30.12.2014 Views

Author Index - Semiconductor Physics, Quantum Electronics ...

Author Index - Semiconductor Physics, Quantum Electronics ...

Author Index - Semiconductor Physics, Quantum Electronics ...

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

<strong>Semiconductor</strong> <strong>Physics</strong>, <strong>Quantum</strong> <strong>Electronics</strong> &<br />

Optoelectronics<br />

Autor <strong>Index</strong> 2001 (Volume 4)<br />

394<br />

A<br />

Abbasova T.M. – See Pashayev A.M., Gadjiyev A.R., Tagiyev<br />

T.B.; 4(4), 287–289.<br />

Adadurov A.F. – See Senchishin V.G., Borisenko A.Yu., Titskaja<br />

V.D., Koba V.S., Lebedev V.N., Osadchenko V.N.; 4(2), 123–<br />

125.<br />

Agaev F.G. – Short-wave photodetectors based on fine grain-sized<br />

poly-Si films; 4(2), 91–92.<br />

Agueev O.A. – The influence of heating temperature and sizes of<br />

components upon stresses and defect formation in semiconductor<br />

structures under isothermal heating. – Svetlichny A.M.;<br />

4(4), 307–312.<br />

Andryuschenko L.A. – Organosilicon luminencent compositions<br />

for scintillation detectors. – Goriletsky V.I., Grinyov B.V.,<br />

Gavrilyuk V.P., Zosim D.I., Skripkina V.T., Shershykov V.M.;<br />

4(2), 126–130.<br />

Anokhov S. – Singular peculiarities of a plane wave diffracted on<br />

half-plane. – Khizhnyak A., Lymarenko R., Soskin M.; 4(3),<br />

239–247.<br />

Anokhov S. – New method of apertured electromagnetic field<br />

modeling. – Khizhnyak A., Lymarenko R.; 4(4), 383–388.<br />

Avramenko S.F. – Study of postimplantation annealing of SiC. –<br />

Kiselev V.S., Romanyuk B.N., Valakh M.Ya.; 4(4), 249–252.<br />

B<br />

Babich V.M. – See Baranskii P.I., Venger E.F.; 4(1), 1–4.<br />

Baranskii P.I. – Development of the physical insight into the<br />

nature of the factors that control electrophysical and<br />

other properties of semiconductors. – Babich V.M., Venger E.F.;<br />

4(1), 1–4.<br />

Baschenko S.M. – Investigation of ArF* excimer laser VUV radiation<br />

action on sapphire. – Gochelashvili K.S., Zakirov R.M.,<br />

Klimov V.I., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–<br />

297.<br />

Beketov G.V. – See Fedorenko L.L., Kiseleov V.S., Svechnikov<br />

S.V., Yusupov M.M.; 4(3), 192–195.<br />

Belenko L.E. – See Goriletsky V.I., Mitichkin A.I., Rebrova T.P.;<br />

4(2), 139–141.<br />

Berchenko N.N. – See Yakovyna V.S., Nikiforov Yu.N.; 4(4),<br />

283–286.<br />

Berezhinsky L.I. – Microwave-induced optical non-linearity of<br />

amino acid crystals. – Dovbeshko G.I., Obukhovsky V.V.; 4(4),<br />

331–336.<br />

Berezhinsky L.I. – SPR-spectroscopy of protein molecule adsorbed<br />

in microwave field. – Chegel’ V.I., Shirshov Yu.M., Dovbeshko<br />

G.I., Melnichuk O.V.; 4(4), 343–346.<br />

Bilyi O.I. – Algorithm of microchip operation for controlling<br />

parameters of a latex agglutination reaction. – Yaremyk R.Y.,<br />

Kiselyov Y.M., Novikov V.P.; 4(3), 224–229.<br />

Bobitski Y.W. – Coupling between propagated modes in optical<br />

fibers with periodical structures. – Fitio V.M., Lebid S.Yu.; 4(3),<br />

219–223.<br />

Bogoboyashchyy V.V. – Density of heavy hole states of Hg 1-x Cd x Te<br />

in an isotropic nonparabolic approximation by exact measurements<br />

of electron concentration; 4(4), 273–277.<br />

Boltovets N.S. – Comprehensive studies of defect production and<br />

strained states in silicon epitaxial layers and device structures<br />

based on them. – Voitsikhovskyi D.I., Konakova R.V., Milenin<br />

V.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />

318–322.<br />

Boltovets N.S. – Technology and experimental studies of contacts<br />

for microwave diodes based on interstitial phases. – Ivanov<br />

V.N., Konakova R.V., Kurakin A.M., Milenin V.V., Soloviev<br />

E.A., Verimeychenko G.M.; 4(2), 93–105.<br />

Bondar’ V.G. – GSO: Ce 3+ scintillator with a high energy resolution.<br />

– Gavrilyuk V.P., Konevskii V.S., Krivonosov E.V.,<br />

Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />

Borisenko A.Yu. – See Senchishin V.G., Titskaja V.D., Koba V.S.,<br />

Lebedev V.N., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />

Borkovskaya L.V. – Silver-related local centres in cadmium sulfide. –<br />

Bulakh B.M., Khomenkova L.Yu., Markevich I.V.; 4(3), 163–<br />

167.<br />

Bulakh B.M. – See Borkovskaya L.V., Khomenkova L.Yu.,<br />

Markevich I.V.; 4(3), 163–167.<br />

Busaneva E.V. – See Karachevtseva L.A., Lytvynenko O.O.,<br />

Malovichko E.O., Stronska O.J., Gorchinsky O.D.; 4(4), 347–<br />

351.<br />

© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />

C<br />

Camorani P. – Absorption spectra and chromonic phase in aqueous<br />

solution of perylenetetracarboxylic bisimides derivatives. –<br />

Furier M., Kachkovskii O., Piryatinskiy Yu., Slominskii Yu.,<br />

Nazarenko V.; 4(3), 229–238.<br />

Chegel V.I. – See Dovbeshko G.I., Gridina N.Y., Repnytska O.P.,<br />

Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />

202–206.<br />

Chegel’ V.I. – Experimental investigations and computer modelling<br />

of the photochemical processes in Ag-As 2 S 3 structures<br />

using surface plasmon resonance spectroscopy. – Shirshov<br />

Yu.M., Kostyukevich S.O., Shepeliavyi P.E., Chegel’ Yu.V.; 4(4),<br />

301–306.<br />

Chegel’ V.I. – See Berezhinsky L.I., Shirshov Yu.M., Dovbeshko<br />

G.I., Melnichuk O.V.; 4(4), 343–346.<br />

Chegel’ Yu.V. – See Chegel’ V.I., Shirshov Yu.M., Kostyukevich<br />

S.O., Shepeliavyi P.E.; 4(4), 301–306.<br />

Chernobai V.A. – See Kirillova S.I., Venger E.F., Primachenko<br />

V.E.; 4(1), 12–18.


D<br />

Datsenko L.I. – Complex diffractometrical investigation of structural<br />

and compositional irregularities in GaAs:Si/GaAs films<br />

heavily doped with silicon. – Klad’ko V.P., Lytvyn P.M.,<br />

Domagala J., Machulin V.F., Prokopenko I.V., Molodkin V.B.,<br />

Maksimenko Z.V.; 4(3), 146–151.<br />

Davidenko I.I. – Features of photoinduced charge transfer in<br />

photomagnetic garnets YIG:Si and YIG:Co. – 4(3), 173–176.<br />

Denisova Z.L. – See Vlasenko N.A., Kononets Ya.F., Kopytko<br />

Yu.V., Veligura L.I., Soininen El., Törnqvist R.O., Vasama K.M.;<br />

4(1), 48–55.<br />

Dolgolenko A.P. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />

Karpenko A.Ya., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />

V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />

Domagala J. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />

Machulin V.F., Prokopenko I.V., Molodkin V.B., Maksimenko<br />

Z.V.; 4(3), 146–151.<br />

Dovbeshko G.I. – See Berezhinsky L.I., Chegel’ V.I., Shirshov<br />

Yu.M., Melnichuk O.V.; 4(4), 343–346.<br />

Dovbeshko G.I. – See Berezhinsky L.I., Obukhovsky V.V.; 4(4),<br />

331–336.<br />

Dovbeshko G.I. – Surface enhanced infrared absorption of nucleic<br />

acids on gold substrate. – Chegel V.I., Gridina N.Y., Repnytska<br />

O.P., Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.;<br />

4(3), 202–206.<br />

Dubovy V.K. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />

Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Litovchenko<br />

O.P., Lastovetsky V.F., Sugakov V.I.; 4(2), 85–90.<br />

E<br />

Efremov A.A. – See Litovchenko V.G., Evtukh A.A., Rassamakin<br />

Yu.V., Klyui M.I., Kostylov V.P.; 4(2), 82–84.<br />

Evtukh A.A. – See Litovchenko V.G., Efremov A.A., Rassamakin<br />

Yu.V., Klyui M.I., Kostylov V.P.; 4(2), 82–84.<br />

Evtukh A.A. – Investigations of impurity gettering in<br />

multicrystalline silicon. – Litovchenko V.G., Oberemok A.S.,<br />

Popov V.G., Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.;<br />

4(4), 278–282.<br />

F<br />

Fedorenko L.L. – Refractory contact to α-SiC produced by laser<br />

technology methods. – Kiseleov V.S., Svechnikov S.V., Yusupov<br />

M.M., Beketov G.V.; 4(3), 192–195.<br />

Fedorenko O.A. – See Fedorov A.G., Zagoruiko Yu.A., Kovalenko<br />

N.O., 4(2), 118–122.<br />

Fedorov A.G. – X-ray characterization of ZnSe single crystals doped<br />

with Mg. – Zagoruiko Yu.A., Fedorenko O.A., Kovalenko N.O.,<br />

4(2), 118–122.<br />

Fitio V.M. – See Bobitski Y.W., Lebid S.Yu.; 4(3), 219–223.<br />

Freik D.M. – Crystallochemistry of defects in lead telluride films. –<br />

Ruvinskii M.A., Ruvinskii B.M., Galushchak M.A.; 4(1), 5–8.<br />

Furier M. – See Piryatinskiy Yu., Nazarenko V.; 4(2), 142–145.<br />

Furier M. – See Camorani P., Kachkovskii O., Piryatinskiy Yu.,<br />

Slominskii Yu., Nazarenko V.; 4(3), 229–238.<br />

Furier M.S. – See Piryatinski Yu.P., Nazarenko V.G.; 4(4), 375–<br />

382.<br />

G<br />

Gadjiyev A.R. – See Pashayev A.M., Tagiyev T.B., Abbasova T.M.;<br />

4(4), 287–289.<br />

Galushchak M.A. – See Freik D.M., Ruvinskii B.M., Ruvinskii<br />

M.A.; 4(1), 5–8.<br />

Gavrilyuk V.P. – See Andryuschenko L.A., Goriletsky V.I., Grinyov<br />

B.V., Zosim D.I., Skripkina V.T., Shershykov V.M.; 4(2), 126–<br />

130.<br />

Gavrilyuk V.P. – See Bondar’ V.G., Konevskii V.S., Krivonosov<br />

E.V., Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />

© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />

Girnyk V.I. – See Kostyukevych S.A., Moskalenko N.L.,<br />

Shepeliavyi P.E., Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–<br />

73.<br />

Gnatovsky O. – Study of photorefractive effect in crystals<br />

Pb 5 Ge 3 O 11 :Cu and Pb 5 Ge 3 O 11 . – Linnik V., Pryadko L.; 4(3),<br />

199–201.<br />

Gochelashvili K.S. – See Baschenko S.M., Zakirov R.M., Klimov<br />

V.I., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–297.<br />

Gomeniuk Y.V. – See Lysenko V.S., Tyagulski I.P., Osiyuk I.N.;<br />

4(2), 75–81.<br />

Gorchinsky O.D. – See Karachevtseva L.A., Lytvynenko O.O.,<br />

Malovichko E.O., Stronska O.J., Busaneva E.V.; 4(4), 347–<br />

351.<br />

Goriletsky V.I. – IR spectroscopy of KBr salt and crystals. –<br />

Mitichkin A.I., Belenko L.E., Rebrova T.P.; 4(2), 139–141.<br />

Goriletsky V.I. – See Andryuschenko L.A., Grinyov B.V., Gavrilyuk<br />

V.P., Zosim D.I., Skripkina V.T., Shershykov V.M.; 4(2), 126–<br />

130.<br />

Gridina N.Y. – See Dovbeshko G.I., Chegel V.I., Repnytska O.P.,<br />

Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />

202–206.<br />

Grigorchuk N.I. – Influence of phonon dispersion on exciton<br />

damping in ionic crystals; 4(4), 323–330.<br />

Grinyov B.V. – See Andryuschenko L.A., Goriletsky V.I., Gavrilyuk<br />

V.P., Zosim D.I., Skripkina V.T., Shershykov V.M.; 4(2), 126–<br />

130.<br />

Groza A.A. – Influence of neutron irradiation on elctrooptical and<br />

structural properties of silicon. – Venger E.F., Varnina V.I.,<br />

Holiney R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko<br />

A.P., Starchik M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–<br />

155.<br />

Groza A.A. – See Litovchenko P.G., Wahl W., Dolgolenko A.P.,<br />

Karpenko A.Ya., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />

V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />

Gubanov V.O. – Raman scattering of light in biaxial<br />

monocline β-ZnP 2 crystals. – Kulakovs’kij V.D., Poveda R.A.,<br />

Yanchuk Z.Z.; 4(4), 391–393.<br />

Güttler H. – See Romanyuk A., Popov V.; 4(3), 187–191.<br />

H<br />

Holiney R.Yu. – See Groza A.A., Venger E.F., Varnina V.I.,<br />

Litovchenko P.G., Matveeva L.A., Litovchenko A.P., Starchik<br />

M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />

I<br />

Ignatenko V.A. – See Vasetskii V.M., Poroshin V.N.; 4(4), 260–<br />

263.<br />

Ivanov V.N. – See Boltovets N.S., Konakova R.V., Kurakin A.M.,<br />

Milenin V.V., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–<br />

105.<br />

Ivanovsky A.A. – See Kostyukevych S.A., Moskalenko N.L.,<br />

Shepeliavyi P.E., Girnyk V.I., Tverdokhleb I.V.; 4(1), 70–73.<br />

K<br />

Kachkovskii O. – See Camorani P., Furier M., Piryatinskiy Yu.,<br />

Slominskii Yu., Nazarenko V.; 4(3), 229–238.<br />

Kakazej M. – Behaviour of manganese impurity in β-ZnP 2 . –<br />

Kudin A., Pinkovs’ka M., Tartachnyk V.; 4(4), 264–272.<br />

Kalchenko V.I. – See Nesterenko B.O., Kazantseva Z.I., Stadnyk<br />

O.A., de Rossi D.; 4(1), 29–33.<br />

Kamalov A.B. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />

D.I., Kolyadina E.Yu., Lytvyn P.M., Lytvyn O.S., Matveeva<br />

L.A., Prokopenko I.V.; 4(4), 298–300.<br />

Karachevtseva L.A. – Bolometric characteristics of macroporous<br />

silicon structures. – Lytvynenko O.A., Malovichko E.A.,<br />

Sobolev V.D., Stronska O.J.; 4(3), 177–181.<br />

Karachevtseva L.A. – Electrical properties of macroporous silicon<br />

structures. – Lytvynenko O.A., Malovichko E.A.,<br />

Sobolev V.D., Stronska O.J.; 4(1), 40–43.<br />

395


Karachevtseva L.A. – Optical transmittance of 2D macroporous<br />

silicon structures. – Lytvynenko O.O., Malovichko E.O.,<br />

Stronska O.J., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />

351.<br />

Karlsteen M. – See Semchuk O.Yu., Willander M.; 4(2), 106–110.<br />

Karpenko A.Ya. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />

Dolgolenko A.P., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />

V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />

Kazantseva Z.I. – See Nesterenko B.O., Stadnyk O.A., de Rossi D.,<br />

Kalchenko V.I.; 4(1), 29–33.<br />

Khivrych V.I. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />

Dolgolenko A.P., Karpenko A.Ya., Litovchenko O.P.,<br />

Lastovetsky V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />

Khizhnyak A. – See Anokhov S., Lymarenko R., Soskin M.; 4(3),<br />

239–247.<br />

Khizhnyak A. – See Anokhov S., Lymarenko R.; 4(4), 383–388.<br />

Khomenkova L.Yu. – See Borkovskaya L.V., Bulakh B.M.,<br />

Markevich I.V.; 4(3), 163–167.<br />

Khomchenko V.S. – See Lytvyn O.S., Kryshtab T.G., Lytvyn P.M.,<br />

Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />

Yu.A.; 4(1), 19–23.<br />

Kirillova S.I. – Electronic properties of silicon surface at different<br />

oxide film conditions – Primachenko V.E., Venger E.F.,<br />

Chernobai V.A.; 4(1), 12–18.<br />

Kiseleov V.S. – See Fedorenko L.L., Svechnikov S.V., Yusupov<br />

M.M., Beketov G.V.; 4(3), 192–195.<br />

Kiselev V.S. – See Avramenko S.F., Romanyuk B.N., Valakh M.Ya.;<br />

4(4), 249–252.<br />

Kiselyov Y.M. – See Bilyi O.I., Yaremyk R.Y., Novikov V.P.; 4(3),<br />

224–229.<br />

Klad’ko V.P. – See Datsenko L.I., Lytvyn P.M., Domagala J.,<br />

Machulin V.F., Prokopenko I.V., Molodkin V.B., Maksimenko<br />

Z.V.; 4(3), 146–151.<br />

Klimov V.I. – See Baschenko S.M., Gochelashvili K.S., Zakirov<br />

R.M., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–297.<br />

Klyui M.I. – See Litovchenko V.G., Efremov A.A., Evtukh A.A.,<br />

Rassamakin Yu.V., Kostylov V.P.; 4(2), 82–84.<br />

Klyui N.I. – See Rozhin A.G., Litovchenko V.G., Melnik V.P.,<br />

Romanyuk B.N., Piryatinskii Yu.P.; 4(1), 44–47.<br />

Koba V.S. – See Senchishin V.G., Borisenko A.Yu., Titskaja V.D.,<br />

Lebedev V.N., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />

Kolyadina E.Yu. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />

D.I., Kamalov A.B., Lytvyn P.M., Lytvyn O.S., Matveeva L.A.,<br />

Prokopenko I.V.; 4(4), 298–300.<br />

Konakova R.V. – Ordering of lateral nonuniformity of TiB x film<br />

and transition layer in the TiB x -GaAs system. – Milenin V.V.,<br />

Voitsikhovskyi D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn<br />

P.M., Lytvyn O.S., Matveeva L.A., Prokopenko I.V.; 4(4), 298–<br />

300.<br />

Konakova R.V. – See Boltovets N.S., Ivanov V.N., Kurakin A.M.,<br />

Milenin V.V., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–<br />

105.<br />

Konakova R.V. – See Boltovets N.S., Voitsikhovskyi D.I., Milenin<br />

V.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />

318–322.<br />

Kondratenko S.V. – See Vakulenko O.V., Serdega B.K.; 4(3), 159–<br />

162.<br />

Konevskii V.S. – See Bondar’ V.G., Gavrilyuk V.P., Krivonosov<br />

E.V., Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />

Kononets Ya.F. – See Vlasenko N.A., Denisova Z.L., Kopytko<br />

Yu.V., Veligura L.I., Soininen El., Törnqvist R.O., Vasama K.M.;<br />

4(1), 48–55.<br />

Kopytko Yu.V. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />

Z.L., Veligura L.I., Soininen El., Törnqvist R.O., Vasama K.M.;<br />

4(1), 48–55.<br />

Korovin A.V. – Difference harmonic generation due to spin-flip<br />

transitions in an asymmetric quantum well; 4(1), 34–39.<br />

Kosharskii K.G. – See Semchuk O.Yu., Veskliarskii R.Z.; 4(4),<br />

337–342.<br />

Kostylov V.P. – See Litovchenko V.G., Efremov A.A., Evtukh<br />

A.A., Rassamakin Yu.V., Klyui M.I.; 4(2), 82–84.<br />

396<br />

Kostyukevich K.V. – See Snopok B.A., Lysenko S.I., Lytvyn P.M.,<br />

Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj P.E.,<br />

Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />

Kostyukevich S.A. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />

S.I., Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A.,<br />

Shepelyavyi P.E., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />

Kostyukevich S.A. – Using non-oranic resist based on As-S-Se<br />

chalcogenide glasses for combined optical/digital security devices.<br />

– Moskalenko N.L., Shepeliavyi P.E., Girnyk V.I.,<br />

Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–73.<br />

Kostyukevich S.O. – See Chegel’ V.I., Shirshov Yu.M., Shepeliavy<br />

P.E., Chegel’ Yu.V.; 4(4), 301–306.<br />

Kovalenko N.O. – See Fedorov A.G., Zagoruiko Yu.A., Fedorenko<br />

O.A., 4(2), 118–122.<br />

Kovalenko S.A. – Descartes-Snell law of refraction with absorption;<br />

4(3), 214–218.<br />

Kovalenko S.A. – Thickness dependences of optical constants<br />

for thin layers of some metals and semiconductors. – Lisitsa<br />

M.P.; 4(4), 352–357.<br />

Krivonosov E.V. – See Bondar’ V.G., Gavrilyuk V.P., Konevskii<br />

V.S., Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />

Kryshtab T.G. – See Lytvyn O.S., Khomchenko V.S., Lytvyn P.M.,<br />

Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />

Yu.A.; 4(1), 19–23.<br />

Kudin A.P. – Influence of structural defects on photoconductivity<br />

of zinc diphosphide. – Kuts V.I., Litovchenko P.G., Pinkovska<br />

M.B., Tartachnyk V.P.; 4(3), 156–159.<br />

Kudin A. – See Kakazej M., Pinkovs’ka M., Tartachnyk V.; 4(4),<br />

264–272.<br />

Kulakovs’kij V.D. – See Gubanov V.O., Poveda R.A., Yanchuk<br />

Z.Z.; 4(4), 391–393.<br />

Kunets V.P. – Optical investigations of thermostimulated changes<br />

in an ensemble of CdS x Se 1-x quantum dots embedded into<br />

borosilicate glass matrix. – Yukhymchuk V.O., Valakh M.Ya.;<br />

4(3), 196–198.<br />

Kurakin A.M. – See Boltovets N.S., Ivanov V.N., Konakova R.V.,<br />

Milenin V.V., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–105.<br />

Kuts V.I. – See Kudin A.P., Litovchenko P.G., Pinkovska M.B.,<br />

Tartachnyk V.P.; 4(3), 156–159.<br />

© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />

L<br />

Lastovetsky V.F. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />

Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Litovchenko<br />

O.P., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />

Lebedev V.N. – See Senchishin V.G., Borisenko A.Yu., Titskaja V.D.,<br />

Koba V.S., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />

Lebid S.Yu. – See Bobitski Y.W., Fitio V.M.; 4(3), 219–223.<br />

Lemeshko V.V. – Dynamics of photoinduced instability in<br />

ferroelectric photorefractive crystals. – Morozovska A.N.,<br />

Obukhovsky V.V.; 4(4), 358–374.<br />

Linnik V. – Study of photorefractive effect in crystals Pb 5 Ge 3 O 11 :Cu<br />

and Pb 5 Ge 3 O 11 . – Gnatovsky O., Pryadko L.; 4(3), 199–201.<br />

Lisitsa M.P. – See Kovalenko S.A.; 4(4), 352–357.<br />

Litovchenko A.P. – See Groza A.A., Venger E.F., Varnina V.I.,<br />

Holiney R.Yu., Litovchenko P.G., Matveeva L.A., Starchik M.I.,<br />

Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />

Litovchenko N.M. – About influences of different actions on spectra<br />

of impurity photoluminescence in GaAs. – Prokhorovich<br />

A.V., Strilchuk O.N.; 4(3), 168–170.<br />

Litovchenko N.M. – Stimulated by heating-up changes of luxbrightness<br />

characteristics of semi-insulating specially undoped<br />

GaAs crystals. – Prokhorovich A.V., Strilchuk O.N.; 4(3), 171–<br />

172.<br />

Litovchenko O.P. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />

Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Lastovetsky<br />

V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />

Litovchenko P.G. – Influence of preliminary irradiation on radiation<br />

hardness of silicon and indium antimonide. – Wahl W.,<br />

Groza A.A., Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I.,<br />

Litovchenko O.P., Lastovetsky V.F., Sugakov V.I., Dubovy V.K.;<br />

4(2), 85–90.


Litovchenko P.G. – See Groza A.A., Venger E.F., Varnina V.I.,<br />

Holiney R.Yu., Matveeva L.A., Litovchenko A.P., Starchik<br />

M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />

Litovchenko P.G. – See Kudin A.P., Kuts V.I., Pinkovska M.B.,<br />

Tartachnyk V.P.; 4(3), 156–159.<br />

Litovchenko V.G. – Increase of planar homogeneity of multisilicon<br />

structures by gettering treatments. – Efremov A.A.,<br />

Evtukh A.A., Rassamakin Yu.V., Klyui M.I., Kostylov V.P.; 4(2),<br />

82–84.<br />

Litovchenko V.G. – See Evtukh A.A., Oberemok A.S., Popov<br />

V.G., Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.; 4(4),<br />

278–282.<br />

Litovchenko V.G. – See Rozhin A.G., Klyui N.I., Melnik V.P.,<br />

Romanyuk B.N., Piryatinskii Yu.P.; 4(1), 44–47.<br />

Lymarenko R. – See Anokhov S., Khizhnyak A., Soskin M.; 4(3),<br />

239–247.<br />

Lymarenko R. – See Anokhov S., Khizhnyak A.; 4(4), 383–388.<br />

Lysak V.V. – Group delay investigation of N-order chirping mirrors.<br />

– Sukhoivanov I.A., Petrov S.I.; 4(4), 389–390<br />

Lysenko S.I. – See Snopok B.A., Kostyukevich K.V., Lytvyn P.M.,<br />

Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyi P.E.,<br />

Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />

Lysenko V.S. – Effect of oxide-semiconductor interface traps on<br />

low-temperature operation of MOSFETs. – Tyagulski I.P.,<br />

Gomeniuk Y.V., Osiyuk I.N.; 4(2), 75–81.<br />

Lytvyn O.S. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />

D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn P.M., Matveeva<br />

L.A., Prokopenko I.V.; 4(4), 298–300.<br />

Lytvyn O.S. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />

Lytvyn P.M., Mamykin S.V., Zynyo S.A., Shepelyavyj P.E.,<br />

Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />

Lytvyn O.S. – Structural investigations of annealed ZnS:Cu, Ga<br />

film phosphors. – Khomchenko V.S., Kryshtab T.G., Lytvyn<br />

P.M., Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />

Yu.A.; 4(1), 19–23.<br />

Lytvyn P.M. – See Datsenko L.I., Klad’ko V.P., Domagala J.,<br />

Machulin V.F., Prokopenko I.V., Molodkin V.B., Maksimenko<br />

Z.V.; 4(3), 146–151.<br />

Lytvyn P.M. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />

D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn O.S., Matveeva<br />

L.A., Prokopenko I.V.; 4(4), 298–300.<br />

Lytvyn P.M. – See Lytvyn O.S., Khomchenko V.S., Kryshtab T.G.,<br />

Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />

Yu.A.; 4(1), 19–23.<br />

Lytvyn P.M. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />

Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj P.E.,<br />

Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />

Lytvynenko O.A. – See Karachevtseva L.A., Malovichko E.A.,<br />

Sobolev V.D., Stronska O.J.; 4(1), 40–43.<br />

Lytvynenko O.A. – See Karachevtseva L.A., Malovichko E.A.,<br />

Sobolev V.D., Stronska O.J.; 4(3), 177–181.<br />

Lytvynenko O.O. – See Karachevtseva L.A., Malovichko E.O.,<br />

Stronska O.J., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />

351.<br />

M<br />

Machulin V.F. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />

Domagala J., Prokopenko I.V., Molodkin V.B., Maksimenko<br />

Z.V.; 4(3), 146–151.<br />

Makara V.A. – See Boltovets N.S., Voitsikhovskyi D.I., Konakova<br />

R.V., Milenin V.V., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />

318–322.<br />

Maksimenko Z.V. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />

Domagala J., Machulin V.F., Prokopenko I.V., Molodkin V.B.;<br />

4(3), 146–151.<br />

Malovichko E.A. – See Karachevtseva L.A., Lytvynenko O.A.,<br />

Sobolev V.D., Stronska O.J.; 4(1), 40–43.<br />

Malovichko E.A. – See Karachevtseva L.A., Lytvynenko O.A.,<br />

Sobolev V.D., Stronska O.J.; 4(3), 177–181.<br />

Malovichko E.O. – See Karachevtseva L.A., Lytvynenko O.O.,<br />

Stronska O.J., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />

351.<br />

Mamykin S.V. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />

S.I., Lytvyn P.M., Lytvyn O.S., Zynyo S.A., Shepelyavyi P.E.,<br />

Kostyukevich S.A., Shirshov Yu.M., E.F. Venger; 4(1), 56–69.<br />

Markevich I.V. – See Borkovskaya L.V., Bulakh B.M., Khomenkova<br />

L.Yu.; 4(3), 163–167.<br />

Martynov V.P. – See Bondar’ V.G., Gavrilyuk V.P., Konevskii V.S.,<br />

Krivonosov E.V., Savvin Yu.N.; 4(2), 131–133.<br />

Matveeva L.A. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />

R.Yu., Litovchenko P.G., Litovchenko A.P., Starchik M.I.,<br />

Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />

Matveeva L.A. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />

D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn<br />

O.S., Prokopenko I.V.; 4(4), 298–300.<br />

Mazin M.O. – See Lytvyn O.S., Khomchenko V.S., Kryshtab T.G.,<br />

Lytvyn P.M., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />

Yu.A.; 4(1), 19–23.<br />

Mel’nichenko M.M. – See Boltovets N.S., Voitsikhovskyi D.I.,<br />

Konakova R.V., Milenin V.V., Makara V.A., Rudenko O.V.; 4(4),<br />

318–322.<br />

Melnichuk O.V. – See Berezhinsky L.I., Chegel’ V.I., Shirshov<br />

Yu.M., Dovbeshko G.I.; 4(4), 343–346.<br />

Melnik V.P. – See Rozhin A.G., Klyui N.I., Litovchenko V.G.,<br />

Romanyuk B.N., Piryatinskii Yu.P.; 4(1), 44–47.<br />

Mikhkelsoo V.T. – See Baschenko S.M., Gochelashvili K.S., Zakirov<br />

R.M., Klimov V.I., Prokhorov O.M.; 4(4), 290–297.<br />

Milenin V.V. – See Boltovets N.S., Ivanov V.N., Konakova R.V.,<br />

Kurakin A.M., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–<br />

105.<br />

Milenin V.V. – See Boltovets N.S., Voitsikhovskyi D.I., Konakova<br />

R.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />

318–322.<br />

Milenin V.V. – See Konakova R.V., Voitsikhovskyi D.I., Kamalov<br />

A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn O.S., Matveeva<br />

L.A., Prokopenko I.V.; 4(4), 298–300.<br />

Mitichkin A.I. – See Goriletsky V.I., Belenko L.E., Rebrova T.P.;<br />

4(2), 139–141.<br />

Molodkin V.B. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />

Domagala J., Machulin V.F., Prokopenko I.V., Maksimenko Z.V.;<br />

4(3), 146–151.<br />

Monastyrskii L.S. – Features of electrical charge transfer in porous<br />

silicon; 4(1), 19–23.<br />

Moskalenko N.L. – See Kostyukevych S.A., Shepeliavyi P.E.,<br />

Girnyk V.I., Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–73.<br />

Morozovska A.N. – Dynamics of photoinduced instability in<br />

ferroelectric photorefractive crystals. – Obukhovsky V.V.,<br />

Lemeshko V.V.; 4(4), 358–374.<br />

N<br />

Nazarenko V. – See Camorani P., Furier M., Kachkovskii O.,<br />

Piryatinskiy Yu., Slominskii Yu.; 4(3), 229–238.<br />

Nazarenko V. – See Piryatinskiy Yu., Furier M.; 4(2), 142–145.<br />

Nazarenko V.G. – See Piryatinski Yu.P., Furier M.S.; 4(4), 375–<br />

382.<br />

Nesterenko B.O. – Dipole properties of the upper rim phosphorylated<br />

calix[4]arenes in the Langmuir–Blodgett films. –<br />

Kazantseva Z.I., Stadnyk O.A., de Rossi D., Kalchenko V.I.;<br />

4(1), 29–33.<br />

Nikiforov Yu.N. – See Yakovyna V.S., Berchenko N.N.; 4(4), 283–<br />

286.<br />

Nikitenko E.V. – See Serdega B.K., Prikhodenko V.I.; 4(1), 9–11.<br />

Novikov V.P. – See Bilyi O.I., Yaremyk R.Y., Kiselyov Y.M.; 4(3),<br />

224–229.<br />

O<br />

Oberemok A.S. – See Evtukh A.A., Litovchenko V.G., Popov V.G.,<br />

Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.; 4(4), 278–282.<br />

© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />

397


Obukhovsky V.V. – See Berezhinsky L.I., Dovbeshko G.I.; 4(4),<br />

331–336.<br />

Obukhovsky V.V. – Dynamics of photoinduced instability in<br />

ferroelectric photorefractive crystals. – Morozovska A.N.,<br />

Lemeshko V.V.; 4(4), 358–374.<br />

Oleksenko P.F. – See Stronski A.V., Vlèek M.; 4(3), 210–213.<br />

Osadchenko V.N. – See Senchishin V.G., Borisenko A.Yu., Titskaja<br />

V.D., Koba V.S., Lebedev V.N., Adadurov A.F.; 4(2), 123–125.<br />

Osiyuk I.N. – See Lysenko V.S., Tyagulski I.P., Gomeniuk Y.V.;<br />

4(2), 75–81.<br />

398<br />

P<br />

Pashayev A.M. – Hopping conductivity in GaSe monocrystals<br />

at low temperatures. – Gadjiyev A.R., Tagiyev T.B., Abbasova<br />

T.M.; 4(4), 287–289.<br />

Pervak V.Yu. – Spectral properties of reflective interference filters.<br />

– Poperenko L.V., Pervak Yu.A.; 4(2), 134–138.<br />

Pervak Yu.A. – See Pervak V.Yu., Poperenko L.V.; 4(2), 134–138.<br />

Petrov S.I. – See Lysak V.V., Sukhoivanov I.A.; 4(4), 389–390<br />

Pinkovs’ka M. – See Kakazej M., Kudin A., Tartachnyk V.; 4(4),<br />

264–272.<br />

Pinkovska M.B. – See Kudin A.P., Kuts V.I., Litovchenko P.G.,<br />

Tartachnyk V.P.; 4(3), 156–159.<br />

Piryatinski Yu.P. – Electrooptical properties of liquid crystal<br />

n-pentil-n′-cyanobifenil with J-aggregates of astrofloxine. –<br />

Furier M.S., Nazarenko V.G.; 4(4), 375–382.<br />

Piryatinskiy Yu. – Photoluminescence of pentacene solutions<br />

in n-pentyl-n′-cyanobiphenyl. – Furier M., Nazarenko V.; 4(2),<br />

142–145.<br />

Piryatinskiy Yu. – See Camorani P., Furier M., Kachkovskii O.,<br />

Slominskii Yu., Nazarenko V.; 4(3), 229–238.<br />

Piryatinskii Yu.P. – See Rozhin A.G., Klyui N.I., Litovchenko<br />

V.G., Melnik V.P., Romanyuk B.N.; 4(1), 44–47.<br />

Poperenko L.V. – See Pervak V.Yu., Pervak Yu.A.; 4(2), 134–138.<br />

Popov V.G. – Characterization of «solar» multicrystalline silicon<br />

by local measurements; 4(3), 182–186.<br />

Popov V.G. – See Evtukh A.A., Litovchenko V.G., Oberemok A.S.,<br />

Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.; 4(4), 278–<br />

282.<br />

Popov V. – See Romanyuk A., Güttler H.; 4(3), 187–191.<br />

Poroshin V.N. – See Vasetskii V.M., Ignatenko V.A.; 4(4), 260–<br />

263.<br />

Poveda R.A. – See Gubanov V.O., Kulakovs’kij V.D., Yanchuk Z.Z.;<br />

4(4), 391–393.<br />

Prikhodenko V.I. – See Serdega B.K., Nikitenko E.V.; 4(1), 9–11.<br />

Primachenko V.E. – See Kirillova S.I., Venger E.F., Chernobai<br />

V.A.; 4(1), 12–18.<br />

Prokhorov O.M. – See Baschenko S.M., Gochelashvili K.S., Zakirov<br />

R.M., Klimov V.I., Mikhkelsoo V.T.; 4(4), 290–297.<br />

Prokhorovich A.V. – See Litovchenko N.M., Strilchuk O.N.; 4(3),<br />

168–170.<br />

Prokhorovich A.V. – See Litovchenko N.M., Strilchuk O.N.; 4(3),<br />

171–172.<br />

Prokopenko I.V. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />

Domagala J., Machulin V.F., Molodkin V.B., Maksimenko Z.V.;<br />

4(3), 146–151.<br />

Prokopenko I.V. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />

D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn<br />

O.S., Matveeva L.A.; 4(4), 298–300.<br />

Prokopenko I.V. – See Lytvyn O.S., Khomchenko V.S., Kryshtab<br />

T.G., Lytvyn P.M., Mazin M.O., Rodionov V.Ye., Tzyrkunov<br />

Yu.A.; 4(1), 19–23.<br />

Pryadko L. – Study of photorefractive effect in crystals<br />

Pb 5 Ge 3 O 11 :Cu and Pb 5 Ge 3 O 11 . – Gnatovsky O., Linnik V.; 4(3),<br />

199–201.<br />

R<br />

Rassamakin Yu.V. – See Evtukh A.A., Litovchenko V.G.,<br />

Oberemok A.S., Popov V.G., Romanyuk B.N., Volkov S.G.; 4(4),<br />

278–282.<br />

Rassamakin Yu.V. – See Litovchenko V.G., Efremov A.A., Evtukh<br />

A.A., Klyui M.I., Kostylov V.P.; 4(2), 82–84.<br />

Rebrova T.P. – See Goriletsky V.I., Mitichkin A.I., Belenko L.E.;<br />

4(2), 139–141.<br />

Repnytska O.P. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />

Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />

202–206.<br />

Rodionov V.Ye. – See Lytvyn O.S., Khomchenko V.S., Kryshtab<br />

T.G., Lytvyn P.M., Mazin M.O., Prokopenko I.V., Tzyrkunov<br />

Yu.A.; 4(1), 19–23.<br />

Romanyuk A. – Low-temperature growth of diamond films using<br />

supersonic DC arcjet. – Güttler H., Popov V.; 4(3), 187–191.<br />

Romanyuk B.N. – See Avramenko S.F., Kiselev V.S., Valakh M.Ya.;<br />

4(4), 249–252.<br />

Romanyuk B.N. – See Evtukh A.A., Litovchenko V.G., Oberemok<br />

A.S., Popov V.G., Rassamakin Yu.V., Volkov S.G.; 4(4), 278–<br />

282.<br />

Romanyuk B.N. – See Rozhin A.G., Klyui N.I., Litovchenko V.G.,<br />

Melnik V.P., Piryatinskii Yu.P.; 4(1), 44–47.<br />

de Rossi D. – See Nesterenko B.O., Kazantseva Z.I., Stadnyk O.A.,<br />

Kalchenko V.I.; 4(1), 29–33.<br />

Rozhin A.G. – Activation of porous Si blue emission due to<br />

preanodization ion implantation. – Klyui N.I., Litovchenko<br />

V.G., Melnik V.P., Romanyuk B.N., Piryatinskii Yu.P.; 4(1),<br />

44–47.<br />

Rudenko O.V. – See Boltovets N.S., Voitsikhovskyi D.I., Konakova<br />

R.V., Milenin V.V., Makara V.A., Mel’nichenko M.M.; 4(4),<br />

318–322.<br />

Ruvinskii B.M. – See Freik D.M., Ruvinskii M.A., Galushchak<br />

M.A.; 4(1), 5–8.<br />

Ruvinskii M.A. – See Freik D.M., Ruvinskii B.M., Galushchak<br />

M.A.; 4(1), 5–8.<br />

© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />

S<br />

Savvin Yu.N. – See Bondar’ V.G., Gavrilyuk V.P., Konevskii V.S.,<br />

Krivonosov E.V., Martynov V.P.; 4(2), 131–133.<br />

Semchuk O.Yu. – Features of optical properties of ferromagnetic<br />

semiconductors with dynamic laser-induced gratings. –<br />

Veskliarskii R.Z., Kosharskii K.G.; 4(4), 337–342.<br />

Semchuk O.Yu. – Features of conduction electrons motion in the<br />

field of coherent light beams. – Willander M., Karlsteen M.;<br />

4(2), 106–110.<br />

Semikina T.V. – Optical and protective properties of different<br />

type diamond and diamond-like carbon films. – Shmyryeva A.N.;<br />

4(4), 312–317.<br />

Senchishin V.G. – OsadchenkoInfluence of plasticizer structure on<br />

stability of polystyrene scintillators optical characteristics. –<br />

Borisenko A.Yu., Titskaja V.D., Koba V.S., Lebedev V.N.,<br />

Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />

Serdega B.K. – Effect of surface condition on strain in semiconductor<br />

crystal sample. – Nikitenko E.V., Prikhodenko V.I.; 4(1),<br />

9–11.<br />

Serdega B.K. – See Vakulenko O.V., Kondratenko S.V.; 4(3), 159–<br />

162.<br />

Shekhovtsov L.V. – Some features of transverse photovoltage<br />

in semiconductor heterostructure and Schottky contact; 4(4),<br />

253–259.<br />

Shepeliavyi P.E.– See Chegel’ V.I., Shirshov Yu.M., Kostyukevich<br />

S.O., Chegel’ Yu.V.; 4(4), 301–306.<br />

Shepeliavyi P.E. – See Kostyukevych S.A., Moskalenko N.L.,<br />

Girnyk V.I., Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–73.<br />

Shepelyavyi P.E. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />

S.I., Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A.,<br />

Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />

Shershykov V.M. – See Andryuschenko L.A., Goriletsky V.I.,<br />

Grinyov B.V., Gavrilyuk V.P., Zosim D.I., Skripkina V.T.; 4(2),<br />

126–130.<br />

Shirshov Yu.M. – See Berezhinsky L.I., Chegel’ V.I., Dovbeshko<br />

G.I., Melnichuk O.V.; 4(4), 343–346.<br />

Shirshov Yu.M. – See Chegel’ V.I., Kostyukevich S.O., Shepeliavy<br />

P.E., Chegel’ Yu.V.; 4(4), 301–306.


Shirshov Yu.M. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />

Repnytska O.P., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />

202–206.<br />

Shirshov Yu.M. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />

S.I., Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A.,<br />

Shepelyavyj P.E., Kostyukevich S.A., Venger E.F.; 4(1), 56–<br />

69.<br />

Shmatko G.G. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />

R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko A.P.,<br />

Starchik M.I., Sugakov V.I.; 4(3), 152–155.<br />

Shmyryeva A.N. – See Semikina T.V.; 4(4), 312–317.<br />

Skripkina V.T. – See Andryuschenko L.A., Goriletsky V.I., Grinyov<br />

B.V., Gavrilyuk V.P., Zosim D.I., Shershykov V.M.; 4(2), 126–<br />

130.<br />

Slominskii Yu. – See Camorani P., Furier M., Kachkovskii O.,<br />

Piryatinskiy Yu., Nazarenko V.; 4(3), 229–238.<br />

Snopok B.A. – Venger Optical biosensors based on the surface<br />

plasmon resonance phenomenon: optimization of the metal<br />

layer parameters. – Kostyukevich K.V., Lysenko S.I., Lytvyn<br />

P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj<br />

P.E., Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1),<br />

56–69.<br />

Sobolev V.D. – See Karachevtseva L.A., Lytvynenko O.A.,<br />

Malovichko E.A., Stronska O.J.; 4(1), 40–43.<br />

Sobolev V.D. – See Karachevtseva L.A., Lytvynenko O.A.,<br />

Malovichko E.A., Stronska O.J.; 4(3), 177–181.<br />

Soininen E.L. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />

Z.L., Kopytko Yu.V., Veligura L.I., Törnqvist R.O., Vasama<br />

K.M.; 4(1), 48–55.<br />

Soloviev E.A. – See Boltovets N.S., Ivanov V.N., Konakova R.V.,<br />

Kurakin A.M., Milenin V.V., Verimeychenko G.M.; 4(2), 93–<br />

105.<br />

Soskin M. – See Anokhov S., Khizhnyak A., Lymarenko R.; 4(3),<br />

239–247.<br />

Stadnyk O.A. – See Nesterenko B.O., Kazantseva Z.I., de Rossi<br />

D., Kalchenko V.I.; 4(1), 29–33.<br />

Starchik M.I. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />

R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko A.P.,<br />

Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />

Strilchuk O.N. – See Litovchenko N.M., Prokhorovich A.V.;<br />

4(3), 168–170.<br />

Strilchuk O.N. – See Litovchenko N.M., Prokhorovich A.V.;<br />

4(3), 171–172.<br />

Stronska O.J. – See Karachevtseva L.A., Lytvynenko O.O.,<br />

Malovichko E.O., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />

351.<br />

Stronska O.J. – See Karachevtseva L.A., Lytvynenko O.A.,<br />

Malovichko E.A., Sobolev V.D.; 4(1), 40–43.<br />

Stronska O.J. – See Karachevtseva L.A., Lytvynenko O.A.,<br />

Malovichko E.A., Sobolev V.D.; 4(3), 177–181.<br />

Stronski A.V. – Fourier Raman spectroscopy studies of the<br />

As 40 S 60-x Se x glasses. – Vlèek M., Oleksenko P.F.; 4(3), 210–<br />

213.<br />

Stronski A.V. – Some peculiarities of the mechanism of irreversible<br />

photostructural transformations in thin As-S-Se layers; 4(2),<br />

111–117.<br />

Svechnikov S.V. – See Fedorenko L.L., Kiseleov V.S., Yusupov<br />

M.M., Beketov G.V.; 4(3), 192–195.<br />

Svetlichny A.M. – See Agueev O.A.; 4(4), 307–312.<br />

Sugakov V.I. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />

R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko A.P.,<br />

Starchik M.I., Shmatko G.G.; 4(3), 152–155.<br />

Sugakov V.I. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />

Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Litovchenko<br />

O.P., Lastovetsky V.F., Dubovy V.K.; 4(2), 85–90.<br />

Sukhoivanov I.A. – See Lysak V.V., Petrov S.I.; 4(4), 389–390<br />

T<br />

Tagiyev T.B. – See Pashayev A.M., Gadjiyev A.R., Abbasova T.M.;<br />

4(4), 287–289.<br />

© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />

Tartachnyk V. – See Kakazej M., Kudin A., Pinkovs’ka M.; 4(4),<br />

264–272.<br />

Tartachnyk V.P. – See Kudin A.P., Kuts V.I., Litovchenko P.G.,<br />

Pinkovska M.B.; 4(3), 156–159.<br />

Titskaja V.D. – See Senchishin V.G., Borisenko A.Yu., Koba V.S.,<br />

Lebedev V.N., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />

Todor I.M. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />

Repnytska O.P., Shirshov Y.M., Tryndiak V.P., Zynio S.A.;<br />

4(3), 202–206.<br />

Tryndiak V.P. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />

Repnytska O.P., Shirshov Y.M., Todor I.M., Zynio S.A.; 4(3),<br />

202–206.<br />

Tverdokhleb I.V. – See Kostyukevych S.A., Moskalenko N.L.,<br />

Shepeliavyi P.E., Girnyk V.I., Ivanovsky A.A.; 4(1), 70–73.<br />

Tyagulski I.P. – See Lysenko V.S., Gomeniuk Y.V., Osiyuk I.N.;<br />

4(2), 75–81.<br />

Tzyrkunov Yu.A. – See Lytvyn O.S., Khomchenko V.S., Kryshtab<br />

T.G., Lytvyn P.M., Mazin M.O., Prokopenko I.V., Rodionov<br />

V.Ye.; 4(1), 19–23.<br />

Törnqvist R.O. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />

Z.L., Kopytko Yu.V., Veligura L.I., Soininen El., Vasama K.M.;<br />

4(1), 48–55.<br />

V<br />

Vakulenko O.V. – Spectral dependence of the photomagnetic<br />

effect in porous silicon. – Kondratenko S.V., Serdega B.K.; 4(3),<br />

159–162.<br />

Valakh M.Ya. – See Avramenko S.F., Kiselev V.S., Romanyuk B.N.;<br />

4(4), 249–252.<br />

Valakh M.Ya. – See Kunets V.P., Yukhymchuk V.O.; 4(3), 196–<br />

198.<br />

Varnina V.I. – See Groza A.A., Venger E.F., Holiney R.Yu.,<br />

Litovchenko P.G., Matveeva L.A., Litovchenko A.P., Starchik<br />

M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />

Vasama K.M. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />

Z.L., Kopytko Yu.V., Veligura L.I., Soininen El., Törnqvist R.O.;<br />

4(1), 48–55.<br />

Vasetskii V.M. – Degenerate four-wave mixing in n-Ge due to<br />

intervalley redistribution of hot electrons. – Poroshin V.N.,<br />

Ignatenko V.A.; 4(4), 260–263.<br />

Veligura L.I. – See Vlasenko N.A., Kononets Ya.F., Denisova Z.L.,<br />

Kopytko Yu.V., Soininen El., Törnqvist R.O., Vasama K.M.;<br />

4(1), 48–55.<br />

Venger E.F. – See Baranskii P.I., Babich V.M.; 4(1), 1–4.<br />

Venger E.F. – See Groza A.A., Varnina V.I., Holiney R.Yu.,<br />

Litovchenko P.G., Matveeva L.A., Litovchenko A.P., Starchik<br />

M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />

Venger E.F. – See Kirillova S.I., Primachenko V.E., Chernobai<br />

V.A.; 4(1), 12–18.<br />

Venger E.F. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />

Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj<br />

P.E., Kostyukevich S.A., Shirshov Yu.M.; 4(1), 56–69.<br />

Verimeychenko G.M. – See Boltovets N.S., Ivanov V.N.,<br />

Konakova R.V., Kurakin A.M., Milenin V.V., Soloviev E.A.;<br />

4(2), 93–105.<br />

Veskliarskii R.Z. – See Semchuk O.Yu., Kosharskii K.G.; 4(4),<br />

337–342.<br />

Vlasenko N.A. – Aging of ZnS:Mn thin-film electroluminescent<br />

devices grown by two different atomic-layer epitaxial processes.<br />

– Kononets Ya.F., Denisova Z.L., Kopytko Yu.V., Veligura<br />

L.I., Soininen El., Törnqvist R.O., Vasama K.M.; 4(1), 48–55.<br />

Vlèek M. – See Stronski A.V., Oleksenko P.F.; 4(3), 210–213.<br />

Voitsikhovskyi D.I. – See Boltovets N.S., Konakova R.V., Milenin<br />

V.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />

318–322.<br />

Voitsikhovskyi D.I. – See Konakova R.V., Milenin V.V., Kamalov<br />

A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn O.S., Matveeva<br />

L.A., Prokopenko I.V.; 4(4), 298–300.<br />

Volkov S.G. – See Evtukh A.A., Litovchenko V.G., Oberemok<br />

A.S., Popov V.G., Rassamakin Yu.V., Romanyuk B.N.; 4(4),<br />

278–282.<br />

399


W<br />

Wahl W. – See Litovchenko P.G., Groza A.A., Dolgolenko A.P.,<br />

Karpenko A.Ya., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />

V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />

Willander M. – See Semchuk O.Yu., Karlsteen M.; 4(2), 106–110.<br />

Y<br />

Yakovyna V.S. – The impact of laser shock waves on anodic<br />

oxide – compound semiconductor interface. – Berchenko N.N.,<br />

Nikiforov Yu.N.; 4(4), 283–286.<br />

Yanchuk Z.Z. – See Gubanov O.V., Kulakovs’kij V.D., Poveda<br />

R.A.; 4(3), 207–209.<br />

Yanchuk Z.Z. – See Gubanov V.O., Kulakovs’kij V.D., Poveda<br />

R.A.; 4(4), 391–393.<br />

Yaremyk R.Y. – See Bilyi O.I., Kiselyov Y.M., Novikov V.P.; 4(3),<br />

224–229.<br />

Yukhymchuk V.O. – See Kunets V.P., Valakh M.Ya.; 4(3), 196–<br />

198.<br />

Yusupov M.M. – See Fedorenko L.L., Kiseleov V.S., Svechnikov<br />

S.V., Beketov G.V.; 4(3), 192–195.<br />

Z<br />

Zagoruiko Yu.A. – See Fedorov A.G., Fedorenko O.A., Kovalenko<br />

N.O., 4(2), 118–122.<br />

Zakirov R.M. – See Baschenko S.M., Gochelashvili K.S., Klimov<br />

V.I., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–297.<br />

Zosim D.I. – See Andryuschenko L.A., Goriletsky V.I., Grinyov<br />

B.V., Gavrilyuk V.P., Skripkina V.T., Shershykov V.M.; 4(2),<br />

126–130.<br />

Zynyo S.A. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />

Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Shepelyavyj P.E.,<br />

Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />

Zynio S.A. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />

Repnytska O.P., Shirshov Y.M., Tryndiak V.P., Todor I.M.;<br />

4(3), 202–206.<br />

400<br />

© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!