bd645, bd647, bd649, bd651 npn silicon power darlingtons - HEPHY

BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
V (BR)CEO
I CEO
I CBO
I EBO
h FE
V CE(sat)
V BE(sat)
V BE(on)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
I C = 30 mA I B = 0 (see Note 5)
V CE = 30 V
V CE = 40 V
V CE = 50 V
V CE = 60 V
V CB = 60 V
V CB = 80 V
V CB = 100 V
V CB = 120 V
V CB = 40 V
V CB = 50 V
V CB = 60 V
V CB = 70 V
I B = 0
I B = 0
I B = 0
I B = 0
I E = 0
I E = 0
I E = 0
I E = 0
I E = 0
I E = 0
I E = 0
I E = 0
T C = 150°C
T C = 150°C
T C = 150°C
T C = 150°C
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
V EB = 5 V I C = 0 (see Notes 5 and 6) 5 mA
V CE = 3 V I C = 3 A (see Notes 5 and 6) 750
I B =
I B =
12 mA
50 mA
I C = 3 A
I C = 5 A
(see Notes 5 and 6)
I B = 50 mA I C = 5 A (see Notes 5 and 6) 3 V
V CE = 3 V I C = 3 A (see Notes 5 and 6) 2.5 V
NOTES: 5. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
60
80
100
120
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
2
2.5
V
mA
mA
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R θJC Junction to case thermal resistance 2.0 °C/W
R θJA Junction to free air thermal resistance 62.5 °C/W
PRODUCT INFORMATION
2