Author Index - Semiconductor Physics, Quantum Electronics ...
Author Index - Semiconductor Physics, Quantum Electronics ...
Author Index - Semiconductor Physics, Quantum Electronics ...
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
<strong>Semiconductor</strong> <strong>Physics</strong>, <strong>Quantum</strong> <strong>Electronics</strong> &<br />
Optoelectronics<br />
Autor <strong>Index</strong> 2001 (Volume 4)<br />
394<br />
A<br />
Abbasova T.M. – See Pashayev A.M., Gadjiyev A.R., Tagiyev<br />
T.B.; 4(4), 287–289.<br />
Adadurov A.F. – See Senchishin V.G., Borisenko A.Yu., Titskaja<br />
V.D., Koba V.S., Lebedev V.N., Osadchenko V.N.; 4(2), 123–<br />
125.<br />
Agaev F.G. – Short-wave photodetectors based on fine grain-sized<br />
poly-Si films; 4(2), 91–92.<br />
Agueev O.A. – The influence of heating temperature and sizes of<br />
components upon stresses and defect formation in semiconductor<br />
structures under isothermal heating. – Svetlichny A.M.;<br />
4(4), 307–312.<br />
Andryuschenko L.A. – Organosilicon luminencent compositions<br />
for scintillation detectors. – Goriletsky V.I., Grinyov B.V.,<br />
Gavrilyuk V.P., Zosim D.I., Skripkina V.T., Shershykov V.M.;<br />
4(2), 126–130.<br />
Anokhov S. – Singular peculiarities of a plane wave diffracted on<br />
half-plane. – Khizhnyak A., Lymarenko R., Soskin M.; 4(3),<br />
239–247.<br />
Anokhov S. – New method of apertured electromagnetic field<br />
modeling. – Khizhnyak A., Lymarenko R.; 4(4), 383–388.<br />
Avramenko S.F. – Study of postimplantation annealing of SiC. –<br />
Kiselev V.S., Romanyuk B.N., Valakh M.Ya.; 4(4), 249–252.<br />
B<br />
Babich V.M. – See Baranskii P.I., Venger E.F.; 4(1), 1–4.<br />
Baranskii P.I. – Development of the physical insight into the<br />
nature of the factors that control electrophysical and<br />
other properties of semiconductors. – Babich V.M., Venger E.F.;<br />
4(1), 1–4.<br />
Baschenko S.M. – Investigation of ArF* excimer laser VUV radiation<br />
action on sapphire. – Gochelashvili K.S., Zakirov R.M.,<br />
Klimov V.I., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–<br />
297.<br />
Beketov G.V. – See Fedorenko L.L., Kiseleov V.S., Svechnikov<br />
S.V., Yusupov M.M.; 4(3), 192–195.<br />
Belenko L.E. – See Goriletsky V.I., Mitichkin A.I., Rebrova T.P.;<br />
4(2), 139–141.<br />
Berchenko N.N. – See Yakovyna V.S., Nikiforov Yu.N.; 4(4),<br />
283–286.<br />
Berezhinsky L.I. – Microwave-induced optical non-linearity of<br />
amino acid crystals. – Dovbeshko G.I., Obukhovsky V.V.; 4(4),<br />
331–336.<br />
Berezhinsky L.I. – SPR-spectroscopy of protein molecule adsorbed<br />
in microwave field. – Chegel’ V.I., Shirshov Yu.M., Dovbeshko<br />
G.I., Melnichuk O.V.; 4(4), 343–346.<br />
Bilyi O.I. – Algorithm of microchip operation for controlling<br />
parameters of a latex agglutination reaction. – Yaremyk R.Y.,<br />
Kiselyov Y.M., Novikov V.P.; 4(3), 224–229.<br />
Bobitski Y.W. – Coupling between propagated modes in optical<br />
fibers with periodical structures. – Fitio V.M., Lebid S.Yu.; 4(3),<br />
219–223.<br />
Bogoboyashchyy V.V. – Density of heavy hole states of Hg 1-x Cd x Te<br />
in an isotropic nonparabolic approximation by exact measurements<br />
of electron concentration; 4(4), 273–277.<br />
Boltovets N.S. – Comprehensive studies of defect production and<br />
strained states in silicon epitaxial layers and device structures<br />
based on them. – Voitsikhovskyi D.I., Konakova R.V., Milenin<br />
V.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />
318–322.<br />
Boltovets N.S. – Technology and experimental studies of contacts<br />
for microwave diodes based on interstitial phases. – Ivanov<br />
V.N., Konakova R.V., Kurakin A.M., Milenin V.V., Soloviev<br />
E.A., Verimeychenko G.M.; 4(2), 93–105.<br />
Bondar’ V.G. – GSO: Ce 3+ scintillator with a high energy resolution.<br />
– Gavrilyuk V.P., Konevskii V.S., Krivonosov E.V.,<br />
Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />
Borisenko A.Yu. – See Senchishin V.G., Titskaja V.D., Koba V.S.,<br />
Lebedev V.N., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />
Borkovskaya L.V. – Silver-related local centres in cadmium sulfide. –<br />
Bulakh B.M., Khomenkova L.Yu., Markevich I.V.; 4(3), 163–<br />
167.<br />
Bulakh B.M. – See Borkovskaya L.V., Khomenkova L.Yu.,<br />
Markevich I.V.; 4(3), 163–167.<br />
Busaneva E.V. – See Karachevtseva L.A., Lytvynenko O.O.,<br />
Malovichko E.O., Stronska O.J., Gorchinsky O.D.; 4(4), 347–<br />
351.<br />
© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />
C<br />
Camorani P. – Absorption spectra and chromonic phase in aqueous<br />
solution of perylenetetracarboxylic bisimides derivatives. –<br />
Furier M., Kachkovskii O., Piryatinskiy Yu., Slominskii Yu.,<br />
Nazarenko V.; 4(3), 229–238.<br />
Chegel V.I. – See Dovbeshko G.I., Gridina N.Y., Repnytska O.P.,<br />
Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />
202–206.<br />
Chegel’ V.I. – Experimental investigations and computer modelling<br />
of the photochemical processes in Ag-As 2 S 3 structures<br />
using surface plasmon resonance spectroscopy. – Shirshov<br />
Yu.M., Kostyukevich S.O., Shepeliavyi P.E., Chegel’ Yu.V.; 4(4),<br />
301–306.<br />
Chegel’ V.I. – See Berezhinsky L.I., Shirshov Yu.M., Dovbeshko<br />
G.I., Melnichuk O.V.; 4(4), 343–346.<br />
Chegel’ Yu.V. – See Chegel’ V.I., Shirshov Yu.M., Kostyukevich<br />
S.O., Shepeliavyi P.E.; 4(4), 301–306.<br />
Chernobai V.A. – See Kirillova S.I., Venger E.F., Primachenko<br />
V.E.; 4(1), 12–18.
D<br />
Datsenko L.I. – Complex diffractometrical investigation of structural<br />
and compositional irregularities in GaAs:Si/GaAs films<br />
heavily doped with silicon. – Klad’ko V.P., Lytvyn P.M.,<br />
Domagala J., Machulin V.F., Prokopenko I.V., Molodkin V.B.,<br />
Maksimenko Z.V.; 4(3), 146–151.<br />
Davidenko I.I. – Features of photoinduced charge transfer in<br />
photomagnetic garnets YIG:Si and YIG:Co. – 4(3), 173–176.<br />
Denisova Z.L. – See Vlasenko N.A., Kononets Ya.F., Kopytko<br />
Yu.V., Veligura L.I., Soininen El., Törnqvist R.O., Vasama K.M.;<br />
4(1), 48–55.<br />
Dolgolenko A.P. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />
Karpenko A.Ya., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />
V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />
Domagala J. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />
Machulin V.F., Prokopenko I.V., Molodkin V.B., Maksimenko<br />
Z.V.; 4(3), 146–151.<br />
Dovbeshko G.I. – See Berezhinsky L.I., Chegel’ V.I., Shirshov<br />
Yu.M., Melnichuk O.V.; 4(4), 343–346.<br />
Dovbeshko G.I. – See Berezhinsky L.I., Obukhovsky V.V.; 4(4),<br />
331–336.<br />
Dovbeshko G.I. – Surface enhanced infrared absorption of nucleic<br />
acids on gold substrate. – Chegel V.I., Gridina N.Y., Repnytska<br />
O.P., Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.;<br />
4(3), 202–206.<br />
Dubovy V.K. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />
Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Litovchenko<br />
O.P., Lastovetsky V.F., Sugakov V.I.; 4(2), 85–90.<br />
E<br />
Efremov A.A. – See Litovchenko V.G., Evtukh A.A., Rassamakin<br />
Yu.V., Klyui M.I., Kostylov V.P.; 4(2), 82–84.<br />
Evtukh A.A. – See Litovchenko V.G., Efremov A.A., Rassamakin<br />
Yu.V., Klyui M.I., Kostylov V.P.; 4(2), 82–84.<br />
Evtukh A.A. – Investigations of impurity gettering in<br />
multicrystalline silicon. – Litovchenko V.G., Oberemok A.S.,<br />
Popov V.G., Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.;<br />
4(4), 278–282.<br />
F<br />
Fedorenko L.L. – Refractory contact to α-SiC produced by laser<br />
technology methods. – Kiseleov V.S., Svechnikov S.V., Yusupov<br />
M.M., Beketov G.V.; 4(3), 192–195.<br />
Fedorenko O.A. – See Fedorov A.G., Zagoruiko Yu.A., Kovalenko<br />
N.O., 4(2), 118–122.<br />
Fedorov A.G. – X-ray characterization of ZnSe single crystals doped<br />
with Mg. – Zagoruiko Yu.A., Fedorenko O.A., Kovalenko N.O.,<br />
4(2), 118–122.<br />
Fitio V.M. – See Bobitski Y.W., Lebid S.Yu.; 4(3), 219–223.<br />
Freik D.M. – Crystallochemistry of defects in lead telluride films. –<br />
Ruvinskii M.A., Ruvinskii B.M., Galushchak M.A.; 4(1), 5–8.<br />
Furier M. – See Piryatinskiy Yu., Nazarenko V.; 4(2), 142–145.<br />
Furier M. – See Camorani P., Kachkovskii O., Piryatinskiy Yu.,<br />
Slominskii Yu., Nazarenko V.; 4(3), 229–238.<br />
Furier M.S. – See Piryatinski Yu.P., Nazarenko V.G.; 4(4), 375–<br />
382.<br />
G<br />
Gadjiyev A.R. – See Pashayev A.M., Tagiyev T.B., Abbasova T.M.;<br />
4(4), 287–289.<br />
Galushchak M.A. – See Freik D.M., Ruvinskii B.M., Ruvinskii<br />
M.A.; 4(1), 5–8.<br />
Gavrilyuk V.P. – See Andryuschenko L.A., Goriletsky V.I., Grinyov<br />
B.V., Zosim D.I., Skripkina V.T., Shershykov V.M.; 4(2), 126–<br />
130.<br />
Gavrilyuk V.P. – See Bondar’ V.G., Konevskii V.S., Krivonosov<br />
E.V., Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />
© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />
Girnyk V.I. – See Kostyukevych S.A., Moskalenko N.L.,<br />
Shepeliavyi P.E., Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–<br />
73.<br />
Gnatovsky O. – Study of photorefractive effect in crystals<br />
Pb 5 Ge 3 O 11 :Cu and Pb 5 Ge 3 O 11 . – Linnik V., Pryadko L.; 4(3),<br />
199–201.<br />
Gochelashvili K.S. – See Baschenko S.M., Zakirov R.M., Klimov<br />
V.I., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–297.<br />
Gomeniuk Y.V. – See Lysenko V.S., Tyagulski I.P., Osiyuk I.N.;<br />
4(2), 75–81.<br />
Gorchinsky O.D. – See Karachevtseva L.A., Lytvynenko O.O.,<br />
Malovichko E.O., Stronska O.J., Busaneva E.V.; 4(4), 347–<br />
351.<br />
Goriletsky V.I. – IR spectroscopy of KBr salt and crystals. –<br />
Mitichkin A.I., Belenko L.E., Rebrova T.P.; 4(2), 139–141.<br />
Goriletsky V.I. – See Andryuschenko L.A., Grinyov B.V., Gavrilyuk<br />
V.P., Zosim D.I., Skripkina V.T., Shershykov V.M.; 4(2), 126–<br />
130.<br />
Gridina N.Y. – See Dovbeshko G.I., Chegel V.I., Repnytska O.P.,<br />
Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />
202–206.<br />
Grigorchuk N.I. – Influence of phonon dispersion on exciton<br />
damping in ionic crystals; 4(4), 323–330.<br />
Grinyov B.V. – See Andryuschenko L.A., Goriletsky V.I., Gavrilyuk<br />
V.P., Zosim D.I., Skripkina V.T., Shershykov V.M.; 4(2), 126–<br />
130.<br />
Groza A.A. – Influence of neutron irradiation on elctrooptical and<br />
structural properties of silicon. – Venger E.F., Varnina V.I.,<br />
Holiney R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko<br />
A.P., Starchik M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–<br />
155.<br />
Groza A.A. – See Litovchenko P.G., Wahl W., Dolgolenko A.P.,<br />
Karpenko A.Ya., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />
V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />
Gubanov V.O. – Raman scattering of light in biaxial<br />
monocline β-ZnP 2 crystals. – Kulakovs’kij V.D., Poveda R.A.,<br />
Yanchuk Z.Z.; 4(4), 391–393.<br />
Güttler H. – See Romanyuk A., Popov V.; 4(3), 187–191.<br />
H<br />
Holiney R.Yu. – See Groza A.A., Venger E.F., Varnina V.I.,<br />
Litovchenko P.G., Matveeva L.A., Litovchenko A.P., Starchik<br />
M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />
I<br />
Ignatenko V.A. – See Vasetskii V.M., Poroshin V.N.; 4(4), 260–<br />
263.<br />
Ivanov V.N. – See Boltovets N.S., Konakova R.V., Kurakin A.M.,<br />
Milenin V.V., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–<br />
105.<br />
Ivanovsky A.A. – See Kostyukevych S.A., Moskalenko N.L.,<br />
Shepeliavyi P.E., Girnyk V.I., Tverdokhleb I.V.; 4(1), 70–73.<br />
K<br />
Kachkovskii O. – See Camorani P., Furier M., Piryatinskiy Yu.,<br />
Slominskii Yu., Nazarenko V.; 4(3), 229–238.<br />
Kakazej M. – Behaviour of manganese impurity in β-ZnP 2 . –<br />
Kudin A., Pinkovs’ka M., Tartachnyk V.; 4(4), 264–272.<br />
Kalchenko V.I. – See Nesterenko B.O., Kazantseva Z.I., Stadnyk<br />
O.A., de Rossi D.; 4(1), 29–33.<br />
Kamalov A.B. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />
D.I., Kolyadina E.Yu., Lytvyn P.M., Lytvyn O.S., Matveeva<br />
L.A., Prokopenko I.V.; 4(4), 298–300.<br />
Karachevtseva L.A. – Bolometric characteristics of macroporous<br />
silicon structures. – Lytvynenko O.A., Malovichko E.A.,<br />
Sobolev V.D., Stronska O.J.; 4(3), 177–181.<br />
Karachevtseva L.A. – Electrical properties of macroporous silicon<br />
structures. – Lytvynenko O.A., Malovichko E.A.,<br />
Sobolev V.D., Stronska O.J.; 4(1), 40–43.<br />
395
Karachevtseva L.A. – Optical transmittance of 2D macroporous<br />
silicon structures. – Lytvynenko O.O., Malovichko E.O.,<br />
Stronska O.J., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />
351.<br />
Karlsteen M. – See Semchuk O.Yu., Willander M.; 4(2), 106–110.<br />
Karpenko A.Ya. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />
Dolgolenko A.P., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />
V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />
Kazantseva Z.I. – See Nesterenko B.O., Stadnyk O.A., de Rossi D.,<br />
Kalchenko V.I.; 4(1), 29–33.<br />
Khivrych V.I. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />
Dolgolenko A.P., Karpenko A.Ya., Litovchenko O.P.,<br />
Lastovetsky V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />
Khizhnyak A. – See Anokhov S., Lymarenko R., Soskin M.; 4(3),<br />
239–247.<br />
Khizhnyak A. – See Anokhov S., Lymarenko R.; 4(4), 383–388.<br />
Khomenkova L.Yu. – See Borkovskaya L.V., Bulakh B.M.,<br />
Markevich I.V.; 4(3), 163–167.<br />
Khomchenko V.S. – See Lytvyn O.S., Kryshtab T.G., Lytvyn P.M.,<br />
Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />
Yu.A.; 4(1), 19–23.<br />
Kirillova S.I. – Electronic properties of silicon surface at different<br />
oxide film conditions – Primachenko V.E., Venger E.F.,<br />
Chernobai V.A.; 4(1), 12–18.<br />
Kiseleov V.S. – See Fedorenko L.L., Svechnikov S.V., Yusupov<br />
M.M., Beketov G.V.; 4(3), 192–195.<br />
Kiselev V.S. – See Avramenko S.F., Romanyuk B.N., Valakh M.Ya.;<br />
4(4), 249–252.<br />
Kiselyov Y.M. – See Bilyi O.I., Yaremyk R.Y., Novikov V.P.; 4(3),<br />
224–229.<br />
Klad’ko V.P. – See Datsenko L.I., Lytvyn P.M., Domagala J.,<br />
Machulin V.F., Prokopenko I.V., Molodkin V.B., Maksimenko<br />
Z.V.; 4(3), 146–151.<br />
Klimov V.I. – See Baschenko S.M., Gochelashvili K.S., Zakirov<br />
R.M., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–297.<br />
Klyui M.I. – See Litovchenko V.G., Efremov A.A., Evtukh A.A.,<br />
Rassamakin Yu.V., Kostylov V.P.; 4(2), 82–84.<br />
Klyui N.I. – See Rozhin A.G., Litovchenko V.G., Melnik V.P.,<br />
Romanyuk B.N., Piryatinskii Yu.P.; 4(1), 44–47.<br />
Koba V.S. – See Senchishin V.G., Borisenko A.Yu., Titskaja V.D.,<br />
Lebedev V.N., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />
Kolyadina E.Yu. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />
D.I., Kamalov A.B., Lytvyn P.M., Lytvyn O.S., Matveeva L.A.,<br />
Prokopenko I.V.; 4(4), 298–300.<br />
Konakova R.V. – Ordering of lateral nonuniformity of TiB x film<br />
and transition layer in the TiB x -GaAs system. – Milenin V.V.,<br />
Voitsikhovskyi D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn<br />
P.M., Lytvyn O.S., Matveeva L.A., Prokopenko I.V.; 4(4), 298–<br />
300.<br />
Konakova R.V. – See Boltovets N.S., Ivanov V.N., Kurakin A.M.,<br />
Milenin V.V., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–<br />
105.<br />
Konakova R.V. – See Boltovets N.S., Voitsikhovskyi D.I., Milenin<br />
V.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />
318–322.<br />
Kondratenko S.V. – See Vakulenko O.V., Serdega B.K.; 4(3), 159–<br />
162.<br />
Konevskii V.S. – See Bondar’ V.G., Gavrilyuk V.P., Krivonosov<br />
E.V., Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />
Kononets Ya.F. – See Vlasenko N.A., Denisova Z.L., Kopytko<br />
Yu.V., Veligura L.I., Soininen El., Törnqvist R.O., Vasama K.M.;<br />
4(1), 48–55.<br />
Kopytko Yu.V. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />
Z.L., Veligura L.I., Soininen El., Törnqvist R.O., Vasama K.M.;<br />
4(1), 48–55.<br />
Korovin A.V. – Difference harmonic generation due to spin-flip<br />
transitions in an asymmetric quantum well; 4(1), 34–39.<br />
Kosharskii K.G. – See Semchuk O.Yu., Veskliarskii R.Z.; 4(4),<br />
337–342.<br />
Kostylov V.P. – See Litovchenko V.G., Efremov A.A., Evtukh<br />
A.A., Rassamakin Yu.V., Klyui M.I.; 4(2), 82–84.<br />
396<br />
Kostyukevich K.V. – See Snopok B.A., Lysenko S.I., Lytvyn P.M.,<br />
Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj P.E.,<br />
Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />
Kostyukevich S.A. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />
S.I., Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A.,<br />
Shepelyavyi P.E., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />
Kostyukevich S.A. – Using non-oranic resist based on As-S-Se<br />
chalcogenide glasses for combined optical/digital security devices.<br />
– Moskalenko N.L., Shepeliavyi P.E., Girnyk V.I.,<br />
Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–73.<br />
Kostyukevich S.O. – See Chegel’ V.I., Shirshov Yu.M., Shepeliavy<br />
P.E., Chegel’ Yu.V.; 4(4), 301–306.<br />
Kovalenko N.O. – See Fedorov A.G., Zagoruiko Yu.A., Fedorenko<br />
O.A., 4(2), 118–122.<br />
Kovalenko S.A. – Descartes-Snell law of refraction with absorption;<br />
4(3), 214–218.<br />
Kovalenko S.A. – Thickness dependences of optical constants<br />
for thin layers of some metals and semiconductors. – Lisitsa<br />
M.P.; 4(4), 352–357.<br />
Krivonosov E.V. – See Bondar’ V.G., Gavrilyuk V.P., Konevskii<br />
V.S., Martynov V.P., Savvin Yu.N.; 4(2), 131–133.<br />
Kryshtab T.G. – See Lytvyn O.S., Khomchenko V.S., Lytvyn P.M.,<br />
Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />
Yu.A.; 4(1), 19–23.<br />
Kudin A.P. – Influence of structural defects on photoconductivity<br />
of zinc diphosphide. – Kuts V.I., Litovchenko P.G., Pinkovska<br />
M.B., Tartachnyk V.P.; 4(3), 156–159.<br />
Kudin A. – See Kakazej M., Pinkovs’ka M., Tartachnyk V.; 4(4),<br />
264–272.<br />
Kulakovs’kij V.D. – See Gubanov V.O., Poveda R.A., Yanchuk<br />
Z.Z.; 4(4), 391–393.<br />
Kunets V.P. – Optical investigations of thermostimulated changes<br />
in an ensemble of CdS x Se 1-x quantum dots embedded into<br />
borosilicate glass matrix. – Yukhymchuk V.O., Valakh M.Ya.;<br />
4(3), 196–198.<br />
Kurakin A.M. – See Boltovets N.S., Ivanov V.N., Konakova R.V.,<br />
Milenin V.V., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–105.<br />
Kuts V.I. – See Kudin A.P., Litovchenko P.G., Pinkovska M.B.,<br />
Tartachnyk V.P.; 4(3), 156–159.<br />
© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />
L<br />
Lastovetsky V.F. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />
Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Litovchenko<br />
O.P., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />
Lebedev V.N. – See Senchishin V.G., Borisenko A.Yu., Titskaja V.D.,<br />
Koba V.S., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />
Lebid S.Yu. – See Bobitski Y.W., Fitio V.M.; 4(3), 219–223.<br />
Lemeshko V.V. – Dynamics of photoinduced instability in<br />
ferroelectric photorefractive crystals. – Morozovska A.N.,<br />
Obukhovsky V.V.; 4(4), 358–374.<br />
Linnik V. – Study of photorefractive effect in crystals Pb 5 Ge 3 O 11 :Cu<br />
and Pb 5 Ge 3 O 11 . – Gnatovsky O., Pryadko L.; 4(3), 199–201.<br />
Lisitsa M.P. – See Kovalenko S.A.; 4(4), 352–357.<br />
Litovchenko A.P. – See Groza A.A., Venger E.F., Varnina V.I.,<br />
Holiney R.Yu., Litovchenko P.G., Matveeva L.A., Starchik M.I.,<br />
Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />
Litovchenko N.M. – About influences of different actions on spectra<br />
of impurity photoluminescence in GaAs. – Prokhorovich<br />
A.V., Strilchuk O.N.; 4(3), 168–170.<br />
Litovchenko N.M. – Stimulated by heating-up changes of luxbrightness<br />
characteristics of semi-insulating specially undoped<br />
GaAs crystals. – Prokhorovich A.V., Strilchuk O.N.; 4(3), 171–<br />
172.<br />
Litovchenko O.P. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />
Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Lastovetsky<br />
V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />
Litovchenko P.G. – Influence of preliminary irradiation on radiation<br />
hardness of silicon and indium antimonide. – Wahl W.,<br />
Groza A.A., Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I.,<br />
Litovchenko O.P., Lastovetsky V.F., Sugakov V.I., Dubovy V.K.;<br />
4(2), 85–90.
Litovchenko P.G. – See Groza A.A., Venger E.F., Varnina V.I.,<br />
Holiney R.Yu., Matveeva L.A., Litovchenko A.P., Starchik<br />
M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />
Litovchenko P.G. – See Kudin A.P., Kuts V.I., Pinkovska M.B.,<br />
Tartachnyk V.P.; 4(3), 156–159.<br />
Litovchenko V.G. – Increase of planar homogeneity of multisilicon<br />
structures by gettering treatments. – Efremov A.A.,<br />
Evtukh A.A., Rassamakin Yu.V., Klyui M.I., Kostylov V.P.; 4(2),<br />
82–84.<br />
Litovchenko V.G. – See Evtukh A.A., Oberemok A.S., Popov<br />
V.G., Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.; 4(4),<br />
278–282.<br />
Litovchenko V.G. – See Rozhin A.G., Klyui N.I., Melnik V.P.,<br />
Romanyuk B.N., Piryatinskii Yu.P.; 4(1), 44–47.<br />
Lymarenko R. – See Anokhov S., Khizhnyak A., Soskin M.; 4(3),<br />
239–247.<br />
Lymarenko R. – See Anokhov S., Khizhnyak A.; 4(4), 383–388.<br />
Lysak V.V. – Group delay investigation of N-order chirping mirrors.<br />
– Sukhoivanov I.A., Petrov S.I.; 4(4), 389–390<br />
Lysenko S.I. – See Snopok B.A., Kostyukevich K.V., Lytvyn P.M.,<br />
Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyi P.E.,<br />
Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />
Lysenko V.S. – Effect of oxide-semiconductor interface traps on<br />
low-temperature operation of MOSFETs. – Tyagulski I.P.,<br />
Gomeniuk Y.V., Osiyuk I.N.; 4(2), 75–81.<br />
Lytvyn O.S. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />
D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn P.M., Matveeva<br />
L.A., Prokopenko I.V.; 4(4), 298–300.<br />
Lytvyn O.S. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />
Lytvyn P.M., Mamykin S.V., Zynyo S.A., Shepelyavyj P.E.,<br />
Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />
Lytvyn O.S. – Structural investigations of annealed ZnS:Cu, Ga<br />
film phosphors. – Khomchenko V.S., Kryshtab T.G., Lytvyn<br />
P.M., Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />
Yu.A.; 4(1), 19–23.<br />
Lytvyn P.M. – See Datsenko L.I., Klad’ko V.P., Domagala J.,<br />
Machulin V.F., Prokopenko I.V., Molodkin V.B., Maksimenko<br />
Z.V.; 4(3), 146–151.<br />
Lytvyn P.M. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />
D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn O.S., Matveeva<br />
L.A., Prokopenko I.V.; 4(4), 298–300.<br />
Lytvyn P.M. – See Lytvyn O.S., Khomchenko V.S., Kryshtab T.G.,<br />
Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />
Yu.A.; 4(1), 19–23.<br />
Lytvyn P.M. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />
Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj P.E.,<br />
Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />
Lytvynenko O.A. – See Karachevtseva L.A., Malovichko E.A.,<br />
Sobolev V.D., Stronska O.J.; 4(1), 40–43.<br />
Lytvynenko O.A. – See Karachevtseva L.A., Malovichko E.A.,<br />
Sobolev V.D., Stronska O.J.; 4(3), 177–181.<br />
Lytvynenko O.O. – See Karachevtseva L.A., Malovichko E.O.,<br />
Stronska O.J., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />
351.<br />
M<br />
Machulin V.F. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />
Domagala J., Prokopenko I.V., Molodkin V.B., Maksimenko<br />
Z.V.; 4(3), 146–151.<br />
Makara V.A. – See Boltovets N.S., Voitsikhovskyi D.I., Konakova<br />
R.V., Milenin V.V., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />
318–322.<br />
Maksimenko Z.V. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />
Domagala J., Machulin V.F., Prokopenko I.V., Molodkin V.B.;<br />
4(3), 146–151.<br />
Malovichko E.A. – See Karachevtseva L.A., Lytvynenko O.A.,<br />
Sobolev V.D., Stronska O.J.; 4(1), 40–43.<br />
Malovichko E.A. – See Karachevtseva L.A., Lytvynenko O.A.,<br />
Sobolev V.D., Stronska O.J.; 4(3), 177–181.<br />
Malovichko E.O. – See Karachevtseva L.A., Lytvynenko O.O.,<br />
Stronska O.J., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />
351.<br />
Mamykin S.V. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />
S.I., Lytvyn P.M., Lytvyn O.S., Zynyo S.A., Shepelyavyi P.E.,<br />
Kostyukevich S.A., Shirshov Yu.M., E.F. Venger; 4(1), 56–69.<br />
Markevich I.V. – See Borkovskaya L.V., Bulakh B.M., Khomenkova<br />
L.Yu.; 4(3), 163–167.<br />
Martynov V.P. – See Bondar’ V.G., Gavrilyuk V.P., Konevskii V.S.,<br />
Krivonosov E.V., Savvin Yu.N.; 4(2), 131–133.<br />
Matveeva L.A. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />
R.Yu., Litovchenko P.G., Litovchenko A.P., Starchik M.I.,<br />
Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />
Matveeva L.A. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />
D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn<br />
O.S., Prokopenko I.V.; 4(4), 298–300.<br />
Mazin M.O. – See Lytvyn O.S., Khomchenko V.S., Kryshtab T.G.,<br />
Lytvyn P.M., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov<br />
Yu.A.; 4(1), 19–23.<br />
Mel’nichenko M.M. – See Boltovets N.S., Voitsikhovskyi D.I.,<br />
Konakova R.V., Milenin V.V., Makara V.A., Rudenko O.V.; 4(4),<br />
318–322.<br />
Melnichuk O.V. – See Berezhinsky L.I., Chegel’ V.I., Shirshov<br />
Yu.M., Dovbeshko G.I.; 4(4), 343–346.<br />
Melnik V.P. – See Rozhin A.G., Klyui N.I., Litovchenko V.G.,<br />
Romanyuk B.N., Piryatinskii Yu.P.; 4(1), 44–47.<br />
Mikhkelsoo V.T. – See Baschenko S.M., Gochelashvili K.S., Zakirov<br />
R.M., Klimov V.I., Prokhorov O.M.; 4(4), 290–297.<br />
Milenin V.V. – See Boltovets N.S., Ivanov V.N., Konakova R.V.,<br />
Kurakin A.M., Soloviev E.A., Verimeychenko G.M.; 4(2), 93–<br />
105.<br />
Milenin V.V. – See Boltovets N.S., Voitsikhovskyi D.I., Konakova<br />
R.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />
318–322.<br />
Milenin V.V. – See Konakova R.V., Voitsikhovskyi D.I., Kamalov<br />
A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn O.S., Matveeva<br />
L.A., Prokopenko I.V.; 4(4), 298–300.<br />
Mitichkin A.I. – See Goriletsky V.I., Belenko L.E., Rebrova T.P.;<br />
4(2), 139–141.<br />
Molodkin V.B. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />
Domagala J., Machulin V.F., Prokopenko I.V., Maksimenko Z.V.;<br />
4(3), 146–151.<br />
Monastyrskii L.S. – Features of electrical charge transfer in porous<br />
silicon; 4(1), 19–23.<br />
Moskalenko N.L. – See Kostyukevych S.A., Shepeliavyi P.E.,<br />
Girnyk V.I., Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–73.<br />
Morozovska A.N. – Dynamics of photoinduced instability in<br />
ferroelectric photorefractive crystals. – Obukhovsky V.V.,<br />
Lemeshko V.V.; 4(4), 358–374.<br />
N<br />
Nazarenko V. – See Camorani P., Furier M., Kachkovskii O.,<br />
Piryatinskiy Yu., Slominskii Yu.; 4(3), 229–238.<br />
Nazarenko V. – See Piryatinskiy Yu., Furier M.; 4(2), 142–145.<br />
Nazarenko V.G. – See Piryatinski Yu.P., Furier M.S.; 4(4), 375–<br />
382.<br />
Nesterenko B.O. – Dipole properties of the upper rim phosphorylated<br />
calix[4]arenes in the Langmuir–Blodgett films. –<br />
Kazantseva Z.I., Stadnyk O.A., de Rossi D., Kalchenko V.I.;<br />
4(1), 29–33.<br />
Nikiforov Yu.N. – See Yakovyna V.S., Berchenko N.N.; 4(4), 283–<br />
286.<br />
Nikitenko E.V. – See Serdega B.K., Prikhodenko V.I.; 4(1), 9–11.<br />
Novikov V.P. – See Bilyi O.I., Yaremyk R.Y., Kiselyov Y.M.; 4(3),<br />
224–229.<br />
O<br />
Oberemok A.S. – See Evtukh A.A., Litovchenko V.G., Popov V.G.,<br />
Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.; 4(4), 278–282.<br />
© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />
397
Obukhovsky V.V. – See Berezhinsky L.I., Dovbeshko G.I.; 4(4),<br />
331–336.<br />
Obukhovsky V.V. – Dynamics of photoinduced instability in<br />
ferroelectric photorefractive crystals. – Morozovska A.N.,<br />
Lemeshko V.V.; 4(4), 358–374.<br />
Oleksenko P.F. – See Stronski A.V., Vlèek M.; 4(3), 210–213.<br />
Osadchenko V.N. – See Senchishin V.G., Borisenko A.Yu., Titskaja<br />
V.D., Koba V.S., Lebedev V.N., Adadurov A.F.; 4(2), 123–125.<br />
Osiyuk I.N. – See Lysenko V.S., Tyagulski I.P., Gomeniuk Y.V.;<br />
4(2), 75–81.<br />
398<br />
P<br />
Pashayev A.M. – Hopping conductivity in GaSe monocrystals<br />
at low temperatures. – Gadjiyev A.R., Tagiyev T.B., Abbasova<br />
T.M.; 4(4), 287–289.<br />
Pervak V.Yu. – Spectral properties of reflective interference filters.<br />
– Poperenko L.V., Pervak Yu.A.; 4(2), 134–138.<br />
Pervak Yu.A. – See Pervak V.Yu., Poperenko L.V.; 4(2), 134–138.<br />
Petrov S.I. – See Lysak V.V., Sukhoivanov I.A.; 4(4), 389–390<br />
Pinkovs’ka M. – See Kakazej M., Kudin A., Tartachnyk V.; 4(4),<br />
264–272.<br />
Pinkovska M.B. – See Kudin A.P., Kuts V.I., Litovchenko P.G.,<br />
Tartachnyk V.P.; 4(3), 156–159.<br />
Piryatinski Yu.P. – Electrooptical properties of liquid crystal<br />
n-pentil-n′-cyanobifenil with J-aggregates of astrofloxine. –<br />
Furier M.S., Nazarenko V.G.; 4(4), 375–382.<br />
Piryatinskiy Yu. – Photoluminescence of pentacene solutions<br />
in n-pentyl-n′-cyanobiphenyl. – Furier M., Nazarenko V.; 4(2),<br />
142–145.<br />
Piryatinskiy Yu. – See Camorani P., Furier M., Kachkovskii O.,<br />
Slominskii Yu., Nazarenko V.; 4(3), 229–238.<br />
Piryatinskii Yu.P. – See Rozhin A.G., Klyui N.I., Litovchenko<br />
V.G., Melnik V.P., Romanyuk B.N.; 4(1), 44–47.<br />
Poperenko L.V. – See Pervak V.Yu., Pervak Yu.A.; 4(2), 134–138.<br />
Popov V.G. – Characterization of «solar» multicrystalline silicon<br />
by local measurements; 4(3), 182–186.<br />
Popov V.G. – See Evtukh A.A., Litovchenko V.G., Oberemok A.S.,<br />
Rassamakin Yu.V., Romanyuk B.N., Volkov S.G.; 4(4), 278–<br />
282.<br />
Popov V. – See Romanyuk A., Güttler H.; 4(3), 187–191.<br />
Poroshin V.N. – See Vasetskii V.M., Ignatenko V.A.; 4(4), 260–<br />
263.<br />
Poveda R.A. – See Gubanov V.O., Kulakovs’kij V.D., Yanchuk Z.Z.;<br />
4(4), 391–393.<br />
Prikhodenko V.I. – See Serdega B.K., Nikitenko E.V.; 4(1), 9–11.<br />
Primachenko V.E. – See Kirillova S.I., Venger E.F., Chernobai<br />
V.A.; 4(1), 12–18.<br />
Prokhorov O.M. – See Baschenko S.M., Gochelashvili K.S., Zakirov<br />
R.M., Klimov V.I., Mikhkelsoo V.T.; 4(4), 290–297.<br />
Prokhorovich A.V. – See Litovchenko N.M., Strilchuk O.N.; 4(3),<br />
168–170.<br />
Prokhorovich A.V. – See Litovchenko N.M., Strilchuk O.N.; 4(3),<br />
171–172.<br />
Prokopenko I.V. – See Datsenko L.I., Klad’ko V.P., Lytvyn P.M.,<br />
Domagala J., Machulin V.F., Molodkin V.B., Maksimenko Z.V.;<br />
4(3), 146–151.<br />
Prokopenko I.V. – See Konakova R.V., Milenin V.V., Voitsikhovskyi<br />
D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn<br />
O.S., Matveeva L.A.; 4(4), 298–300.<br />
Prokopenko I.V. – See Lytvyn O.S., Khomchenko V.S., Kryshtab<br />
T.G., Lytvyn P.M., Mazin M.O., Rodionov V.Ye., Tzyrkunov<br />
Yu.A.; 4(1), 19–23.<br />
Pryadko L. – Study of photorefractive effect in crystals<br />
Pb 5 Ge 3 O 11 :Cu and Pb 5 Ge 3 O 11 . – Gnatovsky O., Linnik V.; 4(3),<br />
199–201.<br />
R<br />
Rassamakin Yu.V. – See Evtukh A.A., Litovchenko V.G.,<br />
Oberemok A.S., Popov V.G., Romanyuk B.N., Volkov S.G.; 4(4),<br />
278–282.<br />
Rassamakin Yu.V. – See Litovchenko V.G., Efremov A.A., Evtukh<br />
A.A., Klyui M.I., Kostylov V.P.; 4(2), 82–84.<br />
Rebrova T.P. – See Goriletsky V.I., Mitichkin A.I., Belenko L.E.;<br />
4(2), 139–141.<br />
Repnytska O.P. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />
Shirshov Y.M., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />
202–206.<br />
Rodionov V.Ye. – See Lytvyn O.S., Khomchenko V.S., Kryshtab<br />
T.G., Lytvyn P.M., Mazin M.O., Prokopenko I.V., Tzyrkunov<br />
Yu.A.; 4(1), 19–23.<br />
Romanyuk A. – Low-temperature growth of diamond films using<br />
supersonic DC arcjet. – Güttler H., Popov V.; 4(3), 187–191.<br />
Romanyuk B.N. – See Avramenko S.F., Kiselev V.S., Valakh M.Ya.;<br />
4(4), 249–252.<br />
Romanyuk B.N. – See Evtukh A.A., Litovchenko V.G., Oberemok<br />
A.S., Popov V.G., Rassamakin Yu.V., Volkov S.G.; 4(4), 278–<br />
282.<br />
Romanyuk B.N. – See Rozhin A.G., Klyui N.I., Litovchenko V.G.,<br />
Melnik V.P., Piryatinskii Yu.P.; 4(1), 44–47.<br />
de Rossi D. – See Nesterenko B.O., Kazantseva Z.I., Stadnyk O.A.,<br />
Kalchenko V.I.; 4(1), 29–33.<br />
Rozhin A.G. – Activation of porous Si blue emission due to<br />
preanodization ion implantation. – Klyui N.I., Litovchenko<br />
V.G., Melnik V.P., Romanyuk B.N., Piryatinskii Yu.P.; 4(1),<br />
44–47.<br />
Rudenko O.V. – See Boltovets N.S., Voitsikhovskyi D.I., Konakova<br />
R.V., Milenin V.V., Makara V.A., Mel’nichenko M.M.; 4(4),<br />
318–322.<br />
Ruvinskii B.M. – See Freik D.M., Ruvinskii M.A., Galushchak<br />
M.A.; 4(1), 5–8.<br />
Ruvinskii M.A. – See Freik D.M., Ruvinskii B.M., Galushchak<br />
M.A.; 4(1), 5–8.<br />
© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />
S<br />
Savvin Yu.N. – See Bondar’ V.G., Gavrilyuk V.P., Konevskii V.S.,<br />
Krivonosov E.V., Martynov V.P.; 4(2), 131–133.<br />
Semchuk O.Yu. – Features of optical properties of ferromagnetic<br />
semiconductors with dynamic laser-induced gratings. –<br />
Veskliarskii R.Z., Kosharskii K.G.; 4(4), 337–342.<br />
Semchuk O.Yu. – Features of conduction electrons motion in the<br />
field of coherent light beams. – Willander M., Karlsteen M.;<br />
4(2), 106–110.<br />
Semikina T.V. – Optical and protective properties of different<br />
type diamond and diamond-like carbon films. – Shmyryeva A.N.;<br />
4(4), 312–317.<br />
Senchishin V.G. – OsadchenkoInfluence of plasticizer structure on<br />
stability of polystyrene scintillators optical characteristics. –<br />
Borisenko A.Yu., Titskaja V.D., Koba V.S., Lebedev V.N.,<br />
Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />
Serdega B.K. – Effect of surface condition on strain in semiconductor<br />
crystal sample. – Nikitenko E.V., Prikhodenko V.I.; 4(1),<br />
9–11.<br />
Serdega B.K. – See Vakulenko O.V., Kondratenko S.V.; 4(3), 159–<br />
162.<br />
Shekhovtsov L.V. – Some features of transverse photovoltage<br />
in semiconductor heterostructure and Schottky contact; 4(4),<br />
253–259.<br />
Shepeliavyi P.E.– See Chegel’ V.I., Shirshov Yu.M., Kostyukevich<br />
S.O., Chegel’ Yu.V.; 4(4), 301–306.<br />
Shepeliavyi P.E. – See Kostyukevych S.A., Moskalenko N.L.,<br />
Girnyk V.I., Tverdokhleb I.V., Ivanovsky A.A.; 4(1), 70–73.<br />
Shepelyavyi P.E. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />
S.I., Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A.,<br />
Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />
Shershykov V.M. – See Andryuschenko L.A., Goriletsky V.I.,<br />
Grinyov B.V., Gavrilyuk V.P., Zosim D.I., Skripkina V.T.; 4(2),<br />
126–130.<br />
Shirshov Yu.M. – See Berezhinsky L.I., Chegel’ V.I., Dovbeshko<br />
G.I., Melnichuk O.V.; 4(4), 343–346.<br />
Shirshov Yu.M. – See Chegel’ V.I., Kostyukevich S.O., Shepeliavy<br />
P.E., Chegel’ Yu.V.; 4(4), 301–306.
Shirshov Yu.M. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />
Repnytska O.P., Tryndiak V.P., Todor I.M., Zynio S.A.; 4(3),<br />
202–206.<br />
Shirshov Yu.M. – See Snopok B.A., Kostyukevich K.V., Lysenko<br />
S.I., Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A.,<br />
Shepelyavyj P.E., Kostyukevich S.A., Venger E.F.; 4(1), 56–<br />
69.<br />
Shmatko G.G. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />
R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko A.P.,<br />
Starchik M.I., Sugakov V.I.; 4(3), 152–155.<br />
Shmyryeva A.N. – See Semikina T.V.; 4(4), 312–317.<br />
Skripkina V.T. – See Andryuschenko L.A., Goriletsky V.I., Grinyov<br />
B.V., Gavrilyuk V.P., Zosim D.I., Shershykov V.M.; 4(2), 126–<br />
130.<br />
Slominskii Yu. – See Camorani P., Furier M., Kachkovskii O.,<br />
Piryatinskiy Yu., Nazarenko V.; 4(3), 229–238.<br />
Snopok B.A. – Venger Optical biosensors based on the surface<br />
plasmon resonance phenomenon: optimization of the metal<br />
layer parameters. – Kostyukevich K.V., Lysenko S.I., Lytvyn<br />
P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj<br />
P.E., Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1),<br />
56–69.<br />
Sobolev V.D. – See Karachevtseva L.A., Lytvynenko O.A.,<br />
Malovichko E.A., Stronska O.J.; 4(1), 40–43.<br />
Sobolev V.D. – See Karachevtseva L.A., Lytvynenko O.A.,<br />
Malovichko E.A., Stronska O.J.; 4(3), 177–181.<br />
Soininen E.L. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />
Z.L., Kopytko Yu.V., Veligura L.I., Törnqvist R.O., Vasama<br />
K.M.; 4(1), 48–55.<br />
Soloviev E.A. – See Boltovets N.S., Ivanov V.N., Konakova R.V.,<br />
Kurakin A.M., Milenin V.V., Verimeychenko G.M.; 4(2), 93–<br />
105.<br />
Soskin M. – See Anokhov S., Khizhnyak A., Lymarenko R.; 4(3),<br />
239–247.<br />
Stadnyk O.A. – See Nesterenko B.O., Kazantseva Z.I., de Rossi<br />
D., Kalchenko V.I.; 4(1), 29–33.<br />
Starchik M.I. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />
R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko A.P.,<br />
Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />
Strilchuk O.N. – See Litovchenko N.M., Prokhorovich A.V.;<br />
4(3), 168–170.<br />
Strilchuk O.N. – See Litovchenko N.M., Prokhorovich A.V.;<br />
4(3), 171–172.<br />
Stronska O.J. – See Karachevtseva L.A., Lytvynenko O.O.,<br />
Malovichko E.O., Busaneva E.V., Gorchinsky O.D.; 4(4), 347–<br />
351.<br />
Stronska O.J. – See Karachevtseva L.A., Lytvynenko O.A.,<br />
Malovichko E.A., Sobolev V.D.; 4(1), 40–43.<br />
Stronska O.J. – See Karachevtseva L.A., Lytvynenko O.A.,<br />
Malovichko E.A., Sobolev V.D.; 4(3), 177–181.<br />
Stronski A.V. – Fourier Raman spectroscopy studies of the<br />
As 40 S 60-x Se x glasses. – Vlèek M., Oleksenko P.F.; 4(3), 210–<br />
213.<br />
Stronski A.V. – Some peculiarities of the mechanism of irreversible<br />
photostructural transformations in thin As-S-Se layers; 4(2),<br />
111–117.<br />
Svechnikov S.V. – See Fedorenko L.L., Kiseleov V.S., Yusupov<br />
M.M., Beketov G.V.; 4(3), 192–195.<br />
Svetlichny A.M. – See Agueev O.A.; 4(4), 307–312.<br />
Sugakov V.I. – See Groza A.A., Venger E.F., Varnina V.I., Holiney<br />
R.Yu., Litovchenko P.G., Matveeva L.A., Litovchenko A.P.,<br />
Starchik M.I., Shmatko G.G.; 4(3), 152–155.<br />
Sugakov V.I. – See Litovchenko P.G., Wahl W., Groza A.A.,<br />
Dolgolenko A.P., Karpenko A.Ya., Khivrych V.I., Litovchenko<br />
O.P., Lastovetsky V.F., Dubovy V.K.; 4(2), 85–90.<br />
Sukhoivanov I.A. – See Lysak V.V., Petrov S.I.; 4(4), 389–390<br />
T<br />
Tagiyev T.B. – See Pashayev A.M., Gadjiyev A.R., Abbasova T.M.;<br />
4(4), 287–289.<br />
© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine<br />
Tartachnyk V. – See Kakazej M., Kudin A., Pinkovs’ka M.; 4(4),<br />
264–272.<br />
Tartachnyk V.P. – See Kudin A.P., Kuts V.I., Litovchenko P.G.,<br />
Pinkovska M.B.; 4(3), 156–159.<br />
Titskaja V.D. – See Senchishin V.G., Borisenko A.Yu., Koba V.S.,<br />
Lebedev V.N., Adadurov A.F., Osadchenko V.N.; 4(2), 123–125.<br />
Todor I.M. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />
Repnytska O.P., Shirshov Y.M., Tryndiak V.P., Zynio S.A.;<br />
4(3), 202–206.<br />
Tryndiak V.P. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />
Repnytska O.P., Shirshov Y.M., Todor I.M., Zynio S.A.; 4(3),<br />
202–206.<br />
Tverdokhleb I.V. – See Kostyukevych S.A., Moskalenko N.L.,<br />
Shepeliavyi P.E., Girnyk V.I., Ivanovsky A.A.; 4(1), 70–73.<br />
Tyagulski I.P. – See Lysenko V.S., Gomeniuk Y.V., Osiyuk I.N.;<br />
4(2), 75–81.<br />
Tzyrkunov Yu.A. – See Lytvyn O.S., Khomchenko V.S., Kryshtab<br />
T.G., Lytvyn P.M., Mazin M.O., Prokopenko I.V., Rodionov<br />
V.Ye.; 4(1), 19–23.<br />
Törnqvist R.O. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />
Z.L., Kopytko Yu.V., Veligura L.I., Soininen El., Vasama K.M.;<br />
4(1), 48–55.<br />
V<br />
Vakulenko O.V. – Spectral dependence of the photomagnetic<br />
effect in porous silicon. – Kondratenko S.V., Serdega B.K.; 4(3),<br />
159–162.<br />
Valakh M.Ya. – See Avramenko S.F., Kiselev V.S., Romanyuk B.N.;<br />
4(4), 249–252.<br />
Valakh M.Ya. – See Kunets V.P., Yukhymchuk V.O.; 4(3), 196–<br />
198.<br />
Varnina V.I. – See Groza A.A., Venger E.F., Holiney R.Yu.,<br />
Litovchenko P.G., Matveeva L.A., Litovchenko A.P., Starchik<br />
M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />
Vasama K.M. – See Vlasenko N.A., Kononets Ya.F., Denisova<br />
Z.L., Kopytko Yu.V., Veligura L.I., Soininen El., Törnqvist R.O.;<br />
4(1), 48–55.<br />
Vasetskii V.M. – Degenerate four-wave mixing in n-Ge due to<br />
intervalley redistribution of hot electrons. – Poroshin V.N.,<br />
Ignatenko V.A.; 4(4), 260–263.<br />
Veligura L.I. – See Vlasenko N.A., Kononets Ya.F., Denisova Z.L.,<br />
Kopytko Yu.V., Soininen El., Törnqvist R.O., Vasama K.M.;<br />
4(1), 48–55.<br />
Venger E.F. – See Baranskii P.I., Babich V.M.; 4(1), 1–4.<br />
Venger E.F. – See Groza A.A., Varnina V.I., Holiney R.Yu.,<br />
Litovchenko P.G., Matveeva L.A., Litovchenko A.P., Starchik<br />
M.I., Sugakov V.I., Shmatko G.G.; 4(3), 152–155.<br />
Venger E.F. – See Kirillova S.I., Primachenko V.E., Chernobai<br />
V.A.; 4(1), 12–18.<br />
Venger E.F. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />
Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj<br />
P.E., Kostyukevich S.A., Shirshov Yu.M.; 4(1), 56–69.<br />
Verimeychenko G.M. – See Boltovets N.S., Ivanov V.N.,<br />
Konakova R.V., Kurakin A.M., Milenin V.V., Soloviev E.A.;<br />
4(2), 93–105.<br />
Veskliarskii R.Z. – See Semchuk O.Yu., Kosharskii K.G.; 4(4),<br />
337–342.<br />
Vlasenko N.A. – Aging of ZnS:Mn thin-film electroluminescent<br />
devices grown by two different atomic-layer epitaxial processes.<br />
– Kononets Ya.F., Denisova Z.L., Kopytko Yu.V., Veligura<br />
L.I., Soininen El., Törnqvist R.O., Vasama K.M.; 4(1), 48–55.<br />
Vlèek M. – See Stronski A.V., Oleksenko P.F.; 4(3), 210–213.<br />
Voitsikhovskyi D.I. – See Boltovets N.S., Konakova R.V., Milenin<br />
V.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.; 4(4),<br />
318–322.<br />
Voitsikhovskyi D.I. – See Konakova R.V., Milenin V.V., Kamalov<br />
A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn O.S., Matveeva<br />
L.A., Prokopenko I.V.; 4(4), 298–300.<br />
Volkov S.G. – See Evtukh A.A., Litovchenko V.G., Oberemok<br />
A.S., Popov V.G., Rassamakin Yu.V., Romanyuk B.N.; 4(4),<br />
278–282.<br />
399
W<br />
Wahl W. – See Litovchenko P.G., Groza A.A., Dolgolenko A.P.,<br />
Karpenko A.Ya., Khivrych V.I., Litovchenko O.P., Lastovetsky<br />
V.F., Sugakov V.I., Dubovy V.K.; 4(2), 85–90.<br />
Willander M. – See Semchuk O.Yu., Karlsteen M.; 4(2), 106–110.<br />
Y<br />
Yakovyna V.S. – The impact of laser shock waves on anodic<br />
oxide – compound semiconductor interface. – Berchenko N.N.,<br />
Nikiforov Yu.N.; 4(4), 283–286.<br />
Yanchuk Z.Z. – See Gubanov O.V., Kulakovs’kij V.D., Poveda<br />
R.A.; 4(3), 207–209.<br />
Yanchuk Z.Z. – See Gubanov V.O., Kulakovs’kij V.D., Poveda<br />
R.A.; 4(4), 391–393.<br />
Yaremyk R.Y. – See Bilyi O.I., Kiselyov Y.M., Novikov V.P.; 4(3),<br />
224–229.<br />
Yukhymchuk V.O. – See Kunets V.P., Valakh M.Ya.; 4(3), 196–<br />
198.<br />
Yusupov M.M. – See Fedorenko L.L., Kiseleov V.S., Svechnikov<br />
S.V., Beketov G.V.; 4(3), 192–195.<br />
Z<br />
Zagoruiko Yu.A. – See Fedorov A.G., Fedorenko O.A., Kovalenko<br />
N.O., 4(2), 118–122.<br />
Zakirov R.M. – See Baschenko S.M., Gochelashvili K.S., Klimov<br />
V.I., Mikhkelsoo V.T., Prokhorov O.M.; 4(4), 290–297.<br />
Zosim D.I. – See Andryuschenko L.A., Goriletsky V.I., Grinyov<br />
B.V., Gavrilyuk V.P., Skripkina V.T., Shershykov V.M.; 4(2),<br />
126–130.<br />
Zynyo S.A. – See Snopok B.A., Kostyukevich K.V., Lysenko S.I.,<br />
Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Shepelyavyj P.E.,<br />
Kostyukevich S.A., Shirshov Yu.M., Venger E.F.; 4(1), 56–69.<br />
Zynio S.A. – See Dovbeshko G.I., Chegel V.I., Gridina N.Y.,<br />
Repnytska O.P., Shirshov Y.M., Tryndiak V.P., Todor I.M.;<br />
4(3), 202–206.<br />
400<br />
© 2001, Institute of <strong>Semiconductor</strong> <strong>Physics</strong>, National Academy of Sciences of Ukraine