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Dr. Abdul Ahad

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An Overview of 5MV<br />

Pelletron Accelerator at<br />

NCP<br />

<strong>Dr</strong>. <strong>Abdul</strong> <strong>Ahad</strong>


Contents<br />

• Electrostatic Accelerators<br />

• 5UDH-2 Pelletron at NCP<br />

– introduction<br />

– Control System<br />

– Ion Sources<br />

– RC43 Setup<br />

– RS61 Setup<br />

• Applications (Ion Beam Analysis)


Electrostatic Accelerators<br />

• True DC<br />

• Low Energy Spread<br />

• Current<br />

• All Masses<br />

100% duty cycle<br />

100e V to few KeV<br />

(1 MeV to 100’s s MeV)<br />

nano to micro amp<br />

(Mass independent)<br />

3


Electrostatic Accelerators<br />

Single Ended<br />

• Higher Currents<br />

• Ne, Ar, Xe<br />

• Less energy spread (microprobes)


Electrostatic Accelerators<br />

Tandem<br />

• Source, etc. outside accelerator tank<br />

• No molecular interferences - He++ vs. H2+<br />

• Flexibility – Multiple sources<br />

• Easy to upgrade<br />

• Higher E for Vt, especially for heavy ions<br />

THE NCP 5UDH-2 IS A TANDEM


Electrostatic Accelerators<br />

Belt Charging system<br />

Current transported by belt<br />

Characteristics of Ideal Belt<br />

- high resistivity<br />

- little stretch<br />

- moisture resistant<br />

- smooth surface<br />

- sufficient mechanical strength<br />

• Dust Generation


Electrostatic Accelerators


Electrostatic Accelerators<br />

• Pelletron charging System By NEC (1960)<br />

• Metal cylinders with rounded ends joined by nylon<br />

• Move at at bout 15 m/s<br />

• Delivers charging currents of 100 - 200 µA<br />

• motors are supported on movable platforms which<br />

are counterweighted, automatically providing proper<br />

chain tension


Electrostatic Accelerators<br />

Pelletron Chain<br />

• Spark damage well<br />

protected.<br />

• Better voltage stability.<br />

- High efficiency.<br />

- Insensitive to moisture.<br />

- Long life (50,000 hours).<br />

- Simple and reliable.<br />

- Go to over 30 MV


Pelletron Charging<br />

11


The NCP 5UDH-2 2 PELLETRON<br />

• 5 MV Terminal Voltage<br />

• Dual Ion Sources<br />

– SNICS II for wide range of light and heavy ions<br />

– RF-Charge Exchange for He<br />

• Beam currents<br />

– 5 – 10 microamps for most probable charge states,<br />

– 100's of pA for high charge state heavy ions<br />

• Energies<br />

– 10 MeV for Protons, 15 MeV for He++<br />

– Useful currents for heavy ions to over 50 MeV<br />

• 15 degree beamline for Materials Analysis<br />

• 30 degree beamline for Ion Scattering/Nuclear Physics<br />

13


The NCP 5 MV Pelletron


The NCP 5 MV Pelletron<br />

15


The NCP 5 MV Pelletron<br />

16


The NCP 5 MV Column<br />

17


Control system<br />

Control & Data<br />

Acquisition<br />

• LINUX based<br />

computer user<br />

interface<br />

• MCA CARDS for data<br />

acquisition<br />

18


Control system


Beam Energy<br />

• Tandem accelerates the negative ion to the<br />

positive terminal<br />

• Then strips to many charge states, Q<br />

• Each state picks up Q x MV<br />

• Total Energy = (Q+1)MV<br />

• Charge state probability depends on terminal<br />

voltage, ion mass, and stripper<br />

20


Beam Currents<br />

• The next slide shows the wide variety of<br />

beam energies and currents from a<br />

tandem at 3MV<br />

• Higher energies are possible in the 5UDH<br />

21


ION SOURCES<br />

• The purpose of the ions sources are to<br />

produce either positive or negative ions<br />

from neutral atoms of elements of interest.<br />

• the ions beams are injected to the<br />

accelerator tube for gaining high energy.<br />

23


SNICS II Ion Source<br />

• “Source of Negative Ions by Cesium<br />

Sputtering” from solid materials.<br />

• Cs ions from hot “ionizer” surface are<br />

accelerated to the cathode.<br />

• Cathode contains element (s) for beams.<br />

• Simple operation; rapid cathode change.<br />

• Currents up to 100's of micoramps<br />

depending on material.<br />

24


SNICS II Ion Sources


Principle Of Operation<br />

• Cs vapor comes from the cesium oven into<br />

an enclosed area between the cooled<br />

cathode and the heated ionizing surface.<br />

• Some of the cesium condenses on the<br />

front of the cathode and some of the<br />

cesium is ionized by the hot surface.<br />

26


Cont..<br />

• The ionized cesium accelerates towards the<br />

cathode, sputtering particles from the cathode<br />

through the condensed cesium layer.<br />

• Some materials will preferentially sputter<br />

negative ions.<br />

• Other materials will preferentially sputter neutral<br />

or positive particles which pick up electrons as<br />

they pass through the condensed cesium layer,<br />

producing negative ions.<br />

27


SNICS II Ion Sources<br />

28


Alphatross Ion Sources


RF Charge Exchange Source<br />

30


Operation Principle<br />

• There are two main components in this device.<br />

The first one is the radio frequency positive ion<br />

source.<br />

• Helium gas is bled into a quartz discharge bottle<br />

through a metering valve to maintain a pressure<br />

of 10-50 millitorr.<br />

• An RF oscillator induces a plasma in the bottle<br />

which is intensified by the solenoid magnet.<br />

31


Cont..<br />

• A DC potential is applied across the<br />

plasma by probe power supply.<br />

• This potential extracts ions from the<br />

plasma and accelerates them through the<br />

Ta exit canal.<br />

• Then they enter the charge exchange<br />

chamber.<br />

32


Cont..<br />

• The charge exchange is the second main<br />

component of the Alphatross.<br />

• In it He + ions are neutralized by Rb vapor.<br />

• A few He atoms then undergo a 2 nd charge<br />

exchange reaction and become negative<br />

He ions.<br />

33


RF Charge Exchange Source<br />

Schematic<br />

34


15 Degree NEC RC43 Setup<br />

• RBS with channeling<br />

• Elastic Recoil Detection (ERD)<br />

– Surface hydrogen analysis<br />

• Nuclear Reaction Analysis<br />

(NRA)<br />

– Element specific analysis<br />

– E.g.:<br />

• 15N + H (Hydrogen depth<br />

profiling)<br />

• 4He + 16O (enhanced<br />

oxygen detection)<br />

• Particle Induced X-Ray<br />

Emission (PIXE)<br />

• Particle Induced Gamma<br />

Emission (PIGE)<br />

– Trace element analysis<br />

35


RC43 RBS Data Collection<br />

37


NEC RS61 Scattering System<br />

• Ion Scattering Studies<br />

• Nuclear Physics<br />

• Atomic Physics<br />

• Ion Implantation<br />

• Radiation Damage<br />

Studies<br />

38


5UDH-2 2 APPLICATIONS<br />

40


Ion Beam Analysis


Ion Beam Analysis<br />

• The 5UDH-2 accelerator systems is equipped for materials analysis with ion<br />

beams at MeV energies, using one or more of the following analytic<br />

techniques:<br />

• RBS (Rutherford Backscattering): for elemental depth profiling<br />

• Channeling: for measuring crystalline perfection and impurities in crystals<br />

• ERD (Elastic Recoil Detection): primarily for Hydrogen depth profiling<br />

• NRA (Nuclear Reaction Analysis): for measuring selected isotopes with<br />

enhanced sensitivity<br />

• PIXE (particle Induced X-Ray Emission): for trace element analysis


Rutherford Back Scattering (RBS)<br />

• Rutherford scattering is simple, central force,<br />

elastic scattering.<br />

• The effects of nuclear reactions are avoided by<br />

operating at beam energies below the Coulomb<br />

barrier.<br />

• This is basically billiard ball scattering.<br />

Kinematices and absolute cross sections can be<br />

calculated directly from first principles.


Rutherford Back Scattering (RBS)<br />

• The thickness of the surface layer is determined<br />

from the energy width of the surface peak, using<br />

standard dE/dx energy loss calculations.<br />

• The elemental concentration as a function of<br />

depth can also be determined from the number<br />

of counts as a function of energy for both the<br />

surface layer and the substrate.<br />

• Channeling Measures crystal perfection, which<br />

is especially valuable in silicon technologies.


PIXE<br />

• Non-destructive, quantitative analysis of heavier<br />

elements.<br />

• Generally used for trace element analysis 1-100ppm.<br />

• Identify high-Z elements (11


PIXE<br />

• Protons at an energy of a<br />

few MeV are used to<br />

excite the atoms in a<br />

sample.<br />

• The excited atoms emit<br />

characteristic X-rays.<br />

• The energy of the X-ray<br />

identifies the element<br />

from which it came, and<br />

the number of X-rays of a<br />

given energy is a<br />

measure of the element’s<br />

concentration.


PIXE<br />

• Probed depth tens of µm.<br />

• Sensitivity up to 1ppm.<br />

• Accuracy 10%.<br />

• Higher signal to background ratio as<br />

compared to electron beam induced x-ray<br />

spectroscopy.<br />

• Low velocities changes as compared to<br />

electron, hence no bremsstrahlung.<br />

• PIXE is 100 times more sensitive than EDX.


Thanks<br />

48


Control & Data Acquisition<br />

• Control & Data<br />

Acquisition<br />

• LINUX BASED COMPUTER<br />

CONTROLLED SYSTEM<br />

• MCA CARDS<br />

• Data Analysis Software<br />

• RUMP FOR RBS/ERDA<br />

SPECTRUM ANALYSIS<br />

• GUPIX FOR X-RAY<br />

SPECTRUM ANALYSIS<br />

• SIMNRA FOR NUCLEAR<br />

REACTION ANALYSIS<br />

49


Ion Beam Analysis


RBS<br />

E o<br />

E<br />

E=KEo

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