5000 12000 VCE=–4V, IC=–2A
VCE(sat) –1.5 V
VBE(sat) –2.0 V
IC=–2A, IB=–4mA
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
min
Specification
typ max
Unit Conditions
VR 100 V IR=10µA
VF 1.2 V IF=1A
IR 10 µA VR=100V
trr 100 ns IF=±100mA
6
7
R1 R2
1
5
8
12
2 3 4
9 10 11
R1: 2kΩ typ R2: 150Ω typ
Characteristic curves
IC (A)
–6
–4
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=–2.2mA
–1.8mA
–1.5mA
–1.2mA
–1.0mA
–0.9mA
–0.8mA
hFE
10000
5000
1000
500
(VCE=–4V)
(VCE=–4V)
10000
typ
5000
hFE
1000
500
Ta=125˚C
–30˚C
–2
75˚C
100
100
25˚C
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
50
–0.03
–0.05 –0.1 –0.5 –1 –5 –6
IC (A)
50
–0.03
–0.05 –0.1 –0.5 –1 –5 –6
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=–4V)
–3
–3
–6
–5
VCE (sat) (V)
–2
–1
Ta=–30°C
25°C
75°C
VCE (sat) (V)
–2
–1
IC=–1A
IC=–2A
IC=–4A
IC (A)
–4
–3
–2
Ta=125°C
–30°C
75°C
25°C
125°C
–1
0
–0.5 –1 –5 –6
IC (A)
0
–0.2 –0.5 –1 –5 –10 –50
IB (mA)
–100
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
20
–10
–5
10
15
1ms
100µs
10µs
With Infinite Heatsink
10ms
θ j–a (°C / W)
5
PT (W)
10
IC (A)
–1
–0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
0
–40 0 50 100 150
Ta (°C)
–0.1
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100
VCE (V)
123

SMA4030
NPN Darlington
General purpose
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 3 A
ICP 5 (PW≤1ms, Du≤50%) A
IB 0.2 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 100 V IC=25mA
hFE 2000 6000 15000 VCE=4V, IC=1.5A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.7 2.0 V
IC=1.5A, IB=3mA
ton 0.5 µs VCC 30V
tstg 2.2 µs IC=1.5A
tf 0.9 µs IB1=–IB2=3mA
fT 40 MHz VCE=12V, IE=–0.5A
Cob 30 pF VCB=10V, f=1MHz
2
4
9
11
1
5
8 12
R1
R2
3
6
7
10
R1: 3kΩ typ R2: 200Ω typ
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
(VCE=4V)
5
4
3
2
IB=10mA
2mA
1mA
0.6mA
0.4mA
0.3mA
hFE
20000
75°C
10000
typ
10000
25°C
5000
5000
1000
500
hFE
20000
1000
500
Ta=125°C
–30°C
1
100
100
0
0
1 2 3
VCE (V)
4 5 6
50
0.03 0.05 0.1 0.5 1 5
IC (A)
50
0.03
0.05 0.1 0.5 1 5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=4V)
3
3
5
VCE (sat) (V)
2
1
Ta=–30°C
125°C
25°C
75°C
VCE (sat) (V)
2
1
IC=1.5A
IC=1A
IC=3A
IC (A)
4
3
2
1
Ta=125°C
75°C
25°C
–30°C
0
0.5
1 5
IC (A)
0
0.1
0.5 1 5 10 50
IB (mA)
0
0
1
VBE (V)
2 3
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
20
10
10
15
5
100µs
With Infinite Heatsink
1ms
θ j–a (°C / W)
5
PT (W)
10
IC (A)
1
0.5
10ms
1
0.5
0 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
0
–40 0 50 100 150
Ta (°C)
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
124

SMA4032
NPN Darlington
With built-in flywheel diode
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 3 A
ICP 5 (PW≤1ms, Du≤50%) A
IB 0.2 A
IF 3 (PW≤0.5ms, Du≤25%) A
IFSM 5 (PW≤10ms, Single pulse) A
VR 120 V
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
2 3 4 9 10 11
1 5 8 12
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 100 V IC=25mA
hFE 2000 6000 15000 VCE=4V, IC=1.5A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.7 2.0 V
IC=1.5A, IB=3mA
ton 0.5 µs VCC 30V,
tstg 2.2 µs IC=1.5A,
tf 0.9 µs IB1=–IB2=3mA
fT 40 MHz VCE=12V, IE=–0.5A
Cob 30 pF VCB=10V, f=1MHz
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
min
Specification
typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.6 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
R1 R2
6
R1: 3kΩ typ R2: 200Ω typ
7
Characteristic curves
IC (A)
5
4
3
2
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=10mA
2mA
1mA
0.6mA
0.4mA
0.3mA
(VCE=4V)
(VCE=4V)
20000
20000
75°C
10000
typ
10000
25°C
5000
5000
hFE
1000
500
hFE
1000
500
Ta=125°C
–30°C
1
0
0
1 2 3
VCE (V)
4 5 6
100
50
0.03 0.05 0.1 0.5 1 5
IC (A)
100
50
0.03
0.05 0.1 0.5 1 5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=4V)
3
3
5
4
75°C
VCE (sat) (V)
2
1
Ta=–30°C
125°C
25°C
75°C
VCE (sat) (V)
2
1
IC=1.5A
IC=1A
IC=3A
IC (A)
3
2
1
Ta=125°C
25°C
–30°C
0
0.5
1 5
IC (A)
0
0.1
0.5 1 5 10 50
IB (mA)
0
0
1
VBE (V)
2 3
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
20
10
5
100µs
10
15
With Infinite Heatsink
1ms
θ j–a (°C / W)
5
PT (W)
10
IC (A)
1
0.5
10ms
1
0.5
0 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
0
–40 0 50 100 150
Ta (°C)
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
125

100µs
SMA4033
NPN Darlington
With built-in flywheel diode
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 2 A
ICP 4 (PW≤1ms, Du≤50%) A
IB 0.2 A
IF 2 (PW≤0.5ms, Du≤25%) A
IFSM 4 (PW≤10ms, Single pulse) A
VR 120 V
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 100 V IC=25mA
hFE 2000 6000 15000 VCE=4V, IC=1A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.7 2.0 V
IC=1A, IB=2mA
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.8 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
2 3 4
9 10 11
1
5
8
12
R1 R2
6
7
R1: 4kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
4
10000
5000
(VCE=4V)
typ
10000
5000
(VCE=4V)
3
3mA
IB=4mA
IC (A)
2
2mA
1.2mA
0.6mA
0.4mA
0.3mA
hFE
1000
500
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
1
100
100
50
50
0
0 1
2
3 4 5 6
VCE (V)
20
0.02 0.05
0.1 0.5 1 4
IC (A)
20
0.02 0.05
0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
VCE (sat) (V)
3
2
1
0
0.2
Ta=125°C
(IC / IB=1000)
75°C
25°C
–30°C
0.5 1 4
IC (A)
VCE (sat) (V)
3
2
1
0
0.1
75°C
25°C
–30°C
0.5 1
IB (mA)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
Ta=125°C
(IC=1A)
5
IC (A)
(VCE=4V)
4
3
2
1
75°C
25°C
0
0 1
2 3
VBE (V)
Ta=125°C
–30°C
20
20
5
10
15
10ms
1ms
With Infinite Heatsink
θ j–a (°C / W)
5
PT (W)
10
IC (A)
1
0.5
1
0.5
0.2
0.5 1 5 10 50 100 500 1000
PW (mS)
5
Without Heatsink
0
–40 0 50 100 150
Ta (°C)
0.1
Single Pulse
Without Heatsink
Ta=25°C
0.05
3 5 10 50 100
VCE (V)
126

SMA5101
N-channel
General purpose
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±4 A
ID(pulse) ±8 (PW≤1ms) A
EAS* 16 mJ
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
28 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250 µA VDS=100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A
RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A
Ciss 180 pF VDS=25V, f=1.0MHz,
Coss 82 pF VGS=0V
ton 40 ns ID=4A, VDD 50V, VGS=10V,
toff 40 ns see Fig. 3 on page 16.
VSD 1.2 2.0 V ISD=4A, VGS=0V
trr 250 ns ISD=±100mA
■Equivalent circuit diagram
2
4
9
11
1
5
8
12
3
6
7
10
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
8
7
10V
8
7
TC=–40°C
25°C
(VDS=10V)
0.8
(VGS=10V)
6
7V
6
125°C
0.6
ID (A)
5
4
3
6V
ID (A)
5
4
3
RDS (ON) (Ω)
0.4
2
1
VGS=5V
2
1
0.2
0
0 10
20
VDS (V)
0
0 2 4 6 8 10
VGS (V)
0
0
1 2 3 4 5 6 7 8
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=4A
VGS=0
(VDS=10V)
5
1.2
VGS=10V
600
f=1MHz
1.0
Ciss
Re (yfs) (S)
1
0.5
25°C
125°C
TC=–40°C
RDS (ON) (Ω)
0.8
0.6
0.4
0.2
Capacitance (pF)
100
50
10
Coss
Crss
IDR (A)
0.2
0.05 0.1
0.5 1
5 8
0
–40
0 50 100 150
5
0 10 20 30 40 50
VDS (V)
TC (°C)
ID (A)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
8
7
6
5
4
3
2
1
10V
5V
VGS=0V
0 0 0.5
1.0 1.5
VSD (V)
ID (A)
10
5
1
0.5
0.1
0.5
ID (pulse) max
RDS (ON)
LIMITED
10 ms (1shot)
(TC=25°C)
1ms
100µs
1 5 10 50 100
VDS (V)
PT (W)
30
25
20
15
10
5
0
Without Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
0 50 100 150
Ta (°C)
127

SMA5102
N-channel
With built-in flywheel diode
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Uni
VDSS 100 V
VGSS ±20 V
ID ±4 A
ID(pulse) ±8 (PW≤1ms) A
EAS* 16 mJ
IF 4 (PW≤0.5ms, Du≤25%) A
IFSM 8 (PW≤10ms, Single pulse) A
VR 120 V
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
2 3 4 9 10 11
1 5 8 12
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250 µA VDS=100V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A
RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A
Ciss 180 pF VDS=25V, f=1.0MHz,
Coss 82 pF VGS=0V
ton 40 ns ID=4A, VDD 50V, VGS=10V,
toff 40 ns see Fig. 3 on page 16.
VSD 1.2 2.0 V ISD=4A, VGS=0V
trr 250 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol
min
Specification
typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
6
7
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VDS=10V)
8
8
0.8
TC=–40°C
10V
7
7
25°C
6
7V
6
125°C
0.6
ID (A)
5
4
3
6V
ID (A)
5
4
3
RDS (ON) (Ω)
0.4
2
VGS=5V
2
0.2
1
1
0
0 10
20
VDS (V)
0
0 2 4 6 8 10
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
5
(VDS=10V)
1.2
ID=4A
V GS =10V
600
0
0
1 2 3 4 5 6 7 8
ID (A)
VGS=0V
f=1MHz
1.0
Ciss
Re (yfs) (S)
1
0.5
25°C
125°C
TC=–40°C
RDS (ON) (Ω)
0.8
0.6
0.4
Capacitance (pF)
100
50
Coss
0.2
10
Crss
0.2
0.05 0.1
0.5 1
5 8
0
–40
0 50 100 150
5
0 10 20 30 40 50
ID (A)
VDS (V)
TC (°C)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
8
10
(TC=25°C)
30
IDR (A)
7
6
5
4
ID (A)
5
1
ID (pulse) max
RDS (ON)
LIMITED
10 ms (1shot)
1ms
100µs
PT (W)
25
20
15
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
128
3
2
10V
VGS=0V
1
5V
0
0 0.5
1.0 1.5
VSD (V)
0.5
0.1
0.5
1 5 10 50 100
VDS (V)
10
5
0
Without Heatsink
0 50 100 150
Ta (°C)

SMA5103
N-channel + P-channel
H-bridge
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS* 2 — mJ
4 (Ta=25°C, with all circuits operating, without heatsink) W
PT
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch
12
8
11
2
9
4
Nch
1
5
Characteristic curves
3
6
10
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch (VDS=10V)
–8
10
7V
–10V
8
–6
8
ID (A)
6
4
2
6V
ID (A)
–4
–2
VGS=–4V
–7V
–6V
–5V
ID (A)
6
4
2
TC=–40°C
25°C
125°C
VGS=4V
0
0 2 4 6 8 10
VDS (V)
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 2 4 6
8
VGS (V)
0.20
RDS(ON)-ID Characteristics (Typical)
N-ch P-ch P-ch
(VGS=10V)
(VGS=–10V)
0.6
–8
TC=–40°C
(VDS=–10V)
0.5
25°C
0.15
–6
125°C
RDS (ON) (Ω)
0.10
RDS (ON) (Ω)
0.4
0.3
0.2
ID (A)
–4
0.05
–2
0.1
0
0
2 4 6 8 10
ID (A)
0
0
–2
–4 –6 –8
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
0.3
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=5A
VGS=10V
1.0
P-ch
ID=–4A
VGS=–10V
0.8
RDS (ON) (Ω)
0.2
0.1
RDS (ON) (Ω)
0.6
0.4
0.2
0
–40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
130

SMA5103
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.2 3.3 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 35 ns ID=5A, VDD 30V, VGS=10V, 60 ns ID=–4A, VDD –30V, VGS=–10V,
toff 35 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 140 ns ISD=±100mA 150 ns ISD= 100mA
Characteristic curves
Re(yfs) (S)
10
5
1
0.5
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch (VDS=10V)
P-ch (VDS=–10V)
N-ch (TC=25°C)
5
20
TC=–40°C
25°C
125°C
Re (yfs) (S)
1
0.5
TC=–40°C
25°C
125°C
ID (A)
10
5
1
0.5
ID (pulse) max
RDS (ON)
LIMITED
1ms
10 ms (1shot)
100µs
Capacitance (pF)
0.3
0.08 0.5 1
1000
500
100
50
ID (A)
5 10
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
P-ch
f=1MHz
f=1MHz
700
–10
Ciss
Coss
Crss
Capacitance (pF)
0.3
–0.1
500
100
50
–0.5 –1
ID (A)
Ciss
Coss
Crss
–5 –8
ID (A)
0.1
0.5
–5
–1
–0.5
1 5 10 50 100
ID (pulse) max
RDS (ON)
LIMITED
VDS (V)
10 ms (1shot)
(TC=25°C)
1ms
100µs
10
0 10 20 30 40 50
VDS (V)
10
N-ch
IDR-VSD Characteristics (Typical)
10
0 –10 –20 –30 –40 –50
VDS (V)
–8
P-ch
–0.1
–0.5
30
–1 –5 –10 –50 –100
VDS (V)
PT-Ta Characteristics
8
–6
25
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
6
4
2
10V
5V
VGS=0V
IDR (A)
–4
–2
–10V
–5V
VGS=0V
PT (W)
20
15
10
5 Without Heatsink
With Infinite Heatsink
0 0 0.5
1.0 1.5
VSD (V)
0
0 –1 –2 –3 –4 –5
VSD (V)
0
0 50 100 150
Ta (°C)
131

SMA5104
N-channel + P-channel
3-phase motor drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS* 2 — mJ
4 (Ta=25°C, with all circuits operating, without heatsink) W
PT
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
1
Pch
2
8
9
3
7
10
Nch
4
6
11
Characteristic curves
5
12
10
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch (VDS=10V)
–8
10
7V
–10V
8
–6
8
ID (A)
6
4
2
6V
5V
ID (A)
–4
–2
VGS=–4V
–7V
–6V
–5V
ID (A)
6
4
2
TC=–40°C
25°C
125°C
VGS=4V
0
0 2 4 6 8 10
VDS (V)
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 2 4 6
8
VGS (V)
0.20
RDS(ON)-ID Characteristics (Typical)
N-ch P-ch P-ch
(VGS=10V)
(VGS=–10V)
0.6
–8
TC=–40°C
(VDS=–10V)
0.5
25°C
0.15
–6
125°C
RDS (ON) (Ω)
0.10
RDS (ON) (Ω)
0.4
0.3
ID (A)
–4
0.2
0.05
–2
0.1
0
0
2 4 6 8 10
ID (A)
0
0
–2
–4 –6 –8
ID (A)
0
0 –2 –4 –6 –8 –10
VGS (V)
0.3
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=5A
VGS=10V
1.0
P-ch
ID=–4A
VGS=–10V
0.8
RDS (ON) (Ω)
0.2
0.1
RDS (ON) (Ω)
0.6
0.4
0.2
0
–40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
132

SMA5104
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.2 3.3 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 35 ns ID=5A, VDD 30V, VGS=10V, 60 ns ID=–4A, VDD –30V, VGS=–10V,
toff 35 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 140 ns ISD=±100mA 150 ns ISD= 100mA
Characteristic curves
10
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch (VDS=10V)
P-ch (VDS=–10V)
N-ch (TC=25°C)
5
20
Re (yfs) (S)
5
1
0.5
TC=–40°C
25°C
125°C
Re (yfs) (S)
1
0.5
TC=–40°C
25°C
125°C
ID (A)
10
5
1
0.5
ID (pulse) max
RDS (ON)
LIMITED
1ms
10 ms (1shot)
100µs
Capacitance (pF)
0.3
0.08 0.5 1
1000
500
100
50
ID (A)
5 10
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch
VGS=0V
P-ch
f=1MHz
f=1MHz
700
–10
Ciss
Coss
Crss
Capacitance (pF)
0.3
–0.1
500
100
50
–0.5 –1
ID (A)
Ciss
–5 –8
Coss
Crss
ID (A)
0.1
0.5
–5
–1
–0.5
1 5 10 50 100
ID (pulse) max
RDS (ON)
LIMITED
VDS (V)
10 ms (1shot)
(TC=25°C)
1ms
100µs
10
0 10 20 30 40 50
VDS (V)
10
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–0.5
–1 –5 –10 –50 –100
VDS (V)
N-ch
IDR-VSD Characteristics (Typical)
P-ch
PT-Ta Characteristics
10
–8
30
8
–6
25
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
6
4
2
10V
5V
VGS=0V
IDR (A)
–4
–2
–10V
–5V
VGS=0V
PT (W)
20
15
10
5 Without Heatsink
With Infinite Heatsink
0
0 0.5
1.0 1.5
VSD (V)
0
0 –1 –2 –3 –4 –5
VSD (V)
0
0 50 100 150
Ta (°C)
133

SMA5105
N-channel
With built-in flywheel diode
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±10 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms) A
EAS* 32 mJ
IF 5 (PW≤0.5ms, Du≤25%) A
IFSM 10 (PW≤10ms, Single pulse) A
VR 120 V
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
28 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=2mH, ID=5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
2 3 4 9 10 11
1 5 8 12
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3.1 4.5 S VDS=10V, ID=5A
RDS(ON)
0.27 0.30 Ω VGS=10V, ID=2.5A
0.38 0.41 Ω VGS=4V, ID=2.5A
Ciss 470 pF VDS=25V, f=1.0MHz,
Coss 130 pF VGS=0V
ton 70 ns ID=5A, VDD 50V, VGS=5V,
toff 50 ns see Fig. 3 on page 16.
VSD 1.2 2.0 V ISD=5A, VGS=0V
trr 330 ns ISD=±100mA
●Diode for flyback voltage absorption (1 circuit)
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
6
7
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
10
10
0.4
10V
4V
8
8
0.3
VGS=4V
ID (A)
6
4
3.5V
3V
ID (A)
6
4
TC=–40°C
RDS (ON) (Ω)
0.2
VGS=10V
2
2
25°C
125°C
0.1
VGS=2.5V
0
0 2 4 6 8 10
VDS (V)
0
0 1 2 3 4
VGS (V)
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
(ID=2.5A)
f=1MHz
10
0.6
5
0
0
2000
1 2 3
4 5 6 7 8 9 10
Re (yfs) (S)
5
1
25°C
125°C
TC=–40°C
RDS (ON) (Ω)
0.5
0.4
0.3
0.2
VGS=4V
VGS=10V
Capacitance (pF)
1000
500
100
50
Ciss
Coss
0.5
0.1
Crss
IDR (A)
0.3
0.05 0.1
0.5 1
10
8
6
4
ID (A)
5 10
0
–40
0 50 100 150
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
10V
ID (A)
20
10
5
1
0.5
ID (pulse) max
RDS (ON)
LIMITED
TC (°C)
10 ms (1shot)
(TC=25°C)
1ms
100µs
PT (W)
10
0 10 20 30 40 50
30
25
20
15
10
VDS (V)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
2
4V
5
Without Heatsink
134
VGS=0V
0
0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
VDS (V)
0
0 50 100 150
Ta (°C)

SMA5106
N-channel
With built-in flywheel diode
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±10 V
ID ±4 A
ID(pulse) ±8 (PW≤1ms) A
EAS* 16 mJ
IF 4 (PW≤0.5ms, Du≤25%) A
IFSM 8 (PW≤10ms, Single pulse) A
VR 120 V
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
2 3 4 9 10 11
1 5 8 12
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A
RDS(ON)
0.47 0.55 Ω VGS=10V, ID=2A
0.60 0.78 Ω VGS=4V, ID=2A
Ciss 230 pF VDS=25V, f=1.0MHz,
Coss 60 pF VGS=0V
ton 60 ns ID=4A, VDD 50V, VGS=10V,
toff 50 ns see Fig. 3 on page 16.
VSD 1.2 2.0 V ISD=4A, VGS=0V
trr 250 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
Characteristic curves
6
7
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
8
8
0.8
10V
7
7
6
4.5V
6
0.6
VGS=4V
ID (A)
5
4
3
4V
3.5V
ID (A)
5
4
3
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.4
VGS=10V
2
VGS=3V
2
0.2
1
1
0
0 2 4 6 8 10
VDS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V)
(ID=2A)
f=1MHz
7
5
0
0 2 4 6 8
1.2
1.0
VGS (V)
700
500
0
0
1 2 3
4 5 6 7 8
ID (A)
Ciss
Re (yfs) (S)
1
TC=–40°C
25°C
RDS (ON) (Ω)
0.8
0.6
0.4
VGS=4V
VGS=10V
Capacitance (pF)
100
50
Coss
0.5
125°C
0.2
10
Crss
IDR (A)
0.3
0.05 0.1
0.5 1
8
7
6
5
4
3
2
ID (A)
5 8
0
–40
0 50 100 150
TC (°C)
5
0 10 20 30 40 50
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
10V
1 4V
VGS=0V
ID (A)
10
5
1
0.5
ID (pulse) max
RDS (ON)
LIMITED
10 ms (1shot)
(TC=25°C)
1ms
100µs
PT (W)
30
25
20
15
10
5
Without Heatsink
VDS (V)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
0
0 0.5
1.0 1.5
VSD (V)
0.1
0.5
1 5 10 50 100
VDS (V)
0
0 50 100 150
Ta (°C)
135

SMA5112
N-channel
3-phase DC motor 100V AC direct drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 250 V
VGSS ±20 V
ID ±7 A
ID(pulse) ±15 (PW≤1ms, Du≤1%) A
EAS* 55 mJ
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 250 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=250V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A
RDS(ON) 0.4 0.5 Ω VGS=10V, ID=3.5A
Ciss 450 pF VDS=10V, f=1.0MHz,
Coss 280 pF VGS=0V
td(on) 20 ns ID=3.5A,
tr 30 ns VDD 100V,
td(off) 55 ns RL=28.6Ω, VGS=10V,
tf 75 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V
trr 600 ns ISD=±100mA
1
2
8
4
9
6
11
3
7
10
5
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
7
(VDS=10V)
(VGS=10V)
6V
7
0.5
6
5
10V
5.5V
6
5
0.4
ID (A)
4
3
5V
ID (A)
4
3
RDS (ON) (Ω)
0.3
0.2
2
1
4.5V
VGS=4V
0
0 2 4 6 8
VDS (V)
10
2
1
125°C
25°C
0
0 2 4 6
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
10
(VDS=10V)
1.0
TC=–40°C
8
ID=3.5A
VGS=10V
0.1
2000
1000
0
0 1 2 3 4 5
ID (A)
6
VGS=0V
f=1MHz
7
Re (yfs) (S)
5
1
TC=–40°C
25°C
125°C
RDS (ON) (Ω)
0.8
0.6
0.4
Capacitance (pF)
500
100
50
Ciss
Coss
0.5
0.2
10
5
Crss
0.3
0.05 0.1
0.5 1
ID (A)
5 7
0
–40
0
50
TC (°C)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
7
6
5
20
10
5
ID (pulse) max
1ms
100µs
100
(TC=25°C)
150
2
0 10 20 30
VDS (V)
40
35
30
40 50
With Silicone Grease
Natural Cooling
All Circuits Operating
10ms (1shot)
IDR (A)
4
3
ID (A)
1
0.5
RDS (ON) LIMITED
PT (W)
25
20
15
With Infinite Heatsink
2
1
5.10V
VGS=0V
0.1
10
5 Without Heatsink
0
0 0.5 1.0 1.5
VSD (V)
0.05
3 5 10
50 100
500
VDS (V)
0
0 50 100 150
Ta (°C)
136

SMA5114
N-channel
With built-in flywheel diode
External dimensions B • • • SMA
Absolute maximum ratings
Characteristic curves
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID ±3 A
ID(pulse) ±6 (PW≤1ms, Du≤1%) A
EAS* 6.8 mJ
IAS 3 A
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, IL=3A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
2 3 4 9 10 11
1 5 8 12
6
7
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V
IGSS ±10 µA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V
VTH 1.0 2.5 V VDS=10V, ID=250µA
Re(yfs) 1.0 2.3 S VDS=10V, ID=1.0A
RDS(ON)
0.20 0.25 Ω VGS=10V, ID=1.0A
0.25 0.30 Ω VGS=4V, ID=1.0A
Ciss 170 pF VDS=10V,
Coss 130 pF f=1.0MHz,
Crss 20 pF VGS=0V
td(on) 80 ns ID=1A,
tr 170 ns VDD 30V,
td(off) 330 ns RL=30Ω, VGS=5V,
tf 150 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=3A, VGS=0V
trr 80 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
3
10V
3
(VDS=10V)
0.5
3.4V
0.4
ID (A)
2
1
3.2V
3V
VGS=2.8V
ID (A)
2
1
25°C
125°C
TC=–40°C
RDS (ON) (Ω)
0.3
0.2
0.1
VGS=4V
10V
0
0 2 4 6 8
VDS (V)
10
0
0 1 2
3
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
10
(VDS=10V)
0.5
4 5
(ID=1A)
500
0
0 1
ID (A)
2 3
VGS=0V
f=1MHz
Re (yfs) (S)
5
1
TC=–40°C
25°C
RDS (ON) (Ω)
0.4
0.3
0.2
VGS=4V
10V
Capacitance (pF)
100
50
10
Ciss
Coss
0.5
125°C
0.1
5
Crss
0.2
0.05 0.1 0.5
1
3
0
–40 0
ID (A)
TC (°C)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
50
100 150
1
0 10 20 30
VDS (V)
40 50
3
10
5
ID (pulse) max
(TC=25°C)
1ms
100µs
30
25
With Silicone Grease
Natural Cooling
All Circuits Operating
2
RDS (ON) LIMITED
10ms (1shot)
20
IDR (A)
VGS=0V
ID (A)
1
0.5
PT (W)
15
With Infinite Heatsink
1
5V
10
0.1
5
Without Heatsink
0
0 0.5 1.0 1.5
VSD (V)
0.05
0.5 1
5 10
50 100
VDS (V)
0
0 50 100 150
Ta (°C)
137

SMA5117
N-channel
3-phase DC motor 100V AC direct drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 250 V
VGSS ±20 V
ID ±7 A
ID(pulse) ±15 (PW≤1ms, Du≤1%) A
EAS* 120 mJ
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=4.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
1
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 250 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=250V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 4.5 6.5 S VDS=10V, ID=3.5A
RDS(ON) 0.2 0.25 Ω VGS=10V, ID=3.5A
Ciss 850 pF VDS=10V,
Coss 550 pF f=1.0MHz,
Crss 250 pF VGS=0V
td(on) 20 ns ID=3.5A,
tr 25 ns VDD 100V,
td(off) 90 ns RL=28.6Ω, VGS=10V,
tf 70 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=7A, VGS=0V
trr 85 ns ISD=3.5A, VGS=0V, di/dt=100A/µs
2
8
4
9
6
11
3
7
10
5
12
Characteristic curves
ID (A)
7
6
5
4
3
2
1a
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
10V
6V
5.5V
0
0 2 4
5V
4.5V
VGS=4V
6
VDS (V)
8 10
ID (A)
7
6
5
4
3
2
1
125°C
25°C
0
0 2 4
VGS (V)
(VDS=10V)
6 8
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
20
(VDS=10V)
0.5
TC=–40°C
ID=3.5A
VGS=10V
RDS (ON) (Ω)
0.3
0.25
0.2
0.15
0.1
0.05
3000
0
0
1 2 3 4
ID (A)
(VGS=10V)
5 6 7
VGS=0V
f=1MHz
10
0.4
1000
Ciss
Re (yfs) (S)
5
1
25°C
125°C
Tc=–40°C
RDS (ON) (Ω)
0.3
0.2
0.1
Capacitance (pF)
500
100
50
Coss
Crss
0.5
0.3
0.05 0.1
0.5
ID (A)
1 5 7
0
–40 0
50 100 150
TC (°C)
10
0 10 20 30
VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
40 50
7
6
5
(VGS=0V)
30
10
5
ID (pulse) max
10ms (1shot)
1ms
(TC=25°C)
100µs
40
35
30
With Silicone Grease
Natural Cooling
All Circuits Operating
IDR (A)
4
3
ID (A)
1
0.5
RDS (ON) LIMITED
PT (W)
25
20
15
With Infinite Heatsink
2
0.1
0.05
10
1
5 Without Heatsink
0
0 0.5 1.0 1.5
VSD (V)
0.01
0.5 1 5 10 50 100
VDS (V)
500
0
0 50 100 150
Ta (°C)
138

SMA5118
N-channel
3-phase DC motor 200V AC direct drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 500 V
VGSS ±30 V
ID ±5 A
ID(pulse) ±10 (PW≤1ms, Du≤1%) A
EAS* 45 mJ
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=30V, L=3.4mH, ID=5A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
1
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 500 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±30V
IDSS 100 µA VDS=500V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 2.4 4.0 S VDS=10V, ID=2.5A
RDS(ON) 1.05 1.4 Ω VGS=10V, ID=2.5A
Ciss 770 pF VDS=10V,
Coss 290 pF f=1.0MHz, VGS=0V
td(on) 20 ns ID=2.5A,
tr 25 ns VDD 200V,
td(off) 70 ns RL=80Ω, VGS=10V,
tf 65 ns see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V
trr 75 ns ISD=2.5A, di/dt=100A/µs
2
8
4
9
6
11
3
7
10
5
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=20V)
(VGS=10V)
5
5
2.0
5V
4
10V
4
1.5
ID (A)
3
2
4.5V
ID (A)
3
2
TC=125°C
RDS (ON) (Ω)
1.0
1
4V
1
25°C
–40°C
0.5
VGS=3.5V
0
0 5 10 15 20
VDS (V)
0
0 2 4
VGS (V)
6
0
0 1 2 3 4
ID (A)
5
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
ID=2.5A
VGS=0V
10
(VDS=20V)
VGS=10V
3.0
2000
f=1MHz
Re (yfs) (S)
5
1
0.5
Ta=–40°C
25°C
125°C
RDS (ON) (Ω)
2.5
2.0
1.5
1.0
Capacitance (pF)
1000
500
100
50
Ciss
Coss
0.5
Crss
0.2
0.05 0.1 0.5 1
ID (A)
5
0
–40 0
50 100 150
TC (°C)
10
0 10 20 30 40 50
VDS (V)
IDR (A)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
(Ta=25°C)
5
4
3
2
ID (A)
20
10
5
1
0.5
RDS (ON) LIMITED
(TC=25°C)
40
ID (pulse) max
With Silicon Grease
35
Natural Cooling
All Circuits Operating
30
1ms
100µs
PT (W)
25
20
15
With Infinite Heatsink
1
0
0 0.5 1.0 1.5
VSD (V)
0.1
0.05
3 5 10 50 100 600
VDS (V)
10
5 Without Heatsink
0
0 50 100 150
Ta (°C)
139

SMA5125
N-channel + P-channel
3-phase motor drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
N channel
Ratings
P channel
Unit
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 10 –10 A
ID(pulse) 15 (PW≤1ms, duty≤25%) –15 (PW≤1ms, duty≤25%) A
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
30 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 31.25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 4.166 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
1
Pch
2
8
9
3
7
10
Nch
4
6
11
Characteristic curves
5
12
15
14
12
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch (Ta=25°C)
P-ch (Ta=25°C)
–15
15
4.0V
N-ch
–14
14
–10V
–4.0V
–12
12
(VDS=10V)
ID (A)
10
8
6
3.5V
3.3V
ID (A)
–10
–8
–6
–3.5V
–3.3V
ID (A)
10
8
6
4
3.0V
–4
–3.0V
4
2
0.20
VGS=2.7V
0
0 2 4 6 8 10
VDS (V)
–2
VGS=–2.7V
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 1 2 3 4 5
VGS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch Ta=25°C
P-ch
Ta=25°C
VGS=4V
VGS=–10V
0.20
–15
P-ch
2
–14
Tc=125°C 25°C
–40°C
(VDS=–10V)
0.16
0.16
–12
RDS (ON) (Ω)
0.12
0.08
RDS (ON) (Ω)
0.12
0.08
ID (A)
–10
–8
–6
Tc=40°C
0.04
0.04
–4
–2
25°C
–40°C
0
0.20
0 2 4 6 8 10 12 14 15
ID (A)
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=5A
VGS=4V
0.20
0
0 –2 –4 –6 –8 –10 –12 –14–15
ID (A)
P-ch
ID=–5A
VGS=–10V
0
0 –1 –2 –3 –4 –5
VGS (V)
0.16
0.16
RDS (ON) (Ω)
0.12
0.08
RDS (ON) (Ω)
0.12
0.08
0.04
0.04
0
–40
0 50 100 150
TC (°C)
0
–40
0 50 100 150
TC (°C)
140

SMA5125
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V –60 V ID=–100µA, VGS=0V
IGSS ±10 µA VGS=±20V ±10 µA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V –100 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –1.0 –2.0 V VDS=–10V, ID=–250µA
Re(yfs) 8.0 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A
RDS(ON) 0.14 Ω VGS=4V, ID=5A 0.14 Ω VGS=–10V, ID=–5A
Ciss 460 pF VDS=10V, 1200 pF VDS=–10V,
Coss 225 pF f=1.0MHz, 440 pF f=1.0MHz,
Crss 50 pF VGS=0V 120 pF VGS=0V
td (on) 25 ns ID=5A, VDD 20V, 50 ns ID=–5A, VDD –20V,
tr 110 ns RL=4Ω, VGS=5V, 170 ns RL=4Ω, VGS=–5V,
td (off) 90 ns RG=50Ω, 180 ns RG=50Ω,
tf 55 ns see Fig.3 on page 16. 100 ns see Fig.4 on page 16.
VSD 1.15 ns ISD=10A, VGS=0V –1.25 V ISD=–10A, VGS=0V
trr 75 V ISD=5A, di/dt=100A/µs 100 ns ISD=–5A, di/dt=100A/µs
Characteristic curves
20
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch (VDS=10V)
P-ch (VDS=–10V)
N-ch
20
20
100µs
10
10
10
Re (yfs) (S)
1
Tc=40°C
25°C
Re (yfs) (S)
1
Tc=–40°C
25°C
ID (A)
1
RDS (ON) LIMITED
10ms
1ms
125°C
125°C
0.1
0.05 0.1
1 10
ID (A)
20
0.1
–0.05 –0.1 –1 –10 –20
ID (A)
Single Pulse
Tc=25°C
0.1
0.1
1
VDS (V)
10
100
5000
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch VGS=0V
P-ch
(Ta=25°C) f=1MHz
(Ta=25°C) f=1MHz
5000
–20
100µs
–10
1ms
Capacitance (pF)
1000
100
Ciss
Coss
Capacitance (pF)
1000
100
Ciss
Coss
Crss
ID (A)
–1
RDS (ON) LIMITED
10ms
Crss
IDR (A)
10
0 10 20 30 40 50
VDS (V)
15
14
12
10
8
6
N-ch
4V
VGS=10V
0V
IDR-VSD Characteristics (Typical)
(Ta=25°C)
IDR (A)
10
0 –10 –20 –30 –40 –50
VDS (V)
–15
–14
–12
–10
–8
–6
VGS=–10V
P-ch
–4V
0V
(Ta=25°C)
Single Pulse
Tc=25°C
–0.1
–0.1
–1
–10
–100
VDS (V)
PT (W)
40
35
30
25
20
15
PT-Ta Characteristics
All Circuits Operating
With Infinite Heatsink
4
–4
10
2
–2
5
Without Heatsink
0
0.0 0.5 1.0 1.5
VSD (V)
0
0.0 –0.5 –1.0 –1.5
VSD (V)
0
0 50 100 150
Ta (°C)
141

SMA5127
N-channel + P-channel
3-phase motor drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
N channel
P channel
Unit
VDSS 60 –60 V
VGSS ±20 20 V
ID 4 –4 A
ID(pulse) 8 (PW≤1ms, Duty≤1%) –8 (PW≤1ms, Duty≤1%) A
PT
4 (Ta=25°C, with all circuits operating, without heatsink) W
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j-a 31.25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j-c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
1
Pch
2
8
9
3
7
10
Nch
4
6
11
Characteristic curves
5
12
ID (A)
8
6
4
10V
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
(Ta=25°C)
(Ta=25°C)
(VDS=10V)
–8
8
4.5V
4.0V
3.5V
ID (A)
–6
–4
–10V
–4.5V
–4.0V
–3.6V
ID (A)
Ta=–40°C
7
25°C
125°C
6
5
4
3
2
VGS=3.0V
–2
–3.2V
2
VGS=–2.7V
1
0
0 2 4 6 8 10
VDS (V)
0
0 –2 –4 –6 –8 –10
VDS (V)
0
0 1 2 3 4 5 6 7
VGS (V)
RDS (ON) (Ω)
0.6
0.5
0.4
0.3
0.2
0.1
VGS=4V
RDS(ON)-ID Characteristics (Typical)
N-ch P-ch P-ch
(Ta=25°C)
(Ta=25°C)
0.6
–8
10V
RDS (ON) (Ω)
VGS=–4V
0.5
0.4
–10V
0.3
0.2
0.1
ID (A)
Tc=–40°C
–6
25°C
–4
–2
(VDS=–10V)
125°C
0
0 1 2 3 4 5 6 7 8
ID (A)
0
0
–2
–4 –6 –8
ID (A)
0
0 –1 –2 –3 –4 –5 –6 –7
VGS (V)
0.8
N-ch
RDS(ON)-TC Characteristics (Typical)
ID=2A
VGS=4V
0.8
P-ch
ID=–2A
VGS=–10V
0.7
0.7
RDS (ON) (Ω)
0.6
0.5
0.4
RDS (ON) (Ω)
0.6
0.5
0.4
0.3
0.3
0.2
–40
–25 0 25 50 75 100 125 150
Ta (°C)
0.2
–40
–25 0 25 50 75 100 125 150
Ta (°C)
142

SMA5127
Electrical characteristics
(Ta=25°C)
N channel
P channel
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V –60 V ID=–100µA, VGS=0V
IGSS ±10 µA VGS=±20V 10 µA VGS= 20V
IDSS 100 µA VDS=60V, VGS=0V –100 µA VDS=–60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA –1.0 –2.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.5 S VDS=10V, ID=2A 3 S VDS=–10V, ID=–2A
RDS(ON) 0.55 Ω VGS=4V, ID=2A 0.55 Ω VGS=–10V, ID=–2A
Ciss 150 pF VDS=10V 320 pF VDS=–10V,
Coss 70 pF f=1.0MHz 130 pF f=1.0MHz,
Crss 15 pF VGS=0V 40 pF VGS=0V
td (on) 12 ns
ID=2A, VDD 20V,
20 ns
ID=–2A, VDD –20V,
tr 40 ns
RL=10Ω, VGS=5V,
95 ns
RL=10Ω, VGS=–5V,
td (off) 40 ns
see Fig.3 on page 16.
70 ns
see Fig.4 on page 16.
tf 25 ns
60 ns
VSD 1.2 V ISD=4A, VGS=0V –1.1 V ISD=–4A, VGS=0V
trr 75 ns
ISD=2A, VGS=0V,
75 ns
ISD=–2A, VGS=0V,
di/dt=100A/µs
di/dt=100A/µs
Characteristic curves
5
Tc=–40°C
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
N-ch (VDS=10V)
P-ch N-ch
(VDS=–10V)
5
10
Ta=–40°C
(Tc=25°C)
100µs
25°C
1ms
Re (yfs) (S)
1
125°C
25°C
Re (yfs) (S)
1
125°C
ID (A)
1
RDS (on) LIMITED
10ms
0.1
0.01
0.1
1 8
ID (A)
0.1
–0.05 –0.1 –1
ID (A)
–8
0.1
1
10 100
VDS (V)
1000
NPN
Capacitance-VDS Characteristics (Typical)
N-ch VGS=0V
P-ch P-ch
PNP
VGS=80V
(Ta=25°C) f=1MHz
(Ta=25°C) f=1MHz
1000
–10
(Tc=25°C)
100µs
Ciss
1ms
Capacitance (pF)
100
Ciss
Coss
Capacitance (pF)
100
Coss
Crss
ID (A)
–1
RDS (ON) LIMITED
10ms
10
Crss
10
5
0 10 20 30 40 50
VDS (V)
5
0 –10 –20 –30 –40 –50
VDS (V)
–0.1
–1
–10 –100
VDS (V)
5
N-ch
VDS-VGS IDR-VSD Characteristics (Typical)
(Ta=25°C)
–5
P-ch
(Ta=25°C)
30
PT-Ta Characteristics
4
–4
25
With Silicon Grease
Natural Cooling
All Circuits Operating
VDS (V)
3
2
ID=4A
VDS (V)
–3
–2
PT (W)
20
15
10
With Infinite Heatsink
1
2A
–1
5 Without Heatsink
0
2 10 20
VGS (V)
0
–2
VGS (V)
–10
–20
0
0 50 100 150
Ta (°C)
143

SMA6010
PNP + NPN Darlington
3-phase motor drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
ICP 6 (PW≤1ms, Du≤50%) –6 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 6.25 °C/W
■Equivalent circuit diagram
1
R3
R4
2 8 9
3
7
10
4
6
11
R1
R2
5 12
R1: 3kΩ typ R2: 200Ω typ R3: 2kΩ typ R4: 150Ω typ
Characteristic curves
6
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
–6
6
IB=4.0mA
2.0mA
IB=–2.2mA
–1.8mA
–1.5mA
(VCE=4V)
1.2mA
–1.2mA
5
IC (A)
4
0.8mA
0.6mA
0.5mA
IC (A)
–4
–1.0mA
–0.9mA
–0.8mA
IC (A)
4
3
75°C
2
0.4mA
–2
2
1
Ta=125°C
–30°C
25°C
0
0 2 4 6
VCE (V)
0
0 –2 –4 –6
VCE (V)
0
0
1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN (VCE=4V)
PNP (VCE=–4V)
PNP
20000
–6
(VCE=–4V)
10000
5000
typ
10000
5000
typ
–5
–4
hFE
1000
500
100
hFE
1000
500
100
IC (A)
–3
–2
–1
Ta=125°C
–30°C
75°C
25°C
50
0.03
0.05 0.1 0.5 1 5 6
IC (A)
50
–0.03
–0.05 –0.1 –0.5 –1 –5 –6
IC (A)
0
0
–1 –2 –3
VBE (V)
20000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
20000
PNP
(VCE=–4V)
10000
10000
5000
5000
hFE
1000
500
Ta=125°C
–30°C
75°C
25°C
hFE
1000
500
Ta=125°C
–30°C
75°C
100
100
25°C
50
0.03
0.05 0.1 0.5 1 5 6
IC (A)
50
–0.03
–0.05 –0.1 –0.5 –1 –5 –6
IC (A)
144

1ms
1ms
SMA6010
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–20mA
hFE 2000 5000 12000 VCE=4V, IC=3A 2000 5000 12000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V –1.5 V
IC=3A, IB=6mA
VBE(sat) 2.0 V –2.0 V
IC=–3A, IB=–6mA
VFEC 1.8 V IFEC=1A –1.8 V IFEC=–1A
ton 1.0 µs VCC 30V, 0.4 µs VCC –30V,
tstg 4.0 µs IC=3A, 0.8 µs IC=–3A,
tf 1.5 µs IB1=–IB2=10mA 0.6 µs IB1=–IB2=–10mA
fT 75 MHz VCE=12V, IE=–0.1A 200 MHz VCE=–12V, IE=0.2A
Cob 50 pF VCB=10V, f=1MHz 75 pF VCB=–10V, f=1MHz
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
2
1
IC=2A
IC=1A
IC=4A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–2A
IC=–4A
θ j–a (°C / W)
5
1
0
0.2
0.5 1 5 10 50 100 200
IB (mA)
0
–0.3 –0.5 –1 –5 –10 –50 –100 –200
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
3
VCE(sat)-IC Temperature Characteristics (Typical)
NPN (IC / IB=1000)
PNP
–3
(IC / IB=1000)
20
PT-Ta Characteristics
25°C
75°C
15
VCE (sat) (V)
2
1
Ta=125°C
–30°C
VCE (sat) (V)
–2
–1
Ta=–30°C
25°C
75°C
PT (W)
10
5
Without Heatsink
With Infinite Heatsink
125°C
0
0.5
1 5 6
IC (A)
0
–0.5
–1 –5 –6
IC (A)
0
–40 0 50 100 150
Ta (°C)
10
NPN
Safe Operating Area (SOA)
–10
PNP
5
–5
10ms
10ms
IC (A)
1
0.5
IC (A)
–1
–0.5
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
–0.1
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100
VCE (V)
145

SMA6014
PNP + NPN Darlington
3-phase motor drive
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 2 –2 A
ICP 3 (PW≤1ms, Du≤50%) –3 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 6.25 °C/W
■Equivalent circuit diagram
R1 R2
1
2
4
8
9
3 7
6
11
10
R3
R1: 4kΩ typ R2: 100Ω typ R3: 3kΩ typ
Characteristic curves
5 12
IC (A)
6
4
2
IB=4.0mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN (VCE=4V)
–4
3
2.0mA
1.0mA
0.6mA
0.4mA
0.3mA
IC (A)
–3
–2
–1
IB=–10.0mA
–5.0mA
–2.0mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
IC (A)
2
1
Ta=125°C
75°C
25°C
–30°C
0
0 2 4 6
VCE (V)
0
0
–1 –2 –3
VCE (V)
–4 –5 –6
0
0 1 2
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN (VCE=4V)
PNP (VCE=–4V)
5000
–3
PNP
(VCE=–4V)
10000
5000
typ
typ
1000
–2
hFE
1000
hFE
500
IC (A)
500
100
–1
75°C
Ta=125°C
25°C
–30°C
100
0.03 0.05 0.1 0.5 1 3
IC (A)
50
–0.02 –0.05 –0.1 –0.5 –1 –3
IC (A)
0 0 –1 –2 –3
VBE (V)
20000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10000
PNP
(VCE=–4V)
hFE
10000
5000
1000
Ta=125°C
75°C
25°C
–30°C
hFE
5000
1000
500
Ta=125°C
–30°C
75°C
25°C
500
100
100
0.03 0.05 0.1 0.5 1 3
IC (A)
50
–0.02 –0.05 –0.1 –0.5 –1 –3
IC (A)
146

1ms
1ms
SMA6014
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –5 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 1500 4000 10000 VCE=4V, IC=1A 2000 4000 10000 VCE=–4V, IC=–1A
VCE(sat) 1.5 V –1.5 V
IC=1A, IB=2mA
VBE(sat) 2.2 V –2.2 V
IC=–1A, IB=–2mA
VFEC — V –1.8 V IFEC=–1A
trr — µs 3.0 µs IFEC=±100mA
ton 0.7 µs VCC 30V, 0.4 µs VCC –30V,
tstg 5.0 µs IC=1A, 1.0 µs IC=–1A,
tf 3.0 µs IB1=–IB2=2mA 0.4 µs IB1=–IB2=–2mA
fT 20 MHz VCE=12V, IE=–1A 100 MHz VCE=–12V, IE=0.1A
Cob 45 pF VCB=10V, f=1MHz 30 pF VCB=–10V, f=1MHz
Characteristic curves
2
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
(IC=–1A)
20
θ j-a-PW Characteristics
NPN
10
VCE (sat) (V)
1
IC=1A
IC=2A
VCE (sat) (V)
–2
–1
Ta=125°C
75°C
25°C
–30°C
θ j–a (°C / W)
5
1
0
0.1 0.5 1 5 10
IB (mA)
0
–0.1 –0.5 –1 –3
IB (mA)
0.5
1 5 10 50 100 500 1000
PW (mS)
2
VCE(sat)-IC Temperature Characteristics (Typical)
NPN (IC / IB=1000)
PNP
–3
(IC / IB=1000)
20
PNP
10
VCE (sat) (V)
1
Ta=125°C
–30°C
25°C
75°C
VCE (sat) (V)
–2
–1
75°C
25°C
–30°C
Ta=125°C
θ j–a (°C / W)
5
1
0
0.5 1 3
IC (A)
0
–0.2 –0.5 –1 –3
IC (A)
0.5
0.2
0.5 1 5 10 50 100 500 1000
PW (mS)
5
NPN
Safe Operating Area (SOA)
–5
PNP
20
PT-Ta Characteristics
100µs
10ms
1
100µs
–1
10ms
15
IC (A)
0.5
IC (A)
–0.5
PT (W)
10
With Infinite Heatsink
0.1
–0.1
5
Without Heatsink
Single Pulse
0.05
Without Heatsink
Ta=25°C
0.03 3 5 10 50 100
VCE (V)
Single Pulse
–0.05
Without Heatsink
Ta=25°C
–0.03 –3 –5 –10 –50 –100
VCE (V)
0
–40 0 50 100 150
Ta (°C)
147

SMA6511
PNP + NPN Darlington
Stepper motor driver with
dual supply voltage switch
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 100±15 –60 V
VCEO 100±15 –60 V
VEBO 6 –6 V
ICP 1.5 –3 A
IB 0.5 –0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
12
R3
R4
10
1
2
3
4
11
6
7
8
9
5
R1
R2
R1: 4kΩ typ R2: 150Ω typ R3: 4kΩ typ R4: 100Ω typ
Characteristic curves
3
5mA
2mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
–3
3
1mA
0.5mA
IB=–10.0mA
–5.0mA
–2.0mA
–1.2mA
–1.0mA
(VCE=4V)
2
0.3mA
–2
–0.8mA
2
IC (A)
1
0.2mA
IC (A)
–1
–0.6mA
–0.5mA
–0.4mA
IC (A)
1
–0.3mA
Ta=125°C
75°C
25°C
–30°C
0 1 2 3 4 5 6
VCE (V)
0
0
–1 –2 –3 –4 –5 –6
VCE (V)
0
0 1 2 3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN (VCE=4V)
PNP (VCE=–4V)
PNP
5000
–3
(VCE=–4V)
10000
5000
typ
typ
1000
–2
hFE
1000
500
hFE
500
IC (A)
75°C
100
100
–1
Ta=125°C
25°C
–30°C
50
0.03
0.05
0.1 0.5 1 3
IC (A)
50
–0.02 –0.05 –0.1 –0.5 –1 –3
IC (A)
0
0
–1 –2
VBE (V)
–3
20000
10000
5000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10000
5000
PNP
75°C
25°C
(VCE=–4V)
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
hFE
1000
500
Ta=125°C
–30°C
100
100
50
0.03
0.05
0.1 0.5 1 3
IC (A)
50
–0.02 –0.05 –0.1 –0.5 –1 –3
IC (A)
148

50µs
100µs
75°C
25°C
–30°C
SMA6511
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=85V –10 µA VCB=–60V
IEBO 5 mA VEB=6V –10 mA VEB=–6V
VCEO 85 100 115 V IC=10mA –60 V IC=–10mA
hFE 2000 VCE=4V, IC=1A 2000 VCE=–4V, IC=–1A
VCE(sat) 1.5 V IC=1A, IB=2mA –1.5 V IC=–1A, IB=–2mA
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
(IC=–1A)
20
θ j-a-PW Characteristics
NPN
10
VCE (sat) (V)
2
1
IC=2A
IC=1A
VCE (sat) (V)
–2
–1
Ta=125°C
θ j–a (°C / W)
5
0
0.1
0.5 1 5 10 50 100
IB (mA)
0
–0.1
–0.5 –1
IB (mA)
–5
1
1
5 10
50 100 500 1000
PW (mS)
3
VCE(sat)-IC Temperature Characteristics (Typical)
NPN (IC / IB=1000)
PNP
–3
(IC / IB=1000)
20
PNP
10
VCE (sat) (V)
2
1
Ta=–30°C
25°C
75°C
VCE (sat) (V)
–2
–1
75°C
25°C
Ta=–30°C
θ j–a (°C / W)
5
125°C
125°C
1
0
0.3
0.5 1 3
IC (A)
0
–0.2
–0.5 –1 –3
IC (A)
0.5
0.2
0.5 1 5 10 50 100 5001000
PW (mS)
1.5
NPN
Safe Operating Area (SOA)
–5
PNP
20
PT-Ta Characteristics
1
–3
100µs
1ms
10ms
0.5
1ms
15
10ms
With Infinite Heatsink
IC (A)
IC (A)
–1
–0.5
PT (W)
10
0.1
5
Without Heatsink
0.05
Single Pulse
Without Heatsink
Ta=25°C
0.03
3 5 10
VCE (V)
50 100 200
Single Pulse
Without Heatsink
Ta=25°C
–0.1
–3 –5 –10 –50 –100
VCE (V)
0
–40 0 50 100 150
Ta (°C)
149

hFE
SMA6512
PNP + NPN Darlington
Stepper motor driver with
dual supply voltage switch
External dimensions B • • • SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60±10 –60 V
VCEO 60±10 –60 V
VEBO 6 –6 V
ICP 1.5 –3 A
IB 0.5 –0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
12
R3
R4
10
1
2
3
4
11
6
7
8
9
5
R1
R2
R1: 3.5kΩ typ R2: 200Ω typ R3: 4kΩ typ R4: 100Ω typ
Characteristic curves
IC (A)
3
2
1
IB=10.0mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
3
–3
5.0mA
2.0mA
1.0mA
0.6mA
0.4mA
0.3mA
IC (A)
–2
–1
IB=–10.0mA
–5.0mA
–2.0mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.5mA
–0.4mA
IC (A)
2
Ta=125°C
75°C
1
25°C
(VCE=4V)
–0.3mA
–30°C
0
0
1 2 3
VCE (V)
4 5 6
0
0
–1 –2 –3 –4 –5 –6
VCE (V)
0
0
1 2
3
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN (VCE=4V)
PNP (VCE=–4V)
5000
–3
PNP
(VCE=–4V)
10000
5000
typ
typ
1000
–2
hFE
1000
500
hFE
500
IC (A)
75°C
100
50
30
0.02
0.05 0.1
0.5 1 3
IC (A)
100
50
–0.02 –0.05 –0.1 –0.5 –1 –3
IC (A)
–1
0
0
Ta=125°C
25°C
–30°C
–1 –2
VBE (V)
–3
20000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10000
PNP
(VCE=–4V)
10000
5000
5000
25°C
75°C
1000
500
Ta=125°C
75°C
25°C
–30°C
hFE
1000
500
Ta=125°C
–30°C
100
50
30
0.02 0.05 0.1 0.5 1 3
IC (A)
100
50
–0.02 –0.05 –0.1 –0.5 –1 –3
IC (A)
150

SMA6512
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=50V –10 µA VCB=–60V
IEBO 5 mA VEB=6V –5 mA VEB=–6V
VCEO 50 60 70 V IC=10mA –60 V IC=–10mA
hFE 2000 VCE=4V, IC=1A 2000 VCE=–4V, IC=–1A
VCE(sat) 1.5 V IC=1A, IB=2mA –1.5 V IC=–1A, IB=–2mA
Characteristic curves
3
VCE(sat)-IB Temperature Characteristics (Typical)
NPN (IC=1A)
PNP
–3
(IC=–1A)
30
θ j-a-PW Characteristics
NPN
–30°C
VCE (sat) (V)
2
1
Ta=125°C
75°C
25°C
VCE (sat) (V)
–2
–1
Ta=125°C
75°C
25°C
–30°C
θ j–a (°C / W)
10
5
1
0
0.1
0.5 1
IB (mA)
5
0
–0.1
–0.5 –1
IB (mA)
–5
0.5
0.2
0.5 1 5 10 50 100 500 1000
PW (mS)
3
NPN
VCE(sat)-IC Temperature Characteristics (Typical)
(IC / IB=1000)
PNP
–3
(IC / IB=1000)
20
PNP
Ta=125°C
75°C
25°C
–30°C
10
VCE (sat) (V)
2
1
VCE (sat) (V)
–2
–1
75°C
25°C
Ta=–30°C
θ j–a (°C / W)
5
125°C
1
0
0.2 0.5 1
IC (A)
3
0
–0.2
–0.5 –1 –3
IC (A)
0.5
0.2
0.5 1 5 10 50 100 5001000
PW (mS)
1.5
NPN
Safe Operating Area (SOA)
–5
PNP
20
PT-Ta Characteristics
1
10ms
1ms
100µs
–3
100µs
0.5
1ms
15
With Infinite Heatsink
10 ms
IC (A)
IC (A)
–1
–0.5
PT (W)
10
0.1
Single Pulse
Without Heatsink
Ta=25°C
0.05 3 5 10 50 100
VCE (V)
Single Pulse
Without Heatsink
Ta=25°C
–0.1
–3 –5 –10 –50 –100
VCE (V)
5
Without Heatsink
0
–40 0 50 100 150
Ta (°C)
151

STA301A
NPN Darlington
With built-in avalanche diode
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 4 A
ICP 8 (PW≤10ms, Du≤50%) A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=50V
IEBO 10 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 1000 VCE=4V, IC=3A
VCE(sat) 2.0 V IC=3A, IB=10mA
ton 1.0 µs VCC 30V,
tstg 4.0 µs IC=3A,
tf 1.5 µs IB1=–IB2=10mA
■Equivalent circuit diagram
2
3
4
5
6
7
1
R1
R2
8
R1: 3kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
5
4
IB=2.0mA
(VCE=4V)
(VCE=4V)
20000
20000
10000
10000
1.0mA
typ
5000
0.8mA
5000
IC (A)
3
2
0.6mA
0.5mA
0.4mA
hFE
1000
500
hFE
1000
Ta=125°C
25°C
–30°C
500
1
0.3mA
0
0 1 2 3 4
VCE (V)
100
50
0.05 0.1 0.5 1 4
IC (A)
100
0.05 0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=4V)
2
3
4
3
VCE (sat) (V)
1
125°C
25°C
Ta=–30°C
VCE (sat) (V)
2
1
IC=2A
IC=3A
IC=4A
IC (A)
2
Ta=125°C
75°C
25°C
–30°C
IC=1A
1
0
0.1
0.5 1 4
IC (A)
0
0.2 0.5 1 5 10 50 100
IB (mA)
0
0 1 2
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
30
10
16
14
12
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
10ms
1ms
θ j–a (°C / W)
5
PT (W)
10
8
6
50×50×2
25×50×2
IC (A)
1
0.5
1.0
4
2
Without Heatsink
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.5
1 5 10 50 100 500 1000
PW (mS)
0
–40 0 50 100 150
Ta (°C)
0.05
3 5 10 50 100
VCE (V)
152

STA302A
PNP Darlington
General purpose/3-phase motor drive
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –50 V
VCEO –50 V
VEBO –6 V
IC –4 A
ICP –8 (PW≤10ms, Du≤50%) A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –100 µA VCB=–50V
IEBO –10 mA VEB=–6V
VCEO –50 V IC=–10mA
hFE 1000 VCE=–4V, IC=–3A
VCE(sat) –2.0 V IC=–3A, IB=–10mA
ton 0.4 µs VCC –30V,
tstg 0.8 µs IC=–3A,
tf 0.6 µs IB1=–IB2=–10mA
■Equivalent circuit diagram
1
8
R1
R2
2
4
6
3
5
7
R1: 2kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IC (A)
–3
–2
–1
IB=–2.3mA
–1.8mA
–1.5mA
–1.2mA
–1.0mA
–0.9mA
–0.8mA
10000
5000
1000
hFE
500
(VCE=–4V)
typ
hFE
10000
5000
1000
500
Ta=125°C
25°C
–30°C
(VCE=–4V)
100
100
50
50
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
20
–0.03 –0.05 –0.1 –0.5 –1 –5 –6
IC (A)
20
–0.02 –0.05 –0.1 –0.5 –1 –4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=500)
(VCE=–4V)
–2
–3
–6
–5
VCE (sat) (V)
–1
Ta=–30°C
25°C
125°C
VCE (sat) (V)
–2
–1
IC=–1A
IC=–2A
IC=–4A
IC (A)
–4
–3
–2
Ta=125°C
–30°C
75°C
25°C
–1
0
–0.7
–1
IC (A)
–4
0
–0.2 –0.5 –1 –5 –10 –50
IB (mA)
–100
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
16
14
12
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
–10
–5
1ms
θ j–a (°C / W)
5
PT (W)
10
8
6
50×50×2
25×50×2
IC (A)
–1
–0.5
10ms
10
4
Without Heatsink
–0.1
0.5
1 5 10 50 100 500 1000
PW (mS)
2
0
–40 0 50 100 150
Ta (°C)
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50
VCE (V)
–100
153

STA303A
NPN Darlington
General purpose/3-phase motor drive
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 4 A
ICP 8 (PW≤10ms, Du≤50%) A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 100 V IC=10mA
hFE 1000 VCE=4V, IC=2A
VCE(sat) 2.0 V IC=2A, IB=10mA
ton 0.8 µs VCC 40V,
tstg 5.0 µs IC=2A,
tf 2.0 µs IB1=–IB2=10mA
■Equivalent circuit diagram
2
3
4
5
6
7
1
R1
R2
8
R1: 3kΩ typ R2: 500Ω typ
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
4
3
2
1
IB=1mA
0.8mA
0.6mA
0.5mA
0.4mA
0.3mA
(VCE=4V)
20000
10000
typ
5000
1000
500
100
0
0 1 2 3 4 5
50
0.02 0.05 0.1 0.5 1 4
VCE (V)
IC (A)
hFE
(VCE=4V)
20000
10000
5000
1000
500
100
50
0.02 0.05 0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=4V)
3
3
4
hFE
Ta=125°C
25°C
–30°C
3
VCE (sat) (V)
2
1
125°C
25°C
Ta=–30°C
VCE (sat) (V)
2
1
IC=1A
IC=2A
IC=4A
IC=3A
IC (A)
2
1
Ta=125°C
75°C
25°C
–30°C
0
0.2
0.5 1 4
IC (A)
0
0.2 0.5 1 5 10 50 100
IB (mA)
0 1 2
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
16
14
12
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
10ms
1ms
With Infinite Heatsink
θ j–a (°C / W)
5
PT (W)
10
8
6
50×50×2
25×50×2
IC (A)
1
0.5
1.0
4
Without Heatsink
0.1
0.5
1 5 10 50 100 500 1000
PW (mS)
2
0
–40 0 50 100 150
Ta (°C)
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50
VCE (V)
100 200
154

STA304A
NPN Darlington
3-phase motor drive
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 550 V
VCEO 550 V
VEBO 6 V
IC 1 A
ICP 2 (PW≤1ms, Du≤25%) A
IB 0.5 A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=550V
IEBO 75 150 mA VEB=6V
VCEO 550 V IC=100µA
hFE 200 400 1000 VCE=4V, IC=500mA
VCE(sat) 1.0 1.5 V
VBE(sat) 1.5 2.2 V
IC=500mA, IB=10mA
VFEC 1.1 1.5 V IFEC=1A
ton 0.5 µs VCC 200V,
tstg 3.5 µs IC=500mA,
tf 0.7 µs IB1=–IB2=10mA
fT 15 MHz VCE=12V, IE=–0.2A
Cob 35 pF VCB=10V, f=1MHz
2
3
4
5
6
7
R1
1
R2
8
R1: 500Ω typ R2: 70Ω typ
Characteristic curves
IC (A)
1.0
0.8
0.6
0.4
0.2
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=20mA
10mA
5mA
2mA
1.5mA
(VCE=4V)
1000
500
typ
hFE
100
50
hFE
(VCE=4V)
1000
500
100
50
Ta=125°C
75°C
25°C
–30°C
0
0 1 2 3 4 5 6
VCE (V)
10
0.03 0.05 0.1
0.5 1 2
IC (A)
10
0.03 0.05 0.1
0.5 1 2
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=100)
3
3
(VCE=4V)
2.0
1.5
VCE (sat) (V)
2
1
Ta=–30°C
25°C
75°C
125°C
VCE (sat) (V)
2
1
IC=1A
IC=0.5A
IC (A)
1.0
0.5
Ta=125°C
75°C
25°C
–30°C
0
0.2 0.5 1 2
IC (A)
0
1
5 10 50 100 500
IB (mA)
0
0
1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
θ j–a (°C / W)
20
10
5
PT (W)
16
14
12
10
8
6
25×50×2
With Infinite Heatsink
5
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
1
0.5
50×50×2 0.1
IC (A)
0.05
10ms
1ms
100µs
1.0
0.5
1 5 10 50 100 500 1000
PW (mS)
4
Without Heatsink
2
0
–40 0 50 100 150
Ta (°C)
0.01
Single Pulse
0.005 Without Heatsink
Ta=25°C
0.003
3 5 10 50 100 500 600
VCE (V)
155

STA305A
PNP Darlington
3-phase motor drive
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –550 V
VCEO –550 V
VEBO –6 V
IC –1 A
ICP –2 (PW≤1ms, Du≤25%) A
IB –0.5 A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –100 µA VCB=–550V
IEBO –10 –20 mA VEB=–6V
VCEO –550 V IC=–100µA
hFE 200 400 1000 VCE=–4V, IC=–500mA
VCE(sat) –1.0 –1.5 V
VBE(sat) –1.6 –2.2 V
IC=–500mA, IB=–10mA
ton 0.7 µs VCC –200V,
tstg 13.0 µs IC=–500mA,
tf 2.5 µs IB1=–IB2=–10mA
fT 15 MHz VCE=–12V, IE=0.2A
Cob 48 pF VCB=–10V, f=1MHz
1
8
R1 R2
2
4
6
3
R1: 500Ω typ R2: 70Ω typ
5
7
Characteristic curves
IC (A)
–1.0
–0.8
–0.6
–0.4
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=–20mA
–10mA
–5mA
–2mA
–1.5mA
hFE
(VCE=–4V)
1000
500
typ
100
50
hFE
(VCE=–4V)
1000
500
100
50
Ta=125°C
75°C
25°C
–30°C
–0.2
0
0 –1 –2 –3 –4 –5 –6
10
10
–0.03 –0.05 –0.1 –0.5 –1 –2
–0.03 –0.05 –0.1 –0.5 –1 –2
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=100)
(VCE=–4V)
–3
–3
–2.0
–1.5
VCE (sat) (V)
–2
–1
Ta=125°C
75°C
25°C
VCE (sat) (V)
–2
–1
IC=0.5A
IC=1A
IC (A)
–1.0
–0.5
Ta=125°C
75°C
25°C
–30°C
–30°C
0
–0.2 –0.5 –1 –2
IC (A)
0
–1
–5 –10 –50 –100 –500
IB (mA)
0
0
–1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
θ j–a (°C / W)
20
10
5
PT (W)
16
14
12
10
8
6
50×50×2
25×50×2
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
With Infinite Heatsink
IC (A)
–5
–1
–0.5
–0.1
–0.05
10ms
1ms
100µs
1.0
0.5
1 5 10 50 100 500 1000
PW (mS)
4
2
Without Heatsink
0
–40 0 50 100 150
Ta (°C)
–0.01
Single Pulse
–0.005 Without Heatsink
Ta=25°C
–0.003
–3 –5 –10 –50 –100 –500 –600
VCE (V)
156

STA308A
PNP Darlington
General purpose
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –120 V
VCEO –120 V
VEBO –6 V
IC –4 A
IB –1 A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–120V
IEBO –10 mA VEB=–6V
VCEO –120 V IC=–10mA
hFE 2000 VCE=–4V, IC=–2A
VCE(sat) –1.5 V
VBE(sat) –2.5 V
IC=–2A, IB=–4mA
■Equivalent circuit diagram
1
8
R1
R2
2
4
6
3
5
7
R1: 5kΩ typ R2: 100Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=–4V)
(VCE=–4V)
–4
10000
10000
IB=–5mA
–2mA
75°C
–1.5mA
25°C
5000
5000
typ
–3
–1.0mA
Ta=125°C
IC (A)
–2
–0.7mA
–0.5mA
hFE
1000
500
hFE
1000
500
–30°C
–1
–0.3mA
100
100
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
50
–0.03 –0.05 –0.1 –0.5 –1 –4
IC (A)
50
–0.03 –0.05 –0.1 –0.5 –1 –4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
VCE (sat) (V)
–3
–2
–1
125°C
(IC / IB=1000)
75°C 25°C Ta=–30°C –3
VCE (sat) (V)
–2
–1
IC=–1A
IC=–2A
IC=–4A
IC (A)
–4
–3
–2
–1
75°C
Ta=125°C
25°C
–30°C
(VCE=–4V)
0
–0.2
–0.5 –1 –4
IC (A)
0
–0.1 –0.5 –1 –5 –10 –50 –100
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
16
14
12
With Infinite Heatsink
With Silicone Grease
Single Pulse
Without Heatsink
Ta=25°C
in mm
–10
–5
10ms
1ms
100µs
θ j–a (°C / W)
5
PT (W)
10
8
6
50×50×2
25×50×2
IC (A)
–1
–0.5
1
4
Without Heatsink
–0.1
0.5
1 5 10 50 100 500 1000
PW (mS)
2
0
–40
0 50 100 150
Ta (°C)
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100 –200
VCE (V)
157

STA312A
NPN
General purpose
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60 V
VCEO 60 V
VEBO 6 V
IC 3 A
ICP 6 (PW≤10ms, Du≤50%) A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=60V
IEBO 100 µA VEB=6V
VCEO 60 V IC=25mA
hFE 300 VCE=4V, IC=0.5A
VCE(sat) 1.0 V IC=1A, IB=10mA
ton 0.8 µs VCC 20V,
tstg 3.0 µs IC=1A,
tf 1.2 µs IB1=15mA, IB2=–30mA
■Equivalent circuit diagram
2
1
3
4
5
6
7
8
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
(VCE=4V)
3
2000
2000
IB=12mA
8mA
2
5mA
1000
typ
1000
Ta=125°C
75°C
25°C
IC (A)
3mA
2mA
hFE
500
hFE
500
–30°C
1
1mA
0.5mA
0
0 1 2 3 4 5 6
VCE (V)
100
0.01 0.05 0.1 0.5 1 3
IC (A)
100
0.01 0.05 0.1 0.5 1 3
IC (A)
VCE(sat), VBE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=20)
(VCE=4V)
1.5
1.5
3
VCE (sat), VBE (sat) (V)
1.0
0.5
VBE (sat)
VCE (sat) (V)
1.0
0.5
IC= 3A
IC (A)
2
1
Ta=125°C
75°C
25°C
–30°C
VCE (sat)
0
0.01 0.05 0.1 0.5 1 5
IC (A)
IC=2A
IC=1A
0
0.001 0.005 0.01 0.05 0.1 0.5 1
IB (A)
0
0 0.5 1.0 1.5
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
16
14
12
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
10ms
1ms
With Infinite Heatsink
θ j–a (°C / W)
5
PT (W)
10
8
6
50×50×2
25×50×2
IC (A)
1
0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
4
2
0
–40
Without Heatsink
0 50 100 150
Ta (°C)
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
3 5 10 50 100
VCE (V)
158

STA322A
PNP
General purpose
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –50 V
VCEO –50 V
VEBO –5 V
IC –3 A
ICP –5 (PW≤1ms, Du≤50%) A
IB –1 A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–50V
IEBO –10 µA VEB=–8V
VCEO –50 V IC=–25mA
hFE 100 350 VCE=–4V, IC=–1A
VCE(sat) –1.0 V
VBE(sat) –1.5 V
IC=–2A, IB=–40mA
■Equivalent circuit diagram
1
2
3
4
5
6
7
8
Characteristic curves
–5
–4
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=–80mA
–60mA
(VCE=–4V)
(VCE=–4V)
1000
1000
–50mA
–40mA
500
500
Ta=125°C
–30mA
IC (A)
–3
–2
–20mA
–10mA
hFE
100
typ
hFE
100
25°C
–30°C
–1
–5mA
50
50
0 0 –1 –2 –3 –4 –5 –6
VCE (V)
30
–0.01 –0.05 –0.1 –0.5 –1 –5
IC (A)
30
–0.01 –0.05 –0.1 –0.5 –1 –5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=50)
(VCE=–4V)
–1.0
–2
–3
25°C
VCE (sat) (V)
–0.5
Ta=125°C
–30°C
VCE (sat) (V)
–1
IC=–2A
IC (A)
–2
–1
75°C
Ta=125°C
25°C
–30°C
IC=–0.5A
IC=–1A
0
–0.01
–0.05 –0.1 –0.5 –1 –5
IC (A)
0
–0.002 –0.005 –0.01 –0.05 –0.1 –0.5 –1
IB (A)
0
0 –0.5 –1.0 –1.5
VBE (V)
θ j–a (°C / W)
30
10
5
1
0.5
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
0.1
0.1 0.5 1 5 10 50 100 5001000 5000
PW (mS)
PT (W)
16
14
12
10
8
6
4
2
0
–40
50×50×2
25×50×2
Without Heatsink
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
0 50 100 150
Ta (°C)
IC (A)
–10
–5
–1
–0.5
–0.1
–0.05
–0.5
Single Pulse
Without Heatsink
Ta=25°C
–1 –5 –10
VCE (V)
10ms
5ms
1ms
–50
159

75°C
25°C
–30°C
hFE
STA371A
NPN Darlington
With built-in avalanche diode
External dimensions C • • • STA (8-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 2 A
ICP 4 (PW≤1ms, Du≤25%) A
IB 0.5 A
PT
3 (Ta=25°C)
W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=50V
IEBO 5 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.8 2.2 V
IC=1A, IB=2mA
VFEC 1.3 1.8 V IFEC=1A
ton 0.5 µs VCC 30V,
tstg 4.0 µs IC=1A,
tf 1.0 µs IB1=–IB2=2mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 25 pF VCB=10V, f=1MHz
2
3
4
5
6
7
1
R1
R2
8
R1: 3.5kΩ typ R2: 200Ω typ
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
4
3
2
IB=10.0mA
5.0mA
2.0mA
1.0mA
0.6mA
0.4mA
0.3mA
hFE
(VCE=4V)
10000
Typ
5000
1000
500
20000
10000
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
(VCE=4V)
1
0
0 1 2 3
VCE (V)
3
4 5 6
(IC / IB=1000)
100
50
30
0.02
3
0.05 0.1
0.5 1
4
IC (A)
(IC=1A)
100
50
30
0.02 0.05 0.1 0.5 1 4
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
4
IC (A)
(VCE=4V)
Ta=125°C
75°C
25°C
–30°C
3
Ta=125°C
VCE (sat) (V)
2
1
VCE (sat) (V)
2
1
IC (A)
2
1
75°C
Ta=125°C
25°C
–30°C
0
0.2 0.5 1
IC (A)
4
0
0.1
0.5 1
IB (mA)
3
0
0 1 2
3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
30
10
16
14
12
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
With Infinite Heatsink
5
10 ms
1ms
100µs
θ j–a (°C / W)
5
PT (W)
10
8
6
50×50×2
25×50×2
IC (A)
1
0.5
1
0.5
0
0.2 0.5 1 5 10 50 100 500 1000
–40
PW (mS)
4
2
Without Heatsink
0 50 100 150
Ta (°C)
0.1
Single Pulse
Without Heatsink
Ta=25°C
0.05 3 5 10 50 100
VCE (V)
160

STA401A
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 4 A
ICP 8 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=50V
IEBO 10 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 1000 VCE=4V, IC=3A
VCE(sat) 2.0 V IC=3A, IB=10mA
ton 1.0 µs VCC 30V,
tstg 4.0 µs IC=3A,
tf 1.5 µs IB1=–IB2=10mA
■Equivalent circuit diagram
2
3
4
5
6
7
8
9
1
R1
R2
10
R1: 3kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
5
4
IB=2.0mA
1.0mA
0.8mA
20000
10000
5000
(VCE=4V)
typ
20000
10000
5000
(VCE=4V)
IC (A)
3
2
0.6mA
0.5mA
0.4mA
hFE
1000
500
hFE
1000
Ta=125°C
25°C
–30°C
500
1
0.3mA
100
0
0 1 2 3 4
100
50
0.05 0.1 0.5 1 4
0.05 0.1 0.5 1 4
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
2
(IC / IB=1000)
3
4
(VCE=–4V)
3
VCE (sat) (V)
1
125°C
25°C
Ta=–30°C
VCE (sat) (V)
2
1
IC=1A
IC=2A
IC=3A
IC=4A
IC (A)
2
1
Ta=125°C
75°C
25°C
–30°C
0
0.1
0.5 1 4
IC (A)
0
0.2 0.5 1 5 10 50 100
IB (mA)
0
0 1
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
2
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
1ms
10ms
θ j–a (°C / W)
5
PT (W)
16
12
8.0
100×100×2
50×50×2
25×50×2
IC (A)
1
0.5
1.0
0.5
1 5 10 50 100 500 1000
PW (mS)
Without Heatsink
4.0
0
–40 0 50 100 150
Ta (°C)
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
3 5 10 50
VCE (V)
100
161

STA402A
PNP Darlington
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –50 V
VCEO –50 V
VEBO –6 V
IC –4 A
ICP –8 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –100 µA VCB=–50V
IEBO –10 mA VEB=–6V
VCEO –50 V IC=–10mA
hFE 1000 VCE=–4V, IC=–3A
VCE(sat) –2.0 V IC=–3A, IB=–10mA
ton 0.4 µs VCC –30V,
tstg 0.8 µs IC=–3A,
tf 0.6 µs IB1=–IB2=–10mA
■Equivalent circuit diagram
1 R1 R2
10
2
3
4
5
6
7
8
9
R1: 2kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–6
–5
IB=–2.3mA
–1.8mA
–1.5mA
–1.2mA
10000
5000
(VCE=–4V)
typ
10000
5000
(VCE=–4V)
–4
–1.0mA
1000
1000
IC (A)
–3
–2
–0.8mA
hFE
500
100
hFE
500
100
Ta=125°C
25°C
–30°C
–1
50
50
0
20
20
0 –1 –2 –3 –4 –5 –6
–0.02 –0.05 –0.1 –0.5 –1 –4
–0.02 –0.05 –0.1 –0.5 –1 –4
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
–2
(IC / IB=500)
–3
–4
(VCE=–4V)
–3
VCE (sat) (V)
–1
Ta=–30°C
25°C
125°C
VCE (sat) (V)
–2
–1
IC=–1A
IC=–4A
IC=–2A
IC (A)
–2
–1
Ta=125°C
75°C
25°C
–30°C
0
–0.7
–1
IC (A)
–4
0
–0.5 –0.1 –5 –10 –50
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
–10
–5
1ms
10ms
θ j–a (°C / W)
5
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
IC (A)
–1
–0.5
10
0.5
1 5 10 50 100 500 1000
PW (mS)
Without Heatsink
4.0
0
–40 0 50 100 150
Ta (°C)
–0.1
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50
VCE (V)
–100
162

STA403A
NPN Darlington
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 4 A
ICP 8 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=120V
IEBO 10 mA VEB=6V
VCEO 100 V IC=10mA
hFE 1000 VCE=4V, IC=2A
VCE(sat) 2.0 V IC=2A, IB=10mA
ton 0.6 µs VCC 40V,
tstg 5.0 µs IC=2A,
tf 2.0 µs IB1=–IB2=10mA
■Equivalent circuit diagram
2
3
4
5
6
7
8
9
1
R1 R2
10
R1: 3kΩ typ R2: 500Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
4
3
IB=1mA
0.8mA
0.6mA
0.5mA
20000
10000
5000
(VCE=4V)
typ
20000
10000
5000
(VCE=4V)
0.4mA
IC (A)
2
1
0.3mA
hFE
1000
500
hFE
1000
500
Ta=125°C
25°C
–30°C
100
100
0
50
50
0 1 2 3 4 5
0.02 0.05 0.1 0.5 1 4
0.02 0.05 0.1
0.5 1 4
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=4V)
3
3
4
3
VCE (sat) (V)
2
1
125°C
25°C
Ta=–30°C
VCE (sat) (V)
2
1
IC=2A
IC=1A
IC=3A
IC=4A
IC (A)
2
1
Ta=125°C
75°C
25°C
–30°C
0
0.2
0.5 1 4
IC (A)
0
0.2 0.5 1 5 10 50 100
IB (mA)
0 1 2
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
1ms
θ j–a (°C / W)
5
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
IC (A)
1
0.5
1.0
0.5
1 5 10 50 100 500 1000
PW (mS)
Without Heatsink
4.0
0
–40 0 50 100 150
Ta (°C)
10ms
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50
VCE (V)
100
163

STA404A
NPN Darlington
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 200 V
VCEO 200 V
VEBO 6 V
IC 3 A
ICP 6 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=200V
IEBO 10 mA VEB=6V
VCEO 200 V IC=10mA
hFE 1000 VCE=4V, IC=1A
VCE(sat) 2.0 V IC=1A, IB=1.5mA
■Equivalent circuit diagram
2
3
4
5
6
7
8
9
1
R1 R2
10
R1: 2kΩ typ R2: 200Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
6
IB=200mA
100mA
5000
(VCE=4V)
5000
(VCE=4V)
IC (A)
5
4
3
2
1
30mA
10mA
3mA
1mA
0
0 1 2 3 4 5 6
VCE (V)
hFE
1000
500
100
50
30
0.03 0.05 0.1 0.5 1 5 6
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
3
(IC / IB=100)
3
hFE
1000
500
100
Ta=125°C
75°C
25°C
–30°C
50
30
0.03 0.05 0.1 0.5 5 6
IC (A)
6
(VCE=4V)
5
VCE (sat) (V)
2
1
–30°C
25°C
75°C
VCE (sat) (V)
2
1
IC=1A
IC=3A
IC=1.5A
IC (A)
4
3
2
Ta=125°C
75°C
25°C
Ta=125°C
1
–30°C
0
0.2 0.5 1 5 6
IC (A)
0
0.5 1 5 10 50 100 200
IB (mA)
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
1µS
1mS
θ j–a (°C / W)
5
1
0.5
1 5 10 50 100 5001000
PW (mS)
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
0
–40 0 50 100 150
Ta (°C)
IC (A)
10mS
1
0.5
0.1
Single Pulse
0.05
Without Heatsink
0.03
5
Ta=25°C
10 50 100 200
VCE (V)
164

STA406A
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 6 A
IB 1 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=50V
IEBO 10 mA VEB=6V
VCEO 50 60 70 V IC=50mA
hFE 2000 15000 VCE=2V, IC=3A
VCE(sat) 1.5 V
IC=3A, IB=10mA
VBE(sat) 2.0 V
ES/B 200 mJ VCC 20V, L=10mH, IC=6.4A
■Equivalent circuit diagram
2
3
4
5
6
7
8
9
1
R1
R2
10
R1: 3kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
6
IB=10mA
1.5mA
1mA
20000
10000
(VCE=2V)
20000
10000
(VCE=2V)
5
0.8mA
5000
typ
5000
4
IC (A)
3
2
0.6mA
0.4mA
hFE
1000
500
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
1
0
0 1 2 3 4 5 6
VCE (V)
100
50
30
0.03 0.05 0.1 0.5 1 5 6
100
50
30
0.03 0.05 0.1 0.5 1 5 6
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
3
(IC / IB=1000)
3
6
(VCE=2V)
5
VCE (sat) (V)
2
1
Ta=–30°C
25°C
75°C
125°C
0
0.3 0.5 1 5 6
IC (A)
VCE (sat) (V)
2
1
0
0.1 0.5 1 5 10 50 100
IB (mA)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
IC=1A
IC=6A
IC=3A
IC (A)
4
3
2
1
Ta=125°C
75°C
25°C
–30°C
0
0 1 2 3
VBE (V)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
20
10
5
10ms
1ms
100µs
θ j–a (°C / W)
5
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
IC (A)
1
0.5
1
4.0
Without Heatsink
0.5
0
1 5 10 50 100 500 1000 –40 0 50 100 150
PW (mS)
Ta (°C)
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
3 5 10 50 100
VCE (V)
165

1ms
STA408A
PNP Darlington
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –120 V
VCEO –120 V
VEBO –6 V
IC –4 A
IB –1 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–120V
IEBO –10 mA VEB=–6V
VCEO –120 V IC=–10mA
hFE 2000 VCE=–4V, IC=–2A
VCE(sat) –1.5 V
IC=–2A, IB=–4mA
VBE(sat) –2.5 V
■Equivalent circuit diagram
1
10
R1 R2
2
4
6
8
3
5
7
9
R1: 5kΩ typ R2: 100Ω typ
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–4
IB=–5mA
–2mA
–1.5mA
–3
–1.0mA
–0.7mA
–2
–0.5mA
hFE
(VCE=–4V)
10000
5000
typ
1000
500
hFE
10000
5000
1000
500
Ta=125°C
(VCE=–4V)
75°C
–30°C
25°C
–1
–0.3mA
100
100
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
–3
(IC / IB=1000)
50
–0.03 –0.05 –0.1 –0.5 –1 –4
IC (A)
–3
50
–0.03 –0.05 –0.1 –0.5 –1 –4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
–4
(VCE=–4V)
–3
VCE (sat) (V)
–2
Ta=–30°C
–1
75°C 25°C 125°C
VCE (sat) (V)
–2
–1
IC=–1A
IC=–2A
IC=–4A
IC (A)
–2
–1
Ta=125°C
–30°C
75°C
25°C
0
–0.2
–0.5 –1 –4
IC (A)
0
–0.1 –0.5 –1 –5 –10 –50 –100
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
–10
–5
100µs
θ j–a (°C / W)
5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
0
–40 0 50 100 150
Ta (°C)
IC (A)
–1
–0.5
–0.1
10ms
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100 –200
VCE (V)
166

STA412A
NPN
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60 V
VCEO 60 V
VEBO 6 V
IC 3 A
ICP 6 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=60V
IEBO 100 µA VEB=6V
VCEO 60 V IC=25mA
hFE 300 VCE=4V, IC=0.5A
VCE(sat) 1.0 V IC=1A, IB=10mA
ton 0.8 µs VCC 20V,
tstg 3.0 µs IC=1A,
tf 1.2 µs IB1=15mA, IB2=–30mA
■Equivalent circuit diagram
2
1
3
4
5
6
7
8
9
10
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
3
2000
2000
IB=12mA
8mA
1000
5mA
typ
1000
2
Ta=125°C
75°C
25°C
(VCE=4V)
IC (A)
3mA
2mA
hFE
500
hFE
500
–30°C
1
1mA
0.5mA
0
0 1 2 3 4 5 6
VCE (V)
100
0.01 0.05 0.1 0.5 1 3
IC (A)
100
0.01 0.05 0.1 0.5 1 3
IC (A)
VCE(sat), VBE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=20)
(VCE=4V)
1.5
1.5
3
VCE (sat), VBE (sat) (V)
1.0
0.5
VBE (sat)
VCE (sat)
VCE (sat) (V)
1.0
0.5
IC=1A
IC=3A
IC=2A
IC (A)
2
1
75°C
Ta=125°C
25°C
–30°C
0
0.01 0.05 0.1 0.5 1 5
IC (A)
0
0.001 0.005 0.01 0.05 0.1 0.5 1
IB (A)
0
0 0.5 1.0 1.5
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10
5
10ms
1ms
θ j–a (°C / W)
5
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
IC (A)
1
0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
Without Heatsink
4.0
0
–40 0 50 100 150
Ta (°C)
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
3 5 10 50 100
VCE (V)
167

STA413A
NPN
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 35±5 V
VCEO 35±5 V
VEBO 6 V
IC 3 A
IB 1 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=30V
IEBO 10 µA VEB=6V
VCEO 30 40 V IC=25mA
hFE 500 VCE=4V, IC=0.5A
VCE(sat) 0.5 V IC=1A, IB=5mA
■Equivalent circuit diagram
3
5
7
9
2
4
6
8
1
10
Characteristic curves
3.0
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
15mA
10mA
8mA
6mA
5mA
(VCE=4V)
(VCE=4V)
5000
5000
IC (A)
2.0
1.0
4mA
3mA
2mA
IB=1mA
hFE
1000
500
typ
hFE
1000
500
25°C
Ta=125°C
75°C
–55°C
0
0 1.0 2.0 3.0
VCE (V)
100
0.01
0.05 0.1 0.5 1 3
IC (A)
100
0.01 0.05 0.1 0.5 1 3
IC (A)
VCE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(VCE=4V)
1.2
1.2
4.0
VCE (sat) (V)
1.0
0.5
IC / IB=500
VCE (sat) (V)
1.0
0.5
2A
IC=3A
IC (A)
3.0
2.0
0
0.01
0.05 0.1 0.5 1
IC (A)
100
20
3
0
1
0.5A
1A
5 10 50 100 500 1000
IB (mA)
1.0
Ta=125°C
75°C
25°C
–55°C
0
0 0.5 1.0 1.5
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20.0
10.0
5.0
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
10.0
5.0
10ms
1ms
θ j–a (°C / W)
1.0
0.5
0.1
0.1 0.5 1.0 5.0 10 50100 5001000 5000
PW (mS)
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
0
–40 0 50 100 150
Ta (°C)
IC (A)
1.0
DC (TC=25°C)
100ms
0.5
Single Pulse
Without Heatsink
Ta=25°C
0.2
2 5 10 50
VCE (V)
168

10ms
STA421A
PNP
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –3 A
ICP –6 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –100 µA VCB=–60V
IEBO –100 µA VEB=–6V
VCEO –60 V IC=–25mA
hFE 40 VCE=–4V, IC=–1A
VCE(sat) –1.0 V IC=–2A, IB=–0.2A
ton 0.25 µs VCC –12V,
tstg 0.75 µs IC=–2A,
tf 0.25 µs IB1=–IB2=–0.2A
■Equivalent circuit diagram
1
2 4
6
8
3
5
7
9
10
Characteristic curves
IC (A)
–4
–3
–2
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=–80mA
–60mA
–50mA
–40mA
–30mA
–20mA
hFE
(VCE=–4V)
500
typ
100
hFE
500
100
Ta=125°C
75°C
25°C
–30°C
(VCE=–4V)
–1
–10mA
50
50
–5mA
0
0 –1 –2
–3 –4 –5
VCE (V)
–6
20
–0.01
–0.05 –0.1 –0.5 –1 –4
IC (A)
20
–0.01
–0.05 –0.1 –0.5 –1 –4
IC (A)
VCE(sat), VBE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=10)
(VCE=–4V)
–1.0
–1.5
–4
VCE (sat), VBE (sat) (V)
–0.5
0
–0.05
VBE (sat)
VCE (sat)
–0.1 –0.5 –1
IC (A)
–3
VCE (sat)
–1.0
–0.5
0
–0.01
–1A
–0.05
–2A
IC=–3A
–0.1 –0.5 –1
IB (A)
IC (A)
–3
–2
–1
0
0
Ta=125°C
75°C
25°C
–30°C
–0.5
–1.0
VBE (V)
–1.5
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
–10
–5
1ms
θ j–a (°C / W)
5
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
IC (A)
–1
–0.5
1.0
Without Heatsink
4.0
Single Pulse
–0.1 Without Heatsink
Ta=25°C
0.5
1
5 10 50 100 500 1000
PW (mS)
0
–40 0 50 100 150
Ta (°C)
–0.05
–3 –5
–10 –50 –100
VCE (V)
169

STA431A
PNP + NPN
H-bridge
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 3 –3 A
ICP 6 (PW≤10ms, Du≤50%) –6 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
10
6
8
7 9
3 5
2 4
1
Characteristic curves
4
3
IB=70mA
60mA
50mA
40mA
30mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
–4
–3
IB=–80mA
–60mA
–50mA
–40mA
–30mA
4
3
(VCE=4V)
IC (A)
2
20mA
IC (A)
–2
–20mA
IC (A)
2
1
0
0
10mA
5mA
1 2 3 4 5 6
VCE (V)
–1
0
0 –1 –2
–10mA
–5mA
–3 –4 –5 –6
VCE (V)
1
0
0
Ta=125°C
75°C
25°C
–30°C
0.5 1.0
1.5
VBE (V)
500
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
500
–4
(VCE=–4V)
–3
hFE
100
typ
hFE
100
typ
IC (A)
–2
50
20
0.01
0.05
0.1 0.5 1 4
IC (A)
50
20
–0.01
–0.05
–0.1 –0.5
IC (A)
–1 –4
–1
0
0
75°C
Ta=125°C
25°C
–30°C
–0.5 –1.0
–1.5
VBE (V)
500
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
500
PNP
(VCE=–4V)
hFE
100
Ta=125°C
75°C
25°C
–30°C
hFE
100
Ta=125°C
75°C
25°C
–30°C
50
50
20
0.01
0.05
0.1 0.5 1 4
IC (A)
20
–0.01
–0.05 0.1 –0.5 –1 –4
IC (A)
170

10ms
STA431A
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 100 µA VCB=60V –100 µA VCB=–60V
IEBO 100 µA VEB=6V –100 µA VEB=–6V
VCEO 60 V IC=25mA –60 V IC=–25mA
hFE 40 VCE=4V, IC=1A 40 VCE=–4V, IC=–1A
VCE(sat) 1.0 V IC=2A, IB=0.2A –1.0 V IC=–2A, IB=–0.2A
ton 0.2 µs VCC 12V, 0.25 µs VCC –12V,
tstg 1.0 µs IC=2A, 0.75 µs IC=–2A,
tf 0.3 µs IB1=–IB2=0.2A 0.25 µs IB1=–IB2=–0.2A
Characteristic curves
1.5
NPN
VCE(sat)-IB Characteristics (Typical)
–1.5
PNP
20
θ j-a-PW Characteristics
10
VCE (sat) (V)
1.0
0.5
2A
IC=3A
VCE (sat) (V)
–1.0
–0.5
2A
IC=3A
θ j–a (°C / W)
5
1A
1A
1.0
0
0.005 0.01
0.05 0.1 0.5 1
IB (A)
0
–0.005 –0.01
–0.05 –0.1 –0.5 –1
IB (A)
0.5
1
5 10 50 100 500 1000
PW (mS)
1.0
NPN
VCE(sat), VBE(sat)-IC Characteristics (Typical)
(IC / IB=10)
–1.0
PNP
(IC / IB=10)
24
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
With Infinite Heatsink
Heatsink: Aluminum
in mm
VCE (sat) • VBE (sat) (V)
0.5
VBE (sat)
VCE (sat) • VBE (sat) (V)
–0.5
VBE (sat)
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
VCE (sat)
0
0.05 0.1 0.5 1
IC (A)
3
VCE (sat)
0
–0.05 –0.1 –0.5 –1
IC (A)
–3
0
–40 0 50 100 150
Ta (°C)
Safe Operating Area (SOA)
NPN
PNP
10
–10
5
1ms
–5
1ms
10ms
IC (A)
1
0.5
IC (A)
–1
–0.5
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
3
5
10 50 100
VCE (V)
Single Pulse
–0.1 Without Heatsink
Ta=25°C
–0.05
–3
–5
–10 –50 –100
VCE (V)
171

STA434A
PNP + NPN Darlington
H-bridge
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 80 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
ICP 8 (PW≤10ms, Du≤50%) –8 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
10
R1
R2
6
2
7
3
9
5
8
4
R3 R4
R1: 2kΩ typ R2: 150Ω typ R3: 3kΩ typ R4: 200Ω typ
1
Characteristic curves
IC (A)
6
4
2
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
IB=4.0mA
2.0mA
1.2mA
0.8mA
0.6mA
0.5mA
0.4mA
IC (A)
–6
–5
–4
–3
–2
–1
IB=–2.3mA
–1.8mA
–1.5mA
–1.2mA
–1.0mA
–0.8mA
IC (A)
4
3
2
1
Ta=125°C
75°C
25°C
–30°C
(VCE=4V)
0
0 2
VCE (V)
4 6
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
0
0
1 2
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
10000
–4
(VCE=–4V)
10000
5000
typ
5000
typ
–3
1000
hFE
1000
500
hFE
500
IC (A)
–2
100
50
30
0.03 0.05 0.1
0.5 1
IC (A)
4
100
50
20
–0.02 –0.05 –0.1 –0.5 –1 –4
IC (A)
–1
Ta=125°C
75°C
25°C
0
0 –1 –2 –3
VBE (V)
–30°C
hFE
20000
10000
5000
1000
500
Ta=125°C
hFE-IC Temperature Characteristics (Typical)
NPN
(VCE=4V constant)
10000
5000
25°C
–30°C
hFE
1000
500
PNP
(VCE=4V constant)
Ta=125°C
25°C
–30°C
100
50
100
50
30
0.05 0.1 0.5 1 4
IC (A)
20
–0.02
–0.05 –0.1 –0.5 –1 –4
IC (A)
172

1ms
STA434A
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 100 µA VCB=80V –100 µA VCB=–60V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 1000 VCE=4V, IC=3A 1000 VCE=–4V, IC=–3A
VCE(sat) 2.0 V IC=3A, IB=10mA –2.0 V IC=–2A, IB=–10mA
ton 1.0 µs VCC 30V, 0.4 µs VCC –30V,
tstg 4.0 µs IC=3A, 0.8 µs IC=–3A,
tf 1.5 µs IB1=–IB2=10mA 0.6 µs IB1=–IB2=–10mA
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
20
θj-a-PW Characteristics
10
VCE (sat) (V)
2
1
IC=4A
3A
2A
1A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–4A
IC=–2A
θ j–a (°C / W)
5
1.0
0
0.2
0.5
1
5
IB (mA)
10 50 100
0
–0.5 –0.1 –5 –10 –50
IB (mA)
0.5
1
5 10 50 100 500 1000
PW (mS)
2.0
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000) –2
(IC / IB=1000)
PT-Ta Characteristics
24
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
20
in mm
With Infinite Heatsink
VCE (sat) (V)
1.0
75°C
125°C
25°C
Ta=–30°C
VCE (sat) (V)
–1
Ta=–30°C
25°C
125°C
PT (W)
16
12
8.0
100×100×2
25×50×2
Without Heatsink
4.0
0
0.1 0.5 1
IC (A)
4
0
–0.5
–1
IC (A)
–4
0
–40 0 50 100 150
Ta (°C)
NPN
Safe Operating Area (SOA)
PNP
–10
–10
–5
–5
1ms
10ms
10ms
IC (A)
–1
IC (A)
–1
–0.5
–0.5
–0.1
–3
Single Pulse
Without Heatsink
Ta=25°C
–5
–10 –50
VCE (V)
–100
Single Pulse
Without Heatsink
–0.1 Ta=25°C
–0.07
–3 –5 –10 –50
VCE (V)
–100
173

STA435A
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 65±15 V
VCEO 65±15 V
VEBO 6 V
IC 4 A
ICP 8 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 100 µA VCB=50V
IEBO 10 mA VEB=6V
VCEO 50 65 80 V IC=10mA
hFE 1000 VCE=4V, IC=3A
VCE(sat) 2.0 V IC=3A, IB=10mA
ton 1.0 µs VCC 30V,
tstg 4.0 µs IC=3A,
tf 1.5 µs IB1=–IB2=10mA
■Equivalent circuit diagram
2
3
4
5
6
7
8
9
1
R1
R2
10
R1: 3kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
5
20000
(VCE=4V)
20000
(VCE=4V)
IC (A)
4
3
2
IB=2.0mA
1.0mA
0.8mA
0.6mA
0.5mA
0.4mA
hFE
10000
5000
1000
500
typ
hFE
10000
5000
1000
Ta=125°C
25°C
–30°C
500
1
0.3mA
100
0
0 1 2 3 4
VCE (V)
50
100
0.05 0.1 0.5 1 4
0.05 0.1 0.5 1 4
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
2
(IC / IB=1000)
3
4
(VCE=–4V)
3
VCE (sat) (V)
1
125˚C
25˚C
Ta=–30°C
VCE (sat) (V)
2
1
2A
3A
IC=4A
IC (A)
2
1A
1
Ta=125°C
75°C
25°C
–30°C
0
0.1 0.5 1
IC (A)
4
0
0.2 0.5 1 5 10 50 100
IB (mA)
0
0 1
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
2
30
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
5
10ms
1ms
100µs
θ j–a (°C / W)
5
PT (W)
16
12
8.0
100×100×2
50×50×2
25×50×2
IC (A)
1
0.5
1.0
0.5
1 5 10 50 100 500 1000
PW (ms)
Without Heatsink
4.0
0
–40 0 40 50 80 100 120 150
Ta (°C)
0.1
Single Pulse
Without Heatsink
Ta=25°C
0.05 3 5 10 50 100
VCE (V)
174

STA457C
PNP + NPN Darlington
H-bridge
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
ICP 8 (PW≤10ms, Du≤50%) –8 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
R3
R4
2
7
1
4
3
8
6
9
R1 R2
5
10
R1: 3kΩ typ R2: 200Ω typ R3: 2kΩ typ R4: 150Ω typ
Characteristic curves
IC (A)
6
4
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
IB=4.0mA
2.0mA
1.2mA
0.8mA
0.6mA
0.5mA
IC (A)
–6
–5
–4
–3
IB=–2.3mA–1.8mA
–1.5mA
–1.2mA
–1.0mA
–0.8mA
IC (A)
4
3
2
(VCE=4V)
2
0.4mA
–2
–1
1
Ta=125°C
75°C
25°C
–30°C
0
0 2
VCE (V)
4 6
0
0 –1 –2 –3 –4 –5 –6
VCE (V)
0
0
1 2
VBE (V)
20000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
10000
–4
(VCE=–4V)
10000
5000
typ
5000
typ
–3
1000
hFE
1000
500
hFE
500
IC (A)
–2
Ta=125°C
75°C
25°C
–30°C
100
50
30
0.03 0.05 0.1
0.5 1
IC (A)
4
100
50
20
–0.02 –0.05 –0.1 –0.5 –1 –4
IC (A)
–1
0
0 –1 –2 –3
VBE (V)
20000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10000
PNP
(VCE=4V)
10000
5000
5000
hFE
1000
Ta=125°C
25°C
–30°C
hFE
1000
500
Ta=125°C
25°C
–30°C
500
100
50
100
0.05 0.1 0.5 1 4
IC (A)
20
–0.02
–0.05 –0.1 –0.5 –1 –4
IC (A)
176

STA457C
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 2000 VCE=4V, IC=2A 2000 VCE=–4V, IC=–2A
VCE(sat) 1.5 V
–1.5 V
IC=2A, IB=4mA
VBE(sat) 2.0 V –2.0 V
IC=–2A, IB=–4mA
VFEC 1.6 V IFEC=2A –1.6 V IFEC=–2A
Characteristic curves
NPN
VCE(sat)-IB Characteristics (Typical)
PNP
θ j-a-PW Characteristics
3
–3
20
10
VCE (sat) (V)
2
1
IC=4A
3A
2A
1A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–4A
IC=–2A
θ j–a (°C / W)
5
1.0
0
0.2
0.5
1
5 10 50 100
IB (mA)
0
–0.5 –0.1 –5 –10 –50
IB (mA)
0.5
1
5 10 50 100 500 1000
PW (mS)
2.0
NPN
VCE(sat)-IC Temperature Characteristics (Typical)
(IC / IB=1000)
–2
PNP
(IC / IB=1000)
24
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
With Infinite Heatsink
Heatsink: Aluminum
in mm
VCE (sat) (V)
1.0
125°C
75°C
25°C
Ta=–30°C
VCE (sat) (V)
–1
Ta=–30°C
25°C
125°C
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
0
0.1 0.5 1
IC (A)
4
0
–0.5
–1
IC (A)
–4
0
–40 0 50 100 150
Ta (°C)
–10
NPN
Safe Operating Area (SOA)
–10
PNP
–5
–5
1ms
1ms
10ms
10ms
IC (A)
–1
IC (A)
–1
–0.5
–0.5
Single Pulse
Without Heatsink
Ta=25°C
Single Pulse
Without Heatsink
Ta=25°C
–0.1
–3
–5
–10 –50
VCE (V)
–100
–0.1
–3
–5
–10 –50
VCE (V)
–100
177

STA458C
PNP+NPN
H-bridge
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 50 –50 V
VCEO 30 –30 V
VEBO 6 –6 V
IC 5 –5 A
ICP 10(PW≤10ms, Du≤50%) –10(PW≤10ms, Du≤50%) A
IB 1 –1 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +50 °C
TFSM 20 (Single half-cycle sinewave) A
■Equivalent circuit diagram
2 7
R
1
4
3
8
6
9
R: 600Ω Typ
5
10
Characteristic curves
8.0
6.0
IB=150mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
(VCE=1V)
–8.0
10.0
90mA
70mA
50mA
–6.0
IB=–150mA
–90mA
–70mA
IC (A)
4.0
30mA
IC (A)
–4.0
–50mA
–30mA
IC (A)
5.0
2.0
10mA
–2.0
–10mA
Ta=150°C
75°C
25°C
–40°C
0
0
1.0 2.0
3.0
VCE (V)
0
0
–1.0 –2.0
–3.0
VCE (V)
0
0
0.5 1.0
1.5
VBE (V)
500
hFE-IC Characteristics (Typical)
NPN (VCE=1V)
PNP (VCE=–1V)
PNP
500
–10.0
(VCE=–1V)
typ
hFE
100
hFE
100
typ
IC (A)
–5.0
50
50
Ta=150°C
75°C
25°C
–40°C
20
0.02
0.5
0.1
0.5 1 5 10
IC (A)
20
–0.02 –0.05 –0.1
–0.5 –1
IC (A)
–5 –10
0
0
–0.5 –1.0 –1.5
VBE (V)
500
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=1V)
500
PNP
(VCE=–1V)
hFE
100
Ta=150°C
75°C
25°C
–40°C
hFE
100
Ta=150°C
75°C
25°C
50
50
–40°C
20
0.05
0.1
0.5 1 5 10
IC (A)
20
–0.05 –0.1
–0.5 –1
–5 –10
IC (A)
178

STA458C
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=50V –10 µA VCB=–50V
IEBO 20 mA VEB=6V –20 mA VEB=–6V
VCEO 30 V IC=25mA –30 V IC=–25mA
70 VCE=1V, IC=1A 70 VCE=–1V, IC=–1A
hFE
40 VCE=1V, IC=4A 40 VCE=–1V, IC=–4A
VCE(sat) 0.5 V IC=3A, IB=0.1A –0.5 V IC=–3A, IB=–0.1A
ton 0.3 µs VCC 12V, 0.3 µs VCC –12V,
tstg 0.5 µs IC=3A, 0.5 µs IC=–3A,
tf 0.1 µs IB1=–IB2=100mA 0.1 µs IB1=–IB2=–100mA
trr 2.0 µs IF=IR=100mA 2.0 µs IF=IR=100mA
Characteristic curves
2
NPN
VCE(sat)-IB Characteristics (Typical)
–2
PNP
20
θ j-a-PW Characteristics
10
VCE (sat)
1
IC=5A
VCE (sat) (V)
–1
θ j–a (°C / W)
5
3A
2A
IC=–5A
1.0
1A
–1A
–2A
–3A
0
0.005 0.001
0.05 0.1
0.5 1
IB (A)
0
–0.005 –0.01
–0.05 –0.1 –0.5 –1
IB (A)
0.5
1
5 10 50 100 500 1000
PW (mS)
1.5
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=20)
–1.5
(IC / IB=20)
24
20
PT-Ta Characteristics
With Silicone Grease
Natural Cooling
With Infinite Heatsink
Heatsink: Aluminum
in mm
VCE (sat) (V)
1.0
0.5
Ta=150°C
75°C
25°C
–40°C
VCE (sat) (V)
–1.0
–0.5
Ta=150°C
75°C
25°C
PT (W)
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
0
0.02 0.05 0.1
0.5 1 5 10 20
IC (A)
0
–0.02 –0.05 –0.1
–40°C
–0.5 –1 –5 –10 –20
IC (A)
0
–40 0 50 100 150
Ta (°C)
NPN
Safe Operating Area (SOA)
PNP
10
–10
1mSec
10mSec
5
–5
10mSec
1mSec
IC (A)
1
IC (A)
–1
0.5
–0.5
Single Pulse
Without Heatsink
Ta=25°C
0.2
2
5
10 30 50
VCE (V)
Single Pulse
Without Heatsink
Ta=25°C
–0.2
–2
–5
–10 –30 –50
VCE (V)
179

STA460C
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC ±6 A
ICP ±10 (PW≤1ms, Du≤50%) A
PT
3.2 (Ta=25°C)
W
18 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Ratings Unit
ICBO 10 µA VCB=50V
IEBO 10 µA VEB=6V
VCEO 50 60 70 V IC=50mA
hFE 700 1500 3000 VCE=1V, IC=1A
VCE(sat) 0.09 0.15 V IC=1.5A, IB=15mA
VFEC 1.25 1.5 V IFEC=6A
ES/B 200 mJ L=10mH, Single pulse
■Equivalent circuit diagram
3
8
2
7
4
9
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
10
5000
(VCE=1V)
5000
(VCE=1V)
IC (A)
9
8
7
6
5
4
3
2
IB=30mA
20mA
10mA
5mA
3mA
1mA
1
0
0 1 2 3 4 5
VCE (V)
hFE
typ
1000
500
100
50
30
0.01 0.05 0.1 0.5 1 5 10
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
hFE
Ta=125°C
25°C
75°C
1000
–55°C
500
100
50
30
0.01 0.05 0.1 0.5 1 5 10
IC (A)
0.75
(IC / IB=100)
0.75
6
(VCE=1V)
5
VCE (sat) (V)
0.5
0.25
Ta=–55˚C
25˚C
75˚C
125˚C
VCE (sat) (V)
0.5
0.25
0.5A
IC=3A
1.5A
IC (A)
4
3
2
1
75°C
Ta=125°C
25°C
–55°C
0
0.01 0.05 0.1 0.5 1 5 10
IC (A)
0
1 5 10 50 100 500
IB (mA)
0 0 0.5 1.0 1.5
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
20
With Silicone Grease
Natural Cooling
20
10
0.5ms
1ms
10ms
5
15
5
With Infinite Heatsink
θ j–a (°C / W)
1
0.5
PT (W)
10
IC (A)
1
0.5
0.1
0.05
0
0.1 0.5 1 5 10 50 100 500 1000 2000
–55
PW (mS)
5
Without Heatsink
0 50 100 150
Ta (°C)
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
0.5 1 5 10 50 100
VCE (V)
180

75°C
25°C
–30°C
hFE
STA471A
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 2 A
ICP 4 (PW≤1ms, Du≤25%) A
IB 0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=50V
IEBO 5 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 2000 5000 10000 VCE=4V, IC=1A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.8 2.2 V
IC=1A, IB=2mA
VFEC 1.3 1.8 V IFEC=1A
ton 0.5 µs VCC 30V,
tstg 4.0 µs IC=1A,
tf 1.0 µs IB1=–IB2=2mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 25 pF VCB=10V, f=1MHz
2
3
4
5
6
7
8
9
1
R1
R2
10
R1: 3.5kΩ typ R2: 200Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IC (A)
4
3
2
IB=10.0mA
5.0mA
2.0mA
1.0mA
0.6mA
0.4mA
hFE
10000
5000
1000
500
(VCE=4V)
Typ
10000
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
(VCE=4V)
0.3mA
1
0
0 1 2 3
VCE (V)
4 5 6
100
50
30
0.02
0.05 0.1
0.5 1
4
IC (A)
30
0.02 0.05 0.1 0.5 1 4
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
100
50
IC (A)
3
(IC / IB=1000)
3
(IC=1A)
4
(VCE=4V)
Ta=125°C
75°C
25°C
–30°C
Ta=125°C
3
VCE (sat) (V)
2
1
VCE (sat) (V)
2
1
IC (A)
2
0
0.2 0.5 1
IC (A)
3
0
0.1
0.5
IB (mA)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
1
3
1
0
0
75°C
Ta=125°C
1
25°C
–30°C
2
VBE (V)
3
θ j–a (°C / W)
30
10
5
PT (W)
24
With Infinite Heatsink
20
16
100×100×2
12
50×50×2
8.0
25×50×2
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
IC (A)
5
1
0.5
10ms
1ms
100µs
1
Without Heatsink
4.0
0.1
Single Pulse
Without Heatsink
Ta=25°C
0.5
0.2
0.5 1 5 10 50 100 500 1000
PW (mS)
0
–40 0 50 100 150
Ta (°C)
0.05 3 5 10 50 100
VCE (V)
181

1ms
STA472A
PNP Darlington
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –2 A
ICP –4 (PW≤1ms, Du≤25%) A
IB –0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–60V
IEBO –5 mA VEB=–6V
VCEO –60 V IC=–10mA
hFE 2000 4000 10000 VCE=–4V, IC=–1A
VCE(sat) –1.2 –1.5 V
VBE(sat) –1.9 –2.2 V
IC=–1A, IB=–2mA
VFEC –1.3 –1.8 V IFEC=–1A
ton 0.4 µs VCC –30V,
tstg 1.0 µs IC=–1A,
tf 0.4 µs IB1=–IB2=–2mA
fT 100 MHz VCE=12V, IE=–0.1A
Cob 30 pF VCB=10V, f=1MHz
1 R1 R2
10
2
3
4
5
6
7
8
9
R1: 4kΩ typ R2: 100Ω typ
Characteristic curves
IC (A)
–4
–3
–2
–1
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=–10.0mA
–5.0mA
–2.0mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
hFE
(VCE=–4V)
(VCE=–4V)
10000
10000
75°C
5000
typ
1000
500
100
hFE
5000
1000
500
100
Ta=125°C
25°C
–30°C
0
0
–1 –2 –3 –4 –5 –6
VCE (V)
50
–0.02
–0.05 –0.1
–0.5 –1 –4
IC (A)
50
–0.02 –0.05 –0.1 –0.5 –1 –4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(IC=–1A)
(VCE=–4V)
–3
–3
–4
Ta=125°C
75°C 25°C –30°C
–3
VCE (sat) (V)
–2
–1
75°C
25°C
Ta=–30°C
VCE (sat) (V)
–2
–1
IC (A)
–2
125°C
0
–0.2 –0.5 –1
IC (A)
–4
0
–0.1
–0.5 –1
IB (mA)
–5
–1
0
0
Ta=125°C
75°C
25°C
–30°C
–1 –2
–3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
–5
100µs
θ j–a (°C / W)
5
1
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
0.5
0
0.2 0.5 1 5 10 50 100 500 1000
–40 0 50 100 150
PW (mS)
Ta (°C)
PT (W)
IC (A)
–1
–0.5
–0.1
10ms
Single Pulse
–0.05
Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100
VCE (V)
182

STA473A
NPN Darlington
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 2 A
ICP 4 (PW≤1ms, Du≤25%) A
IB 0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 5 mA VEB=6V
VCEO 100 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.8 2.2 V
IC=1A, IB=2mA
VFEC 1.3 1.8 V IFEC=1A
ton 0.5 µs VCC 30V,
tstg 4.5 µs IC=1A,
tf 1.2 µs IB1=–IB2=2mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 20 pF VCB=10V, f=1MHz
2
3
4
5
6
7
8
9
1
R1 R2
10
R1: 4kΩ Typ R2: 150Ω Typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
4
20000
(VCE=4V)
20000
(VCE=4V)
3
IB-10.0mA
4.0mA
2.0mA
1.2mA
10000
5000
typ
10000
5000
75°C
25°C
IC (A)
2
0.6mA
0.4mA
0.3mA
hFE
1000
500
hFE
1000
500
Ta=125°C
1
100
100
–30°C
0
0
1 2 3 4 5 6
VCE (V)
50
30
0.02
0.05 0.1
0.5 1
4
IC (A)
50
30
0.02 0.05 0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
VCE (sat) (V)
3
2
1
0
0.2 0.5 1
IC (A)
Ta=125°C
(IC / IB=1000)
75°C
25°C
–30°C
4
VCE (sat) (V)
3
2
1
0
0.1
Ta=125°C
75°C
25°C
–30°C
0.5 1
IB (mA)
(IC=1A)
5
IC (A)
4
3
2
1
0
0
75°C
25°C
Ta=125°C
–30°C
(VCE=4V)
1 2
3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
5
10ms
1ms
100µs
θ j–a (°C / W)
5
1
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
0.5
0
0.2 0.5 1 5 10 50 100 500 1000
–40 0 50 100 150
PW (mS)
Ta (°C)
PT (W)
IC (A)
1
0.5
0.1
Single Pulse
0.05
Without Heatsink
0.03
Ta=25°C
3 5 10 50 100
VCE (V)
200
183

STA475A
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 100±15 V
VCEO 100±15 V
VEBO 6 V
IC 2 A
ICP 4 (PW≤1ms, Du≤25%) A
IB 0.5 A
PT
4 (Ta=25°C)
W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=85V
IEBO 5 mA VEB=6V
VCEO 85 100 115 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.5 V
VBE(sat) 2.2 V
IC=1A, IB=2mA
VFEC 1.8 V IFEC=1A
ton 0.6 µs VCC 30V,
tstg 3.0 µs IC=1A,
tf 1.0 µs IB1=–IB2=2mA
■Equivalent circuit diagram
2
3
4
5
6
7
8
9
1
R1
R2
10
R1: 4kΩ typ R2: 150Ω typ
Characteristic curves
4
3
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=10mA
5mA
2mA
1mA
(VCE=4V)
(VCE=4V)
20000
20000
10000
10000
Typ
5000
5000
IC (A)
2
0.5mA
0.3mA
hFE
1000
500
hFE
1000
500
75°C
25°C
Ta=125°C
–30°C
1
0.2mA
100
100
0
0 1 2 3 4 5 6
VCE (V)
3
(IC / IB=1000)
50
0.03 0.05
3
0.1 0.5 1 4
50
0.03 0.05
4
0.1 0.5 1 4
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
IC (A)
(VCE=4V)
3
VCE (sat) (V)
2
1
Ta=–30°C
125˚C
25°C
75°C
VCE (sat) (V)
2
1
IC=2A
IC=1A
IC=4A
IC (A)
2
1
75°C
Ta=125°C
25°C
–30°C
0
0.3
0.5 1 4
IC (A)
0
0.1
0.5 1 5 10 50 100
IB (mA)
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
24
20
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
5
10ms
1ms
100µs
50µs
θ j–a (°C / W)
5
16
100×100×2
12
50×50×2
8.0
25×50×2
Without Heatsink
4.0
1
0
1 5 10 50 100 500 1000
–40 0 50 100 150
PW (mS)
Ta (°C)
PT (W)
IC (A)
1
0.5
0.1
Single Pulse
0.05
Without Heatsink
Ta=25°C
0.03
3 5 10
VCE (V)
50 100 200
184

STA481A
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 1 A
ICP 2.5 (PW≤1ms, Du≤25%) A
IB 0.5 A
PT
4 (Ta=25°C)
W
16 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=50V
IEBO 3 mA VEB=6V
VCEO 50 60 70 V IC=1mA
hFE 2000 5000 10000 VCE=4V, IC=0.5A
VCE(sat) 1.0 1.5 V
VBE(sat) 1.6 2.2 V
IC=0.5A, IB=1mA
VFEC 1.4 1.8 V IFEC=0.5A
ton 0.5 µs VCC 30V,
tstg 2.5 µs IC=0.5A,
tf 1.0 µs IB1=–IB2=1mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 14 pF VCB=10V, f=1MHz
2
3
4
5
6
7
8
9
1
R1
R2
10
R1: 6kΩ typ R2: 400Ω typ
Characteristic curves
IC (A)
2.5
2
1.5
1
0.5
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=50mA
10mA
5mA
2mA
1mA
0.5mA
0.3mA
hFE
10000
1000
100
(VCE=4V)
10000
(VCE=4V)
typ
hFE
1000
100
125°C
75°C
25°C
–30°C
0
0 1 2 3 4 5 6
VCE (V)
30
0.01 0.1 1 2.5
IC (A)
30
0.01 0.1 1
IC (A)
2.5
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IB=2mA)
(IC=0.5A)
(VCE=4V)
3
3
2.5
2
VCE (sat) (V)
2
1
25°C
–30°C
VCE (sat) (V)
2
1
25°C
–30°C
IC (A)
1.5
1
125°C
75°C
0
0.01 0.1 1 5
IC (A)
125°C
75°C
0
0.05 0.1 1 10
100
IB (mA)
0.5
125°C
75°C
25°C
–30°C
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
30
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
5
100µS
10
15
1
1mS
θ j–a (°C / W)
5
PT (W)
10
With Infinite Heatsink
IC (A)
0.1
10mS
5
Without Heatsink
1
1
10 100
PW (mS)
1000
0
–40 0 50 100 150
Ta (°C)
Single Pulse
Without Heatsink
Ta=25°C
0.01
1 10 100
VCE (V)
185

STA485A
NPN Darlington
With built-in avalanche diode
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 100±15 V
VCEO 100±15 V
VEBO 6 V
IC 1 A
ICP 2.5 (PW≤1ms, Du≤25%) A
IB 0.5 A
PT
4 (Ta=25°C)
W
16 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
ymbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=85V
IEBO 3 mA VEB=6V
VCEO 85 100 115 V IC=1mA
hFE 2000 5000 10000 VCE=4V, IC=0.5A
VCE(sat) 1.0 1.5 V
VBE(sat) 1.6 2.2 V
IC=0.5A, IB=1mA
VFEC 1.4 1.8 V IFEC=0.5A
ton 0.5 µs VCC 30V,
tstg 2.5 µs IC=0.5A,
tf 1.0 µs IB1=–IB2=1mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 14 pF VCE=10V, f=1MHz
2
3
4
5
6
7
8
9
1
R1
R2
10
R1: 5kΩ typ R2: 400Ω typ
Characteristic curves
2.5
2
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=5mA
2mA
1mA
0.5mA
(VCE=4V)
(VCE=4V)
10000
20000
10000
5000
typ
IC (A)
1.5
1
0.5
0.3mA
0.2mA
hFE
1000
500
100
50
hFE
1000
100
125°C
75°C
25°C
–30°C
0
0 1 2 3 4 5 6
VCE (V)
20
0.01 0.1 1 2.5
IC (A)
30
0.01 0.1 1 2.5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IB=2mA)
(IC=0.5A)
(VCE=4V)
3
3
2.5
125°C
75°C
25°C
2
VCE (sat) (V)
2
1
25°C –30°C
VCE (sat) (V)
2
1
–30°C
IC (A)
1.5
1
125°C
75°C
0
0.01 0.1 1 5
IC (A)
0
0.05 0.1 1 10
100
IB (mA)
0.5
125°C
75°C
25°C
–30°C
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
30
20
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
5
100µS
15
1
10mS
θ j–a (°C / W)
10
5
PT (W)
10
With Infinite Heatsink
IC (A)
0.1
1mS
5
Without Heatsink
2
1
5
10
50 100
PW (mS)
500
1000
0
–40 0 50 100 150
Ta (°C)
Single Pulse
Without Heatsink
Ta=25°C
0.01
1 10 100 200
VCE (V)
186

STA501A
N-channel
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±10 V
ID ±5 A
ID(pulse) ±20 (PW≤100µs, Du≤1%) A
4 (Ta=25°C) W
PT
20 (Tc=25°C) W
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
3 5 7 9
2 4 6 8
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 2.0 S VDS=10V, ID=2.5A
0.15 0.20 Ω VGS=10V, ID=2.5A
RDS(ON)
0.23 0.28 Ω VGS=4V, ID=2.5A
Ciss 400 pF VDS=25V,
Coss 160 pF f=1.0MHz,
Crss 35 pF VGS=0V
td(on) 20 ns ID=2.5A,
tr 25 ns VDD 30V,
td(off) 40 ns RL=12Ω,
tf 20 ns VGS=5V, see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=5A, VGS=0V
trr 150 ns ISD=±100mA
1
10
Characteristic curves
187

STA504A
N-channel
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±20 V
ID ±4 A
ID(pulse) ±8 (PW≤100µs, Du≤1%) A
4 (Ta=25°C) W
PT
20 (Tc=25°C) W
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 1.2 S VDS=10V, ID=2A
RDS(ON) 0.33 0.45 Ω VGS=10V, ID=2A
Ciss 120 pF VDS=25V,
Coss 60 pF f=1.0MHz,
Crss 14 pF VGS=0V
VSD 1.1 1.5 V ISD=4A, VGS=0V
trr 100 ns ISD=±100mA
3
5
7
9
2
4
6
8
1
10
Characteristic curves
188

STA505A
N-channel
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±3 A
ID(pulse) ±12 (PW≤100µs, Du≤1%) A
4 (Ta=25°C) W
PT
20 (Tc=25°C) W
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
3 5 7 9
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 2.0 3.0 S VDS=10V, ID=1.5A
RDS(ON)
0.35 0.50 Ω VGS=10V, ID=1.5A
0.40 0.60 Ω VGS=4V, ID=1.5A
Ciss 240 pF VDS=25V,
Coss 60 pF f=1.0MHz,
Crss 12 pF VGS=0V
VSD 1.0 1.5 V ISD=3A, VGS=0V
trr 150 ns ISD=±100mA
2
4
6
8
1
10
Characteristic curves
189

STA506A
N-channel
General purpose
External dimensions D • • • STA (10-pin)
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±2 A
ID(pulse) ±5 (PW≤100µs, Du≤1%) A
EAS* 5.6 mJ
4 (Ta=25°C) W
PT
20 (Tc=25°C) W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=2.2mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
3
5 7 9
2 4
6 8
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 1.5 2.0 S VDS=10V, ID=1A
0.55 0.80 Ω VGS=10V, ID=1A
RDS(ON)
0.70 0.95 Ω VGS=4V, ID=1A
Ciss 150 pF VDS=25V,
Coss 45 pF f=1.0MHz,
Crss 9 pF VGS=0V
td(on) 15 ns ID=1A,
tr 30 ns VDD 50V,
td(off) 40 ns RL=50Ω,
tf 30 ns VGS=5V, see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=2A, VGS=0V
trr 160 ns ISD=±100mA
1 10
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
5
5
0.8
10V 5V
TC=–40°C
VGS=4V
4V
4
4
VGS=10V
0.6
ID (A)
3
2
3.5V
ID (A)
3
2
25°C
125°C
RDS (ON) (Ω)
0.4
1
VGS=3V
1
0.2
0
0 2 4 6 8 10
VDS (V)
5
(VDS=10V)
0
0 2 4
6
VGS (V)
1.5
(ID=1A)
0
0
1 2 3
ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
500
4 5
VGS=0V
f=1MHz
TC=–40°C
25°C
Ciss
Re (yfs) (S)
1
125°C
RDS (ON) (Ω)
1.0
0.5
VGS=4V
VGS=10V
Capacitance (pF)
100
50
Coss
0.5
10
0.3
0.05
0.1 0.5 1
ID (A)
5
0
–40
0 50 100 150
TC (°C)
Crss
5
0 10 20 30 40 50
VDS (V)
IDR-VSD Characteristics (Typical) PT-Ta Characteristics Safe Operating Area (SOA)
5
10
30
IDR (A)
4
3
2
4V
10V
I D (A)
5
1
0.5
I D (pulse) max
DS (ON)
R LIMITED
10 ms (1shot)
1ms
100µs
PT (W)
25
20
15
10
With Infinite Heatsink
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
1
VGS=0V
5
Without Heatsink
190
0
0 0.5 1.0 1.5
VSD (V)
0.1
0.5 1 5 10 50 100
V DS (V)
0
0 50 100 150
Ta (°C)

SDA01
PNP Darlington
General purpose
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –1.5 A
ICP –2.5 (PW≤1ms, Du≤10%) A
IB –0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–60V
IEBO –3 mA VEB=–6V
VCEO –60 V IC=–10mA
hFE 2000 12000 VCE=–4V, IC=–1A
VCE(sat) –1.4 V
VBE(sat) –2.2 V
IC=–1A, IB=–2mA
R1
R2
2 4 6 8
1
3 5 7
15,16 13,14 11,12 9,10
R1: 4kΩ typ R2: 100Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–2.5
–2.0
IB=–5mA
–2mA
–1.2mA
–1.0mA
–0.8mA
10000
5000
(VCE=–4V)
typ
10000
5000
(VCE=–4V)
IC (A)
–1.5
–1.0
–0.6mA
–0.5mA
–0.4mA
hFE
1000
500
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
–0.3mA
–0.5
100
100
0
0
–1
–2 –3
VCE (V)
–4
–5
–6
50
–0.03 –0.05 –0.1 –0.5 –1 –2.5
IC (A)
50
–0.03 –0.05 –0.1 –0.5 –1 –2.5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
–3
(IC / IB=1000)
–3
–2.5
(VCE=–4V)
–2.0
VCE (sat) (V)
–2
–1
25°C
–30°C
Ta=125°C
VCE (sat) (V)
–2
–1
IC=–1A
IC=–0.5A
IC=–2A
IC (A)
–1.5
–1.0
Ta=125°C
75°C
25°C
–30°C
75°C
–0.5
0
–0.2 –0.5 –1 –2.5
IC (A)
0
–0.1 –0.5 –1 –5 –10 –50
IB (mA)
0
0 –1 –2 –3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
3
4
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
–5
100µs
1ms
θ j–a (°C / W)
10
5
PT (W)
2
1
1
IC (A)
–1
–0.5
10ms
Single Pulse
–0.1 Without Heatsink
Ta=25°C
1
1 5 10 50 100 500 1000
PW (mS)
0
0
50 100 150
Ta (°C)
–0.05
–3 –5 –10 –50 –100
VCE (V)
191

SDA05
PNP Darlington
3-phase motor drive
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –4 A
ICP –6 (PW≤1ms, Du≤50%) A
IB –0.5 A
PT 2.6 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
2
4
8
R1 R2
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO –10 µA VCB=–60V
IEBO –10 mA VEB=–6V
VCEO –60 V IC=–10mA
hFE 2000 12000 VCE=–4V, IC=–3A
VCE(sat) –1.5 V
VBE(sat) –2.0 V
IC=–3A, IB=–6mA
VFEC 1.8 V IFEC=1A
ton 0.4 µs VCC –30V,
tstg 0.8 µs IC=–3A,
tf 0.6 µs IB1=–IB2=–10mA
fT 200 MHz VCE=–12V, IE=0.2A
Cob 75 pF VCB=–10V, f=1MHz
1
15,16
3
13,14
7
9,10
R1: 2kΩ typ R2: 150Ω typ *Pins 5, 6, 11, 12 : NC
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–6
IB=–2.2mA
–1.8mA
–1.5mA
–1.2mA
10000
5000
(VCE=–4V)
typ
10000
5000
(VCE=–4V)
IC (A)
–4
–1.0mA
–0.9mA
–0.8mA
hFE
1000
500
hFE
1000
500
Ta=125°C
–30°C
–2
75°C
100
100
25°C
0
50
50
0 –2 –4 –6
–0.03 –0.05 –0.1
–0.03 –0.05 –0.1 –0.5 –1 –5 –6
–0.5 –1 –5 –6
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
–3
(IC / IB=1000)
(VCE=–4V)
–3
–6
–5
VCE (sat) (V)
–2
–1
Ta=–30°C
125°C
25°C
75°C
VCE (sat) (V)
–2
–1
IC=–1A
IC=–2A
IC=–4A
IC (A)
–4
–3
–2
–1
Ta=125°C
–30°C
75°C
25°C
0
–0.5
0
0
–1
IC (A)
–5 –6
–0.3 –0.5 –1 –5 –10 –50 –100 –200
0
–1 –2 –3
VBE (V)
IB (mA)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
20
10
3
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
–10
–5
10ms
1ms
θ j–a (°C / W)
5
PT (W)
2
1
1
IC (A)
–1
–0.5
1
–0.1
0.5
1 5 10 50 100 500 1000
PW (mS)
0
0 50 100 150
Ta (°C)
Single Pulse
–0.05 Without Heatsink
Ta=25°C
–0.03
–3 –5 –10 –50 –100
VCE (V)
192

SDC01
NPN
General purpose
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 80 V
VCEO 50 V
VEBO 6 V
IC 2 A
ICP 3 (PW≤1ms, Du≤10%) A
IB 0.5 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=80V
ICES 100 µA VCES=50V
IEBO 10 µA VEB=6V
VCEO 50 V IC=10mA
hFE 500 2000 VCE=4V, IC=0.5A
VCE(sat) 0.4 V
VBE(sat) 1.1 V
IC=0.5A, IB=5mA
fT 40 MHz VCE=12V, IE=–0.1A
■Equivalent circuit diagram
15,16
13,14
11,12
9,10
1 3 5 7
2
4
6
8
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IC (A)
IB=100mA
1.8
1.6
1.4
1.2
1.0
0.8
30mA
10mA
5mA
3mA
2mA
1mA
hFE
2000
1000
500
(VCE=4V)
hFE
2000
1000
500
25°C
–30°C
Ta=125°C
75°C
(VCE=4V)
0.6
0.4
0.2
100
100
0
0 1 2 3 4 5 6
VCE (V)
1.5
(IC / IB=500)
50
0.01 0.1 1 3
IC (A)
1.5
(IC=0.5A)
50
0.01 0.1 1 3
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
1.8
1.6
1.4
(VCE=4V)
VCE (sat) (V)
1.0
0.5
Ta=125°C
75°C
25°C
–30°C
VCE (sat) (V)
1.0
0.5
Ta=125°C
75°C
25°C
–30°C
IC (A)
1.2
1.0
0.8
0.6
0.4
Ta=125°C
75°C
25°C
–30°C
0.2
0
0.05 0.1 0.5 1
IC (A)
0
0.5 1 10 100
IB (mA)
0
0 0.5 1.0 1.5
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
3
4
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
5
100µs
1ms
θ j–a (°C / W)
10
PT (W)
2
1
1
IC (A)
1
10ms
1
0.1
Single Pulse
Without Heatsink
Ta=25°C
0.5
0.1 1 10 100 1000
PW (mS)
0
0
50 100 150
Ta (°C)
0.05
1
10
VCE (V)
100
193

SDC03
NPN Darlington
With built-in avalanche diode
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6 V
IC 1.5 A
ICP 2.5 (PW≤1ms, Du≤10%) A
IB 0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=50V
IEBO 1.1 3.5 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.2 1.4 V
VBE(sat) 1.8 2.2 V
IC=1A, IB=2mA
VFEC 1.3 1.8 V IFEC=1A
ton 0.5 µs VCC 30V,
tstg 4.0 µs IC=1A,
tf 1.0 µs IB1=–IB2=2mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 25 pF VCB=10V, f=1MHz
15,16
13,14
11,12
9,10
1
3
5
7
R1
R2
2
4
6
8
R1: 3.5kΩ typ R2: 200Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IC (A)
2.5
2.0
1.5
1.0
IB=10mA
2mA
1mA
0.6mA
0.4mA
0.3mA
hFE
10000
5000
1000
500
(VCE=4V)
typ
hFE
10000
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
(VCE=4V)
0.5
100
100
0
0 1 2 3 4 5 6
VCE (V)
50
0.03 0.05 0.1 0.5 1 2.5
IC (A)
50
0.03 0.05 0.1 0.5 1 2.5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
3
(IC / IB=1000)
3
2.5
(VCE=4V)
2.0
VCE (sat) (V)
2
1
Ta=125°C
75°C
25°C
–30°C
VCE (sat) (A)
2
1
1A
0.5A
IC=2A
IC (A)
1.5
1.0
75°C
Ta=125°C
25°C
–30°C
0.5
0
0.2 0.5 1 2.5
IC (A)
0
0.1 0.5 1 5 10 50 100
IB (mA)
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
3
4
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
5
1mS
100µS
10mS
θ j–a (°C / W)
10
5
PT (W)
2
1
IC (A)
1
0.5
1
Single Pulse
0.1 Without Heatsink
Ta=25°C
1
1
5
10 50 100
PW (mS)
500 1000
0
0
50 100 150
Ta (°C)
0.05
3 5 10 50 100
VCE (V)
194

SDC04
NPN Darlington
With built-in avalanche diode
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 100±15 V
VCEO 100±15 V
VEBO 6 V
IC 1.5 A
ICP 2.5 (PW≤1ms, Du≤10%) A
IB 0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
■Equivalent circuit diagram
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=85V
IEBO 1 3 mA VEB=6V
VCEO 85 100 115 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.0 1.3 V
VBE(sat) 1.7 2.2 V
IC=1A, IB=2mA
VFEC 1.2 1.8 V IFEC=1A
ton 0.6 µs VCC 30V,
tstg 3.0 µs IC=1A,
tf 1.0 µs IB1=–IB2=2mA
fT 30 MHz VCE=12V, IE=–0.1A
Cob 20 pF VCB=10V, f=1MHz
15,16
13,14
11,12
9,10
1
3
5
7
R1
R2
2
4
6
8
R1: 4kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IC (A)
2.5
2.0
1.5
1.0
IB=5mA
1mA
0.5mA
0.3mA
0.2mA
hFE
20000
10000
5000
1000
500
(VCE=4V)
typ
hFE
20000
10000
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
(VCE=4V)
0.5
100
100
0
0 1 2 3 4 5 6
VCE (V)
50
0.03 0.05 0.1 0.5 1 2.5
IC (A)
50
0.03 0.05 0.1 0.5 1 2.5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
2
(IC / IB=1000)
3
2.5
(VCE=4V)
2.0
VCE (sat) (V)
1
Ta=125°C
75°C
25°C
–30°C
VCE (sat) (V)
2
1
IC-1A
IC=2A
IC=4A
IC (A)
1.5
1.0
0.5
75°C
Ta=125°C
25°C
–30°C
0
0.3 0.5 1 2.5
IC (A)
0
0.1 0.5 1 5 10 50 100
IB (mA)
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
θ j–a (°C / W)
50
10
5
PT (W)
3
4
3
2
2
1
1
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
IC (A)
5
1
0.5
10ms
1ms
100µs
0.1
1
1 5 10 50 100 500 1000
PW (mS)
0
0
50 100 150
Ta (°C)
Single Pulse
0.05
Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
195

SDC06
NPN
With built-in avalanche diode
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 30 to 45 V
VCEO 30 to 45 V
VEBO 6 V
IC 2 A
ICP 3 (PW≤1ms, Du≤10%) A
IB 30 mA
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
■Equivalent circuit diagram
15,16
13,14
11,12
9,10
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=30V
IEBO 1.2 2.8 mA VEB=6V
VCEO 30 45 V IC=10mA
hFE 400 700 2000 VCE=4V, IC=0.5A
VCE(sat)
0.2 V IC=0.5A, IB=5mA
0.6 V IC=1A, IB=5mA
VFEC 2.0 V IFEC=1A
ton 1.2 µs VCC 10V,
tstg 18.0 µs IC=0.5A,
tf 3.6 µs IB1=5mA, IB2=0A
fT 20 MHz VCE=12V, IE=–0.2A
Cob 50 pF VCB=10V, f=1MHz
ES/B 40 mJ L=10mH, Single pulse
1
RB
3
RB
5
RB
7
RB
RBE
RBE
RBE
RBE
2
4
6
8
RB: 800Ω typ
RBE: 2kΩ typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
3
IB=30mA
12mA
8mA
1000
typ
(VCE=4V)
1000
(VCE=4V)
2
5mA
500
500
Ta=125°C
IC (A)
3mA
2mA
hFE
hFE
75°C
25°C
1
1mA
–30°C
0
0 1 2 3 4 5 6
VCE (V)
100
0.03 0.05 0.1 0.5 1 3
IC (A)
100
0.03 0.05 0.1 0.5 1 3
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=100)
3
1
VCE (sat) (V)
2
1
75°C
Ta=125°C
25°C
VCE (sat) (V)
IC=1A
–30°C
0
0.2 0.5 1 3
IC (A)
IC=0.5A
0
1 5 10 30
IB (mA)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
3
4
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
5
1mS
θ j–a (°C / W)
10
5
PT (W)
2
1
1
IC (A)
1
0.5
1
1 5 10 50 100 500 1000
PW (mS)
0
0
50 100 150
Ta (°C)
Single Pulse
Without Heatsink
Ta=25°C
0.1
5 10 50
VCE (V)
196

SDC07
NPN Darlington
3-phase motor drive
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 60 V
VCEO 60 V
VEBO 6 V
IC 4 A
ICP 6 (PW≤1ms, Du≤50%) A
IB 0.5 A
PT 2.6 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
15,16 13,14 9,10
1
3
7
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=60V
IEBO 10 mA VEB=6V
VCEO 60 V IC=10mA
hFE 2000 12000 VCE=4V, IC=3A
VCE(sat) 1.5 V
VBE(sat) 2.0 V
IC=3A, IB=6mA
VFEC 1.8 V IFEC=1A
ton 1.0 µs VCC 30V,
tstg 4.0 µs IC=3A,
tf 1.5 µs IB1=–IB2=10mA
fT 75 MHz VCE=12V, IE=–0.1A
Cob 50 pF VCB=10V, f=1MHz
R1
R2
2
4
8
R1: 3kΩ typ R2: 200Ω typ *Pins 5, 6, 11, 12 : NC
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
6
IB=4.0mA
2.0mA
20000
10000
(VCE=4V)
20000
10000
(VCE=4V)
1.2mA
5000
Typ
5000
IC (A)
4
2
0.8mA
0.6mA
0.5mA
0.4mA
hFE
1000
500
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
100
100
0
0 2 4 6
50
0.03 0.05 0.1 0.5 1 5 6
50
0.03 0.05 0.1 0.5 1 5 6
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=4V)
3
3
6
75°C
25°C
5
VCE (sat) (V)
2
1
Ta=125°C
–30°C
VCE (sat) (V)
2
1
IC=2A
IC=1A
IC=4A
IC (A)
4
3
2
1
75°C
Ta=125°C
25°C
–30°C
0
0.5 1 5 6
0
0.2
0.5 1 5 10 50 100 200
IC (A)
IB (mA)
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
0
0
1 2 3
20
10
3
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
10
5
10ms
1ms
θ j–a (°C / W)
5
PT (W)
2
1
1
IC (A)
1
0.5
1
0.5
1 5 10 50 100 500 1000
PW (mS)
0
0 50 100 150
Ta (°C)
0.1
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
197

SDH02
NPN Darlington
With built-in flywheel diode
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6 V
IC 1.5 A
ICP 2.5 (PW≤1ms, Du≤10%) A
IB 0.2 A
IF 1.5 A
IFSM 2.5 (PW≤0.5ms, Du≤10%) A
VR 120 V
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
16 15 14 13 12 11 10 9
1
3
5
7
R1 R2
2
4
6
8
R1: 2.5kΩ typ R2: 200Ω typ
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
ICBO 10 µA VCB=120V
IEBO 3 mA VEB=6V
VCEO 100 V IC=10mA
hFE 2000 6000 12000 VCE=4V, IC=1A
VCE(sat) 1.1 1.3 V
VBE(sat) 1.7 2.2 V
IC=1A, IB=2mA
ton 0.5 µs VCC 30V,
tstg 4.5 µs IC=1A,
tf 1.2 µs IB1=–IB2=2mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 20 pF VCB=10V, f=1MHz
●Diode for flyback voltage absorption
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.6 V IF=1A
IR 10 µA VR=120V
trr 100 ns IF=±100mA
Characteristic curves
IC (A)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
2.5
IB=10mA
2.0
1.5
1.0
4mA
2mA
1.2mA
0.6mA
0.4mA
0.3mA
hFE
(VCE=4V)
10000
typ
5000
1000
500
hFE
(VCE=4V)
10000
5000
1000
500
Ta=125°C
75°C
25°C
–30°C
0.5
0
1 2 3 4 5 6
VCE (V)
100
0.03 0.05 0.1 0.5 1 2.5
IC (A)
100
0.03 0.05 0.1 0.5 1 2.5
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=4V)
3
3
2.5
2.0
VCE (sat) (V)
2
1
25°C
–30°C
Ta=125°C
VCE (sat) (V)
2
1
IC=1A
IC=0.5A
IC=2A
IC (A)
1.5
1.0
75°C
Ta=125°C
25°C
–30°C
75°C
0.5
0
0.2 0.5 1 2.5
IC (A)
0
0.1 0.5 1 5 10 50 100
IB (mA)
0
0 1 2 3
VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
3
4
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
5
100µs
1ms
2
1
10ms
θ j–a (°C / W)
10
5
PT (W)
1
1
IC (A)
0.5
0.1
1
1 5 10 50 100 500 1000
PW (mS)
0
0
50 100 150
Ta (°C)
Single Pulse
0.05 Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
198

SDH03
PNP + NPN Darlington
H-bridge
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
NPN
PNP
Unit
VCBO 100 –60 V
VCEO 100 –60 V
VEBO 6 –6 V
IC 1.5 –1.5 A
ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW≤1ms, Du≤10%) A
IB 0.1 –0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
■Equivalent circuit diagram
2 6
R3 R4
1 5
15 16 11 12
13 14 9 10
3 7
R1 R2
4 8
R3: 4kΩ typ
R4: 100Ω typ
R1: 4kΩ typ
R2: 200Ω typ
Characteristic curves
IC (A)
2.5
2.0
1.5
1.0
0.5
IB=10mA
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
4mA
2mA
1.2mA
0.6mA
0.4mA
0.3mA
IC (A)
–2.5
–2.0
–1.5
–1.0
–0.5
IB=–5mA
–2mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
IC (A)
2.5
2.0
1.5
1.0
0.5
75°C
Ta=125°C
25°C
–30°C
(VCE=4V)
0
1 2 3 4 5 6
VCE (V)
0
0
–1
–2
–3 –4
VCE (V)
–5
–6
0
0 1 2 3
VBE (V)
10000
hFE-IC Characteristics (Typical)
NPN PNP PNP
(VCE=4V)
(VCE=–4V)
10000
–2.5
(VCE=–4V)
5000
typ
5000
Typ
–2.0
hFE
1000
500
hFE
1000
500
IC (A)
–1.5
–1.0
Ta=125°C
75°C
25°C
–30°C
100
–0.5
100
0.03 0.05 0.1 0.5 1 2.5
IC (A)
50
30
–0.03 –0.05 –0.1 –0.5 –1 –2.5
IC (A)
0
0 –1 –2 –3
VBE (V)
10000
NPN
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10000
PNP
(VCE=–4V)
5000
5000
hFE
1000
Ta=125°C
75°C
25°C
–30°C
hFE
1000
500
Ta=125°C
75°C
25°C
–30°C
500
100
200
100
0.03 0.05 0.1 0.5 1 2.5
IC (A)
50
–0.03 –0.05 –0.1 –0.5 –1 –2.5
IC (A)

SDH03
Electrical characteristics
(Ta=25°C)
NPN
PNP
Symbol Specification
Specification
Unit Conditions
min typ max min typ max
Unit Conditions
ICBO 10 µA VCB=100V –10 µA VCB=–60V
IEBO 3 mA VEB=6V –3 mA VEB=–6V
VCEO 100 V IC=10mA –60 V IC=–10mA
hFE 2000 12000 VCE=4V, IC=1A 2000 12000 VCE=–4V, IC=–1A
VCE(sat) 1.3 V
–1.4 V
IC=1A, IB=2mA
VBE(sat) 2.2 V –2.2 V
IC=–1A, IB=–2mA
Characteristic curves
3
NPN
VCE(sat)-IB Characteristics (Typical)
–3
PNP
50
θ j-a-PW Characteristics
NPN
VCE (sat) (V)
2
1
IC=1A
IC=0.5A
IC=2A
VCE (sat) (V)
–2
–1
IC=–1A
IC=–0.5A
IC=–2A
θ j–a (°C / W)
10
5
0 0
0.1 0.5 1 5 10 50 100
–0.1 –0.5 –1 –5 –10 –50
IB (mA)
IB (mA)
VCE(sat)-IC Temperature Characteristics (Typical)
NPN
PNP
(IC / IB=1000)
(IC / IB=1000)
3
–3
1
1 5 10 50 100 500 1000
PW (mS)
PNP
50
VCE (sat) (V)
2
1
25°C
–30°C
Ta=125°C
75°C
VCE (sat) (V)
–2
–1
75°C
125°C
25°C
Ta=–30°C
θ j–a (°C / W)
10
5
0
0.2 0.5 1 2.5
IC (A)
0
–0.2 –0.5 –1 –2.5
IC (A)
1
1 5 10 50 100 500 1000
PW (mS)
NPN
Safe Operating Area (SOA)
PNP
PT-Ta Characteristics
5
100µs
–5
100µs
3
4
3
2
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
1
1ms
–1
1ms
2
10ms
10 ms
IC (A)
0.5
IC (A)
–0.5
PT (W)
1
1
0.1
Single Pulse
0.05
Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
Single Pulse
–0.1 Without Heatsink
Ta=25°C
–0.05
–3 –5 –10 –50 –100
VCE (V)
0
0
50 100 150
Ta (°C)
201

SDK02
N-channel
With built-in flywheel diode
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±10 V
ID ±2 A
ID(pulse) ±3 (PW≤100µs, Du≤1%) A
IF 1.5 A
IFSM 2.5 (PW≤0.5ms, Du≤10%) A
VR 120 V
PT 3 (Ta=25°C, 4-circuit operation) W
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
16 15 14 13 12 11 10 9
1 3 5 7
2 4 6 8
Electrical characteristics
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250 µA VDS=60V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 1.2 S VDS=10V, ID=1.0A
0.19 0.24 Ω VGS=10V, ID=1.0A
RDS(ON)
0.25 0.30 Ω VGS=4V, ID=1.0A
Ciss 400 pF VDS=25V,
Coss 160 pF f=1.0MHz,
Crss 35 pF VGS=0V
VSD 1.0 1.5 V ISD=2A, VGS=0V
trr 150 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol
Specification
min typ max
Unit Conditions
VR 120 V IR=10µA
VF 1.6 V IF=1A
IR 100 µA VR=120V
trr 100 ns IF=±100mA
Characteristic curves
202

SDK04
N-channel
General purpose
External dimensions E • • • SD
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 100 V
VGSS ±20 V
ID ±2 A
ID(pulse) ±5 (PW≤100µs, Du≤1%) A
EAS* 2.7 mJ
PT 3 (Ta=25°C, 4-circuit operation) W
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=1mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
15,16 13,14 11,12 9,10
1 3 5 7
(Ta=25°C)
Symbol
Specification
min typ max
Unit Conditions
V(BR)DSS 100 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V
IDSS 100 µA VDS=100V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 1.5 S VDS=10V, ID=1.0A
0.60 0.80 Ω VGS=10V, ID=1.0A
RDS(ON)
0.75 0.95 Ω VGS=4V, ID=1.0A
Ciss 160 pF VDS=25V,
Coss 40 pF f=1.0MHz,
Crss 10 pF VGS=0V
td(on) 7 ns ID=1A, VDD 50V,
tr 20 ns RL=50Ω,
td(off) 35 ns VGS=10V,
tf 30 ns see Fig. 3 on page 16.
VSD 1.0 1.5 V ISD=2A, VGS=0V
trr 140 ns ISD=±100mA
2
4
6
8
Characteristic curves
203

Sanken Electric Co., Ltd.
1-11-1 Nishi -Ikebukuro,Toshima-ku, Tokyo
PHONE: 03-3986-6164
FAX: 03-3986-8637
TELEX: 0272-2323(SANKEN J)
Overseas Sales Offices
●Asia
Sanken Electric Singapore Pte.Ltd.
150 Beach Road,#14-03 The Gateway West,
Singapore 0718
PHONE: 291-4755
FAX: 297-1744
Sanken Electric Hong Kong Co.,Ltd.
1018 Ocean Centre, Canton Road,
Kowloon, Hong Kong
PHONE: 2735-5262
FAX: 2735-5494
TELEX: 45498 (SANKEN HX)
Sanken Electric Korea Co.,Ltd.
SK Life B/D 6F,
168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
PHONE: 82-2-714-3700
FAX: 82-2-3272-2145
●North America
Allegro MicroSystems,Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615, U.S.A.
PHONE: (508)853-5000
FAX: (508)853-7861
●Europe
Allegro MicroSystems Europe Limited.
Balfour House, Churchfield Road,
Walton-on-Thames, Surrey KT12 2TD, U.K.
PHONE: 01932-253355
FAX: 01932-246622
PRINTED in JAPAN H1-T07EB0-0103020ND