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Industrietrends bei
Frequency Control Produkten
High-Tech
High Precision
High Temperature
Juni 2004
GmbH & Co. KG
1

Personal Profile
Bernd Neubig
March 2004: Opening of new facility for AXTAL GmbH & Co. KG in the
“Ideenwerkstadt” in Mosbach
Formation of AXTAL GmbH & Co. KG in November 2003 for Development,
Prototyping, Testing, and Manufacturing of Frequency Control GmbH & Co.
KG
Establishment of AXTAL Consulting in April 2002 as a Company for Design
and Consulting in the Field of Frequency Control Products and
Piezoelectric Sensors
Prior to founding AXTAL: Vice President of Tele Quarz (now Corning
Frequency Control) since 1983. Established the oscillator and filter product
line at Tele Quarz, with full responsibility including R&D, operations and
engineering. Since 1989 granted power of procuration.
Prior to joining TQ: 7 years with KVG (Kristallverarbeitung
Neckarbischofsheim, part of Vectron for several years), a manufacturer of
frequency controlled products. Positions as crystal design engineer and
later R&D manager for oscillators and filters.
Juni 2004
GmbH & Co. KG
2

Personal Profile
Bernd Neubig
1969 Graduation as Diplom Engineer (Dipl.-Ing.) for Telecommunications at
the University of Applied Sciences in Berlin. Study of Physics at the
Technical University in Berlin, graduation as Diplom Physicist (Dipl.-Phys.)
in 1975.
Chairman of the German Section of IEC TC 49 Standardization Committee,
Member of the Scientific Committee of the European Time and Frequency
Forum (EFTF). Member of the Technical Program Committee of the IEEE
Frequency Control Symposium (FCS)
More than 30 scientific and technical publications, Co-author of a book on
Frequency Control components („Das Grosse Quarzkochbuch“, 1997).
Juni 2004
GmbH & Co. KG
3

Location
AXTAL GmbH & Co. KG
Labor MOS
Wasemweg 5
D-74821 Mosbach
Germany
Phone: +49(6261)891-200
Fax: +49(6261)891-209
E-Mail: info@axtal.com
Web: www.AXTAL.com
. Frankfurt
. Heidelberg
. Mosbach
Juni 2004
GmbH & Co. KG
4

Company Profile
‣ AXTAL GmbH & Co. KG focuses on the , Prototyping, Testing and
Manufacturing of advanced Frequency Control Products (FCP), i.e. piezoelectric
crystal units, crystal oscillators, crystal filters, frequency & time modules, and
products for sensor applications
‣ AXTAL GmbH & Co. KG is backed by more than 28 years of experience in the
Crystal Industry and in the Frequency Control Business
‣ AXTAL GmbH & Co. KG possesses an assured crystal supply through a close
cooperation with ISO 9000 certified companies.
‣ AXTAL GmbH & Co. KG is the exclusive representative for FOMOS/Moscow,
the leading manufacturer of Langasite (LGS) crystals.
AXTAL cooperates with Piezocryst/Graz, Austria (ex AVL) in the field of
Gallium phosphate (GaPO 4
).
‣ AXTAL GmbH & Co. KG manufactures prototypes and samples completely inhouse.
It uses ISO 9000 certified Contract Manufacturers for standard processes
like Pick & Place etc. in volume production. All processes of its core competence
are kept in-house, incl. adjustment, final testing etc..
Juni 2004
GmbH & Co. KG
5

Company Profile
‣ AXTAL Consulting offers Consulting Services for application and
design of Frequency Control Products (FCP), i.e. quartz crystal units,
LGS and GaPO 4 crystal resonators, crystal oscillators, filters, SAW
devices as well as piezoelectric sensors
‣ AXTAL Consulting helps suppliers and users to optimise the match
between product and application, and thus reduces the risk of failures
in the volume application and in the field in an early stage
‣ AXTAL Consulting performs testing of FCP according to
acknowledged IEC- and MIL-Standards, comprising temperature,
phase noise, short-term stability and aging test systems etc.
‣ AXTAL Consulting executes testing and qualification approvals of
FCP and suppliers based on IEC 61178, 60368-4 and 60679-4 and to
AEC-Q200 including evaluation of workmanship to IPC-610
‣ AXTAL Consulting organises training courses and seminars on
Frequency Control Products and their application
Juni 2004
GmbH & Co. KG
6

Test Equipment
• GPS disciplined and Rubidium frequency
standard (Datum, Rohde & Schwarz)
• Cesium Primary Frequency Standard (HP)
• Oscilloscopes (HP/Agilent, Tektronix)
• Spectrum analyser (Tektronix)
• Network analysers, s-parameter Test set
(HP/Agilent)
• Vector Voltmeter (Rohde & Schwarz)
• Frequency Synthesizers (HP/Agilent,
Schomandl)
• Arbitrary Function Generator (HP)
• Vector Voltmeter (Rohde & Schwarz)
• Frequency Counters (HP/Agilent, Racal,
Philips, GuideTech)
• Phase Noise Test system
(Aeroflex/Europtest)
• Temperature Test chambers (Saunders,
Sun, Delta)
Juni 2004
GmbH & Co. KG
• Bake-out oven ~ 300°C (Heraeus)
• Precision LCR Meter (Hewlett-Packard)
• RF Millivoltmeters (Rohde & Schwarz,
Racal)
• Modulation Analyzers (Rohde &
Schwarz, Racal)
• Automatic crystal test systems (Transat,
Saunders)
• Digital Multimeters, Precision power
supplies, Data Acquisition (HP/Agilent,
Rohde & Schwarz)
• Aging test system
• Isolation resistance meter (Megger)
• Leak test system (Trio-Tech)
• Inspection systems (Vision
Engineering), Stereo Microscope,
Digicam
7

Frequency Control Produkte
• Resonatoren
Miniaturgehäuse
Hochfrequente Grundwellen- (HFF-) Quarze
Neue Piezomaterialien: Langasit (LGS) und Galliumphosphat (GaPO 4 )
• Oszillatoren:
PXO (Clock Oscillators)
VCXO (Voltage Controlled Oscillators)
TCXO (Temperature Compensated Oscillators)
OCXO (Oven Controlled Crystal Oscillators)
• Kristallfilter
Juni 2004
GmbH & Co. KG
8

Frequency Control Produkte
• Resonatoren
Miniaturgehäuse
Hochfrequente Grundwellen- (HFF-) Quarze
Neue Piezomaterialien: Langasit (LGS) und Galliumphosphat (GaPO 4 )
• Oszillatoren:
PXO (Clock Oscillators)
VCXO (Voltage Controlled Oscillators)
TCXO (Temperature Compensated Oscillators)
OCXO (Oven Controlled Crystal Oscillators)
• Kristallfilter
• Piezosensoren
Juni 2004
GmbH & Co. KG
9

Miniaturgehäuse
HC-49/U
HC-52/U
8x4,5
7x5
6x3,7
5x3,2
4x2,5
3,2x
2,5
2,5x2
HC-51/U
SMD Keramikgehäuse
Metallgehäuse bedrahtet
10 mm
• Stromverschweißen („RW“): Standard
• Kaltverschweißen(„CW“): Präzisionsquarze
• Kaltpresslöten: zylindrische Gehäuse
• Löten: veraltete Technik, hohe Alterung
• Stromverschweißen: Standard
• Glasfritte: für weitere Toleranzen
• Löten: selten noch eingesetzt
• Kleben: Problem Reflowfestigkeit
Juni 2004
GmbH & Co. KG
10

SMD Packaging Pro & Con
Methode Vorteile Nachteile
Stromschweißen
(Rollnaht)
Glasfritte
Löten
Kleben (Epoxy)
Metalldeckel geerdet Kein
Ausgasen
Niedertemperaturprozess
Kein Kovarring
Batch –Verschluss
Niedrige Kosten
Metalldeckel geerdet
Batch – Verschluss
Geringes Ausgasen
Kein Kovarring
Batch –Verschluss
Niedrige Kosten
Kovarring notwendig
Stückweiser Verschluss
Relativ hohe Kosten
Ausgasen
Langzeit-Dichtheit
Hohe Prozesstemperatur
Kovarring notwendig
Mittlere Kosten
Ausgasen
Langzeit-Dichtheit
Juni 2004
GmbH & Co. KG
11

Typischer Innenaufbau
Quarzblank
Elektroden
Klebestellen
Quarzblank
Deckel (Lid)
Klebestelle
Kappe
Montagefeder
Schweissnaht
Bodenteil
Stifte oder Drähte
THD Metallgehäuse
Kleine rechteckige Quarzscheibe
Tiefste Frequenz [MHz]
8 x 4,5 7 x 5 6 x 3,5 5 x 3,2 4 x 3,2 3,2x2,5
10 10 12 14 16 20
Risiko für TK-Dips wegen b/h
Kleinere Elektroden: C 1
, R 1
Thermische Anpassung an Substrat
Juni 2004
GmbH & Co. KG
12

Beispiel 3,2 x 2,5 mm
Herstellerangaben:
Frequenzbereich: (12) 20 ~ 50 MHz
Abgleich: ± (10) ~ ± 50 ppm
TK-Stabilität: ± (10) ~ ± 50 ppm
(-20) –10 ~ +60 (70)°C
Resonanzwiderstand: < (80) 50 Ω
Probleme:
- Verfügbarkeit
- Risiko: ∆R r (TK) = Dips
Juni 2004
GmbH & Co. KG
13

Andere Schwingungsmoden
Störresonanzen haben TK bis –90 ppm·K -1 . Stärke abhängig vom Quarzstrom
Juni 2004
GmbH & Co. KG
14

Kopplung mit Störresonanzen
Beispiel: 13 MHz Quarz im 5x7mm-Gehäuse, I x =12 mA
Juni 2004
GmbH & Co. KG
15

Hochfrequente
Grundwellenquarze (HFF)
Technologische Dickengrenze für mechanische Bearbeitung:
d = 30 µm höchste Grundfrequenz f = 55.7 MHz
Tiefes Strukturätzen mit Inverted-Mesa-Technik:
D 2
D 1 ≈ 50
µm
Beispiel: 155.52 MHz (Optische Übertragungstechnik)
Endgenauigkeit der Resonatordicke: ∆D 1 = ± 0,8 µm
Endgenauigkeit der Frequenz : ∆f = ±10 ppm ( = 10 -5 )
Toleranz der Elektrodendicke: ∆D El = ±0,05 nm
Planparallelität der Resonatorfläche: < 50 nm
Juni 2004
GmbH & Co. KG
16

HFF-Quarze
Juni 2004
GmbH & Co. KG
17

Neue Piezomaterialien
•Langasit(LGS)
• Gallium(ortho)phosphat GaPO 4
Juni 2004
GmbH & Co. KG
18

LGS und GaPO 4 Kristalle
Langasit (LGS) La 3 Ga 5 SiO 14
Werkfoto FOMOS Moskau
Juni 2004
GmbH & Co. KG
19

LGS und GaPO 4 Kristalle
Galliumorthophosphat GaPO 4
Werkfoto PIEZOCRYST Graz
Juni 2004
GmbH & Co. KG
20

LGS und GaPO 4 Kristalle
• Warum sind diese Materialien interessant
– Höherer piezoelektrischer Kopplungsfaktor k bei hoher
Güte und guter Temperaturstabilität
k max
1
Quarz
8 %
Langasit 14.8 %
GaPO 4 15.8 %
k ≈
C
0
C
+
1
C
• erlaubt einen größeren Ziehbereich bei VCXO
(Voltage Controlled Crystal Oscillator)
• erlaubt gute Ziehfähigkeit auch für Obertöne (OCXO)
• höhere Empfindlichkeit für Sensoranwendungen
Juni 2004
GmbH & Co. KG
21

LGS und GaPO 4 Material
• Warum sind diese Materialien interessant
– Kleinere Frequenzkonstante N = f · t als Quarz
Quarz (AT-Schnitt)
Langasit (Y-Schnitt)
GaPO 4 (Y -17° Schnitt)
N
1660 kHz mm
1380 kHz mm
1270 kHz mm
• Ermöglicht kleinere Resonatoren bei niedrigeren Frequenzen
– Anwendung bei sehr hohen Temperaturen
Grenze
Quarz Verzwilligung >350°C, α→β Phasenübergang @ 573°C
Langasit
Schmelzpunkt @ 1470°C
GaPO 4 α→β-Cristobalit Phasenübergang @ 970°C
Juni 2004
GmbH & Co. KG
22

LGS und GaPO 4 Material
• Grenzen der Anwendbarkeit
– Herstellungskosten
Quarz
Langasit
GaPO 4
Billiges Rohmaterial, kostengünstige Hydrothermal Zucht
Hoher Gallium Preis, kostengünstige Czochrasky Zucht
Hoher Gallium Preis, teuere und langsame Hydrothermal
Zucht, niedrige Ausbeute
– Verfügbare Wafergröße
Quarz
Langasit
GaPO 4
3’’ Wafer in großen Stückzahlen kommerziell verfügbar
3’’ und 4’’ Wafer kommerziell verfügbar
Blanks mit störungsfreien Zonen bis 2~4 cm²
Juni 2004
GmbH & Co. KG
23

Temperaturstabilität
• f(T) - Vergleich LGS vs. GaPO 4
Juni 2004
GmbH & Co. KG
24

Temperaturstabilität
• Gesamt-Temperaturstabilität LGS vs. GaPO 4
Juni 2004
GmbH & Co. KG
25

Temperaturstabilität
• Hochtemperatur f(T) LGS vs. GaPO 4
Juni 2004
GmbH & Co. KG
26

LGS : Resonator-Parameter
Freq [MHz] R 1 [Ohm] C 1 [fF] C 0 [pF] r Q
10,000 3,9 83 5 60 50.000
10,000 ** 1,2 118 10,6 89 39.000
10,650 3,3 136 81 59 33.000
10,650 9,4 162 9,7 60 9.800
10,700 28,0 47 3,9 83 11.700
16,000 9,5 36 2,4 67 32.000
27,000 8,2 31 2,3 75 28.000
180
160
140
120
LGS : C 1 and Q-factor
C1 [fF]
Q
60.000
50.000
40.000
Gehäuse:
HC-52/U
** DCC-4/06
(6x3,5 mm)
C 1
[fF]
100
80
30.000
Q-factor
60
20.000
40
20
10.000
0
0
5,000 10,000 15,000 20,000 25,000 30,000
Frequency [MHz]
Juni 2004
GmbH & Co. KG
27

GaPO 4 : Resonator-Parameter
Freq [MHz] R 1 [Ohm] C 1 [fF] C 0 [pF] r Q
7,375 4,6 59 3,4 58 80.000
10,000 2,4 78 4,4 56 85.000
12,966 2,2 80 4,6 57 72.000
13,280 3,0 68 70.000
15,625 3,7 64 5,2 83 46.600
16,000 7,4 69 3,8 54 20.000
16,500 8,0 58 25.000
9,85/ 3rd OT 62 1,1 1,8 1719 244.000
Gehäuse:
HC-52/U
Juni 2004
GmbH & Co. KG
28

LGS und GaPO 4 Resonatoren
AXTAL Resonators
Enclosure Model Frequency Stability
Footprint [MHz] [ppm] [°C]
AXLGS52F 5 ~ 27 ± 20 0° ~+50°
HC-52/U
DCC-4/06
(6 x 3,5)
HC-52/U
(Langasit)
AXLGS635F
(Langasit)
AXGAP52F
(GaPO4)
10 ~ 27 ± 20 0° ~+50°
5 ~ 22 ± 20 -10° ~+60°
Juni 2004
GmbH & Co. KG
29

Frequency Control Produkte
• Resonatoren
Miniaturgehäuse
Neue Piezomaterialien: Langasit (LGS) und Galliumphosphat (GaPO 4 )
• Oszillatoren:
PXO (Clock Oscillators)
VCXO (Voltage Controlled Oscillators)
TCXO (Temperature Compensated Oscillators)
OCXO (Oven Controlled Crystal Oscillators)
• Kristallfilter
Juni 2004
GmbH & Co. KG
30

Oszillatoren
•Grundtypen:
PXO (Packaged Xtal Oscillators = Clocks)
VCXO (Voltage Controlled Xtal Oscillators)
TCXO (Temperature Compensated Xtal Oscillators)
OCXO (Oven Controlled Xtal Oscillators)
Frequency Control Modules
(z.B. GPS disciplined OCXO,
FCXO (Frequency Controlled Xtal Oscillator usw.)
Juni 2004
GmbH & Co. KG
31

Oszillatoren II
• Miniaturisierung
Keramikgehäuse ähnlich wie bei Quarzen.
Konstruktion mit ASIC und “nacktem”
Quarzblank.
- Einschränkung bei kundenspezifischen Lösungen
- Grenzen der Langzeitstabilität (Alterung)
Für höhere Stabilität: separat hermetisch
gekapselter (Quarz-) Resonator
⎡ Hybridgehäuse, z.B. 9x14 mm
Juni 2004
GmbH & Co. KG
32

PXO & VCXO
Output
∆f
f
+10 ppm
25 0 C
-45 0 C
+100 0 C
T
-10 ppm
• Einfacher Quarzoszillator PXO (Packaged Xtal Oscillator)
Ziehspannung
Output
-45 0 C
∆f
f
+15 ppm
25 0 C
+100 0 C
T
Juni 2004
-15 ppm
• Spannungsgesteuerter Quarzoszillator VCXO
(Voltage Controlled Xtal Oscillator)
GmbH 2-7& Co. KG
33

Weitbereichs-VCXO
• Standard: AXIS30-Serie im 9x14-SMD-Gehäuse
• 2 Grundoptionen:
- mit GaPO 4 -Resonator:
gute TK-Stabilität, aber Kosten relativ hoch
- mit LGS-Resonator:
TK-Stabilität reduziert, kostengünstiger
• 3 Ziehbereichsoptionen:
±500 ppm, ±1000 ppm, ±1500 ppm
• 2 Betriebsspannungs-Optionen: 5 V und 3,3 V
• Oberhalb 20 MHz: Low-Jitter-Option
Juni 2004
GmbH & Co. KG
34

AXIS30-Serie
Parameter min. typ. max. Unit Condition
Frequency range 5
5
27
65
MHz
MHz
Standard frequencies 16.384 / 22.579 / 24.576 MHz
/ 27.000
Frequency stability ppm
Initial tolerance ppm
vs. temperature in
operating frequency range
-20°~+70°C (see Note 2)
± 40
± 70
ppm
ppm
Option 1 = “50“
(5 V)
Option 1 = “33”
(3.3 V)
Option 2 = “G”
(GaPO 4 )
Option 2 = “L”
(LGS)
vs. supply voltage
-10 10 ppm
variation
vs. load change -5 5 ppm
long term (aging) 1 st -10 10 ppm @ 40°C
year
Aging following years -5 5 ppm @ 40°C
Frequency adjustment
range
Electronic Frequency
Control (EFC) range
*see Note 3
± 500
± 500
± 1000
EFC voltage V C 0.25
0.15
± 1500
± 1000
± 1500
4.75
3.15
ppm
ppm
ppm
EFC slope (∆f / ∆V C ) positive
EFC input impedance 100 kΩ
RF output
Signal waveform HCMOS
Load 15 pF
Rise & decay time 10 ns
Symmetry (duty cycle) 40 60 % @ V S /2
Start-up time 4 ms
Supply voltage V S 4.75
3.13
Current consumption
(steady state)
5.0
3.3
5.25
3.47
V
V
V
V
Option 3 = “ ”
Option 3 = “500”
Option 3 =
“1000”*
Option 1 = “50“
(5 V)
Option 1 = “33”
(3.3 V)
Option 1 = “50“
(5 V)
Option 1 = “33”
(3.3 V)
40 mA @ +25°C
9x14 Gehäuse
Juni 2004
GmbH & Co. KG
35

Hochtemperatur-Oszillatoren
• Typische Anwendungen: Tiefbohrungen (Downhole), Sensorik,
Prozessüberwachung, Automotive, MIL
• PXO (Clocks) (AXE20HT) und VCXO (AXIS40HT) in hermetisch
dichtem 4-pin DIP14 Metallgehäuse
• In Entwicklung: PXO im TO-8-Gehäuse
• Bis 200°C: Quarzresonator in spezieller Ausführung, oberhalb 200°C:
LGS oder GaPO 4 -Resonatoren
• Hochtemperatur-qualifizierte Bauelemente,
bis +175°C: Speziell qualifizierte HCMOS-IC
bis +225°C und für hohe MTBF: ASIC in SOI-Technologie
• Hochtemperaturfeste Verbindungstechnik (Bonden, Chip&Wire auf
Hybridschaltung)
• Hochtemperatur-Screening und -Qualifikation
Juni 2004
GmbH & Co. KG
36

Beispiel: Hi-Temp VCXO
Parameter
Min.
Typ.
Max.
Unit
Condition
Frequency Range
10
25
MHz
Frequency stability in
temperature range 0°C~175°C
±100
±280
ppm
ppm
GaPO 4
LGS
Electronic Frequency Control
(EFC) range
±170
±350
±200
±400
ppm
ppm
GaPO 4
LGS
EFC Voltage
0,25
4,75
V
Positive slope
Absolute pull range (APR)
±60
ppm
0°C~175°C
RF Output signal
HC
MOS
15 pF
Supply Voltage
4,75
5,0
5,25
V
Current consumption
30
mA
Package 4pin DIP14 size
20,7x
13,1x
8,5
mm
Hermetically sealed
Juni 2004
GmbH & Co. KG
37

Gehäuse
DIP14-Gehäuse
TO-8 – Gehäuse
Juni 2004
GmbH & Co. KG
38

TCXO
Temperatur
Temperatur
Sensor
Sensor
Kompensations-
Kompensations-
Netzwerk
Netzwerk
oder
oder
Prozessor
Prozessor
XO
XO
-45 0 C
∆f
f
+1 ppm
-1 ppm
+100 0 C
T
• Temperaturkompensierter Quarzoszillator TCXO
(Temperature Compensated Xtal Oscillator)
Juni 2004
GmbH & Co. KG
39

TCXO Kompensation
• Moderne Kompensationstechnik mit ASIC
Lineare und kubische
Terme werden gewichtet
aufsummiert.
Ansteuerung von
CDAC (geschaltete
Kondensatorbänke).
Register z.B.
5 bit grob und 7 bit fein
Juni 2004
GmbH & Co. KG
40

OCXO
“Ofen”
Ofen
Ofen
Regelung
Regelung
XO
XO
Temperatur
Temperatur
Sensor
Sensor
-45 0 C
∆f
f
+1 x 10 -8
+100 0 C
T
-1 x 10 -8
• Temperaturstabilisierter Quarzoszillator (OCXO)
Oven Controlled Xtal Oscillator
Juni 2004
GmbH & Co. KG
41

OCXO
• OCXO mit AT-Quarz
Kostengünstig, gute Eigenschaften bezüglich
Stabilität und Phasenrauschen
• OCXO mit SC-Quarz
SC= „Stress-Compensated“ = doppelt gedrehter
Schnitt.
Sehr hohe Stabilität, niedriges Phasenrauschen,
geringe Alterung, aber teuerer als OCXO mit
AT-Quarz
Juni 2004
GmbH & Co. KG
42

AT & SC-Schnitt
Erforderliche
Schnittgenauigkeit:
∆Θ=15‘‘
∆Φ=10‘
θ
90 o
60 o
AT FC IT
30 o SC
0•
Y
-30 o
RT
BT
-60 o
Einfach
gedreht
Doppeltgedreht
-90 o 0 o 10 o 20 o 30 o
φ
Θ ≈ 35°: AT-Schnitt: TK = 0 ppm/K bei ≈ 25°C
SC-Schnitt*: TK = 0 ppm/K bei ≈ 95°C
* SC = Stress Compensated
Juni 2004
GmbH & Co. KG
43

OCXO
• Miniaturisierung
Kleinste derzeit übliche Baugröße für
OCXO: DIP14-Gehäuse, H= 7,5 mm,
Stabilitätsklasse ±100 ppb (= ±0,1 ppm).
SMD-Bauform in der Regel 22x25 mm.
In Entwicklung:
AXIOM60 im SMD- Gehäuse 9x14 mm
Juni 2004
GmbH & Co. KG
44

AXIOM60 Mini-OCXO
Parameter min. typ. max. Unit Condition
Frequency range 10 40 MHz
Standard frequencies 12.8 / 19.440 MHz
Frequency stability ppm
Initial tolerance ± 500 ppb @+25°C, VC= 2.5V
vs. temperature in operating frequency
± 280 ppb -20°~+70°C
range (steady state)
vs. supply voltage variation ± 50 ppb
vs. load change ± 20 ppb
long term (aging) 1 st year ± 1.0 ppm @ +40°C, after 30 days
Long term stability (overall) 2 15 years ± 4.6 ppm
Frequency adjustment range
Mechanical (internal trimmer) ppm N.A.
Electronic Frequency Control (EFC)
ppm N.A.
range
EFC voltage V C V
EFC slope (∆f / ∆V C )
EFC linearity %
EFC input impedance kΩ
Absolute pull range (APR) over
10 years, see Note 2
ppm
ppm
RF output
Signal waveform HCMOS
Load 15 pF
Rise & decay time 10 ns
Symmetry (duty cycle) 40 60 % @ V S /2
Warm-up time 5 min ∆f final /f 0 < ±0.5 ppm
Supply voltage V S 3.13
4.75
3.3
5.0
3.47
5.25
V Option I = 33
Option I = 50
Current consumption
(steady state @ +25°C)
150
100
200
150
mA
mA
Option I = 33
Option I = 50
Current consumption (warm-up) 500
350
mA
mA
Enable/disable function
Operable temperature range -30 +75 °C
Storage temperature range -40 +85 °C
Option I = 33
Option I = 50
Enclosure (see drawing) 14.4 x 9.5 x 8.5 max. mm IEC 60679-3 or 61837
Weight 5 gram
Packing Tape & Reel
ESD Sensitivity 1500 V HBM as in IEC 61000-
4-2
Gehäuse 9x14
Juni 2004
GmbH & Co. KG
45

Schneller OCXO
• Fast Warm-up
OCXO im DIP14-Gehäuse, H= 7,5 mm.
Aufheizen innerhalb von < 30 sec
Realisierung durch
- kleine thermische Masse
- kleine Resonatoren
Juni 2004
GmbH & Co. KG
46

AXIOM20F
Parameter min. typ. max. Unit Condition
Frequency range 10 20 MHz
Standard frequencies 10.000 / MHz
12.688281 / 12.688375
Frequency stability ppm
Initial tolerance ± 2 ppm @+25°C
vs. temperature in operating frequency
± 200 ± 500 ppb -40°~+55°C
range (steady state, calm air)
vs. supply voltage variation ± 100 ± 200 ppb
vs. load change ± 50 ± 100 ppb
Medium term ± 1 ± 5 ppb/ min
long term (aging) ± 2 ppb/day after 20 days
long term (aging) ± 0.5 ppm/year
Frequency adjustment range
Mechanical (internal trimmer) ppm N.A.
Electronic Frequency Control (EFC) ± 5 ppm Option V only
range
EFC voltage V C 0.5 4.5 V Option V only
EFC slope (∆f / ∆V C ) positive
EFC linearity %
EFC input impedance 100 kΩ
RF output
Signal waveform Clipped Sinus
Load 10 kΩ //10 pF
Amplitude (peak-peak) 1.2 1.5 2 V DC decoupled
Phase noise -120 -110 dBc /Hz @ 100 Hz
Short-term stability (Allan Variance) 1·10 -10 - τ = 100 ms
Warm-up time (calm air) 30 sec ∆f final /f 0 < ±0.1 ppm
Supply voltage V S 4.75 5.0 5.25 V
Current consumption (steady state) 20 25 mA @ +25°C
50 55 mA @ -40°C
10 15 mA @ +55°C
Current consumption (warm-up) 250 mA calm air
Enable/disable function
Operating temperature range 0 +60 °C
Operable temperature range -30 +75 °C
Storage temperature range -40 +85 °C
Enclosure (see drawing) 20.7x13.1x8.5 max. mm IEC 60679-3 or 61837
Weight 5 gram
Packing sticks
ESD Sensitivity 1500 V HBM as in IEC 61000-
4-2
DIP14-Gehäuse
Juni 2004
GmbH & Co. KG
47

DOCXO
• Höchste Stabilität: Doppel-Ofen (DOCXO)
Erreichbare TK-Stabilität: 0,x ppb = x·10 -10
Grenze: Quarzalterung, bestens ±10 ppb/Jahr
Regelung
Regelung
Innerer
Innerer
Ofen
Ofen
Innerer Ofen
Äußerer Ofen
XO
XO
Temperatur
Temperatur
Sensor
Sensor
1
1
Temperatursensor 2
Temperatursensor 2
-25 0 C
∆f
f
+1 x 10 -10
+90 0 C
T
-1 x 10 -10
Regelung
Regelung
Äußerer
Äußerer
Ofen
Ofen
Juni 2004
GmbH & Co. KG
48

Sondertypen
DCF77 = 77,5 kHz
Normal-
Normalfrequenzfrequenz-
Empfänger
Empfänger
M=31 F REF =2,5 kHz
10,0 MHz
Teiler
Teiler
:
:
M
M
F REF
= F NF
/M = F OCXO
/N
Phasen-
Phasen-
Detektor
Detektor
F REF
Tiefpass
Tiefpass
τ
τ
=
=
n•min
n•min
N=4000
Teiler:N
Teiler:N
OCXO
OCXO
F OUT =
F NF •N/M
• Synchronisierter OCXO (Beispiel DCF77)
1575,42 MHz
GPS-
GPS-
Empfänger
Empfänger
1 pps
µController
µController
+
+
Speicher
Speicher
Glättungs-
Glättungs-
Filter
Filter
10,0 MHz
OCXO
OCXO
F OUT
1 pps
Teiler
Teiler
• Disziplinierter OCXO (Beispiel GPS)
Juni 2004
GmbH & Co. KG
49

GPS Disziplinierter OCXO
GPS-Disciplined OCXO - GPSAX series
Enclosure Model Frequency Stability Output Supply Feature
Size [mm] [MHz] [ppb] [°C] Signal Load [V]
GPSAX 5 ~ 40 ± 0,1 -20°~+70° HCMOS 15 pF 3,3 V GPS
disciplined,
or Rubidium
stability
41x51x25 mm
5,0 V
• Ausgezeichnete Stabilität der Klasse 10 -10
durch Anbindung an die GPS Caesium Atomnormale
• Geringes Phasenrauschen und gute Kurzzeitstabilität
durch den internen OCXO (AT- oder SC-cut)
• Serielle Schnittstelle
• Selbständiges Modul in kompakter Bauform
Juni 2004
GmbH & Co. KG
50

Prinzip des GPS OCXO
GPS
ANT
GPS RX
1 pps
Phase
Counter
Micro
Computer
SERIELL
I/F
RF
OUT
OCXO
f-MULTI
x N
D/A
Converter
1 VCC
2 RF OUT
3 A GND
4 GPS ANT
5 D GND
6 ALARM
7 S/S
8 CASE GND
9 TX
10 RX
11 1 PPS
Juni 2004
GmbH & Co. KG
51

Frequency Control Produkte
• Resonatoren
Miniaturgehäuse
Neue Piezomaterialien: Langasit (LGS) und Galliumphosphat (GaPO 4 )
• Oszillatoren:
PXO (Clock Oscillators)
VCXO (Voltage Controlled Oscillators)
TCXO (Temperature Compensated Oscillators)
OCXO (Oven Controlled Crystal Oscillators)
• Kristallfilter
Juni 2004
GmbH & Co. KG
52

Piezoelektrische Filter
• Diskretfilter
Filter bestehend aus Einzelresonatoren
• Monolithische (Polylithische) Filter
Filter bestehend aus Mehrfach- (Doppel-) Resonatoren
• Quarzfilter
Schmalbandfilter, Bandbreite im n·10 kHz-Bereich
• Filter mit Langasit-Resonatoren
Speziell für Breitbandfilter, Bandbreite n·100 kHz
Juni 2004
GmbH & Co. KG
53

AXTAL Website
Für neueste Informationen
Besuchen Sie unsere
Webseite
www.axtal.com
Wasemweg 5
D-74821 Mosbach / Germany
fon: +49(6261)891-200
fax: +49(6261)891-209
E-Mail: info@axtal.com
Web: www.AXTAL.com
Juni 2004
GmbH & Co. KG
54

Anhang
Juni 2004
GmbH & Co. KG
55

Normenübersicht Quarze
IEC
Titel
DIN IEC/ DIN EN
60122-1 Quartz crystal units of assessed quality - Part 1: Generic specification
60122-2 Quartz crystal units for frequency control and selection. Part 2: Guide to the use
of quartz crystal units for frequency control and selection
60122-2-1 Quartz crystal units for frequency control and selection - Part 2: Guide to the use
of quartz crystal units for frequency control and selection - Section One: Quartz
crystal units for microprocessor clock supply
60122-2-1 Am.1 Amendment 1 - Quartz crystal units for frequency control and selection - Part 2:
Guide to the use of quartz crystal units for frequency control and selection -
Section One: Quartz crystal units for microprocessor clock supply
60122-3 Quartz crystal units of assessed quality - Part 3: Standard outlines and lead
connections
61837-1 Surface mounted piezoelectric devices for frequency control and selection -
Standard outlines and terminal lead connections - Part 1: Plastic moulded
enclosure outlines
61837-2 Surface mounted piezoelectric devices for frequency control and selection -
Standard outlines and terminal lead connections - Part 2: Ceramic enclosures
61837-3 Surface mounted piezoelectric devices for frequency control and selection -
Standard outlines and terminal lead connections - Part 3: Metal enclosures
61178-2 Quartz crystal units - A specification in the IEC Quality Assessment System for
Electronic Components (IECQ) - Part 2: Sectional specification - Capability approval
61178-2-1 Quartz crystal units - A specification in the IEC Quality Assessment System for
Electronic Components (IECQ) - Part 2: Sectional specification - Capability
approval - Section 1: Blank detail specification
61178-3 Quartz crystal units - A specification in the IEC Quality Assessment System for
Electronic Components (IECQ) - Part 3: Sectional specification - Qualification
approval
61178-3-1 Quartz crystal units - A specification in the IEC Quality Assessment System for
Electronic Components (IECQ) - Part 3: Sectional specification - Qualification
Schwingquarze
SMD-Gehäuse
Qualifikation
approval - Section 1: Blank detail specification Stand Oktober 2003
Juni 2004
GmbH & Co. KG
56

Normenübersicht Quarze
IEC
Titel
DIN IEC/ DIN EN
60444-1 Measurement of quartz crystal unit parameters by zero phase technique in a pinetwork.
Part 1: Basic method for the measurement of resonance frequency and
resonance resistance of quartz crystal units by zero phase technique in a pinetwork
60444-1 Am.1 Amendment 1 - Measurement of quartz crystal unit parameters by zero phase
technique in a pi-network. Part 1: Basic method for the measurement of
resonance frequency and resonance resistance of quartz crystal units by zero
phase technique in a pi-network
60444-2 Measurement of quartz crystal unit parameters by zero phase technique in a pinetwork.
Part 2: Phase offset method for measurement of motional capacitance
of quartz crystal units
60444-4 Measurement of quartz crystal unit parameters by zero phase technique in a pinetwork.
Part 4: Method for the measurement of the load resonance frequency
fL, load resonance resistance RL and the calculation of other derived values of
quartz crystal units,
60444-5 Measurement of quartz crystal units parameters - Part 5: Methods for the
determination of equivalent electrical parameters using automatic network
analyzer techniques and error correction
60444-6 Measurement of quartz crystal unit parameters - Part 6: Measurement of drive
level dependence (DLD)
60444-8 Measurement of quartz crystal unit parameters - Part 8: Test fixture for surface
mounted quartz crystal units
60444-7 Measurement of quartz crystal unit parameters - Part 7: Measurement of activity
(in progress) and frequency dips of quartz crystal units
60283 Methods for the measurement of frequency and equivalent resistance of
unwanted resonances of filter crystal units
61080 Guide to the measurement of equivalent electrical parameters of quartz crystal
units
Messtechnik
Stand Oktober 2003
Juni 2004
GmbH & Co. KG
57

Normenübersicht Oszillatoren
IEC
DIN IEC / DIN EN
Titel
60679-1 Quartz crystal controlled oscillators of assessed quality - Part 1: Generic specification
60679-1-am1
Amendment 1 - Quartz crystal controlled oscillators of assessed quality - Part 1: Generic
specification
60679-1-am2
Amendment 2 - Quartz crystal controlled oscillators of assessed quality - Part 1: Generic
specification
60679-2 Quartz crystal controlled oscillators. Part 2: Guide to the use of quartz crystal controlled
oscillators
60679-3 Quartz crystal controlled oscillators of assessed quality - Part 3: Standard outlines and lead
connections
60679-4 Quartz crystal controlled oscillators of assessed quality - Part 4: Sectional Specification -
Capability approval
60679-4-1 Quartz crystal controlled oscillators of assessed quality - Part 4-1: Blank detail specification -
Capability approval
60679-5 Quartz crystal controlled oscillators of assessed quality - Part 5: Sectional specification -
Qualification approval
60679-5-1 Quartz crystal controlled oscillators of assessed quality - Part 5-1: Blank detail specification -
Qualification approval
61837-1 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines
and terminal lead connections - Part 1: Plastic moulded enclosure outlines
61837-2 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines
and terminal lead connections - Part 2: Ceramic enclosures
61837-3 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines
and terminal lead connections - Part 3: Metal enclosures
61837-4 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines
and terminal lead connections Part 4: Hybrid enclosure outlines
SMD-Gehäuse
Juni 2004
GmbH & Co. KG
58